Spintronic devices, circuit units, computing networks, operators and neural networks
CN116322276BActive Publication Date: 2026-08-28INST OF MICROELECTRONICS CHINESE ACAD OF SCI LTD
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Patent Information
- Application Number
- CN202310339778.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-03-31
- Publication Date
- 2026-08-28
- Estimated Expiration
- 2043-03-31
AI Technical Summary
Technical Problem
然而，目前基于自旋电子的随机器件主要是基于低势垒的磁隧道结(magnetic tunneljunction，MTJ)器件，在热噪声的扰动下概率性的翻转，但概率的调制通常需要STT电流、外部磁场等多种方式实现，对器件寿命及集成应用不利，同时没有考虑磁畴壁(DW)的本征随机性
Benefits of technology
[0042]多个读写电路单元，一个上述突触阵列的输出端至少与一个上述读写电路单元中的写晶体管源漏极的输入端链接；
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Figure CN116322276B_ABST
Abstract
The present disclosure provides a spintronic device, a circuit unit, a computing network, an operator and a neural network. The random spintronic device comprises: a heater for writing a control pulse signal; an isolation layer formed on the top surface of the heater; an antiferromagnetic layer formed on the top surface of the isolation layer; a ferromagnetic layer formed on the top surface of the antiferromagnetic layer, wherein the antiferromagnetic layer is used to fix the magnetic moment of the ferromagnetic layer so that the ferromagnetic layer does not generate a magnetic domain wall; an RKKY coupling layer formed on the top surface of the ferromagnetic layer; and a magnetic tunnel junction formed on one side of the top surface of the RKKY coupling layer, wherein in the case of inputting a write pulse signal, the magnetic domain wall in the magnetic domain wall free layer of the magnetic tunnel junction moves.
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