Light emitting device

Abstract

This invention discloses a light-emitting device, comprising multiple first light-emitting units and multiple second light-emitting units. Each first light-emitting unit includes a first light source, a first reflective layer, and a first light conversion structure. Each second light-emitting unit includes a second light source, a second reflective layer, and a second light conversion structure. The first emitted light from the first light-emitting unit has a first sub-peak located between 400 nm and 500 nm and a first main peak located between 590 nm and 780 nm. The second emitted light from the second light-emitting unit has a second sub-peak located between 400 nm and 500 nm and a second main peak located between 520 nm and 589 nm, and the normal intensity of the first sub-peak is less than the normal intensity of the second sub-peak. The normal intensity of the first emitted light is measured along a normal direction, and the normal intensity of the second emitted light is also measured along a normal direction.

Description

[0001] This application is a divisional application of the invention patent application filed on November 15, 2019, with application number 201911121531.5 and title "Light Emitting Device". Technical Field

[0002] This invention relates to a light-emitting device, and more particularly to a light-emitting device including a light-adjusting structure. Background Technology

[0003] In conventional light-emitting devices, incident light may illuminate adjacent light-emitting units and affect them, potentially degrading the light emission quality (or display quality). Therefore, this invention proposes a light-emitting device that reduces the aforementioned problems. Summary of the Invention

[0004] In some embodiments, a light-emitting device includes a plurality of first light-emitting units and a plurality of second light-emitting units. Each of the first light-emitting units emits a first emitted light. Each of the plurality of first light-emitting units includes a first light source, a first reflective layer, a first light adjustment structure, and a first light conversion structure. The first light source provides a first light ray, the first reflective layer reflects the first light ray and is disposed on the side or lower surface of the first light source, the first light adjustment structure is disposed on the first light source and used to adjust the first light ray, and the first light conversion structure converts the first light ray into first emitted light. Each of the plurality of second light-emitting units emits a second emitted light. Each of the plurality of second light-emitting units includes a second light source, a second reflective layer, a second light adjustment structure, and a second light conversion structure. The second light source provides a second light ray, the second reflective layer reflects the second light ray and is disposed on the side or lower surface of the second light source, the second light adjustment structure is disposed on the second light source and used to adjust the second light ray, and the second light conversion structure converts the second light ray into second emitted light. The first emitted light has a first sub-peak located between 400 nm and 500 nm and a first main peak located between 590 nm and 780 nm. The second emitted light has a second sub-peak located between 400 nm and 500 nm and a second main peak located between 520 nm and 589 nm. The normal intensity of the first sub-peak is less than the normal intensity of the second sub-peak. The normal intensity of the first emitted light is measured and normalized along a normal direction, and the normal intensity of the second emitted light is measured and normalized along a normal direction.

[0005] In some embodiments, a light-emitting device includes a plurality of first light-emitting units and a plurality of second light-emitting units. Each of the first light-emitting units emits a first emitted light. Each of the plurality of first light-emitting units includes a first light source, a first reflective layer, a first light adjustment structure, and a first light conversion structure. The first light source provides a first light ray, the first reflective layer reflects the first light ray and is disposed on the side or lower surface of the first light source, the first light adjustment structure is disposed on the first light source and used to adjust the first light ray, and the first light conversion structure converts the first light ray into first emitted light. Each of the plurality of second light-emitting units emits a second emitted light. Each of the plurality of second light-emitting units includes a second light source, a second reflective layer, a second light adjustment structure, and a second light conversion structure. The second light source provides a second light ray, the second reflective layer reflects the second light ray and is disposed on the side or lower surface of the second light source, the second light adjustment structure is disposed on the second light source and used to adjust the second light ray, and the second light conversion structure converts the second light ray into second emitted light. The first emitted light has a first sub-peak located between 400 nm and 500 nm and a first main peak located between 590 nm and 780 nm. The second emitted light has a second sub-peak located between 400 nm and 500 nm and a second main peak located between 520 nm and 589 nm. The oblique intensity of the first sub-peak is less than the oblique intensity of the second sub-peak. The oblique intensity of the first emitted light is measured and normalized along an oblique direction, and the oblique intensity of the second emitted light is measured and normalized along an oblique direction. Attached Figure Description

[0006] Figure 1 The diagram shown is a cross-sectional view of the light-emitting device according to the first embodiment of the present invention.

[0007] Figure 2 The diagram shows the light distribution of light emitted by the light-emitting unit.

[0008] Figure 3A The diagram shows a schematic of measuring the spectrum of the first ray emitted by the first light-emitting unit along the normal direction.

[0009] Figure 3B The diagram shows a schematic of measuring the spectrum of the first light emitted by the first light-emitting unit along the tilt direction.

[0010] Figure 4A The diagram shows a schematic of measuring the spectra of the first ray emitted by the first light-emitting unit and the second ray emitted by the second light-emitting unit along the normal direction.

[0011] Figure 4B The diagram shows a schematic of measuring the spectra of the first light emitted by the first light-emitting unit and the second light emitted by the second light-emitting unit along an inclined direction.

[0012] Figure 5 The diagram shown is a cross-sectional view of the light-adjusting structure according to the second embodiment of the present invention.

[0013] Figure 6 The diagram shown is a cross-sectional view of the light-adjusting structure according to the third embodiment of the present invention.

[0014] Figure 7 The diagram shown is a cross-sectional view of the light-adjusting structure according to the fourth embodiment of the present invention.

[0015] Figure 8 The diagram shown is a cross-sectional view of the light-emitting device according to the fifth embodiment of the present invention.

[0016] Figure 9 The diagram shown is a cross-sectional view of the light-emitting device according to the sixth embodiment of the present invention.

