A batch chip rapid over-temperature test method and a chip rapid over-temperature test system

Abstract

The application provides a batch chip rapid over-temperature test method and a chip rapid over-temperature test system, and aims at solving the technical problems of the existing chip device test method and system, such as complicated test process, long test time and inconsistent test results. The test method of the application is as follows: a temperature characteristic curve of an auxiliary device is tested and obtained; a chip to be tested is made to enter an over-temperature protection state; a clamping voltage u1 of the auxiliary device in the over-temperature protection state is collected; a clamping voltage u2 of the auxiliary device in an over-temperature protection recovery state is collected; according to the temperature characteristic curve of the auxiliary device, the u1 and the u2, a temperature value t 保 corresponding to the u1 is obtained, and a temperature value t 恢 corresponding to the u2 is obtained, which are respectively taken as a protection temperature and a recovery temperature of the over-temperature protection of the chip to be tested; the test method of the application can quickly obtain the protection temperature and the recovery temperature of the over-temperature protection of the batch chip to be tested by only obtaining the temperature characteristic curve of the auxiliary device.

Description

Technical Field

[0001] This invention relates to a method for testing the over-temperature of chips, and more particularly to a method and system for rapid over-temperature testing of chips in batches. Background Technology

[0002] Chips generate heat during operation. To prevent damage from overheating during normal operation, an over-temperature protection (OTP) circuit is designed inside the chip. The function of the over-temperature protection circuit is to shut down the chip under test when its temperature rises to a pre-designed temperature, thus preventing the chip from continuing to operate and generate heat.

[0003] During chip manufacturing, the over-temperature protection circuit needs to be tested and calibrated to ensure it operates within a set temperature range. Traditional over-temperature protection (OTP) testing verifies the circuit's functionality by placing the chip under test (TUT) in a high-temperature oven to simulate a high-temperature environment. The oven temperature is gradually increased, and the chip's ability to enter over-temperature protection mode at this temperature is observed. However, this method is complex, time-consuming, has low accuracy, and cannot test the over-temperature protection function of every chip under test.

[0004] Currently, there is another method to calculate the OTP temperature by testing the body diode voltage of the chip under test. However, this method and system require testing the voltage of the body diode packaged in each chip under test to obtain the temperature characteristic curve of the body diode, and then calculating the protection temperature and recovery temperature of the chip under test. The testing process is relatively cumbersome, and due to the differences between different devices, the temperature characteristics of the body diode are also different, resulting in inconsistent test results. Summary of the Invention

[0005] The purpose of this invention is to solve the technical problems of existing test systems and batch testing methods for chip devices under test, such as cumbersome test procedures, long test times, and inconsistent test results, and to provide a chip rapid over-temperature test system and a batch chip rapid over-temperature test method.

[0006] To achieve the above objectives, the technical solution of the present invention is as follows:

[0007] A method for rapid over-temperature testing of batch chips, characterized by the following steps:

[0008] 1. Select a diode with good temperature characteristics as an auxiliary device, and test and obtain the temperature characteristic curve of the auxiliary device;

[0009] 2. Apply a load to the chip under test, and simultaneously apply working voltages to the chip under test and the auxiliary device, while continuously heating the chip under test and the auxiliary device under the same heating environment;

[0010] 3. Collect the clamping voltage u1 of the auxiliary device under over-temperature protection conditions.

[0011] The output voltage of the chip under test is detected. When the output voltage of the chip under test is detected to be 0, the over-temperature protection state is entered, the heating of the chip under test and auxiliary devices is stopped, and the clamping voltage u1 of the auxiliary devices is collected at this time.

[0012] 4. Collect the clamping voltage u2 of the auxiliary device under the over-temperature protection recovery state.

[0013] Continue to detect the output voltage of the chip under test. When the output voltage of the chip under test is detected to be greater than 0, the clamping voltage u2 of the auxiliary device is collected at this time.

[0014] 5. Based on the temperature characteristic curve of the auxiliary device obtained in step 1, and combined with the clamping voltage values ​​u1 and u2, the temperature value t corresponding to the clamping voltage u1 is obtained. 保 The temperature value t corresponding to the clamping voltage u2 恢 , with temperature value t 保 The temperature value t is used as the over-temperature protection temperature for the chip under test. 恢 As the recovery temperature for over-temperature protection of the chip under test;

[0015] 6】Disconnect the operating voltage applied to the chip under test and the auxiliary device in sequence, disconnect the load applied to the chip under test, remove the chip under test, put in a new chip as the chip under test, and repeat steps 2】-5】 until the protection temperature and recovery temperature of the batch of chips under test over-temperature protection are obtained.

[0016] Furthermore, step 5 specifically involves:

[0017] 5.1】Take four points on the temperature characteristic curve of the auxiliary device and obtain the corresponding abscissa temperature value and ordinate clamping voltage value. The temperature values ​​of the four points are denoted as t1, t2, t3 and t4, and the corresponding clamping voltage values ​​are denoted as v1, v2, v3 and v4, respectively. Among them, t1 and t3 are less than the over-temperature protection temperature of the chip under test, and t2 and t4 are greater than the over-temperature protection temperature of the chip under test.

[0018] 5.2】The over-temperature protection temperature t of the chip under test can be obtained by the following formula. 保 and recovery temperature t 恢 :

[0019]

[0020]

[0021] Furthermore, step 5 specifically involves:

[0022] 5.1】Take two points on the temperature characteristic curve of the auxiliary device and obtain the corresponding horizontal axis temperature value and vertical axis clamping voltage value. The temperature values ​​of the two points are denoted as t5 and t6, and the clamping voltage values ​​of the two points are denoted as v5 and v6, respectively. Among them, t5 is less than the over-temperature protection temperature of the chip under test, and t6 is greater than the over-temperature protection temperature of the chip under test.

