Thin film light emitting diode module and method of manufacturing the same

Abstract

The application provides a preparation method of a thin-film light-emitting diode module. The preparation method comprises the following steps: S1, preparing a laminated structure with a common electrode, the laminated structure comprising a transparent conductive substrate, a first transport layer, a light-emitting layer and a second transport layer which are sequentially arranged in layers, and the common electrode being part of the transparent conductive substrate; S2, preparing a plurality of array-distributed metal electrodes on the side surface of the second transport layer away from the transparent conductive substrate to obtain a thin-film light-emitting diode device; S3, preparing a driving circuit back plate, the surface of the driving circuit back plate being provided with a unit electrode corresponding to each metal electrode and a counter electrode corresponding to the common electrode, the electrical property of the unit electrode being opposite to that of the counter electrode; and S4, stacking the driving circuit back plate and the thin-film light-emitting diode device in a manner that the metal electrodes are opposite to the unit electrodes, electrically connecting the corresponding metal electrodes and unit electrodes, and electrically connecting the counter electrode and the common electrode to obtain the thin-film light-emitting diode module.

Description

Technical Field

[0001] This invention relates to the field of optoelectronic device fabrication technology, and more specifically, to a thin-film light-emitting diode module and its fabrication method. Background Technology

[0002] Thin-film LED display technology primarily utilizes devices such as organic light-emitting diodes (OLEDs), quantum dot light-emitting diodes (QLEDs), and perovskite light-emitting diodes (PeLEDs). Currently, thin-film LED display devices are typically fabricated using solution methods, where the device is deposited layer-by-layer onto a transparent substrate, and the resulting LED emits light through the transparent substrate. This process is mature, yielding high-quality light-emitting layers and high device efficiency.

[0003] Applying thin-film LED devices to the display field requires integrating them with a driver circuit backplane. This necessitates patterning the light-emitting layer to create a light-emitting array. The driver circuit then controls the emission of each unit device within this array, thereby achieving the display function. Traditional LED chips are typically mounted individually on the corresponding driver circuit backplane electrodes using a pick-up and die-bonding method. However, thin-film LED devices cannot be mounted on the driver circuit backplane electrodes in this way. Therefore, existing technologies often involve patterning and depositing electrodes on the driver circuit backplane according to their size and position to obtain the various functional layers of the thin-film LED device. Finally, a transparent electrode is placed on top of the thin-film LED device to obtain a thin-film LED display module, with the module exhibiting top-emitting light.

[0004] However, the backplane of the driving circuit has complex patterned electrodes and insulating materials. Directly depositing thin films on the surface of the driving circuit backplane will affect the quality of the light-emitting layer. Moreover, the process of depositing transparent conductive electrodes on the top of the thin film LED device by means of magnetron sputtering or silver nanowire coating may damage the bottom device. Furthermore, the top transparent conductive electrodes obtained by the above methods have low light transmittance and poor conductivity, resulting in low luminous efficiency.

[0005] Therefore, in order to solve the above problems, it is necessary to study and develop a simple process for preparing thin-film LED modules and a thin-film LED module with excellent light-emitting performance. Summary of the Invention

[0006] The main objective of this invention is to provide a thin-film light-emitting diode module and its preparation method, so as to solve the problems of complex process flow and low luminous efficiency of the thin-film LED module preparation method in the prior art.

[0007] To achieve the above objectives, the present invention provides a method for fabricating a thin-film light-emitting diode (LED) module. The method includes: Step S1, preparing a stacked structure with a common electrode, the stacked structure comprising a transparent conductive substrate, a first transport layer, a light-emitting layer, and a second transport layer stacked sequentially, the common electrode being a part of the transparent conductive substrate; Step S2, fabricating an array of multiple metal electrodes on the surface of the second transport layer away from the transparent conductive substrate to obtain a thin-film LED device; Step S3, preparing a driving circuit backplane, the surface of which is provided with unit electrodes corresponding to the metal electrodes and counter electrodes corresponding to the common electrode, the electrical properties of the unit electrodes being opposite to those of the counter electrodes; Step S4, stacking the driving circuit backplane and the thin-film LED device with the metal electrodes and unit electrodes facing each other, electrically connecting the corresponding metal electrodes and unit electrodes, and electrically connecting the counter electrodes to the common electrode to obtain the thin-film LED module.

[0008] Furthermore, the stacked structure is prepared by the following method: a protective layer is deposited in contact with the area on the conductive plane of a transparent conductive substrate where a common electrode is to be disposed, resulting in a transparent conductive substrate containing a protective layer; a first transport layer, a light-emitting layer, and a second transport layer are sequentially prepared on the conductive plane of the transparent conductive substrate containing the protective layer; after peeling off the protective layer, the corresponding area on the conductive plane of the transparent conductive substrate is exposed to form a common electrode, thereby obtaining a stacked structure with a common electrode; preferably, the protective layer is selected from PET tape or PI tape; preferably, the thickness of the protective layer is 100-500 nm.

