单晶硅的培育方法
By controlling the heat generation ratio Qd/Qu of the heating section during the cultivation of single-crystal silicon, the temperature of the silicon melt surface is reduced, solving the problems of large evaporation of volatile dopants and dislocation, thus achieving efficient dopant addition and cultivation of low resistivity single-crystal silicon.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SUMCO CORP
- Filing Date
- 2021-07-30
- Publication Date
- 2026-07-17
AI Technical Summary
In existing technologies for cultivating monocrystalline silicon, the evaporation of volatile dopants is large, resulting in a poor hit rate of the target resistivity of monocrystalline silicon. Furthermore, the formation of a solidification layer in the high-pressure chamber can lead to dislocation problems.
By preventing the formation of a solidified layer on the surface of the molten silicon, and by heating the crucible with a lower heating section generating more heat than the upper heating section, the temperature of the liquid surface is reduced, thereby suppressing the evaporation of volatile dopants. Furthermore, by controlling the heating ratio Qd/Qu within a specific range, reliable addition of dopants is ensured.
It effectively suppressed the evaporation of volatile dopants, reduced the deviation of evaporation amount, improved the target resistivity hit rate of single crystal silicon, and avoided the occurrence of dislocation, thus ensuring the reliability of the doping process.
Smart Images
Figure CN116324050B_ABST