A switch cabinet discharge positioning and temperature measuring method based on sparse pixels

Abstract

The disclosure discloses a kind of discharge positioning and temperature measurement methods of switch cabinet based on sparse pixel, comprising: S100: the visible light image of the internal structure of high-voltage switch cabinet is obtained;S200: the discharge light signal of the internal structure of high-voltage switch cabinet is collected;S300: the visible light image is segmented based on avalanche diode array unit, to obtain first image, discharge light signal is focused on first image, to carry out the first positioning of high-voltage switch cabinet internal structure discharge;S400: the visible light image is segmented based on infrared focal plane, to obtain second image, discharge light signal is focused on second image, to carry out the temperature measurement of high-voltage switch cabinet internal structure, and based on temperature value, the second positioning of high-voltage switch cabinet internal structure discharge is carried out;S500: the positioning result of first positioning and second positioning is integrated to carry out the final positioning of high-voltage switch cabinet internal structure discharge.

Description

Technical Field

[0001] This disclosure belongs to the field of partial discharge detection technology in electrical engineering, specifically relating to a method for locating and measuring discharge in switchgear based on sparse pixels. Background Technology

[0002] High-voltage switchgear has a compact internal structure and small insulation margin. Abnormal discharge or overheating can easily develop into short-circuit faults or even explosions, seriously threatening the safety of distribution network operations and personnel. Therefore, effective monitoring of switchgear discharge and overheating is a crucial technical means of fault prevention. However, due to the unknown location of discharges and signal propagation paths within the switchgear, online detection is difficult, making it hard to formulate equipment operation and maintenance decisions, which mainly rely on subjective experience.

[0003] Currently, ultraviolet imagers are widely used in power system fault detection. Although they have high detection accuracy and intuitiveness, the complex structure of CCD imaging systems results in large size and high cost, making them difficult to deploy flexibly inside high-voltage switchgear and even more difficult to promote and apply on a large scale in power systems.

[0004] The information disclosed in the background section is only intended to enhance the understanding of the background of the present invention, and therefore may contain information that does not constitute prior art known to those skilled in the art in this country. Summary of the Invention

[0005] To address the shortcomings of existing technologies, the purpose of this disclosure is to provide a method for discharge location and temperature measurement of switchgear based on sparse pixels. This method simultaneously uses an avalanche diode array and an infrared focal plane array to locate the discharge of the internal structure of the switchgear, enabling a holographic representation of the discharge of the internal structure of the switchgear.

[0006] To achieve the above objectives, this disclosure provides the following technical solutions:

[0007] A method for discharge location and temperature measurement of switchgear based on sparse pixels includes the following steps:

[0008] S100: Acquire a visible light image of the internal structure of the high-voltage switchgear;

[0009] S200: Collects discharge optical signals from the internal structure of the high-voltage switchgear;

[0010] S300: The visible light image is segmented based on the avalanche diode array unit to obtain the first image, and the discharge light signal is focused on the first image to locate the discharge of the internal structure of the high-voltage switchgear for the first time.

[0011] S400: The visible light image is segmented based on the infrared focal plane to obtain a second image. The discharge light signal is focused on the second image to measure the temperature of the internal structure of the high-voltage switchgear, and the discharge of the internal structure of the high-voltage switchgear is located a second time based on the temperature value.

[0012] S500: Combines the positioning results of the first and second positioning to perform the final positioning of the discharge of the internal structure of the high-voltage switchgear.

[0013] Preferably, step S300 includes the following steps:

[0014] S301: Segment the visible light image based on the n×n avalanche diode array unit to obtain a first image with n×n segmented regions, and label the position of each segmented region;

[0015] S302: Focus the discharge light signal onto the first image;

[0016] S303: Measure the response intensity of the discharge light signal corresponding to a certain segmented region of the first image and compare it with the noise threshold to determine whether there is a discharge phenomenon in the segmented region.