[0017] Explanation of reference numerals in the attached figures: 10-Light-emitting device; 100-First substrate; 102-Second substrate; 1041-Interstitial material; 1042-Light modulation layer; 106-Light-shielding structure; 1081, 1082-Polarizers; 110-Optical film; 112-Light source; 112R-Reflective layer; 114-Optical layer; 114B-Lower surface; 114S-Surface; 116-Inverted prism; 118, 126, 148-Reflective surface; 120-Barrier film; 122-Isolation layer; 124-Wall ; 128, 130 - Planarization layer; 132 - Adhesion layer; 134 - Anti-reflection layer; 138 - Active layer; 140 - Gate electrode; 140-1, 140-2 - Conductive layer; 142 - Source electrode; 144 - Drain electrode; AM - Active array layer; B1, B3 - Normal intensity; B2, B4 - Oblique intensity; BL - Backlight module; BS1, BS2 - Filter structure; DP - Panel; EL1 - First electrode; EL2 - Second electrode; IL1, IL2 - Incident light; L 1. CL1, CL2 - Light rays; L2, L3 - Oblique light rays; LAS1, LAS2, LAS3, LAS - Light adjustment structure; LCS1, LCS2, LCS3 - Light conversion structure; LES1, LES2 - Light emission structure; LS1, LS2, LS3 - Light source; LU1 - First light emission unit; LU2 - Second light emission unit; LU3 - Third light emission unit; MW11, MW12, MW21, MW22 - Main wave; O - Aperture; OL1 - First light ray; OL2 - Second ray; OL3 - Third ray; PM11, PM12, PM21, PM22 - Main peaks; PS11, PS12, PS21, PS22 - Sub-peaks; QD1, QD2 - Quantum dots; RM - Reflective element; RP - Prism mirror; S11, S12, S21, S22 - Spectra; SW11, SW12, SW21, SW22 - Sub-waves; T - Tilt direction; Tr - Transistor; V - Normal direction; X, Y - Directions; θ - Tilt angle. Detailed Implementation

[0018] The present invention can be understood by referring to the following detailed description and the accompanying drawings. It should be noted that, for ease of understanding and to keep the drawings concise, many of the drawings in this invention only depict a portion of the light-emitting device, and specific elements in the drawings are not drawn to scale. Furthermore, the number and size of each element in the drawings are for illustrative purposes only and are not intended to limit the scope of the present invention.

[0019] Throughout this specification and the appended claims, certain terms are used to refer to specific elements. Those skilled in the art will understand that electronic device manufacturers may use different names to refer to the same elements. This document is not intended to distinguish between elements that have the same function but different names. In the following specification and claims, words such as "containing" and "comprising" are open-ended terms and should therefore be interpreted as "containing but not limited to...".

[0020] It should be understood that when an element or membrane is referred to as being "on" or "connected" to another element or membrane, it can be directly on or directly connected to that other element or membrane, or there may be an inserted element or membrane between them (indirect cases). Conversely, when an element is referred to as being "directly" on or "directly connected" to another element or membrane, there may be no inserted element or membrane between them.

[0021] The terms “approximately,” “roughly,” “equal to,” or “same” typically mean within 20% of a given value or range, or within 10%, 5%, 3%, 2%, 1%, or 0.5% of a given value or range.

[0022] Although the terms first, second, third… can be used to describe multiple components, the components are not limited to these terms. These terms are used only to distinguish a single component from other components in the specification. The same terms may not be used in the claims, but rather replaced by first, second, third… in the order of the elements declared in the claims. Therefore, in the following description, a first component may be a second component in the claims.

[0023] It should be understood that the technical features of several different embodiments can be replaced, reorganized, or mixed to complete other embodiments without departing from the spirit of the present invention.

[0024] Please refer to Figure 1The diagram shows a cross-sectional schematic of a light-emitting device according to a first embodiment of the present invention. The light-emitting device may include a display device, an electronic device, a flexible device, or other suitable devices, but is not limited thereto. The light-emitting device can be applied to tilted devices. For example, the light-emitting device 10 may include a panel DP and a backlight module BL, with the panel DP disposed relative to the backlight module BL. The panel DP may include a first substrate 100, a second substrate 102, and a light modulation layer 1042 disposed between the first substrate 100 and the second substrate 102. The first substrate 100 may be disposed between the light modulation layer 1042 and the backlight module BL. The first substrate 100 and the second substrate 102 may include transparent substrates, such as rigid substrates including glass substrates or quartz substrates, or flexible substrates including plastic substrates, but are not limited thereto. The material of the plastic substrate may include, for example, polyimide (PI), polycarbonate (PC), or polyethylene terephthalate (PET), but is not limited thereto. In some embodiments, the panel DP may be, for example, a liquid crystal panel, the light modulation layer 1042 may be a liquid crystal layer, and some spacers 1041 may be disposed between the first substrate 100 and the second substrate 102. The first substrate 100 may be an array substrate. The second substrate 102 may be a color filter substrate or a protective substrate, but is not limited thereto. For example, transistors, signal lines (such as scan lines or data lines), or insulating layers may be disposed on the first substrate 100, but are not limited thereto.

[0025] The panel DP may include, but is not limited to, an alignment layer, electrodes (e.g., pixel electrodes or common electrodes), or a light-shielding structure 106. For example, the light-shielding structure 106 may be disposed between the second substrate 102 and the first substrate 100. The light-shielding structure 106 may include multiple openings, and light conversion structures (e.g., light conversion structure LCS1, light conversion structure LCS2, or light conversion structure LCS3) may be disposed in the openings of their corresponding light-shielding structures 106. In some embodiments, a light conversion structure may be disposed corresponding to a corresponding opening of the light-shielding structure 106. The material of the light-shielding structure 106 may include, but is not limited to, black photoresist, black printing ink, black resin, or other suitable materials or combinations thereof.

[0026] In some embodiments, the panel DP may include polarizer 1081 and polarizer 1082. Polarizer 1081 may be disposed between the first substrate 100 and the backlight module BL, and polarizer 1082 may be disposed between the light conversion structure and the light modulation layer 1042. However, the placement of polarizer 1081 and polarizer 1082 is not limited to the above. In some embodiments, the light-emitting device has a light modulation layer 1042 (e.g., liquid crystal (LC)), which may be disposed between two polarizers to adjust grayscale; therefore, the light conversion structure cannot be disposed between two polarizers. In some embodiments, polarizer 1081 and polarizer 1082 may be disposed between the first substrate 100 and the second substrate 102. Polarizer 1081 and polarizer 1082 may include metal wires, i.e., so-called wire grid polarizers (WGP), but are not limited thereto. The materials for the metal conductors include metals, metal alloys, other suitable materials, or combinations thereof, but are not limited thereto. In some embodiments, the first substrate 100 and the second substrate 102 may be disposed between polarizers 1081 and 1082. The materials for polarizers 1081 and 1082 may include a protective film, triacetate cellulose (TAC), polyvinyl alcohol (PVA), pressure-sensitive adhesive (PSA), or release film, but are not limited thereto.

