Apparatus for processing semiconductor workpieces

Abstract

Embodiments of the present application relate to apparatuses for processing semiconductor workpieces. An apparatus for processing semiconductor workpieces according to an embodiment includes a platen and a radio frequency launch structure coupled to the platen. The radio frequency launch structure includes a radio frequency element including a metallic conductor, a conductive rod configured to be electrically coupled to the metallic conductor, the conductive rod having a root portion and an end portion coupled to the root portion, and an insulator member surrounding the root portion of the conductive rod, a portion of the end portion of the conductive rod being configured to be disposed in the platen. The apparatus for processing semiconductor workpieces provided by embodiments of the present application can achieve good and reliable radio frequency launch.

Description

Technical Field

[0001] This application relates to the semiconductor field, and in particular to an apparatus for processing semiconductor workpieces. Background Technology

[0002] Currently, before performing the process of bonding semiconductor workpieces, a semiconductor workpiece processing unit is required to pre-process the workpieces. In some process flows, the semiconductor workpiece processing unit needs to maintain a vacuum state within its internal chamber while processing the workpiece. Typically, a robotic arm transports the workpiece from the atmosphere to the semiconductor workpiece processing unit, completes the pre-processing, and then uses the same robotic arm to transfer the workpiece back to the atmosphere. Therefore, the internal chamber of the semiconductor workpiece processing unit is frequently exposed to the atmosphere, requiring a switch between vacuum and atmosphere after each processing cycle. If this switching takes too long, it will affect the efficiency of the semiconductor workpiece processing unit, and consequently, the efficiency of semiconductor workpiece manufacturing.

[0003] Therefore, the industry needs to design a device for processing semiconductor workpieces that can quickly switch between vacuum and atmospheric conditions, thereby efficiently preprocessing semiconductor workpieces. Summary of the Invention

[0004] One of the objectives of this application is to provide an apparatus for processing semiconductor workpieces, which can achieve rapid switching between vacuum and atmospheric conditions, shorten the time required for evacuating the internal chamber of the apparatus for processing semiconductor workpieces, improve the processing efficiency of semiconductor workpieces, and the apparatus for processing semiconductor workpieces provided in this application can also achieve good and reliable radio frequency introduction.

[0005] An apparatus for processing semiconductor workpieces according to an embodiment of this application includes: an upper electrode plate; a lower electrode plate that is projected to overlap with the upper electrode plate; and a base plate having a bearing surface configured to support the lower electrode plate, wherein a central region of the bearing surface is provided with an air extraction hole, and the bearing surface is provided with a receiving groove pattern having a first depth; the apparatus for processing semiconductor workpieces further includes a lifting mechanism configured to be received in the receiving groove pattern in a receiving state.

[0006] In some embodiments of this application, the bearing surface is further provided with an air guide groove pattern having a second depth, wherein the first depth is greater than the second depth, and the receiving groove pattern and the air guide groove pattern at least partially overlap.

[0007] In some embodiments of this application, the air extraction hole is substantially located at the geometric center of the bearing surface, the receiving groove pattern is centered on the air extraction hole and has a claw-shaped outline, and the air guide groove pattern is centered on the air extraction hole and is distributed radially symmetrically.

[0008] In some embodiments of this application, the lifting mechanism includes: a first horizontal portion received in a receiving groove pattern, the first horizontal portion having a first through hole penetrating the first horizontal portion; and a first vertical portion disposed in the first through hole of the first horizontal portion, the first vertical portion being configured to lift a semiconductor workpiece.

[0009] In some embodiments of this application, the lower electrode plate has a second through hole extending through the lower electrode plate, and the first vertical portion is configured to move within the second through hole.

[0010] In some embodiments of this application, the first horizontal portion includes a horizontal plate-like structure radiating outward from the center of the first horizontal portion, the horizontal plate-like structure being completely received in the receiving groove pattern and configured to move in the receiving groove pattern in a direction perpendicular to the bearing surface.

[0011] In some embodiments of this application, the shape of the horizontal plate-like structure is the same as the shape of the storage slot pattern.

[0012] In some embodiments of this application, the lifting mechanism further includes a second vertical portion connected to the first horizontal portion, the second vertical portion being configured to drive the first horizontal portion to rise and fall.

[0013] In some embodiments of this application, the second vertical portion is connected to the center of the first horizontal portion.

[0014] In some embodiments of this application, the apparatus for processing semiconductor workpieces further includes an upper insulating structure surrounding the upper surface and side surface of the upper electrode plate.

[0015] In some embodiments of this application, the apparatus for processing semiconductor workpieces further includes an insulating positioning ring configured to surround a side surface of a lower electrode plate; and an insulating carrier configured to be fixed to a carrier surface and to support the lower electrode plate and the insulating positioning ring.

[0016] In some embodiments of this application, at least one of the upper insulating structure, the insulating carrier, and the insulating positioning ring is made of radio frequency resistant material.

[0017] In some embodiments of this application, the apparatus for processing semiconductor workpieces further includes a first radio frequency introduction structure connected to the upper electrode.

[0018] In some embodiments of this application, the first radio frequency introduction structure is connected to the first blind hole of the upper electrode plate via a third through hole penetrating the upper insulating structure.

[0019] In some embodiments of this application, the apparatus for processing semiconductor workpieces further includes a cover plate connected to an upper insulating structure and an upper electrode plate by fasteners, wherein the upper electrode plate is configured to be connected to the cover plate by a hoisting manner, and wherein the fasteners pass through a fourth through hole in the upper insulating structure.

[0020] In some embodiments of this application, the apparatus for processing semiconductor workpieces further includes a second radio frequency introduction structure connected to the lower electrode.

[0021] In some embodiments of this application, the second radio frequency introduction structure is connected to the second blind hole of the lower electrode plate via a fifth through hole through the insulating carrier.

[0022] In some embodiments of this application, the lower electrode is configured to be pluggably connected to the base plate via a second radio frequency introduction structure.

[0023] In some embodiments of this application, the second blind hole is provided with an electrical contact.

[0024] In some embodiments of this application, the insulating support member is provided with a sixth through hole that penetrates the insulating support member, the sixth through hole being used to accommodate the first vertical portion of the lifting mechanism.

[0025] In some embodiments of this application, the apparatus for processing semiconductor workpieces further includes a side plate disposed between a base plate and a cover plate, the base plate, the cover plate, and the side plate together defining a chamber for processing semiconductor workpieces.

[0026] In some embodiments of this application, the upper and lower electrodes are configured to apply plasma to a semiconductor workpiece.

[0027] In some embodiments of this application, the lower electrode is configured to carry a semiconductor workpiece.

