一种抗电磁干扰的集成硅基光接收芯片及其制备方法

CN116259609BActive Publication Date: 2026-07-17SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Filing Date
2023-02-23
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Silicon-based optical receiver chips are susceptible to electromagnetic interference at high frequencies, which can lead to a decline in device performance. In particular, interference is exacerbated when the channel spacing is reduced in multi-channel designs.

Method used

A U-shaped electromagnetic shielding ring is set around the detector array, including a U-shaped bottom layer structure, a metal ring and an electrode layer. A multi-layer structure is formed by etching and deposition processes to enhance the anti-electromagnetic interference capability.

Benefits of technology

This enhances the detector's resistance to electromagnetic interference, allowing for a further reduction in the distance between adjacent detectors and enabling a more integrated silicon-based optical receiver chip design.

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Abstract

本发明涉及一种抗电磁干扰的集成硅基光接收芯片及其制备方法,所述光接收芯片设置有探测器阵列、光波导和光口;所述探测器阵列中的探测器的外围均设置有U型电磁屏蔽环。本发明的U型电磁屏蔽环极大增强了探测器的抗电磁干扰能力,使得探测器阵列中的相邻探测器距离可以进一步缩小,实现更高集成度的硅基光接收芯片设计,具有良好的市场应用前景。
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