A solar cell device, a preparation method therefor, and an application thereof

Abstract

This invention provides a solar cell device, its fabrication method, and its application. The solar cell device comprises an electron transport layer, a one-dimensional passivation layer, a perovskite absorber layer, a two-dimensional passivation layer, and a hole transport layer stacked sequentially. In this invention, the solar cell device employs a specific structure. By placing a one-dimensional passivation layer between the electron transport layer and the perovskite absorber layer, and a two-dimensional passivation layer between the hole transport layer and the perovskite absorber layer, the open-circuit voltage, short-circuit current, and fill factor of the solar cell device are improved. This, in turn, enhances the photoelectric conversion efficiency of the solar cell over a large area, making it more suitable for large-area coating processes and more conducive to commercialization.

Description

Technical Field

[0001] This invention belongs to the field of solar cell technology, specifically relating to a solar cell device, its fabrication method, and its application. Background Technology

[0002] Since Weber first introduced methylamine ions into a crystal structure in 1978, forming an organic-inorganic perovskite material with a three-dimensional structure, extensive research has been conducted on this ABX3-structured perovskite material. It has been found to possess many excellent properties, including a high absorption coefficient, long carrier diffusion length, and tunable bandgap. Therefore, this organic-inorganic hybrid perovskite material is very suitable as a light-absorbing layer for solar cells.

[0003] In 2009, researchers first achieved a photoelectric conversion efficiency (PCE) of 3.8% using CH3NH3PbI3 and CH3NH3PbBr3 as sensitizers in dye-sensitized solar cells. In just over a decade, the highest PCE of perovskite solar cells has reached 25.7%, approaching the highest efficiency of crystalline silicon solar cells. Perovskite solar cells are mainly divided into formal NIP structures and inverted PIN structures. However, the low PCE of both formal and inverted solar cells over large areas has been a significant factor restricting their development, especially for inverted solar cells. Since inverted perovskite solar cells are more suitable for the fabrication of tandem solar cells, they are more commercially viable. Therefore, improving the efficiency of large-area solar cells is a major concern.

[0004] CN113421979A discloses a vapor-phase passivation method for perovskite thin films and a photovoltaic device based thereon. The method includes the following steps: (1) preparing a PbI2 thin film as a precursor film; (2) reacting MAI powder and the PbI2 thin film in a tube furnace to generate a MAPbI3 perovskite thin film; (3) reacting tBBAI powder and the MAPbI3 thin film in a tube furnace to generate a passivation layer, thus obtaining the perovskite thin film. However, the photoelectric conversion efficiency of the solar cell reaches a maximum of 17.28%, which still needs further improvement.

[0005] CN114242900A discloses an inverted flexible perovskite solar cell and its fabrication method. The solar cell, from bottom to top, comprises: a flexible substrate, a conductive thin-film electrode layer, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, and a back electrode. The flexible substrate is made of polyimide (PI). By adjusting the structure of the inverted flexible perovskite solar cell, the stability of the solar cell can be improved. However, the conversion efficiency of the solar cell needs further improvement.

[0006] A common drawback of existing technologies is that, due to inherent defects in the perovskite absorber layer of perovskite solar cells and the coating process used for fabrication, defects easily arise at the perovskite interface. These defects lead to a large number of non-radiative recombinations in perovskite solar cells, resulting in low photoelectric conversion efficiency and making them unsuitable for large-area coating.

[0007] Therefore, developing a solar cell suitable for large-area coating processes and with high photoelectric conversion efficiency over a large area is an urgent problem to be solved in this field. Summary of the Invention

[0008] To address the shortcomings of existing technologies, the present invention aims to provide a solar cell device, its fabrication method, and its applications. The solar cell device, by setting a one-dimensional passivation layer between the electron transport layer and the perovskite absorber layer, and a two-dimensional passivation layer between the hole transport layer and the perovskite absorber layer, improves the open-circuit voltage, short-circuit current, and fill factor of the perovskite solar cell device. This, in turn, enhances the photoelectric conversion efficiency of the solar cell over a large area, making it more suitable for large-area coating processes and more conducive to commercialization.

[0009] To achieve this objective, the present invention adopts the following technical solution:

[0010] In a first aspect, the present invention provides a solar cell device comprising an electron transport layer, a one-dimensional passivation layer, a perovskite absorber layer, a two-dimensional passivation layer, and a hole transport layer stacked sequentially.

[0011] In this invention, the solar cell device improves the fill factor, short-circuit current, and open-circuit voltage of the perovskite solar cell by setting a one-dimensional passivation layer between the electron transport layer and the perovskite absorber layer, i.e., using a one-dimensional material to passivate the interface defects between the electron transport layer and the perovskite absorber layer; and by setting a two-dimensional passivation layer between the hole transport layer and the perovskite absorber layer, i.e. using a two-dimensional material to passivate the interface defects between the hole transport layer and the perovskite absorber layer. After passivation treatment, it is more conducive to the hole extraction ability of the hole transport layer. By performing double passivation treatment on the upper and lower interfaces of the perovskite absorber layer, defects on the perovskite surface are reduced, thereby improving the hole transport ability between the interface of the perovskite absorber layer and the hole transport layer, as well as the electron extraction ability between the interface of the perovskite absorber layer and the electron transport layer. This reduces the formation of non-radiative recombination, improves the photoelectric conversion efficiency of the inverted perovskite solar cell device, and makes it more suitable for large-area coating processes.

