Display device

Abstract

A light-emitting diode display device includes: a display panel including light-emitting diodes for each sub-pixel defined on a substrate; and an optical cover window positioned to correspond to the transmission direction of light emitted from the display panel and including a plurality of pyramidal patterns; wherein each of the plurality of pyramidal patterns includes an inner oblique surface corresponding to an arrangement error of the light-emitting diodes.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2021-0178707, filed in Korea on December 14, 2021, which is incorporated herein by reference in its entirety for all purposes as fully illustrated. Technical Field

[0003] The present invention relates to a display device, and more specifically, to a light-emitting diode (LED) display device that can achieve uniform brightness even in the event of LED transfer and arrangement errors. Background Technology

[0004] Recently, as display devices have become larger, the demand for flat panel display devices that take up less space has also increased, and the technology of flat panel display devices such as liquid crystal display devices or organic light-emitting display devices including organic light-emitting diodes (OLEDs) has developed rapidly.

[0005] In this liquid crystal display device, the backlight unit is disposed below the liquid crystal panel, wherein a polarizing plate is attached to the rear and front surfaces of the liquid crystal panel, and therefore, only 5% or less of the light from the light source of the backlight unit passes through the liquid crystal panel, which is a disadvantage in terms of light efficiency.

[0006] In addition, in the case of organic light-emitting display devices, although they have improved luminous efficiency compared to liquid crystal display devices, there are still limitations in luminous efficiency, and there are still disadvantages in terms of the durability and / or lifespan of the display device.

[0007] Therefore, in order to overcome the above-mentioned problems of liquid crystal display devices and / or organic light-emitting display devices, miniature light-emitting diode (miniature LED) display devices have recently been proposed.

[0008] Micro LED display devices are devices that display images by placing ultra-small LEDs (μLEDs) with a size of 100 micrometers (μm) or smaller in each sub-pixel, and have great advantages in terms of low power consumption and miniaturization. Summary of the Invention

[0009] The micro LED display device is manufactured by forming a plurality of micro LEDs on a growth substrate in a process different from the thin-film transistor processing of the substrate, and then transferring each of the plurality of micro LEDs to a substrate on which thin-film transistors are formed.

[0010] At this point, a transfer process is required to precisely place the microLED at the desired location. However, the size of microLEDs has recently been reduced to tens of micrometers, making it difficult to precisely position them at the desired location.

[0011] This, in turn, leads to a decrease in the center brightness and asymmetry in the viewing angle of the micro-LED display, and also causes a sharp decrease in brightness at a specific viewing angle.

[0012] Therefore, this disclosure aims to provide a light-emitting diode (LED) display device that substantially eliminates one or more problems arising from the limitations and disadvantages of related technologies.

[0013] The advantage of this disclosure is that it provides a large-screen and high-resolution light-emitting diode (LED) display device that can prevent the reduction of center brightness and viewing angle asymmetry.

[0014] Another advantage of this disclosure is that it provides a light-emitting diode (LED) display device that can prevent a sharp decrease in brightness at a specific viewing angle.

[0015] Another advantage of this disclosure is that it provides a light-emitting diode (LED) display device that can achieve uniform brightness.

[0016] Other features and advantages of this disclosure will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of this disclosure. These and other advantages of this disclosure will be realized and obtained by means of the structures particularly pointed out in the written description, its claims, and the accompanying drawings.

[0017] To achieve these and other advantages, and for the purposes of this disclosure, as embodied and broadly described herein, a light-emitting diode (LED) display device includes: a display panel including a light-emitting diode for each sub-pixel defined on a substrate; and an optical cover window positioned to correspond to the transmission direction of light emitted from the display panel and including a plurality of pyramidal patterns; wherein each pyramidal lens in the plurality of pyramidal patterns includes an inner oblique surface corresponding to an arrangement error of the light-emitting diode.

[0018] Furthermore, this disclosure also provides a display device, comprising: a display panel including a plurality of light-emitting elements; and a lens layer covering the display panel, including a plurality of pyramidal lenses and arranged in the direction of light transmission emitted from the display panel, wherein each of the plurality of pyramidal lenses includes an inner oblique surface corresponding to an arrangement error of the light-emitting elements. That is, although this disclosure is an improvement made specifically for LED display devices, it is not limited thereto, but can be similarly applied to general display devices, as long as the display device involves arrangement errors of the light-emitting elements.

[0019] It should be understood that both the foregoing general description and the following detailed description are exemplary and explanatory, and are intended to provide further explanation of this disclosure as claimed. Attached Figure Description

[0020] The accompanying drawings are included to provide a further understanding of this disclosure and are incorporated in and form a part of this specification. The drawings illustrate embodiments of the disclosure and, together with the specification, serve to explain the principles of the disclosure. In the drawings:

[0021] Figure 1 This is a schematic perspective view of a miniature LED display device according to an embodiment of the present disclosure;

[0022] Figure 2 This schematically illustrates a cross-sectional view of a micro LED display device according to an embodiment of the present disclosure;

[0023] Figure 3 It is shown schematically. Figure 2 A cross-sectional view of a miniature LED;

[0024] Figure 4 This is a schematic perspective view of an optical cover window according to an embodiment of the present disclosure;

[0025] Figures 5A to 5C It schematically shows the perspective view and plan view of the pyramidal pattern of the optical cover window;

[0026] Figures 6A to 6F This schematically illustrates a cross-sectional view of a pyramidal pattern designed to reflect the arrangement errors of micro-LEDs according to embodiments of the present disclosure; and

[0027] Figures 7A to 7B These are simulation results used to explain the effects of this disclosure. Detailed Implementation

[0028] In the following description, embodiments according to the present disclosure are illustrated with reference to the accompanying drawings.

[0029] Figure 1This is a schematic perspective view of a micro LED display device according to an embodiment of the present disclosure.

[0030] like Figure 1 As shown, the micro LED display device 100 according to an embodiment of the present disclosure may include a display panel 110 and an optical cover window 200. Note that although a micro LED display device is used as an example of a display device in the embodiment, the present disclosure is not limited thereto.

[0031] The display panel may include a pixel array 120 disposed on a substrate 101, and a gate driving circuit 130, a data driving circuit 140, and a control circuit 150 for driving the pixel array 120.

[0032] In pixel array 120, multiple gate lines and multiple data lines can be positioned. Pixel array 120 may include multiple sub-pixels SP disposed at the intersection of gate lines and data lines.

[0033] Additionally, driving voltage lines, common voltage lines, etc., can be set to apply voltages, signals, etc., to drive sub-pixels SP.

[0034] Each subpixel SP may include light-emitting elements such as micro LEDs for displaying images. Figure 2 130), and for driving micro LEDs ( Figure 2 One or more driving transistors (of type 130). These will be described in more detail later. Note that although an LED is used as an example of a light-emitting element in the embodiments, this disclosure is not limited thereto.