[0023] 5.2】The over-temperature protection temperature t of the chip under test can be obtained by the following formula. 保 and recovery temperature t 恢 :

[0024]

[0025]

[0026] The present invention also provides a chip rapid over-temperature testing system for implementing the above-mentioned batch chip rapid over-temperature testing method, which is characterized in that it includes an integrated testing device, a testing machine and an adjustable load;

[0027] The integrated testing device includes an installation module and a heating module;

[0028] The installation module is used to install the chip under test and auxiliary devices, and to realize signal transmission between the chip under test, auxiliary devices and the test machine;

[0029] The heating module is used to heat the chip under test and auxiliary devices installed in the mounting module, and to place them in the same heating environment.

[0030] One end of the adjustable load is connected to one output terminal of the test machine, and the other end is connected to the chip under test, which is used to apply a corresponding load to the chip under test according to the control of the test machine;

[0031] The two input terminals of the tester are used to connect to the voltage output terminals of the chip under test and the auxiliary device, respectively. The three output terminals of the tester are used to provide working voltages to the heating module, the chip under test, and the auxiliary device, respectively. The tester is also used to obtain the clamping voltage of the corresponding auxiliary device by controlling and detecting the output voltage of the chip under test, and then analyze the protection temperature and recovery temperature of the chip under test over-temperature protection by combining the temperature characteristic curve of the auxiliary device.

[0032] Furthermore, the mounting module includes a base, a fixing pin plate, a first welding pin group, and a second welding pin group;

[0033] The base has a hollow groove structure, and a floating plate is installed inside the hollow groove;

[0034] The floating plate can move elastically in the vertical direction relative to the base. Its upper surface is provided with a first groove and a second groove, which are used to install the chip under test and auxiliary devices, respectively. A first pin through hole group is opened on the first groove, and a second pin through hole group is opened on the second groove.

[0035] The fixing needle plate is located below the base, and the upper end face of the fixing needle plate is fixedly connected to the lower end face of the base;

[0036] The lower ends of the first welding pin group and the second welding pin group pass through the fixing pin plate and are fixed by the fixing pin plate; when the floating plate is pressed, the upper end of the first welding pin group contacts the pin of the chip under test through the first pin through hole group, and the upper end of the second welding pin group contacts the pin of the auxiliary device through the second pin through hole group. When the floating plate is not pressed, the first welding pin group and the second welding pin group disconnect from the pin of the chip under test and the pin of the auxiliary device, respectively.

[0037] The heating module includes an upper cover, a heating element disposed on the upper cover, and a heat-conducting component disposed outside the heating element;

[0038] The heat-conducting component is correspondingly arranged with the hollow groove structure of the base. The surface of the heat-conducting component is provided with heat-conducting protrusions and pin pressing pads with heat insulation function. When the top cover and the base are closed, the heat-conducting component, the pin pressing pads and the heat-conducting protrusions respectively contact the chip under test installed in the first groove, the pins of the chip under test and the auxiliary device installed in the second groove, and simultaneously press the floating plate downward.

[0039] Furthermore, the testing machine obtains the over-temperature protection temperature t of the chip under test using the following formula. 保 and recovery temperature t 恢 :

[0040]

[0041]

[0042] Where t1, t2, t3, and t4 represent the temperature values ​​corresponding to the four points on the temperature characteristic curve of the auxiliary device, and v1, v2, v3, and v4 represent the clamping voltage values ​​corresponding to the four points on the temperature characteristic curve of the auxiliary device; t1 and t3 are less than the over-temperature protection temperature of the chip under test, and t2 and t4 are greater than the over-temperature protection temperature of the chip under test.

[0043] Alternatively, the testing machine can obtain the over-temperature protection temperature t of the chip under test using the following formula. 保 and recovery temperature t 恢 :

[0044]

[0045]

[0046] Where t5 and t6 represent the temperature values ​​corresponding to two points on the temperature characteristic curve of the auxiliary device, and v5 and v6 represent the clamping voltage values ​​corresponding to two points on the temperature characteristic curve of the auxiliary device. t5 is less than the over-temperature protection temperature of the chip under test, and t6 is greater than the over-temperature protection temperature of the chip under test.

[0047] Furthermore, it also includes a first temperature sensor;

[0048] The first temperature sensor is used to detect the output temperature of the heating element and provide real-time feedback of the output temperature of the heating element to the testing machine.

[0049] Furthermore, it also includes a first acquisition line, a second acquisition line, a third acquisition line, a PCB board, a first input line, a second input line, and a third input line;

[0050] One end of the first acquisition line, one end of the second acquisition line, and one end of the third acquisition line are respectively connected to the three input terminals of the test machine; one end of the first input line, one end of the second input line, and one end of the third input line are respectively connected to the three output terminals of the test machine.

[0051] The PCB board is fixedly connected to the lower end face of the fixed pin board, and the lower ends of the first welding pin group and the second welding pin group pass through the PCB board respectively; multiple lead pins are provided on the PCB board.

[0052] The other end of the first acquisition line is connected to a pin on the PCB board for outputting the output voltage of the chip under test, which is used to acquire the output voltage of the chip under test in real time through the first acquisition line and transmit it to the test machine;

[0053] The other end of the second acquisition line is connected to a lead pin on the PCB board for outputting the clamping voltage of the auxiliary device, which is used to acquire the clamping voltage of the auxiliary device in real time through the second acquisition line and transmit it to the test machine;

[0054] The other end of the third acquisition line is connected to the first temperature sensor, which is used to acquire the output temperature of the heating element in real time through the third acquisition line and transmit it to the testing machine.

