Display device and method of manufacturing the same

Abstract

A manufacturing method of a display device capable of easily removing mis-dropped ink is provided. The substrate processing method includes forming a bank defining an ink ejection region on a base; forming a sacrificial pattern on the bank; ejecting ink onto the ink ejection region; forming a first cover pattern on the ink of the ink ejection region and a second cover pattern on the sacrificial pattern; and removing the sacrificial pattern and the second cover pattern to expose an upper surface of the bank.

Description

Technical Field

[0001] This invention relates to a display device and a method for manufacturing the same. Background Technology

[0002] To manufacture display devices such as Liquid Crystal Display Devices (LCDs) and Organic Light Emitting Diode Display Devices (OLEDs), an inkjet printing process can be performed. Summary of the Invention

[0003] The problem that the invention aims to solve

[0004] On the other hand, ink must be printed on the pixel area. However, ink may accidentally drip outside the pixel area, which can cause defects in subsequent processes. Therefore, a repair process is used to remove the accidentally dripped ink. For example, lasers can be used to remove accidentally dripped ink.

[0005] However, the more ink drops that are accidentally spilled, the longer the repair process will take. Furthermore, if the number of spilled ink drops exceeds a preset limit, repair will not be performed, and the entire substrate will be treated as defective. Since higher resolution means more pixels, the number of spilled ink drops may increase.

[0006] The problem to be solved by the present invention is to provide a method for manufacturing a display device that can easily remove accidentally spilled ink.

[0007] Another problem to be solved by the present invention is to provide a display device manufactured by the manufacturing method described above.

[0008] The subject matter of this invention is not limited to the subject matter mentioned above, and those skilled in the art can clearly understand other subject matters not mentioned based on the following description.

[0009] Solution to the problem

[0010] One aspect of the method for manufacturing a display device according to the present invention for solving the above-mentioned problems includes: forming a bank on a substrate that defines an ink ejection area; forming a sacrificial pattern on the bank; ejecting ink onto the ink ejection area; forming a first overlay pattern on the ink in the ink ejection area and forming a second overlay pattern on the sacrificial pattern; removing the sacrificial pattern and the second overlay pattern to expose the upper surface of the bank.

[0011] Another aspect of the method for manufacturing a display device according to the present invention for solving the above-mentioned problems includes: forming a defined ink ejection region dike on a substrate, the dike comprising a first photosensitive material; forming a sacrificial pattern on the dike, the sacrificial pattern comprising a second photosensitive material different from the first photosensitive material; ejecting quantum dot ink onto the ink ejection region, and ejecting mis-dripping quantum dot ink onto the sacrificial pattern; forming a first overlay pattern on the quantum dot ink in the ink ejection region and forming a second overlay pattern on the sacrificial pattern and the mis-dripping quantum dot ink, and exposing at least a portion of the side surface of the sacrificial pattern by making the upper surface of the sacrificial pattern higher than the upper surface of the first overlay pattern; removing the sacrificial pattern and the second overlay pattern to remove the quantum dot ink mis-dripping onto the sacrificial pattern, and performing the removal using a solution with a higher selectivity for the second photosensitive material relative to the first photosensitive material.

[0012] One aspect of the display device of the present invention for solving the aforementioned other problem includes: a dam formed on a substrate and defining an ink ejection area; ink formed on the ink ejection area; and an overlay pattern formed on the ink, the upper surface of the overlay pattern being flush with or lower than the upper surface of the dam.

[0013] Specific details of other embodiments are included in the detailed description and accompanying drawings. Attached Figure Description

[0014] Figure 1 This is a flowchart illustrating a method for manufacturing a display device according to a first embodiment of the present invention.

[0015] Figures 2 to 7 It is used for explanation Figure 1 The intermediate steps of the manufacturing process are shown in the diagram.

[0016] Figure 8 This is a diagram illustrating a method for manufacturing a display device according to a second embodiment of the present invention.

[0017] Figure 9 This is a diagram illustrating a method for manufacturing a display device according to a third embodiment of the present invention.

[0018] Figure 10 This is a cross-sectional view showing the first substrate (color conversion substrate) of a display device manufactured using the manufacturing method of a display device according to a third embodiment of the present invention.

[0019] Figure 11 It is used to illustrate the use Figure 10 A cross-sectional view of a display device manufactured from a first substrate (color conversion substrate) is shown.