[0035] The gate driving circuit 130 can be controlled by the control circuit 150, and can sequentially output scanning signals to multiple gate lines arranged in the pixel array 120 to control the driving timing of multiple sub-pixels SP.

[0036] The gate drive circuit 130 may include one or more gate driver integrated circuits (GDICs) and may be located on only one or both sides of the pixel array 120, depending on the driving method.

[0037] Alternatively, the gate drive circuit 130 may be located on the rear surface of the pixel array 120 or the substrate 101.

[0038] The data driving circuit 140 can receive image data from the control circuit 150 and convert the image data into analog data voltage. Furthermore, the data driving circuit 140 can output the data voltage to each data line according to the timing of the scan signal applied through the gate line, so that each sub-pixel SP can express the brightness according to the image data.

[0039] The data drive circuit 140 may include one or more source driver integrated circuits (SDICs).

[0040] The control circuit 150 can supply various control signals to the gate drive circuit 130 and the data drive circuit 140, and can control the operation of the gate drive circuit 130 and the data drive circuit 140.

[0041] The control circuit 150 may be a timing controller or a controller that includes a timing controller.

[0042] Therefore, the control circuit 150 can enable the gate drive circuit 130 to output a scan signal according to the timing implemented in each frame, and can convert the image data received from the outside to match the data signal format used by the data drive circuit 140, and output the converted image data to the data drive circuit 140.

[0043] The control circuit 150 can generate various control signals using various timing signals received from the outside, and can output various control signals to the gate drive circuit 130 and the data drive circuit 140.

[0044] The display panel 110 may also include a power management integrated circuit that supplies various voltages or currents to the pixel array 120, the gate driving circuit 130, and the data driving circuit 140, or controls the various voltages or currents to be supplied.

[0045] Meanwhile, the display panel 110 of the micro LED display device 100 can utilize micro LEDs grown on a separate wafer substrate. Figure 2 The 130) is transferred to the sub-pixel SP of the pixel array 120 defined on the substrate 101.

[0046] At this time, the feature of the micro LED display device 100 according to the embodiments of the present disclosure may be that the optical cover window 200 corresponds to the micro LED ( Figure 2 The direction of light transmission emitted by the 130) is located in front of the display panel 110.

[0047] Therefore, in the micro-LED display device 100 according to the embodiments of the present disclosure, even if the micro-LED ( Figure 2 During the process of transferring the 130 to the substrate 101, micro-LEDs may appear. Figure 2 The arrangement error of 130) can also prevent the reduction of the center brightness and the asymmetry of the viewing angle of the micro LED display device 100.

[0048] In addition, it can prevent a sharp decrease in brightness at specific viewing angles.

[0049] The following is a more detailed description of it with reference to the attached diagram.

[0050] Figure 2 The diagram schematically shows a cross-sectional view of a microLED display device according to an embodiment of the present disclosure, illustrating three sub-pixels of the microLED display device.

[0051] Figure 3 It is shown schematically. Figure 2 A cross-sectional view of a micro LED.

[0052] Before the description, although each of the sub-pixels R-SP, G-SP and B-SP defined on the substrate 101 is provided with a driving thin-film transistor DTr and a switching thin-film transistor (not shown), for ease of explanation and to simplify the drawings, the driving thin-film transistor DTr is shown only in one sub-pixel R-SP.

[0053] like Figure 2 As shown, the micro LED display device 100 may include a display panel 110 (see Figure 110). Figure 1 ; Figure 2 (Only a portion of the structure of the display panel 110 is shown in the figure) and the optical cover 200. If the orientation in the figures is defined for ease of explanation, the optical cover 200 is positioned in front of the display panel 110 with the display surface of the display panel 110 facing forward.

[0054] More specifically, a plurality of sub-pixels R-SP, G-SP, and B-SP may be defined on the substrate 101 of the display panel 110. Each of the plurality of sub-pixels R-SP, G-SP, and B-SP may be defined by a cross structure of gate lines and data lines, but is not limited thereto.

[0055] Each of the sub-pixels R-SP, G-SP, and B-SP may include an emission region EA corresponding to the micro-LED 130, and a non-emission region NA may be formed along the edge of the emission region EA.

[0056] Furthermore, the switching region TrA, in which the driving thin-film transistor DTr is formed, can be defined on one side of the non-emitting region NA. A semiconductor layer 113 can be located on the switching region TrA. The semiconductor layer 113 can be made of silicon (Si) or oxide material, and can include an active region 113a located at its central portion and forming a channel, and a source region 113b and a drain region 113c doped with a high concentration of impurities on both sides of the active region 113a.

[0057] The gate insulating layer 115 may be located on the semiconductor layer 113.

[0058] A gate electrode 114 may be disposed on the gate insulating layer 115 to correspond to the active region 113a of the semiconductor layer 113. In this disclosure, a top-gate thin-film transistor is described, wherein the gate electrode 114 is located on the gate insulating layer 115 and the semiconductor layer 113 is located below the gate insulating layer 115; however, this disclosure is not limited thereto. For example, a bottom-gate thin-film transistor may be used, wherein the gate electrode 114 is located below the gate insulating layer 115 and the semiconductor layer 113 is located on the gate insulating layer 115.

[0059] Additionally, the first interlayer insulating layer 116a may be located on the gate electrode 114. In this case, the first interlayer insulating layer 116a and the gate insulating layer 115 below it may include a first semiconductor layer contact hole 117a and a second semiconductor layer contact hole 117b that expose the source region 113b and the drain region 113c located on both sides of the active region 113a, respectively.

[0060] A source electrode 119a and a drain electrode 119b can be disposed on a first interlayer insulating layer 116a, which includes a first semiconductor layer contact hole 117a and a second semiconductor layer contact hole 117b. The source electrode 119a and the drain electrode 119b are spaced apart from each other and respectively contact the source region 113b and the drain region 113c exposed through the first semiconductor layer contact hole 117a and the second semiconductor layer contact hole 117b.

[0061] The source electrode 119a can be connected to the data line, and the common voltage line 108 can be further formed parallel to the data line on the first interlayer insulating layer 116a.

[0062] Optionally, a common voltage line 108 can be provided for each of the plurality of unit pixels. In this case, at least three sub-pixels R-SP, G-SP, and B-SP constituting each unit pixel can share a common voltage line 108. Therefore, the number of common voltage lines 108 used to drive each of the sub-pixels B-SP, G-SP, and R-SP can be reduced, and the aperture ratio of each unit pixel can be increased, or the size of each unit pixel can be reduced according to the reduced number of common voltage lines 108.

[0063] The second interlayer insulation layer 116b may be located on the source electrode 119a and the drain electrode 119b, the common voltage line 108, and the first interlayer insulation layer 116a exposed between the two electrodes 119a and 119b.

