A method and apparatus for characterizing electric field perturbations based on scanning probe microscopy

Abstract

This invention provides a method and apparatus for characterizing electric field disturbances based on scanning probe microscopy. It utilizes scanning probe microscopy, an external power supply, and Matlab to characterize the potential distribution of cross-sectional samples under different voltages in situ. The surface electric field distribution and electric field disturbance results are obtained through further formula calculations and data plotting. This is a new technology with high spatial resolution that can intuitively characterize the electric field disturbances of energy storage dielectrics, which is of great significance for understanding the breakdown failure mechanism of energy storage dielectrics.

Description

Technical Field

[0001] This invention relates to the field of dielectric material property testing technology, and more specifically to a method and apparatus for characterizing electric field disturbances based on scanning probe microscopy. Background Technology

[0002] High-speed charging and discharging dielectric capacitors with high power density play a crucial role in power systems and pulse power supplies. In recent years, the development of high-power-density energy storage dielectrics has faced numerous challenges due to the increasing demands for high integration, miniaturization, lightweighting, and high power in electronic devices. For example, the poor breakdown resistance of traditional ceramic materials and the low dielectric constant of polymer materials limit the improvement of their energy storage density. Therefore, the search for novel high-energy-density dielectric materials has become a forward-looking research topic in the fields of energy storage, information functional materials, and microelectronics. High-energy-density polymer composite dielectric materials have become a hot topic in academia and industry due to their advantages such as simple processing, low cost, easy compatibility with flexible substrates, and suitability for large-area production.

[0003] According to the definition of energy storage density of dielectric materials (Formula 1), the energy density of a dielectric material mainly depends on the electric field strength E and the electric displacement vector D. For a general linear dielectric material, the energy storage density U... e This can be simplified to Formula 2, where ε0 and ε r These are the dielectric constants of vacuum and the dielectric material, E, respectively. B It is the dielectric breakdown strength.

[0004]

[0005]

[0006] For energy storage dielectric materials, breakdown strength is one of the most important performance indicators, significantly affecting the energy storage density. However, due to a lack of understanding of the breakdown mechanism, it is difficult to significantly improve the breakdown strength to enhance breakdown performance. Therefore, understanding the breakdown mechanism of dielectric materials is crucial for the development of energy storage dielectric materials. Currently, dielectric breakdown is often calculated based on the Weibull distribution equation, using the statistical distribution of breakdown voltage to determine the characteristic breakdown strength. Under external field conditions, the inhomogeneity of the internal electric field of the material has a significant impact on its breakdown. Although finite element simulation and phase field simulation can be applied to dielectric materials to analyze their local electric field distribution, direct experimental observation is more helpful in deepening the understanding of the structure-property relationship and breakdown. Among these methods, pulsed electroacoustics and pressure waves can be used to directly observe the space charge and electric field distribution of dielectrics, but these methods lack spatial resolution for nanocomposite dielectric materials, making it difficult to observe electric field perturbations at the nanoscale. Therefore, developing micro- and nano-scale electric field perturbation methods will help to intuitively understand the dielectric breakdown mechanism.

[0007] Scanning probe microscopy (SPM) is widely used to characterize the microscopic local properties of materials due to its high spatial resolution. It can simultaneously measure the material's morphology and surface potential signal, thus reflecting differences in local electrical properties. However, existing SPM techniques can only reflect microscopic potential differences and cannot reflect information about electric field perturbations. Therefore, further design and optimization of the equipment and characterization methods are needed to provide a characterization method based on the local properties of SPM, thereby obtaining information about perturbations in the material's microscopic electric field. Summary of the Invention

[0008] The present invention aims to at least partially solve one of the technical problems in the related art.

[0009] Therefore, one objective of this invention is to develop an electric field perturbation characterization method based on scanning probe microscopy. This method can obtain electric field perturbations under different electric fields by in-situ characterizing the electric field distribution on the surface of dielectric materials. This method has the advantages of in-situ, high spatial resolution, and intuitive results, and is of great significance for understanding the breakdown failure mechanism of energy storage dielectrics.

