Semiconductor structure and method of manufacturing the same
By forming defect pits in the semiconductor structure and filling them with a second semiconductor layer, the vertical leakage current problem caused by lattice mismatch is solved, and higher quality semiconductor device performance is achieved.
CN116344598BActive Publication Date: 2026-06-16ENKRIS SEMICON (WUXI) LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- ENKRIS SEMICON (WUXI) LTD
- Filing Date
- 2021-12-23
- Publication Date
- 2026-06-16
Smart Images
Figure CN116344598B_ABST
Abstract
The application provides a semiconductor structure and a preparation method thereof, and belongs to the technical field of semiconductors. The semiconductor structure comprises a substrate and a plurality of functional film layers stacked on the substrate. The plurality of functional film layers comprise a first semiconductor layer and a second semiconductor layer stacked together. The first semiconductor layer is located between the substrate and the second semiconductor layer. The first semiconductor layer comprises a plurality of defect pits recessed towards the substrate. The defect pits are filled with the second semiconductor layer. The side of the second semiconductor layer away from the first semiconductor layer is a plane. The semiconductor structure and the preparation method thereof provided by the application solve the problem of vertical leakage of the semiconductor structure in the prior art.
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