[0064] At this time, the source electrode 119a and drain electrode 119b, the semiconductor layer 113 including the source region 113b and drain region 113c in contact with the source electrode 119a and drain electrode 119b, and the gate insulating layer 115 and gate electrode 114 located on the semiconductor layer 113 can form a driving thin film transistor DTr.

[0065] In addition, the switching thin-film transistor (not shown) may have the same structure as the driving thin-film transistor DTr and may be electrically connected to the driving thin-film transistor DTr.

[0066] Here, in the accompanying drawings, the switching thin-film transistor (not shown) and the driving thin-film transistor (DTr) are shown by way of example configured as a top-gate thin-film transistor as an example in which the semiconductor layer 113 is made of a silicon semiconductor layer or an oxide semiconductor layer, but as a modification thereto, it can be configured as a bottom-gate type.

[0067] Additionally, the micro-LED 130 can be located on the second interlayer insulating layer 116b to correspond to the emission region EA of each of the sub-pixels R-SP, G-SP, and B-SP. The micro-LED 130 can be disposed on the second interlayer insulating layer 116b using an adhesive component (not shown).

[0068] Here, refer to Figure 3 Referring more closely to the structure of the micro LED 130, each micro LED 130 may include an n-type electrode 133, a light-emitting layer, and a p-type electrode 139.

[0069] The light-emitting layer can emit light through the recombination of electrons and holes based on the current flowing between the n-type electrode 133 and the p-type electrode 139. The light-emitting layer may include a first semiconductor layer 131, an active layer 135, and a second semiconductor layer 137.

[0070] The second semiconductor layer 137 can provide holes to the active layer 135. The second semiconductor layer 137 can be made of a p-GaN-based semiconductor material, and the p-GaN-based semiconductor material can be GaN (gallium nitride), AlGaN (aluminum gallium nitride), InGaN (indium gallium nitride), or AlInGaN (aluminum indium gallium nitride). Here, Mg (magnesium), Zn (zinc), or Be (beryllium) can be used as impurities for doping the second semiconductor layer 137.

[0071] The active layer 135 located below the second semiconductor layer 137 can have a multiple quantum well (MQW) structure, which has a well layer and a barrier layer with a band gap higher than the well layer.

[0072] The active layer 135 can have a multi-quantum-well structure, such as InGaN / GaN.

[0073] A first semiconductor layer 131 located below the active layer 135 can be used to provide electrons to the active layer 135. The first semiconductor layer 131 can be made of an n-GaN-based semiconductor material, and the n-GaN-based semiconductor material can be GaN (gallium nitride), AlGaN (aluminum gallium nitride), InGaN (indium gallium nitride), or AlInGaN (aluminum indium gallium nitride). Here, as impurities used to dope the first semiconductor layer 131, Si (silicon), Ge (germanium), Se (selenium), Te (tellurium), or C (carbon) can be used.

[0074] The p-type electrode 139 can be disposed on the second semiconductor layer 137 and can be used as a cathode to provide holes to the second semiconductor layer 137. The n-type electrode 133 can be disposed on the other side of the first semiconductor layer 131 to be electrically isolated from the active layer 135 and the first semiconductor layer 131, and the n-type electrode 133 can be used as an anode to provide electrons to the first semiconductor layer 131.

[0075] In this configuration, depending on the light-emitting direction of the micro-LED 130, each of the n-type electrode 133 and the p-type electrode 139 can be formed of a conductive transparent material or a conductive reflective material. As an example, the conductive transparent material can be indium tin oxide (ITO) or indium zinc oxide (IZO), but is not limited thereto. The conductive reflective material can be one or more of metallic materials and alloys thereof, such as Au (gold), W (tungsten), Pt (platinum), Si (silicon), Ir (iridium), Ag (silver), Cu (copper), Ni (nickel), and Ti (titanium), but is not limited thereto.

[0076] Therefore, in the case of a bottom-emitting structure in which the light emitted from the micro-LED 130 travels toward the substrate 101, each of the n-type electrode 133 and the p-type electrode 139 can be made of a conductive reflective material. In the case of a top-emitting structure in which the light emitted from the micro-LED 130 travels in the opposite direction to the substrate 101, each of the n-type electrode 133 and the p-type electrode 139 can be made of a transparent conductive material.

[0077] In the following text, the top light-emitting structure is described as an example, and therefore, each of the n-type electrode 133 and p-type electrode 139 made of conductive transparent material is described as an example.

[0078] The micro LED 130 can emit light by recombination of electrons and holes based on the current flowing between the n-type electrode 133 and the p-type electrode 139.

[0079] A reflective pattern (not shown) may be further located between the first semiconductor layer 131 and the second interlayer insulating film 116b of the microLED 130, and an insulating pattern (not shown) may be located between the reflective pattern and the first semiconductor layer 131.

[0080] The reflective pattern can reflect upward light emitted from the microLED 130 toward the substrate 101, thereby improving the light efficiency of the microLED 130.

[0081] The third interlayer insulating layer 116c may be located on the microLED 130 positioned for each of the sub-pixels R-SP, G-SP, and B-SP. The third interlayer insulating layer 116c, together with the second interlayer insulating layer 116b, may include a drain contact hole PH1 exposing the drain electrode 119b of the driving thin-film transistor DTr and a common contact hole PH2 exposing the common voltage line 108.

[0082] Additionally, the third interlayer insulating layer 116c may include first electrode contact holes 118a and second electrode contact holes 118b that expose the p-type electrode 139 and n-type electrode 133 of the microLED 130 positioned for each of the sub-pixels R-SP, G-SP, and B-SP, respectively. On the third interlayer insulating layer 116c, a first connection electrode 111 and a second connection electrode 112 may be positioned, wherein the first connection electrode 111 electrically connects the drain electrode 119b of the driving thin-film transistor DTr exposed through the drain contact hole PH1 to the p-type electrode 139 of the microLED 130 exposed through the first electrode contact hole 118a, and the second connection electrode 112 electrically connects the common voltage line 108 exposed through the common contact hole PH2 to the n-type electrode 133 of the microLED 130 exposed through the second electrode contact hole 118b.

[0083] In order to transmit light emitted from the active layer 135 of the micro LED 130, all of the first connecting electrode 111 and the second connecting electrode 112 can be transparent conductive oxides, such as indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), zinc oxide (ZnO) and tin oxide (TO) transparent conductive oxides, but not limited thereto.

[0084] Therefore, the p-type electrode 139 of the micro-LED 130 can be electrically connected to the drain electrode 119b of the driving thin-film transistor DTr via the first connection electrode 111. The n-type electrode 133 of the micro-LED 130 can be electrically connected to the common voltage line 108 via the second connection electrode 112, so that the micro-LED 130 located in each of the sub-pixels R-SP, G-SP and B-SP can emit light.

[0085] In this case, the combination of sub-pixels R-SP, G-SP and B-SP can define a unit pixel, and each of the sub-pixels R-SP, G-SP and B-SP can emit light of various colors.