[0009] Furthermore, the stacked structure is prepared by the following method: a first transport layer, a light-emitting layer, and a second transport layer are sequentially prepared on the conductive plane of a transparent conductive substrate; the first transport layer, the light-emitting layer, and the second transport layer are etched to expose the area on the conductive plane of the transparent conductive substrate where the common electrode is to be disposed, so as to form the common electrode, thereby obtaining a stacked structure with the common electrode.

[0010] Furthermore, the etching process includes: etching the first transport layer, the light-emitting layer, and the second transport layer using ion beam etching to obtain a stacked structure with a common electrode; preferably, the ion source used in the etching process includes inert gas ions, with a vacuum degree ≤1×10⁻⁶. -7 Torr, ion beam accelerating voltage ≥100kV, etching time 1~100min.

[0011] Furthermore, the common electrode is strip-shaped; preferably, the area of ​​the common electrode accounts for 0.1% to 10% of the total area of ​​the conductive plane of the transparent conductive substrate; preferably, the transparent conductive substrate is selected from ITO conductive glass, FTO conductive glass, AZO conductive glass, silver nanowires or metal mesh.

[0012] Further, step S2 includes: depositing a metal layer on the surface of the second transport layer, and preparing multiple metal electrodes in an array distribution using a mask during the deposition process to obtain a thin-film light-emitting diode device; the shape and size of the metal electrodes can be controlled by adjusting the structure of the mask; preferably, the deposition process is vacuum thermal evaporation, and the evaporation material used in the vacuum thermal evaporation process is one or more of the group consisting of Au, Ag, Cu and Al; preferably, the thickness of the metal layer is 50-1000 nm.

[0013] Further, in step S1, the first transport layer, the light-emitting layer, and the second transport layer are prepared independently by solution spin coating or vacuum deposition; preferably, the thickness of the first transport layer is 2-200 nm; preferably, the thickness of the light-emitting layer is 10-1000 nm; preferably, the thickness of the second transport layer is 30-300 nm.

[0014] Further, the first transport layer includes a first sub-transport layer and a second sub-transport layer stacked sequentially; the material of the first sub-transport layer is selected from one or more of the group consisting of ZnO, SnO2 and PCBM; the material of the second sub-transport layer is selected from polyesterimide polyether block copolymer, preferably polyethoxyethyleneimide; preferably, the thickness ratio of the first sub-transport layer to the second sub-transport layer is 1:(0.1~1).

[0015] Furthermore, the material of the light-emitting layer is selected from one or more of the group consisting of small organic molecules, polymers, metal complex dyes, quantum dots, nanosheets, and perovskite-type organometal halide semiconductors; preferably, the material of the second transport layer is selected from one or more of the group consisting of MoO3, 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene and 1,2,4,5-tetrakis(trifluoromethyl)benzene.

[0016] Furthermore, in step S4, the electrical connection is achieved by reflow soldering or conductive adhesive bonding.

[0017] Furthermore, the drive circuit backplane is selected from module backplanes using TFT, LTPS, or a-Si as drive elements.

[0018] Another aspect of the present invention provides a thin-film light-emitting diode module, which is prepared by the above-described method for preparing a thin-film light-emitting diode module provided in this application.

[0019] By applying the technical solution of this invention, the thin-film LED device and the corresponding driving circuit backplate are stacked in such a way that the metal electrode 60 and the unit electrode 71 are arranged opposite each other, which can accurately connect the two, so that the corresponding metal electrodes and unit electrodes are electrically connected, and the counter electrode and the common electrode are electrically connected. The controllable light emission of each LED unit can be realized by controlling the driving circuit backplate. The output display of monochrome video signal can be realized by externally controlling this thin-film light-emitting diode module.

[0020] The fabrication method provided in this application eliminates the need for separate patterned deposition of the first transport layer, the light-emitting layer, the second transport layer, and the transparent conductive layer. Only step S2 involves an array-distributed patterning process, which significantly reduces the fabrication difficulty of each functional layer and improves fabrication accuracy. The transparent conductive substrate has advantages such as good wettability and high flatness. Compared to fabricating each functional layer on the surface of the driving circuit backplane, using a transparent conductive substrate as the substrate in this application simplifies the process and suppresses the adverse effects of complex patterning processes on each functional layer, thereby resulting in a thin-film LED device with higher luminous efficiency.