[0020] Figure 12This is a cross-sectional view used to illustrate a display device according to yet another embodiment of the present invention. Detailed Implementation

[0021] Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings. The advantages, features, and methods of implementing the present invention will become clear from the accompanying drawings and the detailed embodiments described below. However, the present invention is not limited to the embodiments disclosed below and can be implemented in various ways different from each other. These embodiments are provided merely to fully disclose the invention and to fully inform those skilled in the art of its scope, which is defined only by the scope of the claims. Throughout this specification, the same reference numerals refer to the same constituent elements.

[0022] Terms such as "below," "below," "lower," "above," and "upper," used as spatially relative terms, can be used to more easily describe the relationship between one element or component and other elements or components as shown in the figure. Spatially relative terms should be understood to include terms that describe the different orientations of elements during use or operation, in addition to the orientations shown in the figure. For example, if the elements shown in the figure are flipped, an element described as "below" or "below" of another element can be placed "above" of another element. Therefore, the exemplary term "below" can include both "below" and "above." Elements can also be oriented along other directions, thereby allowing the spatially relative terms to be interpreted according to the orientation direction.

[0023] It should be understood that although the terms first, second, etc., are used herein to describe various elements, constituent elements, and / or parts, these elements, constituent elements, and / or parts are of course not limited by these terms. These terms are only used to distinguish one element, constituent element, or part from another element, constituent element, or part. Therefore, it is natural that the first element, first constituent element, or first part mentioned below can also be a second element, second constituent element, or second part within the technical concept of the present invention.

[0024] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. When describing the invention with reference to the accompanying drawings, the same or corresponding constituent elements will be given the same reference numerals, and repeated descriptions thereof will be omitted.

[0025] Figure 1 This is a flowchart illustrating a method for manufacturing a display device according to a first embodiment of the present invention. Figures 2 to 7 It is used for explanation Figure 1 The intermediate steps of the manufacturing process are shown in the diagram.

[0026] refer to Figure 1 and Figure 2 A dam 380 (S10) is formed on the substrate 310 to define the ink ejection area (or light transmission area) TA1, TA2, TA3.

[0027] Specifically, the substrate 310 is a light-transmitting material, such as a glass substrate or a plastic substrate, but is not limited to these. The dam 380 can be a substance that undergoes a chemical change when exposed to light (i.e., a primary photosensitive material). For example, the dam 380 can contain negative photoresists (e.g., aromatic bis-azide, methacrylic acid ester, etc.) and positive photoresists (e.g., polymethyl methacrylate, diazidonaphthoquinone, etc.). Alternatively, the dam 380 can contain a black matrix, black pigment, metallic substances, etc., to act as a light-shielding layer, or it can also contain reflective substances such as Al or Ag to improve light efficiency.

[0028] refer to Figure 1 as well as Figure 3 Sacrifice pattern 410 (S20) is formed on embankment 380.

[0029] Specifically, a sacrificial material is formed on the entire surface of the substrate 310 on which the dam 380 is formed. The sacrificial material can be a substance that undergoes a chemical change when exposed to light (i.e., a second photosensitive material). The sacrificial material can be a negative photoresist or a positive photoresist, and can be a different substance from the first photosensitive material constituting the dam 380.

[0030] The sacrificial material formed in the ink ejection regions TA1, TA2, and TA3 is removed, leaving only the sacrificial material on the embankment 380 to form the sacrificial pattern 410. When a photosensitive material is used as the sacrificial material, the sacrificial material formed in the ink ejection regions TA1, TA2, and TA3 can be selectively removed only by exposure and development processes.

[0031] refer to Figure 1 as well as Figure 4 Ink 330, 340, and 350 are ejected into ink ejection areas TA1, TA2, and TA3 (S30). For example, inkjet equipment can be used to print the first ink 330 into the first ink ejection area TA1, the second ink 340 into the second ink ejection area TA2, and the third ink 350 into the third ink ejection area TA3.

[0032] For example, the first ink 330 can be used for blue light, the second ink 340 for red light, and the third ink 350 for green light. For instance, the first ink 330 allows blue light to pass through, the second ink 340 converts or alters the wavelength of the blue light to produce red light, and the third ink 350 converts or alters the wavelength of the blue light to produce green light. A detailed explanation of this will be found in [reference needed]. Figure 10 As described later. At least one of the first ink 330 to the third ink 350 may include quantum dots. Ink that includes quantum dots is called quantum dot ink.