[0012] Preferably, the material of the one-dimensional passivation layer includes at least one of 1-ethyl-3-methylimidazolium trifluoroacetate, alkylbenzimidazole iodide, benzimidazole amine salt, or 2-chlorotriethylamine cationic compound.

[0013] Preferably, the alkylbenzimidazole iodide has the following structure:

[0014]

[0015] R1 and R2 are each independently selected from substituted or unsubstituted C1-C6 straight-chain or branched alkyl groups; the substituents include any one of halogen, hydroxyl, carboxyl or amino groups.

[0016] In this invention, the combination of C and number in the C1-C6 straight-chain or branched alkyl group refers to the number of carbon atoms in the alkyl chain. For example, C1 represents methyl, C2 represents ethyl, C3 represents n-propyl or isopropyl, C4 represents butyl, C5 represents pentyl, and C6 represents hexyl, etc.

[0017] In this invention, the carbon chain of the alkylbenzimidazole iodide cannot be too long, that is, the number of carbon atoms cannot be too many. If it exceeds 6, it will cause severe deformation of the one-dimensional passivation layer structure, which is not conducive to surface passivation.

[0018] Preferably, the alkylbenzimidazole iodide includes at least one of N,N-dimethylbenzimidazole iodide, N,N-diethylbenzimidazole iodide, N,N-diisopropylbenzimidazole iodide, N,N-dibutylbenzimidazole iodide or N,N-dihexylbenzimidazole iodide.

[0019] Preferably, the material of the two-dimensional passivation layer includes aromatic amine compounds and / or alkylamine compounds.

[0020] Preferably, the aromatic amine compound includes at least one of phenylethyl iodide (PEAI), m-fluorophenylethyl iodide (mF-PEAI), phenylethyl ammonium chloride (PEACl), o-fluorophenylethyl iodide, p-fluorophenylethyl iodide, trifluorophenylethyl iodide, anthracene-9-ylmethylammonium, or 2-(pyridin-4-yl)ethane-1-ammonium.

[0021] Preferably, when the material of the two-dimensional passivation layer is an aromatic amine compound, the material of the two-dimensional passivation layer also includes short-chain aliphatic amine compounds.

[0022] Preferably, the short-chain aliphatic amine compound has ≤2 carbon atoms, for example, 1 or 2.

[0023] Preferably, the short-chain aliphatic amine compound includes methylamine iodide (MAI) and / or formamidinium hydroiodate (FAI).

[0024] Preferably, the mass ratio of aromatic amine compounds to short-chain aliphatic amine compounds in the material of the two-dimensional passivation layer is (1.5 to 2.5):1, for example, it can be 1.5:1, 1.6:1, 1.7:1, 1.8:1, 1.9:1, 2:1, 2.1:1, 2.2:1, 2.3:1, 2.4:1, 2.5:1, etc.

[0025] Preferably, the molecular formula of the alkylamine compound is RNH3I: R is selected from any one of substituted or unsubstituted C8-C30 straight-chain or branched alkyl, substituted or unsubstituted C8-C30 straight-chain or branched alkenyl, or substituted or unsubstituted C8-C30 straight-chain or branched alkynyl; the substituted substituents include any one of halogen, hydroxyl, carboxyl, or amino.

[0026] In this invention, the combination of C and numbers in the C8-C30 straight-chain or branched alkyl groups, i.e., C8-C30 represents the number of carbon atoms in the alkyl chain, exemplarily C8 represents octyl, C9 represents nonyl, C10 represents decyl, C11 represents undecyl, C12 represents dodecyl, C13 represents tridecyl, C14 represents tetradecyl, C15 represents pentadecyl, C16 represents hexadecyl, C17 represents heptadecanyl, C18 represents octadecyl, C19 represents nonadecanyl, C20 represents eicosyl, C21 represents dodecyl, C22 represents dodecyl, C23 represents tridecyl, C24 represents tetradecyl, C25 represents pentadecyl, C26 represents hexadecyl, C27 represents heptadecanyl, C28 represents octadecyl, C29 represents nonadecanyl, and C30 represents triacontyl.

