Semiconductor manufacturing apparatus and method of manufacturing the same

Abstract

Embodiments provide a semiconductor manufacturing apparatus capable of appropriately bonding substrates to each other and a manufacturing method thereof. The semiconductor manufacturing apparatus of the embodiments includes a magnification difference acquisition unit that acquires a value of a magnification difference between a first substrate and a second substrate. The apparatus also includes a deformation amount determination unit that determines a value of a deformation amount of a chuck that holds the first substrate or the second substrate, based on the value of the magnification difference. The apparatus also includes a gap determination unit that determines a value of a gap between the first substrate and the second substrate, based on the value of the deformation amount. The apparatus also includes a bonding control unit that controls the deformation amount to the determined value and controls the gap to the determined value before bonding the first substrate and the second substrate.

Description

[0001] This application enjoys priority based on Japanese Patent Application No. 2021-204521 (filed on December 16, 2021). This application incorporates the entire contents of that basic application by reference. Technical Field

[0002] Embodiments of this disclosure relate to a semiconductor manufacturing apparatus and a manufacturing method thereof. Background Technology

[0003] When bonding substrates together, there may be cases where the suction cup holding one substrate is deformed to correct the magnification difference between these substrates. In this case, if the deformation of the suction cup is too large or too small, the substrates may not be able to be bonded together properly. Summary of the Invention

[0004] The problem to be solved by the invention is to provide a semiconductor manufacturing apparatus and a manufacturing method thereof capable of fitting substrates together appropriately.

[0005] The semiconductor manufacturing apparatus of this embodiment includes a magnification difference acquisition unit that acquires a value of the magnification difference between a first substrate and a second substrate. The apparatus further includes a deformation amount determination unit that determines a value of the deformation amount of a suction cup holding the first substrate or the second substrate based on the value of the magnification difference. The apparatus further includes a gap determination unit that determines a value of the gap between the first substrate and the second substrate based on the value of the deformation amount. The apparatus further includes a bonding control unit that controls the deformation amount to the determined value and controls the gap to the determined value before bonding the first substrate and the second substrate. Attached Figure Description

[0006] Figure 1 This is a cross-sectional view showing a method for manufacturing a semiconductor device according to the first embodiment.

[0007] Figure 2 This is a top view showing the structure of the semiconductor manufacturing apparatus according to the first embodiment.

[0008] Figure 3 This is a cross-sectional view showing the structure of the processing block 25 in the first embodiment.

[0009] Figure 4 This is a cross-sectional view showing the structure of the upper suction cup 51, etc., according to the first embodiment.

[0010] Figure 5 This is a cross-sectional view showing the structure of the lower suction cup 52 and the like in the first embodiment.

[0011] Figure 6 This is a cross-sectional view showing the operation of the semiconductor manufacturing apparatus according to the first embodiment.

[0012] Figure 7 This is a cross-sectional view showing the operation of a semiconductor manufacturing apparatus of a comparative example of the first embodiment.

[0013] Figure 8 This is an enlarged cross-sectional view showing the operation of a semiconductor manufacturing apparatus of a comparative example of the first embodiment.

[0014] Figure 9 This is a cross-sectional view showing the operation of the semiconductor manufacturing apparatus according to the first embodiment.

[0015] Figure 10 This is a coordinate diagram used to illustrate the operation of the semiconductor manufacturing apparatus of the first embodiment.

[0016] Figure 11 This is a flowchart illustrating the operation of the semiconductor manufacturing apparatus according to the first embodiment.

[0017] Figure 12 This is a block diagram showing the functional structure of the control unit 30 in the first embodiment.

[0018] Figure 13 This is a cross-sectional view showing a method for manufacturing a semiconductor device according to a modified example of the first embodiment.

[0019] Figure 14 This is a cross-sectional view showing a method for manufacturing a semiconductor device, which is another variation of the first embodiment.

[0020] Explanation of reference numerals in the attached figures

[0021] 1: Wafer loading, 1': Wafer loading, 1a: Wafer, 1b: Interlayer insulating film, 1c: Metal pad, 2: Wafer unloading, 2': Wafer unloading, 2a: Wafer, 2b: Interlayer insulating film, 2c: Metal pad, 3: Mounted wafer, 4: Box, 5: Box, 6: Box, 10: Wafer transport section, 11: Mounting section, 11a: Mounting stage, 12: Transport section, 12a: Transport path, 12b: Transport robot, 20: Wafer processing section. 21: Transfer block, 21a: Transfer robot, 22: Processing block, 23: Processing block, 24: Processing block, 25: Processing block, 25a: Inner wall, 25b: Entrance / exit, 30: Control unit, 40: Transfer area, 41: Transfer module, 42: Position adjustment module, 42a: Base, 42b: Detection unit, 43: Flipping module, 43a: Holding arm, 43b: Holding component, 43c: Drive unit, 43d: Support column, 50 51: Fitting area; 52: Upper suction cup; 53: Lower suction cup; 54: Upper suction cup support; 55: Upper imaging part; 56: Support member; 57: Support column; 58: Striker; 59: Lower suction cup moving part; 50: Lower imaging part; 51: Track; 52: Lower suction cup moving part; 53: Track; 54: Platform; 55: Through hole; 66: Suction tube; 67: Suction tube; 68: Actuator. 65: Cylinder; 66: Vacuum pump; 67: Vacuum pump; 71: Base; 72: Mounting section; 73: Measuring section; 74: Suction tube; 75: Vent hole; 76: Vacuum pump; 77: Deformation section; 77a: Switching valve; 77b: Regulator; 77c: Vacuum pump; 81: Magnification difference acquisition section; 82: Deformation amount determination section; 83: Gap determination section; 84: Pressing pressure determination section; 85: Fitting control section. Detailed Implementation

[0022] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Figures 1 to 14 In this document, the same reference numerals are used to label the same structure in the attached drawing, and repeated descriptions are omitted.

[0023] (First Embodiment)

[0024] Figure 1 This is a cross-sectional view showing a method for manufacturing a semiconductor device according to the first embodiment.