[0033] Additionally, as shown in the figure, inks 330, 340, and 350 are ejected such that the upper surface of the embankment 380 is higher than the upper surfaces of the inks 330, 340, and 350. This is, for example, to prevent the first ink 330 from exceeding its corresponding first ink ejection area TA1 and thus affecting the adjacent second ink ejection area TA2. Since the first ink 330 and the second ink 340 are different types, they must not mix. Therefore, the first ink 330 should not be ejected into the second ink ejection area TA2.

[0034] On the other hand, when inks 330, 340, and 350 are ejected into ink ejection areas TA1, TA2, and TA3, some inks 330a and 340a may accidentally drip into areas outside of ink ejection areas TA1, TA2, and TA3. That is, some inks 330a and 340a may accidentally drip onto the sacrificial pattern 410.

[0035] refer to Figures 1 to 5 A first overlay pattern 451 is formed on the ink 330, 340, and 350 in the ink ejection areas TA1, TA2, and TA3, and a second overlay pattern 452 is formed on the sacrificial pattern 410 (S40).

[0036] Specifically, the second covering pattern 452 is mainly formed on the upper surface 410u of the sacrificial pattern 410, and almost not formed on the side surface 410s of the sacrificial pattern 410. Furthermore, the first covering pattern 451 is formed no higher than the sacrificial pattern 410. That is, the upper surface 410u of the sacrificial pattern 410 is higher than the upper surface 451u of the first covering pattern 451 (refer to reference numeral H1). Therefore, at least a portion of the side surface 410s of the sacrificial pattern 410 is exposed.

[0037] To form the first cover pattern 451 and the second cover pattern 452 in this form, plasma-enhanced chemical vapor deposition (PECVD) can be used, but it is not limited thereto. The first cover pattern 451 and the second cover pattern 452 can be, for example, an oxide film, a nitride film, or a oxynitride film, but it is not limited thereto.

[0038] As shown in the figure, since some ink 330a and 340a have been accidentally dripped onto the sacrificial pattern 410, if the second overlay pattern 452 is formed on the sacrificial pattern 410, the accidentally dripped ink 330a and 340a can be located between the sacrificial pattern 410 and the second overlay pattern 452.

[0039] refer to Figure 1 , Figure 6 as well as Figure 7 Remove the sacrificial pattern 410 and the second overlay pattern 452 (see reference). Figure 6 ), so as to expose the upper surface 380u of the embankment 380 (reference). Figure 7 ).

[0040] Specifically, the sacrificial pattern 410 can be removed using a chemical solution. Along with removing the sacrificial pattern 410, the second overlay pattern 452 on the sacrificial pattern 410 is also removed. Any ink drops 330a and 340a that have accidentally dripped between the sacrificial pattern 410 and the second overlay pattern 452 are also removed.

[0041] Here, the solution used to remove the sacrificial pattern 410 is a solution with a higher selectivity for the sacrificial pattern 410 relative to the dike 380. That is, when the dike 380 includes a first photosensitive material and the sacrificial pattern 410 includes a second photosensitive material, the solution should have a higher selectivity for the second photosensitive material relative to the first photosensitive material. For example, the solution can be tetramethylammonium hydroxide (TMAH), but is not limited to this.

[0042] like Figure 5 The upper surface 410u of the sacrificial pattern 410 is configured to be higher than the upper surface 451u of the first covering pattern 451, or the upper surface of the first covering pattern 451 is configured to be flush with or lower than the upper surface 380u of the embankment 380. Therefore, since at least a portion of the side surface 410s of the sacrificial pattern 410 is exposed, the sacrificial pattern 410 can be easily removed by the chemical solution.

[0043] Moreover, because the inks 330, 340, and 350 are equipped with the first overlay pattern 451, the inks 330, 340, and 350 will not be damaged by the liquid.

[0044] According to the first embodiment of the present invention, the method for manufacturing a display device can easily remove accidentally dripped ink 330a and 340a using the sacrificial pattern 410. Since additional repair processes using lasers or the like can be minimized or eliminated, a decrease in yield due to increased repair process time can be prevented.

[0045] Figure 8 This is a diagram illustrating a method for manufacturing a display device according to a second embodiment of the present invention. For ease of explanation, and in conjunction with... Figures 1 to 7 The explanation will focus on the differences between the previously explained content.

[0046] In the manufacturing method of the display device according to the first embodiment of the present invention, regarding Figure 1 In step S40, when the first overlay pattern 451 is formed on inks 330, 340, and 350, the upper surface 451u of the first overlay pattern 451 and the upper surface 380u of the embankment 380 can be at the same height (see reference). Figure 5 Therefore, even after removing the sacrificial pattern 410, the upper surface 451u of the first covering pattern 451 and the upper surface 380u of the embankment 380 can be at the same height (see reference). Figure 7 ).