[0028] According to another embodiment of this application, an apparatus for processing a semiconductor workpiece is provided, comprising: an electrode plate and a radio frequency (RF) induction structure connected to the electrode plate, the RF induction structure comprising: an RF element including a metal conductor; a conductive rod configured to be electrically connected to the metal conductor, the conductive rod having a root and an end connected to the root; and an insulating member surrounding the root of the conductive rod, a portion of the end of the conductive rod being configured to be inserted into the electrode plate.

[0029] In some embodiments of this application, the radio frequency introduction structure further includes an inner core extending from a first surface of a metal conductor, and a conductive rod connected to the first surface and having a cavity for receiving the inner core, the conductive rod contacting the inner core.

[0030] In some embodiments of this application, the radio frequency introduction structure further includes a horizontal plate-like element connected to the radio frequency element, the horizontal plate-like element having a second surface and a third surface opposite to the second surface, the third surface being configured to contact a removable first metal coil.

[0031] In some embodiments of this application, the first metal coil may be either an incompletely closed coil or a fully closed coil.

[0032] In some embodiments of this application, the conductive rod includes a vertical portion extending along the length direction of the radio frequency introduction structure.

[0033] In some embodiments of this application, the apparatus for processing semiconductor workpieces further includes fasteners disposed on a second surface of a horizontal plate-like element of the radio frequency introduction structure.

[0034] In some embodiments of this application, the apparatus for processing semiconductor workpieces further includes a cover plate located above an electrode plate, the electrode plate being connected to the cover plate by a screw-locking hoisting method, and fasteners securing the radio frequency introduction structure to the cover plate.

[0035] In some embodiments of this application, the apparatus for processing semiconductor workpieces further includes an upper insulating structure surrounding the upper and side surfaces of the electrode plate and located between the electrode plate and the cover plate, with a conductive rod passing through the cover plate and a third through hole in the upper insulating structure.

[0036] In some embodiments of this application, the end of the conductive rod is connected to a blind hole in the electrode plate by passing through a third through hole.

[0037] In some embodiments of this application, the conductive rod includes a vertical portion extending along the length direction of the radio frequency introduction structure and a horizontal portion extending along the width direction of the radio frequency introduction structure, wherein the horizontal portion has a first horizontal surface, a second horizontal surface opposite to the first horizontal surface, and a side surface located between the first horizontal surface and the second horizontal surface, and the root includes the horizontal portion; and the insulator member includes: a first portion that surrounds the first horizontal surface and the side surface of the horizontal portion; and a second portion that surrounds the vertical portion within the root of the conductive rod.

[0038] In some embodiments of this application, the insulating member further includes a third portion that covers the second horizontal surface of the horizontal portion and surrounds a portion of the metal conductor.

[0039] In some embodiments of this application, a first horizontal surface of the horizontal portion is provided with a first groove configured to receive a removable sealing ring.

[0040] In some embodiments of this application, the sealing ring is made of an elastic material.

[0041] In some embodiments of this application, the radio frequency introduction structure further includes a flange element configured to attach the radio frequency introduction structure to a base plate of a device for processing semiconductor structures in a pluggable manner, the base plate being located below the electrode plate.

[0042] In some embodiments of this application, the flange element has a fourth surface that contacts the second portion, the fourth surface being provided with a second groove configured to receive a removable second metal coil.

[0043] In some embodiments of this application, the second metal coil may be either an incompletely closed coil or a fully closed coil.

[0044] In some embodiments of this application, the apparatus for processing semiconductor workpieces further includes an insulating support member for supporting an electrode plate, the insulating support member being located between the electrode plate and a base plate, and the conductive rod passing through the base plate and a fifth through hole in the insulating support member.

[0045] In some embodiments of this application, the end of the conductive rod passes through a fifth through hole and is connected to a blind hole in the electrode plate.

[0046] According to another embodiment of this application, an apparatus for processing semiconductor workpieces is provided, comprising: an upper electrode plate; a lower electrode plate that is projected to overlap with the upper electrode plate; a cover plate located above the upper electrode plate; a bottom plate located below the lower electrode plate; a first radio frequency (RF) inlet structure connected to the cover plate and the first electrode plate by a suspension method; and a second RF inlet structure connected to the bottom plate and the second electrode plate by a plug-in method; each of the first and second RF inlet structures includes: an RF element comprising a metal conductor; a conductive rod configured to be electrically connected to the metal conductor, the conductive rod having a root and an end extending from the root; and an insulating member surrounding the root of the conductive rod, a portion of the end of the conductive rod being configured to be disposed in a corresponding electrode plate.

[0047] In some embodiments of this application, the apparatus for processing semiconductor workpieces further includes: an upper insulating structure surrounding an upper surface and a side surface of an upper electrode plate; an insulating positioning ring surrounding a side surface of a lower electrode plate; and an insulating support member configured to support the lower electrode plate and the insulating positioning ring, wherein the first radio frequency introduction structure passes through the upper insulating structure and the second radio frequency introduction structure passes through the insulating support member.

[0048] One objective of this application is to provide an apparatus for processing semiconductor workpieces, which enables rapid switching between vacuum and atmospheric conditions, improving the processing efficiency of semiconductor workpieces. Furthermore, the apparatus provided in this application also achieves reliable radio frequency (RF) introduction. Therefore, the apparatus provided in this application can efficiently preprocess semiconductor workpieces, meeting the industry's needs for apparatuses for processing semiconductor workpieces. Attached Figure Description

[0049] The accompanying drawings, necessary for describing the embodiments of this application or the prior art, will be briefly described below to facilitate the description of the embodiments of this application. Obviously, the drawings described below are only some embodiments of this application. Those skilled in the art can still obtain drawings of other embodiments based on the structures illustrated in these drawings without any inventive effort.

[0050] Figure 1 This is a cross-sectional perspective view of an apparatus for processing semiconductor workpieces according to an embodiment of this application.

[0051] Figure 2 yes Figure 1 The diagram shows a three-dimensional view of the base plate of the apparatus for processing semiconductor workpieces.

[0052] Figure 3A yes Figure 1 A three-dimensional cross-sectional view of the base plate of the apparatus for handling semiconductor workpieces and a portion of the lifting mechanism at the lower limit position.

[0053] Figure 3B yes Figure 3A Enlarged cross-sectional three-dimensional schematic diagram of part AA shown.

[0054] Figure 4A yes Figure 1 A three-dimensional cross-sectional view of the base plate and a portion of the lifting mechanism at its upper limit position of the apparatus for handling semiconductor workpieces.

[0055] Figure 4B yes Figure 4A Enlarged cross-sectional three-dimensional schematic diagram of part BB shown.

