High pulse power dc electronic switch and high pulse power bidirectional dc electronic switch
By uniformly arranging power electronic semiconductor components in high-power electronic switches and adopting a busbar design with equal length connections, the problem of uneven resistance between components is solved, thereby improving the current carrying capacity and current uniformity of the electronic switches.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SOUTHWESTERN INST OF PHYSICS
- Filing Date
- 2023-03-24
- Publication Date
- 2026-07-21
Smart Images
Figure CN116318099B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of electronic switch technology, and more specifically, to a high-pulse-power DC electronic switch and a high-pulse-power bidirectional DC electronic switch. Background Technology
[0002] High-power electronic switches (short-circuit switches or bypass switches) can instantly connect or disconnect circuits and can withstand high voltage, high current, and high power. They are widely used in modern, high-precision, and advanced large-scale scientific and technological systems such as controlled nuclear fusion, particle accelerators, and high-power lasers, and are one of the key pieces of equipment in these systems.
[0003] High-power electronic switches can be implemented using parallel connection of low-power electronic components. However, due to the different spatial distribution of these low-power electronic components, the resistance of each component in its corresponding circuit varies, which greatly reduces the current-sharing performance among the components and severely affects the current-carrying capacity of the electronic switch. Summary of the Invention
[0004] The purpose of this invention is to provide a high-pulse-power DC electronic switch and a high-pulse-power bidirectional DC electronic switch, comprising power electronic semiconductor elements, a first connecting busbar, and a first busbar and a second busbar arranged in parallel along a vertical direction, as well as a busbar and an element fixing busbar arranged in parallel along a horizontal direction. A plurality of power electronic semiconductor elements are uniformly arranged vertically on the element fixing busbar, and a plurality of first connecting busbars are uniformly arranged vertically on the busbar. The first connecting busbars on the busbar are correspondingly connected to the power electronic semiconductor elements on the element fixing busbars, with the upper end of the busbar connected to the first busbar and the lower end of the element fixing busbar connected to the second busbar, such that the lengths of all first connecting busbars are equal. When the high-pulse-power DC electronic switch is in operation, as the current flows from the first busbar to the second busbar, the equal-length first connecting busbars ensure that the current flows through the same path on each power electronic semiconductor element, thereby making the resistance in the corresponding circuit of each power electronic semiconductor element the same, thus improving the current sharing performance of each power electronic semiconductor element.
[0005] The above-mentioned technical objective of the present invention is achieved through the following technical solution:
[0006] A high-pulse-power DC electronic switch includes: power electronic semiconductor elements; a first busbar; a second busbar, the first busbar and the second busbar being arranged vertically; a busbar; and an element-fixing busbar; the busbar and the element-fixing busbar are arranged side by side in a horizontal direction; the upper end of the busbar is connected to the first busbar; the lower end of the element-fixing busbar is connected to the second busbar; a plurality of power electronic semiconductor elements are evenly arranged on the element-fixing busbar in a vertical direction; wherein, the high-pulse-power DC electronic switch further includes a first connecting busbar; a plurality of the first connecting busbars are evenly arranged on the busbar in a vertical direction, and the first connecting busbars on the busbar are correspondingly connected to the power electronic semiconductor elements on the element-fixing busbar, so that the lengths of each first connecting busbar are equal.
[0007] Furthermore, the power electronic semiconductor elements are symmetrically arranged on both sides of the element fixing busbar. This symmetrical arrangement reduces the difference in distributed parameters caused by the different positions of the power electronic semiconductor elements, thereby improving the current sharing performance of each power electronic semiconductor element and ultimately enhancing the current carrying capacity of the high-pulse power DC electronic switch.
[0008] Furthermore, component fixing busbars are provided on both sides of the busbar.
[0009] Furthermore, several of the aforementioned busbars are uniformly arranged along the extension direction of the first busbar. This structure aims to improve the current-carrying capacity of the high-pulse-power DC electronic switch. Simultaneously, it reduces the difference in distributed parameters caused by the different positions of the busbars, thereby further enhancing the current-carrying capacity of the high-pulse-power DC electronic switch.
