A dual-path electronic device having a 6th order filter response

Abstract

The application discloses a dual-path electronic device with a 6-order filter response, comprising a first filter structure, a second filter structure, an isolation network Iso1, an isolation network Iso2, an isolation network Iso3, a first port Port1, a second port Port2 and a third port Port3. The dual-path electronic device with the 6-order filter response combines the respective advantages of a semiconductor passive integration process and a multilayer substrate process, and has the characteristics of miniaturization and high performance. The dual-path electronic device with the 6-order filter response integrates the functions of a power divider and frequency selection, the filter response has three transmission zero points and the characteristics of high selectivity and wide stop band. The dual-path electronic device with the 6-order filter response is stacked on a three-dimensional inductor through a Bump (conductive member) based on a flat capacitor chip of the semiconductor passive integration process, and the high-density capacitor and the vertically-distributed capacitor resistor inductor can greatly reduce the size of the device.

Description

Technical Field

[0001] This invention belongs to the field of wireless communication, and specifically relates to a dual-channel electronic device with a sixth-order filter response. Background Technology

[0002] In modern wireless communication systems, power dividers and bandpass filters play irreplaceable roles. During system design, these two devices are typically cascaded, leading to excessive area and poor performance. To address this issue, an effective method for miniaturization and improved performance is to integrate these two separate circuits into a single device: a dual-channel electronic device with a 6th-order filter response, providing both power divider and frequency selection functions.

[0003] Typically, for miniaturized, high-density integrated devices, the manufacturing process often employs CMOS or compound semiconductor passive integration processes. Resonators are usually designed using a lumped-parameter approach based on inductive and capacitive structures, and the physical implementation of the resonator inductor and its integration with the capacitor generally utilizes a two-dimensional planar integration method. However, this integration method results in a lower Q-value for the inductor, leading to a significant decrease in the filter's rectangularity coefficient. Furthermore, the planar integration method causes the inductor to occupy a large amount of planar load space, limiting the filter's miniaturization capabilities. Three-dimensional inductors based on multilayer substrate processes can reduce the inductor's planar area while increasing its Q-value; however, the excessive height between metal layers in this process results in a capacitive structure area that is significantly larger than that of passive semiconductor integration processes. Summary of the Invention

[0004] To address the technical problems mentioned in the background section, this invention proposes a dual-channel electronic device with broadband isolation characteristics and a 6th-order filter response.

[0005] To achieve the above-mentioned technical objectives, the technical solution of the present invention is as follows: A dual-channel electronic device with a 6th-order filtered response includes a first filter structure, a second filter structure, isolation networks Iso1, Iso2, and Iso3, a first port Port1, a second port Port2, and a third port Port3; the first filter structure includes a first resonator Res1, a second resonator Res2, a third resonator Res3, a fourth resonator Res4, a fifth resonator Res5, a sixth resonator Res6, a matching capacitor C7, a matching capacitor C8, and a matching inductor L7; the first resonator Res1 is a capacitor C1 and... The first resonator Res1, the second resonator Res2, the third resonator Res3, the fourth resonator Res4, the fifth resonator Res5, and the sixth resonator Res6 are all connected in a star configuration. The first resonator Res1, the second resonator Res2, and the third resonator Res3 are connected in a star configuration. The fourth resonator Res4, the fifth resonator Res5, and the sixth resonator Res6 are also connected in a star configuration. The other end of the first resonator Res1 is connected to one end of the matching capacitor C7, and the other end of the matching capacitor C7 is grounded. The other end of the second resonator Res2 is grounded. The other end of the third resonator Res3 is connected to the other end of the fourth resonator Res4. The other end of the fifth resonator Res5 is grounded. The other end of the sixth resonator Res6 is connected to one end of the matching capacitor C8, and the other end of the matching capacitor C8 is grounded. The common terminal of the third resonator Res3 and the fourth resonator Res4 is connected to one end of the matching inductor L7, and the other end of the matching inductor L7 is grounded. The second filter structure has the same structure as the first filter structure. The first port Port1 is connected to the first resonator Res1 of the first filter structure, and the first port Port1 is also connected to the first resonator Res1 of the second filter structure. The second port Port2 is connected to the sixth resonator Res6 of the first filter structure. The third port Port3 is connected to the sixth resonator Res6 of the second filter structure.

