Addressing transfer device
By combining the driving substrate of the addressing transfer device with the photoadhesive transfer head, selective transfer and defect repair of Micro-LEDs are achieved, solving the problems of low transfer efficiency and yield in the existing technology, and reducing costs and time.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- XIAMEN EXTREMELY PQ DISPLAY TECH CO LTD
- Filing Date
- 2021-12-15
- Publication Date
- 2026-07-10
Smart Images
Figure CN116264260B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor technology, and more particularly to an addressing transfer device. Background Technology
[0002] Micro-LED (Micro light-emitting diode) display technology boasts advantages such as high brightness, high response speed, low power consumption, and long lifespan, making it a hot research topic in the pursuit of next-generation display technologies. Currently, Micro-LEDs are difficult to grow directly on glass substrates and require transfer techniques to transfer them from a carrier substrate to the glass substrate. Commonly used transfer techniques include stamp transfer and laser transfer. However, stamp transfer can only perform fixed-position transfers and cannot handle mass repairs of random defects. Laser transfer requires point-by-point transfer and cannot perform selective transfers, resulting in lower transfer efficiency and yield. Summary of the Invention
[0003] Therefore, in order to overcome at least some of the defects and deficiencies in the prior art, embodiments of the present invention provide an addressing transfer device.
[0004] Specifically, in one aspect, an addressing and transfer device provided by an embodiment of the present invention includes: a light-emitting component and an adhesion component; wherein, the light-emitting component includes: a transfer substrate; a driving substrate disposed on one side of the transfer substrate; a plurality of debonding light sources disposed at intervals on the side of the driving substrate away from the transfer substrate and forming a plurality of interval regions on the driving substrate, the plurality of debonding light sources being electrically connected to the driving substrate, the driving substrate being used to light up or turn off a target debonding light source among the plurality of debonding light sources; and a plurality of baffles disposed in the plurality of interval regions; the adhesion component is disposed on the side of the light-emitting component away from the transfer substrate, the adhesion component being used to adhere microelectronic components and release the corresponding microelectronic components to the target substrate under the irradiation of the target debonding light source.
[0005] In one specific embodiment of the present invention, the adhesion assembly includes: a photoadhesive transfer head disposed on the side of the driving substrate away from the transfer substrate, and covering the plurality of deadhesive light sources and the plurality of barrier walls. The photoadhesive transfer head is used to adhere microelectronic components and release the corresponding microelectronic components to the target substrate under the irradiation of the target deadhesive light source.
[0006] In one specific embodiment of the present invention, the light-emitting component further includes: an adhesive layer disposed on the side of the barrier away from the driving substrate; the adhesion component includes: an adhesion substrate attached to the adhesive layer on the side away from the driving substrate; and a photoadhesive transfer head disposed on the side of the adhesion substrate away from the adhesive layer, the photoadhesive transfer head being used to adhere microelectronic components and release the corresponding microelectronic components to the target substrate under the irradiation of the target adhesive light source.
[0007] In one specific embodiment of the present invention, the barrier is a light-absorbing barrier or a reflective barrier.
[0008] In a specific embodiment of the present invention, the first light emission angle α of each of the debonding light sources satisfies α < arctan(p / H), where P is the distance between two adjacent debonding light sources and H is the minimum vertical distance between the light emission surface of the debonding light source and the surface of the photo-debonding transfer head away from the driving substrate.
[0009] In one specific embodiment of the present invention, the photoadhesive debonding transfer head includes a plurality of transfer head protrusions spaced apart from each other, the plurality of transfer head protrusions corresponding one-to-one with the plurality of debonding light sources and arranged opposite to each other.
[0010] In a specific embodiment of the present invention, the second light emission angle β of each of the unbonding light sources satisfies: β < 90° - arcsin(1 / n), where n is the refractive index of the transfer head protrusion.
[0011] In one specific embodiment of the present invention, the distance between two adjacent microelectronic components on the target substrate is an integer multiple of the distance between two adjacent debonding light sources.
