Planar magnetization spin orbit magnetic component

Abstract

A planar spin-orbit magnetic component is provided. The planar spin-orbit magnetic component includes a heavy metal layer, an anti-ferromagnetic layer, and a magnetic tunnel junction. The anti-ferromagnetic layer is disposed on the heavy metal layer, and the magnetic tunnel junction is disposed on the anti-ferromagnetic layer. The magnetic tunnel junction includes a free layer, a barrier layer, and a fixed layer. The barrier layer is disposed on the free layer, and the fixed layer is disposed on the barrier layer. A film surface shape of the free layer is a rounded rectangle.

Description

Technical Field

[0001] This invention relates to a planar magnetized spin-orbit magnetic component. Background Technology

[0002] Magnetic Random Access Memory (MRAM) boasts advantages such as high speed, low power consumption, high density, non-volatility, and virtually unlimited read / write cycles, making it predicted to be the mainstream next-generation memory. The main structure of storage elements in MRAM consists of a stacked structure composed of a pinned layer of ferromagnetic / non-magnetic metal / ferromagnetic materials, a tunneling barrier layer, and a free layer of magnetic material. This stacked structure is known as a Magnetic Tunnel Junction (MTJ) assembly. Since write current only passes through selected MRAM assemblies, and magnetization reversal depends on the strength of the write current and the external magnetic field, miniaturizing MRAM assemblies can actually reduce write current, theoretically solving the problems of improving write selectivity and reducing write current simultaneously.

[0003] Magnetic tunneling junction (MTJ) modules that utilize the spin-orbit-torque (SOT) mechanism for reading and writing can be categorized into in-plane MTJ modules and perpendicular MTJ modules. Employing the spin-orbit-torque mechanism in magnetic memory structures can significantly improve operating speed and write reliability. The SOT flipping mechanism in an in-plane MTJ module involves passing a write current through a heavy metal layer formed of ferromagnetic material. The heavy metal layer generates a spin transfer torque (STT) due to the spin Hall effect and an external magnetic field. Furthermore, the write current generates a Rashba torque (RT) after passing through the perpendicular electric field and external magnetic field at the material interface. Since both STT and RT torques are perpendicular to the direction of the write current and parallel to the film surface, these two torques are summed to form the SOT. Therefore, if a magnetic field is applied to the ferromagnetic material on the film surface perpendicular to the magnetic moment, a SOT can be generated, causing the magnetic moment of the ferromagnetic layer to flip, thus achieving the purpose of writing to the memory element. Summary of the Invention

[0004] This invention provides a planar spin-orbit magnetic assembly. This planar spin-orbit magnetic assembly includes a heavy metal layer, an antiferromagnetic layer, and a magnetic tunneling interface. The antiferromagnetic layer is disposed on the heavy metal layer, and the magnetic tunneling interface is disposed on the antiferromagnetic layer. The magnetic tunneling interface includes a free layer, a barrier layer, and a fixed layer. The barrier layer is disposed on the free layer. The fixed layer is disposed on the barrier layer. The free layer has a rounded rectangular shape.

[0005] This invention provides a planar spin-orbit magnetic assembly. This planar spin-orbit magnetic assembly includes a heavy metal layer, an antiferromagnetic layer, a magnetic tunneling interface, a first through-hole, a second through-hole, a first lower electrode, and a second lower electrode. The antiferromagnetic layer is disposed on the heavy metal layer, and the magnetic tunneling interface is disposed on the antiferromagnetic layer. The first and second through-holes are disposed below the heavy metal layer. The first lower electrode is coupled to the heavy metal layer via the first through-hole, and the second lower electrode is coupled to the heavy metal layer via the second through-hole. The magnetic tunneling interface includes a free layer, a barrier layer, and a fixed layer. The barrier layer is disposed on the free layer. The fixed layer is disposed on the barrier layer. The fixed layer has an elliptical shape. The line connecting the first and second through holes on the film surface plane forms a first angle with the minor axis of the ellipse in the shape of the fixed layer film surface, wherein the first angle is not zero degrees. Alternatively, the long side of the free layer forms a second angle with the major axis of the ellipse in the shape of the fixed layer film surface, and this second angle is not a right angle. Attached Figure Description

[0006] Figure 1 This is a schematic diagram of a planar magnetized spin-orbit magnetic component.

[0007] Figure 2 This is a schematic diagram of the planar magnetized spin-orbit magnetic component in the first embodiment of the present invention.

[0008] Figure 3 This is a schematic diagram showing the relationship between the thickness of the antiferromagnetic layer and thermal stability in the first embodiment of the present invention.

[0009] Figure 4 This is a schematic diagram of the planar magnetized spin-orbit magnetic component in the second embodiment of the present invention.

[0010] Figure 5 This is a top view of the planar magnetized spin-orbit magnetic component in a second embodiment of the present invention.

[0011] Figure 6 This is a schematic diagram showing the influence of rounded rectangles on magnetic moment in the second embodiment of the present invention.