[0021] Furthermore, the process of depositing a transparent conductive electrode on top of a thin-film LED device can easily damage the underlying device, and the transmittance and conductivity of the top transparent conductive electrode obtained by the above method are worse than those of the transparent conductive substrate, resulting in reduced luminous efficiency. The fabrication method provided in this application avoids damage to the underlying device during the deposition process, thereby suppressing the reduction in luminous efficiency. Attached Figure Description

[0022] The accompanying drawings, which form part of this application, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an undue limitation of the invention. In the drawings:

[0023] Figure 1 A cross-sectional schematic diagram of the laminated structure in this application is shown;

[0024] Figure 2 A cross-sectional structural schematic diagram of the drive circuit backplane in this application is shown;

[0025] Figure 3 A top view of the drive circuit backplane structure in this application is shown;

[0026] Figure 4 A schematic diagram of the cross-sectional structure of the thin-film light-emitting diode module in this application is shown;

[0027] Figure 5 A process flow diagram of the fabrication process of the thin-film light-emitting diode device in this application is shown.

[0028] The above figures include the following reference numerals:

[0029] 10. Common electrode; 20. Transparent conductive substrate; 30. First transport layer; 40. Light-emitting layer; 50. Second transport layer; 60. Metal electrode; 70. Drive circuit backplane; 71. Unit electrode; 72. Counter electrode. Detailed Implementation

[0030] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The present invention will now be described in detail with reference to the embodiments.

[0031] As described in the background art, existing methods for fabricating thin-film LED modules suffer from problems such as damage to the underlying device during the deposition process, complex process flow, and low luminous efficiency of the resulting thin-film LED modules. To address these technical problems, this application provides a method for fabricating a thin-film light-emitting diode module. This method includes: step S1, preparing a stacked structure with a common electrode 10, the stacked structure comprising a transparent conductive substrate 20, a first transport layer 30, a light-emitting layer 40, and a second transport layer 50 stacked sequentially, the common electrode 10 being a part of the transparent conductive substrate 20; step S2, fabricating an array of multiple metal electrodes 60 on the surface of the second transport layer 50 away from the transparent conductive substrate 20, thereby obtaining a thin-film light-emitting diode device; step... S3, Prepare a driving circuit backplate 70. The surface of the driving circuit backplate 70 is provided with unit electrodes 71 corresponding to the metal electrodes 60 and counter electrodes 72 corresponding to the common electrode 10. The electrical properties of the unit electrodes 71 and the counter electrodes 72 are opposite. Step S4, Stack the driving circuit backplate 70 and the thin-film light-emitting diode device with the metal electrodes 60 and unit electrodes 71 arranged opposite to each other. Electrically connect the corresponding metal electrodes 60 and unit electrodes 71, and electrically connect the counter electrodes 72 to the common electrode 10 to obtain a thin-film light-emitting diode module.

[0032] By stacking the thin-film LED device and the corresponding driving circuit backplate 70 with the metal electrode 60 and the unit electrode 71 facing each other, the two can be precisely connected, so that the corresponding metal electrode 60 and unit electrode 71 are electrically connected, and the counter electrode 72 is electrically connected to the common electrode 10. The controllable light emission of each LED unit can be realized by controlling the driving circuit backplate 70. By externally controlling this thin-film light-emitting diode module, monochrome video signal output display can be realized.

[0033] The fabrication method provided in this application eliminates the need for separate patterned deposition of the first transport layer 30, the light-emitting layer 40, the second transport layer 50, and the transparent conductive layer. Only step S2 involves an array-distributed patterning process, which significantly reduces the fabrication difficulty of each functional layer and improves fabrication accuracy. The transparent conductive substrate 20 has advantages such as good wettability and high flatness. Compared to fabricating each functional layer on the surface of the driving circuit backplane 70, using the transparent conductive substrate 20 as the substrate in this application simplifies the process and suppresses the adverse effects of complex patterning processes on each functional layer, thereby resulting in a thin-film LED device with higher luminous efficiency.

[0034] Furthermore, the process of depositing a transparent conductive electrode on top of a thin-film LED device can easily damage the underlying device, and the transmittance and conductivity of the top transparent conductive electrode obtained by the above method are worse than those of the transparent conductive substrate 20, resulting in reduced luminous efficiency. The fabrication method provided in this application avoids damage to the underlying device during the deposition process, thereby suppressing the reduction in luminous efficiency.

[0035] In a preferred embodiment, the stacked structure is prepared by the following method: a protective layer is disposed in contact with the area on the conductive plane of the transparent conductive substrate 20 where the common electrode 10 is to be disposed, thereby obtaining a transparent conductive substrate 20 containing a protective layer; a first transmission layer 30, a light-emitting layer 40 and a second transmission layer 50 are sequentially prepared on the conductive plane of the transparent conductive substrate 20 containing the protective layer; after peeling off the protective layer, the corresponding area on the conductive plane of the transparent conductive substrate 20 is exposed to form the common electrode 10, thereby obtaining a stacked structure having the common electrode 10.

