Display device

Abstract

According to an aspect of the disclosure, a display device includes a first substrate including a display area and a non-display area surrounding the display area; a plurality of light emitting diodes in the display area of the first substrate; a first electrode and a second electrode in the non-display area of the first substrate and spaced apart from each other; a plurality of structures between the first electrode and the second electrode and spaced apart from each other; and a connection layer on the plurality of structures and electrically connecting the first electrode and the second electrode.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2021-0182844, filed with the Korean Intellectual Property Office on December 20, 2021, the disclosure of which is incorporated herein by reference. Technical Field

[0003] This disclosure relates to a display device, and more specifically, to a display device that is easy to detect moisture penetration. Background Technology

[0004] Currently, with the advent of the mature information age, the field of display devices that visually express electrical information signals has developed rapidly, and research is constantly being conducted to improve the performance of various display devices, such as thinness, light weight, and low power consumption.

[0005] Unlike liquid crystal displays, light-emitting displays are self-emissive devices, eliminating the need for a separate light source. This allows them to be manufactured with low weight and thinness. Furthermore, their low-voltage operation offers advantages not only in power consumption but also in color accuracy, response time, viewing angle, and contrast ratio (CR). Therefore, they hold promise for applications across various fields. Summary of the Invention

[0006] One objective of this disclosure is to provide a display device that facilitates the detection of moisture penetration.

[0007] Another objective of this disclosure is to provide a display device for quantitatively determining the degree of water or oxygen penetration.

[0008] The purpose of this disclosure is not limited to the above-mentioned purposes, and other purposes not mentioned above will be clearly understood by those skilled in the art from the following description.

[0009] According to one aspect of this disclosure, a display device includes: a first substrate including a display area and a non-display area surrounding the display area; a plurality of light-emitting diodes in the display area of ​​the first substrate; a first electrode and a second electrode in the non-display area of ​​the first substrate and spaced apart from each other; a plurality of structures between the first electrode and the second electrode and spaced apart from each other; and a connection layer on the plurality of structures and electrically connecting the first electrode and the second electrode.

[0010] Further details of the exemplary embodiments are included in the detailed description and accompanying drawings.

[0011] According to this disclosure, the resistance of the bonding layer in the display device is measured by using a first electrode and a second electrode protruding to the outside of the display device to determine whether there is moisture penetration.

[0012] According to this disclosure, the degree of water penetration can be quantitatively determined by the resistance of the connecting layer.

[0013] The effects of this disclosure are not limited to those illustrated above; this specification includes a variety of other effects. Attached Figure Description

[0014] The above and other aspects, features, and other advantages of this disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, wherein:

[0015] Figure 1 This is a plan view of a display device according to an exemplary embodiment of the present disclosure;

[0016] Figure 2 It is along Figure 1 A sectional view taken from line II-II';

[0017] Figure 3 yes Figure 1 An enlarged plan view of part A;

[0018] Figure 4 It is along Figure 3 A sectional view taken by line IV-IV';

[0019] Figures 5A to 5E The manufacturing process of the display device according to exemplary embodiments of the present disclosure is shown in sequence; and

[0020] Figure 6 This is a cross-sectional view of a display device according to another exemplary embodiment of the present disclosure. Detailed Implementation

[0021] The advantages and features of this disclosure, as well as methods for implementing such advantages and features, will become clear from the exemplary embodiments and accompanying drawings described in detail below. However, this disclosure is not limited to the exemplary embodiments disclosed herein, but will be implemented in various forms. Exemplary embodiments are provided by way of example only, so that those skilled in the art can fully understand the disclosure and scope of this disclosure. Therefore, this disclosure will be limited only by the scope of the appended claims.

[0022] The shapes, dimensions, ratios, angles, quantities, etc., shown in the accompanying drawings to describe exemplary embodiments of this disclosure are merely examples, and this disclosure is not limited thereto. Throughout the specification, the same reference numerals generally denote the same elements. Furthermore, in the following description of this disclosure, detailed explanations of known related technologies may be omitted to avoid unnecessarily obscuring the subject matter. Terms such as “comprising,” “having,” and “including” as used herein are generally intended to allow for the addition of additional components, unless these terms are used in conjunction with the term “only.” Unless otherwise expressly stated, any reference to the singular may include the plural.

[0023] Even without explicit explanation, components are interpreted as including the normal tolerance range.

[0024] When using terms such as “above,” “over,” “below,” and “near” to describe the positional relationship between two parts, one or more parts may be located between the two parts unless the terms “immediately” or “directly” are used.

[0025] When one element or layer is placed "on" another element or layer, another layer or element can be directly inserted on the other element or between the element and the other element.

[0026] Although the terms "first," "second," etc., are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from other components. Therefore, the first component mentioned below can be the second component in the technical concept of this disclosure.

[0027] Throughout the specification, the same reference numerals generally denote the same elements.

[0028] For ease of description, the dimensions and thickness of each component shown in the accompanying drawings are illustrated, and this disclosure is not limited to the dimensions and thickness of the illustrated components.

[0029] Features of the various embodiments of this disclosure may be partially or wholly dependent on or combined with each other, and may be technically associated and operable in various ways, and the embodiments may be performed independently or in association with each other.

[0030] This disclosure will be described in detail below with reference to the accompanying drawings.

[0031] Figure 1 This is a plan view of a display device according to an exemplary embodiment of the present disclosure. Figure 1 For ease of description, only the first substrate 100, the second substrate 120, the first electrode 142, and the second electrode 143 are shown among the various components of the display device 100.

[0032] Reference Figure 1 The display device 100 according to an exemplary embodiment of the present disclosure includes: a first substrate 100, a second substrate 120, a first electrode 142 and a second electrode 143.

