Substrate processing apparatus and substrate processing method

Abstract

This invention provides a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes: a cavity providing a processing space for processing a substrate with a supercritical processing fluid; a substrate support unit supporting the substrate in the processing space; a fluid supply unit including a fluid supply line for supplying the processing fluid to the processing space; and a supply line heating unit for heating the fluid supply line.

Description

Technical Field

[0001] Embodiments of the present invention relate to a substrate processing apparatus and a substrate processing method. More specifically, embodiments of the present invention relate to an apparatus and method capable of processing a substrate using a supercritical fluid. Background Technology

[0002] Semiconductors are typically manufactured by forming circuit patterns on substrates such as silicon wafers using various processes, including photolithography. This manufacturing process generates various foreign matter, such as particles, organic contaminants, and metallic impurities. These foreign matter can cause substrate defects and directly affect the input-output ratio of semiconductor devices. Therefore, a cleaning process for removing foreign matter from the substrate is essential in semiconductor manufacturing.

[0003] Typically, substrate cleaning involves the following process: removing foreign matter from the substrate with chemical agents, washing the substrate with pure water, and then drying the substrate with isopropanol (IPA). However, when the circuit patterns of semiconductor devices are fine, not only is the drying efficiency of the substrate low, but pattern collapse, a phenomenon that damages the circuit patterns, also frequently occurs during the drying process. Therefore, this cleaning process is not suitable for semiconductor devices with linewidths below 30nm.

[0004] Therefore, recent research has been actively conducted on processes related to drying substrates using supercritical fluids, which can overcome such shortcomings.

[0005] (Patent Document 1) Korean Patent Publication No. 10-2225957 (March 11, 2021)

[0006] (Patent Document 2) Korean Patent Publication No. 10-2021-0066204 (June 7, 2021) Summary of the Invention

[0007] The purpose of embodiments of the present invention is to provide a substrate processing apparatus and a substrate processing method that can minimize the temperature error of the fluid used to perform supercritical processes.

[0008] The purpose of embodiments of the present invention is to provide a substrate processing apparatus and a substrate processing method that can more consistently maintain the substrate processing state resulting from performing a supercritical process.

[0009] The purpose of embodiments of the present invention is to provide a substrate processing apparatus and a substrate processing method that can shorten the time required for supercritical processes.

[0010] The issues to be addressed are not limited to these; other issues not mentioned can be clearly understood from the following description by a person of ordinary skill.

[0011] According to an embodiment of the present invention, a substrate processing apparatus is provided, comprising: a cavity providing a processing space for processing a substrate with a supercritical processing fluid; a substrate support unit supporting the substrate in the processing space; a fluid supply unit including a fluid supply line for supplying the processing fluid to the processing space; and a supply line heating unit for heating the fluid supply line.

[0012] Alternatively, the supply line heating unit may be configured to heat the fluid supply line using a heated fluid.

[0013] Alternatively, the supply line heating unit may cause the heated fluid to flow into the fluid supply line to heat the fluid supply line.

[0014] The heating fluid may include an inert gas. Alternatively, the heating fluid may include an inert gas with a higher thermal conductivity than the processing fluid.

[0015] Alternatively, the supply line heating unit may operate in standby mode. Alternatively, the fluid supply unit may open the fluid supply line in standby mode to allow the heated fluid to be supplied to the processing space along the fluid supply line.

[0016] Alternatively, the substrate processing apparatus according to an embodiment of the present invention may further include: a fluid recovery unit, which recovers the heating fluid flowing into the processing space to the supply line heating unit.

[0017] Alternatively, the supply line heating unit may include: a fluid injection line for injecting the heating fluid into the fluid supply line; and an injection line heater for heating the heating fluid flowing along the fluid injection line.

[0018] Alternatively, the fluid supply unit may further include a supply line heater for heating the processing fluid flowing along the fluid supply line.

[0019] Alternatively, the supply line heater may be provided downstream of the fluid supply line with reference to the portion connected to the fluid injection line.

[0020] Alternatively, the fluid supply unit may further include a filter provided downstream of the fluid supply line with reference to the portion connected to the fluid injection line.

[0021] Alternatively, the supply line heater may operate in a manner that heats the processed fluid to above a critical temperature.

[0022] According to an embodiment of the present invention, a substrate processing apparatus is provided, comprising: a cavity providing a processing space for processing a substrate with a supercritical processing fluid; a chamber heater for heating the processing space to above the critical temperature of the processing fluid; a substrate support unit for supporting the substrate in the processing space; a fluid supply unit having a fluid supply line for supplying the processing fluid to the processing space, and having a filter and a supply line on / off valve respectively provided on the fluid supply line; a through-hole unit connected to the processing space; and a supply line heating unit having a fluid injection line for injecting heating fluid into the fluid supply line, and having an injection line heater and an injection line on / off valve respectively provided on the fluid injection line, wherein the fluid injection line is connected upstream of the fluid supply line with reference to the filter, and the supply line heating unit operates in a standby mode by causing the heated heating fluid to flow into the fluid supply line to heat the fluid supply line, wherein the supply line on / off valve of the fluid supply unit is opened and operated in the standby mode to supply the heated heating fluid along the fluid supply line to the processing space.

[0023] The fluid supply unit may further include a supply line heater for heating the processing fluid flowing along the fluid supply line to above a critical temperature. The fluid supply line may include a main line and a first branch line and a second branch line branching from the main line to supply the processing fluid to the upper and lower parts of the processing space, respectively. The filter may be disposed on the main line. The supply line on / off valves may be disposed on the main line, the first branch line, and the second branch line, respectively. The supply line heater may be provided on the main line between the portion connecting the fluid injection line and the filter to heat the heating fluid in the standby mode.

[0024] Alternatively, the substrate processing apparatus according to an embodiment of the present invention may further include: a fluid recovery unit, which recovers the heated fluid from the processing space to the supply line heating unit in the standby mode.

[0025] On the other hand, in the substrate processing apparatus according to an embodiment of the present invention, the supply line heating unit may also be configured such that the supply line heating unit includes a heating fluid line that wraps around the fluid supply line and forms a double tube with the fluid supply line, and the heated heating fluid flows to the heating fluid line to heat the fluid supply line.

