Encapsulated light source and its preparation method

Abstract

This application discloses a packaged light source and its fabrication method. The packaged light source includes a wafer, a packaging layer encapsulating the light-emitting surface of the wafer, and an inorganic film layer bonded to the surface of the packaging layer. The inorganic film layer includes at least one inorganic film unit; each inorganic film unit contains titanium oxide (TiO2 and / or Ti3O5), and at least one inorganic film unit also contains SiO2. The titanium oxide and SiO2 contained in the inorganic film layer are zero-dimensional materials with a particle size of 1 nm to 10 nm. The inorganic film layer, containing zero-dimensional titanium oxide and SiO2, has refraction and reflection effects on light, and the reflection effect gradually increases with the increase in the number of inorganic film units, thereby increasing and adjusting the light emission angle of the packaged light source and improving the uniformity of light emission. The fabrication method of this packaged light source includes encapsulating the wafer with the packaging layer to obtain a primary packaged light source, and then performing a coating process on the primary packaged light source.

Description

Technical Field

[0001] This application belongs to the field of optoelectronic technology, specifically relating to encapsulated light sources and their preparation methods. Background Technology

[0002] LEDs are one of the most widely used light sources today, with common types including OLEDs, Mini-LEDs, and Micro-LEDs. A typical LED generally includes a substrate, wires, a chip, and a packaging layer, among which the chip and packaging layer are the main components that determine and affect the light output parameters of the light source. Improving and adjusting the performance of LED packaged light sources, such as brightness, luminous efficacy, and light uniformity, has always been an important research direction.

[0003] Improving the uniformity of LED light emission can be achieved by increasing the LED's emission angle. Industrially, there are generally two methods to improve the LED's emission angle. Method one is as follows... Figure 1 As shown, a coating is first deposited on the wafer to obtain a coated wafer 11. The light emission angle of the light source is increased by combining the packaging bracket design and the height of the packaging layer 12. Although the coating can increase the light emission angle of the light source, it significantly reduces the brightness and has the drawback of not being able to improve the white light angle. Furthermore, the adjustment of the light emission angle by the bracket design and the height of the packaging layer 12 is limited, and light leakage is also prone to occur after packaging. Method two is as follows... Figure 2 As shown, after the uncoated wafer 21 is encapsulated by the encapsulation layer 22, it also includes a secondary encapsulation process. The secondary encapsulation generally involves dispersing TiO2 into the encapsulation material (such as silicone or ethylene oxide), and then forming a secondary encapsulation layer 23 on the surface of the encapsulation layer 22. The reflection effect of TiO2 in the secondary encapsulation layer 23 is used to increase the light emission angle. However, this secondary encapsulation layer 23 is generally quite thick. In order to further increase the light emission angle, the thickness will be further increased, which will affect the thinness, brightness, etc., and the adjustment of the light emission angle is not flexible enough.

[0004] Therefore, the two existing methods still cannot effectively increase and adjust the light emission angle of LED packaged light sources. Summary of the Invention

[0005] The purpose of this application is to overcome the above-mentioned shortcomings of the prior art and provide a packaged light source and its preparation method to solve the technical problem that the prior art cannot effectively increase and adjust the light emission angle of the LED packaged light source.

[0006] To achieve the aforementioned objectives, this application, in its first aspect, provides an encapsulated light source. The encapsulated light source includes a wafer, an encapsulation layer encapsulated on the light-emitting surface of the wafer, and an inorganic film layer adhered to the surface of the encapsulation layer.

[0007] The inorganic membrane layer includes at least one inorganic membrane unit;

[0008] When the number of inorganic film units is ≥2, two or more inorganic film units are stacked and combined sequentially along the direction away from the wafer.

[0009] Each inorganic membrane unit contains titanium oxide, which includes at least one of TiO2 and Ti3O5. At least one inorganic membrane unit also contains SiO2. The titanium oxide and SiO2 contained in the inorganic membrane layer are zero-dimensional materials, and the particle size of the titanium oxide and SiO2 is 1 nm to 10 nm.

[0010] This application encapsulates a light source by depositing an inorganic film layer containing titanium oxide and SiO2 zero-dimensional materials on the surface of the encapsulation layer. These zero-dimensional materials, TiO2, Ti3O5, and SiO2, are close to atomic size. Utilizing the refraction and reflection of light by titanium oxide at this particle size, supplemented by SiO2, an increased light emission angle is achieved. Simultaneously, the inorganic film layer can include at least one inorganic film unit. When the number of inorganic film units is small, the refraction effect of the inorganic film layer is dominant, and the reflection effect is secondary. As the number of inorganic film units increases, the reflection effect of the inorganic film layer gradually strengthens. Therefore, the increased light emission angle can be adjusted by the number of inorganic film units. This application encapsulates a light source suitable for both upright and flip-chip packaging, and is applicable to various packaging forms.