[0006] Preferably, the isolation network Iso1 includes a capacitor Cr1, a resistor R1, and a capacitor Cr3 connected in series, and the isolation network Iso3 includes a capacitor Cr3, a resistor R3, and a capacitor Cr3 connected in series. One end of the isolation network Iso1 is connected to the common terminal of the first resonator Res1, the second resonator Res2, and the third resonator Res3 of the first filter structure in a star connection, and the other end of the isolation network Iso1 is connected to the common terminal of the first resonator Res1, the second resonator Res2, and the third resonator Res3 of the second filter structure in a star connection. One end of the isolation network Iso3 is connected to the common terminal of the fourth resonator Res4, the fifth resonator Res5, and the sixth resonator Res6 of the first filter structure in a star connection, and the other end of the isolation network Iso3 is connected to the common terminal of the fourth resonator Res4, the fifth resonator Res5, and the sixth resonator Res6 of the second filter structure in a star connection.

[0007] Preferably, the isolation network Iso2 is a resistor R2; one end of the isolation network Iso2 is connected to one end of the third resonator Res3 of the first filter structure, and one end of the isolation network Iso2 is also connected to one end of the fourth resonator Res3 of the first filter structure; the other end of the isolation network Iso2 is connected to one end of the third resonator Res3 of the second filter structure, and one end of the isolation network Iso2 is also connected to one end of the fourth resonator Res3 of the second filter structure.

[0008] Preferably, the third resonator Res3 and the fourth resonator Res4 are configured to have electromagnetic field coupling between them.

[0009] Preferably, the dual-channel electronic device with a 6th-order filter response further includes a multilayer substrate, which is formed by stacking multiple dielectric layers along the stacking direction; the matching inductor L7 and the inductors in the first to sixth resonators have a three-dimensional spiral structure and are made of metallized material.

[0010] Preferably, the inductors L1 and L2 are configured such that the magnetic lines of force at both ends of the inductors L1 and L2 are perpendicular to each other and there is at least one grounding hole between L1 and L2, and the inductors L2 and L3 are configured such that the magnetic lines of force at both ends of the inductors L2 and L3 are perpendicular to each other.

[0011] Preferably, the inductors L4 and L5 are configured such that the magnetic lines of force at both ends of inductors L4 and L5 are perpendicular to each other and there is at least one grounding via between L4 and L5, and the inductors L5 and L6 are configured such that the magnetic lines of force at both ends of inductors L5 and L6 are perpendicular to each other.

[0012] Preferably, the matching inductor L7 is configured such that the magnetic lines of force at both ends of L7 are perpendicular to the magnetic lines of force at both ends of inductors L1, L3, L4, and L6, respectively.

[0013] Preferably, it further includes a semiconductor passive integrated substrate, which is formed by stacking multiple dielectric layers along the stacking direction. The semiconductor passive integrated substrate is heterogeneously integrated with the multilayer substrate by an inverted mounting method, and the connection is achieved by copper pillars.

[0014] Preferably, capacitors C1, C2, C3, C4, C5, C6, C7, C8, Cr1, and Cr3 are formed by coupling multiple metallized electrodes disposed in a passive integrated substrate; resistors R1, R2, and R3 are formed by resistive materials disposed in a passive integrated substrate.

[0015] The beneficial effects of adopting the above technical solution are as follows: This patent proposes a dual-channel electronic device with a 6th-order filtering response. This device combines the advantages of passive semiconductor integration technology and multilayer substrate technology, resulting in miniaturization and high performance. It integrates power divider and frequency selection functions, and its filtering response features three transmission zeros, high selectivity, and a wide stopband. The device utilizes a semiconductor passive integration process where planar capacitor chips are stacked on a three-dimensional inductor via bumps. The use of high-density capacitors and a vertically distributed capacitor-resistor-inductor configuration significantly reduces the device's size. The device also employs a strategically placed three-dimensional spiral inductor, ensuring the magnetic field lines at both ends are perpendicular or parallel, greatly reducing coupling between inductors. Furthermore, placing an inductor with magnetic field lines perpendicular to the magnetic field lines of two other inductors between them further reduces coupling. Finally, placing a grounding via between the two inductors further reduces coupling. Attached Figure Description

[0016] Figure 1 This is a topology diagram of a dual-channel electronic device with a 6th-order filtered response; Figure 2 This is a diagram of a dual-channel electronic device architecture with a 6th-order filtered response; Figure 3 This is a partial diagram of a semiconductor passive integrated substrate for a dual-channel electronic device with a 6th-order filtering response; Figure 4 This is a partial diagram of a multilayer substrate for a dual-channel electronic device with a 6th-order filtering response. Figure 5 This is the S-parameter performance diagram of a dual-channel electronic device with a 6th-order filtered response. Detailed Implementation

[0017] The technical solution of the present invention will be described in detail below with reference to the accompanying drawings.

