Contact hole defect database establishment method, contact hole defect detection method and system
By establishing a contact hole defect database and utilizing electron beam scanning and transmission electron microscopy section sampling techniques, the problem of limited contact hole defect detection functionality was solved, achieving efficient and accurate defect identification and location.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TIANFU XINGLONG LAKE LAB
- Filing Date
- 2023-03-28
- Publication Date
- 2026-07-21
AI Technical Summary
Existing technologies for contact hole defect detection have limited functionality and narrow application scenarios, making it difficult to meet the demand for efficient and accurate defect detection in integrated circuit manufacturing.
A database of contact hole defects is established. Voltage contrast signals are obtained by electron beam scanning, converted into grayscale images to identify defects, and the ratio of fitted curves is calculated as a defect category parameter. Combined with transmission electron microscopy section sampling, a defect category database is established to achieve automated defect identification.
It achieves efficient automatic identification of contact hole defects, with fast detection speed, good repeatability, and a defect detection rate and positioning accuracy of over 95%.
Smart Images
Figure CN116342544B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of integrated circuit technology, specifically to a method for establishing a contact hole defect database, a method for detecting contact hole defects, and a system thereof. Background Technology
[0002] In the fabrication of semiconductor devices, contact holes play an important role in the device structure as channels for interconnecting multilayer metal layers and connecting the active region of the device with external circuits.
[0003] Tungsten contact via filling is a crucial step in integrated circuit manufacturing. It is highly susceptible to defects such as voids at the bottom of the vias due to tungsten deficiency, severely impacting product yield. Therefore, wafer defect inspection is essential to detect problems early and avoid significant yield losses. Defect inspection methods are generally divided into offline and online inspection. Offline inspection involves slicing the wafer for observation and analyzing device structure and internal material defects using techniques such as FIB (Film Injection Block) and transmission electron microscopy (TEM). However, it is time-consuming, inefficient, and destructive to the wafer, making it a sampling method unsuitable for process inspection in wafer manufacturing. In contrast, online inspection allows for comprehensive inspection without damaging the wafer, offering advantages such as high efficiency and high defect location accuracy. Initially, online defect inspection involved manual visual inspection combined with optical microscopy to select points on the wafer for defect detection. This method has low accuracy and efficiency, and is only suitable for processes with linewidths of micrometers or higher.
[0004] With the explosive advancement of domestic integrated circuit manufacturing technology nodes, a large number of new materials and processes are being widely applied in chip manufacturing. Simultaneously, the trend towards miniaturization of device dimensions has led to a bottleneck in existing optical defect detection technologies. Electron beam scanning defect detection technology, as a novel defect detection method, is gradually becoming the mainstream technology for in-line wafer defect detection. However, current industry research on the application of electron beam scanning defect detection mainly focuses on electrical defect detection, specifically detecting whether there are open or short circuits between the metal surface and the substrate device. The difference between the defect and the reference object is a difference between "1" and "0," which manifests as a difference between "continuity" and "discontinuity" in circuitry. This approach suffers from limitations such as limited detection functionality and narrow application scenarios. Summary of the Invention
[0005] This application provides a method for establishing a contact hole defect database, a method for detecting contact hole defects, and a system, aiming to solve the technical problems of limited contact hole defect detection function and narrow application scenarios in the prior art.
[0006] On the one hand, the method for establishing a contact hole defect database provided in this application includes the following steps:
[0007] S1. Provide a sample with contact holes;
[0008] S2. Perform defect detection on the contact holes of the sample, obtain the first detection information for each contact hole, and identify the contact holes with defects through the first detection information;
[0009] S3. Calculate the defect category parameter based on the first detection information of the defective contact hole;
[0010] S4. Perform slice sampling on the defective contact holes to identify the defect category of each contact hole;
[0011] S5. Establish a contact hole defect category database based on the correspondence between defect category parameters and defect categories.
[0012] According to an embodiment of the first aspect of this application, the first detection information includes a voltage contrast signal, and step S2 includes:
[0013] An electron beam is used to scan the contact holes of the sample to obtain the voltage contrast signal of each contact hole, and the contact holes with defects are identified by the voltage contrast signal.
[0014] According to any of the foregoing embodiments of the first aspect of this application, identifying a defective contact hole by means of a voltage contrast signal includes:
[0015] The voltage contrast signal of the contact hole is converted into a grayscale image. If the grayscale image is dark, the corresponding contact hole is marked as a defective contact hole.