[0011] In some embodiments, the titanium oxide contained in the inorganic membrane unit forms a titanium-oxygen layer, the SiO2 contained in the inorganic membrane unit forms a SiO2 layer, and the SiO2 layer is stacked and bonded to the titanium-oxygen layer within the inorganic membrane unit.

[0012] In some embodiments, when the same inorganic film unit contains a titanium-oxygen layer and a SiO2 layer, the titanium-oxygen layer is close to the wafer.

[0013] In some embodiments, the thickness of the titanium-oxygen layer is 1 nm to 25 nm.

[0014] In some embodiments, the thickness of the SiO2 layer is 1 nm to 10 nm.

[0015] In some embodiments, at least one inorganic membrane unit further contains Al2O3, which is a zero-dimensional material with a particle size of 1 nm to 10 nm. The Al2O3 contained in the inorganic membrane unit forms an Al2O3 layer, and the Al2O3 layer is stacked and bonded with a titanium-oxygen layer or a SiO2 layer within the inorganic membrane unit.

[0016] In some embodiments, when the same inorganic membrane unit contains a titanium-oxygen layer, a SiO2 layer, and an Al2O3 layer, the Al2O3 layer, the titanium-oxygen layer, and the SiO2 layer are stacked sequentially to form a sandwich structure, and the Al2O3 layer is close to the wafer.

[0017] In some embodiments, the thickness of the Al2O3 layer is 1 nm to 10 nm.

[0018] In some embodiments, when the same inorganic membrane unit contains a titanium-oxygen layer and an Al2O3 layer, the Al2O3 layer is located close to the wafer.

[0019] In some embodiments, the thickness of the inorganic membrane unit is 1 nm to 25 nm.

[0020] In some embodiments, the number of inorganic membrane units is 2 to 37.

[0021] In some embodiments, the center of the inorganic film layer is directly opposite the center of the wafer.

[0022] In some embodiments, the distance between the inorganic film layer and the wafer is 0.05 mm or more.

[0023] In some embodiments, the inorganic film layer is square, circular, elliptical, or polygonal in shape, with the center of the inorganic film layer facing the center of the wafer.

[0024] A second aspect of this application provides a method for fabricating an encapsulated light source. The method for fabricating the encapsulated light source includes the following steps:

[0025] The chip is encapsulated through an encapsulation layer to obtain a primary encapsulated light source;

[0026] A coating process is performed on the primary packaged light source to obtain the packaged light source;

[0027] The coating process includes forming an inorganic film layer on the surface of the encapsulation layer.

[0028] The preparation method of this application forms an inorganic film layer in the form of a zero-dimensional material and attaches it to the surface of the encapsulation layer. The resulting encapsulated light source has a large light emission angle that can be designed and adjusted, uniform light emission, unaffected light emission brightness, and good stability.

[0029] In some embodiments, the coating process includes vapor deposition. Attached Figure Description

[0030] To more clearly illustrate the technical solutions in the specific embodiments of this application or the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0031] Figure 1 This is a schematic diagram of the structure and light emission of the existing method 1;

[0032] Figure 2This is a schematic diagram of the structure and light emission of the existing method two;

[0033] Figure 3 This is a schematic diagram of the structure and light emission of the packaged light source according to an embodiment of this application;

[0034] Figure 4 This is a schematic diagram of the stacked inorganic membrane units contained in the inorganic membrane layer in the embodiments of this application;

[0035] Figure 5 This is a schematic diagram of a structure of an inorganic membrane unit in an embodiment of this application;

[0036] Figure 6 This is a schematic diagram of the shape of the inorganic film layer in the embodiments of this application;

[0037] Figure 7 This is a schematic diagram of the packaging light source preparation method according to an embodiment of this application.

[0038] The reference numerals in the detailed embodiments are as follows:

[0039] 11-Coated wafer; 12-Encapsulation layer;

[0040] 21-Chip; 22-Packaging layer; 23-Secondary packaging layer;

[0041] 31-Wafer wafer; 32-Encapsulation layer; 33-Inorganic film layer; 331-Inorganic film unit; 3311-Titanium-oxygen layer; 3312-SiO2 layer; 3311-Al2O3 layer. Detailed Implementation

[0042] To make the technical problems, technical solutions, and beneficial effects of this application clearer, the following detailed description is provided in conjunction with embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0043] In this application, the term "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural. The character " / " generally indicates that the preceding and following related objects have an "or" relationship.