[0026] According to an embodiment of the present invention, a substrate processing method is provided, wherein a substrate is processed in a processing space of a cavity using a supercritical processing fluid. The substrate processing method includes: a first step of heating a fluid supply line connected to the processing space in a standby mode; and a second step of performing a supercritical process mode in which the processing fluid is supplied to the processing space through the heated fluid supply line to heat the processing space and process the substrate.

[0027] Alternatively, the first step may involve flowing heated fluid into the fluid supply line to heat the fluid supply line.

[0028] Alternatively, the first step may involve supplying the heated fluid to the processing space by allowing the heated fluid to flow into the fluid supply line while the fluid supply line is open.

[0029] Alternatively, the first step may determine the heating temperature of the heating fluid based on at least one of the temperature of the fluid supply line and the temperature of the processing space.

[0030] The solutions to the problem will be explained in more detail and clearly through the embodiments and accompanying drawings described below. In addition, various solutions other than those mentioned can be proposed below.

[0031] According to an embodiment of the present invention, the fluid supply line of the fluid supply unit is heated by the supply line heating unit, thereby adjusting the temperature of the processing fluid flowing along the fluid supply line to the processing space of the cavity within a certain range through heat transfer in order to perform a supercritical process. Therefore, when performing a supercritical process, supplying the processing fluid at a temperature adjusted to a certain range to the processing space can shorten the supercritical atmosphere formation time. In addition, minimizing temperature errors in the processing fluid caused by temperature drops in the fluid supply line can reduce damage to the substrate and maintain the substrate processing state more consistently.

[0032] The effects of the invention are not limited thereto, and those skilled in the art will clearly understand from this specification and the accompanying drawings other effects not mentioned. Attached Figure Description

[0033] Figure 1 This is a plan view showing a substrate processing apparatus according to an embodiment of the present invention.

[0034] Figure 2 It is shown Figure 1 The diagram shows a cross-sectional view of the first process chamber.

[0035] Figure 3 It is a diagram related to the phase transition of carbon dioxide.

[0036] Figure 4 It is shown Figure 1 The diagram shows a structural example of the second process chamber.

[0037] Figure 5 It is shown Figure 4 The flowchart shown illustrates the operation of the second process chamber.

[0038] Figure 6 This is a structural diagram showing the fluid supply module of a substrate processing apparatus according to an embodiment of the present invention.

[0039] Figure 7 as well as Figure 8 These are structural diagrams showing examples of modified second process chambers of a substrate processing apparatus according to embodiments of the present invention.

[0040] (Explanation of reference numerals in the attached diagram)

[0041] 1000: Index Module

[0042] 2000: Process Module

[0043] 3000: Fluid Supply Module

[0044] 2300: First process chamber

[0045] 2400: Second process chamber

[0046] 2410: Cavity

[0047] 2411: Processing Space

[0048] 2420: Chamber heater

[0049] 2430: Substrate support unit

[0050] 2440: Fluid Supply Unit

[0051] 2441: Fluid Supply Line

[0052] 2446: Filter

[0053] 2447a, 2447b, 2447c: Supply line on / off valves

[0054] 2448: Supply line heater

[0055] 2450: Supply line heating unit

[0056] 2451: Fluid Injection Line

[0057] 2452: Injection line heater

[0058] 2453: Injection line on / off valve

[0059] 2460: Fluid Recovery Unit

[0060] 2470: Through-hole unit

[0061] 2480: Drainage Unit Detailed Implementation

[0062] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings to enable those skilled in the art to readily implement the invention. However, the present invention can be implemented in various different forms and is not limited to the embodiments described herein.

[0063] When describing embodiments of the present invention, specific descriptions of known functions or structures are omitted when it is determined that such specific descriptions would unnecessarily obscure the spirit of the invention. Parts that perform similar functions and effects are referred to by the same reference numerals in all drawings.

[0064] At least some of the terminology used in this specification is defined in consideration of the function of this invention, and therefore may vary depending on the user's or operator's intent, convention, etc. Therefore, the terminology should be interpreted based on the entire content of this specification. Furthermore, in this specification, when a component is mentioned as being included, unless specifically stated otherwise, it means that other components may also be included, rather than excluding other components. Moreover, when a part is mentioned as being connected (or joined) to another part, it includes not only direct connection (or joining) but also indirect connection (or joining) through other parts.

[0065] On the other hand, in the accompanying drawings, for ease of understanding, the size or shape of the constituent elements, the thickness of the lines, etc., may be exaggerated to some extent.

[0066] The substrate processing apparatus according to embodiments of the present invention can perform supercritical processes, etc. A supercritical process refers to a process that processes a substrate using a fluid in a supercritical state. For example, a supercritical process, as a treatment of a substrate using a fluid in a supercritical state, can be a supercritical cleaning process that performs cleaning or a supercritical drying process that performs drying. Of course, supercritical processes are not limited to such examples.

[0067] The substrate processed by the substrate processing apparatus according to an embodiment of the present invention should be interpreted as the following general concept: it includes, of course, various wafers including silicon wafers, organic substrates and glass substrates, and also includes all substrates used to manufacture semiconductor elements, displays and other products in which circuit patterns are formed on thin films.

[0068] The substrate processing apparatus according to an embodiment of the present invention may include an index module (see reference). Figure 1 (See attached figure 1000), process module (refer to) Figure 1(see attached figure 2000) and fluid supply module (see attached figure 2000) Figure 6 (See attached figure 3000). The index module can receive data from an external substrate (see attached figure 3000). Figure 2 as well as Figure 4 The substrate is transported to the process module (reference numeral S). The process module can use fluids to process the substrate. The fluid supply module can supply fluids to the process module.

[0069] Figure 1 This is a plan view illustrating a substrate processing apparatus according to an embodiment of the present invention. Figure 1 This shows the structure of the index module and the process module, etc. (Refer to...) Figure 1 The index module 1000 may be an EFEM (equipment front end module) including a loading port 1100 and an index unit 1200. The process module 2000 may include a buffer chamber 2100, a transfer chamber 2200, a first process chamber 2300, and a second process chamber 2400.

