Optical sensor and method of forming the same, and electronic device

CN116344560BActive Publication Date: 2026-06-05SEMICON MFG INT (SHANGHAI) CORP +1

Patent Information

Authority / Receiving Office: CN · China
Patent Type: Patents(China)
Current Assignee / Owner: SEMICON MFG INT (SHANGHAI) CORP
Filing Date: 2021-12-22
Publication Date: 2026-06-05

AI Technical Summary

Technical Problem

The performance of existing photoelectric sensors needs to be improved, especially when the pixel substrate thickness increases, the interface states on the sidewalls of the isolation structure lead to increased dark current, and the packaging and testing are highly complex.

Method used

By designing a connection structure in the photoelectric sensor that contacts the interconnect layer and the pixel substrate, the pad layer contacts the interconnect layer in the dielectric layer, and the metal mesh penetrates the passivation layer above the isolation structure and contacts the conductive layer, and by applying a negative potential to the pad layer, the conductive layer of the isolation structure is connected to a negative potential, thereby improving the interface state of the sidewall of the isolation structure, reducing dark current, and ensuring the high consistency of the pad layer.

Benefits of technology

It effectively reduces the dark current of pixel units, lowers the complexity of packaging and testing, and improves photon detection sensitivity and the performance of photoelectric sensors.

✦ Generated by Eureka AI based on patent content.

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Figure CN116344560B_ABST

Patent Text Reader

Abstract

An optoelectronic sensor and a method of forming the same, and an electronic device, the optoelectronic sensor comprising: a dielectric layer on a second surface of a pixel substrate, the dielectric layer on a surface of a logic substrate; an interconnect layer in the dielectric layer; a connection structure in the dielectric layer under a normal projection of a pixel cell region of the pixel substrate, the connection structure respectively in contact with the interconnect layer in the dielectric layer and the pixel substrate; a first opening in the pixel substrate in a lead region, and exposing a top surface of the dielectric layer; a second opening in the dielectric layer under the first opening, and exposing a top surface of the interconnect layer; a pad layer in the first opening and the second opening and in contact with the interconnect layer in the dielectric layer; a passivation layer filling the first opening and the second opening and on the first surface, the passivation layer covering the pad layer and a conductive layer; a metal mesh through the passivation layer above an isolation structure and in contact with the conductive layer. Embodiments of the present application optimize the performance of the optoelectronic sensor.

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