[0010] Another objective of this invention is to provide an electric field perturbation characterization device based on a scanning probe microscope.

[0011] To achieve the above objectives, one embodiment of the present invention proposes a method for characterizing electric field perturbations based on scanning probe microscopy, comprising the following steps: preparing a dielectric sample capable of being subjected to an in-situ electric field, and obtaining a microscopic morphology image of the dielectric sample to obtain the local structural characteristics of the dielectric material; selecting a probe test area using scanning probe microscopy based on the local structural characteristics of the dielectric material; obtaining surface potential distribution information of the dielectric sample under various applied voltage states and plotting potential distribution images using Kelvin probe microscopy in the probe test area; differentiating the potential distribution image data along the direction perpendicular to the electrode to obtain an electric field distribution image, and denoising the electric field distribution image to obtain a denoised electric field distribution image; and then calculating the second moment of the obtained denoised electric field distribution image data to obtain a graph showing the change of electric field perturbation with the average electric field.

[0012] The electric field perturbation characterization method based on scanning probe microscopy of this invention uses scanning probe microscopy, external power supply and Matlab to characterize the potential distribution of cross-sectional samples under different voltages in situ, and obtains the surface electric field distribution and electric field perturbation results through further formula calculation, data plotting and other methods. It has high spatial resolution and can intuitively characterize the electric field perturbation of energy storage dielectric.

[0013] In addition, the electric field perturbation characterization method based on scanning probe microscopy according to the above embodiments of the present invention may also have the following additional technical features:

[0014] Furthermore, in one embodiment of the present invention, the preparation of a dielectric sample capable of being loaded with an electric field in situ further includes: slicing the dielectric sample and fixing it in a fixture with the cross-section facing upwards; the dielectric sample includes a pure-phase dielectric sample and a nanocomposite dielectric sample.

[0015] Further, in one embodiment of the present invention, in the probe test area, the surface potential distribution information of the dielectric sample under various applied voltage states is obtained and a potential distribution image is plotted using a Kelvin probe microscope. This further includes: using a Kelvin probe microscope to obtain the surface potential distribution information of the dielectric sample in the probe test area without an external electric field; applying a voltage to both sides of the dielectric sample cross-section using an external power supply, wherein the electric field of the applied voltage is perpendicular to the two electrodes, characterizing the surface potential distribution information of the dielectric sample under an applied electric field; extracting and statistically analyzing the surface potential distribution information under various applied voltage states, and plotting the potential distribution image.

[0016] Furthermore, in one embodiment of the present invention, the potential distribution image data is differentiated along the direction perpendicular to the electrode, and the electric field distribution image is denoised to obtain a denoised electric field distribution image. This further includes: using Matlab software to differentiate the potential distribution map along the direction of the applied electric field, i.e., perpendicular to the electrode direction, to obtain a distribution map of the electric field along the direction perpendicular to the electrode, as shown in the following formula:

[0017] ,

[0018] Where V(x,y) is the surface potential and x is the distance of the point along the direction perpendicular to the electrode; the electric field distribution image is filtered using Matlab software and smoothed for rows that deviate too much from the average electric field to obtain the denoised electric field distribution image.

[0019] Furthermore, in one embodiment of the present invention, the second moment of the obtained denoised electric field distribution image data is calculated to obtain the electric field perturbation value. This further includes: calculating the second moment of the electric field distribution image data of the probe's test area according to the following formula, obtaining the electric field perturbation data through calculation, and plotting the electric field perturbation as a function of the average electric field.

[0020]

[0021] in, For the average electric field, Let ΔE be the second moment of the electric field data. x This is an electric field disturbance.

[0022] To achieve the above objectives, another embodiment of the present invention proposes an electric field perturbation characterization device based on scanning probe microscopy. The device includes: a preparation and acquisition module for preparing a dielectric sample that can be subjected to an in-situ electric field and acquiring a microscopic morphology image of the dielectric sample to obtain the local structural characteristics of the dielectric material; a region selection module for selecting a probe test area based on the local structural characteristics of the dielectric material using a scanning probe microscope; an information acquisition module for acquiring surface potential distribution information of the dielectric sample under various applied voltage states and plotting a potential distribution image in the probe test area using a Kelvin probe microscope; and a data processing module for differentiating the potential distribution image data along the direction perpendicular to the electrode to obtain an electric field distribution image, denoising the electric field distribution image to obtain a denoised electric field distribution image, and calculating the second moment of the denoised electric field distribution image data to obtain a graph showing the change of electric field perturbation with the average electric field.

