Semiconductor relay module

Abstract

A semiconductor relay module has a first semiconductor relay, a second semiconductor relay, first to third input terminals exposed from a housing, a first output terminal, and a second output terminal. The first semiconductor relay has a first optical coupling portion and a first switching portion, and the second semiconductor relay has a second optical coupling portion and a second switching portion. The first switching portion and the second switching portion are connected by an output connection line, the third input terminal is connected to an input connection line, and the input connection line and the output connection line are covered by the housing.

Description

Technical Field

[0001] This disclosure relates to a semiconductor relay module. Background Technology

[0002] Previously, a semiconductor relay was known that used an optocoupler in the input section to isolate the input and output, while switching the closed / open state between the output terminals based on the input signal input to the input terminals.

[0003] For example, Patent Document 1 discloses a semiconductor relay module, which provides two sets of light-receiving devices and output circuits for each light-emitting element. The output circuit is composed of a gate charging and discharging circuit and a MOS type field-effect transistor (Metal Oxide Semiconductor Field Effect Transistor; hereinafter referred to as MOSFET).

[0004] Patent Document 2 discloses a semiconductor relay module that integrates two sets of semiconductor relays in a single package. Each semiconductor relay includes one of the aforementioned light-emitting elements, a light-receiving device, and an output circuit. Furthermore, the semiconductor relay module has a pair of output terminals and a common external input terminal extending from the connection point of each output circuit to the outside of the package.

[0005] Existing technical documents

[0006] Patent documents

[0007] Patent Document 1: Japanese Patent Application Publication No. 07-046109.

[0008] Patent Document 2: Japanese Patent Application Publication No. 2002-185033 Summary of the Invention

[0009] However, in the existing structure disclosed in Patent Document 1, since the light signal output from the light-emitting element is input to two light-receiving devices respectively, it is difficult to inspect the two sets of output circuits separately.

[0010] On the other hand, the structure disclosed in Patent Document 2 allows for such individual inspection. However, since a common external input terminal is provided between a pair of output terminals as the inspection terminal, there is a problem that the insulation distance between the output terminals cannot be guaranteed. In this case, it is difficult to increase the withstand voltage between the output terminals when the semiconductor relay module is in the off state.

[0011] The semiconductor relay module disclosed herein comprises: a first semiconductor relay; a second semiconductor relay; a housing covering the first semiconductor relay and the second semiconductor relay; a first input terminal exposed from the housing; a second input terminal exposed from the housing; a first output terminal exposed from the housing; a second output terminal exposed from the housing; a third input terminal exposed from the housing; an input connection line covered by the housing; and an output connection line covered by the housing. The first semiconductor relay comprises: a first optical coupling portion having a first light-emitting element and a first light-receiving device for receiving light signals from the first light-emitting element; and a first switching portion having a first MOS field-effect transistor (MOSFET), the first MOS field-effect transistor closing or opening the connection between the first output terminal and the second output terminal of the first semiconductor relay according to the output signal of the first light-receiving device. The second semiconductor relay comprises: a second optical coupling portion having... The device comprises a second light-emitting element and a second light-receiving device for receiving light signals from the second light-emitting element; and a second switching section having a second MOSFET, the second MOSFET closing or opening the connection between a first output terminal and a second output terminal of the second semiconductor relay according to the output signal of the second light-receiving device; a first input terminal connected to the anode of the first light-emitting element; a second input terminal connected to the cathode of the second light-emitting element; the cathode of the first light-emitting element of the first semiconductor relay and the anode of the second light-emitting element of the second semiconductor relay connected via the input connection line; a first output terminal connected to the first output terminal of the first semiconductor relay; a second output terminal connected to the second output terminal of the second semiconductor relay; the second output terminal of the first semiconductor relay and the first output terminal of the second semiconductor relay connected via the output connection line; and a third input terminal connected to the input connection line.

[0012] According to this disclosure, multiple semiconductor relays can be inspected independently, and high withstand voltage can be achieved between output terminals. Attached Figure Description

[0013] Figure 1A This is a perspective view of the semiconductor relay module involved in Implementation Method 1.

[0014] Figure 1B This is a top view of the semiconductor relay module involved in Embodiment 1.

[0015] Figure 1C This is a side view of the semiconductor relay module according to Embodiment 1.

[0016] Figure 2 This is a circuit diagram of the semiconductor relay module involved in Implementation Method 1.

[0017] Figure 3A This is a top view of the semiconductor relay module when inspecting the first semiconductor relay.

[0018] Figure 3B This is a top view of the semiconductor relay module when inspecting the second semiconductor relay.

[0019] Figure 4 This is a diagram showing a part of the manufacturing process of a semiconductor relay module.

[0020] Figure 5 This diagram illustrates a portion of the other manufacturing processes for a semiconductor relay module.

[0021] Figure 6 It was through Figure 5 A top view of a semiconductor relay module manufactured using the process shown.

[0022] Figure 7 This is a circuit diagram of a semiconductor relay module used for comparison.

[0023] Figure 8 This is a top view of the semiconductor relay module involved in Variation Example 1.

[0024] Figure 9 This is a top view of the semiconductor relay module involved in Variation Example 2.

[0025] Figure 10A This is a three-dimensional view of the semiconductor relay module involved in Variation Example 3.

[0026] Figure 10B This is a top view of the semiconductor relay module involved in Variation Example 3.

[0027] Figure 11 This is a top view of the semiconductor relay module involved in Embodiment 2.

[0028] Figure 12 This is a top view of the semiconductor relay module involved in Variation Example 4.

[0029] Figure 13 This is the circuit diagram of the semiconductor relay module involved in Variation Example 5. Detailed Implementation

[0030] The embodiments of this disclosure will now be described in detail with reference to the accompanying drawings. The following description of preferred embodiments is merely illustrative in nature and is not intended to limit the invention, its applicability, or its uses.

[0031] (Implementation Method 1)

[0032] [Structure and Operation of Semiconductor Relay Modules]

[0033] Figure 1A A perspective view of the semiconductor relay module 1000 according to Embodiment 1 is shown. Figure 1B This shows a top view of the semiconductor relay module 1000 according to Embodiment 1. Figure 1C A side view is shown, taken from the output terminal side of the semiconductor relay module 1000 according to Embodiment 1. Figure 2 A circuit diagram of the semiconductor relay module 1000 is shown. Furthermore, for ease of explanation, in... Figures 1A to 1C The outlines of the housing 500, the first light-transmitting part 521, and the second light-transmitting part 522 are shown in dashed lines. Additionally, in... Figure 1C The diagram of the 600 metal wire is omitted.

[0034] Furthermore, in the following description, the arrangement direction of the first to fourth input terminals 310, 320, 330, and 340 is sometimes referred to as the Y direction (first direction), the arrangement direction of the first optical coupling unit 110 and the first switching unit 150, and the arrangement direction of the second optical coupling unit 210 and the second switching unit 250 are sometimes referred to as the X direction (second direction), and the direction intersecting the Y and X directions is sometimes referred to as the Z direction (third direction). In the X direction, the side where the first to fourth input terminals 310, 320, 330, and 340 are arranged is sometimes referred to as the left or left side, and the side where the first output terminal 410 and the second output terminal 420 are arranged is sometimes referred to as the right or right side. In the Z direction, the side where the first LED (Light Emitting Diode) 120 and the second LED 220 are arranged is sometimes referred to as the upper or upper side or above, and the side where the first light receiving device 130 and the second light receiving device 230 are arranged is sometimes referred to as the lower or lower side or below.

[0035] like Figures 1A-1C As shown, the semiconductor relay module 1000 includes a first semiconductor relay 100, a second semiconductor relay 200, a housing 500, first to fourth input terminals 310, 320, 330, and 340, a first output terminal 410, and a second output terminal 420.

[0036] like Figure 2 As shown, the first semiconductor relay 100 is composed of a first optical coupling section 110 and a first switching section 150. Figure 1BAs shown, the first optical coupling section 110 includes a first light-emitting element 120, a first light-receiving device 130, and a first light-transmitting section 521. Furthermore, the first light-emitting element 120 is composed of one or more light-emitting diodes (hereinafter referred to as LEDs). In the following description, the first light-emitting element 120 will be referred to as the first LED 120.

[0037] In the first optical coupling section 110, the first LED 120 connects its cathode to the chip pad 360 at the end of the third input terminal 330 located inside the housing 500 via a conductive adhesive material such as silver paste (not shown), and connects its anode to one end of the metal wire 600. The other end of the metal wire 600 is connected to the first input terminal 310. For example, gold wire is used as the metal wire 600.