[0027] In this invention, the combination of C and numbers in the C8-C30 straight-chain or branched alkenyl groups, i.e., C8-C30 represents the number of carbon atoms in the alkenyl chain, exemplarily C8 represents octenyl, C9 represents nonenyl, C10 represents decenyl, C11 represents undecenyl, C12 represents dodecenyl, C13 represents tridecenyl, C14 represents tetradecenyl, C15 represents pentadecenyl, C16 represents hexadecenyl, C17 represents heptadecenyl, C18 represents octadecenyl, C19 represents nonadecanenyl, C20 represents eicosene, C21 represents dodecenyl, C22 represents dodecenyl, C23 represents dodecenyl, C24 represents dodecenyl, C25 represents dodecenyl, C26 represents dodecenyl, C27 represents heptadecenyl, C28 represents octadecenyl, C29 represents nonadecanenyl, and C30 represents triacontenyl.

[0028] In this invention, the combination of C and numbers in the C8-C30 straight-chain or branched alkynyl groups, i.e., C8-C30, represents the number of carbon atoms in the alkynyl chain. For example, C8 represents octyryl, C9 represents nonynyl, C10 represents decanynyl, C11 represents undecynyl, C12 represents dodecaynyl, C13 represents tridecynyl, C14 represents tetradecynyl, C15 represents pentadecynyl, C16 represents hexadecynyl, C17 represents heptadecaynyl, C18 represents octadecynyl, C19 represents nonadecaynyl, C20 represents eicosynyl, C21 represents hemocosynyl, C22 represents hemocosynyl, C23 represents hemocosynyl, C24 represents hemocosynyl, C25 represents pentadecynyl, C26 represents hemocosynyl, C27 represents hemocosynyl, C28 represents hemocosynyl, C29 represents hemocosynyl, and C30 represents triadecynyl.

[0029] In this invention, when the material of the two-dimensional passivation layer is an alkylamine compound, the number of carbon atoms is less than 8, which is not conducive to the formation of a two-dimensional passivation layer.

[0030] Preferably, the alkylamine compound includes at least one of octyl iodide (OAI), nonyl iodide, and oleyl iodide (oAmI).

[0031] Preferably, the electron transport layer comprises a fullerene layer and a 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline layer stacked sequentially, wherein the fullerene layer is stacked with a one-dimensional passivation layer.

[0032] Preferably, the precursor material of the perovskite absorber layer includes Cs. 0.15 FA 0.85 PbI3.

[0033] Preferably, the material of the hole transport layer includes nickel oxide.

[0034] In this invention, the solar cell device further includes a first electrode and a second electrode; the first electrode is disposed on the side of the electron transport layer away from the one-dimensional passivation layer, and the second electrode is disposed on the side of the hole transport layer away from the two-dimensional passivation layer. The solar cell device is an inverted solar cell, and the first electrode includes a metal electrode; the second electrode includes FTO conductive glass. Alternatively, the solar cell device can be a conventional solar cell, where the first electrode includes FTO conductive glass and the second electrode includes a metal electrode.

[0035] In a second aspect, the present invention provides a method for fabricating a solar cell device according to the first aspect, the method comprising:

[0036] The solar cell device is obtained by sequentially depositing a one-dimensional passivation layer, a perovskite absorber layer, a two-dimensional passivation layer, and a hole transport layer on the surface of the electron transport layer; or, the solar cell device is obtained by sequentially depositing a two-dimensional passivation layer, a perovskite absorber layer, a one-dimensional passivation layer, and an electron transport layer on the surface of the hole transport layer.

[0037] Preferably, the method for obtaining the one-dimensional passivation layer includes:

[0038] A one-dimensional material is deposited on one surface of the electron transport layer or perovskite absorber layer and then annealed to obtain the one-dimensional passivation layer.

[0039] Preferably, the concentration of the one-dimensional material is 0.5 to 1.5 mg / mL, for example, it can be 0.5 mg / mL, 0.6 mg / mL, 0.7 mg / mL, 0.8 mg / mL, 0.9 mg / mL, 1 mg / mL, 1.1 mg / mL, 1.2 mg / mL, 1.3 mg / mL, 1.4 mg / mL, 1.5 mg / mL, etc.

[0040] In the preparation method of the present invention, the volume of the one-dimensional material is 20-50 μL, for example, it can be 20 μL, 22 μL, 25 μL, 28 μL, 30 μL, 32 μL, 35 μL, 38 μL, 40 μL, 42 μL, 45 μL, 48 μL, 50 μL, etc.

[0041] Preferably, the annealing temperature is 70-100℃, for example, 70℃, 75℃, 80℃, 85℃, 90℃, 95℃, 100℃, etc., and the annealing time is 5-10min, for example, 5min, 6min, 7min, 8min, 9min, 10min, etc.

[0042] Preferably, the method for obtaining the two-dimensional passivation layer includes:

[0043] A two-dimensional material is deposited on one surface of the perovskite absorber layer or hole transport layer, and then annealed to obtain the two-dimensional passivation layer.

[0044] Preferably, the concentration of the two-dimensional material is 1 to 3 mg / mL, for example, it can be 1 mg / mL, 1.2 mg / mL, 1.4 mg / mL, 1.6 mg / mL, 1.8 mg / mL, 2 mg / mL, 2.2 mg / mL, 2.4 mg / mL, 2.6 mg / mL, 2.8 mg / mL, 3 mg / mL, etc.