[0044] In this application, "at least one" means one or more, and "more than one" means two or more. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c", or "at least one of a, b, and c", can both mean: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0045] It should be understood that in the various embodiments of this application, the order of the above processes does not imply the order of execution. Some or all steps may be executed in parallel or sequentially. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0046] The terminology used in the embodiments of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of this application. The singular forms “a,” “the,” and “the” used in the embodiments of this application and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise.

[0047] The weights of the relevant components mentioned in the embodiments of this application can refer not only to the specific content of each component, but also to the proportional relationship between the weights of the components. Therefore, any scaling up or down of the content of the relevant components according to the embodiments of this application is within the scope disclosed in the embodiments of this application. Specifically, the mass described in the embodiments of this application can be a mass unit known in the chemical industry, such as μg, mg, g, or kg.

[0048] The terms "first" and "second" are used for descriptive purposes only, to distinguish objects, such as substances, from one another, and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. For example, without departing from the scope of the embodiments of this application, "first XX" may also be referred to as "second XX," and similarly, "second XX" may also be referred to as "first XX." Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of that feature.

[0049] Firstly, embodiments of this application provide a packaged light source. As some embodiments of this application, the packaged light source structure is as follows: Figures 3 to 6 As shown, it includes a wafer 31, an encapsulation layer 32, the encapsulation layer 32 is encapsulated on the light-emitting surface of the wafer 31, and also includes an inorganic film layer 33, the inorganic film layer 33 is attached to the surface of the encapsulation layer 32.

[0050] The inorganic film layer 33 includes at least one inorganic film unit 331; when the number of inorganic film units 331 is ≥2, two or more inorganic film units 331 are stacked in sequence along the direction away from the wafer 31.

[0051] Furthermore, in the inorganic film layer 33, each inorganic film unit 331 contains titanium oxide, which includes at least one of TiO2 and Ti3O5. At least one inorganic film unit 331 also contains SiO2. The titanium oxide and SiO2 contained in the inorganic film layer 33 are zero-dimensional materials, and the particle size of the titanium oxide and SiO2 is 1nm to 10nm.

[0052] This application embodiment encapsulates a light source by setting an inorganic film layer 33 on the surface of the encapsulation layer 32. Through the refraction and reflection effects of the inorganic film layer 33, the light emission angle of the encapsulated light source can be increased and adjusted. The inventors have found that the compatibility between TiO2 and the secondary encapsulation layer 23 material in the prior art method two is generally poor, and TiO2 particles can only be dispersed in the secondary encapsulation layer 23 material at the micron level. To increase the light emission angle, the thickness of the secondary encapsulation layer 23 must be very thick, and many light emission angles are difficult to adjust. Further research by the inventors has shown that, in the absence of a coating on the wafer 31, by forming an inorganic film layer 33 on the surface of the encapsulation layer 32 with titanium oxide at a zero-dimensional particle size, supplemented by zero-dimensional SiO2 material, when light is incident on the inorganic film layer 33, some light is refracted by the inorganic film layer 33 and escapes, while some light is reflected back to the encapsulation layer 32 and propagates again at a different angle on the wafer 31. Under the action of refraction and reflection, the light emission angle of the encapsulated light source is ultimately increased. In the inorganic film, TiO2, Ti3O5, and SiO2 zero-dimensional materials exist in a form close to the atomic size. In the example, the particle size of the TiO2, Ti3O5, and SiO2 zero-dimensional materials contained in the inorganic film layer 33 can be typical, but not limiting, particle sizes such as 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 7 nm, and 10 nm.

[0053] The inventors further discovered that by adjusting the position and area of ​​the inorganic film layer 33 on the surface of the encapsulation layer 32, the light emission angle of the encapsulated light source can be flexibly adjusted. Furthermore, the inorganic film layer 33 can be made to include at least one inorganic film unit 331, and the light emission angle can be adjusted by changing the number and thickness of the inorganic film units 331. Figure 4 As shown.

[0054] When the number of inorganic film units 331 is 1, the materials include zero-dimensional titanium oxide and SiO2. The near-atomic-sized SiO2 zero-dimensional material is nearly transparent, and its refractive index differs from that of TiO2 and Ti3O5. It can synergistically work with the titanium oxide zero-dimensional material to enhance multi-level refraction and reflection, thereby increasing the light emission angle of the encapsulated light source. The titanium oxide and SiO2 can be a mixture or each can form layers.