[0038] The first light-receiving device 130 is the first light-receiving element 131 (refer to...) Figure 2 ) and the first control circuit 132 (refer to Figure 2 It is formed on a semiconductor substrate (not shown) or mounted on a mounting substrate (not shown). Furthermore, the first light-receiving element 131 is composed of a photodiode array (hereinafter referred to as a PDA). In the following description, the first light-receiving element 131 will be referred to as the first PDA 131.

[0039] The first light-receiving device 130 is mounted on the surface of the chip pad 140 using a conductive adhesive material such as silver paste. Additionally, the first control circuit 132 is electrically connected to the chip pad 140. The source of the first light-receiving device 130 is connected to the chip pad 140 via a metal wire 600.

[0040] The first light-transmitting portion 521 is made of an insulating, light-transmitting resin and is configured to cover the first LED 120, the first light-receiving device 130, and the space between them. The first light-transmitting portion 521 is configured as a light coupling space between the first LED 120 and the first light-receiving device 130. Furthermore, the first light-transmitting portion 521 is also formed to cover the first switching portion 150.

[0041] The first switching unit 150 includes MOSFET 161 and MOSFET 162, each of which has a gate (G) electrode (see reference) on its surface. Figure 2 Hereinafter referred to as gate (G) and source (S) electrodes (refer to...). Figure 2 Hereinafter referred to as the source (S). A drain (D) electrode is disposed on the back side (see reference). Figure 2 Hereinafter referred to as drain (D). A vertical N-channel MOSFET with a known structure.

[0042] like Figure 1B and Figure 2As shown, within the first semiconductor relay 100, the sources (S) are electrically connected, and MOSFET 161 and MOSFET 162 are connected in series. The specific connection relationship is further explained below.

[0043] The gate (G) of MOSFET 161 is connected to the first control circuit 132 via metal line 600. Similarly, the gate (G) of MOSFET 162 is connected to the first control circuit 132 via metal line 600. On the other hand, the sources (S) of MOSFET 161 and MOSFET 162 are connected to the chip pad 140 on which the first light-receiving device 130 is mounted via metal line 600. That is, the sources (S) of MOSFET 161 and MOSFET 162 are electrically connected to the first control circuit 132 via metal line 600 and chip pad 140. Furthermore, the drain (D) of MOSFET 161 is connected to the surface of chip pad 460 via a conductive adhesive material such as silver paste, and similarly, the drain (D) of MOSFET 162 is connected to the surface of chip pad 470.

[0044] The second semiconductor relay 200 comprises a second optical coupling section 210 and a second switching section 250. The second optical coupling section 210 includes a second light-emitting element 220, a second light-receiving device 230, and a second light-transmitting section 522. Furthermore, the second light-emitting element 220 is composed of one or more light-emitting diodes (hereinafter referred to as LEDs). In the following description, the second light-emitting element 220 will be referred to as the second LED 220.

[0045] In the second optical coupling section 210, the second LED 220 connects its cathode to the chip pad 370 at the end of the second input terminal 320 located inside the housing 500 via a conductive adhesive material such as silver paste (not shown), and connects its anode to one end of the metal wire 600. The other end of the metal wire 600 is connected to the fourth input terminal 340.

[0046] The second light-receiving device 230 is the second light-receiving element 231 (refer to...) Figure 2 ) and second control circuit 232 (refer to Figure 2 It is formed on a semiconductor substrate (not shown) or mounted on a mounting substrate (not shown). Furthermore, the second light-receiving element 231 is constituted as a PDA. In the following description, the second light-receiving element 231 will be referred to as the second PDA 231.

[0047] The second light-receiving device 230 is mounted on the surface of the chip pad 240 using a conductive adhesive material such as silver paste. Additionally, the second control circuit 232 is electrically connected to the chip pad 240. The source of the second light-receiving device 230 is connected to the chip pad 240 via a metal wire 600.

[0048] The second light-transmitting portion 522, like the first light-transmitting portion 521, is made of an insulating, light-transmitting resin and is configured to cover the second LED 220, the second light-receiving device 230, and the space between them. The second light-transmitting portion 522 forms the light coupling space between the second LED 220 and the second light-receiving device 230. Furthermore, the second light-transmitting portion 522 also covers the second switching portion 250. Additionally, the first light-transmitting portion 521 and the second light-transmitting portion 522 are arranged at a predetermined interval in the Y direction.

[0049] The second switching section 250 has MOSFET 261 and MOSFET 262. Similar to MOSFET 161 and MOSFET 162, MOSFET 261 and MOSFET 262 are vertical N-channel MOSFETs with known structures.

[0050] like Figure 1B and Figure 2 As shown, in the second semiconductor relay 200, MOSFET 261 and MOSFET 262 are connected in series, and their connection relationship is the same as that of MOSFET 161 and MOSFET 162 in the first semiconductor relay 100.

[0051] In other words, the gate (G) of MOSFET 261 is connected to the second control circuit 232 via metal line 600. Similarly, the gate (G) of MOSFET 262 is connected to the second control circuit 232 via metal line 600. On the other hand, the source (S) of MOSFET 262 and the source (S) of MOSFET 262 are connected to the chip pad 240 on which the second light-receiving device 230 is mounted via metal line 600. That is, the source (S) of MOSFET 261 and the source (S) of MOSFET 262 are electrically connected to the second control circuit 232 via metal line 600 and chip pad 240. Furthermore, the drain (D) of MOSFET 261 is connected to the surface of chip pad 480 via a conductive adhesive material such as silver paste, and similarly, the drain (D) of MOSFET 262 is connected to the surface of chip pad 490.

[0052] In addition, as according to Figure 2 As clearly stated, the MOSFET 161 of the first switching section 150 and the MOSFET 261 of the second switching section 250 are arranged along the Y direction with the source (S) and drain (D) aligned in the same direction. The MOSFET 162 of the first switching section 150 and the MOSFET 262 of the second switching section 250 are arranged along the Y direction with the source (S) and drain (D) aligned in the same direction.

[0053] The housing 500 is an insulating resin structure having the first light-transmitting portion 521, the second light-transmitting portion 522, and the light-shielding portion 510. Furthermore, the housing 500 covers a portion of the first semiconductor relay 100, the second semiconductor relay 200, and a portion of each of the first to fourth input terminals 310, 320, 330, and 340, as well as a portion of each of the first output terminal 410 and the second output terminal 420.

[0054] The light-shielding portion 510 is made of an insulating light-shielding resin and is configured to cover the first optical coupling portion 110 including the first light-transmitting portion 521, the first switching portion 150, the second optical coupling portion 210 including the second light-transmitting portion 522, and the second switching portion 250. Furthermore, the light-shielding portion 510 is arranged to fill the space between the first light-transmitting portion 521 and the second light-transmitting portion 522.

[0055] A light-blocking portion 510 is provided between the first light-transmitting portion 521 and the second light-transmitting portion 522, thereby enabling light to pass through... Figure 1C As shown, the light signal from the first LED 120 disposed in the first semiconductor relay 100 is prevented from entering the second PDA 231 disposed in the second semiconductor relay 200. Similarly, the light signal from the second LED 220 disposed in the second semiconductor relay 200 is prevented from entering the first PDA 131 disposed in the first semiconductor relay 100. In addition, the light signals from the first LED 120 and the second LED 220 are prevented from leaking to the outside of the housing 500.

[0056] like Figure 1A As shown, the first to fourth input terminals 310, 320, 330, and 340 are led out from the middle portion of the housing 500 in the vertical direction and bent to the outside of the housing 500. After extending downward along the side of the housing 500 and being further bent, they extend approximately parallel to the lower surface of the housing 500. Additionally, the first to fourth input terminals 310, 320, 330, and 340 are bent upward inside the housing 500 and further bent to extend approximately parallel to the upper surface of the housing 500. Furthermore, the portions of the second input terminal 320 and the third input terminal 330 that extend approximately parallel to the upper surface of the housing 500 are further bent in the Y direction. Chip pads 360 and 370 are respectively provided at the ends of the second input terminal 320 and the third input terminal 330 inside the housing 500.

[0057] The first input terminal 310 is connected to the anode of the first LED 120 via a metal wire 600, and the third input terminal 330 is electrically connected to the cathode of the first LED 120 via a chip pad 360 disposed at the end inside the housing 500.