[0086] In other words, sub-pixels R-SP, G-SP, and B-SP can include red sub-pixels R-SP, green sub-pixels G-SP, and blue sub-pixels B-SP. Red light can be emitted from the emission region EA of the red sub-pixel R-SP, green light can be emitted from the emission region EA of the green sub-pixel G-SP, and blue light can be emitted from the emission region EA of the blue sub-pixel B-SP, but is not limited thereto.

[0087] Additionally, the micro-LEDs 130 positioned corresponding to the emission regions EA of sub-pixels R-SP, G-SP, and B-SP can emit different colors of light or the same color of light. For example, when the micro-LEDs 130 emit different colors of light, the micro-LED 130 located in the red sub-pixel R-SP emits red light, the micro-LED 130 located in the green sub-pixel G-SP emits green light, and the micro-LED 130 located in the blue sub-pixel B-SP emits blue light.

[0088] Furthermore, the micro-LEDs 130 positioned corresponding to the emission regions EA of sub-pixels R-SP, G-SP, and B-SP can all emit light of the same color. By using light conversion components such as the light conversion layer on each of the sub-pixels R-SP, G-SP, and B-SP, the light emitted from each micro-LED 130 can be converted into light of various colors.

[0089] Here, the light conversion component can be positioned corresponding to each of the sub-pixels R-SP, G-SP, and B-SP. The light conversion component can be implemented by inkjet printing or dotting on each micro-LED 130 to place light conversion materials such as nano-phosphors, organic phosphors, or quantum dots, such as photoacrylic acid, silicon oxide (SiOx), or silicon nitride (SiNx).

[0090] After placing the thin-film encapsulation substrate 102 on the driving thin-film transistor DTr and the micro-LED 130, a transparent buffer layer 103 can be inserted between the micro-LED 130 and the encapsulation substrate 102 to bond the encapsulation substrate 102 and the substrate 101, thereby encapsulating the display panel 110.

[0091] A transparent buffer layer 103 may be disposed on the substrate 101 to cover the entire third interlayer insulating layer 116c, thereby providing a flat surface on the third interlayer insulating layer 116c and protecting the micro LED 130 and the driving thin film transistor (DTr) from external impacts.

[0092] The transparent buffer layer 103 may be made of optically transparent adhesive (OCA) or optically transparent resin (OCR), but is not limited to these.

[0093] Here, a feature of the micro-LED display device 100 according to an embodiment of the present disclosure is that the optical cover window 200 is located in front of the display panel 110 corresponding to the light transmission direction of the light emitted by the micro-LEDs 130 through the display panel 110. The optical cover window 200 may include a pyramidal pattern ( Figure 4 (210), the pyramidal pattern includes an inner oblique surface corresponding to the arrangement error range of the micro-LEDs 130. Figure 5B (213a, 213b, 213c and 213d), the arrangement error range may occur during the process of transferring the micro-LED 130 onto the substrate 101.

[0094] More specifically, in the micro-LED display device 100, micro-LEDs can be transferred for each of the sub-pixels R-SP, G-SP, and B-SP on a substrate 101 on which driving thin-film transistors DTr are disposed. Micro-LEDs 130 can be epitaxially grown on a wafer substrate made of at least one of sapphire, SiC, Si (silicon), GaAs (gallium arsenide), GaN (gallium nitride), ZnO (zinc oxide), GaP (gallium phosphide), InP (indium phosphide), Ge (germanium), and Ga2O3 (gallium oxide), and can be transferred to the substrate 101, and can be disposed for each of the sub-pixels R-SP, G-SP, and B-SP.

[0095] Here, the micro-LED 130 can typically have a size ranging from 5μm to 100μm, and it is difficult to precisely position the micro-LED 130 at the desired location. Therefore, placement errors of the micro-LED 130 will occur during the transfer or assembly of the micro-LED 130.

[0096] This arrangement error of the micro-LEDs 130 results in reduced center brightness and asymmetrical viewing angle of the micro-LED display device 100, and also causes a sharp decrease in brightness at a specific viewing angle.

[0097] Therefore, in the micro-LED display device 100 according to an embodiment of the present disclosure, the optical cover window 200 may be located in front of the display panel 110 corresponding to the light transmission direction of the light emitted by the micro-LED 130 through the display panel 110, and may include an inner inclined surface having an arrangement error range. Figure 5B pyramidal patterns (213a, 213b, 213c and 213d) Figure 4(210), thereby compensating for the brightness degradation and uniformity caused by the arrangement error of the micro LED 130.

[0098] Therefore, even if there is an arrangement error of the micro-LED 130, it can prevent the center brightness of the micro-LED display device 100 from decreasing and the viewing angle from becoming asymmetrical, and it can also prevent a sharp decrease in brightness at a specific viewing angle.

[0099] Figure 4 This is a schematic perspective view of an optical cover window according to an embodiment of the present disclosure, and Figures 5A to 5C It schematically shows the perspective view and plan view of the pyramidal pattern of the optical cover window.

[0100] Figures 6A to 6F This schematically illustrates a cross-sectional view of a pyramidal pattern designed according to an embodiment of the present disclosure, reflecting the arrangement error of the micro-LEDs.

[0101] like Figure 4 As shown, the optical cover window 200 may include a lens layer 203 located on an optional and omitible base film 201.

[0102] The base film 201 can be a component that maintains the overall strength of the optical cover window 200 and forms a lens layer 203 on its surface. The lens layer 203 can include a plurality of pyramidal patterns 210 spaced apart from each other, and these pyramidal patterns 210 can also be referred to as pyramidal lenses. The pyramidal patterns 210 can protrude from one surface of the base film 201.

[0103] At this time, multiple pyramidal patterns 210 can be arranged adjacent to each other in the longitudinal and transverse directions of the base film 201, and can be arranged so that there is no empty space between adjacent pyramidal patterns 210.

[0104] Here, the base film 201 and the lens layer 203 can preferably be made of a transmissive material capable of transmitting light. Since the optical cover window 200 corresponds to the light transmitted through the display panel ( Figure 2 110) miniature LEDs Figure 2 The direction of light transmission emitted by the 130) is located on the display panel ( Figure 2 In front of the base film 201 and the lens layer 203, it is preferred that the base film 201 and the lens layer 203 have low light scattering and high transparency in the visible light region.

[0105] For example, the base film 201 and the lens layer 203 may be made of polyester, polyacrylic acid, polyvinyl chloride, polycarbonate, polymethyl methacrylate, polystyrene, polyester sulfone, polybutadiene, cellulose triacetate film (TAC), cyclic olefin polymer (COP), polyethylene terephthalate (PET) or acrylic film, but are not limited thereto.

[0106] Because the optical cover 200 is set in the micro LED display device ( Figure 2 The optical cover 200 is located at the outermost edge of the 100), therefore preferably, the optical cover 200 is at the outermost edge of the display panel (100). Figure 2 (110) has a minimum thickness within the limit of rigidity to protect against external impacts, and therefore has high transparency.