[0033] The first substrate 110 is a substrate that supports and protects the various components of the display device 100. The first substrate includes a display area AA and a non-display area NA. The first substrate 110 can be formed of a flexible glass or plastic material. When the first substrate 110 is formed of a plastic material, for example, the first substrate can be formed of polyimide (PI), but is not limited thereto.

[0034] The display area AA is located in the central portion of the first substrate 110 and can display images in the display area of ​​the display device 100. Display elements and various driving elements for driving the display elements can be disposed in the display area AA. For example, the display element may be composed of a light-emitting diode 160 (including an anode 161, a light-emitting layer 162, and a cathode 163), which will be described below. Furthermore, various driving elements for driving the display elements (e.g., transistors 150, capacitors, or wiring) can be disposed in the display area AA.

[0035] The display area AA may include multiple sub-pixels SP. A sub-pixel SP is the smallest unit constituting a plane, and each of the multiple sub-pixels SP may include a light-emitting diode 160 and driving circuitry. The multiple sub-pixels SP may be defined as the intersection area of ​​multiple gate lines arranged along a first direction and multiple data lines arranged along a second direction different from the first direction. Here, the first direction may be... Figure 1 The horizontal direction, and the second direction can be Figure 1 The sub-pixels SP can emit light in the vertical direction, but are not limited to this. Each of the multiple sub-pixels SP can emit light with a different wavelength. For example, the multiple sub-pixels SP can include red sub-pixels, green sub-pixels, and blue sub-pixels. In addition, the multiple sub-pixels SP can also include white sub-pixels.

[0036] The driving circuit for the sub-pixel SP is a circuit used to drive the light-emitting diode 160. For example, the driving circuit may include a switching transistor, a driving transistor, and a capacitor. The driving circuit may be electrically connected to signal lines (e.g., gate lines and data lines connected to gate drivers and data drivers disposed in the non-display area NA).

[0037] The non-display area NA is located in the peripheral region of the first substrate 110, and an image may not be displayed in the non-display area. The non-display area NA may be located around the display area AA, but is not limited thereto. Various components for driving the multiple sub-pixels SP located in the display area AA may be located in the non-display area NA. For example, a driver IC, driver circuit, signal lines, and flexible film for supplying signals for driving the multiple sub-pixels SP may be provided. In this case, the driver IC may include a gate driver and a data driver.

[0038] The second substrate 120 is configured to cover the first substrate 110. The second substrate 120 may be a substrate for protecting various components disposed on the first substrate 110. The second substrate 120 is joined to the first substrate 110 by a sealing member 130, which will be described below, to seal the components of the display device 100. The second substrate 120 may be formed of a flexible glass or plastic material, but is not limited thereto.

[0039] The first electrode 142 and the second electrode 143 are disposed in the non-display area NA of the first substrate 110. The first electrode 142 and the second electrode 143 may be configured to protrude beyond the second substrate 120. The first electrode 142 and the second electrode 143 may be electrodes for detecting moisture penetration into the display device 100, as described above. Figure 3 and Figure 4 To describe it in more detail.

[0040] Figure 2 It is along Figure 1 A sectional view taken from line II-II'. Figure 2 For ease of description, the second substrate 120 is omitted.

[0041] Reference Figure 2 The display device 100 includes a first substrate 110, a protective layer 141, a transistor 150, a light-emitting diode 160, and a packaging unit 170. The display device 100 can be implemented as a top-emitting display device, but is not limited thereto.

[0042] A protective layer 141 is disposed on the first substrate 110. The protective layer 141 may be configured to overlap with the transistor 150. The protective layer 141 is formed of a metallic material to be electrically connected to the source 153 or drain 154 of the transistor 150, but is not limited thereto. For example, the protective layer 141 may be formed of molybdenum (Mo) and may be electrically connected to the drain 154, but is not limited thereto. The protective layer 141 may be selectively formed only in necessary regions. For example, the protective layer 141 may be configured to overlap with the transistor 150 used as a driving transistor, but is not limited thereto. That is, the protective layer 141 may be disposed below transistors other than the driving transistor.

[0043] The protective layer 141 can prevent potential generated on the surface of the first substrate 110 and block light from entering from the outside. Specifically, the protective layer 141 can overlap with the active layer 151 of the transistor 150. Therefore, the protective layer 141 can suppress the degradation of the channel region of the active layer 151. In addition, the protective layer 141 protects the transistor 150 from the influence of charged particles generated by the first substrate 110 and can minimize the influence on the charge flowing in the channel of the transistor 150. Therefore, the threshold voltage shift phenomenon and the current drop phenomenon of the transistor 150 are improved, and the reliability of the display device 100 can be improved.

[0044] The protective layer 141 is formed of a metallic material, thus the protective layer 141 and the active layer 151 can be used as elements forming a capacitor. At this time, when the protective layer 141 is electrically floated, the parasitic capacitance fluctuates, and the offset of the transistor's threshold voltage may change. This can lead to visual defects such as variations in brightness. Therefore, the protective layer 141 is electrically connected to either the source 153 or the drain 154 to keep the parasitic capacitance constant. That is, the same voltage as that applied to the source 153 or the drain 154 can be applied to the protective layer 141.