[0025] The semiconductor device in this embodiment will... Figure 1 (a) shows the upper wafer 1 and Figure 1 The lower wafer 2 shown in (b) is manufactured by bonding. The upper wafer 1 is an example of a first substrate, and the lower wafer 2 is an example of a second substrate. Figure 1 (c) shows a bonded wafer 3 comprising an upper wafer 1 and a lower wafer 2 bonded together. The bonded wafer 3 is then diced into multiple chips (semiconductor devices).

[0026] Figure 1 (a)~ Figure 1 (c) shows the mutually perpendicular X, Y, and Z directions. In this specification, the +Z direction is treated as the upward direction, and the -Z direction as the downward direction. The -Z direction may or may not be aligned with the direction of gravity.

[0027] like Figure 1 As shown in (a), the upper wafer 1 includes a wafer 1a, an interlayer insulating film 1b formed on the wafer 1a, and a plurality of metal pads 1c formed within the interlayer insulating film 1b. The wafer 1a is, for example, a semiconductor wafer such as a Si (silicon) wafer. The interlayer insulating film 1b is, for example, a stacked insulating film including a SiO2 film (silicon oxide film), a SiN film (silicon nitride film), etc. The interlayer insulating film 1b may include various devices such as memory cell arrays and transistors, and may also include various conductive layers such as wiring layers and plug layers. The metal pads 1c are, for example, metal layers including a Cu (copper) layer.

[0028] like Figure 1 As shown in (b), the lower wafer 2 includes a wafer 2a, an interlayer insulating film 2b formed on the wafer 2a, and a plurality of metal pads 2c formed within the interlayer insulating film 2b. The materials and structures of the wafer 2a, the interlayer insulating film 2b, and the metal pads 2c are the same as those of the wafer 1a, the interlayer insulating film 1b, and the metal pads 1c. For example, the upper wafer 1 has a memory cell array, and the lower wafer 2 has transistors for controlling the memory cell array.

[0029] like Figure 1 As shown in (c), the bonded wafer 3 includes a lower wafer 2 and an upper wafer 1 disposed on the lower wafer 2. Figure 1 The orientation of the upper wafer 1 shown in (c) is the same as... Figure 1 The orientation of the upper wafer 1 shown in (a) is opposite. Figure 1 In (c), the lower surface of the interlayer insulating film 1b is bonded to the upper surface of the interlayer insulating film 2b, and the lower surface of each metal pad 1c is bonded to the upper surface of the corresponding metal pad 2c.

[0030] When manufacturing the semiconductor device of this embodiment, there are cases where the magnification of the pattern formed on wafer 1a and the magnification of the pattern formed on wafer 2a are different. For example, there are cases where the magnification of metal pad 1c and metal pad 2c are different. In this case, each metal pad 1c may not properly bond with the corresponding metal pad 2c, which may result in poor bonding such as high resistance at the bonding site and broken wires.

[0031] Therefore, during the manufacture of the semiconductor device of this embodiment, the chuck holding the upper wafer 1 or the lower wafer 2 is deformed to correct the magnification difference between the upper wafer 1 and the lower wafer 2. Then, with the chuck deformed, the upper wafer 1 and the lower wafer 2 are bonded together. This allows for proper bonding of each metal pad 1c to its corresponding metal pad 2c. For example, alignment deviations of approximately 0 to 10 ppm can be corrected. Further details regarding the correction of the magnification difference will be described later.

[0032] Figure 2 This is a top view showing the structure of the semiconductor manufacturing apparatus according to the first embodiment. The semiconductor manufacturing apparatus of this embodiment is a bonding apparatus for bonding an upper wafer 1 and a lower wafer 2.

[0033] like Figure 2 As shown, the semiconductor manufacturing apparatus of this embodiment includes a wafer transport unit 10, a wafer processing unit 20, and a control unit 30. The wafer transport unit 10 transports upper wafers 1 and lower wafers 2 from outside the housing of the semiconductor manufacturing apparatus into the housing, and transports pre-bonded wafers 3 from inside the housing of the semiconductor manufacturing apparatus to the outside. The wafer processing unit 20 processes the upper wafers 1, lower wafers 2, and pre-bonded wafers 3, for example, by bonding the upper wafers 1 and lower wafers 2. The control unit 30 controls various operations of the semiconductor manufacturing apparatus, for example, controlling the transport of each wafer by the wafer transport unit 10 and the processing of each wafer by the wafer processing unit 20.

[0034] The chip transport unit 10 includes a mounting unit 11 for mounting each chip and a transport unit 12 for transporting each chip. The mounting unit 11 includes multiple mounting tables 11a. The transport unit 12 includes a transport path 12a and a transport robot 12b.

[0035] The mounting stage 11a is used to mount the cassette 4 containing the upper wafer 1, the cassette 5 containing the lower wafer 2, and the cassette 6 containing the wafer 6 that has been bonded together. Figure 2 The two boxes 6 shown are for accommodating normal bonded wafers 3 and for accommodating abnormal bonded wafers 3.

[0036] The transport path 12a extends in the X direction. The transport robot 12b is capable of moving in the ±X direction on the transport path 12a and rotating in the ±θ direction around the Z direction on the transport path 12a. The transport robot 12b is capable of transporting wafers between the mounting stage 11a located in the -Y direction and the wafer processing unit 20 located in the +Y direction. Thus, wafers can be moved into the interior of the housing and wafers can be moved out of the housing.

[0037] The chip processing unit 20 includes a transfer block 21 for transporting individual chips and processing blocks 22, 23, 24, and 25 for processing individual chips. The transfer block 21 includes a transfer robot 21a.

[0038] The transport robot 21a within transport block 21 can transport wafers between wafer transport section 10 and processing blocks 22-25. Processing block 22 moves the upper wafer 1, lower wafer 2, and bonded wafer 3 in the ±Z directions. Processing block 23 modifies the surfaces of the upper wafer 1 and lower wafer 2. Processing block 24 hydrophilizes the surfaces of the upper wafer 1 and lower wafer 2. Processing block 25 bonds the upper wafer 1 and lower wafer 2 together.