[0070] The loading port 1100, index unit 1200, and process module 2000 can be arranged in a row. The direction in which the loading port 1100, index unit 1200, and process module 2000 are arranged in sequence is defined as the first direction X. In addition, when viewed from above, the direction perpendicular to the first direction X is defined as the second direction Y, and the direction perpendicular to both the first direction X and the second direction Y is defined as the third direction Z.

[0071] Multiple loading ports 1100 can be arranged in a row along the second direction Y. The substrate can be housed in a housing C. Housing C can be a FOUP (front-opening unified pod). Housing C can be loaded into loading ports 1100 from external transport or unloaded from loading ports 1100 and transported externally. Housing C can be moved between loading ports 1100 of the substrate processing apparatus by housing handling devices such as OHT (overhead hoist transport), AGV (automated guided vehicle), and RGV (rail guided vehicle), or by operators.

[0072] The indexing unit 1200 can transport a substrate between the housing C, which is loaded in the loading port 1100, and the process module 2000. The indexing unit 1200 may include an indexing track 1210 and an indexing robot 1220. The indexing track 1210 provides a path for the indexing robot 1220 to move. The indexing track 1210 may be provided with its length direction parallel to the second direction Y. The indexing robot 1220 can handle the substrate.

[0073] The indexing robot 1220 may include a robot base 1221, a robot body 1222, and a robot arm 1223. The robot base 1221 can move along the index track 1210. The robot body 1222 is provided to be able to move along a third direction Z on the robot base 1221 and to rotate about the third direction Z axis. The robot arm 1223 is provided to the robot body 1222 in a forward and backward manner. A hand can be provided at one end of the robot arm 1223 to hold or release the substrate. For example, the indexing robot 1220 may have multiple robot arms 1223, which can be arranged in a stacked manner along the third direction Z and driven individually. Such an indexing robot 1220 can move the robot base 1221 along the index track 1210 and operate the robot body 1222 and the robot arm 1223 to transport the substrate between the housing C and the process module 2000.

[0074] The index module 1000, buffer chamber 2100, and transfer chamber 2200 can be arranged sequentially along the first direction X. The transfer chamber 2200 can be arranged parallel to the first direction X in its length direction. The first process chamber 2300 and the second process chamber 2400 can be arranged to the side of the transfer chamber 2200 in the second direction Y. For example, the first process chamber 2300 and the second process chamber 2400 can be arranged facing each other on both sides of the transfer chamber 2200 in the second direction Y. The arrangement of chambers 2100, 2200, 2300, and 2400 is not limited to this and can be appropriately changed according to various factors such as space occupation and process efficiency.

[0075] The buffer chamber 2100 can provide space for a substrate to be temporarily held while being transported between the indexing module 1000 and the process module 2000. For example, if the indexing robot 1220 transports the substrate from the housing C to the buffer chamber 2100, the transfer robot 2220 of the transfer chamber 2200 can transport the substrate from the buffer chamber 2100 to the first process chamber 2300 or the second process chamber 2400.

[0076] The transfer chamber 2200 can transport a substrate between the surrounding buffer chamber 2100, the first process chamber 2300, and the second process chamber 2400. The transfer chamber 2200 may include a transfer track 2210 and a transfer robot 2220. The transfer track 2210 provides a path for the transfer robot 2220 to move. The transfer track 2210 may be provided parallel to a first direction X. The transfer robot 2220 can handle the substrate.

[0077] The transfer robot 2220 may include a robot base 2221, a robot body 2222, and a robot arm 2223. The robot base 2221, robot body 2222, and robot arm 2223 of the transfer robot 2220 can be configured similarly to the robot base 1221, robot body 1222, and robot arm 1223 of the indexing robot 1220, therefore a detailed description is omitted. Such a transfer robot 2220 can move its robot base 2221 along a transfer track 2210 while its robot body 2222 and robot arm 2223 operate, thereby transporting a substrate between a buffer chamber 2100, a first process chamber 2300, and a second process chamber 2400.

[0078] The first process chamber 2300 and the second process chamber 2400 can perform different processes on the substrate. The first process performed in the first process chamber 2300 and the second process performed in the second process chamber 2400 can be processes performed sequentially. For example, a first process including a chemical preparation process, a washing process, and a first drying process can be performed in the first process chamber 2300, and a second process including a second drying process can be performed in the second process chamber 2400 as a subsequent process to the first process. The first drying process can be a wet drying process using an organic solvent, and the second drying process can be a supercritical drying process using a supercritical fluid. Alternatively, depending on the circumstances, only one of the first and second drying processes can be performed. Of course, the processes performed in the first process chamber 2300 and the second process chamber 2400 are not limited to such examples.

[0079] Figure 2 This is a cross-sectional view schematically illustrating the first process chamber 2300 of a substrate processing apparatus according to an embodiment of the present invention. (Refer to...) Figure 2 To illustrate the first process chamber 2300. The first process chamber 2300 may include a housing 2310 (see reference). Figure 1The housing 2310 includes a substrate support unit 2320, a fluid supply unit 2330, and a processing container 2340. The housing 2310 provides a processing space for performing the first process. The substrate support unit 2320 supports the substrate S within the processing space of the housing 2310. The fluid supply unit 2330 supplies fluid for the first process to the substrate S supported by the substrate support unit 2320. The processing container 2340 recovers fluid that spills from the substrate S during the execution of the first process.

[0080] The substrate support unit 2320 of the first process chamber 2300 may include a rotating head 2321, a plurality of clamping pins 2323, and rotation drive mechanisms 2325 and 2326. The rotating head 2321 is provided to be able to rotate about a third direction Z axis, and the rotation drive mechanisms 2325 and 2326 can rotate the rotating head 2321. The rotating head 2321 may include support pins 2322 for supporting the substrate S (hereinafter, omitting and referring to as reference numerals). The clamping pins 2323 can fix the position of the substrate supported by the support pins 2322.

[0081] Support pins 2322 can protrude from the top of the rotating head 2321 to support the bottom of the substrate, and are spaced apart from each other. Clamping pins 2323 can be provided on the rotating head 2321. The clamping pins 2323 can support the periphery of the substrate in contact at spaced-apart positions to prevent the substrate from detaching from the fixed position. Specifically, the clamping pins 2323 can be moved from the center side of the rotating head 2321 to the outside to a standby position or from the outside side of the rotating head 2321 to the center side to a support position by a pin drive mechanism. Such clamping pins 2323 can be moved to the standby position to standby when the substrate is loaded or unloaded from the rotating head 2321, and can be moved to the support position to support the substrate during the execution of a first process for handling the loaded substrate. The clamping pins 2323 and the pin drive mechanism can constitute a substrate chuck.