[0045] A buffer layer 111 is disposed on the first substrate 110 and the protective layer 141. The buffer layer 111 can reduce the penetration of moisture or impurities through the first substrate 110. Furthermore, the buffer layer 111 can protect the transistor 140 from impurities (e.g., alkaline ions) leaking from the first substrate 110. Additionally, the buffer layer 111 can enhance the adhesion between the layers formed on the buffer layer and the first substrate 110. The buffer layer 111 can be formed as silicon nitride (SiN). x ) or silicon dioxide (SiO) x A single layer of silicon nitride (SiN), or formed as silicon nitride. x ) or silicon dioxide (SiO) x The first substrate 110 may have multiple layers, but is not limited to these. The buffer layer 111 is not a necessary component, and may be omitted depending on the type and material of the first substrate 110 or the structure and type of the transistor 150. In some cases, the buffer layer 111 may also be disposed between the first substrate 110 and the protective layer 141.

[0046] Transistor 150 is disposed on buffer layer 111. Transistor 150 can be used as a driving element for driving the light-emitting diode 160 of display area AA. Transistor 150 includes: active layer 151, gate 152, source 153, and drain 154. Figure 2 The transistor 150 shown is a driving transistor and a top-gate thin-film transistor (where the gate 152 is disposed on the active layer 151). However, it is not limited to this, and the transistor 150 can be implemented as a bottom-gate transistor.

[0047] exist Figure 2 The image shows only the driving transistor 150 among the various transistors included in the display device 100, but other transistors, such as the switching transistor, may also be provided.

[0048] An active layer 151 is disposed on a buffer layer 111. The active layer 151 is the region in which a channel is formed when the transistor 150 is driven. The active layer 151 may be formed of oxide semiconductor, amorphous silicon (a-Si), polycrystalline silicon (poly-Si), or organic semiconductor.

[0049] A gate insulating layer 112 is disposed on the active layer 151. The gate insulating layer 112 is a layer used to electrically insulate the gate 151 from the active layer 152 and can be formed of an insulating material. For example... Figure 2 As shown, the gate insulating layer 112 can be patterned on the active layer 151 and have the same width as the gate 152, or it can be formed on the entire first substrate 110, but is not limited thereto. The gate insulating layer 112 can be formed as silicon nitride (SiN) as an inorganic material. x ) or silicon dioxide (SiO) x A single layer of silicon nitride (SiN) can be formed, or it can be formed as a single layer of silicon nitride (SiN). x ) or silicon dioxide (SiO) x (Multi-layered, but not limited to)

[0050] A gate 152 is disposed on a gate insulating layer 112. The gate 152 is disposed on the gate insulating layer 112 to overlap with the channel region of the active layer 151. The gate 152 may be any one or an alloy of two or more of the following metals, such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or a multilayer of the above metals, but is not limited thereto.

[0051] An interlayer insulating layer 113 is disposed on the gate 152. The interlayer insulating layer 113 may be formed as silicon nitride (SiN), an inorganic material. x ) or silicon dioxide (SiO) x A single layer of silicon nitride (SiN) can be formed, or it can be formed as a single layer of silicon nitride (SiN). x ) or silicon dioxide (SiO) x The active layer 151 has multiple layers, but is not limited to these. A contact hole is formed in the interlayer insulating layer 113, through which the source electrode 151 and the drain electrode 154 pass to contact the source and drain regions of the active layer 151, respectively.

[0052] Source 153 and drain 154 are disposed on interlayer insulating layer 113. Source 153 and drain 154 are disposed on the same layer but spaced apart from each other. Source 153 and drain 154 are electrically connected to active layer 151 through contact holes in interlayer insulating layer 113. Source 153 and drain 154 can be any one or an alloy of two or more of various metal materials such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu), or a multilayer of the above metal materials, but are not limited thereto.

[0053] A passivation layer 114 is disposed on transistor 150. The passivation layer 114 can be configured to cover the source 153, drain 154, and interlayer insulating layer 113. The passivation layer 114 can be formed as silicon nitride (SiN). x ) or silicon dioxide (SiO) x A single layer of silicon nitride (SiN) can be formed, or it can be formed as a single layer of silicon nitride (SiN). x ) or silicon dioxide (SiO) x (Multi-layered, but not limited to)

[0054] A planarization layer 115 is disposed on the passivation layer 114. The planarization layer 115 is an insulating layer used to protect the transistor 150 and planarize the upper part of the transistor 150. A contact hole exposing the drain 154 of the transistor 150 is formed on the planarization layer 115. However, it is not limited to this; a contact hole exposing the source 153 may also be formed on the planarization layer 115. The planarization layer 115 may be formed from one of acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene-based resin, polyphenylene sulfide-based resin, benzocyclobutene, and photoresist, but is not limited to this.

[0055] A light-emitting diode 160 is disposed on a planarization layer 115. The light-emitting diode 160 includes an anode 161, a light-emitting layer 162, and a cathode 163.

[0056] Anode 161 is disposed on planarization layer 115. Anode 161 is configured to correspond to each of the plurality of sub-pixels SP. Anode 161 may be electrically connected to the drain 154 of transistor 150. However, anode 151 may be configured to be electrically connected to the source 153 of transistor 150 depending on the type of transistor 150, the design of the driving circuit, etc.

[0057] The anode 161 can be formed of a conductive material with a high work function and supplies holes to the light-emitting layer 162. The anode 161 can be formed as a multilayer structure comprising a transparent conductive film and an opaque conductive film with high reflectivity. The transparent conductive film can be formed of a material with a relatively high work function (e.g., indium tin oxide (ITO) or indium zinc oxide (IZO)). The opaque conductive film can be formed as a single-layer or multilayer structure comprising an alloy of Al, Ag, Cu, Pb, Mo, Ti, or the aforementioned metals. However, the material of the anode 161 is not limited to these.

