一种提高p-GaNHEMT电流能力及工艺稳定性的方法
By transferring or growing a two-dimensional material layer on the surface of the AlGaN barrier layer as a barrier layer, the performance degradation of p-GaN HEMT devices caused by Mg ion diffusion is solved, and the current capability and process stability of the devices are improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
- Filing Date
- 2023-03-03
- Publication Date
- 2026-07-17
AI Technical Summary
In existing p-GaN HEMT devices, during the growth of the p-type doped GaN layer, the diffusion of Mg ions into the AlGaN barrier layer leads to a decrease in the concentration of two-dimensional electron gas in the channel, an increase in on-resistance, a decrease in saturation current density, and uneven distribution of threshold voltage, affecting device performance and process stability.
Before growing the p-GaN layer, a two-dimensional material layer is transferred or grown on the surface of the AlGaN barrier layer as a barrier layer to prevent Mg ion diffusion. The MOCVD method and heterogeneous growth transfer technology are used to form a continuous, wrinkle-free two-dimensional material film to cover the AlGaN barrier layer. Then, photolithography and etching are performed to form ohmic contacts.
This increases the two-dimensional electron gas concentration in the channel of p-GaN HEMT devices, enhances current capability, reduces device resistance, improves the uniformity of threshold voltage distribution, and improves device process stability.
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Figure CN116344342B_ABST