[0107] In other words, the optical cover window 200 can have a thickness of 20μm to 80μm, and when it has a thickness of 50μm, the optical cover window 200 can achieve both rigidity and high transparency.

[0108] Furthermore, preferably, the optical cover window 200 has a refractive index greater than or equal to 1.0 and less than or equal to 1.54, and therefore has high transparency and no haze characteristics. Haze characteristics can be defined as the opacity phenomenon (e.g., blurring) that occurs when light passes through a transparent material and is diffused according to the inherent properties of the material.

[0109] In other words, preferably, by forming the refractive index of the optical cover window 200 to be greater than 1.0, which is the refractive index of air, when the micro-LED ( Figure 2 When light emitted from the optical cover window (130) passes through the optical cover window 200 and is refracted into the air, it prevents the light from being refracted and diffused. Furthermore, when the refractive index of the optical cover window 200 is greater than or equal to 1.54, the optical cover window 200 exhibits haze characteristics. Therefore, it is preferable that the optical cover window 200 has a refractive index greater than or equal to 1.0 and less than or equal to 1.54.

[0110] Furthermore, in the optical cover window 200 of this disclosure, it is preferable that the size of the pyramidal pattern 210 of the lens layer 203 is set to have a size of 50 μm or smaller, and therefore will not generate haze characteristics.

[0111] [Table 1]

[0112] 60 100 50 100 40 99 30 97 25 96 20 94 10 90 5 70

[0113] Table 1 shows the experimental results of measuring the brightness changes relative to the size of the pyramidal pattern 210 of the optical cover window 200. The optical cover window 200 used in the experiment was made of polyethylene terephthalate (PET) and had a thickness of 50 μm.

[0114] In Table 1, the brightness indication corresponds to the brightness of the micro-LED ( Figure 2 The optical cover 200 is positioned on the display panel according to the direction of light transmission emitted by the 130) light. Figure 2 The amount of output light measured in front of (110).

[0115] At this time, the miniature LED display device ( Figure 2 100) sub-pixels ( Figure 2 The area of ​​each of the R-SP, G-SP, and B-SP is 50 μm, and the size of the pyramidal pattern 210 is designed to be consistent with that of the sub-pixels ( Figure 2 When the areas of each of the R-SP, G-SP, and B-SP are equal, the luminance is defined as 100%.

[0116] As can be seen from Table 1 above, as the size of the pyramidal pattern 210 of the optical cover window 200 increases, the micro LED display device is improved. Figure 2 The overall brightness of the pyramidal pattern 210 is 100. When the size of the pyramidal pattern 210 is similar to or larger than that of the micro LED display device ( Figure 2 The sub-pixel of 100 in the middle ( Figure 2 When calculating the area of ​​each of the R-SP, G-SP, and B-SP, the pyramidal pattern 210 is related to the sub-pixels ( Figure 2 Each of the R-SP, G-SP and B-SP overlaps, and therefore the Mohr phenomenon may occur.

[0117] Therefore, the size of the pyramidal pattern 210 is preferably smaller than that of the micro LED display device. Figure 2 The sub-pixel of 100 in the middle ( Figure 2 The area of ​​each of the R-SP, G-SP and B-SP.

[0118] Furthermore, as the size of the pyramidal pattern 210 decreases, the optical cover window 200 exhibits haze characteristics, which may reduce brightness. Therefore, it is preferable that the size of the pyramidal pattern 210 is greater than 25 μm and less than 50 μm to prevent both brightness degradation and moiré effect.

[0119] The optical cover window 200 according to embodiments of the present disclosure can have a thickness of 20 μm to 80 μm, more preferably 50 μm. Furthermore, the optical cover window 200 can have a refractive index greater than or equal to 1.0 and less than or equal to 1.54, and the size of the pyramidal pattern 210 of the lens layer 203 can be greater than 25 μm and less than 50 μm. By forming the optical cover window 200 in this manner, brightness reduction can be prevented, and moiré effects can be eliminated or reduced.

[0120] Therefore, as a micro LED display device ( Figure 2 An optical cover window 200, according to an embodiment of the present disclosure, is located at the outermost part of the display panel (100). The optical cover window 200 can protect the display panel (100). Figure 2 (110) is protected from external impacts, and the optical cover has high transparency, thus ensuring an aesthetically pleasing appearance without visual distortion.

[0121] The pyramidal pattern 210 of the lens layer 203 according to embodiments of the present disclosure reflects the possible occurrence of micro-LEDs ( Figure 2 130) transferred to substrate ( Figure 2 The process of micro LEDs (101) Figure 2 The arrangement error of 130° allows it to have various shapes.

[0122] Here, the pyramidal pattern 210 can be used to guide light forward and direct light incident on a predetermined area to one side.

[0123] Therefore, the micro LED display device according to the embodiments of this disclosure ( Figure 2 The 100% accuracy can prevent a decrease in center brightness and asymmetry in viewing angle. Furthermore, embodiments of this disclosure can also prevent a sharp decrease in brightness at specific viewing angles.

[0124] Reference Figure 5A When micro LEDs ( Figure 2 130) was precisely transferred to the substrate ( Figure 2 When the desired position is on the optical cover window 200 (101), the pyramidal pattern 210 of the optical cover window 200 may include: a lower surface 212 formed by a square; and four side surfaces 214 extending from the edge of the lower surface 212 to form a corner.

[0125] Here, the base angle θ between each side surface 214 and the bottom surface 212 of the pyramidal pattern 210 can vary according to the size of the pyramidal pattern 210.

[0126] At this time, since the size of the pyramidal pattern 210 is greater than 25μm and less than 50μm to prevent brightness reduction and eliminate moiré effect, the four side surfaces 214 can be made into various angles according to the size of the pyramidal pattern 210, within the limit that an angle can be formed from the lower surface 212 of the square in the form of a pyramid.

[0127] For example, when the pyramidal pattern 210 has a size of 50 μm, each of the side surfaces 214 can form a base angle θ of 45° with the bottom surface 212, and all the side surfaces 214 can be symmetrical.

[0128] Reference Figure 5B and Figure 5C When transferring micro LEDs ( Figure 2 During the process of (130), micro LEDs appeared ( Figure 2When there is an arrangement error of 130), the pyramidal pattern 210 of the lens layer 203 according to an embodiment of the present disclosure may have: a lower surface 212 formed by a square; a first outer surface to a fourth outer surface 211a, 211b, 211c and 211d extending from the edge of the lower surface 212 to the top of the pyramidal pattern 210 respectively; and a first inner oblique surface to a fourth inner oblique surface 213a, 213b, 213c and 213d, the first inner oblique surface to the fourth inner oblique surface 213a, 213b, 213c and 213d being connected to the first outer surface to the fourth outer surface 211a, 211b, 211c and 211d to form a center point angle 215 corresponding to the central portion of the lower surface 212.