[0055] When the number of inorganic film units 331 is ≥2, these inorganic film units 331 are stacked sequentially along the direction away from the wafer 31. Each inorganic film unit 331 contains titanium oxide, and at least one inorganic film unit 331 also contains SiO2. Because titanium oxide zero-dimensional materials have high whiteness and high reflectivity, when the number of inorganic film units 331 is small and the inorganic film layer 33 is thin, the refraction effect of the entire inorganic film layer 33 is dominant, and the reflection effect is secondary. When the number of inorganic film units 331 increases and the inorganic film layer 33 becomes thicker, the reflection effect of the entire inorganic film layer 33 gradually increases, and the interface between adjacent inorganic film units 331 also has a small amount of refraction and reflection effect on light. Therefore, when the number of inorganic film units 331 is different, the angles of light refraction and reflection of the entire inorganic film layer 33 will also be different, thereby increasing and adjusting the light emission angle of the packaged light source, making the light emission of the packaged light source more uniform. Furthermore, the addition of SiO2 also helps to enhance the bonding between titanium oxide materials and the bonding between each inorganic membrane unit 331. In each inorganic membrane unit 331, titanium oxide and SiO2 can be in a mixed material state or can be formed in layers.

[0056] Therefore, compared with the prior art, the light source packaged in this embodiment does not have a coating on the wafer 31, nor does it contain a secondary encapsulation layer 23. Instead, it controls the reflection and refraction of light through the inorganic film layer 33 on the encapsulation layer 32 structure. This not only achieves the above-mentioned effects, but also results in less brightness loss, a thinner profile, and avoids the drawback of wafer 31 coating preventing the large-angle display of white light encapsulated devices. Thus, it is compatible with monochromatic light and white light devices such as phosphors and quantum dots. Furthermore, the light source packaged in this embodiment may include components from the prior art such as leads and supports. The light source packaged in this embodiment is applicable to both standard-mount and flip-chip wafers 31, and is suitable for various packaging forms, such as PLCC packaging.

[0057] In some embodiments, the titanium oxide contained in the inorganic film unit 331 forms a titanium-oxygen layer 3311, and the SiO2 contained in the inorganic film unit 331 forms a SiO2 layer 3312, and the SiO2 layer 3312 is laminated and bonded to the titanium-oxygen layer 3311 within the inorganic film unit 331. The inventors have found that when the inorganic film unit 331 contains both titanium oxide and SiO2 materials, these materials can form layers and be laminated together. This layered structure, on the one hand, gives the inorganic film unit 331 a more stable effect on light reflection and refraction, which is more conducive to increasing and adjusting the light emission angle of the encapsulated light source; on the other hand, it makes the bonding between the materials stronger.

[0058] In some embodiments, when the inorganic film unit 331 contains a titanium-oxygen layer 3311 and a SiO2 layer 3312, the titanium-oxygen layer 3311 is closer to the wafer 31 than the SiO2 layer 3312 within the inorganic film unit 331. The inventors have found that although both the titanium-oxygen layer 3311 and the SiO2 layer 3312 can achieve the aforementioned effects when stacked, a closer distribution of the titanium-oxygen layer 3311 to the wafer 31 within the inorganic film unit 331 results in better light reflection and refraction, and a more significant increase in the light emission angle of the encapsulated light source.

[0059] In some embodiments, the thickness of the titanium-oxygen layer 3311 can be 1 nm to 25 nm.

[0060] In some embodiments, the thickness of the SiO2 layer 3312 can be 1 nm to 10 nm.

[0061] When the inorganic film unit 331 contains only titanium oxide, it is a titanium-oxygen layer 3311. In the example, the thickness of the titanium-oxygen layer 3311 can be a typical, but not limiting, thickness such as 1 nm, 2 nm, 5 nm, 10 nm, 15 nm, 20 nm, or 25 nm. When the inorganic film unit 331 contains both a titanium-oxygen layer 3311 and a SiO2 layer 3312, in the example, the thickness of the titanium-oxygen layer 3311 can be a typical, but not limiting, thickness such as 1 nm, 2 nm, 5 nm, 10 nm, 15 nm, 20 nm, or 25 nm, and the thickness of the SiO2 layer 3312 can be a typical, but not limiting, thickness such as 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 7 nm, or 10 nm. Of course, the thickness of the same material in each inorganic film unit 331 does not need to be the same; the thicknesses within the above ranges can be independent. These layer thicknesses are beneficial to the stability of the zero-dimensional material forming the titanium-oxygen layer 3311 or the titanium-oxygen layer 3311 and the SiO2 layer 3312, and to better exert the refraction and reflection effect on light within each inorganic film unit 331, and to increase and adjust the light emission angle of the encapsulated light source by coordinating the number of inorganic film units 331.

[0062] In some embodiments, at least one inorganic membrane unit 331 further contains Al2O3, which is a zero-dimensional material with a particle size of 1 nm to 10 nm. The Al2O3 contained in the inorganic membrane unit forms an Al2O3 layer 3313, and the Al2O3 layer 3313 is stacked and bonded to the titanium-oxygen layer 3311 or the SiO2 layer 3312 within the inorganic membrane unit 331.