[0012] Figure 7 This is a top view of the planar magnetized spin-orbit magnetic component in the second embodiment of the present invention.

[0013] Figure 8 This is a top view of the planar magnetized spin-orbit magnetic assembly in the second and third embodiments of the present invention.

[0014] Figure 9 This is a schematic diagram of the planar magnetized spin-orbit magnetic component in the third embodiment of the present invention.

[0015] Figure 10 This is a top view of the planar magnetized spin-orbit magnetic component in a third embodiment of the present invention.

[0016] Figure 11 This is a top view of the planar magnetized spin-orbit magnetic component in the third and second embodiments of the present invention.

[0017] Figure 12 This is a schematic diagram showing the relationship between the angle between the line connecting the through holes on the film surface and the minor axis of the ellipse in the third and second embodiments of the present invention and the switching current density.

[0018] Figure 13 This is a top view of the planar magnetized spin-orbit magnetic component in the third and second embodiments of the present invention.

[0019] Figure 14 This is a schematic diagram showing the relationship between the angle between the line connecting the through holes on the film surface and the minor axis direction of the ellipse in the third embodiment of the present invention and the switching current density.

[0020] Explanation of reference numerals in the attached figures:

[0021] 100, 200, 400, 400-1, 400-2, 900, 900-1, 900-2: Planar magnetized spin-orbit magnetic components;

[0022] 110: Heavy metal layer;

[0023] 120: Magnetic tunneling interface;

[0024] 121: Overlay;

[0025] 122: Fixed layer;

[0026] 123: Barrier layer;

[0027] 124: Free layer;

[0028] 140: Upper electrode;

[0029] 230: Antiferromagnetic layer;

[0030] 340: First through hole;

[0031] 341: Second through hole;

[0032] 350: First lower electrode;

[0033] 351: Second lower electrode;

[0034] AG1, AG2, AG3: Membrane surface shape;

[0035] A1, A2, A3: Membrane surface area;

[0036] L1, L2: line segments;

[0037] S, s / 2, Δw / 2: Distance;

[0038] M free : Magnetic moment vector of the free layer;

[0039] H EB,AFM : The exchange field vector of the antiferromagnetic layer;

[0040] M pin : Magnetic moment vector of the fixed layer;

[0041] EL: Input current;

[0042] T SOT Magnetic moment;

[0043] t AFM : Thickness of the antiferromagnetic layer;

[0044] TSB: Thermal stability;

[0045] L, L+s: The lengths of the rounded rectangle;

[0046] W, W+Δw: Width of the rounded rectangle;

[0047] r: fillet radius;

[0048] L5v00, L5v01, L5v03, L5vE: Curves;

[0049] X: X-axis;

[0050] Y: Y-axis;

[0051] Z: Z-axis;

[0052] Ф, θ: included angle Detailed Implementation

[0053] Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same element symbols are used in the drawings and description to denote the same or similar parts.

[0054] This embodiment adds an antiferromagnetic layer between the heavy metal layer and the magnetic tunneling interface, thereby increasing the thermal stability of the free layer in the magnetic component during flipping. The shape of the free layer film is designed as a rounded rectangle, and the radius parameter of the rounded corners affects the flipping characteristics of the magnetic moment, making the magnetic moment of the free layer more easily affected by the spin-orbit torque and thus adjusted. The placement angle of the via and the fixed layer is adjusted so that the switching current and the minor axis of the ellipse of the fixed layer film shape have a preset angle, thereby reducing the switching current density required to flip the aforementioned component. The above methods can all be applied to planar magnetized spin-orbit magnetic components, so that the free layer has thermal stability, and the magnetic moment of the free layer will be more easily affected by the spin-orbit torque induced by the current in the heavy metal layer, thus reducing the write current level in the heavy metal layer. The details of each embodiment are described below. Users of this embodiment can adjust the material and thickness of each layer according to their needs, thereby realizing the function of each layer. The disclosure of the following embodiments is one or more examples.

[0055] For ease of explanation, coordinate axes X, Y, and Z are set in the drawings of various embodiments of the present invention to facilitate subsequent description. Figure 1 This is a schematic diagram of a planar magnetized spin-orbit magnetic component in this embodiment. The planar magnetized spin-orbit magnetic component 100 mainly includes a heavy metal layer 110, a magnetic tunneling interface 120, and an upper electrode 140. The magnetic tunneling interface 120 is disposed on the heavy metal layer 110. The magnetic tunneling interface 120 is disposed between the heavy metal layer 110 and the upper electrode 140.

[0056] The heavy metal layer 110 can also be referred to as the write line. The heavy metal layer 110 receives the input current EL through the electrode contacts and generates a spin current, causing the magnetic tunneling junction 120 to undergo magnetization reversal. In this embodiment, the material of the heavy metal layer 110 can be tantalum (Ta), platinum (Pt), tungsten (W), or an alloy of these three. The thickness of the heavy metal layer 110 can be... Up to 200 angstroms.