[0047] On the other hand, in the method of manufacturing a display device according to the second embodiment of the present invention, regarding Figure 1 In step S40, when forming the first overlay pattern 451 on inks 330, 340, and 350, the upper surface 451u of the first overlay pattern 451 can be formed to be lower than the upper surface 380u of the embankment 380. If the first overlay pattern 451 is formed in this way, since the boundary surface between the embankment 380 and the sacrificial pattern 410 is exposed, the sacrificial pattern 410 can be more easily removed by the chemical solution when removing it. If the sacrificial pattern 410 is removed, it can be formed as follows: Figure 8 The cross-section shown. That is, the upper surface 451u of the first covering pattern 451 and the upper surface 380u of the embankment 380 can differ by a given height H2.

[0048] Figure 9 This is a diagram illustrating a method for manufacturing a display device according to a third embodiment of the present invention. For ease of explanation, and in conjunction with... Figures 1 to 7 The explanation will focus on the differences between the previously explained content.

[0049] Reference Figure 9 , can Figure 7An additional covering film 393 is formed on the resulting material. That is, an additional covering film 393 can be formed on the upper surface 380u of the exposed dike 380 and the upper surface 451u of the first covering pattern 451. The additional covering film 393 can be an oxide film, a nitride film, or a nitrogen oxide film. If both the first covering pattern 451 and the additional covering film 393 are inorganic materials, the portion where the first covering pattern 451 and the additional covering film 393 are in contact can form an inorganic-inorganic bond, which can effectively block the inflow of moisture or air from the outside.

[0050] Figure 10 This is a cross-sectional view showing a portion of a display device manufactured using a manufacturing method for a display device according to a third embodiment of the present invention. Figure 10 The first substrate (or color conversion substrate) 30a in the display device is shown.

[0051] refer to Figure 10 On substrate 310, a first light-transmitting region TA1, a second light-transmitting region TA2, a third light-transmitting region TA3, a first light-blocking region BA1, a second light-blocking region BA2, and a third light-blocking region BA3 are defined. The first to third light-transmitting regions TA1, TA2, and TA3 correspond to... Figure 2 The ink ejection areas are TA1, TA2, and TA3.

[0052] A first color filter 231, a second color filter 233, and a third color filter 235 are disposed on the substrate 310.

[0053] A first color filter 231, disposed in the first light-transmitting region TA1, selectively allows light of a first color (e.g., blue light) to pass through, while blocking or absorbing light of a second color (e.g., red light) and a third color (e.g., green light). The first color filter 231 may be a blue color filter, and may include blue colorants such as blue dye or blue pigment. In this specification, the term "colorant" includes both dye and pigment.

[0054] The second color filter 233, disposed in the second light-transmitting region TA2, can block or absorb light of the first color (e.g., blue light). That is, the second color filter 233 can act as a blue light blocking filter that blocks blue light. The second color filter 233 can selectively allow light of the second color (e.g., red light) to pass through, and block or absorb light of the first color (e.g., blue light) and light of the third color (e.g., green light). The second color filter 233 can be a red color filter, and may include red colorants such as blue dye or red pigment.

[0055] A third color filter 235 disposed in the third light-transmitting region TA3 can block or absorb the first color light (e.g., blue light). That is, the third color filter 235 can also act as a blue light blocking color filter. The third color filter 235 can selectively allow third color light (e.g., green light) to pass through, and block or absorb the first color light (e.g., blue light) and the second color light (e.g., red light). The third color filter 235 can be a green color filter, and can include green colorants such as green dye or green pigment.

[0056] Colored patterns 251, 252, and 253 are formed on the first to third light-shielding areas BA1, BA2, and BA3. Colored patterns 251, 252, and 253 may be made of the same material as the first color filter 231 and may be disposed on the same horizontal plane as the first color filter 231.

[0057] First to third light-shielding components 221, 222, and 223 can be formed on the colored patterns 251, 252, and 253.

