Semiconductor processing using a cooled electrostatic chuck
By combining an electrostatic chuck and a cryogenic cooler, the problems of smooth trench formation and etching selectivity in substrate processing at low temperatures were solved, achieving uniform low-temperature processing of the substrate and improving the yield and performance of semiconductor devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- APPLIED MATERIALS INC
- Filing Date
- 2022-01-13
- Publication Date
- 2026-05-26
AI Technical Summary
In semiconductor manufacturing, existing technologies struggle to effectively form smooth, vertically sidewalled trenches at low temperatures, and the selective etching between silicon and silicon dioxide is insufficient, affecting device yield and performance.
An electrostatic chuck (ESC) base assembly combined with a cryogenic cooler is used to maintain the substrate at a temperature below -20 degrees Celsius through a vacuum zone and refrigerant pipelines. Temperature uniformity is adjusted by combining a resistance heater to achieve low-temperature processing of the substrate.
Uniform temperature control of the substrate was achieved at low temperatures, reducing spontaneous etching, improving the etching selectivity between silicon and silicon dioxide, and increasing device yield and circuit density.
Smart Images
Figure CN116235286B_ABST