[0057] The upper electrode 140, also known as the bit line, is used to read data stored in the magnetic tunneling interface 120 of the planar magnetized spin-orbit magnetic assembly 100. The upper electrode 120 is made of a conductive material, such as copper (Cu), aluminum (Al), tantalum (Ta), or an alloy of combinations of the above elements.

[0058] The magnetic tunneling interface 120 mainly includes a capping layer 121, a pinned layer 122, a barrier layer 123, and a free layer 124. The free layer 124 is disposed on the heavy metal layer 110. The barrier layer 123 is disposed on the free layer 124. The pinned layer 122 is disposed on the barrier layer 123. The capping layer 121 is made of an etchable material, such as tantalum (Ta).

[0059] The fixing layer 122 is made of a ferromagnetic material with planar magnetic moments, and the magnetic moment vectors of the fixing layer 122 are arranged parallel to the film surface. The material of the fixing layer 122 includes iron (Fe), cobalt (Co), nickel (Ni), gadolinium (Gd), terbium (Tb), dysprosium (Dy), boron (B), or an alloy of these seven elements. Specifically, the fixing layer 122 is, for example, a ferromagnetic / non-magnetic metal / ferromagnetic material stack composed of a lower fixing layer, a coupling layer, and an upper fixing layer. The upper and lower fixing layers can be single-layer or composite multilayer structures. A single-layer upper or lower fixing layer can be made of ferromagnetic materials such as iron (Fe), cobalt (Co), nickel (Ni), or alloys of these elements. A multilayer composite upper or lower fixing layer can be a composite layer structure of ferromagnetic and metallic materials, such as a composite layer structure composed of elements like cobalt (Co) / platinum (Pt), cobalt (Co) / nickel (Ni), or cobalt (Co) / palladium (Pd).

[0060] The free layer 124 is the memory layer in the planar magnetized spin-orbit magnetic component 100. The heavy metal layer 110 receives an input current EL from the electrode contacts of the planar magnetized spin-orbit magnetic component 100. This input current EL flows through the heavy metal layer 110, generating multiple spin currents with different directions due to the spin Hall effect (SHE). This, in turn, produces a resultant torque with the applied magnetic field, causing the magnetic moment of the free layer 124 to flip, thereby achieving the purpose of data reading and writing. The material of the free layer 124 is a ferromagnetic material with horizontal anisotropy. The ferromagnetic material of the free layer 124 can be iron (Fe), cobalt (Co), nickel (Ni), gadolinium (Gd), terbium (Tb), dysprosium (Dy), boron (B), or alloys of these elements, such as CoFeB, NF, FeB, etc. The thickness of the free layer 124 can be from 10 angstroms to 100 angstroms. The free layer 124 can be a single-layer structure or a multi-layer composite structure. If the free layer is a composite structure formed by multiple layers of ferromagnetic materials, then the materials of these multiple layers can be composite layer structures composed of elements such as cobalt (Co) / platinum (Pt), cobalt (Co) / nickel (Ni), cobalt (Co) / palladium (Pd), etc.

[0061] A capping layer 121 is disposed between the upper electrode 140 and the fixed layer 122. A barrier layer 123 is disposed between the free layer 124 and the fixed layer 122. The barrier layer 123 may have a predetermined thickness obtained experimentally, thereby effectively isolating the spin current transmission of the metal or ferromagnetic materials in the upper and lower layers, allowing the operating mechanisms of each layer to be simple and not interfere with each other. In this embodiment, the barrier layer 123 may be an insulating material with magnetic tunneling capabilities at a specific thickness. These insulating materials may be magnesium oxide, aluminum oxide, or a combination of both.

[0062] Figure 2 This is a schematic diagram of the planar magnetized spin-orbit magnetic component 200 in the first embodiment of the present invention. Figure 2 and Figure 1 The same components have the same labels and the same functions. Figure 2 and Figure 1 The difference lies in the addition of an antiferromagnetic layer 230 between the heavy metal layer 110 and the magnetic tunneling interface 120. In other words, Figure 2 An antiferromagnetic layer 230 is disposed on the heavy metal layer 110, and a magnetic tunneling interface 120 is disposed on the antiferromagnetic layer 230. The material of the antiferromagnetic layer 230 can be iridium manganese (IrMn), iron manganese (FeMn), platinum manganese (PtMn), nickel manganese (NiMn), or other metals or alloys with antiferromagnetic properties. The thickness of the antiferromagnetic layer can be from 1 angstrom to 50 angstroms.