[0036] The protective layer provides protection through contact, and its removal during subsequent processes exposes the area of ​​the transparent conductive substrate 20 where the common electrode 10 is to be disposed on the conductive plane. The exposed area, being conductive, can serve as the common electrode 10, which facilitates subsequent electrical connection with the backplane 70 of the driving circuit, thereby enabling the thin-film LED device to emit light.

[0037] To improve the protective effect of the protective layer on the transparent conductive substrate 20 and to enhance its peel performance, the protective layer preferably includes, but is not limited to, PET tape or PI tape.

[0038] In a preferred embodiment, the thickness of the protective layer is 100–500 nm. The thickness of the protective layer includes, but is not limited to, the above range, and limiting it within this range is beneficial for processing.

[0039] In a preferred embodiment, the stacked structure is prepared by the following method: a first transport layer 30, a light-emitting layer 40, and a second transport layer 50 are sequentially prepared on the conductive plane of a transparent conductive substrate 20; the first transport layer 30, the light-emitting layer 40, and the second transport layer 50 are etched to expose the area on the conductive plane of the transparent conductive substrate 20 where the common electrode 10 is to be disposed, thereby forming the common electrode 10, and thus obtaining a stacked structure with the common electrode 10. Sequentially preparing the first transport layer 30, the light-emitting layer 40, and the second transport layer 50 on the conductive plane of the transparent conductive substrate 20 yields a stacked structure to be etched. Etching this structure efficiently obtains the common electrode 10. Compared to the traditional process of separately depositing patterned layers to obtain each functional layer, performing the above step S1 is beneficial for improving the yield and luminous efficiency of the thin-film LED module.

[0040] Ion beam etching (IBE) utilizes the principle of glow discharge to decompose argon gas into argon ions. These argon ions are accelerated by an anodic electric field and physically bombard the sample surface to achieve etching. The etching process involves filling the ion source discharge chamber with Ar gas and ionizing it to form plasma. Then, a grid draws out and accelerates the ions into a beam. The ion beam, possessing sufficient energy, enters the working chamber and bombards the solid surface atoms, causing sputtering and achieving the etching purpose. This is a purely physical etching method.

[0041] In a preferred embodiment, the etching process includes etching the first transport layer 30, the light-emitting layer 40 and the second transport layer 50 using an ion beam etching method to obtain a stacked structure with a common electrode 10.

[0042] In order to facilitate the electrical connection between the common electrode 10 and the counter electrode 72, and to reduce manufacturing difficulty and improve the yield of thin-film LED modules, in a preferred embodiment, the common electrode 10 is strip-shaped.

[0043] In a preferred embodiment, the ion source used during the etching process includes inert gas ions, with a vacuum degree ≤1×10⁻⁶. -7 Torr, ion beam accelerating voltage ≥100kV. For example, the ion source could be Ar... + Common inert gas ions, etc. The process parameters for ion beam etching include, but are not limited to, the ranges mentioned above. Limiting them within these ranges is beneficial for improving the yield and luminous efficiency of thin-film LED modules.

[0044] If the etching time is too short, it is difficult to effectively remove the layers in the light-emitting device; if the etching time is too long, it is easy to damage the conductive surface of the transparent conductive substrate (20), thereby damaging the conductivity of its common electrode (10). In a preferred embodiment, the etching time is 1 to 100 minutes. The etching process time includes, but is not limited to, the above range. Limiting it to the above range is beneficial to improving the yield and luminous efficiency of the thin-film LED module.

[0045] In a preferred embodiment, the area of ​​the common electrode 10 accounts for 0.1% to 10% of the total area of ​​the conductive plane of the transparent conductive substrate 20. The area percentage of the common electrode 10 includes, but is not limited to, the above range. Limiting it to the above range is beneficial for improving its processing performance, improving product yield, reducing resistance when electrically connected to the backplane 70 of the driving circuit, and improving the luminous efficiency of the thin-film LED module.

[0046] In a preferred embodiment, the transparent conductive substrate 20 includes, but is not limited to, ITO conductive glass, FTO conductive glass, AZO conductive glass, silver nanowires, or metal mesh. Compared to other types, using the above-mentioned transparent conductive substrates 20 is beneficial for improving light transmittance, thereby improving the luminous efficiency of the thin-film LED module.

[0047] In a preferred embodiment, step S2 includes: depositing a metal layer on the surface of the second transport layer 50, and using a mask to prepare a plurality of metal electrodes 60 arranged in an array during the deposition process to obtain a thin-film light-emitting diode device.

[0048] A metal layer is deposited on the surface of the second transport layer 50. During this deposition process, the areas where the masked region is not covered by a metal layer are deposited, while the exposed regions are covered by a metal layer, thereby fabricating multiple metal electrodes 60. By adjusting the structure of the mask, the shape and size of the metal electrodes can be controlled, enabling the fabrication of multiple metal electrodes 60 arranged in an array, thus obtaining a thin-film LED device. This process utilizes existing deposition techniques, offering high fabrication precision and a mature process flow, which is beneficial for improving the yield of thin-film LED devices.