[0039] Figure 3 This is a cross-sectional view showing the structure of the processing block 25 in the first embodiment.

[0040] The processing block 25 includes a transport area 40 and a bonding area 50 separated by an inner wall 25a of the processing block 25. The transport area 40 and the bonding area 50 are connected by an inlet / outlet 25b provided on the inner wall 25a. The transport area 40 is used to transport the wafers between the inside and outside of the processing block 25. The bonding area 50 is used to bond the upper wafer 1 and the lower wafer 2. The bonding area 50 is an example of a bonding section.

[0041] The conveying area 40 includes a conveying module 41, a position adjustment module 42, and a flipping module 43. The position adjustment module 42 includes a base 42a and a detection unit 42b. The flipping module 43 includes a holding arm 43a, multiple holding members 43b, a drive unit 43c, and a support column 43d.

[0042] The transport module 41 transports the wafers in the X, Y, and Z directions. Specifically, the transport module 41 transports the upper wafer 1 and the lower wafer 2 from the outside of the bonding area 50 into the inside, and transports the bonded wafer 3 from the inside of the bonding area 50 to the outside.

[0043] The position adjustment module 42 adjusts the orientation of the notch on each wafer. Specifically, the position adjustment module 42 uses a base 42a to support the wafer, uses a detection unit 42b to detect the position of the notch on the wafer on the base 42a, and rotates the wafer using the base 42a according to the detected notch position. As a result, the orientation of the notch is adjusted.

[0044] The flip module 43 flips the orientation of the upper wafer 1. Specifically, the flip module 43 holds the upper wafer 1 using a holding member 43b on a holding arm 43a, and flips the orientation of the upper wafer 1 using the holding arm 43a. The holding arm 43a is supported by a support column 43d via a drive unit 43c and is driven by the drive unit 43c. As a result, the orientation of the upper wafer 1 is flipped. For example, if the metal pads 1c of the upper wafer 1 are facing the +Z direction before flipping, the metal pads 1c of the upper wafer 1 are facing the -Z direction after flipping.

[0045] The contact area 50 includes an upper suction cup 51, a lower suction cup 52, an upper suction cup support 53, a lower suction cup moving part 54, two tracks 55 extending in the Y direction, a lower suction cup moving part 56, two tracks 57 extending in the X direction, and a mounting platform 58. The upper suction cup support 53 includes an upper shooting part 53a, a support member 53b, multiple support pillars 53c, and an impactor 53d. The lower suction cup moving part 54 includes a lower shooting part 54a. The upper suction cup support 53 is an example of a first support part. The lower suction cup moving part 54, tracks 55, lower suction cup moving part 56, tracks 57, and mounting platform 58 are examples of a second support part. The impactor 53d is an example of a pressing part.

[0046] The upper suction cup 51 is supported by the upper suction cup support 53, holding the upper wafer 1 from above. The upper suction cup support 53 is provided on the top surface of the container of the processing block 25, supporting the upper suction cup 51 from above. Specifically, the upper suction cup support 53 supports the upper suction cup 51 using a support member 53b, and the support member 53b is supported by a pillar 53c. An upper imaging unit 53a is provided on the support member 53b to image the lower wafer 2. This allows the state of the lower wafer 2 to be detected. An impactor 53d is provided on the support member 53b to press the upper wafer 1. This allows the upper wafer 1 and the lower wafer 2 to be bonded together.

[0047] The lower suction cup 52 is supported by the lower suction cup moving part 54, the track 55, the lower suction cup moving part 56, the track 57, and the mounting stage 58, holding the lower wafer 2 from below. The lower suction cup moving part 54, the track 55, the lower suction cup moving part 56, the track 57, and the mounting stage 58 are provided on the floor surface of the container of the processing block 25, supporting the lower suction cup 52 from below. The lower suction cup moving part 54 can move the lower suction cup 52 in the ±Y direction by moving on the track 55 provided on the lower suction cup moving part 56. The lower suction cup moving part 56 can move the lower suction cup 52 in the ±X direction by moving on the track 57 provided on the mounting stage 58. Furthermore, the lower suction cup moving part 54 can raise, lower lower, and rotate the lower suction cup 52 by moving in the ±Z direction and rotating about an axis parallel to the Z direction. As a result, the gap between the upper wafer 1 and the lower wafer 2 can be increased or decreased. The lower imaging unit 54a is provided on the lower suction cup moving unit 54 to capture images of the upper wafer 1. As a result, the state of the upper wafer 1 can be detected.

[0048] Figure 4 This is a cross-sectional view showing the structure of the upper suction cup 51, etc., according to the first embodiment.

[0049] like Figure 4 As shown, the bonding area 50 of this embodiment also includes a through hole 61, a plurality of suction tubes 62, a plurality of suction tubes 63, an actuator 64, a cylinder 65, a vacuum pump 66, and a vacuum pump 67.

[0050] The through-hole 61 extends through the upper suction cup 51 and the support member 53b. The actuator 64 and the cylinder 65 constitute an impactor 53d that presses the upper wafer 1. Specifically, the cylinder 65 is disposed on the support member 53b. The actuator 64 includes an upper part disposed within the cylinder 65 and a lower part disposed within the through-hole 61. If the upper part of the actuator 64 moves up and down within the cylinder 65, the lower part of the actuator 64 also moves up and down within the through-hole 61. As a result, the lower part of the actuator 64 presses against the upper wafer 1 held by the upper suction cup 51. The impactor 53d of this embodiment is driven by air supplied by an regulator (not shown).

[0051] Suction tubes 62 and 63 pass through the upper suction cup 51 for attracting the upper wafer 1. In this embodiment, the upper suction cup 51 holds the upper wafer 1 by attracting it from the suction tubes 62 and 63. Vacuum pumps 66 and 67 are connected to the suction tubes 62 and 63 respectively, and a vacuum is drawn from the suction tubes 62 and 63 onto the upper wafer 1. The upper wafer 1 is held by this vacuuming action. In this embodiment, the bonding area 50 can drive the vacuum pumps 66 and 67 independently. The suction tubes 62 and 63 and the vacuum pumps 66 and 67 are examples of suction units.