[0058] The fourth input terminal 340 is connected to the anode of the second LED 220 via a metal wire 600, and the second input terminal 320 is electrically connected to the cathode of the second LED 220 via a chip pad 370 located at the end inside the housing 500.

[0059] On the other hand, such as Figures 1A-1C As shown, the third input terminal 330 and the fourth input terminal 340 are interconnected via an input connection line 350. The input connection line 350 extends along the Y direction, and its surface is covered by the light-shielding portion 510 of the housing 500. Furthermore, the input connection line 350 connects to the portions of the third input terminal 330 and the fourth input terminal 340 before they bend upwards inside the housing 500. Additionally, the output connection line 450 is positioned at the same height as the input connection line 350 along the Z direction from the lower surface of the housing 500.

[0060] Furthermore, in this application specification, "parallel" or "identical" includes the manufacturing tolerances of each component constituting the semiconductor relay module 1000 and the assembly tolerances between the components, meaning parallel or identical, but not that the comparison objects are strictly parallel or identical.

[0061] like Figure 1A As shown, the first output terminal 410 and the second output terminal 420 are each led out from the middle portion of the housing 500 in the vertical direction to the outside of the housing 500 and bent, extending downward along the side of the housing 500 and further bent, extending approximately parallel to the lower surface of the housing 500. Additionally, the first output terminal 410 and the second output terminal 420 are bent downward inside the housing 500 and further bent to extend approximately parallel to the lower surface of the housing 500. Furthermore, chip pads 460 and 490 are respectively provided at the ends of the first output terminal 410 and the second output terminal 420 inside the housing 500.

[0062] The first to fourth input terminals 310, 320, 330, 340, the first output terminal 410, and the second output terminal 420 each have the aforementioned shapes, and the semiconductor relay module 1000 constitutes an SOP (Small Outline Package) package. In each of the first to fourth input terminals 310, 320, 330, 340, the first output terminal 410, and the second output terminal 420, the portion extending substantially parallel to the lower surface of the housing 500 becomes a connection portion for connection to a mounting substrate (not shown). By providing an SOP package for the semiconductor relay module 1000, it is easy to mount the semiconductor relay module 1000 onto the surface of the mounting substrate. Furthermore, by bringing the ends of each of the first to fourth input terminals 310, 320, 330, 340, the first output terminal 410, and the second output terminal 420 outside the housing 500 closer to the housing 500, the mounting area of ​​the semiconductor relay module 1000 relative to the mounting substrate can be reduced.

[0063] The first output terminal 410 is electrically connected to the drain (D) of the MOSFET 161 of the first switching section 150 via a chip pad 460 located at the end inside the housing 500. The second output terminal 420 is electrically connected to the drain (D) of the MOSFET 262 of the second switching section 250 via a chip pad 490 located at the end inside the housing 500. The MOSFET 162 of the first switching section 150 is mounted on chip pad 470, and the MOSFET 261 of the second switching section 250 is mounted on chip pad 480.

[0064] Furthermore, the chip pads 140 disposed in the first optical coupling section 110, the chip pads 240 disposed in the second optical coupling section 210, the chip pads 460 and 470 disposed in the first switching section 150, and the chip pads 480 and 490 disposed in the second switching section 250 are configured to be at the same height along the Z direction from the lower surface of the housing 500.

[0065] On the other hand, such as Figures 1A-1C As shown, the chip pad 470 of the first switching section 150, on which the MOSFET 162 is disposed, and the chip pad 480 of the second switching section 250, on which the MOSFET 261 is disposed, are interconnected via an output connection line 450. That is, the drain (D) of the MOSFET 162 of the first switching section 150 is electrically connected to the drain (D) of the MOSFET 261 of the second switching section 250.

[0066] The output connection line 450 has a first portion 450a extending in the Y direction, the surface of which is covered by the light-shielding portion 510 of the housing 500. In addition, the two ends of the first portion 450a are bent to the left in the X direction and connected to the chip pad 470 and the chip pad 480 respectively.

[0067] Next, refer to Figures 1A-1C as well as Figure 2 The operation of the semiconductor relay module 1000 will be explained. Furthermore, in the following description, the drain (D) of MOSFET 161 or the chip pad 460 at the same potential is sometimes referred to as the first output terminal of the first semiconductor relay 100. The drain (D) of MOSFET 162 or the chip pad 470 at the same potential is sometimes referred to as the second output terminal of the first semiconductor relay 100.

[0068] Additionally, the drain (D) of MOSFET 261 or the chip pad 480 at the same potential is sometimes referred to as the first output terminal of the second semiconductor relay 200. The drain (D) of MOSFET 262 or the chip pad 490 at the same potential is sometimes referred to as the second output terminal of the second semiconductor relay 200.

[0069] By applying a specified voltage between the first input terminal 310 and the second input terminal 320, the first LED 120 and the second LED 220 emit light and output light signals respectively.

[0070] In the first semiconductor relay 100, when a light signal is output from the first LED 120, the first PDA 131 of the first light-receiving device 130 receives the light signal and outputs a signal corresponding to the intensity of the light signal. The first control circuit 132 applies a voltage signal corresponding to the signal output from the first PDA 131 to the gates (G) of the MOSFETs 161 and MOSFET 162 of the first switching section 150 to charge the gates of the MOSFETs 161 and MOSFET 162.

[0071] When the gate (G) potentials of MOSFETs 161 and 162 are above a predetermined value, current flows between the drain (D) and source (S) of MOSFET 161, and current flows between the drain (D) and source (S) of MOSFET 162. As a result, the drain (D) of MOSFET 161 and the drain (D) of MOSFET 162 become conductive, and the first semiconductor relay 100 becomes closed.

[0072] Similarly, in the second semiconductor relay 200, when a light signal is output from the second LED 220, the second PDA 231 of the second light receiving device 230 receives the light signal and outputs a signal corresponding to the intensity of the light signal. The second control circuit 232 applies a voltage signal corresponding to the signal output from the second PDA 231 to the gates (G) of the MOSFETs 261 and MOSFET 262 of the second switching section 250 to charge the gates (G) of the MOSFETs 261 and MOSFET 262.

[0073] When the gate (G) potentials of MOSFETs 261 and 262 are above a predetermined value, current flows between the drain (D) and source (S) of MOSFET 261, and current flows between the drain (D) and source (S) of MOSFET 262. As a result, the drain (D) of MOSFET 261 and the drain (D) of MOSFET 262 become conductive, and the second semiconductor relay 200 becomes closed.

[0074] On the other hand, when no voltage is applied between the first input terminal 310 and the second input terminal 320, the first LED 120 and the second LED 220 do not emit light, and the first PDA 131 and the second PDA 231 do not output signals. In this case, the charge accumulated in the gates (G) of MOSFETs 161 and 162 in the first switching section 150 is released via the first control circuit 132, and the potential of the gates (G) of MOSFETs 161 and 162 decreases. Additionally, the charge accumulated in the gates (G) of MOSFETs 261 and 262 in the second switching section 250 is released via the second control circuit 232, and the potential of the gates (G) of MOSFETs 261 and 262 decreases.

[0075] When the potential of the gate (G) of MOSFET 161 and MOSFET 162 in the first switching section 150 is below a predetermined threshold, no current flows between the drain (D) and source (S) of MOSFET 161 and MOSFET 162 respectively. As a result, the drain (D) of MOSFET 161 and the drain (D) of MOSFET 162 become non-conducting, and the first semiconductor relay 100 becomes off.

[0076] Similarly, when the potential of the gate (G) of MOSFETs 261 and 262 in the second switching section 250 is below a predetermined threshold, no current flows between the drain (D) and source (S) of MOSFETs 261 and 262. As a result, the drain (D) of MOSFET 261 and the drain (D) of MOSFET 262 become non-conducting, and the second semiconductor relay 200 becomes off.

[0077] In other words, the first switch unit 150 is configured to close and open the first output terminal and the second output terminal of the first semiconductor relay 100 according to the output signal of the first light-receiving device 130. The second switch unit 250 is configured to close and open the first output terminal and the second output terminal of the second semiconductor relay 200 according to the output signal of the second light-receiving device 230.

[0078] Furthermore, the third input terminal 330 and the fourth input terminal 340 are used as input terminals for inspection as described later. Therefore, during normal use, when a specified voltage is applied between the first input terminal 310 and the second input terminal 320, it is not necessary to apply an external voltage to the third input terminal 330 and the fourth input terminal 340.