[0049] In a preferred embodiment, the deposition process is vacuum thermal evaporation, and the evaporation material used in the vacuum thermal evaporation process is one or more of the group consisting of Au, Ag, Cu, and Al. The evaporation material is the material source for the metal layer. Compared with other types, using the above-mentioned evaporation materials is beneficial to improving the conductivity of the metal layer, thereby helping to reduce the contact resistance between the backplate 70 of the driving circuit and the electrodes in the thin-film LED device, and thus improving the luminous efficiency of the thin-film LED module.

[0050] In order to further improve the conductivity of the metal layer and reduce the contact resistance between the backplate 70 of the driving circuit and each electrode in the thin-film LED device, thereby improving the luminous efficiency of the thin-film LED module, the thickness of the metal layer is preferably 50-1000 nm.

[0051] In a preferred embodiment, in step S1, the first transport layer 30, the light-emitting layer 40, and the second transport layer 50 are prepared independently using either solution spin coating or vacuum deposition. The functional layers prepared using solution spin coating or vacuum deposition have uniform thickness, and these methods are simple, easy to operate, and have mature processes, which is beneficial for improving the yield of thin-film LED devices.

[0052] In order to improve the electron transport efficiency of thin-film light-emitting diode devices and thus improve the luminous efficiency of thin-film LED modules, the thickness of the first transport layer 30 is preferably 2-200 nm.

[0053] In order to improve the luminous efficiency of the light-emitting layer 40, and thus improve the luminous efficiency of the thin-film LED module, the thickness of the light-emitting layer 40 is preferably 10-1000 nm.

[0054] In order to improve the electron transport efficiency of thin-film light-emitting diode devices and thus improve the luminous efficiency of thin-film LED modules, the thickness of the second transport layer 50 is preferably 30-300 nm.

[0055] In a preferred embodiment, the first transport layer 30 includes a first sub-transport layer and a second sub-transport layer stacked sequentially. The material of the first sub-transport layer includes, but is not limited to, one or more materials from the group consisting of ZnO, SnO2, and PCBM. The material of the second sub-transport layer includes, but is not limited to, polyesterimide polyether block copolymer, preferably polyethoxyethyleneimine (PEIE). Compared to other types, using the above-mentioned materials for the first and second sub-transport layers is beneficial to improving electron extraction efficiency, thereby improving the luminous efficiency of the light-emitting layer 40, and thus improving the luminous efficiency of the thin-film LED module.

[0056] To further improve the electron extraction efficiency of thin-film LED devices, thereby improving the luminous efficiency of thin-film LED modules, preferably, the thickness ratio of the first sub-transmission layer to the second sub-transmission layer is 1:(0.1~1).

[0057] This application does not impose any particular limitation on the material of the light-emitting layer 40; any material commonly used in the field of thin-film LED devices can be used. Optionally, the material of the light-emitting layer 40 may include, but is not limited to, one or more of the following groups: organic small molecules, polymers, metal complex dyes, quantum dots, nanosheets, and perovskite-type organometal halide semiconductors.

[0058] In a preferred embodiment, the material of the second transport layer 50 includes, but is not limited to, one or more materials from the group consisting of MoO3, 2,2',7,7'-tetrakis(N,N-di(4-methoxyphenyl)amino)-9,9'-spirodifluorene (Spiro-OMeTAD), and 1,2,4,5-tetrakis(trifluoromethyl)benzene (TFB). Compared to other types, using the above-mentioned materials for the second transport layer 50 is beneficial for improving electron extraction efficiency, thereby improving the luminous efficiency of the light-emitting layer 40, and thus improving the luminous efficiency of the thin-film LED module.

[0059] In a preferred embodiment, an antireflection film is also attached to the non-conductive side of the transparent conductive substrate 20. This is beneficial for improving the light extraction efficiency of the thin-film LED module. Moreover, compared to the process of depositing transparent conductive electrodes on top of the thin-film LED device before mounting, the antireflection film mounted using the method of this application is smoother.

[0060] In a preferred embodiment, in step S4, the electrical connection is made by reflow soldering or conductive adhesive bonding. Using these electrical connection methods helps to suppress the quality degradation of thin-film LED devices due to the high temperatures during connection, and these methods are simple and easy to operate, thus improving the yield of thin-film LED devices.

[0061] This application does not impose any particular limitation on the driving circuit backplane 70; any driving circuit backplane 70 capable of driving and controlling thin-film LED devices can be used. In a preferred embodiment, the driving circuit backplane 70 includes, but is not limited to, a module backplane using TFT, LTPS, or a-Si as driving elements.