[0017] Preferably, step S300 further includes the following steps:

[0018] S304: If it is determined that there is a discharge phenomenon in the segmented region, the position of the segmented region is recorded, and the segmented region is further divided based on the n×n avalanche diode array, while marking the position of each secondary segmented region;

[0019] S305: Measure the response intensity of each secondary segmentation region to the discharge light signal, and record the position of the secondary segmentation region with the largest response intensity, thus completing the first positioning of the discharge of the internal structure of the high-voltage switchgear.

[0020] Preferably, step S400 includes the following steps:

[0021] S401: Segment the visible light image based on n×n infrared focal plane units to obtain a second image with n×n segmented regions, and label the position of each segmented region;

[0022] S402: Focus the discharge light signal onto the second image;

[0023] S403: Measure the temperature value of the infrared focal plane unit corresponding to a certain segmented region of the second image based on the discharge light signal, and compare it with the temperature threshold to determine whether there is a discharge phenomenon in the segmented region.

[0024] Preferably, step S400 further includes the following steps:

[0025] S404: If it is determined that there is a discharge phenomenon in the segmented area, the position of the segmented area is recorded, and the segmented area is further segmented based on the n×n infrared focal plane, while marking the position of each secondary segmented area;

[0026] S405: Measure the temperature value of each secondary segmented region based on the discharge light signal, and record the location of the secondary segmented region with the highest temperature value, thus completing the second positioning of the discharge of the internal structure of the high-voltage switchgear.

[0027] Preferably, step S500 includes the following steps:

[0028] S501: Compare the positions of the segmented regions where the discharge phenomenon exists on the first image and the second image. If the positions are consistent, proceed to step S502; otherwise, return to steps S301 and S401.

[0029] S502: Compare the position of the secondary segmentation region with the highest response intensity to the discharge light signal on the first image with the position of the secondary segmentation region with the highest temperature value based on the discharge light signal on the second image. If the positions are consistent, output the coordinates of the position to complete the final positioning of the discharge of the internal structure of the high-voltage switchgear; otherwise, return to steps S304 and S404.

[0030] This disclosure also provides a switchgear discharge positioning and temperature measurement device based on sparse pixels, including:

[0031] The acquisition unit is used to acquire visible light images of the internal structure of the high-voltage switchgear.

[0032] The acquisition unit is used to acquire the discharge optical signals of the internal structure of the high-voltage switchgear;

[0033] The first positioning unit is used to segment the visible light image based on the avalanche diode array unit to obtain the first image, and to focus the discharge light signal on the first image to perform the first positioning of the discharge of the internal structure of the high-voltage switchgear.

[0034] The second positioning unit is used to segment the visible light image based on the infrared focal plane to obtain a second image, focus the discharge light signal on the second image to measure the temperature of the internal structure of the high-voltage switchgear, and perform a second positioning of the discharge of the internal structure of the high-voltage switchgear based on the temperature value.

[0035] The third positioning unit is used to combine the positioning results of the first and second positioning to perform the final positioning of the discharge of the internal structure of the high-voltage switchgear.

[0036] Preferably, the first positioning unit includes:

[0037] The first segmentation module is used to segment the visible light image based on the n×n avalanche diode array unit to obtain a first image with n×n segmented regions, and to label the position of each segmented region;

[0038] The first focusing module is used to focus the discharge light signal onto the first image;

[0039] The first determination module is used to measure the response intensity of the discharge light signal corresponding to a certain segmented region of the first image and compare it with a noise threshold to determine whether there is a discharge phenomenon in the segmented region.

[0040] The second segmentation module is used to record the location of the segmentation region where the discharge phenomenon exists, and to perform secondary segmentation of the segmentation region based on the n×n avalanche diode array, while marking the location of each secondary segmentation region.

[0041] The first recording module is used to measure the response intensity of each secondary segmentation region to the discharge light signal and record the position of the secondary segmentation region with the largest response intensity, thus completing the first positioning of the discharge of the internal structure of the high-voltage switchgear.