[0079] As explained above, when the first semiconductor relay 100 and the second semiconductor relay 200 are both in the closed state, the first output terminal 410 and the second output terminal 420 are in a conductive state, and the semiconductor relay module 1000 is in a closed state. When the first semiconductor relay 100 and the second semiconductor relay 200 are both in the open state, the first output terminal 410 and the second output terminal 420 are in a non-conductive state, and the semiconductor relay module 1000 is in an open state.

[0080] [Inspection process for semiconductor relay modules]

[0081] Figure 3A A top view of the semiconductor relay module 1000 is shown when the first semiconductor relay is being inspected. Figure 3B A top view of the semiconductor relay module 1000 is shown when the second semiconductor relay is being inspected.

[0082] If any component constituting the semiconductor relay module 1000 malfunctions, the semiconductor relay module 1000 will not operate as described above. For example, even if a specified voltage is applied between the first input terminal 310 and the second input terminal 320, the semiconductor relay module 1000 may sometimes remain in an open state instead of a closed state. Furthermore, even if the voltage application between the first input terminal 310 and the second input terminal 320 is stopped, the semiconductor relay module 1000 may sometimes remain in a closed state instead of an open state.

[0083] In this case, such as Figure 3A As shown, a power supply 2200 is connected between the fourth input terminal 340 and the second input terminal 320, so that the second LED 220 is always lit (always on). In this state, when a voltage is applied between the first input terminal 310 and the third input terminal 330, the semiconductor relay module 1000 is closed, and the first semiconductor relay 100 can be said to operate normally. Furthermore, when the semiconductor relay module 1000 is open when the voltage is stopped at other times, the first semiconductor relay 1000 can also be said to operate normally.

[0084] On the other hand, if the semiconductor relay module 1000 fails to be closed when a voltage is applied between the first input terminal 310 and the third input terminal 330, or fails to be open when the voltage is stopped, an abnormality may have occurred inside the first semiconductor relay 100.

[0085] In addition, such as Figure 3B As shown, a power supply 2100 is connected between the first input terminal 310 and the third input terminal 330, so that the first LED 120 is always lit (always on). In this state, when a voltage is applied between the fourth input terminal 340 and the second input terminal 320, the semiconductor relay module 1000 is closed, and the second semiconductor relay 200 can be said to operate normally. Furthermore, when the semiconductor relay module 1000 is open at other timed stops, the second semiconductor relay 200 can also be said to operate normally.

[0086] On the other hand, if the semiconductor relay module 1000 is not in a closed state when voltage is applied or is not in a closed state when voltage is stopped, an abnormality may have occurred inside the second semiconductor relay 200.

[0087] Furthermore, in either Figure 3A The wiring shown is Figure 3BIn any of the wiring configurations shown, if the closed / open state of the semiconductor relay module 1000 remains unchanged, an abnormality may occur in either or both of the first semiconductor relay 100 and the second semiconductor relay 200. For example, if a malfunction occurs in the first LED 120, then regardless of the wiring configuration... Figure 3A The wiring shown is Figure 3B In any of the wiring configurations shown, the second semiconductor relay 200 will not be in a closed state. Therefore, the semiconductor relay module 1000 will not transition to a closed state.

[0088] like Figure 3A and Figure 3B As shown, either the first semiconductor relay 100 or the second semiconductor relay 200 is always on in advance. Therefore, without providing a separate test output terminal at the midpoint between the output terminals, it is possible to perform tests such as the on / off characteristics of the other semiconductor relay and the withstand voltage measurement when it is off.

[0089] [Manufacturing Method of Semiconductor Relay Module]

[0090] Figure 4 This illustration shows a portion of the manufacturing process of the semiconductor relay module involved in this embodiment. Figure 5 This illustrates part of another manufacturing process for a semiconductor relay module. Figure 6 Showing the process Figure 5 A top view of a semiconductor relay module manufactured using the process shown.

[0091] Figure 4 The diagram shown on the left illustrates the state after the lead frame 700, which houses the components constituting the first optical coupling part 110, the second optical coupling part 210, the first switch part 150, and the second switch part 250, is sealed using a light-transmitting resin constituting the first light-transmitting part 521 and the second light-transmitting part 522. Furthermore, although in Figure 4 Not shown, but at this point in time, the first LED 120, the second LED 220, the first light-receiving device 130 and the second light-receiving device 230 are mounted on chip pads 360, 370, 140 and 240, which are part of the lead frame 700 and are disposed inside the first light-transmitting portion 521 and the second light-transmitting portion 522, and are bonded with metal wires 600 at specified positions.

[0092] On the outer sides of the first light-transmitting portion 521 and the second light-transmitting portion 522, a primary guide bar 710, first to fourth input terminals 310, 320, 330, and 340, a first output terminal 410, and a second output terminal 420, which are part of the lead frame 700, protrude. The first to fourth input terminals 310, 320, 330, and 340 are interconnected by the primary guide bar 710 extending in a direction intersecting their extension directions. Furthermore, the first output terminal 410 and the second output terminal 420 are interconnected by the primary guide bar 710 extending in a direction intersecting their extension directions. Additionally, no output terminals are provided at positions facing the third input terminal 330 and the fourth input terminal 340, respectively. Figure 4 The process shown was previously cut off from the primary guide bar 710.

[0093] Next, as Figure 4 As shown on the right, a portion of the primary guide bar 710 is cut off. At this time, the primary guide bar 710 connecting the third input terminal 330 and the fourth input terminal 340 is retained. Additionally, the primary guide bar 710 used to connect the portion of the output terminal that has been pre-cut off is also retained. The former primary guide bar 710 corresponds to the input connection line 350, and the latter primary guide bar 710 corresponds to the output connection line 450. Then, the first light-transmitting portion 521, the second light-transmitting portion 522, and the retained primary guide bar 710 are covered with a light-shielding resin (not shown) constituting the light-shielding portion 510 to obtain the semiconductor relay module 1000.

[0094] According to this embodiment, the primary guide bar 710 constituting the lead frame 700 can be used as the input connection line 350 and the output connection line 450, and the process for forming these connection lines can be omitted. As a result, the manufacturing cost of the semiconductor relay module 1000 can be reduced.

[0095] Furthermore, by using the lead frame 700 shown in this embodiment, other types of semiconductor relay modules 1100 can be easily manufactured. (See also...) Figure 5 , Figure 6 This needs to be explained.

[0096] Figure 5 The process shown is equivalent to Figure 4 The process shown. However, in Figure 5 In the example shown, the second output terminal 421 and the first output terminal 412, which are located opposite to the second input terminal 321 and the first input terminal 312 respectively, are not cut off from the primary guide bar 710 and are retained.

[0097] In this state, the primary guide bar 710 is cut off on both the input and output sides. Then, the first light-transmitting part 521 and the second light-transmitting part 522 are covered with the light-shielding resin constituting the light-shielding part 510.

[0098] In this way, it is possible to manufacture a first semiconductor relay 100 and a second semiconductor relay 200 that independently perform closing and opening actions into a single package. Figure 6 The semiconductor relay module 1100 shown is shown.

[0099] like Figure 6 As shown, the first semiconductor relay 100 has a first input terminal 311, a second input terminal 321, a first output terminal 411, and a second output terminal 421. The second semiconductor relay 200 has a first input terminal 312, a second input terminal 322, a first output terminal 412, and a second output terminal 422.

[0100] [Effects, etc.]

[0101] As described above, the semiconductor relay module 1000 according to this embodiment includes at least: a first semiconductor relay 100, a second semiconductor relay 200, a housing 500 covering the first semiconductor relay 100 and the second semiconductor relay 200, first to fourth input terminals 310, 320, 330, and 340 exposed from the housing 500, and a first output terminal 410 and a second output terminal 420 exposed from the housing 500.

[0102] The first semiconductor relay 100 has a first optical coupling section 110 and a first switching section 150. The first optical coupling section 110 has a first LED 120 and a first light-receiving device 130 that receives the light signal from the first LED 120. The first switching section 150 has a MOSFET 161 and a MOSFET 162. The MOSFET 161 and MOSFET 162 close or open the connection between their respective first output terminals and second output terminals according to the output signal from the first light-receiving device 130.

[0103] The second semiconductor relay 200 has a second optical coupling section 210 and a second switching section 250. The second optical coupling section 210 has a second LED 220 and a second light-receiving device 230 that receives the light signal from the second LED 220. The second switching section 250 has a MOSFET 261 and a MOSFET 262. The MOSFET 261 and MOSFET 262 close and open the connection between the first output terminal and the second output terminal respectively, according to the output signal of the second light-receiving device 230.