[0058] A dam 116 is disposed on the planarization layer 115 and the anode 161. The dam 116 may be formed on the planarization layer 115 to cover the edge of the anode 161. The dam 116 is an insulating layer disposed between multiple sub-pixels SP to divide the multiple sub-pixels SP. The dam 116 may be an organic insulating material. For example, the dam 116 may be formed from one of acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene resin, polyphenylene sulfide resin, benzocyclobutene, and photoresist, but is not limited thereto.

[0059] A light-emitting layer 162 is disposed on the anode 162 and the embankment 116. The light-emitting layer 162 can be an organic layer that emits light of a specific color. For example, the light-emitting layer 162 can be one of a red light-emitting layer, a green light-emitting layer, a blue light-emitting layer, and a white light-emitting layer. When the light-emitting layer 162 is composed of a white light-emitting layer, a color filter can be further disposed above the light-emitting diode 160. The light-emitting layer 162 may also include various layers such as a hole transport layer, a hole injection layer, a hole blocking layer, an electron injection layer, an electron blocking layer, or an electron transport layer.

[0060] A cathode 163 is disposed on the light-emitting layer 162. The cathode 163 can be formed as a single layer covering the entire surface of the first substrate 110. That is, the cathode 163 can be a common layer formed for multiple sub-pixels SP. The cathode 163 supplies electrons to the light-emitting layer 162, and thus the cathode can be formed of a conductive material with a low work function. For example, the cathode 163 can be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), a metal alloy such as MgAg, or a ytterbium (Yb) alloy. Alternatively, the cathode 163 may also include a metal doped layer, but is not limited thereto.

[0061] An encapsulation unit 170 is disposed on the light-emitting diode 160. For example, the encapsulation unit 170 is disposed on the cathode 163 to cover the light-emitting diode 160. The encapsulation unit 170 protects the light-emitting diode 160 from the influence of external moisture or oxygen penetrating into the display device 100. The encapsulation unit 170 may have a structure in which inorganic and organic layers are stacked alternately. The encapsulation unit 170 includes a first encapsulation layer 171, a foreign matter covering layer 172, and a second encapsulation layer 173.

[0062] A first encapsulation layer 171 is disposed on the cathode 163 to inhibit the penetration of moisture or oxygen. The first encapsulation layer 171 may be made of, for example, silicon nitride (SiN). x ), silicon oxynitride (SiN) x O y ), silicon dioxide (SiO) x ) or aluminum oxide (Al y O z Inorganic materials are formed, but not limited to this.

[0063] A foreign matter capping layer 172 is disposed on the first encapsulation layer 171 to planarize the surface. Furthermore, the foreign matter capping layer 172 can cover foreign matter or particles that may be generated during the manufacturing process. The foreign matter capping layer 172 can be made of, for example, silicon carbide (SiO2). x C z It is formed from organic materials such as acrylic resin or epoxy resin, but is not limited thereto.

[0064] The second encapsulation layer 173 is disposed on the foreign matter covering layer 172 and, similar to the first encapsulation layer 171, can inhibit the penetration of moisture or oxygen. The second encapsulation layer 173 can be made of, for example, silicon nitride (SiN). x ), silicon oxynitride (SiN) x O y ), silicon dioxide (SiO) x ) or aluminum oxide (Al y O z The second encapsulation layer 173 may be formed of an inorganic material, but is not limited to this. The second encapsulation layer 173 may be formed of the same or different material as the first encapsulation layer 171.

[0065] Figure 3 yes Figure 1 A magnified plan view of part A. Figure 4 It is along Figure 3 A sectional view taken by line IV-IV';

[0066] Reference Figure 3 and Figure 4 The display device 100 includes a first electrode 142, a second electrode 143, a plurality of structures 117 and 118, and a connection layer 164 disposed in the non-display area NA.

[0067] The first electrode 142 and the second electrode 143 are disposed in the non-display area NA of the first substrate 110. The first electrode 142 and the second electrode 143 may be configured to be spaced apart from each other. Figure 3 As shown, the first electrode 142 and the second electrode 143 can be formed to protrude to the outside of the second substrate 120 and the sealing member 130. That is, the first electrode 142 and the second electrode 143 can extend from the inside to the outside of the display device 100. Therefore, after the manufacturing process of the display device 100 is completed, moisture penetration of the display device 100 can be detected by the first electrode 142 and the second electrode 143. The first electrode 142 and the second electrode 143 can be formed by the same process as the protective layer 141. That is, the first electrode 142 and the second electrode 143 can be formed of the same material as the protective layer 141 and formed on the same layer as the protective layer 141. For example, the first electrode 142 and the second electrode 143 can be formed of molybdenum (Mo), but are not limited thereto.

[0068] Multiple structures 117 and 118 can be disposed between the first electrode 142 and the second electrode 143, spaced apart from each other. That is, multiple structures 117 and 118 can be configured to have a space S between them. Multiple structures 117 and 118 include the first structure 117 and the second structure 118.

[0069] The first structure 117 is configured to overlap with each of the first electrode 142 and the second electrode 143. That is, the first structure 117 can be configured as a pair. The first structure 117 is configured to cover a portion of each of the first electrode 142 and the second electrode 143. The cross-section of the first structure 117 can be formed to have a trapezoidal shape. The first structure 117 can be made of the same material as the embankment 116 and formed by the same process. For example, the first structure 117 can be formed from one of acrylic resin, epoxy resin, phenolic resin, polyamide-based resin, polyimide-based resin, unsaturated polyester-based resin, polyphenylene-based resin, polyphenylene sulfide-based resin, benzocyclobutene, and photoresist, but is not limited thereto.