[0016] According to any of the foregoing embodiments of the first aspect of this application, the first detection information is a two-dimensional data array obtained by two-dimensional scanning of the contact hole, and step S3 includes:
[0017] The first detection information of the scanning points along the diameter direction of the contact hole is selected for fitting to obtain the fitting curve;
[0018] Calculate the ratio between the area at the peak of the fitted curve and the area of the entire fitted curve; this ratio is the defect category parameter.
[0019] According to any of the foregoing embodiments of the first aspect of this application, the defect categories identified in step S4 include at least a first type of defect and a second type of defect.
[0020] Step S5 includes:
[0021] The first parameter range is determined based on the defect category parameter of the contact hole with the first type of defect. The first parameter range corresponds to the first type of defect.
[0022] The range of the second parameter is determined based on the defect category parameter of the contact hole with the second type of defect. The range of the second parameter corresponds to the second type of defect.
[0023] Enter the first parameter range, the first type of defect, the second parameter range, and the second type of defect into the contact hole defect database.
[0024] According to any of the foregoing embodiments of the first aspect of this application, the first type of defect is a crack-type defect with a first parameter range of 5% to 30%, and the second type of defect is a hole-type defect with a second parameter range of 30% to 100%.
[0025] According to any of the foregoing embodiments of the first aspect of this application, step S1 includes:
[0026] A sample with contact holes is provided, wherein the sample surface is positively charged by X-ray treatment.
[0027] According to any of the foregoing embodiments of the first aspect of this application, the contact holes of the sample hole are scanned using a charge enhancement mode of electron beam detection.
[0028] Secondly, the contact hole defect detection method provided in the embodiments of this application includes the following steps:
[0029] P1. Perform defect detection on the contact holes of the sample to be tested to obtain the first detection information;
[0030] P2. Calculate the defect category parameters based on the first detection information;
[0031] P3. Based on the defect category parameters, query the contact hole defect category database established by the contact hole defect database establishment method described above, and identify the contact holes with defects on the sample to be tested and their defect categories.
[0032] Thirdly, the contact hole defect detection system provided in the embodiments of this application includes:
[0033] The contact hole defect category database is established using the contact hole defect database establishment method described above.
[0034] The defect detection module is used to detect defects in the contact holes of the sample to be tested, thereby obtaining the first detection information.
[0035] The calculation module is used to calculate the defect category parameters based on the first detection information.
[0036] The query module is used to query the contact hole defect category database based on the defect category parameter, thereby identifying the contact holes with defects on the sample to be tested and the defect category.
[0037] The contact hole defect database establishment method of this application embodiment can collect a large amount of defect data by inspecting a large number of wafers, conduct big data training, and optimize the defect category recognition algorithm. Ultimately, it can achieve the goal of high automatic identification rate of contact hole defects, fast detection speed, good detection repeatability, and defect detection rate and defect location accuracy of more than 95%.
[0038] The contact hole defect detection method of this application embodiment can detect the first detection information of the contact hole online, calculate the defect category parameters, and then match them with the contact hole defect category database to identify the defective contact hole and the defect category of the contact hole online. It has high detection efficiency and accurate detection results. Attached Figure Description
[0039] Figure 1 This is a schematic diagram of the contact hole structure involved in the embodiments of this application;
[0040] Figure 2 This is a flowchart of a method for establishing a contact hole defect database according to an embodiment of this application;
[0041] Figure 3a This is a schematic diagram of the first detection information detected using the contact hole defect database establishment method provided in an embodiment of this application;
[0042] Figure 3b This is a schematic diagram of converting the first detection information into a grayscale image;
[0043] Figure 4a This is a schematic diagram of the first detection information detected using the contact hole defect database establishment method provided in an embodiment of this application;
[0044] Figure 4b Yes Figure 4a A schematic diagram of the fitting curve obtained by fitting the first detection information shown;
[0045] Figure 5a This is a schematic diagram showing information about a defect-free contact hole. Figure 5b This is a schematic diagram showing information about a contact hole with crack-type defects; Figure 5c This is a schematic diagram of information about a contact hole with a hole-type defect; where 8 represents the first detection information, 7 represents the fitting curve obtained by fitting the first detection information, 9 represents the surface charge distribution of the contact hole, and 10 represents the contact hole.