[0082] The rotary drive mechanisms 2325 and 2326 may include a third-direction Z-axis component 2325 connected to the rotary head 2321 and a drive motor 2326 for rotating the shaft component 2325. If the rotary head 2321 rotates via the rotary drive mechanisms 2325 and 2326, the substrate fixed in position by the clamping pin 2323 can be rotated.

[0083] The fluid supply unit 2330 of the first process chamber 2300 may include an arm support rod 2331, a nozzle arm 2332, a nozzle 2333, and a support rod drive mechanism 2334.

[0084] The processing container 2340 may be disposed within the processing space of the housing 2310 and formed as a cup structure having an open upper portion and an internal receiving space communicating with the open upper portion. The rotating head 2321 is disposed within the receiving space. The arm support rod 2331 may be disposed outside the processing container 2340 within the processing space of the housing 2310 and provided parallel to the third direction Z in its length direction. The nozzle arm 2332 may be attached to the upper portion of the arm support rod 2331 and extend in a direction perpendicular to the third direction Z. The nozzle 2333 may be provided at the front end of the nozzle arm 2332 to spray fluid downwards. The support rod drive mechanism 2334 may be configured to perform at least one of rotation (rotation about a third-direction axis) and lifting (lifting along the third direction) of the arm support rod 2331. If the support rod drive mechanism 2334 is activated, the nozzle 2333 may move (rotational movement and / or lifting movement).

[0085] According to such a fluid supply unit 2330, the nozzle 2333 can be rotated about the arm support rod 2331 via the support rod drive mechanism 2334 to be in either a standby position or a supply position. In this case, the standby position of the nozzle 2333 can be a position where the nozzle 2333 is vertically above the rotating head 2321, and the supply position of the nozzle 2333 can be a position where the nozzle 2333 is positioned vertically above the rotating head 2321 so that the fluid ejected from the nozzle 2333 is supplied to the substrate on the rotating head 2321. The nozzle 2333 can be moved to the standby position to be in standby mode when the substrate is loaded or unloaded from the rotating head 2321, and can be moved to the supply position to supply fluid to the substrate during the execution of a first process for handling the loaded substrate.

[0086] The first process chamber 2300 may include multiple fluid supply units 2330 as described. These multiple fluid supply units 2330 may supply different fluids to each other. For example, the different fluids supplied by the multiple fluid supply units 2330 may be cleaning agents, rinsing agents, and organic solvents. For example, the cleaning agent may be a hydrogen peroxide solution, a solution of hydrogen peroxide mixed with ammonia, hydrochloric acid, or sulfuric acid, or a hydrofluoric acid solution. The rinsing agent may be pure water. The organic solvent may be isopropanol. Of course, the cleaning agents, rinsing agents, and organic solvents are not limited to these examples.

[0087] If fluid is supplied from nozzle 2333 to the top of the substrate and the rotating head 2321 rotates, the fluid supplied to the substrate can be scattered from the substrate to the surrounding area. Processing container 2340 can collect such scattered fluid. Processing container 2340 can be composed of multiple containers. Multiple containers can collect different fluids from each other, and the number of containers can be appropriately selected according to the amount of fluid used in the first process. The following description is based on the case where processing container 2340 is configured with three containers.

[0088] The cup-shaped containers constituting the processing container 2340 can be arranged away from the center of the rotating head 2321 in the order of first container 2340a, second container 2340b, and third container 2340c. The processing container 2340 has inlets 2341 formed at different heights along the third direction Z in each of the containers 2340a, 2340b, and 2340. The processing container 2340 can be provided with a structure that allows it to be raised and lowered along the third direction Z so that any one of the inlets 2341a, 2341b, and 2341c is at the same height as the substrate on the rotating head 2321. For example, a lifting drive mechanism 2343 can be connected to the third container 2340c. Each of the containers 2340a, 2340b, and 2340 can be connected at the bottom to a recovery line 2342 for conveying the recovered fluid to a regeneration device.

[0089] An example of the process of performing the first process in the first process chamber 2300 is as follows.

[0090] If the substrate is moved into the processing space of the housing 2310 by the transfer robot 2220 and loaded onto the rotating head 2321, a cleaning agent is supplied as a fluid to the surface of the substrate. The substrate is rotated by the rotating head 2321 so that the supplied cleaning agent is evenly diffused onto the surface of the substrate. The processing container 2340 is raised and lowered so that the first inlet 2341a of the first container 2340a is at the same height as the substrate. In this process, foreign matter on the substrate is removed by the cleaning agent, and the cleaning agent scattered from the substrate is recovered into the first container 2340a.

[0091] If the chemical process for removing foreign matter with a cleaning agent is completed, pure water is supplied to the top of the substrate as a rinsing agent, causing the processing container 2340 to rise and fall so that the second inlet 2341b of the second container 2340b is at the same height as the substrate. In this process, the cleaning agent remaining on the substrate is removed by pure water, and the pure water that has splashed off the substrate is recovered into the second container 2340b.

[0092] If the washing process, in which the cleaning agent is removed by rinsing agent, is completed, organic solvent is supplied to the top of the substrate, causing the processing container 2340 to rise or fall so that the third inlet 2341c of the third container 2340c is at the same height as the substrate. Here, a first drying process, in which organic solvent replaces pure water, is performed, and the organic solvent that has been scattered from the substrate is recovered into the third container 2340c.

[0093] In the second process chamber 2400, a second process, including a supercritical drying process utilizing a supercritical fluid, can be performed. A supercritical fluid refers to a fluid that has reached a critical state, exceeding its critical temperature and pressure, and cannot be distinguished as a liquid or gas. Supercritical fluids possess molecular densities close to liquids but viscosity close to gases. Such supercritical fluids exhibit very high diffusion, penetration, and solubility, which is conducive to chemical reactions. Furthermore, supercritical fluids have very low surface tension and do not impose interfacial tension on fine structures; therefore, when used in the drying process of substrates, they can ensure excellent drying efficiency and prevent pattern collapse. In supercritical drying processes, carbon dioxide can be used as the supercritical fluid. However, supercritical fluids are not limited to carbon dioxide.