[0052] In this embodiment, the contact area 50 allows upward forces to act on the wafer 1 from the suction tubes 62 and 63, and downward forces to act on the wafer 1 from the actuator 64 (impactor 53d). Further details regarding these forces will be described later.

[0053] Figure 5 This is a cross-sectional view showing the structure of the lower suction cup 52 and the like in the first embodiment.

[0054] Figure 5 (a) and Figure 5 (b) shows the same lower suction cup 52 in a different state. See below for reference. Figure 5 The details of the lower suction cup 52 will be explained in section (a). References will also be made appropriately to this description. Figure 5 (b)

[0055] like Figure 5 As shown in (a), the lower suction cup 52 of this embodiment includes a base 71, a mounting portion 72, a measuring portion 73, multiple suction tubes 74, and a vent 75. Furthermore, the contact area 50 of this embodiment also includes a vacuum pump 76 and a deformable portion 77 as components for the lower suction cup 52. The deformable portion 77 includes a switching valve 77a, a regulator 77b, and a vacuum pump 77c.

[0056] The substrate 71 supports the mounting portion 72, which holds the lower wafer 2, from below. A space S exists between the substrate 71 and the mounting portion 72. The mounting portion 72, viewed from above, has a diameter greater than or equal to the diameter of the lower wafer 2. Figure 5As shown in (a), the thickness of the mounting portion 72 is thicker closer to the center of the mounting portion 72 and thinner further away from the center of the mounting portion 72. The mounting portion 72 is formed of, for example, a ceramic material.

[0057] The mounting section 72 can be as Figure 5 (a) and Figure 5 As shown in (b), the deformation is as described. In this embodiment, the bonding area 50 deforms the mounting portion 72, allowing the lower wafer 2 mounted on the mounting portion 72 to deform. This corrects the magnification difference between the upper wafer 1 and the lower wafer 2. In this embodiment, the bonding area 50, by bonding the upper wafer 1 and the lower wafer 2 while the lower wafer 2 is deformed using the mounting portion 72, corrects alignment misalignment between the metal pads 1c and 2c. Figure 5 The mounting portion 72 shown in (a) has a flat upper surface, resulting in the lower wafer 2 also having a flat shape. Figure 5 The mounting portion 72 shown in (b) has an upper surface that is bent into an upward convex shape, and as a result, the shape of the lower wafer 2 is also bent into an upward convex shape.

[0058] A measuring unit 73 is disposed at the center of the base 71 to measure the displacement (deformation) of the mounting portion 72. A suction tube 74 passes through the base 71 and the mounting portion 72 and is used to attract the lower wafer 2. In this embodiment, the lower suction cup 52 holds the lower wafer 2 by attracting it from the suction tube 74. A vacuum pump 76 is connected to the suction tube 74 and evacuates the lower wafer 2 through the suction tube 74. The lower wafer 2 is held by this evacuation.

[0059] A vent 75 extends through the base 71 for supplying air to and venting air from the space S. The deformable section 77 deforms the mounting section 72 by supplying air to and venting air from the space S. Specifically, the deformable section 77 uses an regulator 77b to supply air to the space S and a vacuum pump 77c to vent air from the space S. Switching between air supply and venting is achieved using a switching valve 77a.

[0060] Figure 6 This is a cross-sectional view showing the operation of the semiconductor manufacturing apparatus according to the first embodiment. Figure 6 (a)~ Figure 6 (d) shows the case where the upper wafer 1 held by the upper suction cup 51 and the lower wafer 2 held by the lower suction cup 52 are bonded together.

[0061] Figure 6 (a) shows the upper wafer 1 and lower wafer 2 before bonding begins. Figure 6 (a) shows the suction tube 62 ( Figure 4 The upward force Fa acting on the wafer 1 and from the suction tube 63 ( Figure 4The attractive force Fb acting on the upper wafer 1. At this point in time, the impactor 53d is not in contact with the upper wafer 1, and no pressure is applied to the upper wafer 1 from the impactor 53d.

[0062] Figure 6 (a) also shows the gap G between the upper wafer 1 and the lower wafer 2 before bonding begins. In this embodiment, the gap G corresponds to the distance between the lower surface of the upper wafer 1 and the upper surface of the lower wafer 2 (see reference). Figure 14 ). Figure 6 The gap G shown in (a) is the distance between the center of the upper wafer 1 and the center of the lower wafer 2. The center of the upper wafer 1 is the part on the central axis of the upper wafer 1, and the center of the lower wafer 2 is the part on the central axis of the lower wafer 1.

[0063] It should be noted that, Figure 6 The lower wafer 2 shown in (a) can also be deformed by the mounting part 72. By bonding the lower wafer 2 in a deformed state, the magnification difference between the upper wafer 1 and the lower wafer 2 can be corrected.

[0064] When bonding the upper wafer 1 and the lower wafer 2, stop the vacuum pump 66. Figure 4 Stop the vacuum pumping from suction tube 62. Then, while using suction tube 63 to attract wafer 1, use impactor 53d to press wafer 1 onto the surface. Figure 6 (b)). In this embodiment, the impactor 53d presses against the center of the upper wafer 1 relative to the center of the lower wafer 2, and the suction tube 63 attracts the portion other than the center of the upper wafer 1. Therefore, the bonding between the upper wafer 1 and the lower wafer 2 progresses from the center of the upper wafer 1 and the lower wafer 2 to the outer periphery. That is, the contact area between the upper wafer 1 and the lower wafer 2 extends from the center of the upper wafer 1 and the lower wafer 2 to the outer periphery.

[0065] The fitting process stops after it has progressed. This is called the waiting state. Figure 6 (b) shows the upper wafer 1 and lower wafer 2 in a waiting state.

[0066] In the semiconductor manufacturing apparatus of this embodiment, if bonding reaches a waiting state, the vacuum pump 67 is stopped while the wafer 1 is being pressed by the impactor 53d. Figure 4 The vacuum pumping from suction tube 63 is stopped. As a result, the upper wafer 1 falls onto the lower wafer 2, further improving the bonding between the upper wafer 1 and the lower wafer 2. Figure 6 (c)).

