红外光电器件及其制备方法与硅基光电集成芯片
By setting a single-crystal narrow bandgap material mesa and a dielectric layer on a p-type substrate, a vertical PIN optoelectronic device structure is formed, which solves the problem of low carrier injection efficiency caused by lattice mismatch, realizes a high-efficiency infrared optoelectronic device, and provides a new solution for silicon-based optoelectronic integrated chips.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
- Filing Date
- 2023-01-09
- Publication Date
- 2026-07-17
AI Technical Summary
In existing technologies, germanium and germanium-tin materials have a large lattice mismatch with silicon, resulting in poor crystal quality of epitaxially grown single crystal materials and low device performance. Furthermore, single crystal materials grown by rapid melting are difficult to use for high-performance optoelectronic devices, and the equipment cost is high.
A vertical PIN optoelectronic device structure is formed by setting a single-crystal narrow bandgap material mesa, a dielectric layer and an n-type material layer on a p-type substrate. Heterogeneous growth is achieved through rapid melting and self-bonding technology. The electric field is mainly distributed in the single-crystal narrow bandgap material layer. Metal electrodes are set to improve carrier injection and extraction efficiency.
It realizes a high-efficiency infrared optoelectronic device, greatly improves carrier injection and extraction capabilities, enhances device performance, is compatible with silicon CMOS processes, and is suitable for silicon-based optoelectronic integrated chips.
Smart Images
Figure CN116344659B_ABST