[0018] This invention proposes a dual-channel electronic device topology circuit with a 6th-order filter response, which exhibits three transmission zeros, high selectivity, and a wide stopband. The topology circuit consists of a first filter structure, a second filter structure, isolation networks Iso1, Iso2, and Iso3, a first port Port1, a second port Port2, and a third port Port3. The first filter structure includes a first resonator Res1, a second resonator Res2, a third resonator Res3, a fourth resonator Res4, a fifth resonator Res5, a sixth resonator Res6, matching capacitors C7 and C8, and a matching inductor L7. The first resonator Res1 is composed of capacitor C1 and... The first resonator Res1, the second resonator Res2, and the third resonator Res6 are all connected in a star configuration. The first resonator Res1, the second resonator Res2, and the third resonator Res3 are connected in a star configuration. The fourth resonator Res4, the fifth resonator Res5, and the sixth resonator Res6 are all connected in a star configuration. The sixth resonator Res6 is connected in a star configuration. The other end of the first resonator Res1 is connected to one end of the matching capacitor C7, and the other end of the matching capacitor C7 is grounded. The other end of the second resonator Res2 is grounded. The other end of the third resonator Res3 is connected to the other end of the fourth resonator Res4. The other end of the fifth resonator Res5 is grounded. The other end of the sixth resonator Res6 is connected to one end of the matching capacitor C8, and the other end of the matching capacitor C8 is grounded. The common terminal connecting the third resonator Res3 and the fourth resonator Res4 is connected to one end of the matching inductor L7, and the other end of the matching inductor L7 is grounded. The second filter structure has the same structure as the first filter structure. The first port Port1 is connected to the first resonator Res1 of the first filter structure, and the first port Port1 is also connected to the first resonator Res1 in the second filter structure. The second port Port2 is connected to the sixth resonator Res6 in the second filter structure. The third port Port3 is connected to the sixth resonator Res6 in the first filter structure.Isolation network Iso1 includes a capacitor Cr1, a resistor R1, and a capacitor Cr3 connected in series. Isolation network Iso3 includes a capacitor Cr3, a resistor R3, and a capacitor Cr3 connected in series. One end of isolation network Iso1 is connected to the common terminal of the first resonator Res1, the second resonator Res2, and the third resonator Res3 of the first filter structure in a star connection. The other end of isolation network Iso1 is connected to the common terminal of the first resonator Res1, the second resonator Res2, and the third resonator Res3 of the second filter structure in a star connection. One end of isolation network Iso3 is connected to the common terminal of the fourth resonator Res4, the fifth resonator Res5, and the sixth resonator Res6 of the first filter structure in a star connection. The other end of isolation network Iso3 is connected to the common terminal of the fourth resonator Res4, the fifth resonator Res5, and the sixth resonator Res6 of the second filter structure in a star connection. The isolation network Iso2 is a resistor R2; one end of the isolation network Iso2 is connected to one end of the third resonator Res3 of the first filter structure, and one end of the isolation network Iso2 is also connected to one end of the fourth resonator Res3 of the first filter structure; the other end of the isolation network Iso2 is connected to one end of the third resonator Res3 of the second filter structure, and one end of the isolation network Iso2 is also connected to one end of the fourth resonator Res3 of the second filter structure.

[0019] Figure 2 This diagram illustrates the architecture of a dual-channel electronic device with a 6th-order filtered response. This dual-channel electronic device with a 6th-order filtered response is implemented using a three-dimensional spiral inductor on a multilayer substrate. Figure 1 The inductance in the topology is achieved using parallel-plate capacitors and resistive materials respectively on a semiconductor passive integrated circuit substrate. Figure 1 Capacitors and resistors in the topology. The semiconductor passive integrated circuit substrate is heterogeneously integrated with the multilayer substrate using an inverted mounting method, and copper pillars are used to achieve electrical connection at the joints.