[0012] In one specific embodiment of the present invention, the plurality of LED light points are infrared LED light sources, and the photodissolving adhesive transfer head is an infrared photodissolving adhesive transfer head.
[0013] In one specific embodiment of the present invention, the plurality of LED light points are ultraviolet LED light sources, and the photopolymerization adhesive transfer head is an ultraviolet photopolymerization adhesive transfer head.
[0014] As can be seen from the above, the embodiments of the present invention, by setting a driving substrate, multiple debonding light sources, and a photo-debonding transfer head on the addressing and transfer device, control the lighting or turning off of the target debonding light source among the multiple debonding light sources through the driving substrate. When the target debonding light source is lit, it illuminates the photo-debonding transfer head to release the corresponding microelectronic components, thereby achieving selective transfer of microelectronic components, improving transfer efficiency and yield, enabling selective defect repair, reducing the number of repairs and repair time, saving chip usage, and reducing process costs and materials. In addition, by setting baffles between the multiple debonding light sources, the phenomenon of microelectronic components falling off or being transferred to the wrong position due to large-angle lateral light leakage from the light sources is avoided, thereby improving the reliability of microelectronic component transfer. Attached Figure Description
[0015] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0016] Figure 1 This is a schematic diagram of the address transfer device provided in the first embodiment of the present invention;
[0017] Figure 2 This is another structural schematic diagram of the address transfer device provided in the first embodiment of the present invention;
[0018] Figures 3A-3C This is a schematic diagram of the address transfer process according to the first embodiment of the present invention;
[0019] Figure 4 This is a schematic diagram of the address transfer device provided in the second embodiment of the present invention;
[0020] Figure 5 This is another structural schematic diagram of the address transfer device provided in the second embodiment of the present invention;
[0021] Figure 6 This is another structural schematic diagram of the address transfer device provided in the second embodiment of the present invention;
[0022] Figures 7A-7C This is a schematic diagram of the address transfer process according to the second embodiment of the present invention. Detailed Implementation
[0023] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments described in the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the present invention.
[0024] It should be noted that all directional indicators (such as up, down, left, right, front, back, top, and bottom) in the embodiments of this invention are only used to explain the relative positional relationship and movement of the components in a specific posture (as shown in the attached figures). If the specific posture changes, the directional indicator will also change accordingly. Furthermore, the term "vertical" in the embodiments and claims refers to an angle of 90° between two components or a deviation of -5° to +5°, and the term "parallel" refers to an angle of 0° between two components or a deviation of -5° to +5°.
[0025] In the embodiments of this invention, descriptions involving "first," "second," etc., are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature.
[0026] [First Embodiment]
[0027] See Figure 1 The addressing and transfer device provided in the first embodiment of the present invention may include, for example, a light-emitting component and an adhesion component. The light-emitting component includes a transfer substrate 100, a driving substrate 200, a plurality of de-adhesion light sources 310 and a plurality of baffles 320. The adhesion component includes a photo-de-adhesion transfer head 600. The light-emitting component and the adhesion component are not limited to two separately prepared components. That is, the addressing and transfer device of this embodiment may be, for example, an integral structure.
