一种耐高温高压的MEMS压力传感器压敏芯片及其制备方法
By employing a heavily doped P-type silicon device layer and metal thin film etching process to form an embossed piezoresistive structure in a MEMS pressure sensor, combined with vacuum bonding and TGV technology, the problem of unstable sensitivity and linearity of MEMS piezoresistive pressure sensors under high temperature and high pressure environments was solved, achieving high-precision pressure measurement.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CETC CHIPS TECH GRP CO LTD
- Filing Date
- 2022-12-15
- Publication Date
- 2026-07-17
AI Technical Summary
Existing MEMS piezoresistive pressure sensors struggle to maintain a balance between sensitivity, linearity, and pressure resistance under high temperature and high pressure conditions, while SOI piezoresistive pressure sensors suffer from electrostatic problems under high temperature conditions, leading to unstable electrical performance.
An embossed piezoresistive structure was fabricated using a heavily doped p-type silicon device layer and metal thin film etching processes, combined with vacuum bonding and TGV technology. <111> The crystal-oriented cross-groove SOI piezoresistive varistor chip isolates the pressure-sensitive film from the external medium and forms a Wheatstone bridge circuit through a highly symmetrical lead disk structure.
It improves the linearity and voltage resistance of the varistor chip, enhances its long-term stability, meets the application requirements under high temperature and high pressure environments, and is suitable for leadless packaging and oil-filled packaging.
Smart Images
Figure CN116332119B_ABST