[0063] When the inorganic film layer 33 contains Al2O3, Al2O3 is also a near-atomic-sized zero-dimensional material. At this point, Al2O3, similar to SiO2, is nearly transparent. Therefore, Al2O3 can, to some extent, play a synergistic role similar to SiO2 mentioned above. Furthermore, Al2O3 improves the moisture and oxygen permeability of the encapsulation layer 32, enhancing the encapsulated light source's resistance to high humidity and oxidation, thus improving product reliability. In each inorganic film unit 331, Al2O3 can be a mixture with titanium oxide or SiO2, or it can form layers independently; layering is more effective. In the inorganic film units 331 containing the Al2O3 layer 3313, the titanium-oxygen layer 3311 and the Al2O3 layer 3313 can be stacked together, or the titanium-oxygen layer 3311, the SiO2 layer 3312, and the Al2O3 layer 3313 can be stacked together.

[0064] In some embodiments, when the inorganic membrane unit 331 contains a titanium-oxygen layer 3311, a SiO2 layer 3312 and an Al2O3 layer 3313, the Al2O3 layer 3313, the titanium-oxygen layer 3311 and the SiO2 layer 3312 are stacked sequentially to form a sandwich structure, and the Al2O3 layer 3313 is close to the wafer 31.

[0065] In some embodiments, when the inorganic membrane unit 331 contains a titanium-oxygen layer 3311 and an Al2O3 layer 3313, the Al2O3 layer 3313 is close to the wafer 31.

[0066] The inventor, after research, such as Figure 5 As shown, similar to the stacked distribution of the titanium-oxygen layer 3311 and SiO2 layer 3312 mentioned above, the Al2O3 layer 3313 in the inorganic film unit 331 is located closer to the wafer 31 than the titanium-oxygen layer 3311 and SiO2 layer 3312. This will result in relatively better light reflection and refraction, and a more significant increase in the light emission angle of the packaged light source.

[0067] In some embodiments, the thickness of the Al2O3 layer 3313 can be 1 nm to 10 nm. When the inorganic film unit 331 contains a titanium-oxygen layer 3311 and an Al2O3 layer 3313, the thickness of the Al2O3 layer 3313 can be a typical, but not limiting, thickness such as 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 7 nm, or 10 nm. When the inorganic film unit 331 contains a titanium-oxygen layer 3311, a SiO2 layer 3312, and an Al2O3 layer 3313, the thickness of the Al2O3 layer 3313 can be a typical, but not limiting, thickness such as 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 7 nm, or 10 nm. Of course, the thickness of the same material in each inorganic film unit 331 does not need to be the same; the above thickness ranges can be independent. These layer thicknesses are beneficial to the stability of the Al2O3 layer 3313, and can better exert the synergistic effect of the Al2O3 layer 3313 and the titanium-oxygen layer 3311 mentioned above, thereby improving the refraction and reflection effect of the inorganic film layer 33 on light.

[0068] In some embodiments, the total thickness of the inorganic membrane unit 331 can be 1 nm to 25 nm.

[0069] By adjusting the thickness of each inorganic film unit 331, the light emission angle of the encapsulated light source can be increased and flexibly adjusted, resulting in more uniform light emission. When the number of inorganic film units 331 is ≥2, regardless of whether they contain one, two, or multiple materials, their thicknesses can be independently determined by the thicknesses mentioned above, and they are not required to be equal. In the example, the thickness of the inorganic film unit 331 can be typical but not limiting thicknesses such as 1nm, 2nm, 5nm, 10nm, 15nm, 20nm, and 25nm. These thicknesses also apply when there is only one inorganic film unit 331. Inorganic film units 331 with these thicknesses have good structural stability and good light refraction and reflection effects. The inventors have found that as the number of inorganic film units 331 increases, the light reflection effect of the inorganic film layer 33 gradually becomes stronger than its refraction effect. However, after the number of layers reaches a certain level, its effect on increasing the light emission angle of the encapsulated light source has reached its limit. Furthermore, further increasing the number of layers may lead to a decrease in the light transmittance of the inorganic film layer 33, which in turn affects the effect of increasing the light emission angle of the encapsulated light source and also affects the brightness. The number of inorganic membrane units 331 can be 1 or 2 to 37 stacked sequentially. In the example, the number can be typical but not limiting, such as 2, 4, 7, 10, 15, 20, 25, 30, 34, and 37.

[0070] In some embodiments, the center of the inorganic film layer 33 can be directly aligned with the center of the wafer 31. Since the inorganic film layer 33 can be attached to multiple locations on the surface of the encapsulation layer 32, the inventors have found that the light emission angle is most significantly increased and the light emission is more uniform when the center of the inorganic film layer 33 is directly aligned with the center of the wafer 31.