[0067] Thus, the bonding of the upper wafer 1 and the lower wafer 2 progresses to the ends of the upper wafer 1 and the lower wafer 2, and the bonding ends. Figure 6 (d) Figure 6(d) shows the bonded wafer 3 obtained by bonding the upper wafer 1 and the lower wafer 2.

[0068] Here, the control unit 30 of this embodiment ( Figure 1 The action is explained.

[0069] Before bonding begins, the control unit 30 obtains the magnification difference between the upper wafer 1 and the lower wafer 2. Furthermore, the control unit 30 determines the deformation amount of the mounting unit 72 (lower suction cup 52) based on the magnification difference, determines the gap G based on the deformation amount, and determines the pressing force of the impactor 53d based on the gap G.

[0070] Before bonding begins, the control unit 30 controls the deformation of the mounting portion 72 to the value determined above, and also controls the gap G between the upper wafer 1 and the lower wafer 2 to the value determined above. Furthermore, the control unit 30 controls the movement of the bonding area 50, such as... Figure 6 (a)~ Figure 6 As shown in (d), the upper wafer 1 and the lower wafer 2 are bonded together. During this bonding process, the control unit 30 controls the deformation of the mounting unit 72 to the value determined above, and controls the pressing force of the impactor 53d to the value determined above. Furthermore, the gap G between the upper wafer 1 and the lower wafer 2 is controlled at the beginning of the bonding process (…). Figure 6 The value determined above is set at the time point shown in (a).

[0071] According to this embodiment, by controlling the deformation amount, gap G, and pressing force to these values, the upper wafer 1 and the lower wafer 2 can be suitably bonded together. Further details regarding this effect will be described later.

[0072] [Comparative Example]

[0073] Figure 7 This is a cross-sectional view showing the operation of a semiconductor manufacturing apparatus of a comparative example of the first embodiment.

[0074] Figure 7 of (a), Figure 7 (b) and Figure 7 (c) shows Figure 6 The upper wafer 1 and lower wafer 2 are shown in (b) in a waiting state. Lines A1 and A2 pass through the areas near the ends of the upper wafer 1 and lower wafer 2. Lines B1 and B2 pass through the areas between the center and the ends of the upper wafer 1 and lower wafer 2.

[0075] exist Figure 7 In (a), the deformation of the lower suction cup 52 is small, resulting in almost no deformation of the lower wafer 2. Figure 7(a) shows the end Pa of the contact area between the upper wafer 1 and the lower wafer 2 and the height Ha of the upper end of the upper wafer 1 relative to the end Pa. The end Pa is located outside the lines B1 and B2.

[0076] exist Figure 7 In (b), the deformation of the lower suction cup 52 is moderate, resulting in a slight deformation of the lower wafer 2. Figure 7 (b) shows the end point Pb of the contact area between the upper wafer 1 and the lower wafer 2, and the height Hb of the upper end point of the upper wafer 1 relative to the end point Pb. The end point Pb is located on the straight lines B1 and B2.

[0077] exist Figure 7 In (c), the lower suction cup 52 deforms significantly, resulting in a large deformation of the lower wafer 2. Figure 7 (c) shows the end Pc of the contact area between the upper wafer 1 and the lower wafer 2, and the height Hc of the upper end of the upper wafer 1 relative to the end Pc. The end Pc is located inside the lines B1 and B2.

[0078] The endpoints Pa, Pb, and Pc represent the points where the bonding process between the upper wafer 1 and the lower wafer 2 stops. Lines B1 and B2 indicate the appropriate stopping points. Therefore, Figure 7 The deformation of the lower suction cup 52 shown in (a) is too small. Figure 7 The deformation of the lower suction cup 52 shown in (c) is too large. On the other hand, Figure 7 The deformation of the lower suction cup 52 shown in (b) is appropriate.

[0079] When bonding the upper wafer 1 and the lower wafer 2, the lower suction cup 52 is deformed to correct the magnification difference between them. Therefore, the amount of deformation of the lower suction cup 52 is determined based on the magnification difference between the upper wafer 1 and the lower wafer 2. However, if the deformation of the lower suction cup 52 is too small or too large, the progress stop position will become unsuitable.

[0080] like Figure 7 As shown in (a), if the bonding progress is too large, the upper wafer 1 will peel off from the upper chuck 51 before entering the waiting state, thereby potentially increasing the error in the bonding position between the upper wafer 1 and the lower wafer 2. On the other hand, as Figure 7 As shown in (c), if the bonding progress is too slow, the bonding position error between the upper wafer 1 and the lower wafer 2 may become larger.

[0081] Figure 8 This is an enlarged cross-sectional view showing the operation of a semiconductor manufacturing apparatus of a comparative example of the first embodiment.

[0082] exist Figure 8In the diagram, the upward-pointing arrow represents the attractive force acting on the upper wafer 1, and the diagonal arrow represents the tension acting on the upper wafer 1. The tension can be decomposed into the force indicated by the downward-pointing arrow and the force indicated by the horizontal arrow. Figure 8 The angle α between the diagonal arrow and the horizontal arrow is also shown.

[0083] If the bonding of the upper wafer 1 and the lower wafer 2 progresses to the vicinity of the end of the upper wafer 1, the angle α increases. As a result, the downward force required to peel the upper wafer 1 from the upper suction cup 51 is greater than the upward force applied to the upper wafer 1. Consequently, the upper wafer 1 will peel off from the upper suction cup 51 before entering the waiting state.

[0084] Figure 9 This is a cross-sectional view showing the operation of the semiconductor manufacturing apparatus according to the first embodiment.