[0042] Preferably, the second positioning unit includes:

[0043] The third segmentation module is used to segment the visible light image based on n×n infrared focal plane units to obtain a second image with n×n segmented regions, and to label the position of each segmented region;

[0044] The second focusing module is used to focus the discharge light signal onto the second image;

[0045] The second determination module is used to measure the temperature value of the infrared focal plane unit corresponding to a certain segmentation region of the second image based on the discharge light signal, and compare it with the temperature threshold to determine whether there is a discharge phenomenon in the segmentation region.

[0046] The fourth segmentation module is used to record the position of the segmented region, and to perform secondary segmentation of the segmented region based on the n×n infrared focal plane, while marking the position of each secondary segmented region;

[0047] The second recording module is used to measure the temperature value of each secondary segmented region based on the discharge light signal, and record the position of the secondary segmented region with the highest temperature value, thus completing the second positioning of the discharge of the internal structure of the high-voltage switchgear.

[0048] Preferably, the device further includes:

[0049] The first comparison module is used to compare the positions of the segmented regions where discharge phenomena exist in the first image and the second image;

[0050] The second comparison module is used to compare the position of the secondary segmentation region with the highest response intensity to the discharge light signal on the first image with the position of the secondary segmentation region with the highest temperature value based on the discharge light signal on the second image.

[0051] Compared with the prior art, the beneficial effects of this disclosure are as follows:

[0052] 1. Photon propagation and coupling are unaffected by electromagnetic and acoustic interference, resulting in measurement results with extremely high confidence. The time synchronization and spectral characteristics of photons enable precise discharge diagnosis. Furthermore, the spatial propagation characteristics of discharge photons allow for effective fault location and visual diagnosis.

[0053] 2. By using infrared sensing technology and single-photon arrays to accurately locate discharge and heating defects qualitatively and quantitatively, a holographic presentation can be achieved, providing a precise picture of the operating status. Attached Figure Description

[0054] Figure 1 This is a flowchart of a switchgear discharge positioning method based on sparse pixels provided in one embodiment of this disclosure;

[0055] Figure 2 This is a schematic diagram of the quadrant segmentation method for avalanche diode arrays;

[0056] Figure 3 This is a schematic diagram of avalanche diode positioning;

[0057] Figure 4 This is a schematic diagram of the infrared focal plane quadrant segmentation method;

[0058] Figure 5 It is a comprehensive imaging and positioning method;

[0059] Figure 6 The device consists of an array-based partial discharge localization and infrared imaging temperature measurement device.

[0060] Figure 7 Schematic diagram of temperature calculation process for infrared array sensor. Detailed Implementation

[0061] The following will refer to the appendix. Figures 1 to 7 Specific embodiments of this disclosure are described in detail. While specific embodiments of this disclosure are shown in the accompanying drawings, it should be understood that this disclosure may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of this disclosure to those skilled in the art.

[0062] It should be noted that certain terms are used in the specification and claims to refer to specific components. Those skilled in the art will understand that different terms may be used to refer to the same component. This specification and claims do not distinguish components based on differences in terminology, but rather on differences in function. The terms "comprising" or "including" used throughout the specification and claims are open-ended and should be interpreted as "comprising but not limited to." The following descriptions are preferred embodiments for carrying out this disclosure; however, these descriptions are for the purpose of understanding the general principles of the specification and are not intended to limit the scope of this disclosure. The scope of protection of this disclosure is determined by the appended claims.

[0063] To facilitate understanding of the embodiments of this disclosure, further explanations and descriptions will be provided below with reference to the accompanying drawings and specific embodiments. The accompanying drawings do not constitute a limitation on the embodiments of this disclosure.

[0064] In one embodiment, such as Figure 1 As shown, this disclosure provides a discharge localization and temperature measurement method based on sparse pixel sensing technology, including the following steps:

[0065] S100: Acquire a visible light image of the internal structure of the high-voltage switchgear;

[0066] S200: Collects discharge optical signals from the internal structure of the high-voltage switchgear;

[0067] S300: The visible light image is segmented based on the avalanche diode array unit to obtain the first image, and the discharge light signal is focused on the first image to locate the discharge of the internal structure of the high-voltage switchgear for the first time.