[0071] In some embodiments, the distance between the inorganic film layer 33 and the wafer 31 is 0.05 mm or more. This distance allows light to travel a sufficient distance between the wafer 31 and the inorganic film layer 33, increasing the light emission angle through refraction and multiple reflections. In exemplary examples, the distance between the inorganic film layer 33 and the wafer 31 can be a typical, but not limiting, distance such as 0.05 mm, 0.07 mm, 0.1 mm, 0.15 mm, 0.2 mm, or 0.3 mm.

[0072] In some embodiments, the shape of the inorganic film layer 33 can be Figure 6 The inorganic film layer 33, which is square, circular, elliptical, or polygonal, is aligned with the center of the wafer 31.

[0073] The inorganic film layer 33 can be a complete set of these shapes, or it can be composed of a dot matrix or concentric spacing. As in the example, the inorganic film layer 33 can be a square, circular, elliptical, or polygonal shape composed of a dot matrix. Alternatively, a square or polygonal inorganic film layer 33 can be formed from concentrically spaced frame-shaped film layers; or a circular or elliptical inorganic film layer 33 can be formed from concentrically spaced circular or elliptical rings. These regular shapes can be designed according to the light emission pattern of the packaged light source, and the regular shape of the inorganic film layer 33 makes the light emission from the packaged light source more uniform. Positioning the center of the inorganic film layer 33 directly opposite the center of the wafer 31 maximizes the increase in the light emission angle and results in more uniform light emission.

[0074] Secondly, embodiments of this application provide a method for preparing the packaged light source described in the above-described embodiments. Combined with... Figures 3 to 6 As shown, the preparation method of this application embodiment includes the following steps:

[0075] S01: The chip 31 is packaged through the packaging layer 32 to obtain a preliminary packaged light source;

[0076] S02: A coating process is performed on the initially packaged light source to form a packaged light source.

[0077] Step S01:

[0078] The packaging process in step S01 can draw on existing technology methods. For example, the wafer 31 can be fixed on the support, either upright or flip-top. After preparing and stirring the silicone, it is then applied using a dispensing process to cover the wafer 31 and fill the support, forming a surface like... Figure 3 The curved or flat surface shown is then baked to cure the silicone, forming an encapsulation layer 32.

[0079] Step S02:

[0080] The coating process in step S02 includes forming an inorganic film layer 33 on the surface of the encapsulation layer 32, as described in the embodiments of the present application. The coating process can be performed by deposition of titanium oxide, SiO2, or further including Al2O3 in the form of near-atomic-scale zero-dimensional materials on the surface of the encapsulation layer 32 to form at least one inorganic film unit 331. The thickness, quantity, and shape are controlled according to the desired light emission angle to obtain the desired inorganic film layer 33. The inorganic film layer 33 can cover a planar encapsulation layer 32, or it can have a deposition window pre-reserved on the curved surface of the encapsulation layer 32 before coating.

[0081] The preparation method of this application embodiment involves forming an inorganic film layer 33 on the surface of the encapsulation layer 32. The resulting encapsulated light source has a large and adjustable light emission angle, uniform light emission, unaffected light brightness, good high-temperature resistance, good oxidation resistance, and good stability. The preparation method is easy to mass-produce and the process is controllable.

[0082] In some embodiments, the coating process may include vapor deposition. Vapor deposition can fabricate inorganic materials into near-atomic-sized zero-dimensional nanomaterials. Specifically, it can be achieved through methods such as vacuum sputtering or magnetron deposition, where an inorganic target material is deposited on the surface of the encapsulation layer 32 in multiple atomic states to form an inorganic film layer 33, thereby obtaining an encapsulated light source to increase and adjust the light emission angle.

[0083] The following examples illustrate the encapsulated light source and its preparation method according to the embodiments of this application.

[0084] 1. Examples of encapsulated light sources and their fabrication methods:

[0085] Example 1

[0086] Please see Figure 3 This embodiment provides a packaged light source and its fabrication method. The packaged light source is a Mini-LED, which, in addition to components such as leads and brackets, includes a wafer, a packaged layer, and an inorganic film layer. The packaged layer is made of silicone material and has a spherical surface. An inorganic film layer is attached to the top of the packaged layer, with its center directly facing the center of the wafer. The inorganic film layer includes TiO2 and SiO2 zero-dimensional materials with a particle size of 1nm to 2nm. The inorganic film includes one inorganic film unit, which is a 5nm thick titanium-oxygen layer (containing TiO2) and a 5nm thick SiO2 layer stacked together. The titanium-oxygen layer is closer to the wafer than the SiO2 layer. The thickness of the inorganic film unit, which is also the thickness of the inorganic film layer, is 10nm.