[0085] Figure 9 of (a), Figure 9 (b) and Figure 9 (c) shows Figure 6 The upper wafer 1 and lower wafer 2 are shown in the waiting state as shown in (b). Figure 9 In (a), the deformation of the lower suction cup 52 is small, resulting in almost no deformation of the lower wafer 2. Figure 9 In (b), the deformation of the lower suction cup 52 is moderate, resulting in slight deformation of the lower wafer 2. Figure 9 In (c), the lower suction cup 52 deforms significantly, resulting in substantial deformation of the lower wafer 2. In this embodiment, the ends Pa, Pb, and Pc are all located on straight lines B1 and B2.

[0086] Here, the gap G between the upper wafer 1 and the lower wafer 2 before bonding begins (refer to...) Figure 6 Explain (a)).

[0087] Before beginning the bonding of the comparative examples above, Figure 7 of (a), Figure 7 (b) and Figure 7 In case (c), the value of the gap G is set to the same value. That is, in the comparative example above, even when the value of the deformation amount of the lower suction cup 52 is different, the value of the gap G is set to the same value.

[0088] On the other hand, before the bonding of this embodiment begins, in Figure 9 of (a), Figure 9 (b) and Figure 9In case (c), the value of the gap G is set to a different value. That is, in this embodiment, the value of the gap G is also set to a different value depending on the value of the deformation amount of the lower suction cup 52. Specifically, the value of the gap G is set in such a way that the gap G decreases as the deformation amount of the lower suction cup 52 increases. For example, Figure 9 In case (a), the gap G is set to a large value. Figure 9 In case (c), the gap G is set to a small value.

[0089] If the gap G increases, the upper wafer 1 will not easily contact the lower wafer 2 during bonding. Therefore, Figure 9 The end Pa shown in (a) is... Figure 7 Compared to the end Pa shown in (a), it is not as easy to approach the ends of the upper wafer 1 and the lower wafer 2. On the other hand, if the gap G is smaller, the upper wafer 1 can easily contact the lower wafer 2 during bonding. Therefore, Figure 9 End Pc shown in (c) and Figure 7 Compared to the end Pc shown in (c), it is easier to approach the ends of the upper wafer 1 and the lower wafer 2.

[0090] Therefore, according to this embodiment, by reducing the gap G along with the increase in the deformation of the lower suction cup 52, the ends Pa, Pb, and Pc can all approach straight lines B1 and B2. That is, according to this embodiment, even if the deformation of the lower suction cup 52 is too small or too large, the progress stop position can be made to a suitable position. Figure 9 of (a), Figure 9 (b) and Figure 9 The ends Pa, Pb, and Pc shown in (c) are all located on straight lines B1 and B2. As a result, it is possible to suppress the increase in the error of the bonding position between the upper wafer 1 and the lower wafer 2 before it becomes a waiting state by peeling the upper wafer 1 off from the upper chuck 51.

[0091] By increasing the deformation of the lower suction cup 52, the value of the gap G decreases, and the values ​​of heights Ha, Hb, and Hc become uniform. Thus, the positions of the ends Pa, Pb, and Pc can be unified.

[0092] Figure 10 This is a coordinate diagram used to illustrate the operation of the semiconductor manufacturing apparatus of the first embodiment.

[0093] exist Figure 10 In the diagram, the horizontal axis represents the deformation of the lower suction cup 52, and the vertical axis represents the gap G between the upper wafer 1 and the lower wafer 2 before the bonding begins. Figure 10 The relationship between the deformation and the gap G in this embodiment is shown.

[0094] In this embodiment, the value of the gap G is set such that the gap G decreases as the deformation of the lower suction cup 52 increases. Therefore, even if the deformation of the lower suction cup 52 varies to various values, the progress stop position can be maintained at a suitable position. It should be noted that the gap G is... Figure 10 The variable is a linear function of the deformation, but it can also be a function that depends on the deformation in other ways.

[0095] Figure 11 This is a flowchart illustrating the operation of the semiconductor manufacturing apparatus according to the first embodiment.

[0096] First, control unit 30 ( Figure 1 The magnification difference between the upper wafer 1 and the lower wafer 2 is obtained (step S1). For example, in the semiconductor manufacturing apparatus of this embodiment, a measuring device measures the magnification difference between the upper wafer 1 and the lower wafer 2 and sends the measured value to the control unit 30. Alternatively, in the semiconductor manufacturing apparatus of this embodiment, a measuring device outside the semiconductor manufacturing apparatus measures the magnification difference between the upper wafer 1 and the lower wafer 2 and sends the measured value to the control unit 30. Furthermore, in the semiconductor manufacturing apparatus of this embodiment, the user inputs the magnification difference between the upper wafer 1 and the lower wafer 2 to the control unit 30. The magnification difference between the upper wafer 1 and the lower wafer 2 can be measured, for example, by detecting the alignment marks of the upper wafer 1 and the lower wafer 2.

[0097] Next, the control unit 30 determines the deformation amount of the lower suction cup 52 based on the aforementioned magnification difference (step S2). In this embodiment, the deformation amount is determined such that the magnification difference decreases by controlling the deformation amount to the aforementioned determined value. For example, if the magnification difference value obtained in step S1 is small, the deformation amount is determined to be small. On the other hand, if the magnification difference value obtained in step S1 is large, the deformation amount is determined to be large. According to this embodiment, by determining the deformation amount in this way, the magnification difference between the upper wafer 1 and the lower wafer 2 can be corrected. In this embodiment, the corrected magnification difference value is smaller than the original magnification difference value.

[0098] Next, the control unit 30 determines the value of the gap G between the upper wafer 1 and the lower wafer 2 based on the aforementioned deformation amount (step S3). In this embodiment, the value of the gap G is determined such that the gap G decreases as the deformation amount increases. For example, if the deformation amount determined in step S2 is small, the value of the gap G is determined to be large. On the other hand, if the deformation amount determined in step S2 is large, the value of the gap G is determined to be small. According to this embodiment, by determining the value of the gap G in this way, the progress stop position of the bonding progress of the upper wafer 1 and the lower wafer 2 in the waiting state can be made into a suitable position.