[0062] A second aspect of this application also provides a thin-film light-emitting diode (LED) module, which is fabricated using the method described above. The thin-film LED module fabricated using the above method exhibits excellent yield and luminous efficiency.

[0063] The present application will be further described in detail below with reference to specific embodiments, which should not be construed as limiting the scope of protection claimed in the present application.

[0064] Example 1

[0065] A method for fabricating a thin-film light-emitting diode module includes:

[0066] (1) Clean the ITO conductive glass with a sheet resistance of 10Ω / sq and improve its surface wettability with ultraviolet ozone; take 50μL of ZnO nanoparticle aqueous dispersion with a concentration of 1mg / mL and spin-coat it onto the surface of the above-treated ITO conductive glass at a speed of 4000rpm for 30s to obtain ITO / ZnO; then take 50μL of PEIE dispersion with a concentration of 1.0mg / mL and spin-coat it onto the ZnO surface at a speed of 6000rpm for 30s; after annealing at 100℃ for 0.3h, the first transport layer 30 is prepared to obtain ITO / ZnO / PEIE; the thickness of the first transport layer 30 is 15nm.

[0067] (2) Then spin-coat a 0.6 mol / L DMF solution of CH3NH3PbBr3 onto an ITO / ZnO / PEIE substrate. Set the spin-coating parameters to 4000 rpm for 30 s and an acceleration of 2000 rpm / s. After spin-coating, anneal at 100℃ for 20 min to complete the preparation of CH3NH3PbBr3 luminescent layer 40, denoted as ITO / ZnO / PEIE / CH3NH3PbBr3; the thickness of luminescent layer 40 is 80 nm.

[0068] (3) Subsequently, 1,2,4,5-tetra(trifluoromethyl)benzene (TFB) was spin-coated onto the surface of the CH3NH3PbBr3 luminescent layer 40 and a second transport layer 50 with a thickness of 7 nm was deposited by vacuum deposition to complete the preparation of the second transport layer 50, which is denoted as ITO / ZnO / PEIE / CH3NH3PbBr3 / TFB / MoO3.

[0069] (4) The ITO / ZnO / PEIE / CH3NH3PbBr3 / TFB / MoO3 prepared above was etched using a German SCIIA Systems Mill 150 ion beam etching system. The ion source was Ar. + The ion beam accelerating voltage is 100 kV, and the vacuum degree is 1 × 10⁻⁶. -7 After etching for 10 minutes, a 2mm wide area was exposed on the conductive plane of the ITO conductive glass and used as the common electrode 10, resulting in the following... Figure 1 The stacked structure shown includes a common electrode 10; the stacked structure includes a transparent conductive substrate 20, a first transmission layer 30, a light-emitting layer 40 and a second transmission layer 50 stacked in sequence, and the common electrode 10 is a part of the transparent conductive substrate 20, wherein the area of ​​the common electrode 10 accounts for 2.0% of the total area of ​​the conductive plane of the ITO conductive glass.

[0070] (5) A gold layer with a thickness of 80 nm is deposited on the surface of the second transport layer 50 in the stacked structure with a common electrode 10 by thermal evaporation. A mask with a specific pattern is used during the thermal evaporation process to obtain a total of 100 gold electrodes in a 10×10 array to obtain a perovskite green thin film LED device. The size of each gold electrode is 0.1 mm × 0.1 mm, the distance between two adjacent gold electrodes is 0.5 mm, and they are arranged in a 10×10 pattern.

[0071] (6) Prepare a driving circuit backplate 70 with TFT as the driving element. The surface of the driving circuit backplate 70 is provided with a unit electrode 71 corresponding to the metal gold electrode and a counter electrode 72 corresponding to the common electrode 10. After cleaning the driving circuit backplate 70, apply solder paste to the corresponding electrode area as a low-temperature conductive curing material to connect the two electrode plates.

[0072] (7) Prepare the drive circuit backplane, such as Figure 2 and Figure 3 As shown, the surface of the backplane 70 of the driving circuit is provided with unit electrodes 71 corresponding to the metal electrodes 60 and counter electrodes 72 corresponding to the common electrode 10. The electrical properties of the unit electrodes 71 and the counter electrodes 72 are opposite. The unit electrodes 71 on the perovskite green thin-film LED device are precisely aligned with the driving backplane electrodes (i.e., counter electrodes 72) coated with solder paste, and the two plates are electrically connected by reflow soldering at 100°C for 20 minutes to obtain the desired result. Figure 4 The thin-film LED module shown can be connected to an external controller to achieve the output and display of green monochrome video signals.

[0073] One hundred samples were prepared in parallel using the method described in Example 1. The yield of the thin-film light-emitting diode module was 91%, and the average luminous efficiency was 5.0%.

