Optical interconnect device and method of manufacturing the same

Abstract

The application relates to the chip technical field and provides an optical interconnection device and a manufacturing method thereof. The optical interconnection device comprises a plurality of electric chips, a first electric chip and a second electric chip, and a first optical interconnection element with a plurality of optical waveguides; the first electric chip and the second electric chip are connected in communication through the optical waveguides of the first optical interconnection element. According to the embodiment of the application, the plurality of electric chips can realize, for example, a hybrid cubic network communication interconnection topology or other complex interconnection topologies through optical interconnection, and meanwhile, the information is processed in parallel, the electric chips have close information interconnection, and the requirements of an artificial intelligence algorithm on computing capacity and bandwidth can be better met. Compared with electric interconnection, optical interconnection has the advantages of large bandwidth, low time delay, small power consumption, high integration and strong anti-electromagnetic interference capability.

Description

Technical Field

[0001] This invention relates to the field of chip technology, and more specifically, to an optical interconnect device and its manufacturing method. Background Technology

[0002] Very large-scale integrated circuit (VLSI) technology has become a pillar supporting the development and evolution of the information society. Various chips widely used in information systems typically rely on upgrades in electrical chip manufacturing processes to improve performance and optimize power consumption. However, as chip manufacturing processes gradually approach their physical limits, the pace of Moore's Law is slowing, requiring new approaches for further development. Traditional information interconnection primarily relies on electronic conduction through copper dielectrics. However, the speed and distance of electronic information transmission are limited by the time constants of resistors and capacitors, as well as electrical losses. This leads to a significant increase in the diameter of the required copper wires as transmission speed and distance increase. Furthermore, signal crosstalk between electronic information channels restricts the energy consumption and bandwidth density of interconnection. On the other hand, high-speed interconnection is often required between chips. For example, with the development of artificial intelligence, deep learning algorithms often require high-speed communication between computing and storage units to handle large amounts of data. This makes the power consumption and bandwidth density of traditional electrical interconnection even more critical issues, thus limiting the development of higher-performance artificial intelligence chips. Summary of the Invention

[0003] This invention provides an optical interconnect device and its manufacturing method, which uses optical interconnects as the interconnect medium between chips, thus avoiding various defects caused by electrical interconnects.

[0004] According to one aspect of the present invention, an optical interconnect device is provided, the optical interconnect device comprising: a plurality of electrical chips, including a first electrical chip and a second electrical chip; a first optical interconnect having a plurality of optical waveguides; wherein the first electrical chip and the second electrical chip are communicatively connected through the optical waveguides of the first optical interconnect.

[0005] In some embodiments, the optical interconnect device further includes: an electro-optical conversion unit connected to the first electrical chip, used to carry information carried by the electrical signal of the first electrical chip into an optical signal, the optical signal being transmitted in the optical waveguide of the first optical interconnect; and a photoelectric conversion unit connected to the second electrical chip, used to convert the received optical signal into an electrical signal transmitted to the second electrical chip; wherein the transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes: the optical waveguide in the first optical interconnect.

[0006] In some embodiments, the first optical interconnect is disposed on the carrier substrate; the plurality of electrical chips are disposed on the first optical interconnect; wherein the first optical interconnect includes a photonic integrated circuit, the photonic integrated circuit including the plurality of optical waveguides, the electro-optical conversion unit, and the photoelectric conversion unit.

[0007] In some embodiments, the optical interconnect device further includes: a plurality of optical fibers; and a second optical interconnect having a plurality of optical waveguides, the second optical interconnect being interconnected with the first optical interconnect via the plurality of optical fibers; wherein the transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes: a transmission path passing sequentially through the optical waveguide in the first optical interconnect, at least one of the plurality of optical fibers, and the optical waveguide of the second optical interconnect.

[0008] In some embodiments, the first optical interconnect and the second optical interconnect are disposed on the carrier substrate; the first electrical chip is disposed on the first optical interconnect, the first optical interconnect including a photonic integrated circuit, the photonic integrated circuit including the plurality of optical waveguides and the electro-optical conversion unit; the second electrical chip is disposed on the second optical interconnect, the second optical interconnect including a photonic integrated circuit, the photonic integrated circuit of the second optical interconnect including the photoelectric conversion unit.

[0009] In some embodiments, the photonic integrated circuit of the first optical interconnect further includes a dielectric layer, a first conductive wiring unit, and a second conductive wiring unit; a plurality of optical waveguides, the electro-optic conversion unit, and the photoelectric conversion unit in the photonic integrated circuit are covered by the dielectric layer; the first conductive wiring unit is configured to electrically connect the electro-optic conversion unit to the first electrical chip; the second conductive wiring unit is configured to electrically connect the photoelectric conversion unit to the second electrical chip; the first conductive wiring unit includes a first electrical connection structure that passes through at least a portion of the dielectric layer; the second conductive wiring unit includes a second electrical connection structure that passes through at least a portion of the dielectric layer.

[0010] In some embodiments, the electro-optical conversion unit includes a modulator array that modulates the information carried by the electrical signal of the first electrical chip onto optical signals of different wavelengths and transmits them in a wavelength division multiplexing manner; the photoelectric conversion unit includes a detector array that performs wavelength division multiplexing on the received optical signal and converts it into an electrical signal to be transmitted to the second electrical chip.

[0011] In some embodiments, the modulator array includes a plurality of micro-ring modulators; and / or the detector array includes a plurality of micro-ring filter detectors.

[0012] In some implementations, the plurality of electrical chips includes one or more small chips.

[0013] In some implementations, the first electrical chip and the second electrical chip are installed during the wafer-level packaging process.