[0104] The first input terminal 310 is connected to the anode of the first LED 120 of the first semiconductor relay 100, and the second input terminal 320 is connected to the cathode of the second LED 220 of the second semiconductor relay 200. The cathode of the first LED 120 of the first semiconductor relay 100 and the anode of the second LED 220 of the second semiconductor relay 200 are electrically connected via the input connection line 350.

[0105] The first output terminal 410 is connected to the first output terminal, i.e., chip pad 460, of the first semiconductor relay 100, and the second output terminal 420 is connected to the second output terminal, i.e., chip pad 490, of the second semiconductor relay 200. The second output terminal, i.e., chip pad 470, of the first semiconductor relay 100 is connected to the first output terminal, i.e., chip pad 480, of the second semiconductor relay 200 via an output connection line 450.

[0106] The semiconductor relay module 1000 also includes a third input terminal 330 and a fourth input terminal 340 that are connected to the input connection line 350 and exposed from the housing 500. The input connection line 350 and the output connection line 450 are covered by the housing 500.

[0107] According to this embodiment, a first input terminal 310 and a third input terminal 330 are connected to the first LED 120, and a fourth input terminal 340 and a second input terminal 320 are connected to the second LED 220.

[0108] Therefore, if used Figure 3A and Figure 3B As explained, the first semiconductor relay 100 and the second semiconductor relay 200 can be operated independently. Furthermore, this allows for independent inspection of both the first semiconductor relay 100 and the second semiconductor relay 200.

[0109] Furthermore, the third input terminal 330 is connected to the fourth input terminal 340 via the input connection line 350. Thus, by applying a predetermined voltage between the first input terminal 310 and the second input terminal 320, the first semiconductor relay 100 and the second semiconductor relay 200 can operate as a single semiconductor relay.

[0110] Furthermore, according to this embodiment, the insulation distance between the first output terminal 410 and the second output terminal 420 can be ensured, and a high withstand voltage between the first output terminal 410 and the second output terminal 420 can be achieved. This will be further explained below.

[0111] Figure 7 A circuit diagram of a semiconductor relay module used for comparison is shown. Figure 7 The circuit shown corresponds to the existing circuit disclosed in Patent Document 2.

[0112] Figure 7 The semiconductor relay module 1200 shown has three input terminals. Power supplies (not shown) are connected between the first input terminal 310 and the third input terminal 330, and between the third input terminal 330 and the second input terminal 320, respectively, thereby enabling the first LED 120 and the second LED 220 to be driven independently. This allows the first semiconductor relay 100 and the second semiconductor relay 200 to operate independently, and also allows for independent inspection. Furthermore, the first semiconductor relay 100 and the second semiconductor relay 200 can be operated as a single semiconductor relay.

[0113] Figure 7 The semiconductor relay module 1200 shown also has three output terminals, with an intermediate terminal 430 provided between the first output terminal 410 and the second output terminal 420 as a test output terminal. Therefore, when the first semiconductor relay 100 and the second semiconductor relay 200 operate as a single semiconductor relay, the insulation distance between the output terminals of the semiconductor relay module 1200 is shortened to either the distance between the first output terminal 410 and the intermediate terminal 430 or the distance between the intermediate terminal 430 and the second output terminal 420. Consequently, it becomes impossible to achieve a high withstand voltage between the first output terminal 410 and the second output terminal 420 when the semiconductor relay module 1200 is in the off state.

[0114] On the other hand, according to this embodiment, the first switch section 150 and the second switch section 250 are connected in series via the output connection line 450. Furthermore, no other features are provided. Figure 7 The intermediate terminal 430 is as shown. This ensures the insulation distance between the first output terminal 410 and the second output terminal 420, and also enables high withstand voltage between the first output terminal 410 and the second output terminal 420.

[0115] In particular, in this embodiment, the first LED 120 and the first PDA 131, and the second LED 220 and the second PDA 231 of the semiconductor relay module 1000 are electrically isolated. That is, the semiconductor relay module 1000 is a relay switch insulated from its input and output. Therefore, the input-side circuit, namely the first optocoupler 110 and the second optocoupler 210, can operate without being affected by the output side.

[0116] According to this embodiment, high withstand voltage can be achieved between the first output terminal 410 and the second output terminal 420, thereby alleviating the voltage constraints related to the load connected to the first output terminal 410 and the second output terminal 420.

[0117] A light-shielding part 510, made of light-shielding resin and used to shield light signals emitted from the first LED 120 and the second LED 220 respectively, is disposed between the first optical coupling part 110 of the first semiconductor relay 100 and the second optical coupling part 210 of the second semiconductor relay 200.

[0118] In this way, it is possible to prevent the light signal from the first LED 120 from leaking into the second semiconductor relay 200 and to prevent the light signal from the second LED 220 from leaking into the first semiconductor relay 100. As a result, when one of the first semiconductor relay 100 and the second semiconductor relay 200 operates independently, it is possible to suppress malfunctions in the other, thereby ensuring the inspection accuracy when the first semiconductor relay 100 and the second semiconductor relay 200 are inspected independently.

[0119] Preferably, the entire length of the output connection line 450 is covered by the housing 500.

[0120] In this way, the output connection line 450 can be reliably covered by the housing 500, which is an insulating resin structure. Therefore, the insulation distance between the first output terminal 410 and the second output terminal 420 can be ensured, and a high withstand voltage between the first output terminal 410 and the second output terminal 420 can be achieved.

[0121] The first semiconductor relay 100 and the second semiconductor relay 200 are arranged side by side along the Y direction (first direction). The portion of the output connection line 450 extending along the Y direction, namely the first portion 450a, is covered by the housing 500. In addition, the first portion 450a is arranged to the right in the X direction (second direction) relative to the first light-transmitting portion 521 and the second light-transmitting portion 522 made of light-transmitting resin formed on the first optical coupling portion 110 and the second optical coupling portion 210.

[0122] In this way, diffuse reflection can be prevented from occurring as stray light when light signals emitted from the first LED 120 and the second LED 220 illuminate the first portion 450a of the output connection line 450, thus preventing them from incident on the first PDA 131 and the second PDA 231. This improves the inspection accuracy when inspecting the first semiconductor relay 100 and the second semiconductor relay 200 separately. Furthermore, it simplifies the wiring layout within the semiconductor relay module 1000.

[0123] In addition, the portion of the input connection line 350 extending in the Y direction is covered by the housing 500 and is arranged to the left in the X direction relative to the first light-transmitting portion 521 and the second light-transmitting portion 522 formed in the first light coupling portion 110 and the second light coupling portion 210 and made of light-transmitting resin.

[0124] In this way, diffuse reflection of the light signals emitted from the first LED 120 and the second LED 220 onto the input connection line 350 can be prevented, thus preventing them from becoming stray light incident on the first PDA 131 and the second PDA 231. This improves the inspection accuracy when inspecting the first semiconductor relay 100 and the second semiconductor relay 200 separately. Furthermore, it simplifies the wiring layout within the semiconductor relay module 1000.

[0125] The first semiconductor relay 100 has MOSFETs 161 and 162, and the second semiconductor relay 200 has MOSFETs 261 and 262. The MOSFETs 161 in the first semiconductor relay 100 and 261 in the second semiconductor relay 200 are arranged with their source (S) and drain (D) aligned in the same direction. Similarly, the MOSFETs 162 in the first semiconductor relay 100 and 262 in the second semiconductor relay 200 are arranged with their source (S) and drain (D) aligned in the same direction.

[0126] In this way, compared to the case where the semiconductor relay module 1000 is composed of only one of the first semiconductor relay 100 and the second semiconductor relay 200, the withstand voltage between the first output terminal 410 and the second output terminal 420 can be increased by 2 times.

[0127] Furthermore, in this embodiment, the example described uses the case where the first semiconductor relay 100 includes MOSFET 161 and MOSFET 162, and the second semiconductor relay 200 includes MOSFET 261 and MOSFET 262. However, the number of MOSFETs included in the first semiconductor relay 100 and the second semiconductor relay 200 is not particularly limited thereto. For example, the first semiconductor relay 100 and the second semiconductor relay 200 may each include three or more MOSFETs.

[0128] In this case, high voltage withstand capability between the first output terminal 410 and the second output terminal 420 can also be achieved by specifying the MOSFET configuration as shown below.