[0045] In the preparation method of the present invention, the volume of the two-dimensional material is 20 to 50 μL, for example, it can be 20 μL, 22 μL, 25 μL, 28 μL, 30 μL, 32 μL, 35 μL, 38 μL, 40 μL, 42 μL, 45 μL, 48 μL, 50 μL, etc.

[0046] Preferably, the annealing temperature is 70-120℃, for example, 70℃, 75℃, 80℃, 85℃, 90℃, 95℃, 100℃, 110℃, 115℃, 120℃, etc.; the annealing time is 1-10min, for example, 1min, 2min, 3min, 4min, 5min, 6min, 7min, 8min, 9min, 10min, etc.

[0047] In the preparation method of this invention, the methods for depositing the one-dimensional and two-dimensional materials are not limited, and each can independently include, but is not limited to, coating, vapor deposition, etc. When coating is selected as the deposition method, the speed is 3 to 10 mm / s, for example, it can be 3 mm / s, 4 mm / s, 5 mm / s, 6 mm / s, 7 mm / s, 8 mm / s, 9 mm / s, 10 mm / s, etc.

[0048] The preparation method of the present invention includes obtaining the perovskite absorber layer by: depositing a perovskite precursor material on the surface of a one-dimensional passivation layer or a two-dimensional passivation layer, and annealing it to obtain the perovskite absorber layer.

[0049] In the preparation method of this invention, the method of depositing the perovskite precursor material is not limited, and includes, but is not limited to, coating, vapor deposition, etc. When coating is selected as the deposition method, the coating speed is 10-15 mm / s, for example, 10 mm / s, 11 mm / s, 12 mm / s, 13 mm / s, 14 mm / s, 15 mm / s, etc.

[0050] Preferably, the concentration of the perovskite precursor material is 0.9–1.2 mol / L, for example, 0.9 mol / L, 0.95 mol / L, 1 mol / L, 1.05 mol / L, 1.1 mol / L, 1.15 mol / L, 1.2 mol / L, etc.; and the volume is 30–50 μL, for example, 30 μL, 32 μL, 35 μL, 38 μL, 40 μL, 42 μL, 45 μL, 48 μL, 50 μL, etc.

[0051] Preferably, a perovskite absorber layer is obtained, wherein the annealing includes the steps of a first annealing and a second annealing.

[0052] Preferably, the temperature of the first annealing is 60-80℃, for example, it can be 60℃, 62℃, 64℃, 66℃, 68℃, 70℃, 72℃, 74℃, 76℃, 78℃, 80℃, etc., and the time of the first annealing is 1-10min, for example, it can be 1, 1.5min, 2min, 2.5min, 3min, 3.5min, 4min, 4.5min, 5min, 5.5min, 6min, 6.5min, 7min, 7.5min, 8min, 8.5min, 9min, 9.5min, 10min, etc.

[0053] Preferably, the temperature of the second annealing is 100-120°C, for example, 100°C, 105°C, 110°C, 115°C, 120°C, etc., and the time of the second annealing is 30-50 minutes, for example, 30 minutes, 32 minutes, 35 minutes, 38 minutes, 40 minutes, 42 minutes, 45 minutes, 48 ​​minutes, 50 minutes, etc.

[0054] Taking an inverted solar cell as an example, the first electrode is a metal electrode and the second electrode is FTO conductive glass; the method for obtaining the hole transport layer includes: depositing nickel oxide on one surface of the second electrode to obtain the hole transport layer.

[0055] In this invention, a hole transport layer is obtained, and the second electrode is further cleaned before deposition; the cleaning includes sequentially cleaning with glass cleaner for 20-40 minutes, ultrasonically cleaning with deionized water for 20-40 minutes, and then drying with nitrogen gas to obtain the second electrode.

[0056] Preferably, a hole transport layer is obtained, and the deposition method includes, but is not limited to, magnetron sputtering.

[0057] Preferably, the thickness of the hole transport layer is 10-20 nm, for example, it can be 10 nm, 12 nm, 14 nm, 16 nm, 18 nm, 20 nm, etc.

[0058] Taking a reverse solar cell as an example, the first electrode is a metal electrode and the second electrode is FTO conductive glass; the method for obtaining the electron transport layer includes: sequentially depositing fullerene and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline on the surface of a one-dimensional passivation layer to obtain a sequentially stacked fullerene layer and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, which is the electron transport layer.

[0059] Preferably, an electron transport layer is obtained, and the deposition method includes, but is not limited to, vapor deposition.

[0060] Preferably, the thickness of the fullerene layer is 20-30 nm, for example, 20 nm, 22 nm, 24 nm, 25 nm, 26 nm, 28 nm, 30 nm, etc.; the thickness of the 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline layer is 2-8 nm, for example, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, etc.