[0027] In some embodiments, the panel DP may include at least one optical film 110 disposed between the panel DP and the backlight module BL. In some embodiments, the optical film 110 includes a dual brightness enhancement film (DBEF), a prism film, other suitable optical films, or combinations of the above materials, but is not limited thereto.

[0028] The backlight module BL may include a light source 112 and an optical layer 114. For example... Figure 1As shown, the backlight module BL can be an edge-lit backlight module, and the light source 112 can be disposed close to at least one sidewall of the optical layer 114, but is not limited thereto. The light source 112 may include a light-emitting diode (LED), a micro LED, a sub-millimeter light-emitting diode (mini LED), an organic light-emitting diode (OLED), a quantum dot LED (QLED or QD-LED), a quantum dot (QD), fluorescent materials, phosphorescent materials, other suitable light sources, or combinations of the above materials, but is not limited thereto. In some embodiments, the backlight module BL may emit blue light or ultraviolet light, but is not limited thereto. The optical layer 114 may include a light guide plate, a diffuser plate, or other optical films (or plates). Figure 1 As shown, a ray L1, approximately parallel to the normal direction V, can be emitted from a surface 114S of the optical layer 114. An oblique ray L2 can be emitted from the surface 114S of the optical layer 114, and the oblique ray L2 may not be parallel to the normal direction V of the first substrate 100.

[0029] like Figure 1 As shown, the light-emitting device 10 includes a plurality of first light-emitting units LU1, a plurality of second light-emitting units LU2, and a plurality of third light-emitting units LU3. In some embodiments, the light-emitting device 10 further includes other light-emitting units. In some embodiments, at least one first light-emitting unit LU1 includes a light source LS1, a light modulation structure LAS1, and a light conversion structure LCS1; at least one second light-emitting unit LU2 includes a light source LS2, a light modulation structure LAS2, and a light conversion structure LCS2; and at least one third light-emitting unit LU3 includes a light source LS3, a light modulation structure LAS3, and a light conversion structure LCS3. In some embodiments, the light conversion structures (such as light conversion structures LCS1, LCS2, and LCS3) can be respectively disposed on the light sources (such as light sources LS1, LS2, and LS3). In some embodiments, the light modulation layer 1042 can be disposed between the light source and the light conversion structure. Figure 1 As shown, one light-emitting unit can correspond to an opening in the light-shielding structure 106. For example, as Figure 1 As shown, one light-emitting unit can correspond to all the elements contained within a vertical region of an opening. In some embodiments, the light-emitting unit can be a sub-pixel (such as a red sub-pixel, a green sub-pixel, or a blue sub-pixel, but is not limited thereto).

[0030] In some embodiments, the light adjustment structure may be disposed on the light source, or the light adjustment structure may be disposed between the light source and the light conversion structure. In some embodiments, the light adjustment structure may be included within the backlight module BL. In some embodiments, the light adjustment structure is continuous. Figure 1As shown, light adjustment structures LAS1, LAS2, and LAS3 can be interconnected. In some embodiments, light adjustment structures LAS1, LAS2, or LAS3 can be a lens structure. For example, the lens structure can be formed by light adjustment structures LAS1, LAS2, and LAS3, and the light adjustment structure can include a reflective element RM and a chamfered mirror RP disposed on the reflective element RM. The chamfered mirror RP can include a plurality of chamfered mirrors 116 interconnected with each other. For example, the tip of one of the chamfered mirrors 116 can point to (or be adjacent to) the reflective element RM. In some embodiments, the reflective element RM can include a barrier film 120 and a plurality of reflective surfaces 118 disposed within the barrier film 120. The tilt angle between one of the reflective surfaces 118 and direction X can range from 20 degrees to 80 degrees, or from 30 degrees to 70 degrees. In some embodiments, the tilt angle between one of the reflective surfaces 118 and direction X can be adjusted according to different requirements. The material of the reflective surface 118 may include, but is not limited to, metal, white reflective material, or other suitable reflective material. The material of the barrier film 120 may include, but is not limited to, transparent material or insulating material.

[0031] Taking the light source LS1 and the light adjustment structure LAS1 as an example, the light ray L1 emitted by the light source LS1 can be approximately parallel to the normal direction V, and the direction of the light ray L1 can be unaffected by the light adjustment structure LAS1. Furthermore, after passing through the light adjustment structure LAS1, the light ray L1 can still be approximately parallel to the normal direction V, but this is not a limitation. In addition, the oblique light ray L2 can be reflected by at least one of the reflecting surfaces 118 of the reflecting element RM, and then refracted by at least one of the chamfered prisms 116 of the chamfered prism RP. Thus, after passing through the light adjustment structure LAS1, the direction of the oblique light ray L2 can be adjusted to be approximately parallel to the normal direction V. It should be noted that although... Figure 1 Only oblique rays L2 and L1 are shown, but this is not a limitation. In fact, rays emitted from the surface 114S of the optical layer 114 can be scattered rays. The optical paths of oblique rays L2 (and L1) in the example are merely examples and are not limited to this.

[0032] Therefore, light adjustment structures (such as light adjustment structures LAS1, LAS2, and LAS3) can increase the collimation of the light source or provide a light collimation effect, and the light rays, after passing through the light adjustment structures (such as light adjustment structures LAS1, LAS2, and LAS3), can be approximately parallel to the normal direction V. For example, an incident light IL1 can be a mixed ray, which is at least a mixture of a ray L1 adjusted by the light adjustment structure LAS1 and an oblique ray L2, and the incident light IL1 is collimated or approximately parallel to the normal direction V.