[0087] The method for preparing the packaged light source in this embodiment includes the following steps:

[0088] S1: Fix the chip in this embodiment onto the bracket, prepare silicone, and fill the bracket through a dispensing process to form a packaging layer for the chip. After the packaging layer reaches the required height and the surface becomes spherical, bake it at 150°C until the silicone is cured to obtain a primary packaged light source.

[0089] S2: TiO2 and SiO2 targets are deposited on top of the encapsulation layer through vacuum sputtering to form an inorganic film layer, thus obtaining the encapsulated light source.

[0090] Example 2

[0091] Please see Figure 3 , Figure 4 This embodiment provides a packaged light source and its fabrication method. The difference between this packaged light source and Embodiment 1 is that it includes 10 inorganic film units stacked sequentially, all with the same thickness as the inorganic film units in Embodiment 1. Five of these units, like those in Embodiment 1, contain both a titanium-oxygen layer and a SiO2 layer, and have the same structure and thickness. The remaining five units contain only a titanium-oxygen layer. The two types of inorganic film units are alternately stacked, and the total thickness of the inorganic film layer is 100 nm.

[0092] In this embodiment, the method for preparing the encapsulated light source is adjusted accordingly in step S2.

[0093] Example 3

[0094] Please see Figure 3 , Figure 4 This embodiment provides an encapsulated light source and its preparation method. The difference between this encapsulated light source and Embodiment 2 is that the 10 inorganic film units and the inorganic film units bonded to the surface of the encapsulation layer in Embodiment 1 contain the same materials, internal structure, and thickness.

[0095] In this embodiment, the method for preparing the encapsulated light source is adjusted accordingly in step S2.

[0096] Example 4

[0097] Please see Figure 3 , Figure 4 This embodiment provides an encapsulated light source and its fabrication method. The difference between this encapsulated light source and Embodiment 1 is that it includes 20 sequentially stacked inorganic film units, all with the same thickness as the inorganic film units in Embodiment 1. Ten of these units, like those in Embodiment 1, contain both a titanium-oxygen layer and a SiO2 layer, and have the same structure and thickness. The remaining ten units contain only a titanium-oxygen layer. These two types of inorganic film units are alternately stacked, and the total thickness of the inorganic film layer is 200 nm.

[0098] In this embodiment, the method for preparing the encapsulated light source is adjusted accordingly in step S2.

[0099] Example 5

[0100] Please see Figure 3 , Figure 4 This embodiment provides an encapsulated light source and its preparation method. The difference between this encapsulated light source and Embodiment 4 is that the 20 inorganic film units and the inorganic film units bonded to the surface of the encapsulation layer in Embodiment 1 contain the same materials, internal structure, and thickness.

[0101] In this embodiment, the method for preparing the encapsulated light source is adjusted accordingly in step S2.

[0102] Example 6

[0103] Please see Figure 3 , Figure 4 This embodiment provides an encapsulated light source and its fabrication method. The difference between this encapsulated light source and Embodiment 1 is that it includes 30 sequentially stacked inorganic film units, all with the same thickness as the inorganic film units in Embodiment 1. Fifteen of these units, like those in Embodiment 1, contain both a titanium-oxygen layer and a SiO2 layer, and have the same structure and thickness. The remaining 15 units contain only a titanium-oxygen layer. These two types of inorganic film units are alternately stacked, and the total thickness of the inorganic film layer is 300 nm.

[0104] In this embodiment, the method for preparing the encapsulated light source is adjusted accordingly in step S2.

[0105] Example 7

[0106] Please see Figure 3 , Figure 4 This embodiment provides an encapsulated light source and its preparation method. The difference between this encapsulated light source and Embodiment 6 is that the 30 inorganic film units and the inorganic film units bonded to the surface of the encapsulation layer in Embodiment 1 contain the same materials, internal structure, and thickness.

[0107] In this embodiment, the method for preparing the encapsulated light source is adjusted accordingly in step S2.

[0108] Example 8

[0109] Please see Figure 3 , Figure 4 , Figure 5 This embodiment provides a packaged light source and its preparation method. The difference between this packaged light source and Embodiment 7 is that the inorganic film also contains Al2O3 zero-dimensional material with a particle size of 1nm to 2nm. Each of the 30 inorganic film units has an Al2O3 layer, a titanium-oxygen layer, and a SiO2 layer stacked sequentially to form a sandwich structure. The Al2O3 layer is relatively closer to the wafer. The thicknesses of the Al2O3 layer, the titanium-oxygen layer, and the SiO2 layer are 3nm, 4nm, and 3nm, respectively, and the total thickness of the inorganic film layer is 300nm.