[0014] According to one aspect of the present invention, an optical interconnect device is provided, the optical interconnect device comprising: a first electrical chip, a second electrical chip; a first optical interconnect; the first electrical chip and the second electrical chip being disposed on the first optical interconnect; the first optical interconnect comprising a photonic integrated circuit, the photonic integrated circuit comprising: a plurality of optical waveguides; a first electro-optical conversion unit connected to the first electrical chip for carrying information carried by an electrical signal of the first electrical chip into a first optical signal; a first photoelectric conversion unit connected to the second electrical chip for converting the first optical signal into an electrical signal transmitted to the second electrical chip; a second electro-optical conversion unit connected to the second electrical chip for carrying information carried by an electrical signal of the second electrical chip into a second optical signal; and a second photoelectric conversion unit connected to the first electrical chip for converting the second optical signal into an electrical signal transmitted to the first electrical chip; wherein the transmission path of the first optical signal from the first electro-optical conversion unit to the first photoelectric conversion unit includes at least one of the plurality of optical waveguides in the first optical interconnect; wherein the transmission path of the second optical signal from the second electro-optical conversion unit to the second photoelectric conversion unit includes at least one of the plurality of optical waveguides in the first optical interconnect.

[0015] In some embodiments, the optical interconnect device further includes a second optical interconnect, a third electrical chip, and a plurality of optical fibers, wherein the third electrical chip is disposed on the second optical interconnect, and the plurality of optical fibers optically connect the first optical interconnect and the second optical interconnect; the photonic integrated circuit of the first optical interconnect further includes a third electro-optical conversion unit connected to the first electrical chip, used to carry the information carried by the electrical signal of the first electrical chip to a third optical signal; the second optical interconnect includes a photonic integrated circuit, the photonic integrated circuit of the second optical interconnect includes a plurality of optical waveguides, and a third photoelectric conversion unit connected to the third electrical chip, used to convert the third optical signal into an electrical signal transmitted to the third electrical chip; wherein the transmission path of the third optical signal from the third electro-optical conversion unit to the third photoelectric conversion unit includes: the optical waveguide in the first optical interconnect, at least one optical fiber among the plurality of optical fibers, and the optical waveguide in the second optical interconnect.

[0016] In some embodiments, the photonic integrated circuit of the first optical interconnect further includes: a dielectric layer and a plurality of conductive wiring units; the dielectric layer covers the plurality of optical waveguides, the first electro-optical conversion unit, the first photoelectric conversion unit, the second electro-optical conversion unit, and the second photoelectric conversion unit in the photonic integrated circuit of the first optical interconnect; the plurality of conductive wiring units are configured to electrically connect the first electro-optical conversion unit, the first photoelectric conversion unit, the second electro-optical conversion unit, and the second photoelectric conversion unit to a corresponding electrical chip; the plurality of conductive wiring units include a plurality of electrical connection structures, each of the plurality of electrical connection structures passing through at least a portion of the dielectric layer.

[0017] In some embodiments, the first electro-optical conversion unit and the second electro-optical conversion unit each include one or more optical modulators, and the first photoelectric conversion unit and the second photoelectric conversion unit each include one or more photodetectors.

[0018] In some embodiments, the optical modulator includes a microring modulator; and / or the photodetector includes a microring filter detector.

[0019] In some implementations, the first electrical chip, the second electrical chip, and the third electrical chip include a small chip.

[0020] According to one aspect of the present invention, an optical interconnect device is provided, comprising: a first optical interconnect including a first photonic integrated circuit, the first photonic integrated circuit including a first plurality of electro-optic conversion units, a first plurality of optical waveguides, and a first plurality of photoelectric conversion units; a second optical interconnect including a second photonic integrated circuit, the second photonic integrated circuit including a second plurality of electro-optic conversion units, a second plurality of optical waveguides, and a second plurality of photoelectric conversion units; a first plurality of electrical chips disposed on the first optical interconnect; a second plurality of electrical chips disposed on the second optical interconnect; the first plurality of electro-optic conversion units being configured such that each of the first plurality of electrical chips corresponds to at least one electro-optic conversion unit; the first plurality of photoelectric conversion units being configured such that each of the first plurality of electrical chips corresponds to at least one photoelectric conversion unit; the first plurality of optical waveguides being configured such that for any two electrical chips among the first plurality of electrical chips, an electro-optic conversion unit corresponding to one of the electrical chips is optically connected to a photoelectric conversion unit corresponding to the other electrical chip, so that any two electrical chips among the first plurality of electrical chips can communicate.

[0021] In some embodiments, the first optical interconnect is optically connected to the second optical interconnect; at least one of the first plurality of electrical chips communicates with at least one of the second plurality of electrical chips through the first optical interconnect and the second optical interconnect.

[0022] In some embodiments, the first optical interconnect and the second optical interconnect are optically connected via multiple optical fibers or multiple optical waveguides, so that at least one of the first plurality of electrical chips can communicate with at least one of the second plurality of electrical chips.

[0023] In some embodiments, the first photonic integrated circuit further includes: a dielectric layer and a plurality of conductive wiring units; the dielectric layer covers the plurality of optical waveguides, the plurality of electro-optic conversion units, and the plurality of photoelectric conversion units in the first photonic integrated circuit; each of the plurality of conductive wiring units is electrically connected to each of the plurality of electro-optic conversion units, or electrically connected to each of the plurality of photoelectric conversion units; the plurality of conductive wiring units includes a plurality of electrical connection structures, each of the plurality of electrical connection structures passing through at least a portion of the dielectric layer; and the plurality of conductive wiring units are electrically connected to the plurality of electrical chips to electrically connect each of the plurality of electro-optic conversion units to a corresponding electrical chip, or electrically connect each of the plurality of photoelectric conversion units to a corresponding electrical chip.

[0024] According to one aspect of the present invention, a method for manufacturing an optical interconnect device is provided, characterized in that it includes: providing a wafer; forming a plurality of photonic integrated circuits on the wafer; wherein each of the plurality of photonic integrated circuits may include a plurality of optical waveguides, as well as an electro-optical conversion unit and a photoelectric conversion unit; mounting at least one desired electrical chip on each of the plurality of photonic integrated circuits; and dividing the wafer to obtain a plurality of independent optical interconnect devices.