[0033] like Figure 1 As shown, the light conversion structure LCS1 may include a quantum dot QD1, which can be excited by a portion of the incident light IL1. This portion of the incident light IL1 can be converted by the quantum dot QD1 into a ray CL1. Therefore, the first ray OL1 can be a mixture of the ray CL1 and the unconverted incident light IL1. In other words, the first ray OL1 can be provided by the light source LS1, adjusted by the light adjustment structure LSA1, and converted by the light conversion structure LCS1. The first ray OL1 can be the emitted light emitted by the first light-emitting unit LU1. In this invention, the emitted light can be considered as the final visible light of the light-emitting device 10 as seen by an observer.

[0034] like Figure 1 As shown, the light conversion structure LCS2 may include a quantum dot QD2, which can be excited by a portion of the incident light IL2 (such as collimated light adjusted by the light adjustment structure LAS2), and the portion of the incident light IL2 can be converted into a light ray CL2 by the quantum dot QD2. The quantum dot QD2 may be different from the quantum dot QD1. A second light ray OL2 may be formed by a mixture of light ray CL2 and unconverted incident light IL2. In other words, the second light ray OL2 may be provided by the light source LS2, adjusted by the light adjustment structure LSA2, and converted by the light conversion structure LCS2. The second light ray OL2 may be the emitted light emitted by the second light-emitting unit LU2.

[0035] In some embodiments, a third ray OL3 emitted by the third light-emitting unit LU3 may be blue light. Since the light source LS3 emits blue light, the light conversion structure LCS3 may be replaced with a transparent layer that does not contain quantum dots. The transparent layer may include, but is not limited to, a transparent dielectric material. In some embodiments, the light conversion structure LCS3 may include a blue color filter. In some embodiments, the third light-emitting unit LU3 may not include the light conversion structure LCS3. In some embodiments, the light conversion structure LCS3 may include quantum dots of a suitable type to adjust the wavelength of the third ray OL3.

[0036] In some embodiments, the first light ray OL1 may be green light, the second light ray OL2 may be red light, and the third light ray OL3 may be blue light, but this is not a limitation. In some embodiments, the light-emitting device 10 may include other light-emitting units that can emit light of a different color than the first light ray OL1, the second light ray OL2, and the third light ray OL3. In some embodiments, the light-emitting device 10 may include other light-emitting units that can emit light of different wavelengths.

[0037] The light conversion structure may include, but is not limited to, quantum dots, fluorescent materials, phosphorescent materials, color filters, other suitable materials, or combinations thereof. Quantum dots may be formed from semiconductor nanocrystal structures and may include, but are not limited to, cadmium selenide (CdSe), cadmium sulfide (CdS), cadmium telluride (CdTe), zinc selenide (ZnSe), zinc telluride (ZnTe), zinc sulfide (ZnS), mercury telluride (HgTe), indium arsenide (InAs), alloys (Cd1-xZnxSe1-ySy), cadmium selenide / zinc sulfide, indium phosphide (InP), and gallium arsenide (GaAs). Quantum dots typically have a particle size between 1 nanometer and 30 nanometers, between 1 nanometer and 20 nanometers, or between 1 nanometer and 10 nanometers. In one embodiment, quantum dots may be excited by incident light emitted by a backlight module BL, and the incident light may be converted by the quantum dots into emitted light with different wavelengths. The color of the emitted light may be adjusted by the material or size of the quantum dots. In other embodiments, quantum dots may include spherical particles, cylindrical particles, or particles of any other suitable shape, provided that the quantum dots can emit light of a suitable color.

[0038] Please refer to Figure 1 and Figure 2 , Figure 2 The diagram illustrates the light distribution of light emitted by the light-emitting unit. For example, the first ray OL1 emitted by the first light-emitting unit LU1 may include ray CL1 and unconverted incident light IL1, and the first ray OL1 may be emitted from the light-emitting surface of the light-emitting device 10. Since the unconverted incident light IL1 is adjusted by the light adjustment structure LSA1, the distribution of the unconverted incident light IL1 emitted by the light-emitting device 10 can be more concentrated (collimated). Since the ray CL1 converted by the quantum dot QD1 can be scattered light, the distribution of the ray CL1 emitted by the light-emitting device 10 can be more divergent. In some embodiments, ray CL1 and unconverted incident light IL1 may have a conical distribution, but this is not a limitation. The distribution range of ray CL1 may be larger than the distribution range of unconverted incident light IL1, but this invention is not limited thereto. In some embodiments, the second ray OL2 emitted by the second light-emitting unit LU2 may have the same or similar characteristics as the first ray OL1 described above.

[0039] Please refer to Figure 3A and Figure 3B , Figure 3A The diagram shows a schematic of measuring the spectrum of the first ray emitted by the first light-emitting unit along the normal direction. Figure 3B The diagram shows a schematic of measuring the spectrum of the first light emitted by the first light-emitting unit along the tilt direction. Figure 3A The spectrum S11 in the middle can be along Figure 2 The normal direction V shown is measured, and Figure 3BThe spectrum S12 in the middle can be along Figure 2 The tilt direction T is measured as shown. The tilt angle θ between the tilt direction T and the normal direction V can range from 30 degrees to 80 degrees, where the normal direction V is set to 0 degrees, but is not limited to this. Figure 3A and Figure 3B In the spectrum S11, a main wave MW11 and a secondary wave SW11 may be included, and a spectrum S12 may include a main wave MW12 and a secondary wave SW12. The main waves MW11 and MW12 may represent the light CL1 converted by the light conversion structure LCS1, and the secondary waves SW11 and SW12 may represent the unconverted incident light IL1. Figure 4A , Figure 4B and Figure 3A , Figure 3B The spectra in the spectrum can be normalized, and the normalized intensity of the main peak of the main wave in spectra S11 and S12 can be 100%. The main wave MW11 includes a main peak PM11, and the secondary wave SW11 includes a secondary peak PS11. The main wave MW12 includes a main peak PM12, and the secondary wave SW12 includes a secondary peak PS12. The peak of the main wave is defined as "main peak," and the peak of the secondary wave is defined as "secondary peak." In other spectra, "main peak" and "secondary peak" can also be defined in the same way as above. In spectra S11 and S12, the first ray OL1 has a secondary peak PS11 (or PS12) located between 400 nm and 500 nm and a main peak PM11 (or PM12) located between 590 nm and 780 nm.