[0056] Figure 5 yes Figure 1 The enlarged cross-sectional perspective view of the CC portion shown illustrates the first radio frequency introduction structure of the apparatus for processing semiconductor workpieces.

[0057] Figure 6 yes Figure 1 The enlarged cross-sectional perspective view of the DD portion shown illustrates the second radio frequency introduction structure of the apparatus for processing semiconductor workpieces.

[0058] Figure 7 yes Figure 6 The enlarged cross-sectional perspective view of the EE portion shown illustrates a portion of the end of the second RF induction structure. Detailed Implementation

[0059] Embodiments of this application will be described in detail below. Throughout this specification, identical or similar components and components having identical or similar functions are indicated by similar reference numerals. The embodiments described herein with reference to the accompanying drawings are illustrative and diagrammatic in nature and are intended to provide a basic understanding of this application. The embodiments of this application should not be construed as limiting this application.

[0060] As used herein, the terms “approximately,” “substantially,” and “essentially” are used to describe and indicate small variations. When used in conjunction with an event or situation, the terms may refer to examples in which the event or situation occurred precisely or in examples in which the event or situation occurred very approximately. For example, when used in conjunction with numerical values, the terms may refer to a range of variation less than or equal to ±10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±0.5%, or less than or equal to ±0.05%. For example, if the difference between two numerical values ​​is less than or equal to ±10% of the average of the values, then the two numerical values ​​can be considered “substantially” the same.

[0061] Furthermore, for ease of description, "first," "second," "third," etc., can be used in this article to distinguish different components of a figure or a series of figures. "First," "second," "third," etc., are not intended to describe the corresponding components.

[0062] In this application, unless otherwise specified or limited, the terms “set,” “connect,” “couple,” “fix,” and similar terms are used extensively, and those skilled in the art can understand the above terms as appropriate to the specific circumstances. For example, it may refer to a fixed connection, a detachable connection, or an integrated connection; it may also refer to a mechanical connection or an electrical connection; it may also refer to a direct connection or an indirect connection through an intermediary structure; or it may refer to internal communication between two components.

[0063] Figure 1 This is a cross-sectional perspective view of an apparatus 10 for processing semiconductor workpieces according to an embodiment of this application. Figure 2 yes Figure 1 A three-dimensional schematic diagram of the base plate 103 of the apparatus 10 for processing semiconductor workpieces. Figure 3A yes Figure 1 A three-dimensional cross-sectional view of the base plate 105 and a portion of the lifting mechanism 107 at the lower limit position of the apparatus 10 for processing semiconductor workpieces. Figure 3B yes Figure 3A The enlarged cross-sectional three-dimensional schematic diagram of part AA is shown. Figure 4A yes Figure 1 A three-dimensional cross-sectional view of the base plate 105 and a portion of the lifting mechanism 107 at its upper limit position of the apparatus 10 for processing semiconductor workpieces. Figure 4B yes Figure 4A The enlarged cross-sectional three-dimensional schematic diagram of section BB is shown.

[0064] like Figures 1 to 4B As shown, an apparatus 10 for processing semiconductor workpieces according to an embodiment of this application may include: an upper electrode plate 101, a lower electrode plate 103, a base plate 105, and a lifting mechanism 107. The apparatus 10 for processing semiconductor workpieces has a length along the X direction (i.e., the horizontal direction), a thickness along the Y direction (i.e., the vertical direction), and a width along the Z direction. The apparatus 10 for processing semiconductor workpieces may perform processes on the semiconductor workpieces, such as, but not limited to, cleaning and activation. For example, for silicon-silicon fused bonding, the apparatus 10 may activate the silicon surface to significantly reduce the annealing temperature required for subsequent high-strength silicon-silicon direct bonding, thereby facilitating subsequent CMOS process processing. For copper-copper diffusion bonding, the apparatus 10 may clean the metal surface to improve the hydrophilicity of the wafer surface.

[0065] The upper electrode plate 101 may have an upper surface 101a, a lower surface 101b opposite to the upper surface 101a, and a side surface 101c located between the upper surface 101a and the lower surface 101b. The upper electrode plate 101 may be provided with a first blind hole 101d recessed from the upper surface 101a into the interior of the upper electrode plate 101, which is used to receive a portion 2052b' of the end of the first radio frequency introduction structure 205, so that the first radio frequency introduction structure 205 is connected to the upper electrode plate 101, thereby realizing radio frequency introduction of the upper electrode plate 101. The upper electrode plate 101 may also be provided with an additional blind hole 101e recessed from the upper surface 101a into the interior of the upper electrode plate 101, which is used to receive the end 217a of the fastener 217, so that the upper electrode plate 101 can be connected to the cover plate 209 by means of suspension via the fastener 217. Since the upper electrode plate 101 does not require frequent replacement, it can be fixed to the cover plate 209 by hoisting. In other embodiments of this application, the fixing method of the upper electrode plate 101 can be set in any suitable manner. The upper electrode plate 101 may be provided with one or more grooves 101f recessed from the upper surface 101a to the interior of the upper electrode plate 101, which are used to accommodate positioning pins 101g. Positioning pins 101g can be used for positioning between the upper electrode plate 101 and the upper insulating structure 109 surrounding the upper electrode plate 101. The upper surface 101a and side surface 101c of the upper electrode plate 101 can be surrounded by the upper insulating structure 109. The upper electrode plate 101 can be used to generate a plasma (PLASMA) field. The upper electrode plate 101 can be connected to a high-frequency power supply or a low-frequency power supply. The power supply type of the upper electrode plate 101 can be adjusted according to the process requirements.