[0074] Example 2

[0075] The difference from Example 1 is that the perovskite light-emitting layer 40 is replaced with a CdS / CdSe quantum dot light-emitting layer 40, which enables the fabrication of a green quantum dot display module.

[0076] One hundred samples were prepared in parallel using the method described in Example 2. The yield of the thin-film light-emitting diode module was 97%, and the average luminous efficiency was 8.5%.

[0077] Example 3

[0078] The difference from Example 1 is that the CH3NH3PbBr3 perovskite luminescent layer 40 is replaced with CH3NH3PbI3, which enables the fabrication of a red light module.

[0079] One hundred samples were prepared in parallel using the method described in Example 3. The yield of the thin-film light-emitting diode module was 85%, and the average luminous efficiency was 4.2%.

[0080] Example 4

[0081] The difference from Example 1 is that the CH3NH3PbBr3 perovskite luminescent layer 40 is replaced with CH3NH3PbBr2Cl, which enables the fabrication of a blue light module.

[0082] One hundred samples were prepared in parallel using the method described in Example 4. The production yield of the thin-film light-emitting diode module was 88%, and the average luminous efficiency was 2.0%.

[0083] Example 5

[0084] The difference from Example 1 is that an antireflective film is attached to the non-conductive side of the ITO conductive glass, while the remaining steps are the same as in Example 1. The antireflective film is made of Al2O3, has a thickness of 50 μm, and its size is comparable to the area of ​​the ITO conductive glass.

[0085] One hundred samples were prepared in parallel using the method described in Example 5. The yield of the thin-film light-emitting diode module was 92%, and the average luminous efficiency was 6.5%.

[0086] Comparative Example 1

[0087] A method for fabricating a thin-film LED module, comprising:

[0088] A driving circuit backplane 70 with TFT as the driving element is prepared. A first transmission layer 30 is sequentially patterned and deposited in an array on the driving circuit backplane 70. A light-emitting layer 40 and a second transmission layer 50 are sequentially deposited on the surface of the first transmission layer 30 by spin coating (the spin coating process is the same as in Example 1). Finally, an ITO / Ag / ITO layer is deposited as a transparent electrode by magnetron sputtering to obtain a thin film LED module.

[0089] One hundred samples were prepared in parallel using the method in Comparative Example 1. The production yield of the thin-film LED module was 53%, and the average luminous efficiency was 1.9%.

[0090] As can be seen from the above description, the embodiments of the present invention achieve the following technical effects:

[0091] Comparing Examples 1 to 4 with Comparative Example 1, it can be seen that, compared to fabricating each functional layer on the surface of the driving circuit backplane 70, using a transparent conductive substrate 20 as the substrate for the above-mentioned processing in this application simplifies the process and suppresses the adverse effects of complex patterning processes on each functional layer, thereby resulting in a thin-film LED device with higher luminous efficiency. The fabrication method provided in this application avoids damage to the bottom device during the deposition process, thus suppressing the reduction in luminous efficiency.

[0092] Comparing Examples 1 and 5, it can be seen that, compared with the process of depositing transparent conductive electrodes on the top of the thin-film LED device and then mounting it, the antireflection film mounted using the solution of this application is smoother, which is beneficial to improving the light extraction efficiency of the thin-film LED module.

[0093] It should be noted that the terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such terms can be used interchangeably where appropriate so that the embodiments of this application described herein can be implemented, for example, in a sequence other than those described herein.

[0094] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A method for fabricating a thin-film light-emitting diode module, characterized in that, The preparation method includes: Step S1: Prepare a stacked structure with a common electrode (10). The stacked structure includes a transparent conductive substrate (20), a first transport layer (30), a light-emitting layer (40), and a second transport layer (50) stacked sequentially. The common electrode (10) is a part of the transparent conductive substrate (20). The stacked structure is prepared by the following method: the first transport layer (30), the light-emitting layer (40), and the second transport layer (50) are sequentially prepared on the conductive plane of the transparent conductive substrate (20); the first transport layer (30), the light-emitting layer (40), and the second transport layer (50) are etched by ion beam etching to expose the area on the conductive plane of the transparent conductive substrate (20) where the common electrode (10) is to be disposed, so as to form the common electrode (10), thereby obtaining the stacked structure having the common electrode (10); during the etching process, the ion source used includes inert gas ions, and the vacuum degree is ≤1×10 -7 torr, ion beam accelerating voltage ≥100kV, etching time 1~100min; or, a protective layer is provided in contact with the area on the conductive plane of the transparent conductive substrate (20) where the common electrode (10) is to be disposed, to obtain a transparent conductive substrate (20) with a protective layer; the first transport layer (30), the light-emitting layer (40) and the second transport layer (50) are sequentially prepared on the conductive plane of the transparent conductive substrate (20) with a protective layer, and after the protective layer is peeled off, the corresponding area of ​​the conductive plane of the transparent conductive substrate (20) is exposed to form the common electrode (10), thereby obtaining the stacked structure with the common electrode (10); Step S2: A metal layer is deposited on the surface of the second transport layer (50). During the deposition process, multiple metal electrodes (60) are fabricated in an array using a mask to obtain a thin-film light-emitting diode device. The thickness of the metal layer is 50-1000 nm. Step S3: Prepare a drive circuit backplate (70). The surface of the drive circuit backplate (70) is provided with unit electrodes (71) corresponding to the metal electrodes (60) and counter electrodes (72) corresponding to the common electrode (10). The electrical properties of the unit electrodes (71) are opposite to those of the counter electrodes (72). Step S4: The driving circuit backplate (70) and the thin film light-emitting diode device are stacked in such a way that the metal electrode (60) and the unit electrode (71) are arranged opposite to each other. The corresponding metal electrodes (60) and the unit electrodes (71) are electrically connected, and the counter electrode (72) is electrically connected to the common electrode (10) to obtain the thin film light-emitting diode module.