[0058] The first cover layer 391 can be conformally formed on the first to third color filters 231, 233, 235 and the first to third light-shielding members 221, 222, 223. The first cover layer 391 can prevent impurities such as moisture or air from seeping in from the outside and damaging or contaminating the color patterns 251, 252, 253 and the first to third light-shielding members 221, 222, 223. Furthermore, the first cover layer 391 can prevent the pigments included in the first color filter 231, the second color filter 233, and the third color filter 235 from diffusing to structures different from those of the first color filter 231, the second color filter 233, and the third color filter 235, such as the first wavelength conversion pattern 340 and the second wavelength conversion pattern 350. In some embodiments, the first cover layer 391 can be composed of an inorganic material. For example, the first capping layer 391 may be composed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, and silicon nitride.

[0059] Embankment 380 can be located on the first to third shading areas BA1, BA2, and BA3. The top view shape of embankment 380 can be a grid shape.

[0060] A light-transmitting pattern 330 is formed on the first color filter 231 in the first light-transmitting area TA1 (corresponding to...). Figure 4 The first ink 330). The light-transmitting pattern 330 can be composed of a first base resin 331 and a first scatterer 333. The first base resin 331 is composed of a material with high light transmittance, and can be an organic material such as an epoxy resin, acrylic resin, cardo resin, or imide resin. The first scatterer 333 can be light-scattering particles, such as metal oxide particles or organic particles. Examples of metal oxides include titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2), and examples of organic particles include acrylic resins or polyurethane resins. The first scatterer 333 can scatter light in random directions without substantially changing the wavelength of the light transmitted through the light-transmitting pattern 330, regardless of the incident direction of the incident light.

[0061] The light-transmitting pattern 330 allows incident light to pass through. When the incident light passes through the light-transmitting pattern 330 and the first color filter 231, the red / green light components are filtered and emitted as blue light.

[0062] A first wavelength conversion pattern 340 (corresponding to) is formed on the second color filter 233 in the second light-transmitting region TA2. Figure 4The second ink 340). The first wavelength conversion pattern 340 includes a second substrate resin 341, a second scatterer 343, and a first wavelength changer 345.

[0063] The second base resin 341 may be the same material as the first base resin 331, or may contain at least one of the materials exemplified as constituent materials of the first base resin 331. The second scatterer 343 may be the same material as the first scatterer 333, or may contain at least one of the materials exemplified as constituent materials of the first scatterer 333.

[0064] The first wavelength changer 345 can convert or change the peak wavelength of the incident light to another specific peak wavelength. The first wavelength changer 345 can convert the incident light (e.g., blue light) into red light with a single peak wavelength in the range of about 610 nm to about 650 nm and emit it.

[0065] Examples of first wavelength modulators 345 include quantum dots, quantum rods, or phosphors. For example, quantum dots can emit particles of a specific color when an electron transitions from the conduction band to the valence band.

[0066] The quantum dots can be semiconductor nanocrystal materials. Depending on their composition and size, the quantum dots can have specific band gaps, absorbing light and emitting light with a specific wavelength. Examples of semiconductor nanocrystals that represent quantum dots include group IV nanocrystals, group II-VI compound nanocrystals, group III-V compound nanocrystals, group IV-VI nanocrystals, or combinations thereof.

[0067] Group II-VI compounds may be selected from the group consisting of: dielemental compounds selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; and compounds selected from the group consisting of InZnP, AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, C The three-element compounds selected from the group consisting of dZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof; and the four-element compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0068] Group III-V compounds can be selected from the following groups: binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; tri-element compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP and mixtures thereof; and tetra-element compounds selected from the group consisting of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof.

[0069] Group IV-VI compounds can be selected from the group consisting of: binary compounds selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof; ternary compounds selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof; and quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof. As Group IV elements, they can be selected from the group consisting of Si, Ge and mixtures thereof. As Group IV compounds, they can be binary mixtures selected from the group consisting of SiC, SiGe and mixtures thereof.

[0070] At this point, two-element, three-element, or four-element compounds can exist within the particle at a uniform concentration, or they can exist within the same particle in states with partially different concentration distributions. Alternatively, they can have a core / shell structure with one quantum dot surrounding another. The core-shell interface can have a concentration gradient where the concentration of the elements present in the shell decreases towards the center.

[0071] In some embodiments, the quantum dot may have a core-shell structure comprising a core of nanocrystals as described above and a shell surrounding the core. The shell of the quantum dot serves as a protective layer to prevent chemical modification of the core, thus maintaining semiconductor properties, and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell may be single-layered or multi-layered. The interface between the core and shell may have a concentration gradient, where the concentration of elements present in the shell decreases towards the center. Examples of shells for the quantum dot include oxides of metals or non-metals, semiconductor compounds, or combinations thereof.