[0055] The other end of the first input line is connected to a heating element, which is used to apply a working voltage to the heating element through the testing machine for heating;

[0056] The other end of the second input line is connected to a pin on the PCB board used to apply the operating voltage to the chip under test;

[0057] The other end of the second input line is connected to a pin on the PCB board for applying operating voltage to auxiliary devices.

[0058] Furthermore, it also includes a second temperature sensor and a fourth acquisition line;

[0059] The second temperature sensor is used to collect the temperature of the chip under test in real time;

[0060] One end of the fourth acquisition line is connected to the second temperature sensor, and the other end is connected to the fourth input terminal of the testing machine.

[0061] The advantages of this invention compared to the prior art are as follows:

[0062] 1. The present invention provides a rapid over-temperature testing method for batch chips. The chip under test and auxiliary devices are heated in the same heating environment. Therefore, only one auxiliary device needs to be selected and its temperature characteristic curve needs to be obtained to complete the over-temperature test of batch chips under test. Compared with the traditional over-temperature test of batch chips under test, which requires testing the voltage of the body diode corresponding to each chip under test first, this method greatly improves the test speed. At the same time, since the temperature characteristic curve of the same auxiliary device is referenced, the accuracy and consistency of the test results are improved.

[0063] 2. The present invention provides a rapid over-temperature testing method for batch chips. By utilizing the temperature characteristic curve of an auxiliary device, since the temperature characteristic curve is obtained based on the actual working condition of the auxiliary device, the test results are more consistent with the actual situation of the chip under test during the over-temperature protection test, and the accuracy is higher. It can quickly and accurately obtain the protection temperature and recovery temperature of the over-temperature protection.

[0064] 3. The present invention provides a rapid over-temperature testing method for batch chips. Compared with existing intelligent power switch chip testing methods, this application does not require disconnecting the working voltage and load applied to the chip under test or reapplying the working voltage to the auxiliary device when testing the clamping voltage of the auxiliary device in the over-temperature protection state and over-temperature recovery state. It only requires applying the working voltage and load to the chip under test and applying the working voltage to the auxiliary device at the beginning of the test. The clamping voltage of the auxiliary device is measured in the over-temperature protection state and over-temperature recovery state respectively. The over-temperature protection temperature and recovery temperature of the chip under test are obtained by measuring the clamping voltage. The test results have good timeliness and avoid the error of test results caused by the secondary application of load and working voltage, thus improving the accuracy of the test results.

[0065] 4. The present invention provides a chip rapid over-temperature testing system, which realizes the above-mentioned rapid over-temperature testing method for batch chips under test through a testing machine, an integrated testing device and an adjustable load. The system has a simple structure and is easy to operate.

[0066] 5. The present invention provides a chip rapid over-temperature testing system, which integrates a testing device and provides a heat-conducting component on its upper cover. The surface of the heat-conducting component is provided with heat-conducting protrusions corresponding to the positions of the second groove. During testing, the chip under test and the auxiliary device are respectively installed in the first groove and the second groove in the floating plate. The upper cover and the base are closed, so that the heat-conducting protrusions are in contact with the auxiliary device installed in the second groove, and the heat-conducting component is in contact with the chip under test installed in the first groove. This ensures that the chip under test and the auxiliary device are in the same environment during the heating process. Only one auxiliary device is used during testing to assist in the testing of multiple chips under test, thereby improving the accuracy of the test and the consistency of the test results. Attached Figure Description

[0067] Figure 1 This is a system flowchart of a rapid over-temperature testing method for batch chips under test according to the present invention;

[0068] Figure 2 This is a schematic diagram showing the connection of the test machine, integrated test device and adjustable load in the test system of the present invention.

[0069] Figure 3 This is a schematic diagram of the integrated testing device in the testing system of the present invention;

[0070] Figure 4 This is a schematic diagram of the structure of the module installed in the integrated testing device of the present invention;

[0071] Figure 5 This is a schematic diagram of the heating module in the integrated testing device of the present invention;

[0072] Figure 6 This is a schematic diagram showing the connection between the various components of the integrated testing device of the present invention and the testing machine.

[0073] The specific reference numerals in the attached figures are as follows:

[0074] 1-Integrated testing device; 2-Testing machine; 3-Adjustable load; 4-Base; 5-Fixed pin plate; 6-First welding pin group; 7-Second welding pin group; 8-PCB board; 9-Floating plate; 11-First groove; 12-Second groove; 13-Top cover; 14-Heating element; 15-Heat-conducting component; 16-Pin pressing piece; 17-Heat-conducting protrusion; 18-First temperature sensor; 19-Second temperature sensor. Detailed Implementation

[0075] To make the advantages and features of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0076] This invention provides a method for rapid over-temperature testing of batch chips, combined with the aforementioned rapid over-temperature testing system for chips, such as... Figure 1As shown, the specific steps are as follows:

[0077] 1. Select a diode with good temperature characteristics as an auxiliary device, and test and obtain its temperature characteristic curve. The test method is as follows: heat the selected auxiliary diode, and while adjusting the heating temperature, detect the clamping voltage of the auxiliary diode. This will give you the diode temperature characteristic curve with temperature on the horizontal axis and clamping voltage on the vertical axis. After obtaining the temperature characteristic curve of the auxiliary diode, over-temperature detection begins.

[0078] 2. Apply a load to the chip under test (DUT). When applying the load, select an appropriate load type according to the type of DUT. Simultaneously apply operating voltages to both the DUT and the auxiliary device, and continuously heat both the DUT and the auxiliary device under the same heating environment.

[0079] 3. Collect the clamping voltage u1 of the auxiliary device under over-temperature protection conditions.