2. The method for fabricating a thin-film light-emitting diode module according to claim 1, characterized in that, The protective layer is selected from PET tape or PI tape.

3. The method for fabricating a thin-film light-emitting diode module according to claim 2, characterized in that, The thickness of the protective layer is 100–500 nm.

4. The method for fabricating a thin-film light-emitting diode module according to claim 1, characterized in that, The common electrode (10) is strip-shaped.

5. The method for fabricating a thin-film light-emitting diode module according to claim 4, characterized in that, The area of ​​the common electrode (10) accounts for 0.1% to 10% of the total area of ​​the conductive plane of the transparent conductive substrate (20).

6. The method for fabricating a film light-emitting diode module according to claim 4, characterized in that, The transparent conductive substrate (20) is selected from ITO conductive glass, FTO conductive glass, AZO conductive glass, silver nanowires or metal mesh.

7. The method for fabricating a thin-film light-emitting diode module according to claim 3, characterized in that, The deposition process is a vacuum thermal evaporation process, and the evaporation material used in the vacuum thermal evaporation process is one or more of the group consisting of Au, Ag, Cu and Al.

8. The method for fabricating a thin-film light-emitting diode module according to any one of claims 1 to 7, characterized in that, In step S1, the first transport layer (30), the light-emitting layer (40), and the second transport layer (50) are prepared independently by solution spin coating or vacuum deposition.

9. The method for fabricating a thin-film light-emitting diode module according to claim 8, characterized in that, The thickness of the first transport layer (30) is 2 to 200 nm.

10. The method for fabricating a thin-film light-emitting diode module according to claim 8, characterized in that, The thickness of the light-emitting layer (40) is 10 to 1000 nm.

11. The method for fabricating a thin-film light-emitting diode module according to claim 8, characterized in that, The thickness of the second transport layer (50) is 30-300 nm.

12. The method for fabricating a thin-film light-emitting diode module according to claim 8, characterized in that, The first transport layer (30) includes a first sub-transport layer and a second sub-transport layer stacked sequentially; the material of the first sub-transport layer is selected from one or more of the group consisting of ZnO, SnO2 and PCBM; the material of the second sub-transport layer is selected from polyesterimide polyether block copolymer.

13. The method for fabricating a thin-film light-emitting diode module according to claim 12, characterized in that, The material of the second transport layer is selected from polyethoxyethylene imine.

14. The method for fabricating a thin-film light-emitting diode module according to claim 12, characterized in that, The thickness ratio of the first sub-transmission layer to the second sub-transmission layer is 1:(0.1~1).

15. The method for fabricating a thin-film light-emitting diode module according to claim 8, characterized in that, The material of the light-emitting layer (40) is selected from one or more of the group consisting of small organic molecules, polymers, metal complex dyes, quantum dots, nanosheets, and perovskite-type organometal halide semiconductors.

16. The method for fabricating a thin-film light-emitting diode module according to claim 15, characterized in that, The material of the second transport layer (50) is selected from one or more of the group consisting of MoO3, 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene and 1,2,4,5-tetrakis(trifluoromethyl)benzene.

17. The method for fabricating a thin-film light-emitting diode module according to claim 1, characterized in that, In step S4, the electrical connection is achieved by reflow soldering or conductive adhesive bonding.

18. The method for fabricating a thin-film light-emitting diode module according to claim 1, characterized in that, The drive circuit backplane (70) is selected from the module backplane with TFT, LTPS, and a-Si as drive elements.

19. A thin-film light-emitting diode module, characterized in that, The thin-film light-emitting diode module is prepared by the method for preparing a thin-film light-emitting diode module according to any one of claims 1 to 18.

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