[0072] For example, the oxides of metals or non-metals may include two-element compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, and NiO, or three-element compounds such as MgAl2O4, CoFe2O4, NiFe2O4, and CoMn2O4, but the present invention is not limited thereto.

[0073] In addition, examples of semiconductor compounds include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc., but the present invention is not limited thereto.

[0074] A second wavelength conversion pattern 350 is formed on the third color filter 235 in the third light-transmitting region TA3 (corresponding to...). Figure 4 The third ink (350).

[0075] The second wavelength conversion pattern 350 includes a third substrate resin 351, a third scatterer 353, and a second wavelength changer 355.

[0076] The third base resin 351 may be the same material as the first base resin 331, or may contain at least one of the materials exemplified as constituent materials of the first base resin 331. The third scatterer 353 may also be the same material as the first scatterer 333, or may contain at least one of the materials exemplified as constituent materials of the first scatterer 333.

[0077] The second wavelength changer 355 is capable of converting or changing the peak wavelength of the incident light to another specific peak wavelength. The second wavelength changer 355 can convert the incident light (e.g., blue light) into green light with a peak wavelength in the range of about 510 nm to about 550 nm and emit it.

[0078] Examples of second wavelength modulators 355 include quantum dots, quantum rods, or phosphors. For example, quantum dots can be particle-shaped materials that emit a specific color when electrons migrate from the conduction band to the valence band.

[0079] A first covering pattern 451 is formed on the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350, respectively. The upper surface of the first covering pattern 451 can be configured to be flush with or lower than the upper surface of the embankment 380. A second covering layer 393 (equivalent to...) Figure 9 The additional cover film 393 may be located on the first cover pattern 451, the light-transmitting pattern 330, the first wavelength conversion pattern 340 and the second wavelength conversion pattern 350.

[0080] The first covering pattern 451 and the second covering layer 393 can seal the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350. Therefore, it can prevent impurities such as moisture or air from seeping in from the outside and damaging or contaminating the light-transmitting pattern 330, the first wavelength conversion pattern 340, and the second wavelength conversion pattern 350.

[0081] Figure 11 It is used to illustrate the use Figure 10 A cross-sectional view of a display device manufactured from a first substrate (color conversion substrate) is shown.

[0082] refer to Figure 11 , will utilize Figure 10 The first substrate 30a and the second substrate 10, which are formed for displaying images, are bonded together. The filler material 70 may be located in the space between the first substrate 30a and the second substrate 10.

[0083] Since it has already been utilized Figure 10 The first substrate 30a has been described, therefore its description is omitted.

[0084] If we describe the second substrate 10, a first light-emitting region LA1, a second light-emitting region LA2, a third light-emitting region LA3, and a non-light-emitting region NLA are defined on the substrate 110 of the second substrate 10. The first light-emitting region LA1, the second light-emitting region LA2, and the third light-emitting region LA3 correspond to the first to third light-transmitting regions TA1, TA2, and TA3 of the first substrate 30a, and the non-light-emitting region NLA corresponds to the light-shielding regions BA1, BA2, and BA3 of the first substrate 30a.

[0085] The first switching element T1 and the first light-emitting element ED1 are located in the first light-emitting region LA1, the second switching element T2 and the second light-emitting element ED2 are located in the second light-emitting region LA2, and the third switching element T3 and the third light-emitting element ED3 are located in the third light-emitting region LA3.

[0086] The first light-emitting element ED1 includes a first anode electrode AE1, a light-emitting layer OL, and a cathode electrode CE; the second light-emitting element ED2 includes a second anode electrode AE2, a light-emitting layer OL, and a cathode electrode CE; and the third light-emitting element ED3 includes a third anode AE3, a light-emitting layer OL, and a cathode CE.

[0087] The insulating film 130 may be located on the first switching element T1, the second switching element T2, and the third switching element T3. In some embodiments, the insulating film 130 may be a planarization film.

[0088] The first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 are located on the insulating film 130. The pixel defining film 150 may be located on the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3. The pixel defining film 150 may include an opening exposing the first anode electrode AE1, an opening exposing the second anode electrode AE2, and an opening exposing the third anode electrode AE3, and may define a first light-emitting region LA1, a second light-emitting region LA2, a third light-emitting region LA3, and a non-light-emitting region NLA.