[0061] Taking an inverted solar cell as an example, the fabrication method further includes depositing metal on the surface of the electron transport layer to obtain a second electrode.

[0062] Preferably, a second electrode is obtained, and the deposition method includes, but is not limited to, vacuum evaporation.

[0063] Preferably, the thickness of the deposited metal is 70-90 nm, for example, it can be 70 nm, 72 nm, 75 nm, 78 nm, 80 nm, 82 nm, 85 nm, 88 nm, 90 nm, etc.

[0064] Taking an inverted solar cell as an example, the preparation method of the present invention includes the following steps:

[0065] (1) Nickel oxide is deposited on one surface of the second electrode to obtain a hole transport layer with a thickness of 10-20 nm;

[0066] (2) After the hole transport layer obtained in step (1) is coated with a two-dimensional material at a speed of 3 to 10 mm / s, it is annealed at 70 to 120°C to obtain a two-dimensional passivation layer; the concentration of the two-dimensional material is 1 to 3 mg / mL and the volume is 20 to 50 μL.

[0067] (3) The perovskite precursor material is scraped onto the surface of the two-dimensional passivation layer obtained in step (2) at a speed of 10-15 mm / s, and then annealed at 60-80℃ for 1-10 min and at 100-120℃ for 30-50 min to obtain the perovskite absorption layer; the concentration of the perovskite precursor material is 0.9-1.2 mol / L and the volume is 30-50 μL;

[0068] (4) After the surface of the perovskite absorber layer obtained in step (3) is coated with a one-dimensional material at a speed of 3 to 10 mm / s, it is annealed at 70 to 100°C for 5 to 10 min to obtain a one-dimensional passivation layer; the concentration of the one-dimensional material is 0.5 to 1.5 mg / mL and the volume is 20 to 50 μL.

[0069] (5) A fullerene layer with a thickness of 20-30 nm and a 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline layer with a thickness of 2-8 nm are sequentially deposited on the surface of the one-dimensional passivation layer obtained in step (4) to obtain an electron transport layer.

[0070] (6) A metal with a thickness of 70-90 nm is deposited on the surface of the electron transport layer obtained in step (5) to obtain the inverted solar cell device.

[0071] In the preparation method provided by the present invention, the one-dimensional material and the two-dimensional material exist in solution form, and their solvents are independently including but not limited to isopropanol.

[0072] Thirdly, the present invention provides an electronic device comprising a solar cell device as described in the first aspect.

[0073] The numerical range described in this invention includes not only the point values ​​listed above, but also any point values ​​within the numerical ranges not listed above. Due to space limitations and for the sake of brevity, this invention will not exhaustively list all the specific point values ​​included in the range.

[0074] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0075] The solar cell device provided by this invention, by setting a one-dimensional passivation layer between the electron transport layer and the perovskite absorber layer, passesivates the interface defects between the electron transport layer and the perovskite absorber layer. Compared with a two-dimensional passivation layer, this is more conducive to electron transport, thereby improving the fill factor, short-circuit current, and open-circuit voltage of the perovskite solar cell. By setting a two-dimensional passivation layer between the hole transport layer and the perovskite absorber layer, it passesivates the interface defects between the hole transport layer and the perovskite absorber layer. Compared with a one-dimensional passivation layer, this is more conducive to the hole extraction ability of the hole transport layer, passesivates defects, and blocks moisture. By performing double passivation treatment on the upper and lower interfaces of the perovskite absorber layer, defects on the perovskite surface are reduced, improving the photoelectric conversion efficiency of the solar cell device and making it more suitable for large-area coating processes. The solar cell device can still achieve a photoelectric conversion efficiency of ≥18.05% with an area of ​​20cm×20cm. Attached Figure Description

[0076] Figure 1 This is a schematic diagram of the structure of the perovskite solar cell device provided by the present invention;

[0077] Wherein, 1-first electrode, 2-electron transport layer, 3-one-dimensional passivation layer, 4-perovskite absorption layer, 5-two-dimensional passivation layer, 6-hole transport layer, 7-second electrode. Detailed Implementation

[0078] The technical solution of the present invention will be further illustrated below through specific embodiments. Those skilled in the art should understand that the embodiments described are merely illustrative of the present invention and should not be construed as limiting the invention in any way.

[0079] Example 1

[0080] This embodiment provides a solar cell device, the structure of which is as follows: Figure 1 As shown, it includes a copper electrode 1 and an electron transport layer 2 (made of fullerene C) stacked sequentially. 60 And 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), one-dimensional passivation layer 3 (material is 1-ethyl-3-methylimidazolium trifluoroacetate), perovskite absorber layer 4 (material is Cs 0.15 FA 0.85 PbI3), two-dimensional passivation layer 5 (materials are mF-PEAI and MAI with a mass ratio of 2:1), hole transport layer 6 (material is nickel oxide) and FTO conductive glass 7.