[0025] Optical interconnects connect electrical chips, loading information from different chips onto light waves. The light then travels at high speed through the optical interconnects, completing the interconnection between the different chips. Compared to electrical interconnects, optical interconnects offer higher bandwidth, lower latency, lower power consumption, higher integration density, and stronger resistance to electromagnetic interference. Furthermore, information transmission via optical interconnects, whether on-chip or between chips, is distance-insensitive, allowing more data to be transmitted over longer distances, thus providing greater flexibility in computing device architecture design. Therefore, connecting electrical chips with optical interconnects not only maintains the advantages of high yield, low cost, and rapid product iteration cycles of electrical chips, but also solves the power consumption and bandwidth density bottlenecks of interconnecting small chips. Applications to artificial intelligence chips can achieve higher system energy efficiency ratios.

[0026] Compared to transmitting electrical signals via wires, transmitting optical signals via optical waveguides reduces energy loss, delay, and crosstalk, thus improving the interconnect performance between chips. This invention particularly provides a solution for chiplet interconnection. Replacing a single, multifunctional large chip with multiple chiplets overcomes the physical bottleneck of chip area, representing a crucial pathway to achieving higher-performance chips. Because the area of ​​each die is reduced, the number of dies that can be placed on a single wafer increases, thereby improving yield and reducing costs. Furthermore, chiplet technology allows for flexible upgrades of only specific modules when improving system performance, accelerating the system upgrade iteration cycle. Additionally, the aforementioned optical interconnects include photonic integrated circuits, which are highly integrated and directly applicable to interconnections between chips with electrical signal input / output, thus facilitating miniaturization and integration of chip packaging.

[0027] Furthermore, multiple optical interconnects can be optically interconnected, enabling the electrical chips mounted on different optical interconnects to achieve optical connections, thus ensuring that optical interconnects are not limited to the same optical interconnect.

[0028] Furthermore, the modulator array employs a high-efficiency, small-area micro-ring modulator array, and the detector array uses a micro-ring filter detector with wave decomposition and multiplexing capabilities. This allows for large-scale information transmission between electrical chips without being limited by power consumption and bandwidth density. By arranging the modulator and detector arrays at the locations of the optical interconnects, a hybrid cube network communication interconnect topology or other complex interconnect topologies can be realized using multiple identical electrical chips and multiple identical optical interconnects. This allows multiple electrical chips to process information in parallel simultaneously, and the electrical chips have tight information interconnections, better meeting the computational power and bandwidth requirements of artificial intelligence algorithms. Compared to existing artificial intelligence products, the optical interconnect device of this invention can integrate more computing units (chips) and storage units (chips), and the use of optical interconnects ensures organic information interconnection between them, thereby providing a higher system energy efficiency ratio.

[0029] Various aspects, features, advantages, etc., of the embodiments of the present invention will be specifically described below in conjunction with the accompanying drawings. These aspects, features, advantages, etc., will become clearer from the following detailed description in conjunction with the accompanying drawings. Attached Figure Description

[0030] Figure 1 This is a schematic diagram illustrating the structure of an optical interconnect device according to an exemplary embodiment of the present invention.

[0031] Figure 2 It is shown Figure 1 The diagram shows a schematic of the optical interconnect device.

[0032] Figure 3 It shows Figure 2 The diagram shows the connection topology of the electrical chips in the optical interconnect device.

[0033] Figure 4 This is a schematic diagram illustrating the structure of a modulator array in an electro-optical conversion unit, which is an exemplary embodiment of the present invention.

[0034] Figure 5 This is a schematic diagram illustrating the structure of a detector array in a photoelectric conversion unit, which is an exemplary embodiment of the present invention.

[0035] Figure 6 This is a cross-sectional schematic diagram of the relevant structures during the fabrication of a photonic integrated circuit according to an embodiment of this application.

[0036] Figure 7 This is a cross-sectional schematic diagram of the relevant structures during the fabrication of a photonic integrated circuit according to an embodiment of this application.

[0037] Figure 8 This is a cross-sectional schematic diagram of the relevant structures during the fabrication of a photonic integrated circuit according to an embodiment of this application. Detailed Implementation

[0038] To facilitate understanding of the various aspects, features, and advantages of the technical solution of this invention, the invention will be described in detail below with reference to the accompanying drawings. It should be understood that the various embodiments described below are for illustrative purposes only and are not intended to limit the scope of protection of this invention.

[0039] The term "including" as used herein is an open-ended term and should therefore be interpreted as "including but not limited to". "Approximately" means that, within an acceptable range of error, those skilled in the art can solve the technical problem and substantially achieve the technical effect within a certain margin of error.

[0040] Furthermore, the term "connection" here includes any means of connection, both direct and indirect. Therefore, if the text describes a first device connected to a second device, it means that the first device can be directly connected to the second device, or indirectly connected to the second device through other devices.

[0041] The terms "first," "second," etc., used herein are for distinguishing different devices, modules, structures, etc., and do not represent a chronological order, nor do they limit "first" and "second" to different types. Furthermore, some processes described in the specification, claims, and accompanying drawings of this application include multiple operations appearing in a specific order. These operations may be performed out of order or in parallel. Operation numbers such as 101, 102, etc., are merely for distinguishing different operations and do not themselves represent any execution order. Additionally, these processes may include more or fewer operations, and these operations may be performed sequentially or in parallel.

[0042] In one embodiment of the present invention, the optical interconnect device includes a plurality of electrical chips and an optical interconnect, wherein any two electrical chips interact, i.e., communicate, through the optical interconnect. The optical interconnect has multiple optical waveguides; for example, the optical interconnect can be implemented using optical chips. The plurality of electrical chips includes any first and second electrical chips. The optical interconnect device further includes an electro-optical conversion unit and a photoelectric conversion unit. The electro-optical conversion unit is connected to the first electrical chip and is used to carry information from the electrical signal of the first electrical chip into an optical signal, which is transmitted in the optical waveguide of the first optical interconnect. The photoelectric conversion unit is connected to the second electrical chip and converts the received optical signal into an electrical signal transmitted to the second electrical chip. Furthermore, the transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes the optical waveguide in the first optical interconnect. In some embodiments, the optical interconnect includes the electro-optical conversion unit and the photoelectric conversion unit. The electro-optical conversion unit includes a modulator that modulates the information carried by the electrical signal of the first electrical chip into an optical signal. The optical signal is transmitted to the photoelectric conversion unit via an optical waveguide in the optical interconnect. The photoelectric conversion unit converts the optical signal into an electrical signal, which is then transmitted to the second electrical chip. In other words, the transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes the optical waveguide in the optical interconnect.