[0099] Next, the control unit 30 determines the use of the impactor 53d based on the aforementioned gap G value. Figure 6 (Step S4) determines the value of the pressing force applied to the wafer 1. In this embodiment, the pressing force is determined such that the pressing force increases with the increase of the gap G. For example, if the gap G determined in step S3 is small, the pressing force is determined to be small. On the other hand, if the gap G determined in step S3 is large, the pressing force is determined to be large. According to this embodiment, by determining the pressing force in this way, the wafer 1 can be pressed with an appropriate pressing force.

[0100] Next, the control unit 30 controls the operation of the semiconductor manufacturing apparatus of this embodiment to bond the upper wafer 1 and the lower wafer 2 (step S5). Specifically, before bonding begins, the control unit 30 controls the deformation amount of the lower suction cup 52 to the value determined in step S2, and controls the gap G between the upper wafer 1 and the lower wafer 2 to the value determined in step S3. Furthermore, the control unit 30 controls the operation of the bonding area 50 to... Figure 6 (a)~ Figure 6 As shown in (d), the upper wafer 1 and the lower wafer 2 are bonded together. During this bonding process, the control unit 30 controls the deformation of the lower suction cup 52 to the value determined in step S2, and controls the pressing force of the impactor 53d to the value determined in step S4. Furthermore, the gap G between the upper wafer 1 and the lower wafer 2 is controlled at the beginning of the bonding process (…). Figure 6 The time point shown in (a) is set to the value determined in step S3. This allows the upper wafer 1 and the lower wafer 2 to be appropriately bonded.

[0101] The semiconductor manufacturing apparatus of this embodiment laminates a plurality of upper wafers 1 and a plurality of lower wafers 2 in each pair of upper wafers 1 and lower wafers 2. For example, the first upper wafer 1 and the first lower wafer 2 are laminated, then the second upper wafer 1 and the second lower wafer 2 are laminated, and then the third upper wafer 1 and the third lower wafer 2 are laminated.

[0102] In this embodiment, the value of the gap G is determined for each pair of upper wafer 1 and lower wafer 2. For example, the gap G when the first upper wafer 1 and the first lower wafer 2 are bonded is set to a first value, the gap G when the second upper wafer 1 and the second lower wafer 2 are bonded is set to a second value, and the gap G when the third upper wafer 1 and the third lower wafer 2 are bonded is set to a third value.

[0103] Figure 12 This is a block diagram showing the functional structure of the control unit 30 in the first embodiment.

[0104] The control unit 30 includes a magnification difference acquisition unit 81 for executing step S1, a deformation amount determination unit 82 for executing step S2, a gap determination unit 83 for executing step S3, a pressing pressure determination unit 84 for executing step S4, and a fitting control unit 85 for executing step S5. Each of these functional blocks (81-85) can be implemented in hardware or software.

[0105] These functional blocks are implemented, for example, by a computer program that causes the processor within the control unit 30 to execute steps S1 to S5. In this case, the control unit 30 has a computer-readable recording medium on which the program is installed. The entire program or a part thereof can also be downloaded to the recording medium from a network.

[0106] [Variation Example]

[0107] Figure 13 This is a cross-sectional view showing a method for manufacturing a semiconductor device according to a modified example of the first embodiment.

[0108] Figure 13 (a) shows an upper wafer 1, a lower wafer 2, and an upper wafer 1' pre-attached to the upper wafer 1. Thus, the upper wafer 1, which is the object of attachment in this embodiment, can also be pre-attached to other upper wafers 1'.

[0109] Figure 13 (b) shows the upper wafer 1, the lower wafer 2, and the lower wafer 2' pre-attached to the lower wafer 2. Thus, the lower wafer 2, which is the object of attachment in this embodiment, can also be pre-attached to other lower wafers 2'.

[0110] Figure 13 (c) shows an upper wafer 1, a lower wafer 2, an upper wafer 1' pre-attached to the upper wafer 1, and a lower wafer 2' pre-attached to the lower wafer 2. Thus, the upper wafer 1 and the lower wafer 2, which are the objects of attachment in this embodiment, can also be pre-attached to other upper wafers 1' and other lower wafers 2', respectively.

[0111] It should be noted that, Figure 13 (a) or Figure 13 (c) The upper wafer 1 can also be pre-attached to two or more upper wafers 1'. Additionally, Figure 13 (b) or Figure 13 The lower wafer 2 of (c) can also be pre-attached with two or more lower wafers 2'.

[0112] Figure 14 This is a cross-sectional view showing a method for manufacturing a semiconductor device, which is another variation of the first embodiment.

[0113] Figure 14Examples of gaps G are shown: gap G1 and gap G2. Gap G1 is the gap between the center of the upper wafer 1 and the center of the lower wafer 2. Gap G2 is the gap between a portion of the upper wafer 1 other than the center and a portion of the lower wafer 2 other than the center. Thus, in this embodiment, gap G can be defined at the center of the upper wafer 1 and the lower wafer 2, or it can be defined at a portion other than the center of the upper wafer 1 and the lower wafer 2.

[0114] As described above, the control unit 30 of this embodiment determines the deformation amount of the lower suction cup 52 based on the magnification difference between the upper wafer 1 and the lower wafer 2, and determines the gap G between the upper wafer 1 and the lower wafer 2 based on the deformation amount. Furthermore, before bonding begins, the control unit 30 of this embodiment controls the deformation amount to the value determined above, and controls the gap G to the value determined above.

[0115] Therefore, according to this embodiment, the upper wafer 1 and the lower wafer 2 can be appropriately bonded. For example, the progress stop position of the bonding progress of the upper wafer 1 and the lower wafer 2 in the waiting state can be made into a suitable position, thereby suppressing the increase of the error in the bonding position of the upper wafer 1 and the lower wafer 2 before the waiting state is entered.

[0116] Specifically, if the bonding progress is too large, the upper wafer 1 may peel off from the upper suction cup 51 before entering the waiting state, thereby potentially increasing the error in the bonding position between the upper wafer 1 and the lower wafer 2. On the other hand, if the bonding progress is too small, the error in the bonding position between the upper wafer 1 and the lower wafer 2 may also increase. According to this embodiment, these problems can be solved by making the progress stop position of the bonding between the upper wafer 1 and the lower wafer 2 in the waiting state an appropriate position.