[0081] This embodiment provides a method for fabricating the solar cell device, specifically including the following steps:

[0082] (1) The FTO conductive glass was cleaned with glass cleaner for 30 min and ultrasonically cleaned with deionized water for 30 min, and then dried with nitrogen to obtain FTO conductive glass.

[0083] (2) A layer of nickel oxide is deposited on one surface of the FTO conductive glass obtained in step (1) using a magnetron sputtering device to obtain a hole transport layer with a thickness of 15 nm.

[0084] (3) Weigh 2mg mF-PEAI and 1mg MAI and dissolve them in 1mL isopropanol to obtain a two-dimensional material solution; take 20μL of the two-dimensional material solution and use a scraper to coat the hole transport layer obtained in step (2) at a scraping speed of 5mm / s, and then perform annealing treatment at 100℃ to obtain a two-dimensional passivation layer.

[0085] (4) Apply 34 μL of Cs to the surface of the two-dimensional passivation layer obtained in step (3). 0.15 FA 0.85 The perovskite precursor solution of PbI3 (concentration of 1M) was scraped at a speed of 11.5 mm / s, and then excess solvent was blown away with nitrogen. The solution was first annealed at 70°C for 2 min on a heating stage, and then annealed at 120°C for 40 min to obtain the perovskite absorber layer.

[0086] (5) Weigh 1 mg of 1-ethyl-3-methylimidazolium trifluoroacetate and dissolve it in 1 mL of isopropanol to obtain a one-dimensional material solution; take 20 μL of the one-dimensional material solution and use a scraper to coat the surface of the perovskite absorption layer obtained in step (4) at a scraping speed of 5 mm / s. After removing excess solvent by vacuum, anneal the substrate at 100 °C for 10 min to obtain a one-dimensional passivation layer.

[0087] (6) Fullerene C is sequentially vapor-deposited onto the surface of the one-dimensional passivation layer obtained in step (5). 60With 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), a fullerene layer with a thickness of 25 nm and a 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline layer with a thickness of 5 nm were obtained, thus forming an electron transport layer;

[0088] (7) The electron transport layer surface obtained in step (6) is coated with Cu with a thickness of 80 nm by vacuum evaporation to obtain the solar cell device.

[0089] Example 2

[0090] This embodiment provides a solar cell device, which differs from Embodiment 1 only in that the mF-PEAI in the two-dimensional passivation layer is replaced with an equal mass of PEAI. The other materials, amounts, and preparation methods are the same as in Embodiment 1.

[0091] Example 3

[0092] This embodiment provides a solar cell device, which differs from Embodiment 1 only in that the mF-PEAI material in the two-dimensional passivation layer is replaced with an equal mass of PEACl. The other materials, amounts, and preparation methods are the same as in Embodiment 1.

[0093] Example 4

[0094] This embodiment provides a solar cell device, which differs from Embodiment 1 only in that MAI in the two-dimensional passivation layer is replaced with an equal mass of FAI, while the other materials, amounts, and preparation methods are the same as in Embodiment 1.

[0095] Example 5

[0096] This embodiment provides a solar cell device, which differs from Embodiment 1 only in that the material of the two-dimensional passivation layer includes PEAI and FAI in a mass ratio of 2:1. The other materials, amounts, and preparation methods are the same as in Embodiment 1.

[0097] Example 6

[0098] This embodiment provides a solar cell device, which differs from Embodiment 1 only in that the material of the two-dimensional passivation layer includes PEACl and FAI in a mass ratio of 2:1. The other materials, amounts, and preparation methods are the same as in Embodiment 1.

[0099] Example 7

[0100] This embodiment provides a solar cell device, which differs from Embodiment 1 only in that the material of the one-dimensional passivation layer is N,N-dimethylbenzimidazole iodide, and the material of the two-dimensional passivation layer is OAI. In the preparation method, step (3) weighs 1 mg of OAI and dissolves it in 1 mL of isopropanol to obtain a two-dimensional material solution. Other materials, dosages and preparation methods are the same as in Embodiment 1.

[0101] Example 8

[0102] This embodiment provides a solar cell device, which differs from Embodiment 1 only in that the material of the one-dimensional passivation layer is N,N-dimethylbenzimidazole iodide, and the material of the two-dimensional passivation layer is oAmI. In the preparation method, step (3) weighs 1 mg of oAmI and dissolves it in 1 mL of isopropanol to obtain a two-dimensional material solution. Other materials, amounts and preparation methods are the same as in Embodiment 1.

[0103] Example 9

[0104] This embodiment provides a solar cell device, which differs from Embodiment 1 only in that the total amount of material in the two-dimensional passivation layer remains unchanged, and there is no MAI. The other materials, amounts, and preparation methods are the same as in Embodiment 1.

[0105] Example 10

[0106] This embodiment provides a solar cell device, which differs from Embodiment 1 only in that the material of the one-dimensional passivation layer, 1-ethyl-3-methylimidazolium trifluoroacetate, is replaced with p-aminobenzenesulfonic acid. All other materials, amounts, and preparation methods are the same as in Embodiment 1.