[0010] Furthermore, each of the busbars is connected to the same position on the first busbar via a second connecting busbar; and the lengths of each second connecting busbar are the same. This structure aims to reduce the difference in distributed parameters caused by the different positions of the second connecting busbars, thereby improving the current-carrying capacity of the high-pulse-power DC electronic switch.
[0011] Furthermore, each of the aforementioned component's fixed busbars is connected to the same position on the second busbar via a third connecting busbar; and the lengths of each of the third connecting busbars are identical. This structure reduces the difference in distributed parameters caused by the different positions of the third connecting busbars, thereby improving the current-carrying capacity of the high-pulse-power DC electronic switch.
[0012] Furthermore, the first busbar extends in a direction perpendicular to the plane where the busbar and the component fixing busbar are located.
[0013] Furthermore, the component fixing busbars on each of the busbars are symmetrically distributed on both sides of the second busbar.
[0014] Furthermore, the first connecting busbar has a multi-layer aluminum foil structure.
[0015] A high-pulse-power bidirectional DC electronic switch includes two such high-pulse-power DC electronic switches. The power electronic semiconductor elements in each high-pulse-power DC electronic switch are unidirectionally conductive along a first busbar to a second busbar. The first busbar of one high-pulse-power DC electronic switch is connected to the second busbar of the other high-pulse-power DC electronic switch. Furthermore, the second busbar of one high-pulse-power DC electronic switch is connected to the second busbar of the other high-pulse-power DC electronic switch.
[0016] Compared with the prior art, the present invention has the following beneficial effects:
[0017] ① When the high-pulse power DC electronic switch is in operation, the current flows from the first busbar to the second busbar. The current flows through the same path on each power electronic semiconductor element, making the resistance in the corresponding circuit of each power electronic semiconductor element the same, thereby improving the current sharing performance of each power electronic semiconductor element.
[0018] ② Several power electronic semiconductor elements are evenly arranged vertically on a component fixing busbar, and each power electronic semiconductor element is connected to a busbar through a first connecting busbar. This forms a parallel structure among the power electronic semiconductor elements, thereby improving the current-carrying capacity of the high-pulse power DC electronic switch. Attached Figure Description
[0019] The accompanying drawings, which are included to provide a further understanding of embodiments of the invention and form part of this application, do not constitute a limitation thereof. In the drawings:
[0020] Figure 1 This is a schematic diagram of the main structure of a high-pulse-power DC electronic switch in Example 1;
[0021] Figure 2 This is a schematic diagram of the main structure of a high-pulse-power DC electronic switch in Example 2;
[0022] Figure 3 This is a schematic diagram of the main structure of a high-pulse-power DC electronic switch in Example 3;
[0023] Figure 4 This is a schematic diagram of the main structure of a high-pulse-power DC electronic switch in Embodiment 4 or Embodiment 5;
[0024] Figure 5 This is a schematic diagram of the main structure of a high-pulse-power DC electronic switch in Example 6;
[0025] Figure 6 This is a schematic diagram of the main structure of a high-pulse-power DC electronic switch in Embodiment 7 or Embodiment 8;
[0026] Figure 7 This is a schematic diagram of the main structure of a high-pulse-power bidirectional DC electronic switch in Example 10.
[0027] The attached diagram shows the markings and corresponding component names:
[0028] 1. Power electronic semiconductor components; 2. First busbar; 3. Second busbar; 4. Busbar; 5. Component mounting busbar; 6. First connecting busbar; 7. Second connecting busbar; 8. Third connecting busbar; Detailed Implementation
[0029] To make the objectives, technical solutions, and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the embodiments and accompanying drawings. The illustrative embodiments and descriptions of the present invention are only used to explain the present invention and are not intended to limit the present invention.
[0030] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly or indirectly attached to that other component. When a component is referred to as being "connected to" another component, it can be directly or indirectly connected to that other component.
