数据存储系统、数据存储方法和存储介质
By using a combination of SRAM and DRAM in solid-state drives, the bottleneck of flash memory write operations is solved, writing speed is improved, energy consumption and hardware costs are reduced, and more efficient data storage is achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- T HEAD (CHENGDU) SEMICONDUCTOR CO LTD
- Filing Date
- 2022-11-30
- Publication Date
- 2026-07-17
AI Technical Summary
In solid-state drives, write operations to flash memory become a bottleneck, leading to increased DRAM capacity requirements, putting pressure on the I/O throughput and energy efficiency of the memory controller, and increasing cost and heat dissipation requirements.
By using a combination of static random access memory (SRAM) and dynamic random access memory (DRAM), the memory controller divides the data into different parts and stores them in SRAM and DRAM respectively. The data is then combined and written when the flash memory is ready, reducing the reliance on high-capacity DRAM.
This improves the write speed of the memory controller, reduces energy consumption, lowers hardware costs and heat dissipation requirements, and enhances the overall efficiency of the solid-state drive.
Smart Images
Figure CN116257176B_ABST