[0070] A second structure 118 is disposed between a pair of first structures 117. Multiple second structures 118 are spaced apart from each other. The cross-section of the second structure 118 can be formed with an inverted trapezoidal shape. The multiple second structures 118 can be formed of the same material as the first structures 117 and the embankment 116, but are not limited thereto. That is, the multiple second structures 118 can be formed of a different material than the first structures 117 and the embankment 116. The multiple second structures 118 can be formed of one of acrylic resin, epoxy resin, phenolic resin, polyamide-based resin, polyimide-based resin, unsaturated polyester-based resin, polyphenylene-based resin, polyphenylene sulfide-based resin, benzocyclobutene, and photoresist, but are not limited thereto.

[0071] A connection layer 164 is disposed on the plurality of structures 117 and 118. The connection layer 164 can electrically connect the first electrode 142 and the second electrode 143. The connection layer 164 can be made of the same material as the cathode 163 and formed by the same process. For example, the connection layer 164 can be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), a metal alloy such as MgAg, or a ytterbium (Yb) alloy. Alternatively, the connection layer 164 may also include a metal doped layer, but is not limited thereto.

[0072] The portions of the connecting layer 164 corresponding to each of the plurality of structures 117 and 118 can be formed continuously. That is, the connecting layer 164 can be integrally formed as a single layer on the plurality of structures 117 and 118. In this case, the thickness of the portion of the connecting layer 164 corresponding to the space S between the plurality of structures 117 and 118 can be formed to be less than the thickness of the portion of the connecting layer 164 in direct contact with the plurality of structures 117 and 118. Therefore, when moisture penetration occurs in the display device 100, the thinner portion of the connecting layer 164 can react more sensitively with moisture or oxygen than the other portions. Therefore, whether moisture has penetrated into the display device 100 can be detected by measuring the resistance change of the connecting layer 164.

[0073] More specifically, similar to cathode 163, the connecting layer 164 can be formed of a material with excellent step coverage. Therefore, when the connecting layer 164 is deposited on the plurality of spaced-apart structures 117 and 118, the material of the connecting layer 164 can grow not only on the upper surfaces of the plurality of structures 117 and 118, but also laterally. Thus, the material of the connecting layer 164 deposited on the respective upper surfaces of the plurality of structures 117 and 118 can be connected to each other through lateral growth. That is, the connecting layer 164 can be formed on the space S where the plurality of structures 117 and 118 are not located. However, the connecting layer 164 in the region corresponding to space S is not directly deposited on the upper surfaces of the plurality of structures 117 and 118, and thus its thickness can be relatively thinner than in other regions. Specifically, the thinner regions of the connecting layer 164 can be exposed through space S. Therefore, the thinner regions of the connecting layer 164 can readily react with moisture or oxygen.

[0074] The distance between the multiple structures 117 and 118 can be 0.05 to 0.15 times the height of the multiple structures 117 and 118. In this case, the distance between the multiple structures 117 and 118 can refer to the shortest distance S of the space between the multiple structures 117 and 118. In other words, this represents the distance between the upper surfaces of the multiple adjacent structures 117 and 118. When the distance between the multiple structures 117 and 118 is less than 0.05 times the height of the multiple structures 117 and 118, sufficient process margin for forming the multiple structures 117 and 118 may not be guaranteed. When the distance between the multiple structures 117 and 118 is greater than 0.15 times the height of the multiple structures 117 and 118, the connecting layer 164 deposited on the multiple structures 117 and 118 may break.

[0075] The step coverage of the deposited material in the connecting layer 164 can be above 30%. When the step coverage of the deposited material in the connecting layer 164 is less than 30%, the connecting layer 164 may break in the region corresponding to space S.

[0076] The thickness of the connecting layer 164 can be 0.1 to 0.2 times the height of the multiple structures 117 and 118. In this case, the thickness of the connecting layer 164 can refer to the thickness of its thickest region. When the thickness of the connecting layer 164 is less than 0.1 times the height of the multiple structures 117 and 118, the connecting layer 164 deposited on the multiple structures 117 and 118 may break. That is, in the thickness direction, the connecting layer 164 grows relatively thin, which may be insufficient for lateral growth. When the thickness of the connecting layer 164 is greater than 0.2 times the height of the multiple structures 117 and 118, the accuracy of moisture penetration detection may decrease. That is, even if the connecting layer 164 reacts with moisture or oxygen, it may not be sufficient to cause a change in electrical resistance, thus potentially reducing detection accuracy.

[0077] At the same time, Figure 3 and Figure 4 The image shows a configuration of four second structures 118, but is not limited to this. Furthermore, in... Figure 3 and Figure 4 The diagram shows a constant distance between multiple structures 117 and 118, but it is not limited to this. That is, the distance between multiple structures 117 and 118 can be configured to increase or decrease in a specific region. For example, the distance between multiple structures 117 and 118 may be the largest at the center and may narrow towards the outer edge.

[0078] In the non-display area NA, a first encapsulation layer 171 and a second encapsulation layer 173 are disposed on the interconnect layer 164, the first electrode 142, the second electrode 143, and the first substrate 110. The first encapsulation layer 171 and the second encapsulation layer 173 can prevent moisture and oxygen from penetrating into the interconnect layer 164, the first electrode 142, the second electrode 143, and the first substrate 110. Furthermore, even in… Figure 4 The image shows that the foreign object covering layer 142 is only provided in the display area AA; however, the foreign object covering layer 142 can also be provided in a part of the non-display area NA.

[0079] The first substrate 110 and the second substrate 120 can be joined by a sealing member 130. The sealing member 130 can prevent the space between the first substrate 110 and the second substrate 120 from being exposed to the outside. The sealing member 130 can be disposed on the first encapsulation layer 171 and the second encapsulation layer 173, but is not limited thereto. That is, the sealing member 130 can be disposed in contact with the first substrate 110 and the second substrate 120 at the outside of the first encapsulation layer 171 and the second encapsulation layer 173.