[0129] That is, the first semiconductor relay 100 and the second semiconductor relay 200 each have a plurality of MOSFETs. At least one MOSFET disposed in the first semiconductor relay 100 and at least one MOSFET disposed in the second semiconductor relay 200 are arranged in such a way that their source (S) and drain (D) are in the same orientation.

[0130] The first semiconductor relay 100 includes MOSFETs 161 and 162 electrically connected in series, with their sources (S) electrically connected. The second semiconductor relay 200 includes MOSFETs 261 and 262 electrically connected in series, with their sources (S) electrically connected.

[0131] The first semiconductor relay 100 has a first light-receiving device 130. The first light-receiving device 130 includes a first PDA 131 and a first control circuit 132, wherein the first PDA 131 receives light signals from a first LED 120, and the first control circuit 132 drives MOSFETs 161 and 162. In the first semiconductor relay 100, the gates (G) of MOSFETs 161 and 162 are electrically connected to the first control circuit 132 via metal lines 600. The drains (D) of MOSFETs 161 and 162 are electrically connected to chip pads 460 and 470, respectively, via conductive adhesive materials. These chip pads 460 and 470 are separate chip pads. Specifically, the conductive adhesive material bonds the lower surfaces of MOSFETs 161 and 162 to the upper surfaces of the chip pads formed by lead frames. In addition, the sources (S) of MOSFET 161 and MOSFET 162 are connected to the chip pad 140 on which the first light-receiving device 130 is mounted via metal line 600, thereby being electrically connected to the first control circuit 132.

[0132] The second semiconductor relay 200 includes a second light-receiving device 230. The second light-receiving device 230 includes a second PDA 231 and a second control circuit 232, wherein the second PDA 231 receives light signals from the second LED 220, and the second control circuit 232 drives MOSFETs 261 and 262. In the second semiconductor relay 200, the gates (G) of MOSFETs 261 and 262 are electrically connected to the second control circuit 232 via metal lines 600. The drains (D) of MOSFETs 261 and 262 are electrically connected to chip pads 480 and 490, respectively, via conductive bonding materials. Chip pads 480 and 490 are separate chip pads. Specifically, the conductive bonding material bonds the lower surfaces of MOSFETs 261 and 262 to the upper surfaces of the chip pads formed by the lead frame. In addition, the sources (S) of MOSFET 261 and MOSFET 262 are connected to the chip pad 240 on which the second light-receiving device 230 is mounted via metal line 600, thereby being electrically connected to the second control circuit 232.

[0133] By configuring the first semiconductor relay 100 and the second semiconductor relay 200 in this way, from the perspective of the intermediate potential between the first output terminal 410 and the second output terminal 420, such as the output connection line 450, the first switching section 150 and the second switching section 250 form a symmetrical circuit. Therefore, regardless of whether the load connected between the first output terminal 410 and the second output terminal 420 is a DC output or an AC output, the semiconductor relay module 1000 can be used as a relay switch with input and output isolation.

[0134] Furthermore, it is easy to electrically connect the first control circuit 132, the source (S) of MOSFET 161, and the source (S) of MOSFET 162. Similarly, it is easy to electrically connect the second control circuit 232, the source (S) of MOSFET 261, and the source (S) of MOSFET 262.

[0135] Furthermore, the drains (D) of the first to fourth MOSFETs 161, 162, 261, and 262 are connected to chip pads 460, 470, 480, and 490, respectively. This allows for easy heat dissipation from the first to fourth MOSFETs 161, 162, 261, and 262 via chip pads 460, 470, 480, and 490 during operation of the semiconductor relay module 1000. Consequently, the semiconductor relay module 1000 operates stably and its reliability is improved.

[0136] In addition, as mentioned above, the first semiconductor relay 100 and the second semiconductor relay 200 may each include more than three MOSFETs.

[0137] In this case, the connection relationship between the MOSFET and the chip pads is specified as shown below, so that the semiconductor relay module 1000 can be used regardless of whether the load connected between the first output terminal 410 and the second output terminal 420 is a DC output or an AC output.

[0138] In other words, in the first semiconductor relay 100, the gates (G) of multiple MOSFETs are electrically connected to the first control circuit 132 via metal lines 600. The drains (D) of multiple MOSFETs are electrically connected to separate chip pads via conductive adhesive material. In addition, the sources (S) of multiple MOSFETs are connected to the chip pad 140 on which the first light-receiving device 130 is mounted via metal lines 600, thereby being electrically connected to the first control circuit 132.

[0139] In the second semiconductor relay 200, the gates (G) of multiple MOSFETs are electrically connected to the second control circuit 232 via metal lines 600. The drains (D) of multiple MOSFETs are electrically connected to separate chip pads via conductive adhesive material. Additionally, the sources (S) of multiple MOSFETs are connected to the chip pad 240 on which the second light-receiving device 230 is mounted via metal lines 600, thereby electrically connecting to the second control circuit 232.

[0140] Furthermore, as described above, the first control circuit 132 is a charging and discharging circuit for the gates (G) of MOSFETs 161 and 162 respectively. The second control circuit 232 is a charging and discharging circuit for the gates (G) of MOSFETs 261 and 262 respectively. Although not shown, the first control circuit 132 and the second control circuit 232 can be configured with various circuit structures. For example, the first control circuit 132 and the second control circuit 232 can be configured using a D-MOSFET (depletion-type MOSFET; not shown) and a resistor (not shown) connecting the gate (G) and source (S) of the D-MOSFET. Alternatively, the first control circuit 132 and the second control circuit 232 can be configured using only resistors with specified resistance values.

[0141] <Variation Example 1>

[0142] Figure 8 A top view of the semiconductor relay module 1000 involved in Modification 1 is shown. Furthermore, in Figure 8In the accompanying drawings shown thereafter, the same reference numerals are used for the same parts as in Embodiment 1, and detailed descriptions are omitted.

[0143] Figure 8 The structure of this modified example shown is similar to Figure 1B The difference in the structure of Embodiment 1 shown is that the input connection line 351 and the output connection line 451 extend along the Y direction and are arranged across the first light-transmitting part 521, the second light-transmitting part 522 and the light-shielding part 510.

[0144] For example, such as Figure 8 As shown, input connection line 351 extends from the bend of the third input terminal 330 toward the fourth input terminal 340 and is connected to the fourth input terminal 340. Output connection line 451 extends from the central portion of the chip pad 470 in the X direction toward the chip pad 480 and is connected to the central portion of the chip pad 480 in the X direction.

[0145] In this modified example, the same effects as those achieved by the structure shown in Embodiment 1 can be achieved. That is, the first semiconductor relay 100 and the second semiconductor relay 200 can operate independently and can be checked independently. In addition, high withstand voltage can be achieved between the first output terminal 410 and the second output terminal 420. Furthermore, by making the height of the bottom surface of the housing 500 the same between the output connection line 451 and the chip pads 470 and 480, it is easy to prevent the light signals emitted from the first LED 120 and the second LED 220 from being diffusely reflected by the output connection line 451.

[0146] <Variation Example 2>

[0147] Figure 9 A top view of the semiconductor relay module 1000 involved in Modified Example 2 is shown.

[0148] Figure 9 The structure of this modified example shown is similar to Figure 1B The difference in the structure of Embodiment 1 shown is that the output connection line 452 is made of metal wire 600. Additionally, compared to... Figure 1B The difference in the structure of Embodiment 1 shown is that the metal line 600 is arranged across the first light-transmitting part 521, the second light-transmitting part 522 and the light-shielding part 510 to connect the chip pad 470 and the chip pad 480.

[0149] In this modified example, the same effects as those achieved by the structure shown in Embodiment 1 can be achieved. That is, the first semiconductor relay 100 and the second semiconductor relay 200 can operate independently and can be checked independently. In addition, high withstand voltage can be achieved between the first output terminal 410 and the second output terminal 420.

[0150] Furthermore, the number or thickness of the metal wires 600 constituting the output connection line 452 can be appropriately changed according to the magnitude of the output current flowing through the first switch section 150 and the second switch section 250.

[0151] (Variation Example 3)

[0152] Figure 10A A perspective view of the semiconductor relay module 1000 involved in Modification Example 3 is shown. Figure 10B A top view is shown.