[0080] The output voltage of the chip under test (DUT) is detected. When the output voltage of the DUT is detected to be 0, it enters an over-temperature protection state, stopping heating of the DUT and auxiliary devices, and acquiring the clamping voltage u1 of the auxiliary devices at this time. Compared with existing intelligent power switch over-temperature protection test methods, this invention does not require disconnecting the load and operating voltage applied to the DUT, nor does it require applying an operating voltage to the body diode of the intelligent power switch when measuring the clamping voltage of the auxiliary devices under over-temperature protection conditions. It only needs to acquire the clamping voltage of the auxiliary devices under over-temperature protection conditions, making the operation process simpler and more convenient, and the test results more accurate.

[0081] 4. Collect the clamping voltage u2 of the auxiliary device under the over-temperature protection recovery state.

[0082] The output voltage of the chip under test (DUT) continues to be monitored. When the output voltage of the DUT is detected to be greater than 0, it enters the over-temperature protection recovery state, and the clamping voltage u2 of the auxiliary device is collected at this time. The DUT stops working in the over-temperature protection state, and resumes working as the temperature drops. Compared with the existing intelligent power switch over-temperature protection test method, this invention does not require applying a load and operating voltage to the DUT, nor does it require applying an operating voltage to the body diode of the intelligent power switch. It only needs to collect the clamping voltage of the auxiliary device in the over-temperature recovery state when the DUT has an output voltage detected. The operation process is simpler and more convenient, and the test results are more accurate.

[0083] 5. Obtain the protection temperature t of the intelligent power switch over-temperature protection. 保 and recovery temperature t 恢

[0084] 5.1】Take four points on the temperature characteristic curve of the auxiliary device obtained in step 1】, and obtain the corresponding horizontal axis temperature value and vertical axis clamping voltage value for the four points. The temperature values ​​of the four points are denoted as t1, t2, t3 and t4, and the corresponding clamping voltage values ​​are denoted as v1, v2, v3 and v4, respectively. Among them, t1 and t3 are less than the over-temperature protection temperature of the chip under test, and t2 and t4 are greater than the over-temperature protection temperature of the chip under test.

[0085] 5.2】The over-temperature protection temperature t of the chip under test is obtained by formulas (1) and (2) respectively. 保 and recovery temperature t 恢 :

[0086]

[0087]

[0088] In other embodiments of the present invention, two identical sets of points can be selected, and the over-temperature protection temperature t of the chip under test can be obtained by formulas (3) and (4), respectively. 保 and recovery temperature t 恢 :

[0089]

[0090]

[0091] Where t5 and t6 represent the temperature values ​​corresponding to two points on the temperature characteristic curve of the auxiliary device, and v5 and v6 represent the clamping voltage values ​​corresponding to two points on the temperature characteristic curve of the auxiliary device. t5 is less than the over-temperature protection temperature of the chip under test, and t6 is greater than the over-temperature protection temperature of the chip under test.

[0092] However, regardless of whether four points are selected or two sets of identical points are selected, the over-temperature protection temperature t of the chip under test is calculated. 保 and recovery temperature t 恢 When testing a diode, a point on the temperature characteristic curve corresponds to a temperature value lower than the over-temperature protection temperature of the chip under test. For ease of testing, a point with a corresponding room temperature (typically 20-25°C) can be selected on the diode's temperature characteristic curve. Another point corresponds to a temperature value higher than the over-temperature protection temperature of the chip under test, typically 170-180°C. In this embodiment, the temperature collected by the second temperature sensor 19 can also help verify the accuracy of the protection and recovery temperatures calculated by the auxiliary devices.

[0093] 6】Disconnect the working voltage applied to the auxiliary device of the chip under test in sequence, disconnect the load applied to the chip under test, take out the chip under test, put in a new chip as the chip under test, and perform the test on the next chip under test. Repeat steps 2】-5】 until the protection temperature and recovery temperature of the over-temperature protection of the batch of chips under test are obtained.

[0094] Meanwhile, the batch chip rapid over-temperature testing method provided by this invention, compared with the existing intelligent power switch rapid over-temperature testing method, does not require frequent diode replacement during testing. It only requires one temperature characteristic curve test on the selected auxiliary device. Subsequently, the protection temperature and recovery temperature of batch chip over-temperature protection can be obtained through steps 2]-5]. This testing method not only improves the convenience of over-temperature testing and shortens the testing time, but also improves the accuracy of testing and the consistency of test results.

[0095] To achieve the aforementioned method for rapid over-temperature testing of batch chips, such as... Figure 2 As shown, the present invention also provides a chip rapid over-temperature testing system, which includes an integrated testing device 1, a testing machine 2, and an adjustable load 3.

[0096] Integrated test device 1 Figure 3 As shown, it includes an installation module and a heating module. Figure 4 As shown, the installation module includes a base 4, a fixing pin plate 5, a first welding pin group 6, and a second welding pin group 7. The base 4 has a hollow groove structure, within which a float plate 9 is installed. The float plate 9 is elastically movable vertically relative to the base 4. In this embodiment, a raised step is provided at the lower part of the hollow groove structure of the base 4 to allow the bottom of the float plate 9 to be mounted on the step within the hollow groove structure. The fixing pin plate 5 is located below the base 4, and its upper end face is fixedly connected to the lower end face of the base 4.

[0097] In this embodiment, a limiting spring is provided between the fixed needle plate 5 and the float plate 9, so that the float plate 9 can move elastically relative to the base 4 in the vertical direction through the limiting spring; in other embodiments of the present invention, other elastic limiting structures can also be used to achieve the elastic movement of the float plate 9 relative to the base 4 in the vertical direction.