[0063] Therefore, measurements show that placing the antiferromagnetic layer 230 below the free layer 124 in the magnetic tunneling interface 120 significantly improves the thermal stability of the free layer 124 during flipping. Figure 3 The thickness t of the antiferromagnetic layer in the first embodiment of the present invention AFM A diagram illustrating the relationship between thermal stability (TSB) and switching efficiency. Thermal stability (TSB), also known as switching efficiency, is calculated based on "Δ (thermal stability factor) / EL (input current)," which represents the thermal stability factor per unit of switching current. Specifically, the equation for calculating the thermal stability factor Δ is Δ = K... eff ×V / K B T. Parameter K eff It is used to represent anisotropic energy density, therefore the unit is energy. Parameter V is in volume. Parameter K B Let T be the Boltzmann constant. The parameter T is the temperature. Therefore, due to the aforementioned equation used to represent the thermal stability coefficient Δ, the molecule (K0)... eff ×V) and denominator (K) B T) are all in units of energy, therefore the thermal stability coefficient Δ is dimensionless.

[0064] Depend on Figure 3 It can be seen that when the thickness of the antiferromagnetic layer is t AFM The thicker the layer, the higher the thermal stability TSB value, resulting in a significant improvement in the thermal stability of the free layer 124 after inversion. On the other hand, Figure 2 The shape of the medium heavy metal layer 110 may differ from that of the free layer 124, as will be described in detail in other embodiments below.

[0065] Figure 4 This is a schematic diagram of the planar magnetized spin-orbit magnetic component 400 in the second embodiment of the present invention. Figure 4 The same components as those in the previous embodiments have the same labels and the same functions. Figure 4 and Figure 2 The difference between them is that, Figure 4 The surface shape of free layer 124 is designed as a rounded rectangle, with the radius of the rounded corners influencing the magnetic moment reversal characteristics, making the magnetic moment of free layer 124 more easily adjusted by the spin-orbit torque. Specifically, in Figure 4 In the second embodiment, the barrier layer 123 of the magnetic tunneling interface 120 has the same film surface area A1 as the free layer 124, the antiferromagnetic layer 230, and the heavy metal layer 110, and the barrier layer 123, the free layer 124, the antiferromagnetic layer 230, and the heavy metal layer 110 have the same film surface shape AG1. Figure 5 , Figure 7 , Figure 8 The magnetic tunneling interface 120 has a cover layer 121 and a fixing layer 122 with the same membrane surface area A2, and the cover layer 121 and the fixing layer 122 have the same membrane surface shape AG2. Figure 5 (The membrane is elliptical in shape). The surface area A2 of the elliptical membrane is smaller than the surface area A1 of the rounded rectangle.

[0066] The arrangement of the two through holes 340 and 341 with the fixed layer 122 and the free layer 124 in the XY plane will also present different technical solutions, but cannot be achieved through... Figure 4 The structural cross-sectional diagram is presented, therefore it will be presented through... Figure 5 , Figure 7 and Figure 8 The top view of the structure is presented.

[0067] Figure 5 This is a top view of the planar magnetized spin-orbit magnetic component 400-1 in the second embodiment of the present invention. Figure 4 The film surface shape AG1 corresponding to the middle barrier layer 123, free layer 124, antiferromagnetic layer 230 and heavy metal layer 110 is in Figure 5 It is a rounded rectangle. Figure 4The membrane surface shape AG2 corresponding to the middle cover layer 121 and the fixed layer 122 is in Figure 5 It is elliptical. The length and width of the rounded rectangle are represented by L and W, respectively. Line segment L1 represents the midline of the membrane shape AG1 along its length, and line segment L2 represents the midline of the membrane shape AG1 along its width. From Figure 5 It can be seen that the membrane shape AG2 is located at the center of the membrane shape AG1, and the center points of the first through hole 340, the membrane shape AG2 and the second through hole 341 all pass through the line segment L1.

[0068] When the input current EL flows from left to right through the heavy metal layer with a film-like shape AG1, a magnetic moment T will be generated. SOT At this time, Figure 4 The magnetic moment vector of free layer 124 is M free Presentation; Figure 4 The exchange field vector of the antiferromagnetic layer 230 is H EB,AFM Presentation; Figure 4 The magnetic moment vector of fixed layer 122 is M pin Presented. Figure 4 The magnetic moment vectors of the free layer 124 and the fixed layer 122 will be determined according to the direction of the major axis in the shape (ellipse) of the fixed layer 122's surface, and Figure 4 The magnetic moment vectors of the free layer 124 are arranged parallel to the film surface.

[0069] Figure 6 This is a schematic diagram showing the influence of rounded rectangles on magnetic moment in the second embodiment of the present invention. Figure 6 Part A is presented Figure 4 Free layer 124 in Figure 5 The presented mold shape AG1 (i.e., a rounded rectangle) and the flow direction of the input current EL are described. The mold shape AG1 (rounded rectangle) presents not only its length L (400 nm in this embodiment as an example) and width W (200 nm in this embodiment as an example), but also the radius r of the rounded corners. Furthermore, a parameter v is set, which is the quotient of the width W of the rounded rectangle divided by the radius r of the rounded corners. Figure 6 Part (B) shows that, under different parameters v, the magnetic moment component my in the Y direction in the free layer requires a corresponding amount of time to flip. The aforementioned magnetic moment component my is derived from the magnetic moment vector M. free The component M in the Y direction free,y Divided by magnetic moment vector M free And obtain (i.e., m) y =M free,y / M free ).