[0031] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the present invention.
[0032] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.
[0033] Example 1
[0034] This embodiment provides a high-pulse-power DC electronic switch, such as... Figure 1 As shown, it includes a power electronic semiconductor element 1, a first connecting busbar 6, a first busbar 2, a second busbar 3, a busbar 4, and an element fixing busbar 5.
[0035] The first busbar 2 and the second busbar 3 are arranged side by side in a vertical direction, with the first busbar 2 located directly above the second busbar 3. The busbar 4 and the component fixing busbar 5 are arranged side by side in a horizontal direction. The upper end of the busbar 4 is connected to the first busbar 2, and the lower end of the component fixing busbar 5 is connected to the second busbar 3. A number of power electronic semiconductor components 1 are evenly arranged vertically on the component fixing busbar 5. A number of first connecting busbars 6 are evenly arranged vertically on the busbar 4. The number of first connecting busbars 6 is the same as the number of power electronic semiconductor components, and the end of each first connecting busbar 6 furthest from the busbar 4 is connected to the corresponding power electronic semiconductor component 1, so that the length of each first connecting busbar 6 between the busbar 4 and the fixing busbar 5 is equal. This structure ensures that when the high-pulse-power DC electronic switch is activated, the current flows along the same path through each power electronic semiconductor element as it moves from the first busbar to the second busbar. This results in identical resistance in the corresponding circuits of each power electronic semiconductor element, thereby improving the current-sharing performance of each element. Simultaneously, the parallel connection of these power electronic semiconductor elements further enhances the current-carrying capacity of the high-pulse-power DC electronic switch.
[0036] Example 2
[0037] In this embodiment, as Figure 2 As shown, the power electronic semiconductor elements 1 on the aforementioned component fixing busbar 5 are symmetrically arranged on both sides. Compared to installing power electronic board elements on one side of the component fixing busbar 5, installing the power electronic semiconductor elements 1 on both sides has the following advantages: Firstly, with a fixed length of the component fixing busbar 5, the side-mounting method allows for a greater number of power electronic semiconductor elements 1 on the component fixing busbar 5, thereby increasing the current-carrying capacity of the high-pulse power DC electronic switch. Secondly, with a fixed current-carrying capacity of the high-pulse power DC electronic switch, the side-mounting method can reduce the required length of the component fixing busbar 5, thereby reducing material costs and minimizing the size of the high-pulse power DC electronic switch. Simultaneously, the symmetrical arrangement on both sides can reduce the difference in distributed parameters caused by the different positions of the power electronic semiconductor elements 1, thereby improving the current-sharing performance of each power electronic semiconductor element 1 and further increasing the current-carrying capacity of the high-pulse power DC electronic switch.
[0038] Example 3
[0039] In this embodiment, as Figure 3As shown, component fixing busbars 5 are provided on both sides of the aforementioned busbar 4. Installing component fixing busbars 5 on both sides of the busbar 4, compared to installing them on only one side, has the following advantages: Firstly, with a fixed length of the busbar 4, the two-side installation method allows for a greater number of power electronic semiconductor components 1 on the busbar 4, thereby increasing the current-carrying capacity of the high-pulse-power DC electronic switch. Secondly, with a fixed current-carrying capacity of the high-pulse-power DC electronic switch, the two-side installation method reduces the required length of the busbar 4, thereby reducing material costs and minimizing the size of the high-pulse-power DC electronic switch.
[0040] Example 4
[0041] In this embodiment, as Figure 4 As shown, a number of busbars 4 are uniformly arranged on the first busbar 2 along its extension direction. The number of busbars 4 further increases the number of power electronic semiconductor elements 1 in the high-pulse-power DC electronic switch, thereby improving its current-carrying capacity. Simultaneously, the uniform arrangement of these busbars 4 on the first busbar 2 reduces the difference in distributed parameters caused by the different positions of the busbars 4, thus improving the current-sharing performance of each power electronic semiconductor element 1 and ultimately enhancing the current-carrying capacity of the high-pulse-power DC electronic switch.
