Ultra-thin silicon-on-insulator devices and methods of forming the same

Abstract

The application provides an ultra-thin silicon-on-insulator device and a forming method thereof. The device comprises: a silicon-on-insulator, which comprises a silicon substrate and a buried insulating layer, an isolation layer, a source and a drain located on both sides of the isolation layer, and a top silicon layer located on the surface of the isolation layer in sequence on the silicon substrate; an isolation structure located on the surface of the buried insulating layer on both sides of the source and the drain, and the surface of the isolation structure is coplanar with the surface of the top silicon layer; and a gate structure located on the surface of the top silicon layer between the source and the drain. The application provides an ultra-thin silicon-on-insulator device and a forming method thereof. The source and the drain are formed on the lower surface of the top silicon layer, which can reduce the spreading resistance of the source and the drain and the parasitic capacitance from the gate to the source and the drain, and improve the reliability of the device.

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