[0046] Figure 6 This is a flowchart of a contact hole defect detection method provided in an embodiment of this application;
[0047] Figure 7 This is a schematic diagram of the structure of a contact hole defect detection system provided in an embodiment of this application. Detailed Implementation
[0048] The features and exemplary embodiments of this application will now be described in detail with reference to the accompanying drawings. To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are intended only to explain this application and not to limit it. For those skilled in the art, this application can be implemented without some of these specific details. The following description of the embodiments is merely to provide a better understanding of this application by illustrating examples.
[0049] The flowchart shown in the attached diagram is for illustrative purposes only and does not necessarily include all content and operations / steps, nor does it necessarily have to be performed in the order described. For example, some operations / steps can be broken down, combined, or partially merged, so the actual execution order may change depending on the actual situation.
[0050] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.
[0051] In semiconductor devices, such as Figure 1 The contact hole 1 shown can be formed by tungsten deposition. Before deposition, a TiN layer 3 is deposited first, followed by a Ti layer 2, and an insulating dielectric layer 4 is placed on the outside. The technical solution of this application can be applied to the defect detection stage after the contact hole CMP process.
[0052] The contact hole referred to in this disclosure is a contact hole formed after filling it with a conductive material such as tungsten, used to connect different metal layers. The contact hole defect referred to in this disclosure refers to a filling defect formed after filling the contact hole with a conductive material. This disclosure uses a tungsten-filled contact hole as an example for illustration.
[0053] Please see Figure 2 The first aspect of this application provides a method for establishing a contact hole defect database, the method comprising steps S1 to S5.
[0054] S1. Provide a sample with contact holes.
[0055] The sample here can be one containing, for example Figure 1 The wafer shown has multiple chips on it, and each chip has multiple contact holes filled with tungsten to connect different metal layers on the chip.
[0056] S2. Perform defect detection on the contact holes of the sample to obtain the first detection information for each contact hole, and identify the contact holes with defects through the first detection information.
[0057] The defect detection here can utilize some detection methods that can initially identify defective and non-defective contact holes, and perform preliminary classification of contact holes.
[0058] In some implementations, please refer to Figure 3a The first detection information can be a voltage contrast signal, which can be obtained by scanning the contact hole with an electron beam to identify whether there are defects in the contact hole. Voltage contrast is the contrast formed due to the difference in surface potential of the sample during electron beam scanning. By using a signal sensitive to the surface potential state of the sample, such as secondary electrons, as the modulation signal of the cathode ray tube, a voltage contrast image can be obtained.
[0059] Specifically, an electron beam is used to scan the contact holes of the sample to obtain the voltage contrast signal of each contact hole. The contact holes with defects are then identified using the voltage contrast signal. During the scanning, the electron beam performs a two-dimensional scan of the contact holes. After scanning one contact hole, a voltage contrast signal of a three-dimensional curved surface is obtained.
[0060] For further details, please refer to Figure 3b The voltage contrast signal of the contact hole is converted into a grayscale image. If the grayscale image is dark, the corresponding contact hole is marked as a defective contact hole. Figure 3b Number 6 indicates a defective contact hole; if the grayscale image is bright field, the corresponding contact hole is marked as a defect-free contact hole. Figure 3b Number 5 indicates a defect-free contact hole. Each scan point of the contact hole corresponds to a voltage value. By converting the voltage values of each scan point of the contact hole into grayscale values, the voltage contrast signal can be converted into a grayscale image. By observing the grayscale image, it can be determined whether the contact hole has a defect. Of course, it is also possible to determine whether the corresponding contact hole has a defect directly from the voltage contrast signal without converting it into a grayscale image.
[0061] S3. Calculate the defect category parameter using the first detection information of the defective contact hole.
[0062] Further calculations on the first detection information can yield defect category parameters that can identify the defect category.
[0063] In some implementations, when the first detection information is a voltage contrast signal, further calculations on the voltage contrast signal can yield defect category parameters that can identify the defect category.
[0064] Specifically, the voltage contrast signals of the scanning points along the diameter of the contact hole are fitted to obtain a fitting curve. Since the contact hole is scanned in two dimensions, the final data is a two-dimensional data array. When analyzing the defect categories of the contact hole, it is often sufficient to analyze only one data line to meet the requirements of identification accuracy and reduce computational complexity. Therefore, in this embodiment, the data of the scanning points located on the same diameter line are selected for further calculation and analysis, and the selected data points are fitted to obtain a fitting curve. Of course, data points located on any straight line can be selected instead of those on the diameter line. When selecting such a straight line, it is necessary to ensure the consistency of each contact hole. For example, scanning points on a straight line offset by the same diameter distance in the same direction can be selected. In this embodiment, the voltage contrast signals of the scanning points along the diameter of the contact holes that have been initially identified as having defects are fitted to obtain a fitting curve; it is not necessary to perform this fitting curve step for every contact hole, which can reduce the amount of computation.