[0098] Meanwhile, in this embodiment, guide posts are respectively provided at the diagonal positions of the fixed needle plate 5, and through holes are opened on the float plate 9 at the corresponding positions of the guide posts. When the float plate 9 is pressed down, the two diagonal guide posts pass through the corresponding through holes to limit the horizontal movement, so that the two sides of the float plate 9 remain balanced when pressed down.

[0099] The upper surface of the floating plate 9 is provided with a first groove 11 and a second groove 12, which are used to install the chip under test (DUT) and auxiliary devices, respectively. The auxiliary device is typically a diode with good temperature characteristics for auxiliary testing. In this embodiment, the DUT is a smart power switch under test, and the auxiliary device is a diode with good temperature characteristics. A first pin through-hole group is formed on the first groove 11, and a second pin through-hole group is formed on the second groove 12. The shapes of the first groove 11 and the second groove 12, as well as the corresponding first and second pin through-hole groups, can be set according to the model of the DUT and the selected auxiliary device. During testing, only the corresponding floating plate 9 needs to be adjusted or replaced.

[0100] The lower ends of the first welding pin group 6 and the second welding pin group 7 pass through the fixing pin plate 5 and are fixed by the fixing pin plate 5 respectively; the first groove 11 and the second groove 12 are respectively provided with pin through holes at the positions for placing the pins of the chip under test and the pins of the auxiliary device. When the floating plate 9 is pressed, the upper end of the first welding pin group 6 contacts the pin of the chip under test through the first pin through hole group, and the upper end of the second welding pin group 7 contacts the pin of the auxiliary device through the second pin through hole group. When the floating plate 9 is not pressed, the upper end of the first welding pin group 6 is disconnected from the pin of the chip under test, and the upper end of the second welding pin group 7 is disconnected from the pin of the auxiliary device.

[0101] Preferably, in this embodiment, the fixing needle plate 5 has a three-layer structure, which can more stably support the first welding needle group 6 and the second welding needle group 7 while meeting the high requirements of the testing device manufacturing process; in other embodiments of the present invention, the fixing needle plate 5 can also be set as a two-layer structure or other structures that can stably support the first welding needle group 6 and the second welding needle group 7.

[0102] like Figure 5 As shown, the heating module includes an upper cover 13, a heating element 14 disposed on the upper cover 13, and a heat-conducting component 15 disposed outside the heating element 14. During operation, the upper cover 13 and the base 4 can be tightly closed.

[0103] Preferably, in this embodiment, the upper cover 13 and the base 4 are hinged on one side, and a flap with a handle is provided on the outer wall of the other side of the upper cover 13. A metal post is provided on the outer wall of the base 4 at the position of the handle on the flap, so that the handle on the flap can be engaged with the metal post when the upper cover 13 and the base 4 are closed. In other embodiments of the present invention, other fastening structures or locking structures can also be used to achieve tight closure of the upper cover 13 and the base 4.

[0104] In this embodiment, the heating element 14 is made of ceramic, and the heat-conducting component 15 is made of brass, which can achieve better heating performance and better energy storage effect. In other embodiments of the present invention, heating elements 14 and heat-conducting components 15 made of other materials can also be used.

[0105] Meanwhile, in order to prevent the heating element 14 from overheating and burning the upper cover 13, a heat insulation sheet is provided between the heating element 14 and the upper cover 13 in this embodiment.

[0106] The heat-conducting component 15 is correspondingly positioned to the hollow groove structure of the base 4. A heat-insulating pin pressing tab 16 is provided on the surface of the heat-conducting component 15 at the position where the pin of the chip under test is mounted in the first groove 11. Since the pin of the chip under test cannot be heated, the pin pressing tab 16 needs to have a heat-insulating function and is made of heat-insulating material. Simultaneously, a heat-conducting protrusion 17 is provided on the surface of the heat-conducting component 15 at the position corresponding to the second groove 12. When the upper cover 13 and the base 4 are closed, the heat-conducting component 15, the pin pressing tab 16, and the heat-conducting protrusion 17 respectively contact the chip under test mounted in the first groove 11, the pin of the chip under test, and the auxiliary device mounted in the second groove 12, and respectively heat the chip under test and the auxiliary device through the heat-conducting component 15 and the heat-conducting protrusion 17. It is worth noting that the materials of the thermally conductive protrusion 17 and the thermally conductive component 15 must be the same in this invention. This arrangement allows the thermally conductive component 15 and the thermally conductive protrusion 17 to heat the chip under test and the auxiliary device respectively in the same heating environment. In this way, only one auxiliary device is needed to assist in the testing of multiple chips under test during the later testing, which improves the accuracy of the test and the consistency of the test results. At the same time, only the temperature characteristic curve of one auxiliary device needs to be obtained in the entire testing process, which greatly reduces the testing time and testing process and makes the test more convenient.

[0107] In order to better control the heating temperature of the heating element 14, the testing device 1 of the present invention is also provided with a first temperature sensor 18; the first temperature sensor 18 is used to detect the output temperature of the heating element 14 and to provide real-time feedback of the output temperature of the heating element 14 to the testing machine 2, so as to realize the adjustment of the heating temperature of the heating element 14.

[0108] Meanwhile, the testing machine 2 in this embodiment is also equipped with a display module to display the real-time output temperature of the heating element 14 detected by the first temperature sensor 18, so that the operator can adjust the heating temperature of the heating element 14 in real time according to the output temperature.

[0109] Preferably, as a backup sensor, the testing device 1 of the present invention is further provided with a second temperature sensor 19; the second temperature sensor 19 is used to detect the temperature of the chip under test in real time and to feed back the temperature of the chip under test to the testing machine 2 in real time. Since the chip under test generates its own heat during operation, the temperature collected in real time by the second temperature sensor 19 is lower than the actual over-temperature protection temperature and recovery temperature of the chip under test. The temperature collected by the second temperature sensor 19 can help verify the accuracy of the protection temperature and recovery temperature calculated by the auxiliary device.