[0153] Figure 10A , Figure 10B The structure of this modified example shown is similar to Figure 8 The difference in the structure of the modified example 1 shown is that the intermediate terminal 440 is provided extending from the middle of the output connection line 451 toward the outside of the housing 500. Furthermore, as in... Figure 10A , Figure 10B As shown in the dashed circle, the intermediate terminal 440 differs from the first output terminal 410 and the second output terminal 420 in that the downward-facing portion of the exterior of the housing 500 is removed. Therefore, when the semiconductor relay module 1000 of this modified example is mounted on a mounting substrate (not shown), the intermediate terminal 440 is not connected to the mounting substrate and does not contribute to the electrical operation of the semiconductor relay module 1000.

[0154] In this modified example, the same effects as those achieved by the structure shown in Embodiment 1 can be achieved. That is, the first semiconductor relay 100 and the second semiconductor relay 200 can operate independently and can be checked independently. In addition, high withstand voltage can be achieved between the first output terminal 410 and the second output terminal 420.

[0155] Alternatively, as shown in this modified example, an intermediate terminal 440 that does not contribute to the operation of the semiconductor relay module 1000 may also be provided. Furthermore, by providing the intermediate terminal 440 extending from the output connection line 451 to the outside of the housing 500, the bonding strength between the housing 500 and the output connection line 451 can be improved, thereby improving the bonding strength between the housing 500 and the chip pads 470 and 480.

[0156] (Implementation Method 2)

[0157] Figure 11 This is a top view of the semiconductor relay module 1000 according to Embodiment 2.

[0158] Figure 11 The structure of this embodiment shown is similar to Figures 1A-1C The difference in the structure of Embodiment 1 shown is that there are three input terminals. Specifically, in Figure 11 The structure shown omits Figure 1B The fourth input terminal 340 is shown. That is, the semiconductor relay module 1000 has a third input terminal 330 that is connected to the input connection line 350 and exposed from the housing 500. Furthermore, the third input terminal 330 is connected to an internal terminal 341 inside the housing 500 via the input connection line 350. The other end of a metal wire 600, one end of which is connected to the anode of the second LED 220, is connected to the internal terminal 341.

[0159] In this embodiment, the same effects as those achieved by the structure shown in Embodiment 1 can be achieved. First, voltages are applied separately between the first input terminal 310 and the third input terminal 330, and between the third input terminal 330 and the second input terminal 320, thereby enabling the first LED 120 and the second LED 220, and consequently the first optocoupler 110 and the second optocoupler 210, to operate independently. This allows the first semiconductor relay 100 and the second semiconductor relay 200 to operate independently, and to be inspected independently.

[0160] Furthermore, since no inspection terminals as disclosed in Patent Document 2 are provided between the output terminals, the insulation distance between the first output terminal 410 and the second output terminal 420 can be ensured, and high withstand voltage between the first output terminal 410 and the second output terminal 420 can be achieved.

[0161] Furthermore, a first to a fourth MOSFET 161, 162, 261, and 262 are connected in series between the first output terminal 410 and the second output terminal 420. MOSFET 161 in the first semiconductor relay 100 and MOSFET 261 in the second semiconductor relay 200 are arranged with their source and drain orientations in the same direction. Similarly, MOSFET 162 in the first semiconductor relay 100 and MOSFET 262 in the second semiconductor relay 200 are arranged with their source and drain orientations in the same direction.

[0162] This improves the withstand voltage between the output terminals.

[0163] <Variation Example 4>

[0164] Figure 12 A top view of the semiconductor relay module involved in Variation Example 4 is shown.

[0165] Figure 12 The structure of this modified example shown is similar to Figure 11 The difference in the structure of Embodiment 2 shown is that a light-transmitting portion 523 is provided across the first semiconductor relay 100 and the second semiconductor relay 200. The light-transmitting portion 523 is configured to cover the first optical coupling portion 110, the second optical coupling portion 210, the first switching portion 150, and the second switching portion 250.

[0166] In addition, with Figure 11 The difference in the structure of Embodiment 2 shown is that the input connection line 351 and the output connection line 451 each extend along the Y direction and are disposed inside the light-transmitting portion 523. Furthermore, the third input terminal 330 is connected to the internal terminal 341 inside the housing 500 via the input connection line 351. The other end of a metal wire 600, one end of which is connected to the anode of the second LED 220, is connected to the internal terminal 341.

[0167] In this modified example, the same effects as those achieved by the structure shown in Embodiment 2 can be achieved. That is, the first semiconductor relay 100 and the second semiconductor relay 200 can operate independently and can be checked independently. In addition, high withstand voltage can be achieved between the first output terminal 410 and the second output terminal 420.

[0168] Alternatively, the light-transmitting portion 523 can be provided across the first semiconductor relay 100 and the second semiconductor relay 200, as shown in this modified example. However, when the light-shielding portion 510 is provided between the first light-transmitting portion 521 and the second light-transmitting portion 522 to allow one of the first semiconductor relay 100 and the second semiconductor relay 200 to operate independently, as shown in Embodiment 1, it is possible to suppress malfunctions of the other relay, thereby ensuring the inspection accuracy when the first semiconductor relay 100 and the second semiconductor relay 200 are inspected independently.

[0169] <Variation Example 5>

[0170] Figure 13 A circuit diagram of the semiconductor relay module 1000 according to Modification 5 is shown. Furthermore, structures identical to those in the above embodiments are labeled with the same reference numerals, and descriptions are omitted.

[0171] In the above embodiment, there are two semiconductor relays (first semiconductor relay 100 and second semiconductor relay 200), but in the semiconductor relay module involved in Variation 5, there are three semiconductor relays (first semiconductor relay 100, third semiconductor relay 800, and second semiconductor relay 200). The first semiconductor relay 100, the third semiconductor relay 800, and the second semiconductor relay 200 are arranged side by side in sequence along one direction.

[0172] In the above embodiment, one input connection line 350 is provided. On the other hand, in Modification 5, a third semiconductor relay 800 is also provided, therefore... Figure 13 Two input connection cables, 350A and 350B, are set up as shown.

[0173] The same applies to the output connection line 450. In the above embodiment, one output connection line 450 is provided, but in variation 5, such as... Figure 13 Two output connection cables, 450A and 450B, are set up as shown.

[0174] Similar to the first semiconductor relay 100 and the second semiconductor relay 200, the third semiconductor relay 800 is connected to two input terminals (input terminal 860 and input terminal 870).

[0175] Similar to the first semiconductor relay 100 and the second semiconductor relay 200, the third semiconductor relay 800 includes a third optical coupling section 810, a third switching section 850, and a third control circuit 832. The third optical coupling section 810 includes a third LED 820 and a third light-receiving device 830 that receives the light signal from the third LED 820. The third switching section 850 includes MOSFETs 861 and 862. The third light-receiving device 830 includes a third PDA (third light-receiving element) 831. MOSFETs 861 and 862 respectively open and close the first output terminal and the second output terminal according to the output signal of the third light-receiving device 830.

[0176] Furthermore, while three semiconductor relays are provided in Modification 5, two or more semiconductor relays may also be provided between the first semiconductor relay 100 and the second semiconductor relay 200. That is, the number of semiconductor relays is not limited to two or three, but may also be four or more. The number of input connection lines 350 and output connection lines 450 needs to be appropriately changed according to the number of semiconductor relays.

[0177] (Other implementation methods)

[0178] New embodiments can also be constructed by appropriately combining the constituent elements shown in Embodiments 1, 2, and Variations 1 to 5. For example, it is also possible to... Figure 11 In the structure of Embodiment 2 shown, an intermediate terminal 440 is provided that is connected to the output connection line 451 and exposed from the housing 500, as shown in Modification 3.

[0179] Furthermore, the metal wire 600 shown in this application specification is gold wire, but other materials can also be used as needed. For example, aluminum wire or copper wire can also be used.

[0180] Industrial availability

[0181] The semiconductor relay module disclosed herein is useful because it can independently inspect the multiple semiconductor relays included within it and can achieve high withstand voltage between the output terminals.