[0094] Figure 3 This diagram relates to the phase transition of carbon dioxide. When the temperature reaches above 31.1℃ and the pressure reaches above 7.38 MPa, carbon dioxide becomes supercritical. Carbon dioxide is non-toxic, non-flammable, and inert. It possesses the following properties advantageous for drying processes: its solubility is easily controlled by adjusting temperature and pressure due to its low critical temperature and pressure; its diffusion coefficient is approximately 10 to 100 times lower than that of water or other organic solvents; and its surface tension is extremely low. Furthermore, carbon dioxide can be reused not only as a byproduct of various chemical reactions but also by regenerating it for use in drying processes, resulting in minimal environmental impact.

[0095] Figure 4 This is a structural diagram illustrating an example of a second process chamber 2400 of a substrate processing apparatus according to an embodiment of the present invention. Figure 5 This is an illustrative example. Figure 4 The flowchart shows the operation of the second process chamber 2400. (Refer to...) Figure 4 , Figure 5The second process chamber 2400 will be described below. The second process chamber 2400 may include a chamber 2410, a chamber heater 2420, a substrate support unit 2430, a fluid supply unit 2440, a through-hole unit 2470, a drain unit 2480, and a supply line heating unit 2450. The second process, including a supercritical drying process, can be performed inside the chamber 2410. The substrate can be processed inside the chamber 2410 using a supercritical fluid. The fluid used to perform the supercritical drying process can be supplied to the interior of the chamber 2410 through the fluid supply unit 2440. Hereinafter, the fluid that is in a supercritical state for performing the supercritical drying process will be referred to as the processing fluid.

[0096] The cavity 2410 can be configured as an internal processing space 2411 that can be cut off from the outside while providing space for performing a second process, and is provided with a structure capable of withstanding the high temperature and high pressure required for performing a supercritical drying process. The cavity 2410 may include an upper body 2415 and a lower body 2416, and the processing space 2411 is provided by combining the upper body 2415 and the lower body 2416.

[0097] The upper body 2415 can be positioned above and fixed in place by the lower body 2416. The lower body 2416 can be raised and lowered relative to the upper body 2415 along the third direction Z by a main body lifting mechanism such as a cylinder. If the lower body 2416 descends and separates from the upper body 2415, the processing space 2411 of the cavity 2410 is opened, and the substrate can be moved into or out of the processing space 2411. If the lower body 2416 rises and is close to the upper body 2415, the processing space 2411 is sealed, and the processing space 2411 can be cut off from the outside during the second process.

[0098] The chamber heater 2420 can heat the processing space 2411 of the chamber 2410 to maintain the processing fluid supplied to the processing space 2411 in a supercritical state. The chamber heater 2420 can heat the processing fluid to above the critical temperature. The chamber heater 2420 can create a supercritical atmosphere in the processing space 2411. As an example, the chamber heater 2420 can be provided on the wall of the chamber 2410.

[0099] The substrate support unit 2430 of the second process chamber 2400 is disposed in the processing space 2411 of the chamber 2410. The substrate support unit 2430 supports the substrate that is moved into the processing space 2411 by the transfer robot 2220. The substrate support unit 2430 can be provided as a fixed structure or as a rotatable structure.

[0100] The fluid supply unit 2440 of the second process chamber 2400 may include a fluid supply line 2441 for supplying process fluid to the process space 2411. Additionally, the fluid supply unit 2440 may include a check valve 2445, a filter 2446, and multiple supply line on / off valves 2447a, 2447b, and 2447c provided on the fluid supply line 2441. As an example, the process fluid may be supplied to the process space 2411 in a gaseous state and undergo a phase transition to a supercritical state within the process space 2411. Alternatively, the process fluid may also be supplied to the process space 2411 in a supercritical state.

[0101] The fluid supply line 2441 may include a main line 2442, a first branch line 2443, and a second branch line 2444. The first branch line 2443 and the second branch line 2444 may branch from the main line 2442. The first branch line 2443 may be connected to the upper body 2415 to enable the processing fluid from the main line 2442 to be supplied to the processing space 2411 from the upper side of the substrate supported by the substrate support unit 2430. The second branch line 2444 may be connected to the lower body 2416 to enable the processing fluid from the main line 2442 to be supplied to the processing space 2411 from the lower side of the substrate supported by the substrate support unit 2430.

[0102] Multiple supply line on / off valves may include a main valve 2447a, a first valve 2447b, and a second valve 2447c. Alternatively, a check valve 2445, a filter 2446, and the main valve 2447a may be installed on the main line 2442, the first valve 2447b on the first branch line 2443, and the second valve 2447c on the second branch line 2444. The check valve 2445 may be positioned on the upstream side of the main line 2442 to prevent the processed fluid from flowing back downstream (to the first or second branch line side) instead of along the main line 2442. The main valve 2447a may be positioned on the downstream side of the main line 2442 to open and close the main line 2442 and regulate the flow rate of the processed fluid from the main line 2442 to the first and second branch lines 2443 and 2444. Filter 2446 can be configured between check valve 2445 and main valve 2447a to remove foreign matter from the process fluid flowing along main line 2442. First valve 2447b can open and close first branch line 2443 and regulate the flow rate of the process fluid flowing along first branch line 2443. Second valve 2447c can open and close second branch line 2444 and regulate the flow rate of the process fluid flowing along second branch line 2444.

[0103] The through-hole unit 2470 can be connected to the processing space 2411 to discharge the processing fluid supplied to the processing space 2411 in a gaseous state. The through-hole unit 2470 can discharge the processing fluid from the upper part of the processing space 2411 to the outside. The through-hole unit 2470 may include a through-hole line 2471 coupled to the upper body 2415 and a through-hole line on-off valve 2472 provided on the through-hole line 2471 to open and close the through-hole line 2471 and regulate the flow rate of the processing fluid flowing along the through-hole line 2471.