[0070] Figure 6In section (B), curve L5v00 represents the case where parameter v is zero (v = 0), meaning the free layer's membrane surface shape is a right-angled rectangle. Curve L5v01 represents the case where parameter v is 0.1 (v = 0.1). Curve L5v03 represents the case where parameter v is 0.3 (v = 0.3). Curve L5vE represents the case where the free layer's membrane surface shape is directly elliptical. From... Figure 6 It can be seen that the magnetic moment vector of the free layer ( Figure 5 Marked as M free The time required for magnetic moment reversal is longest for curve L5v00, followed by curve L5v01, while curve L5v03 has the shortest time required for magnetic moment reversal. Curve L5vE, however, may require the longest time for magnetic moment reversal in the free layer. Therefore, via... Figure 6 The experimental results show that the radius r of the fillet of the mold surface shape AG1 (i.e., a rounded rectangle) affects the magnetic moment reversal characteristics of the free layer. In this embodiment, when the parameter v is 0.1 or 0.3 (i.e., r = 0.1W or r = 0.3W), it has better magnetic moment reversal characteristics compared to a free layer film surface shape of a right-angled rectangle.

[0071] Figure 7 This is a top view of the planar magnetized spin-orbit magnetic component 400-2 in the second embodiment of the present invention. Figure 7 and Figure 4 The difference lies in the fact that it is designed for movement. Figure 7 The center points of the first through-hole 340 and the second through-hole 341 are set such that they differ from line segment L1 by a distance s, such that the line connecting the first through-hole 340 and the second through-hole 341 on the film surface plane (i.e., the XY plane) has a preset angle Ф with the minor axis direction of the ellipse in the fixed layer film surface shape AG2, and this angle Ф is not zero degrees. Because the positions of the first through-hole 340 and the second through-hole 341 are adjusted, the flow direction of the input current EL and the magnetic moment T are also adjusted. SOT The direction is adjusted accordingly. Experiments have shown that when the aforementioned included angle Ф is present (this included angle Ф is approximately ±50 degrees), the switching current density required to flip the planar magnetized spin-orbit magnetic component 400-2 can be reduced.

[0072] Figure 8 This is a top view of the planar magnetized spin-orbit magnetic component 400-3 in the second and third embodiments of the present invention. Figure 8 and Figure 4The difference lies in the fact that the major axis of the ellipse in the fixed layer film shape AG2 is rotated so that the line connecting the first through-hole 340 and the second through-hole 341 on the film plane (i.e., the XY plane) has a preset angle θ with the minor axis of the ellipse in the fixed layer film shape AG2, and this angle θ is not zero degrees. Because the major axis of the film shape AG2 (ellipse) is adjusted, the magnetic moment vector M of the fixed layer 122... pin and the exchange field vector H of the antiferromagnetic layer 230 EB,AFM The direction is adjusted accordingly. Experiments have shown that when the aforementioned included angle θ is present (this included angle θ is approximately ±50 degrees), the switching current density required to flip the planar magnetized spin-orbit magnetic component 400-3 can be reduced.

[0073] Figure 5 In the second embodiment, the planar magnetized spin-orbit magnetic component 400-1 has an antiferromagnetic layer between the heavy metal layer and the magnetic tunneling interface, thereby increasing the thermal stability of the free layer in the magnetic component after flipping; the film shape of the free layer is designed as a rounded rectangle, so as to influence the flipping characteristics of the magnetic moment through the radius parameter of the rounded corners. Furthermore, Figure 7 Second embodiment and Figure 8 In the second and third embodiments, the planar magnetized spin-orbit magnetic components 400-2 and 400-3, in addition to having Figure 5 In addition to the structure of the second embodiment, the position of the through hole or the placement angle of the fixing layer are adjusted so that the switching current has a preset angle with the minor axis of the ellipse of the fixing layer film surface shape, so as to reduce the switching current density that requires the aforementioned components to be flipped.

[0074] In some embodiments, the switching current density requiring the aforementioned components to be flipped can be reduced simply by adjusting the position of the vias or the placement angle of the fixed layer, without needing to adjust the shape of the free layer. For example, users of this embodiment can adjust the free layer according to their needs. Figure 7 Second embodiment and Figure 8 In the second and third embodiments, the shape of the free layer membrane surface is changed from the rounded rectangle design described in this embodiment to the original right-angled rectangle. An antiferromagnetic layer is added, and the position of the through hole or the placement angle of the fixed layer are adjusted to obtain the aforementioned preset included angle, thereby reducing the switching current density that requires flipping the aforementioned components.