[0182] Explanation of reference numerals in the attached figures

[0183] 100: First semiconductor relay; 110: First optical coupling unit; 120: First LED (first light-emitting element); 130: First light-receiving device; 131: First PDA (first light-receiving element); 132: First control circuit; 140: Chip pad; 150: First switching unit; 161: MOSFET; 162: MOSFET; 200: Second semiconductor relay; 210: Second optical coupling unit; 220: Second LED (second light-emitting element); 230: Second light-receiving device; 231: Second PDA (second light-receiving element); 232: Second control circuit; 240: Chip pad; 250: Second switch section; 261: MOSFET; 262: MOSFET; 310: First input terminal; 320: Second input terminal; 330: Third input terminal; 340: Fourth input terminal; 341: Internal terminal; 350, 350A, 350B: Input connection lines; 360, 370: Chip pads; 410: First Output terminals; 420: Second output terminal; 430: Intermediate terminal; 440: Intermediate terminal; 450, 450A, 450B: Output connection lines; 450a: First part; 451: Output connection line; 452: Output connection line; 460, 470, 480, 490: Chip pads; 500: Housing; 510: Light-shielding part; 521: First light-transmitting part; 522: Second light-transmitting part; 523: Light-transmitting part; 600: Metal wire; 700: Lead frame; 710: Primary current guide bar; 800: Third semiconductor relay; 810: Third optical coupling unit; 820: Third LED (third light-emitting element); 830: Third light-receiving device; 831: Third PDA (third light-receiving element); 832: Third control circuit; 850: Third switching unit; 860, 870: Input terminals; 861: MOSFET; 862: MOSFET; 1000, 1100, 1200: Semiconductor relay module; 2100, 2200: Power supply.

Claims

1. A semiconductor relay module, comprising: First semiconductor relay; Second semiconductor relay; The housing covers the first semiconductor relay and the second semiconductor relay; The first input terminal exposed from the housing; The second input terminal exposed from the housing; The first output terminal exposed from the housing; The second output terminal exposed from the housing; The third input terminal is exposed from the housing; The input connection line is covered by the housing; as well as The output connection line is covered by the housing. The first semiconductor relay has: A first optical coupling unit, comprising a first light-emitting element and a first light-receiving device for receiving light signals from the first light-emitting element; and The first switching section includes a first MOS-type field-effect transistor, i.e., a first MOSFET. The first MOSFET closes or opens the connection between the first output terminal and the second output terminal of the first semiconductor relay based on the output signal of the first light-receiving device. The second semiconductor relay has: The second optical coupling part has a second light-emitting element and a second light-receiving device for receiving the light signal from the second light-emitting element; as well as The second switching section includes a second MOS-type field-effect transistor, i.e., a second MOSFET. The second MOSFET closes or opens the connection between the first output terminal and the second output terminal of the second semiconductor relay based on the output signal of the second light-receiving device. The first input terminal is connected to the anode of the first light-emitting element. The second input terminal is connected to the cathode of the second light-emitting element. The cathode of the first light-emitting element of the first semiconductor relay and the anode of the second light-emitting element of the second semiconductor relay are connected via the input connection line. The first output terminal is connected to the first output terminal of the first semiconductor relay. The second output terminal is connected to the second output terminal of the second semiconductor relay. The second output terminal of the first semiconductor relay is connected to the first output terminal of the second semiconductor relay via the output connection line. The third input terminal is connected to the input connection line.

2. The semiconductor relay module according to claim 1, characterized in that, It also includes a light-shielding part, which is used to block the light signal emitted from the first light-emitting element and the light signal emitted from the second light-emitting element. The light-shielding part is formed of light-shielding resin. The light-shielding part is disposed between the first optical coupling part of the first semiconductor relay and the second optical coupling part of the second semiconductor relay.

3. The semiconductor relay module according to claim 1 or 2, characterized in that, The output connection lines are all covered by the housing.

4. The semiconductor relay module according to claim 1 or 2, characterized in that, The first semiconductor relay and the second semiconductor relay are arranged side by side. The output connection line is arranged adjacent to the first semiconductor relay and the second semiconductor relay in such a way that it is separated from the first light-transmitting part provided in the first optical coupling part and the second light-transmitting part provided in the second optical coupling part.

5. The semiconductor relay module according to claim 1 or 2, characterized in that, The first semiconductor relay and the second semiconductor relay are arranged side by side. The input connection line is arranged adjacent to the first semiconductor relay and the second semiconductor relay in such a way that it is separated from the first light-transmitting part provided in the first optical coupling part and the second light-transmitting part provided in the second optical coupling part.

6. The semiconductor relay module according to claim 4, characterized in that, The first semiconductor relay and the second semiconductor relay are configured between the input connection line and the output connection line.

7. The semiconductor relay module according to claim 1 or 2, characterized in that, The first semiconductor relay also has a third MOS-type field-effect transistor, namely a third MOSFET. The second semiconductor relay also has a fourth MOS-type field-effect transistor, namely a fourth MOSFET. At least one of the first MOSFET and the third MOSFET is configured in the same manner as at least one of the second MOSFET and the fourth MOSFET, with the source and drain orientations being the same.

8. The semiconductor relay module according to claim 7, characterized in that, The first MOSFET and the third MOSFET are electrically connected in series. The source of the first MOSFET is electrically connected to the source of the third MOSFET. The second MOSFET and the fourth MOSFET are electrically connected in series. The source of the second MOSFET is electrically connected to the source of the fourth MOSFET.

9. The semiconductor relay module according to claim 7, characterized in that, It also has: The first chip pad, on which the first MOSFET is mounted; The second chip pad, on which the second MOSFET is mounted; The third chip pad, on which the third MOSFET is mounted; The fourth chip pad, on which the fourth MOSFET is mounted; The first light-receiving device is mounted on the fifth chip pad; as well as The second light-receiving device is mounted on the sixth chip pad. The first light-receiving device includes: A first light-receiving element receives the light signal from the first light-emitting element; and A first control circuit drives the first MOSFET and the third MOSFET. The second light-receiving device includes: The second light-receiving element receives the light signal from the second light-emitting element; and A second control circuit drives the second MOSFET and the fourth MOSFET. The gates of the first MOSFET and the third MOSFET are electrically connected to the first control circuit. The drain of the first MOSFET is electrically connected to the pad of the first chip. The drain of the third MOSFET is electrically connected to the pad of the third chip. The source of the first MOSFET and the source of the third MOSFET are electrically connected to the pad of the fifth chip. The gates of the second MOSFET and the fourth MOSFET are electrically connected to the second control circuit. The drain of the second MOSFET is electrically connected to the pad of the second chip. The drain of the fourth MOSFET is electrically connected to the fourth chip pad. The source of the second MOSFET and the source of the fourth MOSFET are electrically connected to the sixth chip pad.

10. The semiconductor relay module according to claim 4, characterized in that, The first light-transmitting part and the second light-transmitting part are formed as one unit.

11. A semiconductor relay module, comprising: Multiple semiconductor relays arranged side by side in one direction; The first input terminal exposed from the housing; The second input terminal exposed from the housing; The third input terminal is exposed from the housing; The first output terminal exposed from the housing; The second output terminal exposed from the housing; The input connection line is covered by the housing; as well as The output connection line is covered by the housing. The plurality of semiconductor relays includes a first semiconductor relay disposed at one end, a second semiconductor relay disposed at the other end, and a third semiconductor relay disposed between the first semiconductor relay and the second semiconductor relay and adjacent to the first semiconductor relay. The first semiconductor relay has: A first optical coupling unit, comprising a first light-emitting element and a first light-receiving device for receiving light signals from the first light-emitting element; and The first switching section includes a first MOS-type field-effect transistor, i.e., a first MOSFET. The first MOSFET closes or opens the connection between the first output terminal and the second output terminal of the first semiconductor relay based on the output signal of the first light-receiving device. The second semiconductor relay has: The second optical coupling section includes a second light-emitting element and a second light-receiving device for receiving light signals from the second light-emitting element; and The second switching section includes a second MOS-type field-effect transistor, i.e., a second MOSFET. The second MOSFET closes or opens the connection between the first output terminal and the second output terminal of the second semiconductor relay based on the output signal of the second light-receiving device. The third semiconductor relay has: A third optical coupling unit, comprising a third light-emitting element and a third light-receiving device for receiving the light signal from the third light-emitting element; and The third switching section includes a third MOS-type field-effect transistor, i.e., a third MOSFET. The third MOSFET closes or opens the connection between the first output terminal and the second output terminal of the third semiconductor relay based on the output signal of the third light-receiving device. The first input terminal is connected to the anode of the first light-emitting element. The second input terminal is connected to the cathode of the second light-emitting element. The cathode of the first light-emitting element of the first semiconductor relay and the anode of the third light-emitting element of the third semiconductor relay are connected via the input connection line. The first output terminal is connected to the first output terminal of the first semiconductor relay. The second output terminal is connected to the second output terminal of the second semiconductor relay. The second output terminal of the first semiconductor relay and the first output terminal of the third semiconductor relay are connected via the output connection line. The third input terminal is connected to the input connection line.

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