[0028] Specifically, the transfer substrate 100 can be, for example, a substrate of a rigid material, such as a glass substrate, polymer substrate, sapphire substrate, ceramic substrate, etc.; the driving substrate 200 can be, for example, a TFT array substrate (i.e., an active switching array substrate), or for example, a CMOS (Complementary Metal Oxide Semiconductor) array substrate, and the driving substrate 200 is disposed on one side of the transfer substrate 100; the plurality of debonding light sources 310 can be, for example, an LED light-emitting array, and the debonding light source 310 can be, for example, an infrared LED light source, or for example, an ultraviolet LED light source, and the plurality of debonding light sources 310 are disposed at intervals on the side of the driving substrate 200 away from the transfer substrate 100, and the plurality of debonding light sources 310 are electrically connected to the driving substrate 200, and the driving substrate 200 can selectively control any one of the plurality of debonding light sources 310. The debonding light source 310, for example, is a target debonding light source among multiple debonding light sources 310, which can be lit or turned off by the driving substrate 200. The target debonding light source can be one or more debonding light sources, depending on the location of the microelectronic component to be transferred. The microelectronic component can be, for example, a Micro-LED, but it can also be other microelectronic devices. This embodiment of the invention is not limited to this. The barrier 320 can be, for example, a light-absorbing barrier or a reflective barrier. Specifically, it can be, for example, a black barrier, a high-reflectivity metal barrier, a black barrier covered with a high-reflectivity metal coating, or a plastic barrier. The material barrier is covered with a high-reflectivity metallic coating, etc. This is merely an example; by setting a barrier 320 between multiple debonding light sources 310, the phenomenon of microelectronic components falling off or being misplaced due to large-angle lateral light leakage from the light source is avoided, thus improving the reliability of microelectronic component transfer. The photo-debonding transfer head 600 can be, for example, an infrared photo-debonding transfer head or an ultraviolet photo-debonding transfer head. The type of the photo-debonding transfer head 600 corresponds to the type of the debonding light source 310. For example, when the debonding light source 310 is an infrared LED light source, the photo-debonding transfer head 600 is... The photoadhesive transfer head is an infrared photoadhesive dissolution transfer head. When the dissolution light source 310 is an ultraviolet LED light source, the photoadhesive transfer head 600 is an ultraviolet photoadhesive dissolution transfer head. The photoadhesive transfer head 600 is disposed on the driving substrate 200 and covers multiple dissolution light sources 310 and multiple baffles 320. Under the control of the driving substrate 200, the dissolution light source 310 can emit near-infrared light or near-ultraviolet light, for example. Under the illumination of the light source emitted by the dissolution light source 310, the viscosity of the photoadhesive transfer head 600 is reduced, thereby enabling the release of the microelectronic components to be transferred.In this way, by selectively illuminating the debonding light source 310 through the driving substrate 200, the viscosity of the photo-debonding transfer head 600 at the corresponding position is reduced, allowing the corresponding microelectronic components to be released. This achieves selective transfer of microelectronic components, improving the transfer efficiency. Furthermore, defective microelectronic components can be left unreleased during release, further improving the transfer yield. Selective defect repair can also be achieved through selective transfer of microelectronic components, reducing the number of repairs, repair time, chip usage, and process costs and materials. In addition, by setting baffles 320 between multiple debonding light sources 310, the phenomenon of microelectronic components falling off or being transferred to the wrong position due to large-angle lateral light leakage from the light source is avoided, improving the reliability of microelectronic component transfer.
[0029] In one specific embodiment of the present invention, the photopolymerization adhesive transfer head 600 may be, for example, as shown below. Figure 1 The planar structure shown, namely the photoadhesive transfer head 600, is a photoadhesive layer disposed on the side of the driving substrate 200 away from the transfer substrate 100 and covered with multiple deadhesive light sources 310 and multiple baffles 320. Because the multiple deadhesive light sources 310 are spaced apart, when a selected target deadhesive light source is illuminated, the adhesion of the photoadhesive layer at the position corresponding to the target deadhesive light source decreases, thereby releasing the microelectronic components adhered to that position. Optionally, the first emission angle α of each deadhesive light source 310 satisfies α < arctan(p / H), see [reference]. Figure 1 P is the distance between two adjacent debonding light sources 310, and H is the minimum perpendicular distance between the light-emitting surface of the debonding light source 310 and the surface of the photo-debonding transfer head 600 away from the driving substrate 200. In this way, heat transfer or light source irradiation crosstalk between adjacent positions of the photo-debonding transfer head 600 can be reduced when the debonding light source 310 is irradiated, thereby further improving the reliability of microelectronic component transfer.