[0080] Generally, when moisture seepage occurs in a display device, internal components such as transistors or light-emitting diodes are damaged. To detect moisture seepage, the display device is exposed to a high-temperature and high-humidity environment for an extended period, and an illumination inspection is performed to determine the presence of defects. However, this method is time-consuming and not easily quantitatively assessable. Furthermore, besides moisture seepage, the defect can have various other causes, thus limiting the analysis of the cause of the defect.

[0081] The display device 100 according to an embodiment includes a first electrode 142 and a second electrode 143 for easy detection of moisture penetration. Specifically, the first electrode 142 and the second electrode 143 can protrude from the interior of the display device, which is sealed by the first substrate 110, the second substrate 120, and the sealing member 130, to the exterior of the second substrate 120 and the sealing member 130. Furthermore, the first electrode 142 and the second electrode 143 can be electrically connected via a connecting layer 164. In this case, the connecting layer 164 can be disposed in the display device 100. Therefore, the resistance change of the connecting layer 164 disposed in the display device 100 can be measured by the first electrode 142 and the second electrode 143 protruding to the exterior of the display device 100. By doing so, it can be determined whether moisture has penetrated into the display device 100.

[0082] Specifically, the connecting layer 164 can be deposited on a plurality of structures 117 and 118 spaced apart from each other. Here, a space S can be present between the plurality of structures 117 and 118. Therefore, a portion of the connecting layer 164 is in direct contact with the plurality of structures 117 and 118, while the remaining portion is not in contact with the plurality of structures 117 and 118 but can be exposed through the space S. Thus, when moisture or oxygen permeates into the display device 100, the connecting layer 164 can readily react with moisture or oxygen through the exposed area.

[0083] The thickness of the region of the connecting layer 164 corresponding to space S can be smaller than the region corresponding to the plurality of structures 117 and 118. Specifically, the connecting layer 164 can be formed of a material with excellent step coverage. Therefore, when depositing the connecting layer 164, some of the deposited material of the connecting layer 164 can grow not only in the thickness direction from the upper surface of the plurality of structures 117 and 118, but also in the lateral direction. That is, some of the deposited material of the connecting layer 164 can be grown to cover space S with a relatively small thickness. Specifically, the thinner portion of the connecting layer 164 can be the region exposed to space S. Therefore, the small thickness allows the connecting layer 164 to react more sensitively with moisture or oxygen. Therefore, moisture penetration of the display device 100 can be detected more accurately.

[0084] The display device 100 according to an embodiment of the present disclosure detects whether moisture penetration has occurred by measuring the resistance change of the interconnect layer 164, thereby quantitatively determining the degree of moisture penetration. Specifically, the degree of corrosion of the surface of the interconnect layer 164 can be adjusted according to the extent to which moisture or oxygen penetrates the display device 100. When a large amount of moisture or oxygen penetrates, the interconnect layer 164 is strongly corroded, and the resistance change may be relatively large. Conversely, when a small amount of moisture or oxygen penetrates, the degree of corrosion of the interconnect layer 164 is small, and the resistance may increase slightly. Therefore, the degree of moisture penetration can be quantitatively determined by the resistance change of the interconnect layer 164, and the reliability of the display device 100 can be evaluated.

[0085] Furthermore, the display device 100 according to the exemplary embodiments of this disclosure can readily identify defects caused by moisture penetration. That is, a change in the resistance of the bonding layer 164 can be generated by the reaction between the bonding layer 164 and moisture or oxygen. Therefore, among the various causes of defects that may occur in the display device 100, moisture penetration defects can be identified more accurately.

[0086] Figures 5A to 5E The manufacturing process of the display device according to exemplary embodiments of the present disclosure is shown in sequence.

[0087] Reference Figure 5A A protective layer 141, a first electrode 142, and a second electrode 143 are formed on the first substrate 110. The protective layer 141 can be disposed in the display area AA, and the first electrode 142 and the second electrode 143 can be disposed in the non-display area NA. The protective layer 141, the first electrode 142, and the second electrode 143 can be made of the same material and formed using the same process.

[0088] Reference Figure 5B In the display area AA, a buffer layer 111, an active layer 151, a gate insulating layer 112, a gate 152, an interlayer insulating layer 113, a source 153, a drain 154, a passivation layer 114, a planarization layer 115, and an anode 161 are formed sequentially.

[0089] Reference Figure 5C A dam 116 and a pair of first structures 117 are formed. The dam 116 can be disposed on the planarization layer 115 and the anode 161 in the display area AA. Each pair of first structures 117 can be disposed in the non-display area NA to cover a portion of the first electrode 142 and the second electrode 143. The dam 116 and the pair of first structures 117 can be formed from the same material and using the same process. The dam 116 and the pair of first structures 117 can be formed with a trapezoidal cross-section using a positive photoresist.

[0090] Reference Figure 5D A plurality of second structures 118 are formed between a pair of first structures 117. The plurality of second structures 118 may be formed in a non-display area NA as spaced apart from each other. The plurality of second structures 118 may be formed of the same material as the pair of first structures 117 and the embankment 116, but are not limited thereto. The plurality of second structures 118 may be formed with an inverted trapezoidal cross section using a negative photoresist.

[0091] At the same time, Figure 5D In the illustration, multiple second structures 118 are shown as four, but are not limited to this. Furthermore, depending on the design, the distances between the multiple second structures 118 may be the same or different from each other.