[0066] The lower electrode 103 may be disposed overlapping the upper electrode 101 in projection. The lower electrode 103 may be supported by the base plate 105. The lower electrode 103 may have an upper surface 103a, a lower surface 103b opposite to the upper surface 103a, and a side surface 103c located between the upper surface 103a and the lower surface 103b. The upper surface 103a of the lower electrode 103 may be configured to support a semiconductor workpiece (not shown in the figure). When the device 10 processes the semiconductor workpiece, the semiconductor workpiece is disposed on the upper surface 103a. The lower electrode 103 has a second through hole (not shown in the figure) penetrating the lower electrode 103, so that the first vertical portion (not shown in the figure) of the lifting mechanism 107 can move in the second through hole, which will be described in detail later. The lower electrode plate 103 may be provided with a second blind hole 103d recessed from the lower surface 103b into the interior of the lower electrode plate 103. This hole accommodates a portion 2072b' of the end of the second radio frequency (RF) guide structure 207, allowing the RF guide structure 207 to connect to the lower electrode plate 103, thereby enabling RF guidance of the lower electrode plate 103. Since the lower electrode plate 103 requires frequent and rapid replacement, it is connected to the base plate 105 via the second RF guide structure 207 in a plug-in manner, thus securing the lower electrode plate 103 for convenient and rapid replacement. In other embodiments of this application, the fixing method of the lower electrode plate 103 can be configured in any suitable manner. The lower electrode plate 103 may be provided with one or more grooves 103e recessed from the lower surface 103b into the interior of the lower electrode plate 103, which accommodate a positioning pin 103f. The positioning pin 103f can be used for positioning between the lower electrode plate 103 and the insulating support member 203 supporting the lower electrode plate 103. The side surface 103c of the lower electrode 103 can be surrounded by an insulating positioning ring 201. The lower surface 103b of the lower electrode 103 is disposed on the insulating support member 203. The lower electrode 103 can be used to generate a plasma field. The lower electrode 103 can be connected to a high-frequency power supply or a low-frequency power supply. The power supply type of the lower electrode 103 can be adjusted according to the process requirements. The upper electrode 101 and the lower electrode 103 can be configured to apply plasma to a semiconductor workpiece. One of the upper electrode 101 and the lower electrode 103 can be connected to a high-frequency power supply, and the other of the upper electrode 101 and the lower electrode 103 can be connected to a low-frequency power supply. The power supply types of the upper electrode 101 and the lower electrode 103 can be interchanged according to the process requirements.

[0067] A base plate 105 may be located below the lower electrode plate 103, and has a bearing surface 105a configured to support the lower electrode plate 103. A vacuum hole 105b may be provided in the central region of the bearing surface 105a. The vacuum hole 105b may be substantially located at the geometric center of the bearing surface 105a. The vacuum hole 105b may be connected to a vacuum device so that gas within the device 10 is extracted through the vacuum hole 105b. The bearing surface 105a may have a receiving groove pattern 105c having a first depth D1. A lifting mechanism 107 may be partially disposed in the receiving groove pattern 105c (details will be described later). The receiving groove pattern 105c may have a claw-shaped outline centered on the vacuum hole 105b. An example of a claw-shaped outline is the design of the Mercedes-Benz logo, which extends outward from the center. The number of receiving groove patterns 105c extending outward from the center is not limited to three; the number of receiving groove patterns 105c can be designed according to specific needs. The storage groove pattern 105c can extend outward from the air extraction hole 105b to any position within the circular area S of the base plate 105. Alternatively, the storage groove pattern 105c can extend outward from the air extraction hole 105b to the edge of the circular area S of the base plate 105. In this way, the storage groove pattern 105c can not only accommodate a part of the lifting mechanism 107, but also serve as an air extraction channel, allowing gas within the device 10 to be extracted through the storage groove pattern 105c, ensuring uniform airflow from top to bottom. The bearing surface 105a of the base plate 105 also has an air guide groove pattern 105d with a second depth D2. The first depth D1 can be greater than the second depth D2. The storage groove pattern 105c can at least partially overlap with the air guide groove pattern 105d. The air guide groove pattern 105d can be radially symmetrically distributed with the air extraction hole 105b as the center. The number of air guide groove patterns 105d is not limited to 12; the number of air guide groove patterns 105d can be designed according to specific needs.

[0068] The lifting mechanism 107 is configured to be received in the storage slot pattern 105c when in a receiving state. The lifting mechanism 107 may include a first horizontal portion 107a, a first vertical portion, and a second vertical portion 107b. The first horizontal portion 107a may be received in the storage slot pattern 105c. The first horizontal portion 107a may include a horizontal plate-like structure 1071a radiating outward from the center 107c of the first horizontal portion 107a. The horizontal plate-like structure 1071a may be completely received in the storage slot pattern 105c and may be configured to move in the storage slot pattern 105c in a direction perpendicular to the bearing surface 105a, i.e., the Y direction. The shape of the horizontal plate-like structure 1071a may be the same as the shape of the storage slot pattern 105c that receives the corresponding horizontal plate-like structure 1071a, so as to minimize the cavity volume of the device 10. The first horizontal portion 107a may have a first through hole 107a' extending through the first horizontal portion 107a. The first through hole 107a' can be provided on the horizontal plate structure 1071a. The first through hole 107a' can be provided at a position near the end of the horizontal plate structure 1071a, such as... Figures 3A to 4AAs shown. In other embodiments of this application, the first through hole 107a' can be disposed at any suitable position in the horizontal plate-like structure 1071a, so that the first vertical portion disposed in the first through hole 107a' can stably support the semiconductor workpiece. The first vertical portion can be disposed in the first through hole 107a' of the first horizontal portion 107a. The first vertical portion can be configured to move up and down along the Y direction in the second through hole to lift the semiconductor workpiece. The first vertical portion can be, for example, but not limited to, a support rod. The first vertical portion can be configured to move up and down along the Y direction in the second through hole penetrating the lower electrode plate 103 and the sixth through hole (not shown) penetrating the insulating support member 203. Although the second through-hole of the lower electrode plate 103 and the sixth through-hole of the insulating support member 203 are not shown in the figures, those skilled in the art will understand that each first through-hole 107a' is correspondingly provided with a first vertical portion extending along the Y direction. The first vertical portion can pass through the sixth through-hole of the insulating support member 203 and the second through-hole of the lower electrode plate 103. When the first vertical portion is in its highest position, its upper end can extend between the upper electrode plate 101 and the lower electrode plate 103 to carry a semiconductor workpiece transferred from the outside into the device 10. When the first vertical portion is in its lowest position, its upper end can be located below the upper surface 103a of the lower electrode plate 103. The second vertical portion 107b can be connected to the center 107c of the first horizontal portion 107a. The second vertical portion 107b can be configured to drive the first horizontal portion 107a to move up and down. The second vertical portion 107b can be connected to a drive device, such as, but not limited to, a motor. The second vertical portion 107b can drive the first horizontal portion 107a and the first vertical portion to move up and down along the Y direction under the action of the driving device. The materials of the first horizontal portion 107a, the second vertical portion 107b, and the first vertical portion are insulating materials, such as, but not limited to, quartz glass. Insulating materials with low outgassing rates and resistance to plasma bombardment can be selected, such as, but not limited to, quartz glass. Because quartz glass has a lower outgassing rate, a smoother surface, a denser structure, and fewer pores, it is more conducive to the rapid extraction of gas. Furthermore, quartz glass also has good mechanical strength to support semiconductor workpieces.