[0030] In one specific embodiment of the present invention, the photopolymerization adhesive transfer head 600 may further include, for example, the following: Figure 2The multiple transfer head protrusions 610 shown extend away from the driving substrate 200. These protrusions may be spaced apart and correspond one-to-one with and opposite to the multiple adhesive dissolution light sources 310. For example, a photoadhesive dissolution transfer head 600 may include a photoadhesive dissolution planar layer 620 and multiple transfer head protrusions 610. The photoadhesive dissolution planar layer 620 is disposed on the side of the driving substrate 200 away from the transfer substrate 100 and covers the multiple adhesive dissolution light sources 310 and multiple baffles 320. The multiple transfer head protrusions 610 are spaced apart on the side of the photoadhesive dissolution planar layer 620 away from the driving substrate 200 and extend away from the driving substrate 200. Of course, this is merely an example, and the embodiments of the present invention are not limited thereto. By configuring the photoadhesive transfer head 600 with a structure comprising multiple transfer head protrusions 610 spaced apart from each other, an air layer is created between the protrusions 610. This further reduces heat transfer between adjacent protrusions 610 or crosstalk from the light source 310 to adjacent protrusions 610 during irradiation, thereby improving the reliability of microelectronic component transfer. Optionally, the first emission angle α of each debonding light source 310 satisfies α < arctan(p / H), see [reference]. Figure 1 P is the distance between two adjacent debonding light sources 310, and H is the minimum perpendicular distance between the light-emitting surface of the debonding light source 310 and the surface of the photo-debonding transfer head 600 away from the driving substrate 200. Furthermore, the light emission angle β of each debonding light source 310 satisfies: β < 90° - arcsin(1 / n), where n is the refractive index of the protrusion of the transfer head. In this way, when the debonding light source 310 emits light, it avoids an excessively large illumination range that could affect the viscosity of the photo-debonding transfer head 600 at locations other than the target location, thereby further improving the reliability of microelectronic component transfer.
[0031] See Figures 3A to 3C ,like Figure 3A As shown, a plurality of microelectronic components 710 to be transferred are disposed on the carrier substrate 700. The plurality of microelectronic components 710 are disposed on the carrier substrate 700 at intervals. The distance between two adjacent debonding light sources 310 can be, for example, equal to the distance between adjacent microelectronic components 710 on the carrier substrate 700. Of course, the specific settings can be made according to the actual situation, and the embodiments of the present invention are not limited thereto. Figure 3B As shown, the addressing and transfer device adheres the microelectronic component 710 to be transferred via a photoadhesive transfer head 600. The microelectronic component 710 can, for example, be adhered to the position on the photoadhesive transfer head 600 corresponding to the de-adhesive light source 310. Figure 3CAs shown, for example, if it is necessary to transfer a microelectronic component 710 to a target position on a target substrate 800, the drive substrate 200 of the addressing transfer device controls the corresponding target debonding light source 310 to be lit. After the target debonding light source 310 is lit, under the illumination of the light source, the viscosity at the position of the photoadhesive transfer head 600 corresponding to the target debonding light source 310 decreases, and the microelectronic component 710 adhered to the corresponding position of the photoadhesive transfer head 600 is released to the target position on the target substrate 800, thus completing the transfer of the microelectronic component 710. Preferably, the distance between two adjacent microelectronic components 710 on the target substrate 800 is an integer multiple of the distance between two adjacent debonding light sources 310, so as to... Figure 3C For example, the distance between two adjacent microelectronic components 710 on the target substrate 800 can be, for example, three times the distance between two adjacent debonding light sources 310. That is, there is a redundant position on the target substrate 800 where the microelectronic components 710 are located. Two more microelectronic components 710 can be placed in the redundant position. In this way, when the microelectronic components 710 placed on the target substrate 800 have defects, new microelectronic components 710 can be replaced in the redundant position by the addressing transfer device to ensure the quality of the microelectronic components on the target substrate 800 and further improve the transfer yield.