[0065] The ratio D / S is calculated as the area at the peak of the fitted curve to the area S of the entire fitted curve. This ratio represents the defect category parameter. Different defect categories have different peak shapes; for example, crack-type defects have narrow peaks, while hole-type defects have wider peaks. By calculating the ratio of the peak area to the area of the fitted curve and performing statistical analysis on the defect category parameters for various defects, the correspondence between the defect types of contact holes and the defect category parameters can be identified. Please refer to [link to relevant documentation]. Figure 4a and Figure 4b , Figure 4a For the voltage contrast signal of the scanning points along a diameter of the contact hole, Figure 4a The signal point values are fitted to obtain, as shown below. Figure 4b The fitted curve shown is given, where S represents the area of the entire curve and D represents the area of the peak. Figure 4a In this study, signal values from regions outside the tungsten-filled area are not included in the fitted data range.
[0066] S4. Perform slice sampling on the defective contact holes to identify the defect category of each contact hole.
[0067] To establish the correspondence between defect category parameters and defect categories, destructive testing of contact holes can be performed using methods such as transmission electron microscopy section sampling to accurately identify the defect category of the contact hole.
[0068] Specifically, the contact holes are first sliced, and then the slices are placed on a microscope for observation to identify the type of contact hole defects. In this way, the defect type and defect type parameters of each defective contact hole can be obtained.
[0069] S5. Establish a contact hole defect category database based on the correspondence between defect category parameters and defect categories.
[0070] After obtaining the defect category and defect category parameters for each defective contact hole, the correspondence between the defect category and the defect category parameters can be analyzed to establish a contact hole defect category database. This database includes two sets of data: one set of defect category data and the other set of defect category parameter data. There is a one-to-one correspondence between the defect category data and the defect category parameter data.
[0071] In some implementations, after statistical analysis of the defect categories of the contact holes, the defect categories are divided into at least two categories, namely a first defect category and a second defect category. The defect category parameters of contact holes with first-category defects fall within the first parameter range, and the defect category parameters of contact holes with second-category defects fall within the second parameter range.
[0072] Specifically, step S5 includes:
[0073] The first parameter range is determined based on the defect category parameter of the contact hole with the first type of defect, and the first parameter range corresponds to the first type of defect;
[0074] The range of the second parameter is determined based on the defect category parameter of the contact hole with the second type of defect, and the range of the second parameter corresponds to the second type of defect;
[0075] Enter the first parameter range, the first type of defect, the second parameter range, and the second type of defect into the contact hole defect database.
[0076] By performing steps S2 to S4 on a large number of wafers, a large amount of defect category parameter data and defect category data can be obtained, which can improve the accuracy of identifying defect categories using the contact hole defect category database.
[0077] In some implementations, the first type of defect is a crack-type defect with a first parameter range of 5% to 30%, and the second type of defect is a hole-type defect with a second parameter range of 30% to 100%.
[0078] The values of the first parameter range and the second parameter range can be determined based on the aperture and aspect ratio of the contact hole. Contact holes with the same aperture and aspect ratio have the same first parameter range and second parameter range. Depending on the aperture and aspect ratio of the contact hole, the first parameter range and the second parameter range can differ from the ranges in the above embodiments. For example, the first and second parameter ranges can be 2%–25%, 25%–100%, or 4%–27%, 27%–100%, or 6%–31%, 31%–100%, etc.
[0079] In some implementations, to improve the accuracy of defect detection of contact holes, step S1 includes:
[0080] A sample with contact holes is provided, wherein the sample surface is positively charged by X-ray treatment. Since charge concentration occurs at the defect sites of the contact holes, X-ray treatment allows for a greater voltage contrast signal during subsequent electron beam scanning. In this embodiment, by using X-ray irradiation of the sample and scanning the sample in a charge-enhanced mode for defect detection using electron beam scanning, the problem of low detection accuracy is solved because although the Ti / TiN bonding barrier layer on the sidewall of the contact hole is not abnormal, the surface metal and the substrate remain conductive during electron beam defect detection, resulting in no obvious voltage contrast signal detected at the defect location.