[0107] Example 11

[0108] This embodiment provides a solar cell device, which differs from Embodiment 1 only in that, in the preparation method, the concentration of the two-dimensional material solution in step (3) is 4 mg / mL, the mass ratio of mF-PEAI and MAI remains unchanged, the concentration of the one-dimensional material solution in step (5) is 0.4 mg / mL, and the other materials, amounts and process parameters are the same as in Embodiment 1.

[0109] Example 12

[0110] This embodiment provides a solar cell device, which differs from Embodiment 1 only in that, in the preparation method, the concentration of the two-dimensional material solution in step (3) is 0.5 mg / mL, the mass ratio of mF-PEAI and MAI remains unchanged, the concentration of the one-dimensional material solution in step (5) is 2 mg / mL, and the other materials, dosages and process parameters are the same as in Embodiment 1.

[0111] Comparative Example 1

[0112] This comparative example provides a solar cell device, which differs from Example 1 only in that the solar cell device does not have a two-dimensional passivation layer, and the preparation method does not include step (3). The other materials, amounts, and preparation methods are the same as in Example 1.

[0113] Comparative Example 2

[0114] This comparative example provides a solar cell device, which differs from Example 1 only in that the solar cell device does not have a one-dimensional passivation layer, and the preparation method does not include step (5). The other materials, amounts, and preparation methods are the same as in Example 1.

[0115] Comparative Example 3

[0116] This comparative example provides a solar cell device, which differs from Example 1 only in that the two-dimensional passivation layer in the solar cell device is replaced with a one-dimensional passivation layer. In the preparation method, in step (3), 1 mg of 1-ethyl-3-methylimidazolium trifluoroacetate is weighed and dissolved in 1 mL of isopropanol to obtain a one-dimensional material solution. Other materials, amounts and preparation methods are the same as in Example 1.

[0117] Comparative Example 4

[0118] This comparative example provides a solar cell device, which differs from Example 1 only in that the one-dimensional passivation layer in the solar cell device is replaced with a two-dimensional passivation layer. In the preparation method, in step (5), 2 mg mF-PEAI and 1 mg MAI are weighed and dissolved in 1 mL isopropanol to obtain a two-dimensional material solution. Other materials, dosages and preparation methods are the same as in Example 1.

[0119] Comparative Example 5

[0120] This comparative example provides a solar cell device, which differs from Example 1 only in that the positions of the one-dimensional passivation layer and the two-dimensional passivation layer are interchanged, and the order of steps (3) and (5) in the preparation method is changed. Other materials, amounts and process parameters are the same as in Example 1.

[0121] Comparative Example 6

[0122] This comparative example provides a perovskite solar cell, which differs from Example 1 only in that the reverse solar cell device does not have a one-dimensional passivation layer and a two-dimensional passivation layer, and the preparation method does not include steps (3) and (5). Other materials, amounts, and preparation methods are the same as in Example 1.

[0123] Test conditions

[0124] The perovskite solar cells provided in the examples and comparative examples were subjected to performance testing, and the testing methods are as follows:

[0125] Photovoltaic conversion efficiency test: A standard sunlight beam (spectral AM 1.5G, incident power 100mW / cm²) was emitted using a solar simulator. 2 The open-circuit voltage, short-circuit current and fill factor were measured on the perovskite device at a temperature of 25℃.

[0126] Photoelectric conversion efficiency = open circuit voltage × short circuit current × fill factor, with an area of ​​20cm × 20cm.

[0127] The specific test results are shown in Table 1:

[0128] Table 1

[0129]

[0130]

[0131] As shown in the table above, the solar cell device provided by this invention improves the fill factor, short-circuit current, and open-circuit voltage of the perovskite solar cell by setting a one-dimensional passivation layer between the electron transport layer and the perovskite absorber layer to passivate the interface defects between the electron transport layer and the perovskite absorber layer. Similarly, setting a two-dimensional passivation layer between the hole transport layer and the perovskite absorber layer to passivate the interface defects between the hole transport layer and the perovskite absorber layer improves the hole extraction capability of the hole transport layer. By performing double passivation treatment on the upper and lower interfaces of the perovskite absorber layer, the photoelectric conversion efficiency of the perovskite solar cell device over a large area is improved. As shown in Examples 1-8, the short-circuit current of the perovskite solar cell device is 23.22-24.45 mA / cm². 2 The fill factor is 71.69–78.06%, and the photoelectric conversion efficiency is 18.05–19.48% under the condition of an area of ​​20cm×20cm.

[0132] As can be seen from Examples 1 and 9 and 10, the materials of the one-dimensional passivation layer or the two-dimensional passivation layer are not the types or combinations limited by the present invention, resulting in a decrease in short-circuit current and a deterioration in photoelectric conversion efficiency; as can be seen from Examples 1 and 11 and 12, the material concentration of the one-dimensional passivation layer or the two-dimensional passivation layer is not within a specific range, resulting in a deterioration in photoelectric conversion efficiency.