[0068] S400: The visible light image is segmented based on the infrared focal plane to obtain a second image. The discharge light signal is focused on the second image to measure the temperature of the internal structure of the high-voltage switchgear, and the discharge of the internal structure of the high-voltage switchgear is located a second time based on the temperature value.

[0069] S500: Combines the positioning results of the first and second positioning to perform the final positioning of the discharge of the internal structure of the high-voltage switchgear.

[0070] The above embodiments constitute the complete technical solution of this disclosure. This embodiment uses an avalanche diode array and an infrared focal plane array to locate the discharge inside the switchgear structure, and combines the positioning results of the two to obtain the final positioning of the discharge inside the switchgear structure, which can significantly improve the accuracy of discharge positioning.

[0071] In another embodiment, step S300 includes the following steps:

[0072] S301: As Figure 2As shown, a visible light image is segmented based on an n×n avalanche diode array to obtain a first image with n×n segmented regions. The location of each segmented region is labeled (x... i，j );

[0073] S302: Focus the discharge light signal onto the first image;

[0074] S303: Measure the response intensity of the discharge light signal corresponding to a certain segmented region of the first image and compare it with the noise threshold to determine whether there is a discharge phenomenon in the segmented region.

[0075] In another embodiment, step S300 further includes the following steps:

[0076] S304: As Figure 3 As shown, if it is determined that there is a discharge phenomenon in the segmented region, the position of the segmented region is recorded, and the segmented region is further divided based on the n×n avalanche diode array. At the same time, the position of each secondary segmented region is marked as (m, n).

[0077] S305: Measure the response intensity of each secondary segmentation region to the discharge light signal, and record the position of the secondary segmentation region with the largest response intensity, thus completing the first positioning of the discharge of the internal structure of the high-voltage switchgear.

[0078] In another embodiment, step S400 includes the following steps:

[0079] S401: Segment the visible light image based on n×n infrared focal plane units to obtain a second image with n×n segmented regions, and label the position of each segmented region;

[0080] S402: Focus the discharge light signal onto the second image;

[0081] S403: Measure the temperature value of the infrared focal plane unit corresponding to a certain segmented region of the second image based on the discharge light signal, and compare it with the temperature threshold to determine whether there is a discharge phenomenon in the segmented region.

[0082] In another embodiment, step S400 further includes the following steps:

[0083] S404: As Figure 4 As shown, if it is determined that there is a discharge phenomenon in the segmented area, the position of the segmented area is recorded, and the segmented area is further segmented based on the n×n infrared focal plane, while the position of each secondary segmented area is marked.

[0084] S405: Measure the temperature value of each secondary segmented region based on the discharge light signal, and record the location of the secondary segmented region with the highest temperature value, thus completing the second positioning of the discharge of the internal structure of the high-voltage switchgear.

[0085] In another embodiment, such as Figure 5 As shown, step S500 includes the following steps:

[0086] S501: Compare the positions of the segmented regions where the discharge phenomenon exists on the first image and the second image. If the positions are consistent, proceed to step S502; otherwise, return to steps S301 and S401.

[0087] S502: Compare the position of the secondary segmentation region with the highest response intensity to the discharge light signal on the first image with the position of the secondary segmentation region with the highest temperature value based on the discharge light signal on the second image. If the positions are consistent, output the coordinates of the position to complete the final positioning of the discharge of the internal structure of the high-voltage switchgear; otherwise, return to steps S304 and S404.

[0088] In another embodiment, this disclosure also provides a switchgear discharge positioning and temperature measuring device, comprising:

[0089] The acquisition unit is used to acquire visible light images of the internal structure of the high-voltage switchgear.

