一种具有线性响应的光伏型光敏晶体管及其制备和应用
By employing a design with abundant organic material structures and easily adjustable energy levels, the linear response range of photovoltaic phototransistors was extended to 0.122–0.432 mW/cm², solving the nonlinearity problem of photocurrent variation with incident light intensity in existing technologies and enhancing the linear response and detection performance of photocurrent.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SOUTH CHINA UNIV OF TECH
- Filing Date
- 2023-03-07
- Publication Date
- 2026-07-17
AI Technical Summary
In the existing technology, phototransistors have a small linear response range, which limits their application in the field of image sensors.
It adopts a design with rich organic material structure and easy energy level adjustment, by using gold, silver or aluminum for the substrate, organic insulating layer, organic photosensitive layer and metal electrode.
In the existing technology, the linear response range of photovoltaic phototransistors is 0.122 to 0.432 mw/cm2. In the patent that the linear response range of photocurrent is 0.122 to 0.432 mw/cm2 under incident light intensity, the linear increase of photocurrent is achieved, while the responsivity, detectivity and external quantum efficiency remain basically constant. This has resulted in a photovoltaic phototransistor with the best linear response to date.
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Figure CN116261383B_ABST