[0069] like Figure 3B As shown, the horizontal plate-like structure 1071a is at its lowest position, that is, the lower limit position. (As...) Figure 4BAs shown, the horizontal plate structure 1071a is at its highest position, i.e., the upper limit position. Before the semiconductor workpiece moves into the device 10, the second vertical portion 107b drives the first horizontal portion 107a to move upward along the Y direction from the lower limit position. Consequently, the first vertical portion supported by the first horizontal portion 107a moves upward along the Y direction to extend beyond the upper surface 103a of the lower electrode plate 103, ready to carry the semiconductor workpiece. When the robot moves the semiconductor workpiece into the device 10, the horizontal plate structure 1071a is at its upper limit position, and the first vertical portion extends from the upper surface 103a of the lower electrode plate 103. The robot places the semiconductor workpiece on the first vertical portion. When the semiconductor workpiece is stably placed on the first vertical portion, the second vertical portion 107b drives the first horizontal portion 107a and the first vertical portion downward. When the horizontal plate structure 1071a reaches its lower limit position, the first vertical portion is located below the upper surface 103a of the lower electrode plate 103. At this time, the lower electrode plate 103 carries the semiconductor workpiece. Next, the semiconductor workpiece may be subjected to, for example, but not limited to, activation treatment.

[0070] The apparatus 10 for handling semiconductor workpieces may further include an upper insulating structure 109 surrounding the upper electrode 101, an insulating positioning ring 201, an insulating support member 203, a cover plate 209, and a side plate 211.

[0071] The upper insulating structure 109 may surround the upper surface 101a and side surface 101c of the upper electrode plate 101. Since the upper electrode plate 101 does not need to be replaced frequently, the upper insulating structure 109 surrounding the upper surface 101a and side surface 101c of the upper electrode plate 101 may be integral. In other embodiments of this application, the upper insulating structure 109 may be divided into two parts, one part surrounding the upper surface 101a of the upper electrode plate 101, and the other part surrounding the side surface 101c of the upper electrode plate 101. The upper insulating structure 109 may be located between the cover plate 209 and the upper electrode plate 101. The upper insulating structure 109 may have a third through hole 109a penetrating the upper insulating structure 109. The upper insulating structure 109 may have a fourth through hole 109b penetrating the upper insulating structure 109. The fastener 217 may pass through the fourth through hole 109b of the upper insulating structure 109 to connect the cover plate 209 to the upper electrode plate 101. The upper electrode plate 101 can be connected to the cover plate 209 by means of hoisting in this manner. The material of the upper insulating structure 109 can be selected from materials with low outgassing rate, radio frequency resistance and good insulation effect, such as, but not limited to, ceramics and quartz glass. Quartz glass is preferred because it has a lower outgassing rate, a smoother surface, a denser structure, fewer pores, better economic cost and mechanical strength.

[0072] An insulating positioning ring 201 can be configured to surround the side surface 103c of the lower electrode plate 103. The insulating positioning ring 201 can be supported on the insulating support member 203. When it is necessary to remove the lower electrode plate 103 from the device 10, the insulating positioning ring 201 can be removed first. The material of the insulating positioning ring 201 can be selected from materials with low outgassing rate, radio frequency resistance and good insulation effect, such as, but not limited to, ceramics and quartz glass. Quartz glass is preferred because it has a lower outgassing rate, a smoother surface, a denser structure, fewer pores, better economic cost and mechanical strength.

[0073] The insulating support member 203 can be configured with a support surface 105a for fixing to the base plate 105, and can support the lower electrode plate 103 and the insulating positioning ring 201. The insulating support member 203 may have a fifth through hole 203a through the insulating support member 203, so that the second radio frequency introduction structure 207 can be connected to the second blind hole 103d of the lower electrode plate 103 via the fifth through hole 203a. The insulating support member 203 may have a sixth through hole (not shown in the figure) through the insulating support member 203. The sixth through hole is used to accommodate the first vertical portion of the lifting mechanism 207. The material of the insulating support member 203 can be selected from materials with low outgassing rate, radio frequency resistance and good insulation effect, such as, but not limited to, ceramics and quartz glass. Quartz glass is preferred because it has a lower outgassing rate, a smoother surface, a denser structure, fewer pores, better economic cost and mechanical strength. At least one of the upper insulating structure 109, the insulating positioning ring 201, and the insulating carrier 203 may be made of a radio frequency resistant material with a low outgassing rate. When the device 10 processes a semiconductor workpiece, the upper insulating structure 109, the insulating positioning ring 201, and the insulating carrier 203 enclose the upper electrode 101 and the lower electrode 103 to separate the plasma field from the external ground potential.

[0074] A cover plate 209 may be disposed on the upper insulating structure 109. The cover plate 209 may be connected to the upper insulating structure 109 and the upper electrode plate 101 via fasteners 217. Fasteners 217 are disposed on the cover plate 209 to secure the first radio frequency guide structure 205 to the cover plate 209. The cover plate 209 may be located above the upper electrode plate 101. The upper electrode plate 101 may be connected to the cover plate 209 by, for example, but not limited to, screw-locking suspension.

[0075] Side plate 211 may be disposed between base plate 105 and cover plate 209. Base plate 105, cover plate 209, and side plate 211 together define a chamber 215 for processing semiconductor workpieces in apparatus 10. Chamber 215 is in a vacuum state when processing semiconductor workpieces. There are sealing rings (not shown) between cover plate 209, side plate 211, and base plate 105 to isolate them from the atmosphere. At the same time, a metal coil (not shown) is also installed between any two of cover plate 209, side plate 211, and base plate 105 for conduction. Its function is to keep cover plate 209, side plate 211, and base plate 105 at the same potential so that they are all kept in a grounded state.

[0076] This embodiment of the application uses a storage groove pattern 105c on the base plate 105 to accommodate a portion of the lifting mechanism 107, which saves the original chamber volume occupied by the lifting mechanism 107 and reduces the cavity volume of the device 10 while still meeting the movement stroke requirements of the lifting mechanism 107. Since the cavity volume is directly proportional to the vacuuming time, i.e., the smaller the cavity volume, the shorter the vacuuming time, this embodiment of the application shortens the vacuuming time of the device 10 by reducing the cavity volume of the device 10, thereby improving the switching speed between vacuum and atmosphere in the device 10. Furthermore, since the base plate 105 is relatively thick, this embodiment of the application also designs a gas guide groove pattern 105d on the base plate 105, so that the material originally used to fill the cavity volume has a new use, i.e., as a gas guide channel, so that the cavity inside the device 10 flows more smoothly to the centrally located air extraction hole 105 through the gas guide groove pattern 105d, which is close to and connected to the centrally located air extraction hole 105b, thereby ensuring that the airflow is extracted quickly and evenly from top to bottom. Furthermore, this embodiment of the application also designs a receiving groove pattern 105c that can at least partially overlap with the gas guiding groove pattern 105d, making better use of the thicker base plate 105 to achieve multiple functions. Moreover, this embodiment of the application further assists in the rapid extraction of gas by designing an upper insulating structure 109, an insulating positioning ring 201, and an insulating support member 203 formed of a material with a low outgassing rate, thereby accelerating the switching speed between vacuum and atmosphere in the device 10.