[0090] The acquisition unit is used to acquire the discharge optical signals of the internal structure of the high-voltage switchgear;

[0091] The first positioning unit is used to segment the visible light image based on the avalanche diode array unit to obtain the first image, and to focus the discharge light signal on the first image to perform the first positioning of the discharge of the internal structure of the high-voltage switchgear.

[0092] The second positioning unit is used to segment the visible light image based on the infrared focal plane to obtain a second image, focus the discharge light signal on the second image to measure the temperature of the internal structure of the high-voltage switchgear, and perform a second positioning of the discharge of the internal structure of the high-voltage switchgear based on the temperature value.

[0093] The third positioning unit is used to combine the positioning results of the first and second positioning to perform the final positioning of the discharge of the internal structure of the high-voltage switchgear.

[0094] In another embodiment, the first positioning unit includes:

[0095] The first segmentation module is used to segment the visible light image based on the n×n avalanche diode array unit to obtain a first image with n×n segmented regions, and to label the position of each segmented region;

[0096] The first focusing module is used to focus the discharge light signal onto the first image;

[0097] The first determination module is used to measure the response intensity of the discharge light signal corresponding to a certain segmented region of the first image and compare it with a noise threshold to determine whether there is a discharge phenomenon in the segmented region.

[0098] The second segmentation module is used to record the location of the segmentation region where the discharge phenomenon exists, and to perform secondary segmentation of the segmentation region based on the n×n avalanche diode array, while marking the location of each secondary segmentation region.

[0099] The first recording module is used to measure the response intensity of each secondary segmentation region to the discharge light signal and record the position of the secondary segmentation region with the largest response intensity, thus completing the first positioning of the discharge of the internal structure of the high-voltage switchgear.

[0100] In another embodiment, the second positioning unit includes:

[0101] The third segmentation module is used to segment the visible light image based on n×n infrared focal plane units to obtain a second image with n×n segmented regions, and to label the position of each segmented region;

[0102] The second focusing module is used to focus the discharge light signal onto the second image;

[0103] The second determination module is used to measure the temperature value of the infrared focal plane unit corresponding to a certain segmentation region of the second image based on the discharge light signal, and compare it with the temperature threshold to determine whether there is a discharge phenomenon in the segmentation region.

[0104] The fourth segmentation module is used to record the position of the segmented region, and to perform secondary segmentation of the segmented region based on the n×n infrared focal plane, while marking the position of each secondary segmented region;

[0105] The second recording module is used to measure the temperature value of each secondary segmented region based on the discharge light signal, and record the position of the secondary segmented region with the highest temperature value, thus completing the second positioning of the discharge of the internal structure of the high-voltage switchgear.

[0106] In another embodiment, the device further includes:

[0107] The first comparison module is used to compare the positions of the segmented regions where the discharge phenomenon exists in the first image and the second image;

[0108] The second comparison module is used to compare the position of the secondary segmentation region with the highest response intensity to the discharge light signal on the first image with the position of the secondary segmentation region with the highest temperature value based on the discharge light signal on the second image.

[0109] In another embodiment, such as Figure 6 As shown, this disclosure also provides a switchgear discharge positioning device, comprising:

[0110] The system comprises an optical lens, an infrared lens, an avalanche diode array, and an infrared focal plane array. The avalanche diode array is used to perform the first segmentation of the visible light image of the internal structure of the high-voltage switchgear, and the optical lens is used to acquire the discharge light signal of the internal structure of the high-voltage switchgear and focus it on the visible light image after the first segmentation. The infrared focal plane array is used to perform the second segmentation of the visible light image of the internal structure of the high-voltage switchgear, and the infrared lens is used to acquire the discharge light signal of the internal structure of the high-voltage switchgear and focus it on the visible light image after the second segmentation.

[0111] The device also includes a drive enhancement unit for enhancing the response signals based on discharge optical signals output by the avalanche diode array and the infrared focal plane array.