[0110] When the testing device 1 is connected to the testing machine 2 for testing, in order to facilitate power-on and signal connection, a PCB board 8 is soldered onto the lower end surface of the fixed pin plate 5 in this embodiment. The PCB board 8 is also provided with multiple lead pins; the lower ends of the first soldering pin group 6 and the second soldering pin group 7 respectively pass through the PCB board 8. The multiple lead pins include lead pins for applying working voltage to the chip under test, lead pins for applying working voltage to auxiliary devices, lead pins for outputting the output voltage of the chip under test, and lead pins for outputting the clamping voltage of the auxiliary devices.

[0111] like Figure 6As shown, the testing device of the present invention further includes a first acquisition line S1, a second acquisition line S2, a third acquisition line S3, a fourth acquisition line S4, a first input line F1, a second input line F2, and a third input line F3. One end of the first acquisition line S1, one end of the second acquisition line S2, one end of the third acquisition line S3, and one end of the fourth acquisition line S4 are respectively connected to the four input terminals of the testing machine 2; one end of the first input line F1, one end of the second input line F2, and one end of the third input line F3 are respectively connected to the three output terminals of the testing machine 2. The other end of the first acquisition line S1 is connected to the corresponding pin on the PCB board 8 for outputting the output voltage of the chip under test, and is used to acquire the output voltage of the chip under test in real time through the first acquisition line S1 and transmit it to the test machine 2; the other end of the second acquisition line S2 is connected to the corresponding pin on the PCB board 8 for outputting the clamping voltage of the auxiliary device, and is used to acquire the clamping voltage of the auxiliary device in real time through the second acquisition line S2 and transmit it to the test machine 2; the other end of the third acquisition line S3 is connected to the first temperature sensor 18, and is used to acquire the output temperature of the heating element 14 in real time through the third acquisition line S3 and transmit it to the test machine 2; the other end of the fourth acquisition line S4 is connected to the corresponding pin on the PCB board 8 for connecting the second temperature sensor 19, and is used to acquire the temperature of the chip under test in real time through the fourth acquisition line S4 and transmit it to the test machine 2. The other end of the first input line F1 is connected to the heating element 14, and is used to apply a working voltage to the heating element 14 through the tester 2 for heating. In order to keep the circuit neat and uniform, in this embodiment, one end of the first input line F1 and one end of the third acquisition line S3 pass through the PCB board 8 and are connected to the tester 2. The other ends of the second input line F2 and the third input line F3 are respectively connected to the corresponding lead pins on the PCB board 8 for applying working voltage to the chip under test and the lead pins for applying working voltage to the auxiliary device, and are used to apply working voltage to the chip under test and the auxiliary device respectively through the tester 2.

[0112] One end of the adjustable load 3 is connected to the fourth output terminal of the tester 2, and the other end is connected to the chip under test (DUT). It is used to apply a corresponding load to the DUT installed in the integrated test device 1 according to the control of the tester 2. The tester 2 obtains the clamping voltage of the corresponding auxiliary device by controlling and detecting the output voltage of the DUT; then, combined with the temperature characteristic curve of the auxiliary device, it analyzes and obtains the protection temperature and recovery temperature of the DUT's over-temperature protection.

[0113] Among them, the test machine 2 uses formulas (5) and (6) to analyze and obtain the protection temperature t of the over-temperature protection of the chip under test. 保 and recovery temperature t 恢 :

[0114]

[0115]

[0116] Where t1, t2, t3, and t4 represent the temperature values ​​corresponding to the four points on the temperature characteristic curve of the auxiliary device, and v1, v2, v3, and v4 represent the clamping voltage values ​​corresponding to the four points on the temperature characteristic curve of the auxiliary device; t1 and t3 are less than the over-temperature protection temperature of the chip under test, and t2 and t4 are greater than the over-temperature protection temperature of the chip under test.

[0117] Alternatively, the testing machine 2 can analyze and obtain the over-temperature protection temperature t of the chip under test using formulas (7) and (8), respectively. 保 and recovery temperature t 恢 :

[0118]

[0119]

[0120] Where t5 and t6 represent the temperature values ​​corresponding to two points on the temperature characteristic curve of the auxiliary device, and v5 and v6 represent the clamping voltage values ​​corresponding to two points on the temperature characteristic curve of the auxiliary device. t5 is less than the over-temperature protection temperature of the chip under test, and t6 is greater than the over-temperature protection temperature of the chip under test.

[0121] Taking intelligent power switches as an example, the usage method of the above-mentioned batch intelligent power switch rapid over-temperature testing system is as follows:

[0122] 1. Select a diode with good temperature characteristics as an auxiliary device, and test and obtain the temperature characteristic curve of the auxiliary device;

[0123] 2. The testing machine 2 applies a working voltage to the chip under test mounted on the first groove 11 via the second input line, and applies a working voltage to the auxiliary device mounted on the second groove 12 via the third input line. The testing machine 2 also sends a working command to the adjustable load 3, causing the adjustable load 3 to apply a corresponding load to the chip under test. Simultaneously, the testing machine 2 applies a working voltage to the heating element 14 via the first input line, and the heat-conducting component 15 and the heat-conducting protrusion 17 continuously heat the chip under test and the auxiliary device in the same heating environment. During testing, the temperature applied to the heating element 14 can be adjusted based on the real-time output temperature detected by the first temperature sensor 18. Preferably, in this embodiment, the display module on the testing machine 2 can display the real-time output temperature and its curve of the heating element 14, facilitating real-time adjustment of the heating temperature of the heating element 14 by the operator based on the output temperature.