[0023] The electric field perturbation characterization device based on scanning probe microscopy of this invention utilizes scanning probe microscopy, an external power supply, and Matlab to characterize the potential distribution of cross-sectional samples under different voltages in situ. The surface electric field distribution and electric field perturbation results are obtained through further formula calculations and data plotting. It has the advantages of high spatial resolution and the ability to intuitively characterize the electric field perturbation of energy storage dielectrics.

[0024] Furthermore, in one embodiment of the present invention, the preparation and acquisition module is specifically used to: slice the dielectric sample and fix it in a fixture with the cross-section facing upward.

[0025] Furthermore, in one embodiment of the present invention, the region selection module is specifically used to: set the scanning mode of the scanning probe microscope, use it to scan the cross-sectional region of the dielectric sample, obtain the morphological image of the cross-sectional region, and select the probe test area.

[0026] Furthermore, in one embodiment of the present invention, the information acquisition module is specifically used for: setting a Kelvin probe microscope scanning mode, scanning and acquiring the surface potential distribution information of the dielectric sample when there is no external electric field in the probe test area; applying a voltage to both sides of the cross-section of the dielectric sample using an external power supply, wherein the electric field of the voltage applied by the external power supply is perpendicular to the electrodes on both sides, characterizing the surface potential distribution information of the dielectric sample under the condition of an external electric field; extracting and statistically analyzing the surface potential distribution information under various applied voltage conditions, and plotting the potential distribution image.

[0027] Furthermore, in one embodiment of the present invention, the data processing module is specifically used to: obtain a distribution map of the electric field along the direction perpendicular to the electrode by differentiating the potential distribution map along the direction of the applied electric field, i.e., perpendicular to the electrode direction, using Matlab software, as shown in the following formula:

[0028] ,

[0029] Where V(x,y) is the surface potential, and x is the distance of the point along the direction perpendicular to the electrode;

[0030] The electric field distribution image was filtered using Matlab software, and rows that deviated too much from the average electric field were smoothed to obtain a denoised electric field distribution image.

[0031] The second moment of the electric field distribution image data of the probe's test area is obtained according to the following formula. The electric field perturbation data is then calculated, and a graph showing the electric field perturbation as a function of the average electric field is plotted.

[0032]

[0033] in, For the average electric field, Let ΔE be the second moment of the electric field data. x This is an electric field disturbance.

[0034] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.

[0035] Beneficial effects

[0036] Compared with the prior art, the present invention has the following beneficial effects:

[0037] This invention is a method for characterizing electric field disturbances in energy storage dielectrics. It can observe electric field disturbances in nanocomposite dielectric materials at the nanoscale. Using an external power source, it can characterize the electric field disturbances of energy storage dielectrics in situ under different applied electric fields. It has the advantages of in situ, high spatial resolution, and intuitive results, and is of great significance for understanding the breakdown failure mechanism of energy storage dielectrics. Attached Figure Description

[0038] To illustrate the content of this invention, a brief description of the embodiments will be provided below with reference to the accompanying drawings. The drawings are merely some embodiments of this invention, wherein:

[0039] Figure 1 This is a flowchart of an embodiment of the electric field perturbation characterization method based on scanning probe microscopy of the present invention;

[0040] Figure 2 This is a schematic diagram of a cross-sectional sample and its placement according to an embodiment of the present invention;

[0041] Figure 3 This is a circuit diagram of the scanning probe for in-situ characterization of cross-sectional samples and a schematic diagram of the acquisition of morphological and potential information.

[0042] Figure 4 The image shows the electric field distribution obtained from the cross-sectional potential diagram of a nanocomposite dielectric thin film constructed according to an example of the present invention.