[0040] like Figure 3A and Figure 3B As shown, the normal intensity B1 of wavelet peak PS11 is greater than the oblique intensity B2 of wavelet peak PS12. The normal intensity of a wavelet peak refers to the normalized intensity of the wavelet peak measured along the normal direction V, and the oblique intensity of a wavelet peak refers to the normalized intensity of the wavelet peak measured along the tilt direction T. In some embodiments, the normal intensity B1 of wavelet peak PS11 ranges from 0.1% to 10%, and the oblique intensity B2 of wavelet peak PS12 ranges from 0.01% to 0.97%. When the tilt angle θ, based on the normal direction V of the light-emitting device 10, increases, the oblique intensity B2 of wavelet peak PS12 decreases. The ratio of the oblique intensity B2 of wavelet peak PS12 to the normal intensity B1 of wavelet peak PS11 ranges from 0.001 to 0.97. Since the incident light IL1 is adjusted and collimated by the light adjustment structure LSA1, the possibility of the incident light IL1 of the first light-emitting unit LU1 being emitted to the adjacent light-emitting unit (such as the second light-emitting unit LU2 or the third light-emitting unit LU3) can be reduced, and the light emission quality (or display quality) can be improved.

[0041] Please refer to Figure 4A and Figure 4B , Figure 4A The diagram shows a schematic of measuring the spectra of the first ray emitted by the first light-emitting unit and the second ray emitted by the second light-emitting unit along the normal direction. Figure 4B The diagram shows the spectra of the first ray emitted by the first light-emitting unit and the second ray emitted by the second light-emitting unit, measured along an inclined direction. The spectrum S11 (solid line) of the first ray OL1 and the spectrum S21 (dashed line) of the second ray OL2, measured along the normal direction V, are plotted together. Figure 4A In the diagram, the spectrum S12 of the first ray OL1 and the spectrum S22 of the second ray OL2, measured along the tilt direction T, are plotted. Figure 4B In this context, spectra S12 and S22 can be measured at the same tilt angle θ. Figure 4A , Figure 4B and Figure 3A , Figure 3B The spectra S11 and S12 of the first ray OL1 can be the same, which will not be elaborated further here. Figure 4A and Figure 4B In the spectrum S21, a main wave MW21 and a sub-wave SW21 may be included, and a spectrum S22 may include a main wave MW22 and a sub-wave SW22. The main waves MW21 and MW22 may represent the light ray CL2 converted by the light conversion structure LCS2, and the sub-waves SW21 and SW22 may represent the unconverted incident light IL2 in the second light ray OL2. The main wave MW21 has a main peak PM21, and the sub-wave SW21 has a sub-peak PS21. The main wave MW22 has a main peak PM22, and the sub-wave SW22 has a sub-peak PS22. In spectra S21 and S22, the second light ray OL2 has sub-peaks PS21 and PS22 located between 400 nm and 500 nm, and main peaks PM21 and PM22 located between 520 nm and 589 nm.

[0042] like Figure 4A and Figure 4B As shown, the normal intensity B3 of wavelet peak PS21 is greater than the oblique intensity B4 of wavelet peak PS22. When the tilt angle θ, based on the normal direction V (0 degrees) of the light-emitting device 10, increases, the oblique intensity B4 of wavelet peak PS22 decreases. Since spectra S21 and S22 are normalized, the values ​​of normal intensity B3 and oblique intensity B4 can be expressed as percentages. For example, the normal intensity B3 of wavelet peak PS21 ranges from 0.1% to 20%, and the oblique intensity B4 of wavelet peak PS22 ranges from 0.01% to 1.95%. Figure 4AIn the first ray OL1, the normal intensity B1 of the wavelet peak PS11 is different from the normal intensity B3 of the wavelet peak PS21 of the second ray OL2, and the normal intensity B1 of wavelet peak PS11 is less than the normal intensity B3 of wavelet peak PS21. Figure 4B In the same tilt angle θ, the oblique intensity B2 of the sub-peak PS12 of the first ray OL1 is different from the oblique intensity B4 of the sub-peak PS22 of the second ray OL2, and the oblique intensity B2 of the sub-peak PS12 is less than the oblique intensity B4 of the sub-peak PS22. The ratio of the oblique intensity B4 of the sub-peak PS22 to the normal intensity B3 of the sub-peak PS21 ranges from 0.001 to 0.97. Since the incident light IL2 is adjusted and collimated by the light adjustment structure LSA2, the possibility of the incident light IL2 of the second light-emitting unit LU2 being emitted into adjacent light-emitting units (such as the first light-emitting unit LU1 or the third light-emitting unit LU3) can be reduced, and the light emission quality (or display quality) can be improved.

[0043] The aforementioned spectrum can be obtained by measuring chromaticity using instruments such as a photo detector, a color analyzer CA-210, a VKK USB CS1000, or a spectroradiometer, but is not limited thereto. During measurement, the measuring instrument can be positioned on one side of the light-emitting surface of the light-emitting unit of the light-emitting device 10, and the light-emitting surface is away from the backlight module BL or the light source. The light-emitting device 10 can be configured to activate multiple light-emitting units (multiple first light-emitting units LU1 or multiple second light-emitting units LU2) emitting the same color of light, and each spectrum (such as spectrum S11, spectrum S12, spectrum S21, and spectrum S22) can be obtained by measuring its corresponding light-emitting unit. For example, please refer to... Figure 2 The spectrum can be measured in the range of tilt angle θ from 0 degrees (i.e., normal direction V) to 90 degrees (i.e., direction X or direction Y, but not limited to this).

[0044] The technical features in different embodiments of the present invention may be replaced, rearranged, or combined. To facilitate comparison of these differences, the following description will detail the differences between the various embodiments, while identical technical features will not be repeated. It should be noted that although the following description or illustrations only show oblique rays L2 and L1, this is not intended to be limiting. In fact, the light emitted from the surface 114S of the optical layer 114 can be scattered light. The optical paths of oblique rays L2 (and L1) in the example are merely one example and are not intended to be limiting.