[0043] In another embodiment of the present invention, the optical interconnect device includes a plurality of electrical chips and a plurality of optical interconnects. Different optical interconnects are interconnected via optical fibers. Each optical interconnect has an optical coupling structure (e.g., a grating coupler or an end-face coupler) connected to the optical fiber. Any two electrical chips located or adjacent to the same optical interconnect are connected for signal transmission, i.e., communication, through the optical interconnect, as described above and will not be repeated here. Any two electrical chips located or adjacent to different optical interconnects are connected for signal transmission through corresponding optical interconnects and optical fibers. Specifically, the plurality of optical interconnects includes a first optical interconnect and a second optical interconnect, each having a plurality of optical waveguides. The plurality of electrical chips includes any first electrical chip located or adjacent to the first optical interconnect and any second electrical chip located or adjacent to the second optical interconnect. The first optical interconnect includes an electro-optical conversion unit connected to the first electrical chip, and the second optical interconnect includes a photoelectric conversion unit connected to the second electrical chip. The electro-optical conversion unit carries the information from the electrical signal of the first electrical chip into an optical signal. The optical signal is transmitted via an optical waveguide in the first optical interconnect to the optical fiber, then via the optical fiber to the second optical interconnect, and finally via the optical waveguide of the second optical interconnect to the photoelectric conversion unit. The photoelectric conversion unit converts the optical signal into an electrical signal, which is then transmitted to the second electrical chip. In other words, the transmission path of the optical signal from the electro-optical conversion unit to the photoelectric conversion unit includes a transmission path that sequentially passes through the optical waveguide in the first optical interconnect, the optical fiber, and the optical waveguide of the second optical interconnect.

[0044] Although the above embodiments have been described with optical signal transmission from the first electrical chip to the second electrical chip, it should be understood that optical signal transmission from the second electrical chip to the first electrical chip can also be performed in the same manner. That is, for each electrical chip, an electro-optical conversion unit and a photoelectric conversion unit for signal transmission with another electrical chip are provided in the corresponding optical interconnect.

[0045] It should be noted that the present invention does not impose a particular limitation on the number of electrical chips and optical interconnects. In some embodiments, two or more electrical chips communicate with each other through one optical interconnect. In other embodiments, two or more electrical chips communicate with each other through two or more optical interconnects.

[0046] Figure 1 This is a schematic diagram illustrating the structure of an optical interconnect device according to an exemplary embodiment of the present invention. In one exemplary embodiment of the present invention, the optical interconnect device includes a carrier substrate 100, optical interconnects 201 and 202, and a plurality of electrical chips, the plurality of electrical chips including electrical chip A, electrical chip B, electrical chip C, electrical chip D, electrical chip E, electrical chip F, electrical chip G, and electrical chip H.

[0047] Two optical interconnects, namely optical interconnect 201 and optical interconnect 202, are disposed side by side on the carrier substrate 100. In some embodiments, the optical interconnects include photonic integrated circuits.

[0048] Four electrical chips, namely electrical chip A, electrical chip B, electrical chip C, and electrical chip D, are integrated on the optical interconnect 201. Four electrical chips, namely electrical chip E, electrical chip F, electrical chip G, and electrical chip H, are integrated on the optical interconnect 202. Any one of the four electrical chips on the same optical interconnect is optically interconnected with the other three electrical chips through the same optical interconnect, and simultaneously optically interconnected with an electrical chip on another optical interconnect. Figure 2 An exemplary diagram illustrates the optical interconnect structure of the optical interconnect device and the position of the corresponding electrical chip.

[0049] In specific embodiments, the optical interconnect includes a photonic integrated circuit, which comprises multiple optical waveguides, electro-optical conversion units, and photoelectric conversion units. In some embodiments, the electro-optical conversion unit includes one or more optical modulators, and the multiple modulators can form a modulator array. The photoelectric conversion unit includes one or more photodetectors, and the multiple detectors can form a detector array. For example, the modulator can modulate initial light based on an electrical signal to generate an optical signal carrying information; that is, the information carried by the electrical signal is carried in the optical signal.

[0050] In this exemplary embodiment, the photonic integrated circuits of optical interconnects 201 and 202 are provided with multiple electro-optical conversion units and multiple photoelectric conversion units. Each electro-optical conversion unit includes a modulator array, and each photoelectric conversion unit includes a detector array, such as... Figure 2 As shown. In an exemplary embodiment, the photonic integrated circuit of the optical interconnect may further include a plurality of conductive wiring units ( Figure 2 (Not shown), each modulator array and detector array can be electrically connected to the electrical chip through their corresponding conductive wiring units, thereby obtaining electrical signals carrying information from the electrical chip, or sending electrical signals carrying information to the electrical chip.

[0051] In some implementations, such as Figure 2 As shown, for any given electrical chip, it is connected to four modulator arrays (four electro-optic conversion units) and four detector arrays (four photoelectric conversion units) in the optical interconnect. The electrical chip is disposed in the corresponding area on the optical interconnect. Figure 2 The part pointed to by chips A to H in the CEC is... Figure 1(Corresponding electrical chips A to H). Taking electrical chip A as an example, the optical interconnect integrates modulator arrays M1, M2, M3, and M4, and also integrates detector arrays D1, D2, D3, and D4. Modulator array M1 communicates optically with the detector array corresponding to electrical chip F in optical interconnect 202 via the optical waveguide in optical interconnect 201, the optical fiber in the coupling fiber array, and the optical waveguide in optical interconnect 202. Detector array D1 communicates optically with the modulator array corresponding to electrical chip F on another optical interconnect 202 via the optical waveguide in optical interconnect 201, the optical fiber in the coupling fiber array, and the optical waveguide in optical interconnect 202. Modulator array M2 communicates optically with the detector array corresponding to electrical chip B on the same optical interconnect 201 via the optical waveguide in optical interconnect 201. Detector array D2 communicates optically with the detector array corresponding to electrical chip B on the same optical interconnect 201 via the optical waveguide in optical interconnect 201. The modulator array corresponding to the electrical chip B on the connector 201 performs optical communication; the modulator array M3 performs optical communication with the detector array corresponding to the electrical chip C on the optical interconnect 201 through the optical waveguide in the optical interconnect 201; the detector array D3 performs optical communication with the modulator array corresponding to the electrical chip C on the optical interconnect 201 through the optical waveguide in the optical interconnect 201; the modulator array M4 performs optical communication with the detector array corresponding to the electrical chip D on the optical interconnect 201 through the optical waveguide in the optical interconnect 201; and the detector array D4 performs optical communication with the modulator array corresponding to the electrical chip D on the optical interconnect 201 through the optical waveguide in the optical interconnect 201.