[0020] Figure 3This is a semiconductor passive integrated circuit substrate portion of a dual-channel electronic device with a 6th-order filtering response. The semiconductor passive integrated circuit substrate is integrated using an inverted mounting method; for clarity, the substrate is hidden in this figure. High-density planar capacitors and resistive materials are used on the semiconductor passive integrated circuit substrate to implement the capacitors and resistors in the topology. Capacitors C1, C2, C3, C4, C5, C6, C7, C8, Cr1, and Cr3 are coupled by metallized electrodes disposed within the conductive passive integrated circuit substrate; resistors R1, R2, and R3 are constructed from resistive materials disposed within the semiconductor passive integrated circuit substrate. Capacitors C1, C2, C3, C4, C5, C6, C7, C8, Cr1, Cr3, and resistors R1, R2, and R3 are connected to inductors in a multilayer substrate via metal transmission lines and copper pillars within the semiconductor passive integrated circuit substrate.

[0021] Figure 4 This is the multilayer substrate portion of a dual-channel electronic device with a 6th-order filtering response. A three-dimensional spiral inductor is used on the multilayer substrate, fully utilizing the three-dimensional structure to achieve filter miniaturization. To prevent mutual inductance between inductors L1 and L2, the magnetic field lines at both ends of the two spiral inductors are placed perpendicular to each other, and a row of grounding vias between inductors L1 and L2 also serves to isolate them. To prevent mutual inductance between inductors L2 and L3, the magnetic field lines at both ends of the two spiral inductors are placed perpendicular to each other. Inductors L4, L5, and L6 are arranged in the same way as inductors L1, L2, and L3, so this structure also prevents mutual inductance between inductors L4, L5, and L6. To prevent mutual inductance between inductors L1 / L3 / L4 / L6 and inductor L7, the magnetic field lines at both ends of inductor L7 are perpendicular to the magnetic field lines at both ends of inductors L1 / L3 / L4 / L6. In the topology, the mutual inductance M is achieved through spatial coupling between inductors L3 and L4. By adjusting the size of the mutual inductance M, the position of Tz2 can be controlled.

[0022] Figure 5 To achieve the S-parameter performance of a miniaturized, heterogeneous integrated dual-channel electronic device with a 6th-order filter response and broadband isolation characteristics, the passband center frequency is 1 GHz, the relative bandwidth is 20%, the return loss is 15.5 dB, the insertion loss is 7.6 dB, and its 25 dB stopband can be extended to 5 GHz. f 0, the isolation characteristics of this dual-channel electronic device with a 6th-order filter response in DC-5 f The value is less than 25 dB in the 0-frequency range.

[0023] Those skilled in the art will understand that although preferred embodiments of this application have been described, those skilled in the art, once they learn the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments as well as all changes and modifications falling within the scope of this application.

[0024] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Therefore, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include such modifications and variations.