[0092] Reference Figure 5E A light-emitting layer 162 and a cathode 163 are formed in the display area AA, and then a connecting layer 164 is formed in the non-display area NA. At this time, after the formation of the light-emitting layer 162, the cathode 163 and the connecting layer 164 can be formed simultaneously. That is, the cathode 163 and the connecting layer 164 can be formed from the same material and using the same process. Specifically, the connecting layer 164 can be formed as a single layer to cover the space S on the plurality of spaced-apart second structures 118. In other words, the deposited materials of the cathode 163 and the connecting layer 164 have excellent step coverage and extend from the upper surface of the plurality of second structures 118, thereby covering the space S.

[0093] Meanwhile, when the multiple second structures 118 are spaced apart from each other and have trapezoidal cross-sections, the space between the upper surfaces of the multiple second structures relatively increases. In this case, even if the connecting layer is formed of a material with excellent step coverage, the connecting layers provided on the multiple second structures may be disconnected and not connected to each other. Therefore, the cross-sections of the multiple second structures 118 can preferably be formed as inverted trapezoids.

[0094] After forming the cathode 163 and the connecting layer 164, a first encapsulation layer 171, a foreign matter covering layer 172, and a second encapsulation layer 173 are formed. Furthermore, the first substrate 110 and the second substrate 120 can be joined by the sealing member 130.

[0095] Figure 6 This is a cross-sectional view of a display device according to another exemplary embodiment of the present disclosure. In addition to the plurality of structures 617 and 618 and the connecting layer 661, Figure 6 The display device 600 and Figures 1 to 4 The display device 100 shown is basically the same, so unnecessary descriptions will be omitted.

[0096] Reference Figure 6 In the non-display area NA of the substrate 110, a first electrode 142, a second electrode 143, multiple structures 617 and 618, and a connection layer 661 are provided.

[0097] Multiple structures 617 and 618 can be disposed between the first electrode 142 and the second electrode 143, spaced apart from each other. That is, the multiple structures 617 and 618 can be configured to have a space S between them.

[0098] The first structure 617 is configured to overlap with each of the first electrode 142 and the second electrode 143. That is, the first structure 617 can be configured as a pair. The first structure 617 can be configured to cover a portion of each of the first electrode 142 and the second electrode 143. The cross-section of the first structure 617 can be formed to have a trapezoidal shape. The first structure 617 can be made of the same material as the planarization layer 115 and formed by the same process. For example, the first structure 617 is formed from one of acrylic resin, epoxy resin, phenolic resin, polyamide-based resin, polyimide-based resin, unsaturated polyester-based resin, polyphenylene-based resin, polyphenylene sulfide-based resin, benzocyclobutene, and photoresist, but is not limited thereto.

[0099] A second structure 618 is disposed between a pair of first structures 617. Multiple second structures 618 are spaced apart from each other. The cross-section of the second structure 618 can be formed as an inverted trapezoid. The multiple second structures 618 can be formed of the same material as the first structures 617 and the planarization layer 115, but are not limited thereto. That is, the multiple second structures 618 can be formed of a different material than the first structures 617 and the planarization layer 115. The multiple second structures 618 can be formed of one of acrylic resin, epoxy resin, phenolic resin, polyamide-based resin, polyimide-based resin, unsaturated polyester-based resin, polyphenylene-based resin, polyphenylene sulfide-based resin, benzocyclobutene, and photoresist, but are not limited thereto.

[0100] A connection layer 661 is disposed on multiple structures 617 and 618. The connection layer 661 can electrically connect the first electrode 142 and the second electrode 143. The connection layer 661 can be made of the same material as the anode 161 and formed by the same process. For example, the connection layer 661 can be formed of a single-layer or multi-layer structure of a transparent conductive material including, for example, indium tin oxide (ITO) or indium zinc oxide (IZO), Al, Ag, Cu, Pb, Mo, Ti or alloys of the aforementioned metals, but is not limited thereto.

[0101] The portions of the connecting layer 661 corresponding to each of the plurality of structures 617 and 618 can be formed continuously. That is, the connecting layer 661 can be integrally formed as a single layer on the plurality of structures 617 and 618. In this case, the thickness of the portion of the connecting layer 661 corresponding to the space S between the plurality of structures 617 and 618 can be made smaller than the thickness of the portion of the connecting layer 661 in direct contact with the plurality of structures 617 and 618. Therefore, when moisture penetration occurs in the display device 600, the thinner portion of the connecting layer 661 can react more sensitively with moisture or oxygen than other portions. Therefore, moisture penetration defects in the display device 600 can be detected by measuring the resistance change of the connecting layer 661.

[0102] The distance between the multiple structures 617 and 618 can be 0.05 to 0.15 times the height of the multiple structures 617 and 618. The thickness of the connecting layer 661 can be 0.1 to 0.2 times the height of the multiple structures 617 and 618. The step coverage of the deposited material in the connecting layer 661 can be more than 30%.

[0103] At the same time, Figure 6 The image shows a configuration of four second structures 618, but is not limited to this. Furthermore, in... Figure 6 The diagram shows a constant distance between multiple structures 617 and 618, but this is not a limitation. That is, the distance between the multiple structures 617 and 618 can be configured to increase or decrease in specific regions. For example, the distance between the multiple structures 617 and 618 may be maximum at the center and may narrow towards the outer edges.

[0104] Exemplary embodiments of this disclosure may also be described as follows:

[0105] According to one aspect of this disclosure, a display device includes: a first substrate including a display area and a non-display area surrounding the display area; a plurality of light-emitting diodes in the display area of ​​the first substrate; a first electrode and a second electrode in the non-display area of ​​the first substrate and spaced apart from each other; a plurality of structures between the first electrode and the second electrode and spaced apart from each other; and a connection layer on the plurality of structures and electrically connecting the first electrode and the second electrode.