[0081] In some implementations, to improve the accuracy of defect detection in contact holes, a charge-enhanced mode of electron beam detection is used to scan the contact holes of the sample holes. Using an electron beam defect detection charge-enhanced mode to scan and detect defects in contact holes can further amplify the voltage contrast signal of the metal contact holes.
[0082] Figures 5a to 5c The diagram shows different contact holes. In the diagram, 8 represents the voltage contrast signal (the voltage contrast signal of the scanning points distributed along the diameter direction of the contact hole), 9 represents the surface charge distribution, and 7 represents the fitting curve obtained after fitting the voltage contrast signal. Figure 5a The contact holes in the middle are free of defects. Figure 5b The contact holes in the middle have crack-type defects. Figure 5c The contact holes in the [material] exhibit void-type defects. From... Figure 5a It can be seen that the surface charge distribution of the defect-free contact hole is uniform, and the voltage contrast signal values corresponding to the contact hole openings differ little, resulting in a relatively flat fitting curve. Therefore, the calculated defect category parameter values are small. Figure 5b It can be seen that the surface charge distribution of the contact hole with crack-type defects is uneven, there is charge concentration at the crack, the voltage contrast signal has a peak, and the corresponding fitting curve has a small and steep peak width. The calculated defect category parameter value is larger than that of the contact hole without defects. Figure 5c It can be seen that the surface charge distribution of contact holes with pore-type defects is uneven, with charge concentration at the pore peaks, resulting in peaks in the voltage contrast signal and a large peak width in the corresponding fitted curve. Consequently, the calculated defect category parameter values are larger than those for contact holes with crack-type defects. The contact hole defect database establishment method of this application provides a contact hole defect category database, which enables automatic identification of contact hole defects with high accuracy.
[0083] The contact hole defect database establishment method of this application collects a large amount of defect data by inspecting a large number of wafers, performs big data training, and optimizes the defect category recognition algorithm. Ultimately, it achieves the goal of high automatic identification rate of contact hole defects, fast detection speed, good detection repeatability, and defect detection rate and defect location accuracy of more than 95%.
[0084] Of course, the first detection information can also be other signals besides the voltage contrast signal. Correspondingly, the equipment used to scan and detect the contact hole will also change, but the principle of calculating the defect category parameter is the same as that in the above implementation.
[0085] Optionally, the first detection information can also be ultrasonic reflection signals. For example, an ultrasonic flaw detector can be used to perform a two-dimensional scan on each contact hole to obtain ultrasonic reflection signals, and the contact holes with defects can be preliminarily identified through the ultrasonic reflection signals; similarly, the ultrasonic reflection signal values of the scanning points located on the same diameter are selected for fitting to obtain a fitting curve; then, the defect category parameter is calculated by calculating the ratio of the curve area at the peak to the area of the entire fitting curve.
[0086] Optionally, the first detection information can also be the signal energy intensity value emitted after scanning the contact hole with penetrating rays. For example, each contact hole can be scanned in two dimensions using penetrating rays to obtain the emitted signal energy intensity value, thereby initially identifying contact holes with defects; similarly, the ultrasonic reflection signal values of scanning points located on the same diameter are selected for fitting to obtain a fitting curve; then, the defect category parameter is calculated by calculating the ratio of the curve area at the peak to the area of the entire fitting curve.
[0087] Please see Figure 6 The second aspect of this application provides a method for detecting contact hole defects, including steps P1 to P3.
[0088] P1. Perform defect detection on the contact holes of the sample to be tested to obtain initial detection information. This step can be performed online to improve detection speed.
[0089] P2. Calculate the defect category parameters based on the first detection information. The defect category parameters are parameters that can classify and identify defects in the contact holes.
[0090] P3. Based on the defect category parameters, query the contact hole defect category database established using the method described above to identify the defective contact holes and their defect categories on the sample to be tested. Each calculated defect category parameter corresponds to a defect category; by querying and matching, the defect category of the currently tested contact hole can be determined.
[0091] The contact hole defect detection method of this application embodiment can detect the first detection information of the contact hole online, calculate the defect category parameters, and then match them with the contact hole defect category database to identify the defective contact hole and the defect category of the contact hole online. It has high detection efficiency and accurate detection results.