[0104] The drain unit 2480 can be connected to the processing space 2411 to discharge the processing fluid supplied to the processing space 2411 in a liquid state. The drain unit 2480 can discharge the processing fluid from the lower part of the processing space 2411 to the outside. The drain unit 2480 may include a drain line 2481 coupled to the lower body 2416 and a drain line on / off valve 2482 provided on the drain line 2481 to open and close the drain line 2481 and regulate the flow rate of the processing fluid flowing along the drain line 2481.

[0105] The supply line heating unit 2450 can heat the fluid supply line 2441. The temperature of the processed fluid flowing along the heated fluid supply line 2441 can be adjusted to a certain range by the movement of heat. For example, when the processed fluid is supplied to the processing space 2411 in a supercritical state, the temperature of the processed fluid can be prevented from dropping below the critical temperature during the supply process; when the processed fluid is supplied to the processing space 2411 in a gaseous state, the temperature of the processed fluid can be increased during the supply process.

[0106] The second process chamber 2400 can operate in a supercritical process mode for performing supercritical drying, and then operate in a standby mode after the supercritical process mode is terminated. The second process chamber 2400 can repeat this supercritical process mode and standby mode.

[0107] The second process chamber 2400, for operation in supercritical process mode, performs the following steps: supporting the substrate with the substrate support unit 2430, and then sealing the processing space 2411 by pressing the lower body 2416 tightly against the upper body 2415; and heating the sealed processing space 2411 with the chamber heater 2420 and supplying the processing fluid to the sealed processing space 2411 with the fluid supply unit 2440 to form a supercritical atmosphere. In the initial stage of the supercritical process mode when the processing fluid flows into the processing space 2411, the temperature of the processing space 2411 may not have reached the critical temperature of the processing fluid. The supply line heating unit 2450 raises the temperature of the fluid supply line 2441 to a certain level in standby mode, and supplies the processing fluid, adjusted to a certain temperature range, to the processing space 2411 in supercritical process mode, thereby shortening the supercritical atmosphere formation time. In addition, minimizing the temperature error of the processing fluid caused by the temperature drop of the fluid supply line 2441 can reduce the damage to the substrate and maintain the substrate processing state more consistently between repeated supercritical drying processes.

[0108] The supply line heating unit 2450 can heat the fluid supply line 2441 using the heated heating fluid. Specifically, the supply line heating unit 2450 can cause the heated fluid to flow into the fluid supply line 2441, thereby heating the fluid supply line 2441. The heating fluid may include inert gases with low reactivity such as argon (Ar), helium (He), neon (Ne), and nitrogen (N2). When considering heat transfer efficiency, the heating fluid can also be a gas with high thermal conductivity among the inert gases. For example, the heating fluid may be nitrogen, which has a higher thermal conductivity than the processed fluid, i.e., carbon dioxide.

[0109] The supply line heating unit 2450 may include a fluid injection line 2451 for injecting heating fluid into a fluid supply line 2441, an injection line heater 2452 for heating the heating fluid injected into the fluid supply line 2441 along the fluid injection line 2451, and an injection line on / off valve 2453 provided on the fluid injection line 2451 to open and close the fluid injection line 2451 and regulate the flow rate of the heating fluid flowing along the fluid injection line 2451. The fluid injection line 2451 may be connected to the fluid supply line 2441 to inject heating fluid into the fluid supply line 2441. The injection line heater 2452 may be provided on the fluid injection line 2451 to heat the heating fluid flowing along the fluid injection line 2451.

[0110] If the heating fluid heated by the supply line heating unit 2450 is injected into the fluid supply line 2441, the fluid supply unit 2440 will operate due to the opening of the main valve 2447a, the first valve 2447b, and the second valve 2447c. At this time, the heating fluid injected into the fluid supply line 2441 can flow into the processing space 2411. Accordingly, the heated fluid can flow into the fluid supply line 2441 to heat the main line 2442, the first branch line 2443, and the second branch line 2444, and can flow into the processing space 2411 along the first branch line 2443 and the second branch line 2444 to adjust the temperature and humidity of the processing space 2411 to a level suitable for performing the second process.

[0111] The fluid injection line 2451 is connected between the check valve 2445 and the filter 2446 in the main line 2442. The heated fluid injected from the fluid injection line 2451 into the main line 2442 can flow into the processing space 2411 in a state where foreign matter has been removed by the filter 2446.

[0112] An example of the supercritical drying process performed in the second process chamber 2400 is as follows.

[0113] Before or after the supercritical process, in standby mode, the processing space 2411 can be sealed and the through-hole unit 2470 and the drainage unit 2480 can be closed. The standby mode is not limited to this; it can also be that the processing space 2411 is open and the through-hole unit 2470 is open.

[0114] In standby mode, the supply line heating unit 2450 operates, injecting heated fluid, heated by the injection line heater 2452, into the main line 2442. Before operating the supply line heating unit 2450, the main valve 2447a, the first valve 2447b, and the second valve 2447c are opened to open the fluid supply line 2441. The opening of the fluid supply line 2441 can occur simultaneously with or after the operation of the supply line heating unit 2450. At this time, the heated fluid flows along the fluid supply line 2441, heating the fluid supply line 2441, and flows into the processing space 2411, heating the processing space 2411 and regulating the humidity of the processing space 2411. For example, the heated fluid can be injected into the fluid supply line 2441 at a temperature above the critical temperature of the processing fluid. Alternatively, the temperature of the fluid supply line 2441 and the temperature of the processing space 2411 can be detected, and the temperature of the heated fluid can be raised to a further increased temperature based on the detected temperature.

[0115] If the fluid supply line 2441 and the processing space 2411 are filled with heated fluid, the operation of the supply line heating unit 2450 can be stopped. Alternatively, the operation of the supply line heating unit 2450 can be repeatedly stopped, and the heated fluid can be discharged from the processing space 2411 to the outside through the through-hole unit 2470, with additional heated fluid injected.

[0116] Subsequently, in order to perform a supercritical process, the through-hole unit 2470 can be activated to discharge the heating fluid from the fluid supply line 2441 and the processing space 2411 to the outside. Furthermore, a supercritical process can be performed.

[0117] In supercritical process mode, the supply line heating unit 2450 can also be activated and supplied as inert gas along with the heating fluid during the process of supplying the processing fluid to the processing space 2411 to form a supercritical atmosphere. At this time, the heating fluid injected into the fluid supply line 2441 can be heated by the injection line heater 2452 or not.