[0124] 3. Collect the clamping voltage u1 of the auxiliary diode under over-temperature protection conditions.

[0125] The second acquisition line acquires the output voltage of the chip under test in real time and outputs it to the tester 2 until the tester 2 detects that the output voltage of the chip under test is 0, which means it enters the over-temperature protection state. At this time, the tester 2 controls the heat-conducting component 15 and the heat-conducting protrusion 17 to stop heating the chip under test and auxiliary devices, and acquires the clamping voltage u1 of the auxiliary device at this time through the third acquisition line and outputs it to the tester 2.

[0126] 4. Collect the clamping voltage u2 of the auxiliary diode under the over-temperature protection recovery state.

[0127] The second acquisition line acquires the output voltage of the chip under test in real time and outputs it to the test machine 2. When the test machine 2 detects that the output voltage of the chip under test is greater than 0, it acquires the clamping voltage u2 of the auxiliary device at this time through the third acquisition line and outputs it to the test machine 2.

[0128] 5】Based on the temperature characteristic curve of the auxiliary diode obtained in step 1】, and combined with the clamping voltage values ​​u1 and u2, the tester 2 obtains the temperature value t corresponding to the clamping voltage u1 using the above formula. 保 The temperature value t corresponding to the clamping voltage u2 恢 , with temperature value t 保 The temperature value t is used as the protection temperature for the over-temperature protection of the intelligent power switch under test. 恢 This serves as the recovery temperature for the over-temperature protection of the intelligent power switch under test.

[0129] 6】Disconnect the working voltage applied to the auxiliary device of the chip under test by the test machine 2 in sequence, disconnect the load applied to the chip under test, take out the chip under test, put in a new chip as the chip under test, and perform the test on the next chip under test. Repeat steps 2】-5】 until the protection temperature and recovery temperature of the batch of chips under test over-temperature protection are obtained.

[0130] The above description is only used to illustrate the technical solutions of the present invention, and is not intended to limit them. For those skilled in the art, modifications can be made to the specific technical solutions described in the above embodiments, or equivalent substitutions can be made to some of the technical features. However, these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions protected by the present invention.

Claims

1. A method for rapid over-temperature testing of batch chips, characterized in that, Includes the following steps:

1. Select a diode with good temperature characteristics as an auxiliary device, and test and obtain the temperature characteristic curve of the auxiliary device; 2. Apply a load to the chip under test, and simultaneously apply working voltages to the chip under test and the auxiliary device, while continuously heating the chip under test and the auxiliary device under the same heating environment; 3. Collect the clamping voltage of the auxiliary device under over-temperature protection conditions. ; The output voltage of the chip under test (DUT) is detected. When the output voltage of the DUT is detected to be 0, heating of the DUT and auxiliary devices is stopped, and the clamping voltage of the auxiliary devices at this time is collected. ; 4. Collect the clamping voltage of the auxiliary device under the over-temperature protection recovery state. ; Continue monitoring the output voltage of the chip under test. When the output voltage of the chip under test is detected to be greater than 0, acquire the clamping voltage of the auxiliary device at this time. ; 5. Based on the temperature characteristic curve of the auxiliary device obtained in step 1, combined with the clamping voltage value... and clamping voltage value Obtain the clamping voltage Corresponding temperature value and clamping voltage Corresponding temperature value Based on temperature value The temperature value is used as the over-temperature protection temperature for the chip under test. As the recovery temperature for the over-temperature protection of the chip under test; 6】Disconnect the operating voltage applied to the chip under test and the auxiliary device in sequence, disconnect the load applied to the chip under test, remove the chip under test, put in a new chip as the chip under test, and repeat steps 2】-5】 until the protection temperature and recovery temperature of the batch of chips under test over-temperature protection are obtained.