[0043] Figure 5 This is the relationship between the electric field perturbation and the average electric field of the nanocomposite dielectric thin film constructed according to an example of the present invention.

[0044] Figure 6 This is a schematic diagram of the structure of an electric field perturbation characterization device based on a scanning probe microscope according to an embodiment of the present invention. Detailed Implementation

[0045] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0046] The electric field disturbance characterization method and apparatus based on scanning probe microscopy according to embodiments of the present invention will be described below with reference to the accompanying drawings. First, the electric field disturbance characterization method based on scanning probe microscopy according to embodiments of the present invention will be described with reference to the accompanying drawings.

[0047] Figure 1 This is a flowchart of an embodiment of the electric field perturbation characterization method based on scanning probe microscopy according to the present invention.

[0048] like Figure 1 As shown, this method for characterizing electric field perturbations based on scanning probe microscopy includes the following steps:

[0049] In step S101, a dielectric sample that can be subjected to an electric field in situ is prepared, and a microstructure image of the dielectric sample is obtained to obtain the local structural characteristics of the dielectric material.

[0050] In one embodiment of the present invention, the preparation of a dielectric sample capable of being subjected to an in-situ electric field further includes:

[0051] like Figure 2 As shown, Figure 2 This is a schematic diagram of the cross-sectional sample and sample placement in an embodiment of the present invention. The energy storage dielectric film is embedded in the resin and cured to obtain a sample fixed in the vertical direction. Further, the cross-sectional sample of the energy storage dielectric is prepared by the ultrathin slicing method, and the sample cross-section is fixed in the fixture with the sample cross-section facing upward. In the specific implementation and operation, the dielectric sample is selected as a pure phase dielectric sample and a nanocomposite dielectric sample.

[0052] In step S102, based on the local structural characteristics of the dielectric material, the area to be tested by the probe is selected using a scanning probe microscope. Specifically, for example... Figure 3 As shown, a scanning probe microscope is used to scan the cross-sectional area, obtain cross-sectional topography images, and select the area to be tested.

[0053] In step S103, the surface potential distribution information of the dielectric sample under various applied voltage states is obtained and a potential distribution image is plotted in the probe test area using a Kelvin probe microscope.

[0054] In one embodiment of the present invention, step S103 further includes: using a Kelvin probe microscope to acquire the surface potential distribution information of the dielectric sample when there is no external electric field in the probe test area. In specific operation, such as... Figure 3 As shown, the morphology within the selected area was scanned using Kelvin probe microscopy, and the potential distribution image of the region was scanned simultaneously when the probe was lifted by 50 nm.

[0055] Furthermore, an external power supply is used to apply a voltage to both sides of the dielectric sample cross-section. The electric field of the applied voltage is perpendicular to the electrodes on both sides, characterizing the surface potential distribution of the dielectric sample under an applied electric field. Specifically, a DC voltage is applied through a clamp, with the clamp electrodes connected to the electrode leads of the cross-section sample. Therefore, the voltage can be applied to both sides of the sample under test. Figure 4 As shown, after applying an external electric field to the cross-sectional sample, the cross-sectional morphology was then detected using Kelvin microscopy, and the surface potential of the same region was detected when an external voltage was applied, with the probe raised by 50 nm.

[0056] Furthermore, the surface potential distribution information under various applied voltage conditions is extracted and statistically analyzed, and a potential distribution image is plotted.

[0057] In step S104, the potential distribution image data is differentiated along the direction perpendicular to the electrode to obtain the electric field distribution image, and the electric field distribution image is denoised to obtain a denoised electric field distribution image. Then, the second moment is calculated on the obtained denoised electric field distribution image data to obtain a graph of electric field disturbance as a function of the average electric field.