[0032] In summary, the embodiments of the present invention, by setting a driving substrate, multiple debonding light sources, and a photo-debonding transfer head on an addressing and transfer device, and controlling the lighting or turning off of a target debonding light source among the multiple debonding light sources via the driving substrate, illuminate the photo-debonding transfer head when the target debonding light source is lit, thereby releasing the corresponding microelectronic components. This achieves selective transfer of microelectronic components, improves transfer efficiency and yield, enables selective defect repair, reduces the number of repairs and repair time, saves chip usage, and reduces process costs and materials. Furthermore, by setting baffles between the multiple debonding light sources, the phenomenon of microelectronic components falling off or being transferred to the wrong position due to large-angle lateral light leakage from the light sources is avoided, thus improving the reliability of microelectronic component transfer.
[0033] [Second Embodiment]
[0034] See Figure 4 The second embodiment of the present invention provides an addressing and transfer device, which may include, for example, a light-emitting component 10 and an adhesion component 20, wherein the light-emitting component 10 and the adhesion component 20 together form the addressing and transfer device. The light-emitting component 10 includes a transfer substrate 100, a driving substrate 200, a plurality of de-adhesion light sources 310, a plurality of baffles 320, and an adhesive layer 400. The adhesion component 20 includes an adhesion substrate 500 and a photo-de-adhesion transfer head 600.
[0035] Specifically, the light-emitting component 10 includes a transfer substrate 100, a driving substrate 200, multiple debonding light sources 310, multiple barrier walls 320, and an adhesive layer 400. The transfer substrate 100 can be, for example, a substrate of a rigid material, such as a glass substrate, polymer substrate, sapphire substrate, or ceramic substrate. The driving substrate 200 can be, for example, a TFT array substrate (i.e., an active-mode switching array substrate), or, for example, a CMOS (Complementary Metal Oxide) array substrate. Semiconductor (Complementary Metal-Oxide-Semiconductor) array substrate, driving substrate 200 is disposed on one side of transfer substrate 100; multiple debonding light sources 310 can be, for example, an LED light-emitting array, specifically, infrared LED light sources or ultraviolet LED light sources, etc., are disposed at intervals on the side of driving substrate 200 away from transfer substrate 100, multiple debonding light sources 310 are electrically connected to driving substrate 200, driving substrate 200 can selectively control any one of the multiple debonding light sources 310, for example, by lighting or turning off a target debonding light source among the multiple debonding light sources 310. The target debonding light source can be one or more debonding light sources, specifically determined by the position of the microelectronic component to be transferred, the microelectronic component can be, for example, a Micro-LED, or other microelectronic devices. Examples are not limited to this; the barrier 320 can be, for example, a light-absorbing barrier or a reflective barrier, specifically, a black barrier, a high-reflectivity metal barrier, a black barrier covered with a high-reflectivity metal coating, or a plastic barrier covered with a high-reflectivity metal coating, etc. Of course, this is only an example. By setting the barrier 320 between multiple debonding light sources 310, the phenomenon of microelectronic components falling off or being transferred to the wrong position due to large-angle lateral light leakage of the light source is avoided, thereby improving the reliability of microelectronic component transfer; the adhesive layer 400 can be, for example, PDMS (Polydimethylsiloxane) adhesive material, or other adhesive materials. The adhesive layer 400 is provided with multiple barriers 320 on the side away from the driving substrate 200 to adhere the adhesion component 20. Of course, the adhesive layer 400 can also be, for example, provided on the side of the driving substrate 200 away from the transfer substrate 100 and covering multiple debonding light sources 310 to encapsulate the debonding light sources 310.
[0036] As described above, the adhesion assembly 20 includes an adhesion substrate 500 and a photoadhesive transfer head 600. The adhesion substrate 500 may be, for example, a light-transmitting substrate, specifically a glass substrate, a polymer substrate, a sapphire substrate, etc., but this embodiment of the invention is not limited thereto. The photoadhesive transfer head 600 may be, for example, an infrared photoadhesive transfer head or an ultraviolet photoadhesive transfer head. The type of the photoadhesive transfer head 600 corresponds to the type of the debonding light source 310. For example, when the debonding light source 310 is an infrared LED light source, the photoadhesive transfer head 600 is an infrared photoadhesive transfer head; when the debonding light source 310 is an ultraviolet LED light source, the photoadhesive transfer head 600 is an ultraviolet photoadhesive transfer head. The photoadhesive transfer head 600 is disposed on one side of the adhesion substrate 500 and is used to adhere to or release the microelectronic component to be transferred.