[0118] In the initial stage of the supercritical process, the temperature of the processing space 2411 may not have reached the critical temperature and critical pressure of the processing fluid. Therefore, the processing fluid can be supplied through the second branch line 2444 first. If the processing space 2411 reaches the critical state, it will be supplied through the first branch line 2443.

[0119] If a supercritical atmosphere is formed, the organic solvent remaining on the substrate can dissolve in the supercritical processing fluid. If the organic solvent is fully dissolved and the substrate is dried, the processing fluid can be discharged from the processing space 2411. On the other hand, in order to improve the dissolution efficiency of the organic solvent, the supply and venting of the processing fluid can be repeated.

[0120] Figure 6 This is a structural diagram illustrating the fluid supply module 3000 of a substrate processing apparatus according to an embodiment of the present invention.

[0121] Reference Figure 6 The fluid supply module 3000 may include a first tank 3100 for storing fluid to be supplied to the nozzle 2333 of the first process chamber 2300, a second tank 3200 for storing processing fluid to be supplied to the fluid supply line 2441 of the second process chamber 2400, and a third tank 3300 for storing heating fluid to be supplied to the fluid injection line 2451 of the second process chamber 2400.

[0122] Fluid from the first tank 3100 can be pressurized by pump 3101 and can be supplied to nozzle 2333 in a state where foreign matter has been removed by filter 3102. Fluid from the first tank 3100 can optionally be heated by heater 3103.

[0123] The processing fluid can be stored in a liquid state in the second tank 3200. Since the processing fluid, carbon dioxide, has a smaller volume in its liquid state compared to its gaseous state, more can be stored in the second tank 3200. Carbon dioxide from the second tank 3200 can be supplied to the supply tank 3210. A pump 3201 and a condenser 3202 are configured between the second tank 3200 and the supply tank 3210 to pressurize carbon dioxide from the second tank 3200 to the supply tank 3210, and to convert the carbon dioxide, which has converted to a gaseous state as the pressure decreases, back into a liquid state. The supply tank 3210 can be configured to heat and pressurize the incoming carbon dioxide. The carbon dioxide flowing into the supply tank 3210 can be converted back into a gaseous state and supplied to the fluid supply line 2441 under the heating and pressurization of the supply tank 3210. Alternatively, the carbon dioxide flowing into the supply tank 3210 can be heated above the critical temperature and pressurized above the critical pressure to be supplied to the fluid supply line 2441 in a supercritical state.

[0124] The substrate processing apparatus according to embodiments of the present invention may further include a control unit. The control unit can control the operation of the entire or a portion of the substrate processing apparatus according to embodiments of the present invention. The control unit can associate various information from the substrate processing apparatus according to embodiments of the present invention, perform computational processing on this information, and control the constituent elements of the substrate processing apparatus according to embodiments of the present invention. For example, the control unit can improve the efficiency of the supercritical drying process by monitoring and controlling the flow rate of the processing fluid supplied through the fluid supply unit 2440, the temperature and flow rate of the heating fluid injected through the supply line heating unit 2450, the temperature and humidity of the processing space 2411, etc. Such a control unit can be implemented as a computer or a similar device using software, hardware, or a combination thereof.

[0125] Figure 7 as well as Figure 8 These are structural diagrams illustrating variations of the second process chamber 2400 of the substrate processing apparatus according to embodiments of the present invention.

[0126] When with Figure 4 When compared with an example of the second process chamber 2400 shown, Figure 7 The variant of the second process chamber 2400 shown differs only in that it also includes a supply line heater 2448 for heating the process fluid flowing along the fluid supply line 2441; otherwise, the structure and operation are the same.

[0127] A supply line heater 2448 is provided on the main line 2442 of the fluid supply line 2441. The supply line heater 2448 is configured on the downstream side of the main line 2442 with reference to the portion connected to the fluid injection line 2451.

[0128] By using the supply line heater 2448, the processing fluid supplied to the processing space 2411 along the fluid supply line 2441 can be heated, thereby further shortening the supercritical atmosphere formation time. For example, when the processing fluid is supplied to the processing space 2411 in a supercritical state, the processing fluid can be heated to prevent its temperature from dropping below the critical temperature during the supply process; when the fluid is supplied to the processing space 2411 in a gaseous state, the processing fluid can be heated to raise its temperature above the critical temperature. Furthermore, with such a supply line heater 2448, particles that remain in the processing space 2411 in a dissolved state when the supercritical processing fluid is converted to a gaseous state can be further minimized, preventing the condensation of organic solvents that remain in the processing space 2411 in a dissolved state and fall onto the substrate.

[0129] The supply line heater 2448 can operate continuously even in standby mode. Therefore, in standby mode, the heating fluid in the injection fluid supply line 2441 can be reheated by the supply line heater 2448. Thus, the temperature drop of the heated fluid can be suppressed. Furthermore, the heating temperature of the supercritical supply line heater 2448 can be maintained relatively consistently between supercritical drying process modes. For example, the processing fluid for processing the first substrate may be heated to a relatively high temperature by the supply line heater 2448, while the processing fluid for processing the second substrate and subsequent substrates may be heated to a relatively low temperature by the supply line heater 2448 due to output limits, etc. However, if the heating fluid in the injection fluid supply line 2441 is heated by the supply line heater 2448 in standby mode, thus relatively lowering the heating temperature of the supply line heater 2448, the temperature difference between the processing fluid for processing the first substrate and the processing fluid for processing the second substrate and subsequent substrates can be significantly reduced, further maintaining the substrate processing state consistently.

[0130] When with Figure 4 An example of the second process chamber 2400 shown and Figure 7 When compared with the modified example of the second process chamber 2400 shown, Figure 8 The variant of the second process chamber 2400 shown differs only in that it also includes a fluid recovery unit 2460 that recovers the heated fluid from the processing space 2411 to the supply line heating unit 2450; otherwise, the structure and operation are the same.