[0129] At this time, between the first outer surface 211a and the second outer surface 211b, a first inner inclined surface 213a facing the first outer surface 211a and a second inner inclined surface 213b facing the second outer surface 211b can be positioned, so that the first outer surface 211a, the first inner inclined surface 213a, the second inner inclined surface 213b and the second outer surface 211b form a mountain and a valley.

[0130] The third outer surface 211c and the fourth outer surface 211d can be disposed adjacent to the second outer surface 211b and the first outer surface 211a, respectively. In this case, a third inner inclined surface 213c facing the third outer surface 211c and a fourth inner inclined surface 213d facing the fourth outer surface 211d can be positioned between the third outer surface 211c and the fourth outer surface 211d.

[0131] Therefore, the second outer surface 211b and the third outer surface 211c form a mountain, and the first outer surface 211a and the fourth outer surface 211d form a mountain. The third outer surface 211c and the third inner inclined surface 213c form a mountain, and the fourth outer surface 211d and the fourth inner inclined surface 213d form a mountain. The third inner inclined surface 213c and the fourth inner inclined surface 213d form a valley. Therefore, the third outer surface 211c, the third inner inclined surface 213c, the fourth inner inclined surface 213d, and the fourth outer surface 211d form a mountain and a valley.

[0132] At this time, when Figure 2 The arrangement error of the miniature LED 130 appears in the +X axis direction as defined in the attached figure (see figure). Figure 5C When the first angle 217a formed by the first outer surface 211a and the fourth outer surface 211d, and the first inner inclined surface 213a and the fourth inner inclined surface 213d is applied, the height h1 can be determined by reflecting this arrangement error. Additionally, when... Figure 2 The arrangement error of the miniature LED 130 appears in the -X-axis direction as defined in the attached figure (see figure). Figure 5CWhen the second angle 217b formed by the second outer surface 211b and the third outer surface 211c, as well as the second inner inclined surface 213b and the third inner inclined surface 213c, is on the surface, the height h2 of the second angle 217b can be determined by reflecting the arrangement error.

[0133] Therefore, in the optical cover window 200 according to an embodiment of the present disclosure, depending on the transfer to the substrate ( Figure 2 The micro LEDs on 101) Figure 2 Due to the arrangement error of 130), the heights h1 and h2 of the first angle 217a and the second angle 217b of the pyramidal pattern 210 of the lens layer 203 may be equal or different from each other.

[0134] Here, it can be achieved by setting a transfer micro-LED ( Figure 2 The average positioning error in the repeated arrangement process of the 130) is used to design micro LEDs ( Figure 2 The arrangement error is 130).

[0135] Reference Figures 6A to 6F To describe it in more detail.

[0136] Figures 6A to 6F This schematically illustrates a cross-sectional view of a pyramidal pattern designed according to an embodiment of the present disclosure, reflecting the arrangement error of the micro-LEDs.

[0137] Here, refer to Figure 5C The pyramidal pattern 210 according to an embodiment of the present disclosure will be described in more detail below. In the pyramidal pattern 210, the first outer surface 211a and the fourth outer surface 211d may form a first corner surface 218a, and the first outer surface 211a and the first inner oblique surface 213a may form a third corner surface 218c.

[0138] In addition, the second outer surface 211b and the third outer surface 211c can form the second corner surface 218b, and the second outer surface 211b and the second inner oblique surface 213b can form the fourth corner surface 218d.

[0139] At this time, when the micro LED ( Figure 2 (130) When the arrangement error during the transfer process occurs at 2μm in the +X axis direction as defined in the attached figure, such as Figure 6A As shown, when the size of the pyramidal pattern 210 is 50 μm, the second corner surface 218b of the pyramidal pattern 210 forms a base angle θ of 45° with the lower surface 212, but the fourth corner surface 218d forms a base angle θ' of more than 45° with the lower surface 212. Therefore, the second corner surface 218b and the fourth corner surface 218d are asymmetrical to each other.

[0140] At this time, the height h2 of the second corner 217b formed by the aggregation of the second corner surface 218b and the fourth corner surface 218d is formed to be reduced by 2 μm along the length direction of the second corner surface 218b. This 2 μm is the height of the micro LED ( Figure 2 The arrangement error x of 130). Therefore, the fourth corner surface 218d is formed to have a bottom angle θ' greater than 45° with the lower surface 212, and the second corner surface 218b and the fourth corner surface 218d are asymmetrical to each other.

[0141] Here, when micro LEDs ( Figure 2 When the arrangement error x of 130) is repeatedly generated together in one direction, the height h1 of the first angle 217a formed by the first outer surface 211a and the first inner inclined surface 213a is also formed to be reduced by 2μm along the length direction of the first angle surface 218a, so that the first inner inclined surface 213a and the second inner inclined surface 213b are symmetrical to each other.

[0142] Additionally, when micro LEDs ( Figure 2 When the arrangement error x' of 130) is 4μm in the -X axis direction as defined in the attached figure, such as Figure 6B As shown, the height h1 of the first corner 217a formed by the aggregation of the first corner surface 218a and the third corner surface 218c of the pyramidal pattern 210 is formed to decrease by 4 μm along the length direction of the first corner surface 218a. This 4 μm is the height of the micro LED ( Figure 2 The arrangement error x' of 130). Therefore, the first corner surface 218a is formed with a base angle θ of 45° with the lower surface 212, but the third corner surface 218c is formed with a base angle θ' greater than 45° with the lower surface 212, so that the first corner surface 218a and the third corner surface 218c are asymmetrical with each other.

[0143] At this time, the height h2 of the second angle 217b formed by the second outer surface 211b and the second inner oblique surface 213b is also formed to be reduced by 4μm in the length direction of the second angle surface 218b, so that the first inner oblique surface 213a and the second inner oblique surface 213b are formed to be symmetrical to each other.

[0144] Alternative site, when micro LEDs ( Figure 2 When the arrangement errors x and x' of 130) are combined to be 3 μm in the -X-axis direction and 4 μm in the +X-axis direction as defined in the attached figures, such as Figure 6C As shown, to make the third corner surface 218c asymmetrical with the first corner surface 218a, the height h1 of the first corner 217a formed by the aggregation of the first corner surface 218a and the third corner surface 218c is formed to be reduced by 3 μm along the length direction of the first corner surface 218a. This 3 μm is the height of the micro LED ( Figure 2 The arrangement error x is 130).

[0145] Furthermore, to make the fourth corner surface 218d asymmetrical with the second corner surface 218b, the height h2 of the second corner 217b formed by the aggregation of the second corner surface 218b and the fourth corner surface 218d is formed to be reduced by 4 μm along the length direction of the second corner surface 218b. This 4 μm is the height of the micro-LED ( Figure 2 The arrangement error x' is 130).