[0037] The light-emitting component 10 is adhered to the adhesive substrate 500 by the adhesive layer 400 to form an addressing transfer device. The de-adhesion light source 310 of the light-emitting component 10 can emit near-infrared light or near-ultraviolet light under the control of the driving substrate 200. The light emitted by the de-adhesion light source 310 passes through the adhesive layer 400 and the adhesive substrate 500 to illuminate the photo-de-adhesion transfer head 600. Under the illumination of the light source emitted by the de-adhesion light source 310, the viscosity of the photo-de-adhesion transfer head 600 is reduced, thereby enabling the release of the microelectronic component to be transferred. In this way, by selectively illuminating the de-adhesion light source 310 through the driving substrate 200, the viscosity of the photo-adhesive transfer head 600 at the corresponding position decreases, allowing the corresponding microelectronic components to be released. This achieves selective transfer of microelectronic components, improving transfer efficiency. Furthermore, defective microelectronic components can be left unreleased during release, further improving transfer yield. Selective defect repair is also possible through selective transfer, reducing repair frequency and time, saving chip usage, and lowering process costs and materials. Moreover, separating the light-emitting component 10 and the adhesion component 20 avoids the need to re-fabricate the addressing transfer device when the viscosity of the photo-adhesive transfer head 600 decreases or becomes unusable. After transferring the microelectronic components, a new adhesion component 20 can be quickly replaced, saving resources and further improving transfer efficiency. Furthermore, by setting a barrier 320 between multiple debonding light sources 310, the phenomenon of microelectronic components falling off or being transferred to the wrong position due to large-angle lateral light leakage from the light source is avoided, thereby improving the reliability of microelectronic component transfer.
[0038] In one specific embodiment of the present invention, the photopolymerization adhesive transfer head 600 may be, for example, as shown below. Figure 4 and Figure 5The planar structure shown, namely the photoadhesive transfer head 600, is a photoadhesive planar layer disposed on one side of the adhesion substrate 500. Preferably, the first light emission angle α of each debonding light source 310 satisfies α < arctan(p / H). See [link to relevant documentation]. Figure 5 P is the distance between two adjacent debonding light sources 310, and H is the minimum perpendicular distance between the light-emitting surface of the debonding light source 310 and the surface of the photo-debonding transfer head 600 away from the driving substrate 200. In this way, heat transfer or light source irradiation crosstalk between adjacent positions of the photo-debonding transfer head 600 can be reduced when the debonding light source 310 is irradiated, thereby further improving the reliability of microelectronic component transfer.
[0039] In one specific embodiment of the present invention, see Figure 6 The photoadhesive transfer head 600 may also include, for example, a plurality of transfer head protrusions 610. These protrusions extend away from the adhesion substrate 500 and may be spaced apart from each other, corresponding one-to-one with and opposite to the plurality of de-adhesive light sources. For instance, the photoadhesive transfer head 600 may include a photoadhesive planar layer 620 and a plurality of transfer head protrusions 610. The photoadhesive planar layer 620 is disposed on one side of the adhesion substrate 500, and the plurality of transfer head protrusions 610 are spaced apart from each other on the side of the photoadhesive planar layer 620 away from the adhesion substrate 500 and extend away from the adhesion substrate 500. The photoadhesive transfer head 600 may also consist of, for example, a plurality of transfer head protrusions 610 extending away from the adhesion substrate 500 and corresponding one-to-one with and opposite to the plurality of de-adhesive light sources 310. Of course, this is merely an example, and the embodiments of the present invention are not limited thereto. By configuring the photoadhesive transfer head 600 with a structure comprising multiple transfer head protrusions 610 spaced apart from each other, an air layer is created between the transfer head protrusions 610. This reduces heat transfer between adjacent transfer head protrusions 610 or crosstalk from the light source 310 to adjacent transfer head protrusions 610 during irradiation, thereby improving the reliability of microelectronic component transfer. Preferably, the first emission angle α of each debonding light source 310 satisfies α < arctan(p / H), see [reference]. Figure 5P is the distance between two adjacent debonding light sources 310, and H is the minimum perpendicular distance between the light-emitting surface of the debonding light source 310 and the surface of the photo-debonding transfer head 600 away from the driving substrate 200. Furthermore, the light emission angle β of each debonding light source 310 satisfies: β < 90° - arcsin(1 / n), where n is the refractive index of the protrusion of the transfer head. In this way, when the debonding light source 310 emits light, it avoids an excessively large illumination range that could affect the viscosity of the photo-debonding transfer head 600 at locations other than the target location, thereby further improving the reliability of microelectronic component transfer.