[0092] Please see Figure 7 A third aspect of this application provides a contact hole defect detection system, including a contact hole defect category database, a defect detection module, a calculation module, and a query module.
[0093] The contact hole defect category database is established using the contact hole defect database establishment method described above. The contact hole defect category database includes multiple sets of data, each set containing defect categories and the parameter range of the corresponding defect category parameters. The contact hole defect category database can be built into a computer device connected to the defect detection module.
[0094] The defect detection module is used to detect defects in the contact holes of the sample to be tested, thereby obtaining the first detection information; the defect detection module can be an electron beam scanning defect detection device or other equipment that can be used to detect defects in contact holes.
[0095] The calculation module is used to calculate the defect category parameters based on the first detection information. The calculation module can be built into a computer device connected to the defect detection module. The defect detection module transmits the first detection information to the computer device, and the calculation module in the computer device calculates the defect category parameters based on the obtained first detection information.
[0096] The query module is used to search the contact hole defect category database based on defect category parameters and match them with the parameter ranges of the defect category parameters in the database to identify the contact holes with defects on the sample to be inspected and their defect categories. The query module can also be built into a computer device connected to the defect detection module.
[0097] Of course, the contact hole defect category database, defect detection module, calculation module, and query module can all be built into the same device.
Claims
1. A method for establishing a contact hole defect database, characterized in that, Includes the following steps: S1. Provide a sample with contact holes; S2. Perform defect detection on the contact holes of the sample, obtain the first detection information for each contact hole, and identify the contact holes with defects through the first detection information; S3. Calculate the defect category parameter using the first detection information of the defective contact hole, including the following steps: select the voltage contrast signal of the scanning point along the diameter direction of the contact hole for fitting to obtain a fitting curve; calculate the ratio between the area at the peak of the fitting curve and the area of the entire fitting curve, where the ratio is the defect category parameter. S4. Perform slice sampling on the contact holes with defects to identify the defect category of each contact hole; the identified defect categories include at least the first type of defect and the second type of defect; S5. Establish a contact hole defect category database based on the correspondence between the defect category parameters and the defect categories, including the following steps: determining a first parameter range based on the defect category parameters of contact holes with first-type defects, wherein the first parameter range corresponds to the first-type defects; determining a second parameter range based on the defect category parameters of contact holes with second-type defects, wherein the second parameter range corresponds to the second-type defects. The first type of defect is a crack-type defect, with the first parameter ranging from 5% to 30%; the second type of defect is a hole-type defect, with the second parameter ranging from 30% to 100%. Enter the first parameter range, the first type of defect, the second parameter range, and the second type of defect into the contact hole defect database.
2. The method for establishing a contact hole defect database according to claim 1, characterized in that, The first detection information includes a voltage contrast signal, and step S2 includes: An electron beam is used to scan the contact holes of the sample to obtain the voltage contrast signal of each contact hole, and the contact holes with defects are identified by the voltage contrast signal.
3. The method for establishing a contact hole defect database according to claim 2, characterized in that, The method of identifying defective contact holes through voltage contrast signals includes: The voltage contrast signal of the contact hole is converted into a grayscale image. If the grayscale image is dark, the corresponding contact hole is marked as a defective contact hole.
4. The method for establishing a contact hole defect database according to claim 1, characterized in that, Step S1 includes: A sample with contact holes is provided, wherein the sample surface is positively charged by X-ray treatment.
5. The method for establishing a contact hole defect database according to claim 2, characterized in that, The contact holes of the sample wells were scanned using a charge-enhanced mode with electron beam detection.
6. A method for detecting contact hole defects, characterized in that, Includes the following steps: P1. Perform defect detection on the contact holes of the sample to be tested to obtain the first detection information; P2. Calculate the defect category parameters based on the first detection information; P3. Based on the defect category parameters, query the contact hole defect category database established by the contact hole defect database establishment method as described in any one of claims 1 to 5, and identify the contact holes with defects on the sample to be tested and their defect categories.
7. A contact hole defect detection system, characterized in that: include A contact hole defect category database, wherein the contact hole defect category database is established by the contact hole defect database establishment method as described in any one of claims 1 to 5. The defect detection module is used to detect defects in the contact holes of the sample to be tested, thereby obtaining initial detection information. The calculation module is used to calculate the defect category parameters based on the first detection information. The query module is used to query the contact hole defect category database based on the defect category parameter, thereby identifying the contact holes with defects on the sample to be tested and the defect category.