[0146] At this time, each of the first corner surface 218a and the second corner surface 218b is formed to have a base angle θ of 45° with the lower surface 212, but each of the third corner surface 218c and the fourth corner surface 218d is formed to have a base angle θ' of more than 45° with the lower surface 212, such that the first corner surface 218a and the third corner surface 218c are asymmetrical with each other, and the second corner surface 218b and the fourth corner surface 218d are also asymmetrical with each other.

[0147] The first inner oblique surface 213a and the second inner oblique surface 213b are also asymmetrical to each other.

[0148] In other words, in the optical cover window 200 according to an embodiment of the present disclosure, the pyramidal pattern 210 of the lens layer 203 can have a similar shape to that of a micro-LED ( Figure 2 The arrangement error of 130 corresponds to various shapes, and this arrangement error is related to the transfer of micro LEDs ( Figure 2 This occurs during the process of 130 (in the process). In this regard, when micro-LEDs ( Figure 2 When the arrangement error of 130) does not occur, the pyramidal pattern 210 can be formed such that the four side surfaces 214 extend from the lower surface 212 to form a corner, as shown below. Figure 5A As shown in the image. Additionally, when the micro-LED ( Figure 2 When an arrangement error of 130) occurs, the heights h1 and h2 of the first angle 217a and the second angle 217b can be made equal to each other, corresponding to the range of arrangement error x or x', such as Figure 5B , Figure 6A and Figure 6B As shown in the image.

[0149] Additionally, when micro LEDs ( Figure 2 When the arrangement error of 130) occurs, the heights h1 and h2 of the first angle 217a and the second angle 217b can be formed differently corresponding to the range of arrangement error x or x', i.e., as Figure 6C The heights (h1, h2) are shown in the figure.

[0150] Here, in Figures 6A to 6CIn this paper, only the first outer surface 211a and the second outer surface 211b, the first inner inclined surface 213a and the second inner inclined surface 213b, and the first corner surface to the fourth corner surface 218a, 218b, 218c and 218d are described. However, the shapes of the fourth outer surface 211d and the fourth inner inclined surface 213d, which together with the first outer surface 211a and the first inner inclined surface 213a form the first corner 217a, are the same as the shapes of the first outer surface 211a and the first inner inclined surface 213a, and the shapes of the third outer surface 211c and the third inner inclined surface 213c are also the same as the shapes of the second outer surface 211b and the second inner inclined surface 213b.

[0151] Furthermore, in the optical cover window 200 according to an embodiment of the present disclosure, each of the inner oblique surfaces 213a, 213b, 213c, and 213d of the pyramidal pattern 210 of the lens layer 203 can be formed as having an outwardly convex curved surface, such as... Figure 6D As shown, or each of the outer surfaces 211a, 211b, 211c, and 211d, can be formed as having an outwardly convex curved surface, such as Figure 6E As shown in the image.

[0152] Therefore, when the outer surfaces 211a, 211b, 211c and 211d and / or the inner oblique surfaces 213a, 213b, 213c and 213d of the pyramidal pattern 210 form curved surfaces, the vertical and horizontal viewing angles can be further increased.

[0153] In addition, such as Figure 6F As shown, the center point angle 215, which corresponds to the center portion of the lower surface 212, can be formed to correspond to the micro-LED ( Figure 2 The first interval d may be spaced apart from or in close contact with the lower surface 212 depending on the range of arrangement error of the 130). The first interval d may be designed differently depending on the height h1 and h2 of the first corner surface 218a and the second corner surface 218b, as well as the inclination of the first corner surface to the fourth corner surface 218a, 218b, 218c and 218d.

[0154] In the micro LED display device according to embodiments of the present disclosure ( Figure 2 In the 100), the high-transparency optical cover window 200 corresponds to the display panel ( Figure 2 110) miniature LEDs Figure 2 The direction of light transmission emitted by the 130) is located on the display panel ( Figure 2 The front of (110) is protected, thus protecting the display panel ( Figure 2 (110) and ensured an aesthetically pleasing appearance without visual distortion.

[0155] Specifically, the lens layer 203 of the optical cover window 200 is formed with a pyramidal pattern 210, the pyramidal pattern 210 including micro-LEDs ( Figure 2 The arrangement error x or x' of 130 corresponds to the range of the inner inclined surfaces 213a, 213b, 213c, and 213d. Therefore, it is possible to prevent the arrangement error of micro-LEDs ( ) from being determined. Figure 2 The arrangement error x or x' of 130) of the micro LED display device ( Figure 2 It reduces the center brightness and viewing angle asymmetry of 100), and can also prevent a sharp decrease in brightness at a specific viewing angle.

[0156] Figures 7A to 7B These are simulation results used to explain the effects of this disclosure.

[0157] Here, Figure 7A The vertical (V) and horizontal (H) luminance distribution curves of a typical micro-LED display device without an optical cover are shown. Figure 7B Vertical (V) and horizontal (H) luminance distribution curves of a micro LED display device with an optical cover window according to an embodiment of the present disclosure are shown.

[0158] Vertical brightness refers to the brightness based on the vertical viewing angle of the micro-LED display device, while horizontal brightness refers to the brightness based on the horizontal viewing angle of the micro-LED display device.

[0159] Reference Figure 7A The curve shows that in a typical micro LED display device, the center brightness corresponding to region A is about 40% lower than the maximum brightness achieved at ±70°.

[0160] Furthermore, it can be seen that there is a difference in vertical brightness between region B and region C at a viewing angle of ±70° to achieve maximum brightness, and the difference in vertical brightness is approximately greater than or equal to 10°.

[0161] This means that it has a left-right asymmetrical structure, which breaks the symmetry of the viewing angle, and this asymmetry affects the viewing angle. In other words, the viewing angle of the micro LED display is narrowed.

[0162] In addition, the following problem exists: due to the generation of hot bands in region D, the brightness uniformity is reduced.

[0163] In the tropics, the phenomenon is as follows: within a constant half-maximum region, brightness is drastically reduced (darkening) or drastically increased (brightening), resulting in a clear separation between light and dark. Due to the tropics, light uniformity and display quality are reduced.

[0164] In typical micro LED display devices, it can be observed that a sharp decrease in brightness occurs at a viewing angle of 60° to 70°, thus generating a tropical effect.

[0165] In contrast, in the micro LED display device according to embodiments of the present disclosure ( Figure 2 In the 100), the optical cover window 200, including the pyramidal pattern 210, is located in the display panel ( Figure 2 (110) in front. Therefore, it can improve the center brightness, prevent the occurrence of viewing angle asymmetry, and also prevent the brightness from decreasing sharply at a specific viewing angle.

[0166] In other words, referencing Figure 7B It can be seen that the center brightness in region A' has improved. It can be seen that this center brightness is comparable to... Figure 7A The center brightness in region A was improved compared to other viewpoints, and the brightness was also improved compared to other viewpoints.