[0040] See Figures 7A to 7C The light-emitting component 10 adheres to the adhesive component 20 to form a shape such as Figure 7A The address transfer device shown, see also Figure 7A A plurality of microelectronic components 710 to be transferred are disposed on the carrier substrate 700. The plurality of microelectronic components 710 are disposed on the carrier substrate 700 at intervals. The distance between two adjacent debonding light sources 310 on the light-emitting component 10 can be, for example, equal to the distance between adjacent microelectronic components 710 on the carrier substrate 700. Of course, the specific setting can be made according to the actual situation, and the embodiments of the present invention are not limited thereto. Figure 7B As shown, the addressing and transfer device adheres the microelectronic component 710 to be transferred via the photoadhesive transfer head 600 on the adhesion assembly 20. The microelectronic component 710 can, for example, be adhered to the photoadhesive transfer head 600 at a position corresponding to the de-adhesive light source 310, specifically, the microelectronic component 710 can be adhered to multiple transfer head protrusions 610 of the photoadhesive transfer head 600. Figure 7C As shown, for example, if it is necessary to transfer a microelectronic component 710 to a target position on a target substrate 800, the corresponding target de-adhesion light source 310 is illuminated by the driving substrate 200 of the light-emitting component 10. After the target de-adhesion light source 310 is illuminated, the viscosity at the position of the photo-adhesive transfer head 600 corresponding to the target de-adhesion light source 310 decreases under the illumination of the light source, and the microelectronic component 710 adhered to the corresponding position of the photo-adhesive transfer head 600 is released to the target position on the target substrate 800, thus completing the transfer of the microelectronic component 710. When the transfer of the microelectronic component is completed, for example, when all the microelectronic components adhered to the photo-adhesive transfer head 600 have been transferred or released, or when the photo-adhesive transfer head 600 is no longer reusable, the adhesion component 20 is separated from the light-emitting component 10. Specifically, for example, a greater adhesive force than that between the light-emitting component 10 and the adhesion component 20 can be applied to the adhesion component 20 to separate the light-emitting component 10 and the adhesion component 20. When a new microelectronic component needs to be transferred, a new adhesion component 20 is then adhered through the light-emitting component 10. Preferably, the distance between two adjacent microelectronic components 710 on the target substrate 800 is an integer multiple of the distance between two adjacent debonding light sources 310 on the light-emitting component 10, so as to Figure 7CFor example, the distance between two adjacent microelectronic components 710 on the target substrate 800 can be, for example, three times the distance between two adjacent debonding light sources 310 on the light-emitting component 10. That is, there is a redundant position on the target substrate 800 where the microelectronic components 710 are located. Two more microelectronic components 710 can be placed in the redundant position. In this way, when there is a defect in the microelectronic component 710 placed on the target substrate 800, a new microelectronic component 710 can be replaced in the redundant position by the addressing transfer device to ensure the quality of the microelectronic components on the target substrate 800 and further improve the transfer yield.