[0117] While some embodiments have been described above, these embodiments are merely illustrative and not intended to limit the scope of the invention. The novel apparatus and methods described herein can be implemented in a wide variety of other ways. Furthermore, various omissions, substitutions, and modifications can be made to the apparatus and methods described herein without departing from the spirit of the invention. The appended claims and their equivalents are intended to encompass the scope of the invention, such embodiments as included in the spirit of the invention, and variations.

Claims

1. A semiconductor manufacturing apparatus, comprising: The magnification difference acquisition unit acquires the value of the magnification difference between the first substrate and the second substrate; The deformation amount determination unit determines the deformation amount of the suction cup that holds the first substrate or the second substrate based on the value of the magnification difference; The gap determining unit determines the value of the gap between the first substrate and the second substrate based on the value of the deformation amount; as well as The bonding control unit controls the deformation amount and the gap to a predetermined value before bonding the first substrate and the second substrate. The gap determining unit determines the value of the gap so that the combination of the deformation amount and the gap is set as the optimal combination to reduce the error in the bonding position of the first substrate and the second substrate.

2. The semiconductor manufacturing apparatus according to claim 1, The deformation amount determination unit determines the value of the deformation amount so that the magnification difference is reduced by controlling the deformation amount to the determined value.

3. The semiconductor manufacturing apparatus according to claim 1, The gap determining unit determines the value of the gap between the center portion of the first substrate and the center portion of the second substrate.

4. The semiconductor manufacturing apparatus according to claim 1, It also includes a pressure determining unit that determines the pressure value for pressing the first substrate or the second substrate based on the value of the gap. When bonding the first substrate and the second substrate, the bonding control unit controls the pressing pressure to a predetermined value.

5. The semiconductor manufacturing apparatus according to claim 4, The pressure determining unit determines the value of the pressure applied to the center of the first substrate or the second substrate.

6. The semiconductor manufacturing apparatus according to claim 4, The pressing pressure determining unit determines the pressing pressure value for pressing the first substrate, and the deformation amount determining unit determines the deformation amount value of the suction cup that holds the second substrate.

7. The semiconductor manufacturing apparatus according to claim 1, It also includes a bonding section, which is controlled by the bonding control section to bond the first substrate and the second substrate together.

8. The semiconductor manufacturing apparatus according to claim 7, The bonding portion includes: an attraction portion for attracting the first substrate and a pressing portion for pressing the first substrate using pressing pressure.

9. The semiconductor manufacturing apparatus according to claim 7, The bonding portion includes a first support portion that supports a suction cup holding the first substrate and a second support portion that supports a suction cup holding the second substrate. The gap is controlled to the determined value by the fitting control unit controlling the first support or the second support.

10. A semiconductor manufacturing apparatus, comprising: The magnification difference acquisition unit acquires the value of the magnification difference between the first substrate and the second substrate; The deformation amount determination unit determines the deformation amount of the suction cup that holds the first substrate or the second substrate based on the value of the magnification difference; The gap determining unit determines the value of the gap between the first substrate and the second substrate based on the value of the deformation amount; as well as The bonding control unit controls the deformation amount and the gap to a predetermined value before bonding the first substrate and the second substrate. The gap determining unit determines the value of the gap so that the gap decreases as the amount of deformation increases.

11. A method for manufacturing a semiconductor device, comprising: Obtain the magnification difference between the first substrate and the second substrate; The value of the deformation amount of the suction cup that holds the first substrate or the second substrate is determined based on the value of the magnification difference; The value of the gap between the first substrate and the second substrate is determined based on the value of the deformation. as well as Before bonding the first substrate and the second substrate, the deformation amount and the gap are controlled to the determined value. The value of the gap is determined such that the combination of the deformation amount and the gap is set as the optimal combination to reduce the error in the bonding position of the first substrate and the second substrate.

12. The method for manufacturing a semiconductor device according to claim 11, The value of the gap is determined for each pair of the first substrate and the second substrate.

13. The method for manufacturing a semiconductor device according to claim 11, The value of the deformation is determined in such a way that the magnification difference decreases as the deformation is controlled to the determined value.

14. The method for manufacturing a semiconductor device according to claim 11, The value of the gap is determined in such a way that the gap decreases as the amount of deformation increases.

15. The method for manufacturing a semiconductor device according to claim 11, Also includes: The value of the pressing force applied to the first substrate or the second substrate is determined based on the value of the gap. When the first substrate and the second substrate are bonded together, the pressing pressure is controlled to the determined value.

16. The method for manufacturing a semiconductor device according to claim 15, In determining the value of the pressing force, the value of the pressing force applied to the center of the first substrate or the second substrate is determined.

17. The method for manufacturing a semiconductor device according to claim 15, In determining the value of the pressing force, the value of the pressing force applied to the first substrate is determined; in determining the value of the deformation amount, the value of the deformation amount of the suction cup used to hold the second substrate is determined.

18. The method for manufacturing a semiconductor device according to claim 1, Also includes: The deformation amount is controlled to the determined value, and the gap is controlled to the determined value, and the first substrate and the second substrate are bonded together using the bonding part.

19. The method for manufacturing a semiconductor device according to claim 18, The bonding portion includes: an attraction portion for attracting the first substrate and a pressing portion for pressing the first substrate using pressing pressure.

20. The method for manufacturing a semiconductor device according to claim 18, The bonding portion includes a first support portion that supports a suction cup holding the first substrate and a second support portion that supports a suction cup holding the second substrate. The gap is controlled to the determined value by controlling the first support or the second support.

21. A method for manufacturing a semiconductor device, comprising: Obtain the magnification difference between the first substrate and the second substrate; The value of the deformation amount of the suction cup that holds the first substrate or the second substrate is determined based on the value of the magnification difference; The value of the gap between the first substrate and the second substrate is determined based on the value of the deformation. as well as Before bonding the first substrate and the second substrate, the deformation amount and the gap are controlled to the determined value. The value of the gap is determined such that the gap decreases as the amount of deformation increases.

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