Claims

1. A dual-channel electronic device with a 6th-order filtered response, characterized in that, The system includes a first filter structure, a second filter structure, isolation networks Iso1, Iso2, and Iso3, a first port Port1, a second port Port2, and a third port Port3. The first filter structure includes a first resonator Res1, a second resonator Res2, a third resonator Res3, a fourth resonator Res4, a fifth resonator Res5, a sixth resonator Res6, matching capacitors C7 and C8, and matching inductor L7. The first resonator Res1 consists of capacitor C1 and inductor L7. The resonators are configured in parallel: the second resonator Res2 is composed of capacitor C2 and inductor L2 in parallel; the third resonator Res3 is composed of capacitor C3 and inductor L3 in parallel; the fourth resonator Res4 is composed of capacitor C4 and inductor L4 in parallel; the fifth resonator Res5 is composed of capacitor C5 and inductor L5 in parallel; and the sixth resonator Res6 is composed of capacitor C6 and inductor L6 in parallel. The first, second, and third resonators Res1 and Res2 are connected in a star configuration, while the fourth, fifth, and sixth resonators Res4 and Res5 are connected in a star configuration. The resonator Res6 is connected in a star configuration. The other end of the first resonator Res1 is connected to one end of the matching capacitor C7, and the other end of the matching capacitor C7 is grounded. The other end of the second resonator Res2 is grounded. The other end of the third resonator Res3 is connected to the other end of the fourth resonator Res4. The other end of the fifth resonator Res5 is grounded. The other end of the sixth resonator Res6 is connected to one end of the matching capacitor C8, and the other end of the matching capacitor C8 is grounded. The common terminal connecting the third resonator Res3 and the fourth resonator Res4 is connected to one end of the matching inductor L7, and the other end of the matching inductor L7 is grounded. The second filter structure has the same structure as the first filter structure. The first port Port1 is connected to the first resonator Res1 of the first filter structure, and the first port Port1 is also connected to the first resonator Res1 in the second filter structure. The second port Port2 is connected to the sixth resonator Res6 in the second filter structure. The third port Port3 is connected to the sixth resonator Res6 in the first filter structure. Isolation network Iso1 includes a capacitor Cr1, a resistor R1, and a capacitor Cr3 connected in series. Isolation network Iso3 includes a capacitor Cr3, a resistor R3, and a capacitor Cr3 connected in series. One end of isolation network Iso1 is connected to the common terminal of the first resonator Res1, the second resonator Res2, and the third resonator Res3 of the first filter structure in a star connection. The other end of isolation network Iso1 is connected to the common terminal of the first resonator Res1, the second resonator Res2, and the third resonator Res3 of the second filter structure in a star connection. One end of isolation network Iso3 is connected to the common terminal of the fourth resonator Res4, the fifth resonator Res5, and the sixth resonator Res6 of the first filter structure in a star connection. The other end of isolation network Iso3 is connected to the common terminal of the fourth resonator Res4, the fifth resonator Res5, and the sixth resonator Res6 of the second filter structure in a star connection. The isolation network Iso2 is a resistor R2; one end of the isolation network Iso2 is connected to one end of the third resonator Res3 of the first filter structure, and one end of the isolation network Iso2 is also connected to one end of the fourth resonator Res3 of the first filter structure. The other end of the isolation network Iso2 is connected to one end of the third resonator Res3 of the second filter structure, and one end of the isolation network Iso2 is also connected to one end of the fourth resonator Res3 of the second filter structure.

2. The dual-channel electronic device with a 6th-order filter response according to claim 1, characterized in that, The third resonator Res3 and the fourth resonator Res4 are configured to couple electromagnetically between them.

3. The dual-channel electronic device with a 6th-order filter response according to claim 1, characterized in that, The dual-channel electronic device with a 6th-order filter response also includes a multilayer substrate, which is composed of multiple dielectric layers stacked along the stacking direction; the matching inductor L7 and the inductors in the first to sixth resonators have a three-dimensional spiral structure and are made of metallized material.

4. The dual-channel electronic device with a 6th-order filter response according to claim 1, characterized in that, The inductors L1 and L2 are configured such that the magnetic lines of force at both ends of the inductors L1 and L2 are perpendicular to each other and there is at least one grounding hole between L1 and L2. The inductors L2 and L3 are configured such that the magnetic lines of force at both ends of the inductors L2 and L3 are perpendicular to each other.

5. A dual-channel electronic device with a 6th-order filter response according to claim 1, characterized in that, The inductors L4 and L5 are configured such that the magnetic lines of force at both ends of the inductors L4 and L5 are perpendicular to each other and there is at least one grounding hole between L4 and L5. The inductors L5 and L6 are configured such that the magnetic lines of force at both ends of the inductors L5 and L6 are perpendicular to each other.

6. A dual-channel electronic device with a 6th-order filtered response according to claim 4 or 5, characterized in that, The matching inductor L7 is configured such that the magnetic field lines at both ends of L7 are perpendicular to the magnetic field lines at both ends of inductors L1, L3, L4, and L6, respectively.

7. A dual-channel electronic device with a 6th-order filter response according to claim 3, characterized in that, It also includes a semiconductor passive integrated substrate, which is formed by stacking multiple dielectric layers along the stacking direction. The semiconductor passive integrated substrate is heterogeneously integrated with the multilayer substrate by an inverted mounting method, and the connection is achieved by copper pillars.

8. A dual-channel electronic device with a 6th-order filter response according to claim 1, characterized in that, The capacitors C1, C2, C3, C4, C5, C6, C7, C8, Cr1, and Cr3 are formed by coupling multiple metallized electrodes disposed in a conductive passive integrated substrate; the resistors R1, R2, and R3 are formed by resistive materials disposed in a conductive passive integrated substrate.

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