[0052] The optical interconnects 201 and 202 may further include optical coupling structures such as grating couplers or end-face couplers for coupling multiple wavelengths of laser light output from the laser module to the optical interconnects, and distributing the laser energy evenly to the modulator array input ports below different electronic chips via a series of beam splitters. The beam splitters can be, for example, wideband beam splitters. Taking electronic chip A as an example, multiple wavelengths of laser light output from the laser module are coupled to the optical interconnect 201 via the optical coupling structure 300, and the laser energy is evenly distributed in the optical interconnect 201 to the optical waveguides connected to the optical modulator arrays M1, M2, M3, and M4 respectively via a series of beam splitters 400, thereby inputting the distributed optical signals to the corresponding modulator arrays through the corresponding optical waveguides. In some embodiments, a laser module and related optical components can be configured to couple the light emitted by the laser module to the optical waveguides in the optical interconnects. Optionally, the optical interconnects 201 and 202 can also be optically connected via multiple optical waveguides.

[0053] Information from the corresponding electronic chips is modulated into optical signals of different wavelengths by various modulator arrays and transmitted using wavelength division multiplexing (WDM). The modulated optical signals are then transmitted to detector arrays below other electronic chips via optical waveguides in optical interconnects or optical fibers in coupled fiber arrays. The detector arrays demultiplex the modulated signals and convert them into electrical signals, thus completing the information transmission between different electronic chips. Taking electronic chip A as an example, modulator array M1 loads the information processed and output by electronic chip A into an optical signal. This optical signal is transmitted sequentially through the optical waveguide in optical interconnect 201, the optical fiber in the coupled fiber array, and the optical waveguide in optical interconnect 202, reaching a detector array below electronic chip F. The detector array demultiplexes the received optical signal and converts it into an electrical signal, which is then input to electronic chip F for processing. Modulator array M2 loads the information output from electrical chip A into an optical signal. This optical signal is transmitted through the optical waveguide in optical interconnect 201 to a detector array below electrical chip B. The detector array performs wave demultiplexing on the received optical signal and converts it into an electrical signal, which is then input into electrical chip B for processing. Modulator arrays M3 and M4 perform similar processing as modulator array M2. Furthermore, detector arrays D1, D2, D4, and D5 also perform wave demultiplexing on the optical signal sent to electrical chip A, converting it into an electrical signal, and inputting this electrical signal into electrical chip A for processing.

[0054] In an exemplary embodiment, the four electrical chips on each optical interconnect are interconnected via optical signals to form nearest-neighbor and second-nearest-neighbor connections, and then optically interconnected with another four electrical chips via a coupled fiber optic array, ultimately forming a hybrid cube network topology communication interconnection structure, such as... Figure 3 As shown, this hybrid cube network topology reuses two optical interconnects and eight electrical chips, improving the system's energy efficiency ratio. In some embodiments, the electrical chips can be miniaturized, thereby reducing chip design and fabrication costs and effectively improving chip yield.

[0055] Figure 4 An electro-optical conversion unit is illustrated as an example, which includes a modulator array, and in some embodiments, the modulator array includes a plurality of micro-ring modulators. For example... Figure 4As shown, the modulator array consists of a series of micro-ring modulators 401. These micro-ring modulators 401, based on the carrier depletion effect, can support high modulation rates. This type of waveguide structure involves doping different regions of the ridge waveguide to form lateral or longitudinal PN junction structures (including lateral or longitudinal PN junctions) 402. The PN junctions operate in reverse bias mode. When a reverse bias voltage is applied, the depletion region within the PN junction increases, and the built-in electric field is enhanced. Since there are no free carriers in the depletion region, the refractive index of the corresponding ring waveguide 403 changes, causing a shift in its resonant wavelength. The intensity of a specific wavelength near the resonance peak changes significantly, thus achieving intensity modulation. The micro-ring modulators are small in size, have low power consumption, and high modulation efficiency. When modulating electrical information data from the chip, the carrier wavelength can be corresponding to a specific wavelength by adjusting the heating electrode 404 on the micro-ring modulator. The modulated optical signals of different wavelengths propagate independently on the optical waveguide 407, realizing multi-channel wavelength division multiplexing signal transmission. Multiple micro-rings can correspond to multiple different wavelengths. The photodetector 405 is used to monitor whether the device performance is normal. For example, if the optical interconnect fails, it can be analyzed using these photodetectors 405. The waveguide terminator 406 can be a virtual photodetector that is not coupled to an external electrical chip. It can absorb residual light energy at the end of the waveguide so as not to affect the transmission of optical signals to other optical waveguides. It should be noted that the term "modulator array" only indicates an arrangement in a certain position. Based on meeting functional requirements, the term "array" does not specifically limit the arrangement form or arrangement pattern of the modulators, nor is it limited to a two-dimensional array.