[0167] Center brightness can be defined as front brightness. When center brightness is improved, it can be determined that the overall brightness of the display device is improved, and thus the high-brightness display device that has been needed recently can be achieved.

[0168] Additionally, refer to Figure 7B It can be seen that the vertical and horizontal brightness of regions B' and C' are both uniform. Therefore, it can prevent the problem of viewing angle asymmetry caused by left-right asymmetrical structures and top-bottom asymmetrical structures.

[0169] Furthermore, it can be seen that no sharp decrease in brightness occurs at a viewing angle of 60° to 70° in the D' region, thus preventing tropical effects.

[0170] As described above, the micro LED display device according to embodiments of the present disclosure ( Figure 2 The feature of 100 is that the high-transparency optical cover window 200 corresponds to the display panel ( Figure 2 110) miniature LEDs Figure 2 The direction of light transmission emitted by the 130) is located on the display panel ( Figure 2 The optical cover 200 is located in front of the display panel (110). It has high transparency to protect the display panel (...). Figure 2 (110 in the middle) and ensure an aesthetically pleasing appearance without visual distortion.

[0171] Specifically, the lens layer 203 of the optical cover window 200 is formed with a pyramidal pattern 210, which includes a micro-LED ( Figure 2 The arrangement error x or x' of 130 corresponds to the range of the inner inclined surfaces 213a, 213b, 213c, and 213d. Therefore, it is possible to prevent the arrangement error of micro-LEDs ( ) from being determined. Figure 2 The arrangement error of 130) caused the micro LED display device ( Figure 2 It reduces the center brightness and viewing angle asymmetry of 100), and can also prevent a sharp decrease in brightness at a specific viewing angle.

[0172] Therefore, it is possible to provide a miniature LED display device with uniform effect.

[0173] Although the embodiments and effects of this disclosure have been described above with respect to LED display devices, they are not limited thereto, but can be similarly applied to general display devices, as long as the display device involves errors in the arrangement of light-emitting elements.

[0174] It will be apparent to those skilled in the art that various modifications and variations can be made to this invention without departing from the spirit or scope thereof. Therefore, this invention is intended to cover modifications and variations thereof, provided they fall within the scope of the appended claims and their equivalents.

Claims

1. A light-emitting diode display device, comprising: The display panel includes light-emitting diodes for each sub-pixel defined on the substrate; as well as An optical cover window, positioned to correspond to the transmission direction of light emitted from the display panel, includes multiple pyramidal patterns. Each of the plurality of pyramidal patterns includes an inner oblique surface corresponding to the arrangement error of the light-emitting diode. Each pyramidal pattern includes: a lower surface, and a first to a fourth outer surface extending from the lower surface toward the top of the pyramidal pattern. The inner inclined surface includes a first inner inclined surface to a fourth inner inclined surface, which are respectively connected to the first outer surface to the fourth outer surface to form a center point angle corresponding to the center portion of the lower surface.

2. The light-emitting diode display device according to claim 1, wherein, The arrangement error includes the average value of the positioning error in the repeated arrangement of the light-emitting diodes during the process of transferring the light-emitting diodes onto the substrate.

3. The light-emitting diode display device according to claim 1, wherein, The first inner inclined surface facing the first outer surface and the second inner inclined surface facing the second outer surface are located between the first outer surface and the second outer surface, and The third inner inclined surface facing the third outer surface and the fourth inner inclined surface facing the fourth outer surface are located between the third outer surface and the fourth outer surface.

4. The light-emitting diode display device according to claim 3, wherein, The first outer surface, the fourth outer surface, the first inner inclined surface, and the fourth inner inclined surface form a first angle. Wherein, the second outer surface, the third outer surface, the second inner inclined surface, and the third inner inclined surface form a second angle, and Wherein, the first angle and the second angle are located above the center point angle.

5. The light-emitting diode display device according to claim 4, wherein, The first corner surface formed by the aggregation of the first outer surface and the fourth outer surface, and the third corner surface formed by the aggregation of the first outer surface and the first inner oblique surface, are asymmetrical to each other by reflecting the arrangement error.

6. The light-emitting diode display device according to claim 5, wherein, The second outer surface and the third outer surface converge to form a second corner surface, and the second outer surface and the second inner oblique surface converge to form a fourth corner surface. The second corner surface and the fourth corner surface are asymmetrical to each other by reflecting the arrangement error.

7. The light-emitting diode display device according to claim 6, wherein, The first corner surface and the second corner surface are symmetrical to each other, and the third corner surface and the fourth corner surface are symmetrical to each other.

8. The light-emitting diode display device according to claim 7, wherein, The first angle and the second angle have the same height.

9. The light-emitting diode display device according to claim 6, wherein, The first corner surface and the second corner surface are asymmetrical to each other, and the third corner surface and the fourth corner surface are asymmetrical to each other.

10. The light-emitting diode display device according to claim 9, wherein, The first angle and the second angle have different heights.

11. The light-emitting diode display device according to claim 9, wherein, Along the length direction of the first corner surface, the arrangement error in the first direction is reduced on the third corner surface.

12. The light-emitting diode display device according to claim 11, wherein, Along the length direction of the first corner surface, the fourth corner surface is reduced in the arrangement error in a second direction opposite to the first direction.

13. The light-emitting diode display device according to claim 1, wherein, Each of the first to the fourth outer surfaces has an outwardly convex curved surface.

14. The light-emitting diode display device according to claim 4, wherein, Each of the first to the fourth inner oblique surfaces has an outwardly convex curved surface.

15. The light-emitting diode display device according to claim 1, wherein, The optical cover window has a thickness of 20 μm to 80 μm and a refractive index greater than or equal to 1.0 and less than or equal to 1.

54. The pyramidal pattern has a size of 25 μm to 50 μm.

16. The light-emitting diode display device according to claim 1, wherein, The light-emitting diode includes a first semiconductor layer, an n-type electrode located on one side of the first semiconductor layer, an active layer located on the first semiconductor layer, a second semiconductor layer located on the active layer, and a p-type electrode located on the second semiconductor layer. The p-type electrode is connected to a driving thin-film transistor located on the substrate.

17. A display device, comprising: The display panel includes multiple light-emitting elements; as well as A lens layer, which covers the display panel, includes multiple pyramidal lenses and is positioned in the direction of light transmission emitted from the display panel. Each of the plurality of pyramidal lenses includes an inner oblique surface corresponding to the arrangement error of the light-emitting element. Each pyramidal lens includes: a lower surface, and a first to a fourth outer surface extending from the lower surface toward the top of the pyramidal lens. The inner inclined surface includes a first inner inclined surface to a fourth inner inclined surface, which are respectively connected to the first outer surface to the fourth outer surface to form a center point angle corresponding to the center portion of the lower surface.

18. The display device as claimed in claim 17, wherein, Each of the pyramidal lenses overlaps only a portion of one of the plurality of light-emitting elements and occupies a smaller area than the corresponding light-emitting element.

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