[0077] Figure 5 yes Figure 1 The enlarged cross-sectional perspective view of the CC portion shows the first radio frequency introduction structure 205 of the apparatus 10 for processing semiconductor workpieces.

[0078] like Figure 5 As shown, the first radio frequency introduction structure 205 can be connected to the upper electrode plate 101. The first radio frequency introduction structure 205 can be connected to the first blind hole 101d of the upper electrode plate 101 via the third through hole 109a penetrating the upper insulating structure 109.

[0079] The first radio frequency introduction structure 205 may include a first radio frequency element 2051, a first conductive rod 2052, a first insulating member 2053, a first inner core 2055, and a first horizontal plate-shaped element 2057.

[0080] The first radio frequency element 2051 may include a metal conductor 2051a. The metal conductor 2051a may be connected to an external device to deliver radio frequency energy to the upper electrode 101.

[0081] A first conductive rod 2052 may be configured to be electrically connected to a metal conductor 2051a. The first conductive rod 2052 may be connected to a first surface 2051a' of the metal conductor 2051a. The first conductive rod 2052 may have a root 2052a extending from the first surface 2051a' and an end 2052b connected to the root 2052a. The first conductive rod 2052 may have a cavity 2052c accommodating a first inner core 2055. The first conductive rod 2052 may contact the first inner core 2055, whereby the first inner core 2055 may conduct radio frequency energy from the metal conductor 2051a to the first conductive rod 2052. The first conductive rod 2052 may include a vertical portion 2052d extending along the length direction (negative Y direction) of the first radio frequency introduction structure 205. Figure 5 In this embodiment, the first conductive rod 2052 includes only a vertical portion 2052d. In other embodiments of this application, the first conductive rod 2052 may also include a horizontal portion extending along the X direction. The first conductive rod 2052 can pass through the cover plate 209 and the third through hole 109a of the upper insulating structure 109. The end portion 2052b of the first conductive rod 2052 can be connected to the first blind hole 101d of the upper electrode plate 101 through the third through hole 109a. A portion 2052b' of the end portion 2052b of the first conductive rod 2052 can be configured to be inserted into the upper electrode plate 101. The first conductive rod 2052 may be made of a metallic material, such as, but not limited to, copper, aluminum, or stainless steel.

[0082] The first insulating member 2053 may surround the root 2052a of the first conductive rod 2052 to isolate the upper electrode 101 from the other parts of the device 10 by potential, so as to ensure that the upper electrode 101 is charged and the cover plate 209 is well grounded. The material of the first insulating member 2053 may be any suitable insulating material, such as, but not limited to, PTFE (polytetrafluoroethylene) material, which is capable of insulation and has a certain mechanical strength.

[0083] A first inner core 2055 may extend from a first surface 2051a' of a metal conductor 2051a. The first inner core 2055 may contact a first conductive rod 2052 to conduct radio frequency energy from the metal conductor 2051a to the first conductive rod 2052. The first inner core 2055 may be any suitable conductive material.

[0084] A first horizontal plate-shaped element 2057 can be connected to a first radio frequency element 2051. The first horizontal plate-shaped element 2057 may have a second surface 2057a and a third surface 2057b opposite to the second surface 2057a. The third surface 2057b may be configured to contact a removable first metal coil 2057c. The first metal coil 2057c may be disposed within a recess in the cover plate 209. The first metal coil 2057c may be a partially closed coil or a fully closed coil. When the first radio frequency induction structure 205 is secured to the cover plate 209 by fasteners 213, the first metal coil 2057c ensures good grounding of the cover plate 209, providing good shielding between the cover plate 209 and the first radio frequency induction structure 205 for electrical isolation. The first metal coil 2057c may have a spiral shape similar to a telephone wire, giving it a certain degree of elasticity, thereby securing the connection between the first radio frequency induction structure 205 and the cover plate 209. The material of the first metal coil 2057c may be a metallic material, such as, but not limited to, nickel.

[0085] The first radio frequency (RF) inlet structure 205 may further include a fastener 213. The fastener 213 may be disposed on the second surface 2057a of the first horizontal plate-like element 2057 of the first RF inlet structure 205. The fastener 213 may secure the first RF inlet structure 205 to the cover plate 209.

[0086] The first radio frequency (RF) induction structure 205 provided in this embodiment employs a first insulator component 2053 to electrically isolate the cover plate 209 from the first RF induction structure 205, ensuring good RF induction from the first RF induction structure 205. Furthermore, the shielding effect between the cover plate 209 and the first RF induction structure 205 is further improved by providing a first metal coil 2057c. Simultaneously, the first metal coil 2057c, with its certain elasticity, can further tighten the connection between the first RF induction structure 205 and the cover plate 209. Therefore, the first RF induction structure 205 provided in this embodiment has a good and stable RF induction effect.

[0087] Figure 6 yes Figure 1 The enlarged cross-sectional perspective view of the DD portion shows the second radio frequency introduction structure 207 of the device 10 for processing semiconductor workpieces. Figure 7 yes Figure 6 The enlarged cross-sectional perspective view of the EE portion shown illustrates a portion 2072b' of the end 2072b of the second radio frequency introduction structure 207.

[0088] like Figure 6As shown, the second RF inlet structure 207 can be connected to the lower electrode plate 103. The second RF inlet structure 207 can be connected to the second blind hole 103d of the lower electrode plate 103 via the fifth through hole 203a through the insulating carrier 203. The lower electrode plate 103 can be configured to be plugged into and connected to the lower electrode plate 103 via the second RF inlet structure 207.

[0089] The second radio frequency introduction structure 207 may include a second radio frequency element 2071, a second conductive rod 2072, a second insulating member 2073, a second inner core 2075, a second horizontal plate-shaped element 2077, and a flange element 2081.

[0090] The second radio frequency element 2071 may include a metal conductor 2071a. The metal conductor 2071a may be connected to an external device to deliver radio frequency energy to the lower electrode 103.