[0042] Example 5
[0043] In this embodiment, as Figure 4 As shown, each busbar 4 is connected to the same position on the first busbar 2 via a second connecting busbar 7, which is called the first common connection point. Simultaneously, all the second connecting busbars 7 have the same length. Since a number of busbars 4 are arranged along the extension direction of the first busbar 2, the distances from each busbar 4 to the first common connection point are different. Therefore, the second connecting busbars 7 of equal length are configured into corresponding irregular structures according to space requirements. This structure reduces the difference in distributed parameters caused by the different positions of the second connecting busbars 7, thereby improving the current sharing performance of each power electronic semiconductor element 1 and ultimately enhancing the current-carrying capacity of the high-pulse-power DC electronic switch.
[0044] Example 6
[0045] In this embodiment, as Figure 5As shown, each component fixed busbar 5 is connected to the same position on the second busbar 3 via a third connecting busbar 8, which is called the second common connection point. Simultaneously, the lengths of all third connecting busbars 8 are the same. A number of component fixed busbars 5 are arranged along the extension direction of the first busbar 2, following the busbar 4, resulting in varying distances between the second common connection points of each component fixed busbar 5. Therefore, the third connecting busbars 8 of equal length are configured into corresponding irregular structures according to space requirements. This structure reduces the difference in distributed parameters caused by the different positions of the third connecting busbars 8, thereby improving the current sharing performance of each power electronic semiconductor component 1 and ultimately enhancing the current-carrying capacity of the high-pulse-power DC electronic switch.
[0046] Example 7
[0047] In this embodiment, as Figure 6 As shown, the extension direction of the first busbar 2 is perpendicular to the plane where the busbar 4 and the component fixing busbar 5 are located. This structure reduces the length of the first busbar 2, thereby reducing the overall length of the high-pulse-power DC electronic switch.
[0048] Example 8
[0049] In this embodiment, as Figure 6 As shown, the component fixing busbars 5 on each of the above-mentioned busbars 4 are symmetrically distributed on both sides of the second busbar 2. This structure reduces the variety of irregular structures of the third connecting busbar 8, facilitates installation, and reduces the difference in distribution parameters caused by the different positions of the second connecting busbars 7, thereby improving the current sharing performance of each power electronic semiconductor component 1 and thus improving the current carrying capacity of the high pulse power DC electronic switch.
[0050] Example 9
[0051] In this embodiment, the first connecting busbar 6 described above is a multi-layer aluminum foil structure. This structure allows the first connecting busbar 6 to be easily bent during installation.
[0052] Example 10
[0053] A high-pulse-power bidirectional DC electronic switch, such as Figure 4As shown, the system includes two high-pulse-power DC electronic switches. The power electronic semiconductor element 1 in each high-pulse-power DC electronic switch has unidirectional conduction capability and can be selected as a thyristor, insulated-gate bipolar transistor, or metal-oxide-semiconductor field-effect transistor. The current flow direction of each power electronic semiconductor element 1 in the high-pulse-power DC electronic switch is consistent, flowing from the first busbar 2 to the second busbar 3. The first busbar 2 of one high-pulse-power DC electronic switch is connected to the second busbar 3 of the other high-pulse-power DC electronic switch; the second busbar 3 of one high-pulse-power DC electronic switch is connected to the second busbar 3 of the other high-pulse-power DC electronic switch. This structure allows the two high-pulse-power DC electronic switches to handle the switching of DC current in different directions, achieving bidirectional DC current switching.
[0054] In the specific implementation process, the first busbar 2 of the two high pulse power DC electronic switches can be connected to each other, and the second busbar 3 can be connected to each other, so that the current flow direction of the power electronic semiconductor element 1 in the two high pulse power DC electronic switches is opposite, so that the two high pulse power DC electronic switches are responsible for the switching on and off of DC current in different directions, thereby achieving the purpose of bidirectional switching on and off of DC current.