[0058] In one embodiment of the present invention, step S104 further includes:

[0059] The potential distribution diagram is obtained by differentiating along the direction of the applied electric field, i.e., perpendicular to the electrode direction, using Matlab software. The formula is as follows:

[0060] ,

[0061] Where V(x,y) is the surface potential, and x is the distance of the point along the direction perpendicular to the electrode;

[0062] The electric field distribution image was filtered using Matlab software, and rows that deviated too much from the average electric field were smoothed to obtain a denoised electric field distribution image. Specifically, filtering the electric field distribution image with Matlab was to reduce system noise, and smoothing rows that deviated too much from the average electric field was to reduce data errors caused by skipped needles during system scanning and improve accuracy.

[0063] Furthermore, the second moment is calculated from the electric field distribution image data of the probe's test area according to the following formula. The electric field perturbation data is then obtained through calculation, and a graph showing the electric field perturbation as a function of the average electric field is plotted.

[0064]

[0065] in, For the average electric field, Let ΔE be the second moment of the electric field data. x For electric field disturbances, specifically, such as Figure 5 As shown, the electric field disturbance increases with the increase of the electric field, exhibiting a linear relationship with the electric field. Quantitatively obtained information on the electric field disturbance can be further correlated with the breakdown field strength to understand the impact of internal electric field disturbances on the breakdown of the energy storage dielectric.

[0066] In summary, this invention, based on scanning probe microscopy, designs pure-phase dielectric samples and nanocomposite dielectric samples. The potential distribution of cross-sectional samples under different voltages is characterized in situ using Kelvin probe microscopy, an external power supply, and Matlab. Further calculations and data visualization are used to obtain the surface electric field distribution and electric field perturbation results. This invention has high spatial resolution and can more intuitively characterize the electric field perturbation data of energy storage dielectrics, which is of great significance for understanding the breakdown failure mechanism of energy storage dielectrics.

[0067] Next, with reference to the accompanying drawings, an electric field perturbation characterization device based on a scanning probe microscope according to an embodiment of the present invention is described.

[0068] Figure 6 This is a schematic diagram of the structure of an electric field perturbation characterization device based on a scanning probe microscope according to an embodiment of the present invention.

[0069] like Figure 6 As shown, the electric field disturbance characterization device 10 based on scanning probe microscopy includes: a preparation and acquisition module 100, a region selection module 200, an information acquisition module 300, and a data processing module 400.

[0070] The module includes the following components: Preparation and Acquisition Module 100, used to prepare a dielectric sample that can be subjected to an in-situ electric field, and acquire a microscopic morphology image of the dielectric sample to obtain the local structural characteristics of the dielectric material. Region Selection Module 200, used to select the probe test area using a scanning probe microscope based on the local structural characteristics of the dielectric material. Information Acquisition Module 300, used to acquire the surface potential distribution information of the dielectric sample under various applied voltage states and plot the potential distribution image in the probe test area using a Kelvin probe microscope. Data Processing Module 400, used to differentiate the potential distribution image data along the direction perpendicular to the electrode to obtain an electric field distribution image, and to denoise the electric field distribution image to obtain a denoised electric field distribution image. It also calculates the second moment of the denoised electric field distribution image data to obtain a graph showing the change of electric field perturbation with the average electric field. The device 10 of this invention uses a scanning probe microscope, an external power supply, and Matlab to characterize the potential distribution of a cross-sectional sample under different voltages in situ. The surface electric field distribution and electric field disturbance results are obtained through further formula calculations and data plotting. It has high spatial resolution and can intuitively characterize the electric field disturbance of the energy storage dielectric.

[0071] Furthermore, in one embodiment of the present invention, the preparation and acquisition module 100 is specifically used to: slice the dielectric sample and fix it in a fixture with the cross-section facing upward.

[0072] Furthermore, in one embodiment of the present invention, the region selection module 200 is specifically used to: set the scanning mode of the scanning probe microscope, use it to scan the cross-sectional area of ​​the dielectric sample, obtain the morphological image of the cross-sectional area, and select the probe test area.

[0073] Furthermore, in one embodiment of the present invention, the information acquisition module 300 is specifically used for: setting the Kelvin probe microscope scanning mode, scanning and acquiring the surface potential distribution information of the dielectric sample when there is no external electric field in the probe test area; applying a voltage to both sides of the cross section of the dielectric sample using an external power supply, wherein the electric field of the voltage applied by the external power supply is perpendicular to the electrodes on both sides, characterizing the surface potential distribution information of the dielectric sample under the condition of an external electric field; extracting and statistically analyzing the surface potential distribution information under various applied voltage conditions, and drawing the potential distribution image.