[0045] Please refer to Figure 5The diagram shows a cross-sectional view of the light-adjusting structure according to a second embodiment of the present invention. Unlike the first embodiment, the reflective element RM of the light-adjusting structure LAS can be disposed in the optical layer 114, and the reflective surface 118 can be disposed in a portion of the optical layer 114 near a surface 114S adjacent to the prism RP. Furthermore, the prism RP can be disposed on the surface 114S of the optical layer 114. In some embodiments, if light ray L1 is approximately parallel to the normal direction V, the direction of light ray L1 may not be changed by the light-adjusting structure LAS, and light ray L1 will remain approximately parallel to the normal direction V after passing through the light-adjusting structure LAS. In another example, oblique light ray L2 can be reflected by the reflective surface 118 of the optical layer 114 and then refracted by the prism 116 of the prism RP. Thus, the direction of oblique light ray L2 can be adjusted to be approximately parallel to the normal direction V after passing through the light-adjusting structure LAS.

[0046] Please refer to Figure 6 The diagram shows a cross-sectional view of the light adjustment structure according to a third embodiment of the present invention. Unlike the first embodiment, the backlight module BL can be a direct-lit backlight module, and the light source 112 can be disposed adjacent to the lower surface 114B of the optical layer 114, but is not limited thereto. In some embodiments, a reflective layer 112R can be disposed on the side or lower surface of at least one light source 112. The reflective layer 112R can be used to reflect the light emitted by the corresponding light source 112 back to the optical layer 114. The material of the reflective layer 112R can include suitable reflective materials, such as metal or white reflective materials, but is not limited thereto.

[0047] Please refer to Figure 7 The diagram shows a cross-sectional view of the light-adjusting structure according to a fourth embodiment of the present invention. Unlike the third embodiment, the light-adjusting structure LAS includes multiple inverted prisms 116, which are disposed on a light-emitting source 112, wherein the light source includes at least one light-emitting source 112. The at least one light-emitting source 112 may be disposed between two adjacent inverted prisms 116. In some embodiments, one light-emitting source 112 may correspond to an opening O between two adjacent inverted prisms 116. In some embodiments, in the normal direction V, one light-emitting source 112 may overlap with an opening O between two adjacent inverted prisms 116. Figure 7 As shown, the inverted prism 116 can be a cross-section of a prism bar extending in the Y direction. In some embodiments, the backlight module BL may include a plurality of prism bars extending in the Y direction and a plurality of prism bars extending in the X direction. The prism bars extending in the Y direction and the prism bars extending in the X direction may intersect to define a plurality of openings. In some embodiments, the backlight module BL may include a plurality of prism bars extending in the Y direction, and the plurality of openings extending in the Y direction may be defined by two adjacent prism bars.

[0048] Please refer to Figure 8 The diagram shown is a cross-sectional schematic of a light-emitting device according to a fifth embodiment of the present invention. Unlike the first embodiment, the light-emitting device 10 may include organic light-emitting diodes (OLEDs). Figure 8 As shown, a light-emitting structure LES1 and a light-emitting structure LES2 may be disposed between the first substrate 100 and the second substrate 102. The light-emitting structure LES1 (and / or the light-emitting structure LES2) may extend through and correspond to the first light-emitting unit LU1, the second light-emitting unit LU2, and the third light-emitting unit LU3. The light-emitting structure LES1 (and / or the light-emitting structure LES2) may include organic light-emitting materials, quantum dots, other suitable materials, or combinations thereof, but is not limited thereto. In some embodiments, the light-emitting device 10 may include at least one light-emitting structure. In some embodiments, the light-emitting structure may be continuous. In some embodiments, the light-emitting structure may be discontinuous, and each light-emitting structure may be disposed within a corresponding light-emitting unit.

[0049] The light-emitting structures LES1 and LES2 can be disposed between multiple first electrodes EL1 and a second electrode EL2. Each first electrode EL1 can be disposed within a first light-emitting unit LU1, a second light-emitting unit LU2, or a third light-emitting unit LU3. The second electrode EL2 can extend through and correspond to the first light-emitting unit LU1, the second light-emitting unit LU2, and the third light-emitting unit LU3. The second electrode EL2 can be one of the cathode and the anode, and the first electrode EL1 can be the other of the cathode and the anode. The material of the second electrode EL2 can include transparent conductive materials, such as indium tin oxide (ITO), indium zinc oxide (IZO), and aluminum zinc oxide (AZO), but is not limited thereto. The material of the first electrode EL1 can include reflective conductive materials (such as metals), but is not limited thereto.

[0050] An insulating layer 122 may be disposed on the second electrode EL2 and extend through and correspond to the first light-emitting unit LU1, the second light-emitting unit LU2, and the third light-emitting unit LU3. The material of the insulating layer 122 may include an inorganic layer or an organic layer, but is not limited thereto. In some embodiments, the material of the insulating layer 122 may be an inorganic-organic-inorganic (IOI) layer. Taking the first light-emitting unit LU1 as an example, the light-adjusting structure LAS1 is disposed adjacent to the light source LS1 (including the light-emitting structures LES1 and LES2 disposed within the first light-emitting unit LU1), and the light-adjusting structure LAS1 may be discontinuous, that is, the light-adjusting structure LAS1 is separated from the light-adjusting structures LAS2 and LAS3. In addition, the wall 124 (such as the light-emitting unit (pixel) definition layer) may have multiple openings for defining different light-emitting units (the first light-emitting unit LU1, the second light-emitting unit LU2, and the third light-emitting unit LU3). In some embodiments, a light-adjusting structure LAS1 (or LAS2 or LAS3) may be disposed on at least one side of wall 124. The light-adjusting structure LAS1 may include a diffusion layer or a reflective layer, but is not limited thereto. For example, the light-adjusting structure LAS1 may include an insulating layer 122 and a reflective surface 126, wherein the reflective surface 126 is disposed within the insulating layer 122. In some embodiments, the reflective surface 126 may have a serrated structure, a straight-line structure, or other suitable shape, but is not limited thereto. In some embodiments, the material of the reflective surface 126 may include a reflective material (such as metal) or a white reflective material, but is not limited thereto. In some embodiments, the reflective surface 126 may be a single-layer structure or a multi-layer composite structure. In some embodiments, the reflective surface 126 may be a multi-layer structure with different refractive indices stacked on top of each other. The insulating layer 122 may include at least one organic layer or at least one inorganic layer, and the reflective surface 126 may be disposed within the insulating layer 122. For example, the reflective surface 126 may be disposed in at least one of the insulating layers 122, or the reflective surface 126 may be disposed between two of the insulating layers 122.