[0112] The device further includes an analog-to-digital conversion unit for performing analog-to-digital conversion on the enhanced response signal to obtain a digital signal;

[0113] The device also includes a drive and control processing unit for processing digital signals to obtain the intensity value of the response signal;

[0114] The device further includes an infrared temperature sensing array and an infrared array signal processing unit. The infrared temperature sensing array is used to acquire the analog-to-digital converted response signal output from the infrared focal plane array. The infrared array signal processing unit is used to process the analog-to-digital converted response signal to obtain the temperature values ​​of each segmented region on the segmented visible light image. Specifically, as shown... Figure 7 As shown, the infrared array signal processing unit processes the response signal in the following steps:

[0115] Step 1: Calculate the voltage value of the response signal;

[0116] Step 2: Calculate the ambient temperature;

[0117] Step 3: Calculate the gain parameter;

[0118] Step 4: Pixel data calculation (including compensation, offset, infrared data compensation - offset, VDD and Ta, infrared data emissivity compensation);

[0119] Step 5: Compensation particle data calculation;

[0120] Step 6: Calculate gradient compensation for infrared data;

[0121] Step 7: Sensitivity normalization;

[0122] Step 8: Pixel temperature calculation.

[0123] The above embodiments are only for illustrating the technical concept and features of this disclosure, and are intended to enable those skilled in the art to understand the content of this disclosure and implement it accordingly. They should not be construed as limiting the scope of protection of this disclosure. All equivalent changes or modifications made in accordance with the spirit and essence of this disclosure should be included within the scope of protection of this disclosure.

Claims

1. A method for discharge location and temperature measurement of switchgear based on sparse pixels, comprising the following steps: S100: Acquire a visible light image of the internal structure of the high-voltage switchgear; S200: Collects discharge optical signals from the internal structure of the high-voltage switchgear; S300: The visible light image is segmented based on the avalanche diode array unit to obtain the first image, and the discharge light signal is focused on the first image to locate the discharge of the internal structure of the high-voltage switchgear for the first time. S400: Based on the infrared focal plane, the visible light image is segmented to obtain a second image. The discharge light signal is focused on the second image to measure the temperature of the internal structure of the high-voltage switchgear, and the discharge of the internal structure of the high-voltage switchgear is located a second time based on the temperature value. S500: Combines the positioning results of the first and second positioning to perform the final positioning of the discharge of the internal structure of the high-voltage switchgear.

2. The method according to claim 1, wherein, Step S300 includes the following steps: S301: Segment the visible light image based on the n×n avalanche diode array unit to obtain a first image with n×n segmented regions, and label the position of each segmented region; S302: Focus the discharge light signal onto the first image; S303: Measure the response intensity of the discharge light signal corresponding to a certain segmented region of the first image and compare it with the noise threshold to determine whether there is a discharge phenomenon in the segmented region.

3. The method according to claim 2, wherein, Step S300 also includes the following steps: S304: If it is determined that there is a discharge phenomenon in the segmented region, the position of the segmented region is recorded, and the segmented region is further divided based on the n×n avalanche diode array, while marking the position of each secondary segmented region; S305: Measure the response intensity of each secondary segmentation region to the discharge light signal, and record the position of the secondary segmentation region with the largest response intensity, thus completing the first positioning of the discharge of the internal structure of the high-voltage switchgear.

4. The method according to claim 1, wherein, Step S400 includes the following steps: S401: Segment the visible light image based on n×n infrared focal plane units to obtain a second image with n×n segmented regions, and label the position of each segmented region; S402: Focus the discharge light signal onto the second image; S403: Measure the temperature value of the infrared focal plane unit corresponding to a certain segmented region of the second image based on the discharge light signal, and compare it with the temperature threshold to determine whether there is a discharge phenomenon in the segmented region.