[0074] Furthermore, in one embodiment of the present invention, the data processing module 400 is specifically used to: obtain the electric field distribution map along the direction perpendicular to the electrode by differentiating the potential distribution map along the direction of the applied electric field, i.e., perpendicular to the electrode direction, using Matlab software, as shown in the following formula:

[0075] ,

[0076] Where V(x,y) is the surface potential, and x is the distance of the point along the direction perpendicular to the electrode;

[0077] The electric field distribution image was filtered using Matlab software, and rows that deviated too much from the average electric field were smoothed to obtain a denoised electric field distribution image.

[0078] The second moment of the electric field distribution image data of the probe's test area is obtained according to the following formula. The electric field perturbation data is then calculated, and a graph showing the electric field perturbation as a function of the average electric field is plotted.

[0079]

[0080] in, For the average electric field, Let ΔE be the second moment of the electric field data. x This is an electric field disturbance.

[0081] It should be noted that the foregoing explanation of the embodiment of the electric field perturbation characterization method based on scanning probe microscope also applies to the electric field perturbation characterization device based on scanning probe microscope in this embodiment, and will not be repeated here.

[0082] The electric field perturbation characterization device based on scanning probe microscopy proposed in this embodiment utilizes scanning probe microscopy to design pure-phase dielectric samples and nanocomposite dielectric samples. The potential distribution of the cross-sectional samples under different voltages is characterized in situ using a Kelvin probe microscope, an external power supply, and Matlab. The surface electric field distribution and electric field perturbation results are obtained through further formula calculations and data visualization. This device has high spatial resolution and can more intuitively characterize the electric field perturbation data of energy storage dielectrics, which is of great significance for understanding the breakdown failure mechanism of energy storage dielectrics.

[0083] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0084] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0085] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0086] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A method for characterizing electric field perturbations based on scanning probe microscopy, characterized in that, Includes the following steps: A dielectric sample capable of being loaded with an electric field in situ was prepared, and its microstructure was obtained by scanning probe microscopy to obtain the local structural characteristics of the dielectric material. Based on the local structural characteristics of the dielectric material, the area to be tested by the probe is selected using a scanning probe microscope; In the area to be tested by the probe, the surface potential distribution information of the dielectric sample under various applied voltage states is obtained and potential distribution images are plotted using a Kelvin probe microscope; The potential distribution image data is differentiated along the direction perpendicular to the electrode to obtain the electric field distribution image. The electric field distribution image is then denoised to obtain a denoised electric field distribution image. The second moment is then calculated from the denoised electric field distribution image data to obtain the electric field disturbance of the dielectric material in the measured area.

2. The method for characterizing electric field perturbations based on scanning probe microscopy according to claim 1, characterized in that, The preparation of the dielectric sample capable of being subjected to an in-situ electric field further includes: The dielectric sample is sliced ​​and fixed in a fixture with the cross-section facing upwards. The dielectric sample includes a pure phase dielectric sample and a nanocomposite dielectric sample.

3. The method for characterizing electric field perturbations based on scanning probe microscopy according to claim 1, characterized in that, In the area to be tested by the probe, the surface potential distribution information of the dielectric sample under various applied voltage states is obtained and a potential distribution image is plotted using a Kelvin probe microscope, further including: Using a Kelvin probe microscope, the surface potential distribution information of the dielectric sample when there is no external electric field in the area to be tested by the probe is obtained; A voltage is applied to both sides of the cross-section of the dielectric sample using an external power supply. The electric field applied by the external power supply is perpendicular to the electrodes on both sides, which characterizes the surface potential distribution information of the dielectric sample under the condition of an external electric field. Extract the surface potential distribution information under various applied voltage conditions and plot the potential distribution image.

