A bandgap reference circuit structure and module sharing BJT

By adopting a shared BJT structure in the bandgap reference circuit and using the combination of the current mirror and the switching switch section, the problem of large accuracy error and area occupancy in traditional design is solved, and a more efficient circuit design is achieved.

CN116243751BActive Publication Date: 2025-04-25ANHUI UNIV
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Patent Information

Application Number
CN202310126692.3
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-02-07
Publication Date
2025-04-25
Estimated Expiration
2043-02-07

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Abstract

The present invention relates to the field of analog integrated circuit technology, and more specifically, to a bandgap reference circuit structure sharing a BJT, and a module using the circuit structure layout. The present invention replicates two currents of different proportions through a current mirror, and controls a switching switch unit to switch different branches, so that different currents flow through the same BJT transistor when different paths are turned on, thereby replacing the traditional 9 BJT transistors with a single BJT transistor. On the one hand, the influence of the error caused by the offset of the operational amplifier in the process of clamping the terminal voltage of the traditional operational amplifier on the bandgap reference circuit is avoided, and on the other hand, the mismatch of the BJT transistor and the problem of excessive occupied area are reduced.
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Citation Information

Patent Citations

  • Methods and apparatus for low input voltage bandgap reference architecture and circuits

    CN106662887A

  • Topological structure of band-gap reference voltage with current output capability

    CN110879627A