[0089] The first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 can be located on the insulating film 130. The first anode electrode AE1 can be located within the first light-emitting region LA1, with at least a portion extending into the non-light-emitting region NLA. The first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 can be reflective electrodes. In this case, the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 can be, for example, a metal layer comprising metals such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, and Cr. In another embodiment, the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 can also include a metal oxide layer stacked on the metal layer. In exemplary embodiments, the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 can also have a two-layer structure such as ITO / Ag, Ag / ITO, ITO / Mg, or ITO / MgF, or a multilayer structure such as ITO / Ag / ITO.

[0090] The light-emitting layer OL can be located on the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3. The light-emitting layer OL can have the shape of a continuous film formed across multiple light-emitting regions LA1, LA2, LA3, LA4, LA5, LA6 and a non-light-emitting region NLA.

[0091] The cathode electrode CE can be semi-permeable or permeable. When the cathode electrode CE is semi-permeable, it can contain Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF / Ca, LiF / Al, Mo, Ti, or compounds or mixtures thereof, such as a mixture of Ag and Mg. Additionally, when the thickness of the cathode electrode CE is tens to hundreds of angstroms, it can also be semi-permeable.

[0092] When the cathode electrode CE is permeable, it can contain a transparent conductive oxide (TCO). For example, the cathode electrode CE can contain WxOx (tungsten oxide), TiO2 (titanium oxide), ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), ITZO (indium tin zinc oxide), and MgO (magnesium oxide).

[0093] The light L1 emitted from the emitting layer OL is blue light, which includes long-wavelength components, intermediate-wavelength components, and short-wavelength components. Therefore, the final emitting layer OL, as light (L1), can emit blue light with a slightly broad emission peak.

[0094] A thin film sealing layer 170 is disposed on the cathode electrode CE. The thin film sealing layer 170 is commonly disposed in the first light-emitting region LA1, the second light-emitting region LA2, the third light-emitting region LA3, and the non-light-emitting region NLA.

[0095] The thin-film sealing layer 170 may include a first sealing inorganic film 171, a sealing organic film 173, and a second sealing inorganic film 175 sequentially stacked on the cathode electrode CE. The first sealing inorganic film 171 and the second sealing inorganic film 175 may be composed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon nitride (SiON), etc. The sealing organic film 173 may be composed of acrylic resin, methacrylic resin, polyisoprene, ethylene resin, epoxy resin, polyurethane resin, cellulose resin, and perylene resin, etc.

[0096] Additionally, the panel light-shielding member 190 can be located on the thin film sealing layer 170. The panel light-shielding member 190 can be located on the thin film sealing layer 170 and within the non-emitting region NLA. The panel light-shielding member 190 can prevent color mixing due to light intrusion between adjacent emitting regions, thereby further improving color reproduction.

[0097] Such a second substrate 10 and utilizing Figure 10 The first substrates 30a are bonded together. A filler material 70 may be located in the space between the second substrate 10 and the first substrate 30a. The filler material 70 may be made of a light-transmitting material. In some embodiments, the filler material 70 may be made of an organic substance. Exemplarily, the filler material 70 may be made of silicon (Si)-based organic substances, epoxy-based organic substances, etc., but is not limited thereto.

[0098] Light L1 generated in the first light-emitting element ED1 passes through the light-transmitting pattern 330 of the first substrate 30a and the first color filter 231 and is emitted as blue light. Light L1 generated in the second light-emitting element ED2 passes through the first wavelength conversion pattern 340 of the first substrate 30a and the second color filter 233 and is emitted as red light. Light L1 generated in the third light-emitting element ED3 passes through the second wavelength conversion pattern 350 of the first substrate 30a and the third color filter 235 and is emitted as green light.

[0099] Figure 12 This is a cross-sectional view illustrating a display device according to another embodiment of the present invention. For ease of explanation, details are omitted. Figure 10 as well as Figure 11 The content described is essentially the same.

[0100] refer to Figure 12 In the first substrate 10b, not only are a first light-emitting element ED1, a second light-emitting element ED2 and a third light-emitting element ED3 formed on the substrate 110, but also a light-transmitting pattern 330, a first wavelength conversion pattern 340 and a second wavelength conversion pattern 350, color filters 231a, 233a and 235a, a first covering pattern 451, a color filter 250a and a light-shielding member 220a are formed.

[0101] It is possible that a second substrate 30b, including a substrate 310, is located on a first substrate 10b, and a filler material 70 is located between the first substrate 10b and the second substrate 30b.