2. The method for rapid over-temperature testing of batch chips according to claim 1, characterized in that, Step 5 is as follows: 5.1】Take four points on the temperature characteristic curve of the auxiliary device, and obtain the corresponding abscissa temperature value and ordinate clamping voltage value for these four points. The temperature values ​​of the four points are denoted as follows: , , and The clamping voltage values ​​corresponding to the four points are denoted as follows: , , and ;in, and Less than the over-temperature protection temperature of the chip under test, and It is greater than the over-temperature protection temperature of the chip under test; 5.2】The protection temperature and recovery temperature of the chip under test for over-temperature protection are obtained by the following formulas. : ； 。 3. The method for rapid over-temperature testing of batch chips according to claim 2, characterized in that, Step 5 is as follows: 5.1】Take two points on the temperature characteristic curve of the auxiliary device, and obtain the corresponding abscissa temperature value and ordinate clamping voltage value. The temperature values ​​of the two points are denoted as follows: , The clamping voltage values ​​at the two points are denoted as follows: , ;in, It is lower than the over-temperature protection temperature of the chip under test. It is greater than the over-temperature protection temperature of the chip under test; 5.2】The over-temperature protection temperature of the chip under test is obtained by the following formula. and recovery temperature : ； 。 4. A chip rapid over-temperature testing system, used to implement the batch chip rapid over-temperature testing method according to any one of claims 1-3, characterized in that: It includes an integrated testing device (1), a testing machine (2), and an adjustable load (3); The integrated testing device (1) includes an installation module and a heating module; The installation module is used to install the chip under test and auxiliary devices, and to realize the signal transmission between the chip under test, auxiliary devices and the test machine (2); the installation module includes a base (4), a fixing pin plate (5), a first welding pin group (6) and a second welding pin group (7). The base (4) is a hollow groove structure, and a floating plate (9) is installed inside the hollow groove; The floating plate (9) can move elastically in the vertical direction relative to the base (4). Its upper surface is provided with a first groove (11) and a second groove (12), which are used to install the chip under test and auxiliary devices, respectively. A first pin through hole group is opened on the first groove (11), and a second pin through hole group is opened on the second groove (12). The fixing needle plate (5) is located below the base (4), and the upper end face of the fixing needle plate (5) is fixedly connected to the lower end face of the base (4); The lower ends of the first welding pin group (6) and the second welding pin group (7) pass through the fixing pin plate (5) and are fixed by the fixing pin plate (5); when the floating plate (9) is pressed, the upper end of the first welding pin group (6) contacts the pin of the chip under test through the first pin through hole group, and the upper end of the second welding pin group (7) contacts the pin of the auxiliary device through the second pin through hole group. When the floating plate (9) is not pressed, the first welding pin group (6) and the second welding pin group (7) disconnect from the pin of the chip under test and the pin of the auxiliary device, respectively. The heating module is used to heat the chip under test and auxiliary devices installed on the mounting module and to place them in the same heating environment. The heating module includes an upper cover (13), a heating element (14) disposed on the upper cover (13), and a heat-conducting component (15) disposed outside the heating element (14). The heat-conducting component (15) is correspondingly arranged with the hollow groove structure of the base (4). The surface of the heat-conducting component (15) is provided with heat-conducting protrusions (17) and pin pressing pieces (16) with heat insulation function. When the top cover (13) and the base (4) are closed, the heat-conducting component (15), the pin pressing pieces (16) and the heat-conducting protrusions (17) respectively contact the chip under test installed in the first groove (11), the pin of the chip under test and the auxiliary device installed in the second groove (12), and simultaneously press down the floating plate (9). One end of the adjustable load (3) is connected to one output terminal of the test machine (2), and the other end is connected to the chip under test, so as to apply a corresponding load to the chip under test according to the control of the test machine (2); The two input terminals of the test machine (2) are used to connect the voltage output terminal of the chip under test and the voltage output terminal of the auxiliary device, respectively. The three output terminals of the test machine (2) are used to provide working voltage to the heating module, the chip under test and the auxiliary device, respectively. The test machine (2) is also used to obtain the clamping voltage of the corresponding auxiliary device by controlling and detecting the output voltage of the chip under test, and then analyze the protection temperature and recovery temperature of the chip under test over-temperature protection by combining the temperature characteristic curve of the auxiliary device.

5. The chip rapid over-temperature testing system according to claim 4, characterized in that: The testing machine (2) obtains the over-temperature protection temperature of the chip under test using the following formula. and recovery temperature : ； ； in, , , and These represent the temperature values ​​corresponding to four points on the temperature characteristic curve of the auxiliary device. , , and These represent the clamping voltage values ​​corresponding to four points on the temperature characteristic curve of the auxiliary device; and It is lower than the over-temperature protection temperature of the chip under test. and It is greater than the over-temperature protection temperature of the chip under test; Alternatively, the testing machine can obtain the over-temperature protection temperature of the chip under test using the following formulas. and recovery temperature : ； ； in, , These represent the temperature values ​​corresponding to two points on the temperature characteristic curve of the auxiliary device. , These represent the clamping voltage values ​​corresponding to two points on the temperature characteristic curve of the auxiliary device. It is lower than the over-temperature protection temperature of the chip under test. It is greater than the over-temperature protection temperature of the chip under test.

6. A chip rapid over-temperature testing system according to claim 4 or 5, characterized in that: It also includes a first temperature sensor (18); The first temperature sensor (18) is used to detect the output temperature of the heating element (14) and to provide real-time feedback of the output temperature of the heating element (14) to the testing machine (2).

7. The chip rapid over-temperature testing system according to claim 6, characterized in that: It also includes a first acquisition line, a second acquisition line, a third acquisition line, a PCB board (8), a first input line, a second input line, and a third input line; One end of the first acquisition line, one end of the second acquisition line, and one end of the third acquisition line are respectively connected to the three input terminals of the test machine (2); one end of the first input line, one end of the second input line, and one end of the third input line are respectively connected to the three output terminals of the test machine (2); The PCB board (8) is fixedly connected to the lower end face of the fixed pin plate (5), and the lower ends of the first welding pin group (6) and the second welding pin group (7) pass through the PCB board (8) respectively; a plurality of lead pins are provided on the PCB board (8); The other end of the first acquisition line is connected to the lead pin on the PCB board (8) for outputting the output voltage of the chip under test, and is used to acquire the output voltage of the chip under test in real time through the first acquisition line and transmit it to the test machine (2). The other end of the second acquisition line is connected to the lead pin on the PCB board (8) for outputting the clamping voltage of the auxiliary device, and is used to acquire the clamping voltage of the auxiliary device in real time through the second acquisition line and transmit it to the test machine (2). The other end of the third acquisition line is connected to the first temperature sensor (18), which is used to acquire the output temperature of the heating element (14) in real time through the third acquisition line and transmit it to the test machine (2). The other end of the first input line is connected to a heating element (14) for applying a working voltage to the heating element (14) via a tester (2) to heat it. The other end of the second input line is connected to a pin on the PCB board (8) for applying working voltage to the chip under test; The other end of the second input line is connected to a lead pin on the PCB board (8) for applying working voltage to the auxiliary device.

8. The chip rapid over-temperature testing system according to claim 7, characterized in that: It also includes a second temperature sensor (19) and a fourth acquisition line; The second temperature sensor (19) is used to collect the temperature of the chip under test in real time; One end of the fourth acquisition line is connected to the second temperature sensor (19), and the other end is connected to the fourth input terminal of the test machine (2).

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