[0131] The fluid recovery unit 2460 enables the recycling of heated fluid injected from the supply line heating unit 2450 into the fluid supply line 2441 and then into the processing space 2411. The fluid recovery unit 2460 may include a fluid recovery line 2461 connecting the supply line heating unit 2450 and the processing space 2411. One side of the fluid recovery line 2461 is connected upstream in the through-hole line 2471 with reference to the through-hole line on / off valve 2472, and the other side is connected upstream in the fluid injection line 2451 with reference to the injection line heater 2452, thereby enabling the heated fluid to be recovered from the processing space 2411 to the fluid injection line 2451 through the through-hole line 2471. The recovered heated fluid can be injected into the fluid supply line 2441 in a heated state by the injection line heater 2452. On the other hand, the fluid recovery unit 2460 may also include a recovery line on / off valve 2642 provided on the fluid recovery line 2461 to open and close the fluid recovery line 2461 and regulate the flow rate of the heated fluid recovered along the fluid recovery line 2461.

[0132] The present invention has been described above, but it is not limited to the disclosed embodiments and accompanying drawings. Those skilled in the art can make various modifications without departing from the inventive concept. Furthermore, the inventive concepts described in the embodiments can be implemented independently or in combination of two or more.

Claims

1. A substrate processing apparatus, comprising: The cavity provides a processing space for processing the substrate with a supercritical processing fluid; A substrate support unit supports the substrate in the processing space; A fluid supply unit includes a fluid supply line that supplies the processing fluid to the processing space; as well as The supply line heating unit injects heated fluid into the fluid supply line, which then flows along the fluid supply line to heat the fluid supply line through the heated fluid flowing along it. The fluid supply line includes: a main line; And a first branch line that branches off from the main line to supply the processing fluid to the upper part of the processing space and a second branch line that supplies the processing fluid to the lower part of the processing space. The supply line heating unit includes a fluid injection line that injects the heating fluid into the main line of the fluid supply line.

2. The substrate processing apparatus according to claim 1, characterized in that, The heating fluid includes an inert gas.

3. The substrate processing apparatus according to claim 1, characterized in that, The heating fluid includes an inert gas with a higher thermal conductivity than the processing fluid.

4. The substrate processing apparatus according to claim 1, characterized in that, The supply line heating unit operates in standby mode. The fluid supply unit opens the fluid supply line in the standby mode so that the heated fluid can be supplied to the processing space along the fluid supply line.

5. The substrate processing apparatus according to claim 4, characterized in that, The substrate processing apparatus further includes: The fluid recovery unit recovers the heating fluid flowing into the processing space and returns it to the supply line heating unit.

6. The substrate processing apparatus according to claim 1, characterized in that, The supply line heating unit includes: An injection line heater heats the heated fluid flowing along the fluid injection line.

7. The substrate processing apparatus according to claim 6, characterized in that, The fluid supply unit also includes: A supply line heater heats the processing fluid flowing along the fluid supply line.

8. The substrate processing apparatus according to claim 7, characterized in that, The supply line heater is provided downstream of the fluid supply line with reference to the portion connected to the fluid injection line.

9. The substrate processing apparatus according to claim 8, characterized in that, The fluid supply unit also includes: A filter is provided downstream of the fluid supply line, with reference to the portion connected to the fluid injection line.

10. The substrate processing apparatus according to claim 7, characterized in that, The supply line heater heats the processed fluid to above the critical temperature.

11. A substrate processing apparatus, comprising: The cavity provides a processing space for processing the substrate with a supercritical processing fluid; A chamber heater heats the processing space to above the critical temperature of the processing fluid; A substrate support unit supports the substrate in the processing space; The fluid supply unit has a fluid supply line for supplying the processing fluid to the processing space, and has a filter and a supply line on / off valve respectively provided on the fluid supply line; Through-hole unit, connected to the processing space; as well as The supply line heating unit includes a fluid injection line for injecting heating fluid into the fluid supply line, and an injection line heater and an injection line on / off valve respectively provided on the fluid injection line. The fluid injection line is connected upstream of the fluid supply line with reference to the filter. In standby mode, the supply line heating unit operates by injecting heated fluid into the fluid supply line and allowing it to flow along the fluid supply line, thereby heating the fluid supply line through the heated fluid flowing along the fluid supply line. In standby mode, the fluid supply unit also operates by opening and closing the supply line on / off valve to supply the heated fluid along the fluid supply line to the processing space. The fluid supply line includes: a main line; And a first branch line that branches off from the main line to supply the processing fluid to the upper part of the processing space and a second branch line that supplies the processing fluid to the lower part of the processing space. The fluid injection line is connected to the main line of the fluid supply line, and the heated fluid is injected into the main line and flows along the main line, the first branch line, and the second branch line.

12. The substrate processing apparatus according to claim 11, characterized in that, The fluid supply unit also includes: A supply line heater heats the processing fluid flowing along the fluid supply line to above a critical temperature.

13. The substrate processing apparatus according to claim 12, characterized in that, The filter is disposed on the main line, and the supply line on / off valves are respectively disposed on the main line, the first branch line, and the second branch line. The supply line heater is provided on the main line between the portion connected to the fluid injection line and the filter to heat the heating fluid in the standby mode.

14. The substrate processing apparatus according to claim 11, characterized in that, The substrate processing apparatus further includes: The fluid recovery unit, in the standby mode, recovers the heated fluid from the processing space to the supply line heating unit.

15. A substrate processing method, comprising processing a substrate with a supercritical processing fluid in a processing space of a cavity, the substrate processing method comprising: The first step is to inject heated fluid into the fluid supply line connected to the processing space in standby mode and allow it to flow along the fluid supply line to heat the fluid supply line by the heated fluid flowing along the fluid supply line. as well as The second step involves executing a supercritical process mode in which the processing fluid is supplied to the processing space through a heated fluid supply line to heat the processing space and process the substrate. The fluid supply line includes: a main line; And a first branch line that branches off from the main line to supply the processing fluid to the upper part of the processing space and a second branch line that supplies the processing fluid to the lower part of the processing space. The first step involves injecting heated fluid into the main line of the fluid supply line, causing the heated fluid to flow along the main line, the first branch line, and the second branch line.

16. The substrate processing method according to claim 15, characterized in that, The first step involves supplying the heated fluid to the processing space by allowing the heated fluid to flow into the fluid supply line while the fluid supply line is open.

17. The substrate processing method according to claim 16, characterized in that, The first step determines the heating temperature of the heating fluid based on at least one of the temperature of the fluid supply line and the temperature of the processing space.

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