[0075] Figure 9 This is a schematic diagram of the planar magnetized spin-orbit magnetic component 900 in the third embodiment of the present invention. Figure 4 The difference lies in, Figure 9In the third embodiment, the barrier layer 123, the free layer 124, and the antiferromagnetic layer 230 of the magnetic tunneling interface 120 have the same film surface area A1, and the barrier layer 123, the free layer 124, and the antiferromagnetic layer 230 have the same film surface shape AG1. Figure 10 , Figure 11 , Figure 13 The magnetic tunneling interface 120 has a cover layer 121 and a fixing layer 122 with the same membrane surface area A2, and the cover layer 121 and the fixing layer 122 have the same membrane surface shape AG2. Figure 10 , Figure 11 , Figure 13 The elliptical membrane surface area A2 is smaller than the rounded rectangular membrane surface area A1. The heavy metal layer 110 has a membrane surface area A3, and the heavy metal layer 110 has a membrane surface shape AG3. Figure 10 , Figure 11 , Figure 13 (It is presented as a right-angled rectangle). Therefore, by placing the antiferromagnetic layer 230 below the free layer 124 in the magnetic tunneling interface 120, the thermal stability of the free layer 124 flipping is significantly improved.

[0076] The arrangement of the two through holes 340 and 341 with the fixed layer 122 and the free layer 124 in the XY plane will also present different technical solutions, but cannot be achieved through... Figure 9 The structural cross-sectional diagram is presented, therefore it will be presented through... Figure 10 , Figure 11 and Figure 13 The top view of the structure is presented.

[0077] Figure 10 This is a top view of the planar magnetized spin-orbit magnetic component 900-1 in the third embodiment of the present invention. Please also refer to... Figure 9 and Figure 10 , Figure 9 The film surface shape AG1 corresponding to the intermediate barrier layer 123, free layer 124 and antiferromagnetic layer 230 is in Figure 10 It is a rounded rectangle. Figure 9 The membrane surface shape AG2 corresponding to the middle cover layer 121 and the fixed layer 122 is in Figure 10 It is oval in shape. Figure 9 The film surface shape AG3 corresponding to the medium and heavy metal layer 110 is in Figure 10 It is a right-angled rectangle. The difference between the minor axis length of the membrane shape AG2 (ellipse) and the width of the membrane shape AG1 (rounded rectangle) is a distance s, therefore Figure 10The minor axis of the membrane shape AG2 (ellipse) is marked with two distances "s / 2" to the two boundaries of the membrane shape AG1 (rounded rectangle). The length and width of the right-angled rectangle are represented by "L+s" and W, respectively. Line segment L1 represents the midline of membrane shape AG1 along its length, and line segment L2 represents the midline of membrane shape AG1 along its width. From Figure 10 It can be seen that the membrane shape AG2 is located at the center of the membrane shapes AG1 and AG3, and the center points of the first through hole 340, membrane shapes AQG1, AG2, AG3 and the second through hole 341 all pass through the line segment L1.

[0078] When the input current EL flows from left to right through the heavy metal layer with a film-like shape AG1, a magnetic moment T will be generated. SOT At this time, Figure 9 The magnetic moment vector of free layer 124 is M free Presentation; Figure 9 The exchange field vector of the antiferromagnetic layer 230 is H EB,AFM Presentation; Figure 9 The magnetic moment vector of fixed layer 122 is M pin Presented. Figure 9 The magnetic moment vector of free layer 124 is determined according to the direction of the long side in the shape of the free layer 124 mold surface (rounded rectangle). Figure 9 The magnetic moment vector of the fixed layer 122 will be determined according to the direction of the major axis in the shape (ellipse) of the fixed layer 122 mold surface, and Figure 9 The magnetic moment vectors of the free layer 124 are arranged parallel to the film surface.

[0079] Figure 11 This is a top view of the planar magnetized spin-orbit magnetic component 900-2 in the third and second embodiments of the present invention. Figure 11 and Figure 10 The difference lies in the fact that it is designed for movement. Figure 10 The center point of the first through hole 340 and the second through hole 341 is set such that the distance between them and line segment L1 is "Δw / 2", so that the line connecting the first through hole 340 and the second through hole 341 on the film surface plane (i.e., the XY plane) has a preset angle Ф with the minor axis direction of the ellipse in the shape AG2 of the fixed layer film surface, and this angle Ф is not zero degrees. Figure 11 The length and width of the right-angled rectangle (film shape AG3) are represented by "L+s" and "W+Δw" respectively. Due to the adjustment of the positions of the first through-hole 340 and the second through-hole 341, the flow direction of the input current EL and the magnetic moment T are thus affected. SOT The direction is adjusted accordingly. Experiments have shown that when the aforementioned included angle Ф is present (this included angle Ф is approximately ±50 degrees), the switching current density required to flip the planar magnetized spin-orbit magnetic component 900-2 can be reduced.