[0091] The second conductive rod 2072 may be configured to be electrically connected to the metal conductor 2071a. The second conductive rod 2072 may be connected to a first surface 2071a' of the metal conductor 2071a. The second conductive rod 2072 may have a root 2072a extending from the first surface 2071a' of the metal conductor 2071a and an end 2072b connected to the root 2072a. The second conductive rod 2072 may have a cavity 2072c accommodating a second inner core 2075. The second conductive rod 2072 may contact the second inner core 2075, whereby the second inner core 2075 may conduct radio frequency energy from the metal conductor 2071a to the second conductive rod 2072. The second conductive rod 2072 may include a vertical portion 2072d extending along the length direction (positive Y direction) of the second radio frequency introduction structure 207 and a horizontal portion 2072e extending along the width direction (positive X direction) of the second radio frequency introduction structure 207. The horizontal portion 2072e may have a first horizontal surface 2072e1, a second horizontal surface 2072e2 opposite to the first horizontal surface 2072e1, a side surface 2072e3 located between the first horizontal surface 2072e1 and the second horizontal surface 2072e2, and a vertical surface 2072e4 extending along the Y direction. The root portion 2072a may include a portion of the horizontal portion 2072e and the vertical portion 2072d. The first horizontal surface 2072e1 may be provided with a first groove 2072e1' recessed from the first horizontal surface 2072e1 into the horizontal portion 2072e. The first groove 2072e1' may be configured to receive a removable sealing ring 2072s. The sealing ring 2072s may be made of a resilient insulating material to secure the second conductive rod 2072 tightly to the base plate 105 to help completely seal the second conductive rod 2072. The second conductive rod 2072 can pass through the base plate 105 and the fifth through hole 203a of the insulating carrier 203. The end 2072b of the second conductive rod 2072 can be connected to the second blind hole 103d of the lower electrode plate 103 through the fifth through hole 203a. The second conductive rod 2072 can be made of metal, preferably a material with high conductivity, such as, but not limited to, aluminum and stainless steel. In some applications, it is necessary to avoid choosing a second conductive rod 2072 made of copper. Because copper has good conductivity and is relatively reactive, once copper particles fall onto the wafer, it may cause the thin film circuit to connect, seriously damaging the chip quality. A portion 2072b' of the end 2072b of the second conductive rod 2072 can be configured to be placed in the second blind hole 103d of the lower electrode plate 103. The second blind hole 103d may also be provided with a groove 2083a surrounding the second blind hole 103d. The groove 2083a can accommodate a third metal coil 2083b. The third metal coil 2083b can be a closed metal coil to ensure equal potential at all points and avoid potential differences caused by gaps. The third metal coil 2083b is suitable for axial contact applications.The third metal coil 2083b can have good elasticity to ensure a long service life. Using a third metal coil 2083b with good elasticity and suitable for axial contact ensures good radio frequency conduction to the lower electrode 103 for a portion 2072b' of the end 2072b of the second conductive rod 2072. The material of the third metal coil 2083b can be selected, for example, but not limited to, nickel, nickel-plated stainless steel, or Inconel (nickel-based superalloy).

[0092] The second insulating member 2073 may surround the root 2072a of the second conductive rod 2072 to provide potential isolation between the lower electrode 103 and other parts of the device 10, ensuring that the lower electrode 103 is energized while the base plate 105 is properly grounded. The material of the second insulating member 2073 may be any suitable insulating material, such as, but not limited to, PTFE, which is capable of insulation and has a certain mechanical strength. The second insulating member 2073 may include a first part 2073a, a second part 2073b, and a third part 2073c. The first part 2073a may surround the first horizontal surface 2072e1 and the side surface 2072e3 of the horizontal part 2072e. The second part 2073b may surround the vertical part 2072d within the root 2072a of the second conductive rod 2072. The third part 2073c may cover the second horizontal surface 2072e2, the vertical surface 2072e4, and a portion of the metal conductor 2071a of the horizontal part 2072b. The first portion 2073a, the second portion 2073b, and the third portion 2073c of the second insulating member 2073 completely surround the root 2052a of the first conductive rod 2052, thereby completely isolating the root 2072a of the second conductive rod 2072 from other components. Furthermore, a sealing ring 2079 can be provided on the second portion 2073b to more securely connect the second conductive rod 2072 to the base plate 105, while also achieving a vacuum seal.

[0093] The second inner core 2075 may extend from the second surface 2071a' of the metal conductor 2071a. The second inner core 2075 may contact the second conductive rod 2072 to conduct radio frequency energy from the metal conductor 2071a to the second conductive rod 2072.

[0094] The second horizontal plate-shaped element 2077 can be connected to the second radio frequency element 2071. The second horizontal plate-shaped element 2077 may have a second surface 2077a and a third surface 2077b opposite to the second surface 2077a. The third surface 2077b may be configured to contact a removable second metal coil 2077c. The second metal coil 2077c may be a partially closed coil or a fully closed coil. The second metal coil 2077c may be disposed within a groove of the flange element 2081. The second metal coil 2077c may be a partially closed coil or a fully closed coil. When the second radio frequency introduction structure 207 is fixed to the base plate 105 via the flange element 2081, the second metal coil 2077c ensures that the base plate 105 is well grounded, thereby providing good shielding between the base plate 105 and the second radio frequency introduction structure 207 for electrical isolation. The second metal coil 2077c may have a spiral shape similar to that of a telephone cord, so that the second metal coil 2077c has a certain degree of elasticity, thereby securing the connection between the second radio frequency guide structure 207 and the base plate 105. The material of the second metal coil 2077c may be a metallic material, such as, but not limited to, nickel.

[0095] Flange element 2081 can be configured to attach the second RF induction structure 207 to the base plate 105 of the device 10 for processing semiconductor structures via a plug-in method. The base plate 105 can be located below the lower electrode plate 103. Flange element 2081 can have a fourth surface 2081a that contacts the second portion 2073b of the second insulator member 2073. The fourth surface 2081a can be provided with a third groove 2081b. The third groove 2081b can be configured to receive a removable third metal coil 2081c. The third metal coil 2081c can be a partially closed coil or a fully closed coil. When the second RF induction structure 207 is attached to the base plate 105 via flange element 2081, the third metal coil 2081c ensures good grounding of the base plate 105, providing good shielding between the base plate 105 and the second RF induction structure 207 for electrical isolation. The third metal coil 2081c may have a spiral shape similar to that of a telephone cord, so that the third metal coil 2081c has a certain degree of elasticity, thereby securing the connection between the second radio frequency guide structure 207 and the base plate 105. The material of the third metal coil 2081c may be a metallic material, such as, but not limited to, nickel.

[0096] This embodiment uses a flange element 2081 to fix the second RF induction structure 207, allowing the second RF induction structure 207 to be installed in a pluggable manner, thus enabling simple replacement of the lower electrode 103 and facilitating installation, maintenance, and testing. Furthermore, the second RF induction structure 207 employs a second insulator component 2073 to electrically isolate the base plate 105 from the second RF induction structure 207, ensuring good RF induction. Simultaneously, sealing rings 2079 and 2072s further tighten the connection between the second RF induction structure 207 and the base plate 105. Moreover, the shielding effect between the base plate 105 and the second RF induction structure 207 is further improved by setting a second metal coil 2077c and a third metal coil 2081c. Therefore, the second RF induction structure 207 in this embodiment is not only easy to disassemble but also stably connected to the base plate 105, providing a reliable RF connection and avoiding ignition failure due to loose connections, thereby preventing damage to the cavity.