4. The method for characterizing electric field perturbations based on scanning probe microscopy according to claim 1, characterized in that, The potential distribution image data is differentiated along the direction perpendicular to the electrode, and the electric field distribution image is denoised to obtain a denoised electric field distribution image, further comprising: The potential distribution diagram is obtained by differentiating along the direction of the applied electric field, i.e., perpendicular to the electrode direction, using Matlab software. The formula is as follows: ， Where V(x, y) is the surface potential, and x is the distance of the point along the direction perpendicular to the electrode; The electric field distribution image was filtered using Matlab software, and rows that deviated too much from the average electric field due to the jumper needle were smoothed to obtain a denoised electric field distribution image.

5. The method for characterizing electric field perturbations based on scanning probe microscopy according to claim 4, characterized in that, The second moment is calculated from the denoised electric field distribution image data to obtain the electric field perturbation of the dielectric material in the measured region, further including: The second moment and average electric field are obtained from the electric field distribution image data of the probe's test area. The electric field perturbation data are then calculated using the following formula, and a graph showing the electric field perturbation as a function of the average electric field is plotted. ， in, For the average electric field, The second moment of the electric field data, This is an electric field disturbance.

6. An electric field perturbation characterization device based on a scanning probe microscope, characterized in that, The device includes: The preparation and acquisition module is used to prepare dielectric samples that can be subjected to an electric field in situ, and to obtain the microstructure of the dielectric sample by scanning probe microscopy in order to obtain the local structural characteristics of the dielectric material. The region selection module is used to select the region to be tested by the probe using a scanning probe microscope based on the local structural characteristics of the dielectric material. The information acquisition module is used to obtain the surface potential distribution information of the dielectric sample under various applied voltage states and draw potential distribution images in the probe test area using a Kelvin probe microscope. The data processing module is used to differentiate the potential distribution image data along the direction perpendicular to the electrode to obtain an electric field distribution image, and to perform denoising processing on the electric field distribution image to obtain a denoised electric field distribution image. The module also calculates the second moment of the denoised electric field distribution image data to obtain the electric field disturbance value.

7. The electric field perturbation characterization device based on scanning probe microscopy according to claim 6, characterized in that, The preparation and acquisition module is specifically used to: slice the upper surface of the dielectric sample and retain the cross-sectional sample with a smooth upper surface, and fix it in a fixture with the cross-section facing upwards.

8. The electric field perturbation characterization device based on scanning probe microscopy according to claim 6, characterized in that, The region selection module is specifically used to: set the scanning mode of the scanning probe microscope, use it to scan the cross-sectional region of the dielectric sample, obtain the morphological image of the cross-sectional region, and select the probe test area.

9. The electric field perturbation characterization device based on scanning probe microscopy according to claim 6, characterized in that, The information acquisition module is specifically used for: setting the Kelvin probe microscope scanning mode, scanning and acquiring the surface potential distribution information of the dielectric sample when there is no external electric field in the probe test area; applying a voltage to both sides of the cross section of the dielectric sample using an external power supply, wherein the electric field of the voltage applied by the external power supply is perpendicular to the two electrodes, characterizing the surface potential distribution information of the dielectric sample under the condition of an external electric field; extracting and statistically analyzing the surface potential distribution information under various applied voltage conditions, and plotting the potential distribution image.

10. The electric field perturbation characterization device based on scanning probe microscopy according to claim 6, characterized in that, The data processing module is specifically used to: obtain the electric field distribution map along the direction perpendicular to the electrode by differentiating the potential distribution map along the applied electric field direction using Matlab software, i.e., by differentiating it perpendicular to the electrode direction, as shown in the following formula: ， Where V(x, y) is the surface potential, and x is the distance of the point along the direction perpendicular to the electrode; The electric field distribution image was filtered using Matlab software, and rows that deviated too much from the average electric field were smoothed to obtain a denoised electric field distribution image. The second moment of the electric field distribution image data of the probe's test area is obtained according to the following formula. The electric field perturbation data is then calculated, and a graph showing the electric field perturbation as a function of the average electric field is plotted. ， in, For the average electric field, The second moment of the electric field data, This is an electric field disturbance.

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