5. The method according to claim 4, wherein, Step S400 also includes the following steps: S404: If it is determined that there is a discharge phenomenon in the segmented area, the position of the segmented area is recorded, and the segmented area is further segmented based on the n×n infrared focal plane, while marking the position of each secondary segmented area; S405: Measure the temperature value of each secondary segmented region based on the discharge light signal, and record the location of the secondary segmented region with the highest temperature value, thus completing the second positioning of the discharge of the internal structure of the high-voltage switchgear.

6. The method according to claim 1, wherein, Step S500 includes the following steps: S501: Compare the positions of the segmented regions where the discharge phenomenon exists on the first image and the second image. If the positions are consistent, proceed to step S502; otherwise, return to steps S301 and S401. S502: Compare the position of the secondary segmentation region with the highest response intensity to the discharge light signal on the first image with the position of the secondary segmentation region with the highest temperature value based on the discharge light signal on the second image. If the positions are consistent, output the coordinates of the position to complete the final positioning of the discharge of the internal structure of the high-voltage switchgear; otherwise, return to steps S304 and S404.

7. A discharge positioning and temperature measuring device for implementing the method as described in any one of claims 1-6, comprising: The acquisition unit is used to acquire visible light images of the internal structure of the high-voltage switchgear. The acquisition unit is used to acquire the discharge optical signals of the internal structure of the high-voltage switchgear; The first positioning unit is used to segment the visible light image based on the avalanche diode array unit to obtain the first image, and to focus the discharge light signal on the first image to perform the first positioning of the discharge of the internal structure of the high-voltage switchgear. The second positioning unit is used to segment the visible light image based on the infrared focal plane to obtain a second image, focus the discharge light signal on the second image to measure the temperature of the internal structure of the high-voltage switchgear, and perform a second positioning of the discharge of the internal structure of the high-voltage switchgear based on the temperature value. The third positioning unit is used to combine the positioning results of the first and second positioning to perform the final positioning of the discharge of the internal structure of the high-voltage switchgear.

8. The apparatus according to claim 7, wherein, The first positioning unit includes: The first segmentation module is used to segment the visible light image based on the n×n avalanche diode array unit to obtain a first image with n×n segmented regions, and to label the position of each segmented region; The first focusing module is used to focus the discharge light signal onto the first image; The first determination module is used to measure the response intensity of the discharge light signal corresponding to a certain segmented region of the first image and compare it with the noise threshold to determine whether there is a discharge phenomenon in the segmented region. The second segmentation module is used to record the location of the segmentation region where the discharge phenomenon exists, and to perform secondary segmentation of the segmentation region based on the n×n avalanche diode array, while marking the location of each secondary segmentation region. The first recording module is used to measure the response intensity of each secondary segmentation region to the discharge light signal and record the position of the secondary segmentation region with the largest response intensity, thus completing the first positioning of the discharge of the internal structure of the high-voltage switchgear.

9. The apparatus according to claim 7, wherein, The second positioning unit includes: The third segmentation module is used to segment the visible light image based on n×n infrared focal plane units to obtain a second image with n×n segmented regions, and to label the position of each segmented region; The second focusing module is used to focus the discharge light signal onto the second image; The second determination module is used to measure the temperature value of the infrared focal plane unit corresponding to a certain segmentation region of the second image based on the discharge light signal, and compare it with the temperature threshold to determine whether there is a discharge phenomenon in the segmentation region. The fourth segmentation module is used to record the position of the segmented region, and to perform secondary segmentation of the segmented region based on the n×n infrared focal plane, while marking the position of each secondary segmented region; The second recording module is used to measure the temperature value of each secondary segmented region based on the discharge light signal, and record the position of the secondary segmented region with the highest temperature value, thus completing the second positioning of the discharge of the internal structure of the high-voltage switchgear.

10. The apparatus according to claim 7, wherein, The device further includes: The first comparison module is used to compare the positions of the segmented regions where the discharge phenomenon exists in the first image and the second image; The second comparison module is used to compare the position of the secondary segmentation region with the highest response intensity to the discharge light signal on the first image with the position of the secondary segmentation region with the highest temperature value based on the discharge light signal on the second image.

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