[0041] In summary, this embodiment of the invention, by setting a driving substrate 200, multiple debonding light sources 310, and a photo-debonding transfer head 600 on the addressing and transfer device, controls the lighting or turning off of a target debonding light source among the multiple debonding light sources 310 through the driving substrate 200. When the target debonding light is lit, it illuminates the photo-debonding transfer head 600 to release the corresponding microelectronic component 710, thereby achieving selective transfer of microelectronic components, improving transfer efficiency and yield, enabling selective defect repair, reducing the number of repairs and repair time, saving chip usage, and reducing process costs and materials. Furthermore, by separately setting the light-emitting component 10 and the adhesion component 20, the adhesion component can be quickly replaced after the microelectronic component transfer is completed, avoiding the need to re-fabricate the addressing and transfer device when the adhesion of the photo-debonding transfer head is poor, saving resources and further improving transfer efficiency. Moreover, by setting a baffle 320 between the multiple debonding light sources 310, the phenomenon of microelectronic components falling off or being transferred to the wrong position due to large-angle lateral light leakage from the light source is avoided, improving the reliability of microelectronic component transfer.
[0042] Furthermore, it is understood that the foregoing embodiments are merely illustrative examples of the present invention. Provided that the technical features do not conflict, the structure is not contradictory, and the purpose of the invention is not violated, the technical solutions of the various embodiments can be arbitrarily combined and used.
[0043] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims
1. An addressing transfer device, characterized in that, include: Light-emitting components and adhesive components; The light-emitting components include: Transfer substrate; A driving substrate is disposed on one side of the transfer substrate; Multiple debonding light sources are disposed at intervals on the side of the driving substrate away from the transfer substrate, and multiple interval regions are formed on the driving substrate. The multiple debonding light sources are electrically connected to the driving substrate, and the driving substrate is used to illuminate or deactivate a target debonding light source among the multiple debonding light sources; and Multiple baffles are disposed on the multiple spaced areas of the driving substrate, and the height of the baffles is greater than the height between the light-emitting surface of the debonding light source and the driving substrate. The adhesion component is disposed on the side of the light-emitting component away from the transfer substrate. The adhesion component is used to adhere microelectronic components and release the corresponding microelectronic components to the target substrate under the illumination of the target debonding light source. The adhesion assembly includes a photoadhesive transfer head disposed on the side of the driving substrate away from the transfer substrate, and covering the plurality of deadhesive light sources and the plurality of barrier walls. The photoadhesive transfer head is used to adhere microelectronic components and release the corresponding microelectronic components to the target substrate under the irradiation of the target deadhesive light source.
2. The addressing and transfer device as described in claim 1, characterized in that, The light-emitting component further includes: an adhesive layer disposed on the side of the barrier away from the driving substrate; The adhesion assembly further includes: an adhesion substrate attached to the adhesive layer on the side away from the driving substrate; and a photodegradation adhesive transfer head disposed on the side of the adhesion substrate away from the adhesive layer.
3. The addressing and transfer device as described in claim 1, characterized in that, The barrier is a light-absorbing barrier or a reflective barrier.
4. The addressing and transfer device as described in claim 1 or 2, characterized in that, The photoadhesive transfer head includes a plurality of transfer head protrusions spaced apart from each other, and the plurality of transfer head protrusions correspond one-to-one with the plurality of adhesive dissolution light sources and are arranged opposite to each other.
5. The addressing and transfer device as described in claim 1, characterized in that, The distance between two adjacent microelectronic components on the target substrate is an integer multiple of the distance between two adjacent debonding light sources.
6. The addressing and transfer device as described in claim 1 or 2, characterized in that, The plurality of adhesive dissolving light sources are infrared LED light sources, and the optical adhesive dissolving transfer head is an infrared optical adhesive dissolving transfer head.
7. The addressing and transfer device as described in claim 1 or 2, characterized in that, The plurality of adhesive dissolution light sources are ultraviolet LED light sources, and the photo-dissolution transfer head is an ultraviolet photo-dissolution transfer head.