[0080] Figure 12 This is a schematic diagram illustrating the relationship between the angle between the line connecting the through-holes on the membrane plane and the minor axis of the ellipse in the third and second embodiments of the present invention, and the corresponding switching current density. In this embodiment, the switching current density is defined as the quotient of the switching current J_C(Φ) at a specific angle Φ divided by the switching current J_C(0°) at an angle of zero degrees. Figure 12 As shown, when the preset angle Ф is in the range of -45 degrees to -21 degrees (BL1) and the range of 1 degree to 45 degrees (BL2), the switching current density is lower than the switching current density when the default angle Ф is zero degrees. In other words, when the preset angle Ф is in the ranges BL1 and BL2, the switching current density that can flip the aforementioned components will be reduced.

[0081] Figure 13 This is a top view of the planar magnetized spin-orbit magnetic component 900-3 in the second and third embodiments of the present invention. Figure 13 and Figure 11 The difference lies in the design where the major axis of the rounded rectangle in the fixed layer membrane shape AG1 is rotated, so that the major side of the free layer membrane shape AG1 (as shown by line segment L3) forms an angle θ with the major axis of the ellipse in the fixed layer membrane shape AG2 (as shown by line segment L2), and this angle θ is not zero. Because the major axis of the membrane shape AG1 (rounded rectangle) has been adjusted, the free layer magnetic moment vector M... free The direction is adjusted accordingly. Experiments have shown that when the aforementioned included angle θ is present (this included angle θ is approximately ±50 degrees), the switching current density required to flip the planar magnetized spin-orbit magnetic component 900-3 can be reduced.

[0082] Figure 14 This is a schematic diagram showing the relationship between the angle θ between the long side direction of the free layer and the major axis direction of the ellipse in the third embodiment of the present invention and the switching current density. Figure 14 and Figure 12 The switching current density mentioned above has the same meaning. For example... Figure 14 As shown, when the preset angle θ is in the range of -45 degrees to -1 degree (BL1) and the range of 1 degree to 45 degrees (BL2), the switching current density is lower than the switching current density when the default angle θ is zero degrees. In other words, when the preset angle θ is in the ranges BL1 and BL2, the switching current density that can flip the aforementioned components will be reduced.

[0083] Figure 10In the third embodiment, the planar magnetized spin-orbit magnetic component 900-1 has an antiferromagnetic layer between the heavy metal layer and the magnetic tunneling interface, thereby increasing the thermal stability of the free layer in the magnetic component after flipping; the film shape AG1 of the free layer is designed as a rounded rectangle, so as to influence the flipping characteristics of the magnetic moment through the radius parameter of the rounded corners. Furthermore, Figure 11 The third and second embodiments and Figure 13 In the third embodiment, the planar magnetized spin-orbit magnetic components 900-2 and 900-3, in addition to having Figure 10 In addition to the structure of the third embodiment, the position of the through-hole or the placement angle of the free layer are adjusted so that the switching current has a preset angle (first angle) with the minor axis of the ellipse in the shape of the fixed layer film. Alternatively, the long side of the free layer is adjusted to have a second angle with the major axis of the ellipse in the shape of the fixed layer film so that it is not a right angle, thereby reducing the switching current density that requires flipping the aforementioned components.

[0084] In some embodiments, the switching current density requiring the aforementioned components to be flipped can be reduced simply by adjusting the position of the vias or the placement angle of the fixed layer, without needing to adjust the shape of the free layer. For example, users of this embodiment can adjust the free layer according to their needs. Figure 11 The third and second embodiments and Figure 13 In the third embodiment, the shape of the free layer membrane is changed from the rounded rectangle design described in this embodiment to the original right-angled rectangle. An antiferromagnetic layer is added, and the position of the through hole and the placement angle of the fixed layer or the free layer are adjusted to obtain the aforementioned preset angle, thereby reducing the switching current density that requires flipping the aforementioned components.

[0085] In summary, the planar magnetized spin-orbit magnetic component proposed in this invention is designed to add an antiferromagnetic layer between the heavy metal layer and the magnetic tunneling interface, thereby increasing the thermal stability of the free layer during flipping. This invention designs the free layer's film shape as a rounded rectangle, using the radius of the rounded corners to influence the magnetic moment flipping characteristics, making the free layer's magnetic moment more easily adjusted by the spin-orbit torque. This invention adjusts the placement angle of the via and the fixed layer, ensuring a preset angle between the switching current and the minor axis of the ellipse shape of the fixed layer's film surface, thus reducing the switching current density required to flip the component. All of the aforementioned methods can be applied to the planar magnetized spin-orbit magnetic component, ensuring the free layer has thermal stability while making the free layer's magnetic moment more easily magnetized by the spin-orbit torque induced by the current in the heavy metal layer. This reduces the write current level in the heavy metal layer, thereby achieving power saving.