[0102] Although embodiments of the invention have been described above with reference to the accompanying drawings, those skilled in the art should understand that the invention can be practiced in other specific ways without altering its technical concept or essential characteristics. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

Claims

1. A method for manufacturing a display device, comprising: Form a dam on the substrate that defines the ink ejection area; A sacrificial pattern was formed on the embankment; Ink is ejected onto the ink ejection area; A first overlay pattern is formed on the ink in the ink ejection area, and a second overlay pattern is formed on the sacrificial pattern; as well as Remove the sacrificial pattern and the second covering pattern to expose the upper surface of the dike. The first and second overlay patterns include an oxide film, a nitride film, or a oxynitride film. The first overlay pattern is in direct contact with the ink, and the second overlay pattern is in direct contact with the sacrificial pattern.

2. The method for manufacturing a display device according to claim 1, wherein, Spraying the ink onto the ink spraying area includes: spraying out ink that has accidentally dripped onto the sacrificial pattern while spraying the ink onto the ink spraying area. Removing the sacrificial pattern and the second overlay pattern includes removing the ink that was accidentally dripped onto the sacrificial pattern along with the sacrificial pattern and the second overlay pattern.

3. The method for manufacturing a display device according to claim 1, wherein, Spraying ink onto the ink spraying area includes spraying ink such that the upper surface of the dike is higher than the upper surface of the ink.

4. The method for manufacturing a display device according to claim 3, wherein, Forming the first overlay pattern and the second overlay pattern includes exposing at least a portion of the side surface of the sacrificial pattern by making the upper surface of the sacrificial pattern higher than the upper surface of the first overlay pattern.

5. The method for manufacturing a display device according to claim 3, wherein, Forming the first covering pattern and the second covering pattern includes: forming the first covering pattern such that the upper surface of the first covering pattern is lower than the upper surface of the embankment.

6. The method for manufacturing a display device according to claim 1, wherein, The embankment contains a first photosensitive material, and the sacrificial pattern contains a second photosensitive material that is different from the first photosensitive material. Removing the sacrificial pattern and the second overlay pattern includes removing the sacrificial pattern without removing the embankment using a solution with a higher selectivity for the second photosensitive material relative to the first photosensitive material.

7. The method for manufacturing a display device according to claim 6, wherein, The solution is TMAH, or tetramethylammonium hydroxide.

8. The method for manufacturing a display device according to claim 1, wherein, Forming the first overlay pattern and the second overlay pattern includes using PECVD, i.e., plasma-enhanced chemical vapor deposition.

9. The method for manufacturing a display device according to claim 1, further comprising: An additional covering film is formed on the upper surface of the first covering pattern formed in the ink ejection area and on the exposed upper surface of the embankment.

10. The method for manufacturing a display device according to claim 1, further comprising: Before the dam is formed, a color filter is formed on the substrate.

11. A method for manufacturing a display device, comprising: A dam defining an ink ejection region is formed on a substrate, the dam comprising a first photosensitive material; A sacrificial pattern is formed on the embankment, the sacrificial pattern containing a second photosensitive substance different from the first photosensitive substance; Quantum dot ink is ejected onto the ink ejection area, and mis-dropped quantum dot ink is ejected onto the sacrificial pattern; A first overlay pattern is formed on the quantum dot ink in the ink ejection area, and a second overlay pattern is formed on the sacrificial pattern and the accidentally dripped quantum dot ink, and at least a portion of the side of the sacrificial pattern is exposed by making the upper surface of the sacrificial pattern higher than the upper surface of the first overlay pattern. as well as The sacrificial pattern and the second overlay pattern are removed to remove quantum dot ink that has accidentally dripped onto the sacrificial pattern, and this removal is performed using a solution with a higher selectivity for the second photosensitive material relative to the first photosensitive material. The first and second overlay patterns include an oxide film, a nitride film, or a oxynitride film. The first overlay pattern is in direct contact with the ink, and the second overlay pattern is in direct contact with the sacrificial pattern.

12. The method of manufacturing a display device according to claim 11, wherein, Forming the first overlay pattern and the second overlay pattern includes using PECVD, i.e., plasma-enhanced chemical vapor deposition.

13. The method of manufacturing a display device according to claim 11, wherein, Forming the first covering pattern and the second covering pattern includes: forming the first covering pattern such that the upper surface of the first covering pattern is lower than the upper surface of the embankment.

14. The method of manufacturing a display device according to claim 11, wherein, The solution is TMAH, or tetramethylammonium hydroxide.

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