[0051] In some embodiments, the reflective surface 126 of the light-adjusting structure LAS1 is disposed on at least one side of the wall 124. A ray L3 emanating from the light source LS1 can be reflected by the reflective surface 126, and the direction of travel of the ray L3 can be adjusted to be approximately parallel to the normal direction V. The light source LS1 includes a portion of the light-emitting structure LES1 and the light-emitting structure LES2 located within the first light-emitting unit LU1. In some embodiments, the light-adjusting structures LAS2 and LAS3 may also include the reflective surface 126 within the second light-emitting unit LU2 and the third light-emitting unit LU3. Therefore, the light emitted from the light source LS1 (or the light source LS2, the light source LS3) (including the ray L3 emanating from the light source LS1) can be approximately parallel to the normal direction V or more collimated after being adjusted by the light-adjusting structure LAS1 (or the light-adjusting structure LAS2, the light-adjusting structure LAS3).

[0052] A planarization layer 128 may be disposed on the insulating layer 122. In some embodiments, a planarization layer 130 may be disposed on the planarization layer 128, and an adhesive layer 132 may be disposed between the planarization layer 128 and the planarization layer 130. In some embodiments, the planarization layer 128 (or planarization layer 130) may be omitted, and the adhesive layer 132 may cover the uneven insulating layer 122. Furthermore, a plurality of antireflective layers 134 may be disposed on the second substrate 102. The antireflective layer 134 may be a polarizer or a metal wire grid polarizer (WGP), but is not limited thereto.

[0053] In some embodiments, within the first light-emitting unit LU1 (and / or the second light-emitting unit LU2), a filter structure BS1 (and / or a filter structure BS2) may be disposed between the light conversion structure LCS1 (and / or the light conversion structure LCS2) and the second substrate 102. The filter structure may include a Bragg layer, a yellow color filter layer, color filters of other wavelengths, other suitable materials, or combinations thereof, but is not limited thereto. In some embodiments, the light conversion structure LCS3 may include scattering particles 136, but is not limited thereto.

[0054] An active array layer AM may be disposed between the light-emitting structure LES1 and the first substrate 100. The active array layer AM may include multiple transistors Tr. The first light-emitting unit LU1, the second light-emitting unit LU2, and the third light-emitting unit LU3 may each include at least one transistor Tr, but are not limited thereto. The first electrode EL1 may be electrically connected to the corresponding transistor Tr. The transistor Tr may include an active layer 138, a gate electrode 140, a source electrode 142, and a drain electrode 144.

[0055] Please refer to Figure 9The diagram shown is a cross-sectional schematic of a light-emitting device according to a sixth embodiment of the present invention. Unlike the first embodiment, the light-emitting device 10 may include a light-emitting diode (LED). For example... Figure 9 As shown, light sources LS1, LS2, and LS3 can be disposed between the first substrate 100 and the second substrate 102. The first light-emitting unit LU1, the second light-emitting unit LU2, or the third light-emitting unit LU3 can each include at least one light source 112 disposed on the first substrate 100. The light source 112 can include a light-emitting diode, a micro LED, a sub-millimeter light-emitting diode, or a quantum dot LED (QLED or QD-LED), but is not limited thereto. A light source 112 can include a conductive layer 140-1, a conductive layer 140-2, and a protective layer 146, and the protective layer 146 can be adjacent to at least one side of the conductive layer 140-1 or the conductive layer 140-2, but is not limited thereto. Furthermore, an adhesive layer 132 can be disposed between at least one of the light sources 112 and at least one of the light conversion structures, but is not limited thereto.

[0056] Taking the first light-emitting unit LU1 as an example, the light-adjusting structure LAS1 can be disposed on at least one side of the wall 124. In some embodiments, the light-adjusting structure LAS1 may include a portion of the insulating layer 122, and include a plurality of reflective surfaces 148 disposed within this portion of the insulating layer 122. The reflective surfaces 148 may not be parallel to the normal direction V and the direction X, and the reflective surfaces 148 may be substantially parallel to each other, but are not limited thereto. In some embodiments, the slope of the reflective surface 148 may be similar to the slope of the corresponding side of the wall 124, wherein the corresponding side of the wall 124 may be the side on which the reflective surface 148 is formed. In some embodiments, the slope of the reflective surface 148 may be different from the slope of the corresponding side of the wall 124, wherein the corresponding side of the wall 124 may be the side on which the reflective surface 148 is formed.

[0057] In some embodiments, the material of the reflective surface 148 may include a reflective material (such as metal) or a white reflective material, but is not limited thereto. The insulating layer 122 may include multiple organic layers and multiple inorganic layers, and the reflective surface 148 may be disposed in one of the layers of the insulating layer 122 or within multiple layers of the insulating layer 122, or the reflective surface 148 may be disposed between two layers of the insulating layer 122.

[0058] Because the reflective surface 148 of the light adjustment structure LAS1 is disposed on at least one side of the wall 124, oblique rays emitted from the light source LS1 can be reflected by the reflective surface 148, and the direction of the oblique rays emitted from the light source LS1 can be adjusted to be approximately parallel to the normal direction V. In the second light-emitting unit LU2 and the third light-emitting unit LU3, the light adjustment structures LAS2 and LAS3 may include the reflective surface 148. Therefore, the light emitted by the light source (such as the light source LS1, the light source LS2, and the light source LS3) can be approximately parallel to the normal direction V or more collimated after being adjusted by the light adjustment structures (such as the light adjustment structures LAS1, LAS2, and LAS3).