[0056] Figure 5 An exemplary photoelectric conversion unit is shown, which includes a detector array, in some embodiments, such as Figure 5 As shown, the detector array includes multiple micro-ring filter detectors 501, each comprising a heating electrode 502, a ring waveguide 503, and a signal photodetector 504. By adjusting the heating electrode 502 on the micro-ring filter detector 501, the ring waveguide 503 is adjusted, filtering out optical signals of a specific wavelength from the optical waveguide 507 and transmitting them to the signal photodetector 504 coupled to the electrical chip, thus achieving the conversion from optical signal to electrical signal. Multiple micro-rings can correspond to multiple different wavelengths. Furthermore, the waveguide terminal 505, connected to the optical waveguide 507 and the signal photodetector 504, absorbs residual optical energy at the waveguide end, ensuring it does not affect the signal transmission of other optical waveguides. It should be noted that the term "detector array" only indicates an arrangement in a certain position; while meeting functional requirements, the term "array" does not specifically limit the arrangement form or pattern of the detectors, nor is it limited to a two-dimensional array.

[0057] In some embodiments, the electrical chip of the optical interconnect device may be selected from CPU, GPU, memory chip, etc., and may include digital circuits or analog circuits.

[0058] An exemplary embodiment of the present invention provides a method for manufacturing an optical interconnect device, which can be used to manufacture the optical interconnect devices described in the foregoing embodiments. The method includes:

[0059] S601 provides wafers.

[0060] S602, Multiple photonic integrated circuits are formed on the wafer.

[0061] Each of the plurality of photonic integrated circuits may include multiple optical waveguides, as well as electro-optical conversion units and photoelectric conversion units. The multiple optical waveguides can be used to form an optical waveguide unit, that is, an optical waveguide unit includes multiple optical waveguides. Each of the plurality of photonic integrated circuits may also include multiple conductive wiring units, which can connect the electro-optical conversion units and / or photoelectric conversion units to a corresponding electrical chip to receive electrical signals to be communicated from the electrical chip and / or send electrical signals for communication to the electrical chip. Typically, the plurality of photonic integrated circuits are formed in multiple regions on a wafer. In subsequent steps, the wafer is diced to form individual photonic integrated circuits, which are used to form optical interconnects, that is, optical interconnects include the photonic integrated circuits.

[0062] S603. At least one electrical chip is installed on each of the plurality of photonic integrated circuits. For example, a first electrical chip and a second electrical chip are provided, such that the first electrical chip is electrically connected to the first conductive wiring unit, and the second electrical chip is electrically connected to the second conductive wiring unit. A first electro-optical conversion unit receives a first electrical signal from the first electrical chip through the first conductive wiring unit and encodes it to generate a first optical signal. The first photoelectric converter is used to convert the first optical signal into an electrical signal and transmit it to the second conductive wiring unit.

[0063] S604. The wafer is divided to obtain multiple independent optical interconnect devices.

[0064] In some embodiments, a single optical interconnect device includes a single photonic integrated circuit and a first electrical chip and a second electrical chip mounted (decorated) on the photonic integrated circuit. The first electrical chip and the second electrical chip are capable of communicating via a first conductive wiring unit, a first electro-optical conversion unit, at least one of a plurality of optical waveguides, a first photoelectric conversion unit, and the second conductive wiring unit. A single, independent optical interconnect device specifically includes one of these photonic integrated circuits.

[0065] In S601 above, the wafer includes a semiconductor layer. In one example, the wafer may be a semiconductor-on-insulator (SIA) wafer, such as an SOI (Silicon-On-Insulator) wafer. Figure 6 As shown, a semiconductor-on-insulator wafer may include: an insulating layer 602, a semiconductor layer 603 formed on the insulating layer 602, and a backing substrate layer 601 located below the insulating layer 602.

[0066] In the above S602, a photonic integrated circuit can be formed by performing processes such as patterning, deposition, and doping on the semiconductor layer 603.

[0067] In one example of S603 described above, the first electrical chip can be electrically connected to the first conductive wiring unit by means of electrical connection such as bonding or soldering, and the second electrical chip can be electrically connected to the second conductive wiring unit.

[0068] In a specific example, step S602 above, "forming multiple photonic integrated circuits on the wafer," can be implemented using the following steps:

[0069] S21. An optical waveguide unit, a first electro-optical conversion unit, and a first photoelectric conversion unit are formed on the wafer.

[0070] S22. A dielectric layer is deposited on the wafer on which the optical waveguide unit, the first electro-optic conversion unit, and the first photoelectric conversion unit are formed, to cover the optical waveguide unit, the first electro-optic conversion unit, the first photoelectric conversion unit, and the wafer.

[0071] S23. A first opening and a second opening are formed in the dielectric layer.

[0072] S24. A first electrical connection structure is formed in the first opening and a second electrical connection structure is formed in the second opening.

[0073] The first conductive wiring unit includes the first electrical connection structure; the second conductive wiring unit includes the second electrical connection structure.

[0074] The above S21, such as Figure 6 and Figure 7As shown, the semiconductor layer 603 of the wafer can be patterned to obtain corresponding regions for the optical waveguide unit 103, the first electro-optic conversion unit 104, and the first photoelectric conversion unit 105. Specifically, photolithography and etching techniques are used to remove unwanted material for patterning. In some embodiments, the aforementioned insulating layer can serve as an etching stop layer. In some embodiments, the electro-optic conversion unit includes one or more modulators, and multiple modulators can form a modulator array. The photoelectric conversion unit includes one or more photodetectors, and multiple detectors can form a detector array. For simplification, Figure 7 Only one modulator and one detector are shown in the image.

[0075] In S22 above, such as Figure 8 As shown, a dielectric layer 106 is deposited on a wafer on which the optical waveguide unit 103, the first electro-optic conversion unit 104, and the first photoelectric conversion unit 105 are formed, to cover the optical waveguide unit 103, the first electro-optic conversion unit 104, the first photoelectric conversion unit 105, and the wafer. Specifically, the dielectric layer 106 is formed on the optical waveguide unit 103, the first electro-optic conversion unit 104, the first photoelectric conversion unit 105, and the insulating layer 602 by deposition. The material of the dielectric layer can be the same as the material of the insulating layer.

[0076] In S23 above, such as Figure 8 As shown, a first opening and a second opening are formed in the dielectric layer 106. The first and second openings can be formed using etching techniques, and the number of first and second openings can be one or more depending on the connection requirements.