[0106] The multiple structures may include: a pair of first structures that overlap with a first electrode and a second electrode, respectively; and a plurality of second structures that are spaced apart from the pair of first structures.

[0107] A pair of first structures can be configured to have trapezoidal cross sections, and multiple second structures can be configured to have inverted trapezoidal cross sections.

[0108] The corresponding parts of the connection layer to each of the multiple structures can be configured sequentially.

[0109] The thickness of the portion of the connecting layer corresponding to the space between the connecting layer and the multiple structures can be less than the thickness of the portion of the connecting layer that contacts the multiple structures.

[0110] The display device may also include a transistor in the display area and connected to a plurality of light-emitting diodes; and a protective layer below and overlapping the transistor. The first electrode, the second electrode, and the protective layer may be made of the same material.

[0111] Multiple light-emitting diodes (LEDs) may include an anode, an emissive layer, and a cathode. A dam covering a portion of the anode may be disposed beneath the emissive layer. At least one of the multiple structures and the dam may be made of the same material. The interconnect layer and the cathode may be made of the same material.

[0112] The display device may further include: a transistor located in the display area and connected to a plurality of light-emitting diodes; a planarization layer covering the transistor; and anodes of the plurality of light-emitting diodes disposed on the planarization layer. At least one of the plurality of structures and the planarization layer may be made of the same material. The interconnect layer and the anodes may be made of the same material.

[0113] The display device may further include: a second substrate covering the first substrate; and a sealing member joining the first substrate and the second substrate. The first electrode and the second electrode may protrude from the region overlapping the second substrate to the outside of the second substrate and the sealing member.

[0114] The connecting layer can be placed inside the sealing component.

[0115] Whether water penetration has occurred can be detected by measuring the resistance change of the connecting layer using the first and second electrodes.

[0116] Although exemplary embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto and can be implemented in many different forms without departing from the technical concept of the present disclosure. Therefore, the exemplary embodiments of the present disclosure are provided for illustrative purposes only and are not intended to limit the technical concept of the present disclosure. The scope of the technical concept of the present disclosure is not limited thereto. Therefore, it should be understood that the above exemplary embodiments are exemplary in all respects and do not limit the present disclosure. The scope of protection of the present invention should be determined by the appended claims, and all technical concepts within the equivalent scope thereof should be understood to fall within the scope of the present disclosure.

Claims

1. A display device, comprising: A first substrate includes a display area and a non-display area surrounding the display area; Multiple light-emitting diodes are located in the display area of ​​the first substrate; The first electrode and the second electrode are located in the non-display area of ​​the first substrate and are spaced apart from each other. Multiple structures are disposed on the first substrate and between the first electrode and the second electrode, and a space is formed between the multiple structures; as well as A connecting layer is provided on the plurality of structures, and electrically connects the first electrode and the second electrode. The lower surface of the first region of the connecting layer is exposed to the space formed between the plurality of structures. The first electrode and the second electrode protrude to the outside of the display device, and Wherein, the thickness of the first region corresponding to the space between the connecting layer and the plurality of structures is less than the thickness of the second region of the connecting layer that contacts the plurality of structures. The plurality of structures include: A pair of first structures, overlapping the first electrode and the second electrode respectively; and Multiple second structures are located between the pair of first structures and spaced apart from each other. The cross-sections of the pair of first structures are configured to be trapezoidal, and the cross-sections of the plurality of second structures are configured to be inverted trapezoidal.

2. The display device according to claim 1, wherein, The multiple parts of the connection layer are configured consecutively.

3. The display device according to claim 1, further comprising: A transistor is located in the display area and is connected to the plurality of light-emitting diodes; as well as A protective layer is located below and overlaps the transistor. The first electrode, the second electrode, and the protective layer are all made of the same material.

4. The display device according to claim 1, wherein, The plurality of light-emitting diodes include an anode, a light-emitting layer, and a cathode. A dam covering a portion of the anode is provided below the light-emitting layer. Wherein, at least one of the plurality of structures and the embankment are made of the same material, and The connecting layer and the cathode are made of the same material.

5. The display device according to claim 1, further comprising: A transistor, located in the display area and connected to the plurality of light-emitting diodes; A planarization layer covers the transistor; as well as The anodes of the plurality of light-emitting diodes are on the planarization layer. Wherein, at least one of the plurality of structures and the planarization layer are made of the same material, and The connecting layer and the anode are made of the same material.

6. The display device according to claim 1, further comprising: The second substrate covers the first substrate; as well as A sealing member joins the first substrate and the second substrate. The first electrode and the second electrode protrude from the region overlapping with the second substrate to the outside of the second substrate and the sealing member.

7. The display device according to claim 6, wherein, The connecting layer is disposed inside the sealing member.

8. The display device according to claim 1, wherein, Whether moisture penetration has occurred is detected by measuring the resistance change of the connecting layer using the first and second electrodes.

9. The display device according to claim 1, further comprising a packaging unit, wherein the first electrode, the second electrode, the connection layer and the plurality of light-emitting diodes are packaged between the packaging unit and the first substrate.

10. The display device according to claim 9, wherein, The encapsulation unit has a structure in which inorganic and organic layers are stacked alternately.

11. The display device according to claim 3, wherein, The first electrode, the second electrode, and the protective layer are formed from the same material using the same process.

12. The display device according to claim 4, wherein, The plurality of structures and the embankment are formed from the same material using the same process.

13. The display device according to claim 4, wherein, The connecting layer and the cathode are formed from the same material using the same process.

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