键合丝键合方法和Shunt-L结构封装
By adjusting the arrangement and sequence of the bonding wires and using an alternating M-shaped curve and arched arrangement method, the problem of the inverted conical bonding wedge touching the surrounding bonding wires in the RF package device was solved, achieving a high-density and stable bonding effect.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- BOWEI INTEGRATED CIRCUITS CO LTD
- Filing Date
- 2023-02-23
- Publication Date
- 2026-07-17
AI Technical Summary
In the complex bonding environment of RF packaged devices, the upper side of the inverted cone-shaped bonding wedge is prone to touching the surrounding bonding wires, resulting in bonding density suppression points and affecting the bonding effect.
The method of alternating arrangement of the first and second bonding wire groups is adopted. The first bonding wire group is an M-shaped curve, and the second bonding wire group is an arch shape. The bonding sequence is adjusted to avoid the upper side of the inverted cone of the cleaver touching the surrounding bonding wires. The bare transistor output terminal and output pin are bonded through the first bonding wire group, and the bare transistor output terminal and RF DC blocking capacitor are bonded through the second bonding wire group.
It improves bonding performance, avoids the occurrence of bonding density inhibition points, and ensures the stability and reliability of high-density bonding.
Smart Images
Figure CN116259553B_ABST