[0077] In some embodiments, the dielectric layer 106 is a multilayer structure formed by multiple sub-dielectric layers. Multiple conductive layers may be formed within the dielectric layer, and the conductive layers are connected by conductive material in vias. For example, a first sub-dielectric layer is deposited first, followed by a first conductive layer, then a second sub-dielectric layer, then a second conductive layer, then a third sub-dielectric layer, then a third conductive layer, and finally a fourth sub-dielectric layer. In the first to third conductive layers, different conductive layers are interconnected through conductive material in vias, and each conductive layer can be a patterned metal material layer.

[0078] In S24 above, such as Figure 8 As shown, a first electrical connection structure 101a of a first conductive wiring unit 101 and a second electrical connection structure 102a of a second conductive wiring unit 102 can be formed in the first opening by depositing a conductive material. The first electrical connection structure passes through at least a portion of the dielectric layer 106.

[0079] After depositing conductive material, excess conductive material can be removed along the mounting surface of the dielectric layer by a planarization process such as chemical mechanical polishing or mechanical grinding, thereby making the first electrical connection structure and the second electrical connection structure flush with the mounting surface of the dielectric layer.

[0080] Subsequently, a first electrical chip and a second electrical chip are mounted on each photonic integrated circuit on the wafer. Specifically, the first electrical chip and the second electrical chip are mounted in the region corresponding to each photonic integrated circuit on the mounting surface of the dielectric layer 106 / photonic integrated circuit. That is, in the region corresponding to each photonic integrated circuit on the mounting surface of the dielectric layer 106 / photonic integrated circuit, the first electrical chip and the second electrical chip are electrically connected to the first electrical connection structure and the second electrical connection structure in that region.

[0081] Subsequently, a sealant can be formed on the dielectric layer 106 to bury or cover the first and second electrical chips. The sealant can then be cured and planarized.

[0082] In some implementations, a process of thinning the backing substrate 601 may be included.

[0083] In some embodiments, S604 can be executed after S603, that is, the first electrical chip and the second electrical chip are assembled in batches before the photonic integrated circuit wafer is diced. This method can batch package the first electrical chip and the second electrical chip in the wafer-level process. At this time, only the photonic integrated circuit wafer needs to be manufactured, and there is no need to form the photonic integrated circuit into a single chip.

[0084] Alternatively, a wafer dicing process can be performed first to form independent photonic integrated circuits / independent optical interconnects containing photonic integrated circuits, and then the mounting process of the first and second electrical chips can be performed, that is, the first and second electrical chips can be mounted on the independent photonic integrated circuits.

[0085] Optionally, multiple independent photonic integrated circuits can be packaged to a certain extent to form multiple independent photonic integrated circuit chips (including bare chips). These photonic integrated circuit chips serve as optical interconnect chips; that is, the optical interconnects can be made using photonic integrated circuit chips. Specifically, the method includes:

[0086] S1001, provides wafers.

[0087] S1002, Multiple photonic integrated circuits are formed on the wafer.

[0088] Each of the plurality of photonic integrated circuits includes a first conductive wiring unit, a second conductive wiring unit, an optical waveguide unit, a first electro-optical conversion unit, and a first photoelectric conversion unit; the first electro-optical conversion unit and the first photoelectric conversion unit are respectively coupled to the optical waveguide unit; the first conductive wiring unit is electrically connected to the first electro-optical conversion unit; and the second conductive wiring unit is electrically connected to the first photoelectric conversion unit.

[0089] S1003. The wafer is divided to obtain multiple independent photonic integrated circuits.

[0090] In this process, multiple photonic integrated circuits are divided into independent photonic integrated circuits, so that each photonic integrated circuit chip includes an independent photonic integrated circuit.

[0091] S1004. Install a first electrical chip and a second electrical chip on each of the plurality of independent photonic integrated circuit chips, such that the first electrical chip is electrically connected to the first conductive wiring unit, and the second electrical chip is electrically connected to the second conductive wiring unit.

[0092] As an example, S1004 can be executed after step S1003, but is not limited to this.

[0093] The first electrical chip and the second electrical chip can communicate through the first conductive wiring unit, the first electro-optical conversion unit, the optical waveguide unit, the first photoelectric conversion unit, and the second conductive wiring unit.

[0094] The specific implementation of step S1002 can be found in the corresponding content of the above embodiments, and will not be repeated here.

[0095] In some embodiments, the photonic integrated circuits in the optical interconnects mentioned above, such as the first optical interconnect and the second optical interconnect, can be formed using the manufacturing steps of the relevant photonic integrated circuits in the above method, and at least one electrical chip is disposed on the first optical interconnect and at least one electrical chip is disposed on the second optical interconnect according to the method mentioned above.

[0096] In some embodiments, the method further includes the step of optically connecting the first optical interconnect to the second optical interconnect using multiple optical fibers. Alternatively, the multiple optical fibers can be replaced by multiple optical waveguides for achieving the optical connection between the first optical interconnect and the second optical interconnect.

[0097] In some embodiments, a method of manufacturing an optical interconnect device includes disposing an optical interconnect on a carrier substrate. For example, a first optical interconnect and a second optical interconnect may be disposed on the carrier substrate.

[0098] It should be noted that any steps in the method provided in this application that are not described in detail can be found in the corresponding content of the above embodiments, and will not be repeated here. Furthermore, the method provided in this application may include other parts or all of the steps in the above embodiments in addition to the steps described above; for details, please refer to the corresponding content of the above embodiments, and will not be repeated here.

[0099] Those skilled in the art should understand that the above-disclosed embodiments are merely implementations of the present invention and should not be construed as limiting the scope of the present invention. Equivalent variations made according to the embodiments of the present invention are still within the scope of the claims of the present invention.