[0097] The technical content and features of this application have been disclosed above. However, those skilled in the art may still make various substitutions and modifications that do not depart from the spirit of this application based on the teachings and disclosures of this application. Therefore, the scope of protection of this application should not be limited to the content disclosed in the embodiments, but should include various substitutions and modifications that do not depart from this application, and should be covered by the claims of this application.

Claims

1. An apparatus for processing semiconductor workpieces, comprising: An electrode plate and a radio frequency induction structure connected to the electrode plate, the radio frequency induction structure comprising: Radio frequency components, including metallic conductors; A horizontal plate-shaped element is connected to the radio frequency element. The horizontal plate-shaped element has a second surface and a third surface opposite to the second surface. The third surface is configured to contact a removable first metal coil. When the electrode plate is an upper electrode plate, a cover plate is located above the upper electrode plate, the radio frequency guide structure is connected to the cover plate and the upper electrode plate, and the first metal coil grounds the cover plate. Alternatively, when the electrode plate is a lower electrode plate, a base plate is located below the lower electrode plate, the radio frequency guide structure is connected to the base plate and the lower electrode plate, and the first metal coil grounds the base plate. A conductive rod configured to be electrically connected to the metal conductor, the conductive rod having a root and an end connected to the root; and An insulating member surrounds the root of the conductive rod, and a portion of the end of the conductive rod is configured to be inserted into the electrode plate.

2. The apparatus for processing a semiconductor workpiece according to claim 1, wherein the radio frequency introduction structure further includes an inner core extending from a first surface of the metal conductor, and the conductive rod is connected to the first surface and has a cavity for receiving the inner core, the conductive rod contacting the inner core.

3. The apparatus for processing semiconductor workpieces according to claim 1, wherein the first metal coil is either a partially closed coil or a fully closed coil.

4. The apparatus for processing semiconductor workpieces according to claim 1, wherein the conductive rod includes a vertical portion extending along the length direction of the radio frequency introduction structure.

5. The apparatus for processing semiconductor workpieces according to claim 1, further comprising fasteners disposed on the second surface of the horizontal plate-like element of the radio frequency introduction structure.

6. The apparatus for processing semiconductor workpieces according to claim 5, further comprising a cover plate located above the electrode plate, the electrode plate being connected to the cover plate by a screw-locking hoisting method, and the fasteners securing the radio frequency guide structure to the cover plate.

7. The apparatus for processing semiconductor workpieces according to claim 6, further comprising an upper insulating structure surrounding the upper and side surfaces of the electrode plate and located between the electrode plate and the cover plate, wherein the conductive rod passes through the cover plate and a third through hole in the upper insulating structure.

8. The apparatus for processing a semiconductor workpiece according to claim 7, wherein the end of the conductive rod is connected to a blind hole of the electrode plate through the third through hole.

9. The apparatus for processing a semiconductor workpiece according to claim 1, wherein the conductive rod comprises a vertical portion extending along the length direction of the radio frequency introduction structure and a horizontal portion extending along the width direction of the radio frequency introduction structure, wherein the horizontal portion has a first horizontal surface, a second horizontal surface opposite to the first horizontal surface, and a side surface located between the first horizontal surface and the second horizontal surface, and the root portion comprises the horizontal portion; and The insulating component includes: The first part, which surrounds the first horizontal surface and the side surface of the horizontal portion; and The second part is the vertical portion that surrounds the root of the conductive rod.

10. The apparatus for processing a semiconductor workpiece according to claim 9, wherein the insulator member further comprises a third portion that covers the second horizontal surface of the horizontal portion and a portion of the metal conductor.

11. The apparatus for processing a semiconductor workpiece according to claim 9, wherein the first horizontal surface of the horizontal portion is provided with a first groove configured to receive a removable sealing ring.

12. The apparatus for processing semiconductor workpieces according to claim 11, wherein the sealing ring is made of an elastic material.

13. The apparatus for processing semiconductor workpieces according to claim 9, wherein the radio frequency introduction structure further comprises a flange element configured to attach the radio frequency introduction structure to a base plate of the apparatus for processing semiconductor workpieces in a pluggable manner, the base plate being located below the electrode plate.

14. The apparatus for processing semiconductor workpieces according to claim 13, wherein the flange element has a fourth surface in contact with the second portion, the fourth surface being provided with a third groove configured to receive a removable second metal coil.

15. The apparatus for processing semiconductor workpieces according to claim 14, wherein the second metal coil is either a partially closed coil or a fully closed coil.

16. The apparatus for processing a semiconductor according to claim 9, further comprising an insulating support member supporting the electrode plate, the insulating support member being located between the electrode plate and the base plate, and the conductive rod passing through the base plate and a fifth through hole of the insulating support member.

17. The apparatus for processing a semiconductor workpiece according to claim 16, wherein the end of the conductive rod passes through the fifth through hole and is connected to a blind hole in the electrode plate.

18. An apparatus for processing semiconductor workpieces, comprising: Upper electrode plate; The lower electrode plate is arranged to overlap with the upper electrode plate in projection; A cover plate, which is located above the upper electrode plate; A base plate, which is located below the lower electrode plate; The first radio frequency introduction structure is connected to the cover plate and the upper electrode plate by means of suspension; and The second radio frequency introduction structure is connected to the base plate and the lower electrode plate by a plug-in method; Both the first radio frequency introduction structure and the second radio frequency introduction structure include: Radio frequency components, including metallic conductors; A conductive rod configured to be electrically connected to the metal conductor, the conductive rod having a root and an end extending from the root; and An insulating member surrounds the root of the conductive rod, and a portion of the end of the conductive rod is configured to be disposed in a corresponding electrode plate; At least one of the first RF induction structure and the second RF induction structure includes: a horizontal plate-like element connected to the RF element, the horizontal plate-like element having a second surface and a third surface opposite to the second surface, the third surface being configured to contact a removable first metal coil, wherein the first metal coil grounds the cover plate and / or the base plate.

19. The apparatus for processing semiconductor workpieces according to claim 18, further comprising: An upper insulating structure surrounds the upper surface and side surfaces of the upper electrode plate; An insulating positioning ring surrounds the side surface of the lower electrode plate; and An insulating support element configured to support the lower electrode plate and the insulating positioning ring. The first radio frequency (RF) guide structure passes through the upper insulating structure, and the second RF guide structure passes through the insulating carrier.

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