[0055] Case Study:
[0056] The maximum current of the central solenoid power supply of the HL-2M converter unit in China reaches ±240kA. Therefore, an electronic switch with a current carrying capacity of not less than 240kA is designed.
[0057] Based on this, the high-pulse-power DC electronic switch incorporates three busbars 4 and six component-fixed busbars 5, each equipped with ten thyristors rated at 4kA. This allows the high-pulse-power DC electronic switch to handle a large current of 240kA. Furthermore, it enables the high-pulse-power bidirectional DC electronic switch to handle currents of ±240kA. Verification has shown that this structure can handle a maximum pulse current of 240kA with excellent current sharing. The current sharing of each busbar 4 and each power electronic semiconductor component 1 can both achieve 90%.
[0058] The specific embodiments described above further illustrate the purpose, technical solution, and beneficial effects of the present invention. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.
Claims
1. A high-pulse-power DC electronic switch, characterized in that, include: Power electronic semiconductor components (1); First mother row (2); The second busbar (3) is arranged vertically above the first busbar (2) and the second busbar (3); Busbar (4); Component fixing busbar (5); The busbar (4) and the component fixing busbar (5) are arranged side by side in the horizontal direction; the upper end of the busbar (4) is connected to the first busbar (2); the lower end of the component fixing busbar (5) is connected to the second busbar (3); a plurality of power electronic semiconductor components (1) are evenly arranged on the component fixing busbar (5) in the vertical direction. The high-pulse power DC electronic switch further includes a first connecting busbar (6); Several first connecting busbars (6) are evenly arranged on the busbar (4) in the vertical direction, and the first connecting busbars (6) on the busbar (4) are connected to the power electronic semiconductor elements (1) on the element fixing busbar (5) so that the length of each first connecting busbar (6) is equal.
2. The high-pulse-power DC electronic switch according to claim 1, characterized in that: The power electronic semiconductor element (1) is symmetrically arranged on both sides of the element fixing busbar (5).
3. The high-pulse-power DC electronic switch according to claim 2, characterized in that: Both sides of the busbar (4) are provided with component fixing busbars (5).
4. The high-pulse-power DC electronic switch according to claim 3, characterized in that: Several of the busbars (4) are evenly arranged along the extension direction of the first busbar (2).
5. The high-pulse-power DC electronic switch according to claim 4, characterized in that: Each of the busbars (4) is connected to the same position on the first busbar (2) via a second connecting busbar (7); And each of the second connecting busbars (7) has the same length.
6. The high-pulse-power DC electronic switch according to claim 5, characterized in that: Each of the element fixing busbars (5) is connected to the same position on the second busbar (3) via a third connecting busbar (8); Furthermore, the lengths of the third connecting busbars (8) are all the same.
7. The high-pulse-power DC electronic switch according to any one of claims 4-6, characterized in that: The first busbar (2) extends in a direction perpendicular to the plane where the busbar (4) and the component fixing busbar (5) are located.
8. The high-pulse-power DC electronic switch according to claim 7, characterized in that: The component fixing busbars (5) on each of the busbars (4) are symmetrically distributed on both sides of the second busbar (3).
9. The high-pulse-power DC electronic switch according to claim 1, characterized in that: The first connecting busbar (6) has a multi-layer aluminum foil structure.
10. A high-pulse-power bidirectional DC electronic switch, characterized in that, Including the high pulse power DC electronic switch as described in any one of claims 1-9, The number of high-pulse power DC electronic switches is set to two; The power electronic semiconductor elements (1) in the high pulse power DC electronic switch are all unidirectionally conductive in the direction from the first busbar (2) to the second busbar (3); Among them, the first busbar (2) of a high pulse power DC electronic switch is connected to the second busbar (3) of another high pulse power DC electronic switch; Furthermore, the second busbar (3) of one high-pulse-power DC electronic switch is connected to the second busbar (3) of the other high-pulse-power DC electronic switch.