Claims

1. An optical interconnect device, characterized in that, The optical interconnect device includes: First electrical chip, second electrical chip; First optical interconnect; The first electrical chip and the second electrical chip are disposed on the first optical interconnect. The first optical interconnect includes a photonic integrated circuit chip, the photonic integrated circuit chip comprising: Multiple optical waveguides; The first electro-optical conversion unit is connected to the first electrical chip and is used to carry the information carried by the electrical signal of the first electrical chip into the first optical signal; The first photoelectric conversion unit is connected to the second electrical chip and is used to convert the first optical signal into an electrical signal that is transmitted to the second electrical chip. A second electro-optical conversion unit, connected to the second electrical chip, is used to transfer the information carried by the electrical signal of the second electrical chip into a second optical signal; and The second photoelectric conversion unit is connected to the first electrical chip and is used to convert the second optical signal into an electrical signal that is transmitted to the first electrical chip. The transmission path of the first optical signal from the first electro-optical conversion unit to the first photoelectric conversion unit includes at least one of the plurality of optical waveguides in the first optical interconnect. The transmission path of the second optical signal from the second electro-optical conversion unit to the second photoelectric conversion unit includes at least one of the plurality of optical waveguides in the first optical interconnect; The optical interconnect device further includes a second optical interconnect, a third electrical chip, and a plurality of optical fibers, wherein the third electrical chip is disposed on the second optical interconnect, and the plurality of optical fibers optically connect the first optical interconnect and the second optical interconnect. The photonic integrated circuit chip of the first optical interconnect further includes a third electro-optical conversion unit, which is connected to the first electrical chip and is used to carry the information carried by the electrical signal of the first electrical chip to the third optical signal; The second optical interconnect includes a photonic integrated circuit chip, which includes multiple optical waveguides and a third photoelectric conversion unit connected to the third electrical chip for converting the third optical signal into an electrical signal transmitted to the third electrical chip. The transmission path of the third optical signal from the third electro-optical conversion unit to the third photoelectric conversion unit includes: an optical waveguide in the first optical interconnect, at least one optical fiber among the plurality of optical fibers, and an optical waveguide in the second optical interconnect.

2. The optical interconnect device as claimed in claim 1, wherein both the first optical interconnect and the second optical interconnect include an optical coupling structure.

3. The optical interconnect device as described in claim 1 or 2, characterized in that, The photonic integrated circuit chip of the first optical interconnect further includes: a dielectric layer and multiple conductive wiring units; The dielectric layer covers the plurality of optical waveguides, the first electro-optic conversion unit, the first photoelectric conversion unit, the second electro-optic conversion unit, and the second photoelectric conversion unit in the photonic integrated circuit chip of the first optical interconnect. The plurality of conductive wiring units are configured to electrically connect the first electro-optical conversion unit, the first photoelectric conversion unit, the second electro-optical conversion unit, and the second photoelectric conversion unit to the corresponding electrical chip. The plurality of conductive wiring units include a plurality of electrical connection structures, each of which passes through at least a portion of the dielectric layer.

4. The optical interconnect device as claimed in claim 3, characterized in that, The first electro-optical conversion unit and the second electro-optical conversion unit each include one or more optical modulators, and the first photoelectric conversion unit and the second photoelectric conversion unit each include one or more photodetectors.

5. The optical interconnect device as claimed in claim 4, characterized in that, The optical modulator includes a micro-ring modulator; and / or the photodetector includes a micro-ring filter detector.

6. The optical interconnect device as claimed in claim 4, characterized in that, The first, second, and third electrical chips include small chips.

7. An optical interconnect device, characterized in that, include: The first optical interconnect includes a first photonic integrated circuit chip, the first photonic integrated circuit chip including a first plurality of electro-optic conversion units, a first plurality of optical waveguides, and a first plurality of photoelectric conversion units; The second optical interconnect includes a second photonic integrated circuit chip, the second photonic integrated circuit chip including a second plurality of electro-optic conversion units, a second plurality of optical waveguides, and a second plurality of photoelectric conversion units; A plurality of electrical chips are disposed on the first optical interconnect; The second plurality of electrical chips are disposed on the second optical interconnect; The first plurality of electro-optic conversion units are configured such that each of the first plurality of electrical chips corresponds to at least one electro-optic conversion unit; The first plurality of photoelectric conversion units are configured such that each of the first plurality of electrical chips corresponds to at least one photoelectric conversion unit; The first plurality of optical waveguides are configured such that, for any two electrical chips in the first plurality of electrical chips, an electro-optical conversion unit corresponding to one electrical chip is optically connected to a photoelectric conversion unit corresponding to the other electrical chip, so that any two electrical chips in the first plurality of electrical chips can communicate. The first optical interconnect is optically connected to the second optical interconnect; At least one of the first plurality of electrical chips communicates with at least one of the second plurality of electrical chips through the first optical interconnect and the second optical interconnect.

8. The optical interconnect device as claimed in claim 7, characterized in that, Both the first optical interconnect and the second optical interconnect include an optical coupling structure.

9. The optical interconnect device as claimed in claim 8, characterized in that, The first optical interconnect and the second optical interconnect are optically connected through multiple optical fibers or multiple optical waveguides, so that at least one of the first plurality of electrical chips can communicate with at least one of the second plurality of electrical chips.

10. The optical interconnect device as described in any one of claims 8 or 9, wherein the first photonic integrated circuit chip further comprises: Dielectric layer, multiple conductive wiring units; The dielectric layer covers the plurality of optical waveguides, the plurality of electro-optic conversion units, and the plurality of photoelectric conversion units in the first photonic integrated circuit chip. Each of the plurality of conductive wiring units is electrically connected to each of the first plurality of electro-optical conversion units, or is electrically connected to each of the first plurality of photoelectric conversion units; The plurality of conductive wiring units include a plurality of electrical connection structures, each of which passes through at least a portion of the dielectric layer. as well as The plurality of conductive wiring units are electrically connected to the plurality of electrical chips, so that each of the plurality of electro-optical conversion units is electrically connected to the corresponding electrical chip, or each of the plurality of photoelectric conversion units is electrically connected to the corresponding electrical chip.

11. A method for manufacturing an optical interconnect device as described in any one of claims 1-10, characterized in that, include: Provide wafers; Multiple photonic integrated circuits are formed on the wafer; Each of the plurality of photonic integrated circuits may include a plurality of optical waveguides, as well as an electro-optical conversion unit and a photoelectric conversion unit; At least one electrical chip is mounted on each of the plurality of photonic integrated circuits; The wafer is divided to obtain multiple independent optical interconnect devices.

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