[0086] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A planar spin-orbit magnetic assembly, comprising: Heavy metal layer; An antiferromagnetic layer is disposed on the heavy metal layer; as well as A magnetic tunneling interface is disposed on the antiferromagnetic layer. The magnetic tunneling interface includes: The free layer has a membrane surface shape of a rounded rectangle; A barrier layer is disposed on the free layer; and A fixing layer is disposed on the barrier layer, and the film surface of the fixing layer is elliptical. The first through hole and the second through hole are disposed below the heavy metal layer; The first lower electrode is coupled to the heavy metal layer via the first through-hole; and The second lower electrode is coupled to the heavy metal layer via the second through-hole. The line connecting the first through hole and the second through hole on the film surface plane forms an angle with the minor axis direction of the ellipse in the shape of the fixed layer film surface, or the long side direction of the free layer forms an angle with the major axis direction of the ellipse in the shape of the fixed layer film surface, wherein the angle is not zero degrees.

2. The planar spin-orbit magnetic assembly according to claim 1, wherein the elliptical membrane surface area is smaller than the rounded rectangular membrane surface area.

3. The planar spin-orbit magnetic assembly according to claim 2, wherein the barrier layer, the free layer and the antiferromagnetic layer have the shape of rounded rectangles.

4. The planar spin-orbit magnetic assembly as described in claim 3, further comprising: A cover layer is disposed on the fixed layer. The film surface shape of the covering layer and the fixing layer is elliptical.

5. The planar spin-orbit magnetic assembly as described in claim 4, further comprising: The upper electrode is disposed on the cover layer.

6. The planar spin-orbit magnetic assembly of claim 1, wherein the surface shape of the antiferromagnetic layer is the same as the surface shape of the free layer.

7. The planar spin-orbit magnetic component as claimed in claim 3, wherein the film surface shape of the heavy metal layer is a right-angled rectangle or a rounded rectangle, wherein the film surface area of ​​the right-angled rectangle or the rounded rectangle is greater than the film surface area of ​​the elliptical shape.

8. The planar spin-orbit magnetic assembly as claimed in claim 1, wherein the material of the fixing layer is a ferromagnetic material with planar magnetic moments, and the magnetic moment vectors of the fixing layer are arranged parallel to the film surface.

9. The planar spin-orbit magnetic assembly of claim 1, wherein the annealing direction of the fixing layer in the semiconductor process for manufacturing the planar spin-orbit magnetic assembly is the same as the long axis direction of the film surface shape of the fixing layer.

10. The planar spin-orbit magnetic assembly of claim 1, wherein the material of the free layer is a ferromagnetic material with horizontal anisotropy, and the magnetic moment vector of the free layer is arranged parallel to the film surface.

11. The planar spin-orbit magnetic assembly of claim 1, wherein the heavy metal layer receives an input current through the electrode contacts to generate a spin current, thereby causing the magnetic tunneling interface to undergo magnetization reversal.

12. A planar spin-orbit magnetic assembly, comprising: Heavy metal layer; as well as An antiferromagnetic layer is disposed on the heavy metal layer; A magnetic tunneling interface is disposed on the antiferromagnetic layer; The first through hole and the second through hole are disposed below the heavy metal layer; The first lower electrode is coupled to the heavy metal layer via the first through hole; as well as The second lower electrode is coupled to the heavy metal layer via the second through-hole. The magnetic tunneling interface includes: Free layer; A barrier layer is disposed on the free layer; and A fixing layer is disposed on the barrier layer, wherein the film surface of the fixing layer is elliptical. The line connecting the first through hole and the second through hole on the film surface plane has a first angle with the minor axis direction of the ellipse in the shape of the fixed layer film surface, wherein the first angle is not zero degrees; or, the long side direction of the free layer has a second angle with the major axis direction of the ellipse in the shape of the fixed layer film surface, wherein the second angle is not a right angle.

13. The planar spin-orbit magnetic assembly of claim 12, wherein the free layer has a rounded rectangular shape and the elliptical membrane area is smaller than the rounded rectangular membrane area.

14. The planar spin-orbit magnetic assembly of claim 13, wherein the barrier layer, the free layer, and the antiferromagnetic layer all have the shape of rounded rectangles.

15. The planar spin-orbit magnetic assembly of claim 12, further comprising: A cover layer is disposed on the fixed layer. The film surface shape of both the covering layer and the fixing layer is elliptical.

16. The planar spin-orbit magnetic assembly of claim 12, wherein the surface shape of the antiferromagnetic layer is the same as the surface shape of the free layer.

17. The planar spin-orbit magnetic assembly of claim 12, wherein the surface shape of the heavy metal layer is a right-angled rectangle or a rounded rectangle, wherein the surface area of ​​the right-angled rectangle or the rounded rectangle is greater than the surface area of ​​the elliptical shape.

18. The planar spin-orbit magnetic assembly of claim 12, wherein the material of the fixing layer is a ferromagnetic material having a planar magnetic moment, and the magnetic moment vector of the fixing layer is arranged parallel to the film surface.

19. The planar spin-orbit magnetic assembly of claim 12, wherein the annealing direction of the fixing layer in the semiconductor process for manufacturing the planar spin-orbit magnetic assembly is the same as the long axis direction of the film surface shape of the fixing layer.

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