[0133] As can be seen from the comparison between Example 1 and Comparative Examples 1 to 6, the solar cell device described is not the structure defined in this invention, and the battery performance deteriorates.

[0134] In summary, the solar cell device provided by this invention, by using one-dimensional and two-dimensional materials to passivate the interface between the electron transport layer and the perovskite absorber layer, and the interface between the hole transport layer and the perovskite absorber layer, respectively, is beneficial to improving the photoelectric conversion efficiency of the solar cell, making it more suitable for large-area coating processes, and more conducive to commercialization.

[0135] The applicant declares that the above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention fall within the protection and disclosure scope of the present invention.

Claims

1. A solar cell device, characterized in that, The solar cell device comprises an electron transport layer, a one-dimensional passivation layer, a perovskite absorber layer, a two-dimensional passivation layer, and a hole transport layer stacked sequentially. The material of the one-dimensional passivation layer includes at least one of 1-ethyl-3-methylimidazolium trifluoroacetate, alkylbenzimidazole iodide, benzimidazole amine salt or 2-chlorotriethylamine cationic compound; The material of the two-dimensional passivation layer includes aromatic amine compounds and / or alkylamine compounds; When the material of the two-dimensional passivation layer is an aromatic amine compound, the material of the two-dimensional passivation layer may also include short-chain aliphatic amine compounds. The short-chain aliphatic amine compounds have ≤2 carbon atoms; The short-chain aliphatic amine compounds include methylamine iodide and / or formamidinium hydroiodide; The concentration of the material in the one-dimensional passivation layer is 0.5~1.5 mg / mL; The concentration of the material in the two-dimensional passivation layer is 1~3 mg / mL.

2. The solar cell device according to claim 1, characterized in that, The alkylbenzimidazole iodide has the following structure: ； R1 and R2 are each independently selected from substituted or unsubstituted C1~C6 straight-chain or branched alkyl groups; The substituents include any one of halogen, hydroxyl, carboxyl, or amino groups.

3. The solar cell device according to claim 1, characterized in that, The aromatic amine compounds include at least one of phenylethyl iodide, m-fluorophenylethyl iodide, phenylethyl chloride, o-fluorophenylethyl iodide, p-fluorophenylethyl iodide, trifluorophenylethyl iodide, anthracene-9-ylmethylammonium, or 2-(pyridin-4-yl)ethane-1-ammonium.

4. The solar cell device according to claim 1, characterized in that, The mass ratio of aromatic amine compounds to short-chain aliphatic amine compounds in the material of the two-dimensional passivation layer is (1.5~2.5):

1.

5. The solar cell device according to claim 1, characterized in that, The molecular formula of the alkylamine compound is RNH3I: R is selected from any one of substituted or unsubstituted C8~C30 straight-chain or branched alkyl, substituted or unsubstituted C8~C30 straight-chain or branched alkenyl, or substituted or unsubstituted C8~C30 straight-chain or branched alkynyl; the substituted substituents include any one of halogen, hydroxyl, carboxyl, or amino.

6. The solar cell device according to claim 1, characterized in that, The electron transport layer comprises a fullerene layer and a 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline layer stacked sequentially, wherein the fullerene layer is stacked with a one-dimensional passivation layer.

7. The solar cell device according to claim 1, characterized in that, The precursor material of the perovskite absorber layer includes Cs. 0.15 FA 0.85 PbI3.

8. The solar cell device according to claim 1, characterized in that, The hole transport layer is made of nickel oxide.

9. A method for fabricating a solar cell device according to any one of claims 1 to 8, characterized in that, The preparation method includes: The solar cell device is obtained by sequentially depositing a one-dimensional passivation layer, a perovskite absorber layer, a two-dimensional passivation layer, and a hole transport layer on the surface of the electron transport layer; or, the solar cell device is obtained by sequentially depositing a two-dimensional passivation layer, a perovskite absorber layer, a one-dimensional passivation layer, and an electron transport layer on the surface of the hole transport layer.

10. The preparation method according to claim 9, characterized in that, The method for obtaining the one-dimensional passivation layer includes: A one-dimensional material is deposited on one surface of the electron transport layer or perovskite absorber layer and then annealed to obtain the one-dimensional passivation layer.

11. The preparation method according to claim 10, characterized in that, The annealing temperature is 70~100℃, and the annealing time is 5~10 min.

12. The preparation method according to claim 9, characterized in that, The method for obtaining the two-dimensional passivation layer includes: A two-dimensional material is deposited on one surface of the perovskite absorber layer or hole transport layer, and then annealed to obtain the two-dimensional passivation layer.

13. The preparation method according to claim 12, characterized in that, The annealing temperature is 70~120℃, and the annealing time is 1~10 min.

14. An electronic device, characterized in that, The electronic device includes a solar cell device as described in any one of claims 1 to 8.

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