State detection method of ISFET array sensor chip and related device

Abstract

The application discloses a state detection method of an ISFET array sensor chip, and comprises the following steps: taking the applied voltage of an array element selected randomly from the chip as a normal working voltage; selecting a plurality of to-be-detected array elements from the chip based on a preset rule; and performing state detection on the plurality of array elements based on the normal working voltage to obtain a detection result. The applied voltage of the array element selected randomly is taken as the normal working voltage for state detection, thereby avoiding the problem of inaccurate selection of a reference voltage, and then a plurality of to-be-detected array elements are selected from the chip based on the preset rule; and state detection is performed on the plurality of array elements based on the normal working voltage to obtain a detection result, instead of sequentially detecting the array elements, thereby avoiding the problem of signal loss in initial detection and improving the accuracy of chip state detection. The application further discloses a state detection device of an ISFET array sensor chip, a detection equipment and a computer readable storage medium.

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