[0059] In some embodiments, the light-emitting device 10 described above can be used in vehicles such as cars, trains, or airplanes, but is not limited thereto.

[0060] Since the amount of light not converted by the light conversion structure in the tilt direction T is less than the amount of light not converted by the light conversion structure in the normal direction V, and the probability of light being emitted from the light source to adjacent light-emitting units is reduced, the color of the signal light perceived by the viewer (or driver) can be purer.

[0061] In summary, the light-emitting device may include a light-adjusting structure, and the light emitted by the light source may be more collimated or adjusted by the light-adjusting structure to be approximately parallel to the normal direction. In some embodiments, the light-adjusting structure may include a chamfered prism and a reflective element. In some embodiments, the light-adjusting structure may include an insulating layer and a reflective surface disposed within an insulating layer. Therefore, the likelihood of light being emitted from one light-emitting unit to an adjacent light-emitting unit is reduced, and the light emission quality (or display quality) can be improved.

[0062] The above description is merely an embodiment of the present invention and is not intended to limit the invention. Those skilled in the art will recognize that the present invention can have various modifications and variations. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A light emitting device, characterized by, include: A plurality of first light-emitting units, wherein the plurality of first light-emitting units emit a first emitted light, and each of the plurality of first light-emitting units includes: A first light source, used to provide a first ray; A first reflective layer for reflecting the first light, wherein the first reflective layer is disposed on the side or lower surface of the first light source; A first light adjustment structure is disposed on the first light source and used to adjust the first light, wherein the first light passes through the first light adjustment structure; as well as A first light conversion structure is used to convert the first light ray into the first emitted light ray; A plurality of second light-emitting units, wherein the plurality of second light-emitting units emit a second emitted light, and each of the plurality of second light-emitting units includes: A second light source, used to provide a second ray; A second reflective layer for reflecting the second light, wherein the second reflective layer is disposed on the side or lower surface of the second light source; A second light adjustment structure is disposed on the second light source and used to adjust the second light beam, wherein the second light beam passes through the second light adjustment structure; and A second light conversion structure is used to convert the second light ray into the second emitted light; as well as A light-shielding structure includes multiple openings, wherein a first light-converting structure is disposed in one of the multiple openings, and a second light-converting structure is disposed in another of the multiple openings. The first emitted light has a first sub-peak located between 400 nm and 500 nm and a first main peak located between 590 nm and 780 nm, and the second emitted light has a second sub-peak located between 400 nm and 500 nm and a second main peak located between 520 nm and 589 nm, wherein the normal intensity of the first sub-peak is less than the normal intensity of the second sub-peak. The normal intensity of the first emitted light is obtained by measuring and standardizing along a normal direction, and the normal intensity of the second emitted light is obtained by measuring and standardizing along the normal direction.

2. The light emitting device of claim 1, wherein When the normalized intensity of the first main peak is 100%, the normal intensity of the first sub-peak ranges from 0.1% to 10%.

3. The light emitting device of claim 1, wherein When the normalized intensity of the second primary peak is 100%, the normal intensity of the second sub-peak ranges from 0.1% to 20%.

4. The light emitting device of claim 1, wherein It also includes a first substrate and a second substrate, with the light-shielding structure disposed between the first substrate and the second substrate.

5. The light emitting device of claim 1, wherein The first light conversion structure includes a plurality of quantum dots, a fluorescent material or a phosphorescent material, and the first light modulation structure includes a reflective element and a chamfered mirror disposed on the reflective element.

6. The light emitting device of claim 1, wherein The first reflective layer comprises a metal or a white reflective material.

7. A light-emitting device, characterized in that, include: A plurality of first light-emitting units, wherein the plurality of first light-emitting units emit a first emitted light, and each of the plurality of first light-emitting units includes: A first light source, used to provide a first ray; A first reflective layer for reflecting the first light, wherein the first reflective layer is disposed on the side or lower surface of the first light source; A first light adjustment structure is disposed on the first light source and used to adjust the first light, wherein the first light passes through the first light adjustment structure; as well as A first light conversion structure is used to convert the first light ray into the first emitted light ray; A plurality of second light-emitting units, wherein the plurality of second light-emitting units emit a second emitted light, and each of the plurality of second light-emitting units includes: A second light source, used to provide a second ray; A second reflective layer for reflecting the second light, wherein the second reflective layer is disposed on the side or lower surface of the second light source; A second light adjustment structure is disposed on the second light source and used to adjust the second light beam, wherein the second light beam passes through the second light adjustment structure; and A second light conversion structure is used to convert the second light ray into the second emitted light; as well as A light-shielding structure includes multiple openings, wherein a first light-converting structure is disposed in one of the multiple openings, and a second light-converting structure is disposed in another of the multiple openings. The first emitted light has a first sub-peak located between 400 nm and 500 nm and a first main peak located between 590 nm and 780 nm, and the second emitted light has a second sub-peak located between 400 nm and 500 nm and a second main peak located between 520 nm and 589 nm, wherein the oblique intensity of the first sub-peak is less than the oblique intensity of the second sub-peak. The oblique intensity of the first emitted light is obtained by measuring and standardizing along an oblique direction, and the oblique intensity of the second emitted light is obtained by measuring and standardizing along the oblique direction.

8. The light emitting device of claim 7, wherein When the normalized intensity of the first main peak is 100%, the slant intensity of the first sub-peak ranges from 0.01% to 0.97%.

9. The light emitting device of claim 7, wherein the first and second light emitting devices are arranged in a vertical stack. When the normalized intensity of the second main peak is 100%, the slant intensity of the second sub-peak ranges from 0.01% to 1.95%.

10. The light emitting device of claim 7, wherein the first and second light emitting devices are arranged in a vertical stack. It also includes a first substrate and a second substrate, with the light-shielding structure disposed between the first substrate and the second substrate.

11. The light emitting device of claim 7, wherein the first and second light emitting devices are arranged in a vertical stack. The first light conversion structure includes a plurality of quantum dots, a fluorescent material or a phosphorescent material, and the first light modulation structure includes a reflective element and a chamfered mirror disposed on the reflective element.

12. The light emitting device of claim 7, wherein The first reflective layer comprises a metal or a white reflective material.

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