[0110] In this embodiment, the method for preparing the encapsulated light source is adjusted accordingly in step S2.

[0111] Comparative Example 1

[0112] The difference between Comparative Example 1 and Example 1 is that the packaged light source in this comparative example does not include an inorganic film.

[0113] The preparation method of this comparative packaged light source is simply that the primary packaged light source obtained in step S1 is the comparative packaged light source.

[0114] 2. Test of light emission angle of packaged light source:

[0115] The packaged light sources obtained in Examples 1 to 8 and Comparative Example 1 were powered on, and the light emission angles were measured using an LED light distribution tester. The results are shown in Table 1.

[0116] Table 1

[0117]

[0118] As can be seen from Table 1:

[0119] ① Compared with Comparative Example 1, the light emission angles of Examples 1 to 8 are all larger. Therefore, by setting an inorganic film layer on the surface of the encapsulation layer, the light emission angle of the encapsulated light source can be increased.

[0120] ②The increase in the light emission angle varies with the number of inorganic film units. Therefore, the light emission angle of the encapsulated light source can be adjusted by adjusting the number of inorganic film units.

[0121] ③ When the number and thickness of inorganic film units are the same, the inorganic film units containing TiO2 and SiO2 improve the brightness and increase the refraction of light compared to the inorganic film units containing only TiO2, and the light emission angle of the encapsulated light source is also further increased.

[0122] ④ In Example 8, the inorganic film unit contains TiO2, SiO2 and Al2O3. Compared with Example 7, which only contains TiO2 and SiO2, although the light emission angle is slightly reduced, the brightness is improved. In addition, the oxidation resistance and high temperature resistance of the encapsulated light source are improved, and the reliability is increased.

[0123] The above embodiments merely illustrate several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of this patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A packaged light source, comprising a wafer and a packaging layer, wherein the packaging layer is packaged on the light-emitting surface of the wafer, characterized in that: It also includes an inorganic film layer, which is attached to the surface of the encapsulation layer; The inorganic membrane layer includes at least one inorganic membrane unit; The number of inorganic film units is ≥2, and two or more inorganic film units are stacked together sequentially in a direction away from the wafer. Each of the inorganic membrane units contains titanium oxide, which includes at least one of TiO2 and Ti3O5. At least one inorganic membrane unit also contains SiO2. The titanium oxide and SiO2 contained in the inorganic membrane layer are zero-dimensional materials, and the particle size of the titanium oxide and SiO2 is 1 nm to 10 nm. In the inorganic membrane unit containing SiO2, the titanium oxide and SiO2 are a mixture or each forms a layer. The titanium oxide forms a titanium-oxygen layer, and the SiO2 forms a SiO2 layer. At least one inorganic membrane unit also contains Al2O3, which forms a mixture with titanium oxide or SiO2; At least one inorganic membrane unit also contains Al2O3, which is a zero-dimensional material with a particle size of 1 nm to 10 nm. The Al2O3 contained in the inorganic membrane unit forms an Al2O3 layer, and the Al2O3 layer is stacked and bonded to the titanium-oxygen layer or the SiO2 layer in the inorganic membrane unit. The thickness of the Al2O3 layer is 1 nm to 10 nm. The Al2O3 layer, the titanium-oxygen layer and the SiO2 layer are stacked sequentially to form a sandwich structure, and the Al2O3 layer is close to the wafer.

2. The packaged light source according to claim 1, characterized in that: When the same inorganic film unit contains both the titanium-oxygen layer and the SiO2 layer, the titanium-oxygen layer is close to the wafer; and / or The thickness of the titanium-oxygen layer is 1 nm to 25 nm; and / or The thickness of the SiO2 layer is 1 nm to 10 nm.

3. The packaged light source according to claim 1, characterized in that: The thickness of the inorganic film unit is 1 nm to 25 nm; and / or The number of inorganic membrane units is 2 to 37; and / or The center of the inorganic film layer is directly opposite the center of the wafer; and / or The distance between the inorganic film layer and the wafer is greater than 0.05 mm.

4. The encapsulated light source according to any one of claims 1 to 3, characterized in that: The inorganic film layer is square, circular, elliptical, or polygonal in shape, and the center of the inorganic film layer is directly opposite the center of the wafer.

5. A method for preparing an encapsulated light source, characterized in that, Includes the following steps: The chip is encapsulated through an encapsulation layer to obtain a primary encapsulated light source; A coating process is performed on the primary packaged light source to obtain a packaged light source; The coating process includes forming the inorganic film layer of the encapsulated light source according to any one of claims 1 to 4 on the surface of the encapsulation layer; The coating process includes vapor deposition.

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