Method of manufacturing a semiconductor device

Abstract

Embodiments in accordance with the present application provide methods of manufacturing a semiconductor device. In a method of manufacturing a semiconductor device, an initial pattern layout is obtained. The initial pattern layout includes a fin pattern including active fin patterns to be formed into active fin structures and dummy fin patterns that are not to be formed into actual fin structures or are to be removed. The positions of the fin pattern are modified as follows. The spacing between adjacent active fin patterns is increased by a first amount, the spacing between dummy fin patterns is decreased by a second amount, and the spacing between one of the dummy fin patterns and one of the active fin patterns adjacent to the dummy fin pattern is decreased by a third amount. A mandrel pattern is placed such that the modified-position fin pattern is placed along a longitudinal edge of the mandrel pattern.

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