Substrate processing apparatus and substrate processing method

Abstract

An exemplary embodiment of the present invention provides a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes a chamber having an internal space, a shower head for dividing the internal space into an upper first region and a lower second region and formed with a plurality of through-holes, a support unit for supporting a substrate in the second region, a gas supply unit for supplying a gas to the first region, a plasma source for forming a plasma in the first region by exciting the gas, and an adsorption plate coupled to the shower head, wherein a surface of the adsorption plate is provided with a material that adsorbs a group contained in the plasma.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2021-0189899, ​​filed with the Korean Intellectual Property Office on December 28, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present invention relates to a substrate processing apparatus and a substrate processing method, and more specifically, to a substrate processing apparatus and a substrate processing method for processing a substrate using plasma. Background Technology

[0004] Plasma refers to an ionized gaseous state composed of ions, radicals, and electrons. Plasma is generated by very high temperatures, strong electric fields, or radio frequency (RF) electromagnetic fields. Semiconductor device manufacturing processes may include etching processes that use plasma to remove thin films or foreign matter formed on a substrate (such as a wafer). In performing the etching process, the ions and / or radicals of the plasma collide with or react with the thin film on the substrate.

[0005] Typically, various thin films, including natural oxide films, are stacked and formed on a substrate. The various processes using plasma to process the substrate require appropriate selectivity for each process. Selectivity is determined based on the degree of etching of the films formed on the substrate. Some films formed on the substrate can be etched by an etchant formed by the interaction of reactive groups (or plasma) and process gases. Furthermore, other portions of the films formed on the substrate may be etched by groups. The targets etched by the etchant and the targets etched by the groups are different. Therefore, it is important to control the ratio of etchant to groups applied to the substrate to control the selectivity suitable for the substrate. Summary of the Invention

[0006] This invention aims to provide a substrate processing apparatus and a substrate processing method that can effectively process substrates.

[0007] This invention also aims to provide a substrate processing apparatus and a substrate processing method that can effectively absorb ultraviolet light generated by plasma.

[0008] The present invention also aims to provide a substrate processing apparatus and a substrate processing method capable of adjusting the amount of groups between the groups acting on the substrate and the etchant.

[0009] The present invention also aims to provide a substrate processing apparatus and a substrate processing method capable of adjusting the selectivity of a substrate by attaching and separating adsorption plates according to process adsorption groups and replacing the adsorption plates with adsorption plates suitable for the process.

[0010] The problems to be solved by the present invention are not limited to those described above, and those skilled in the art will clearly understand from the following description any problems not mentioned.

[0011] An exemplary embodiment of the present invention provides a substrate processing apparatus, the substrate processing apparatus comprising: a chamber having an internal space; a spray head for dividing the internal space into an upper first region and a lower second region, the spray head having a plurality of through holes; a support unit for supporting a substrate in the second region; a gas supply unit for supplying gas to the first region; a plasma source for generating plasma in the first region by exciting the gas; and an adsorption plate connected to the spray head, wherein the surface of the adsorption plate is provided with a material adsorbing groups contained in the plasma.

[0012] According to an exemplary embodiment, the surface of the adsorption plate may be provided with a material different from that of the spray head.

[0013] According to an exemplary embodiment, the gas may contain fluorine, and the groups may contain fluorine groups.

[0014] According to an exemplary embodiment, the material may include nickel (Ni) or titanium (Ti), and the adsorption plate may adsorb fluorine groups.

[0015] According to an exemplary embodiment, the gas may also contain hydrogen ions, and the adsorption plate may adsorb the hydrogen ions in the gas.

[0016] According to an exemplary embodiment, the adsorption plate may be configured to contact the upper surface of the spray head.

[0017] According to an exemplary embodiment, the adsorption plate can be configured such that the spray head is detachable.

[0018] According to an exemplary embodiment, a plurality of adsorption holes can be formed in the adsorption plate, and the adsorption holes can be positioned to overlap with the through holes when viewed from above.

[0019] According to an exemplary embodiment, the plasma source may include: an ion blocking element disposed above a spray head to divide a first region into an upper plasma forming space and a lower mixing space, and the ion blocking element being grounded; and an upper electrode disposed above the ion blocking element and applying power to the ion blocking element.

[0020] According to an exemplary embodiment, the gas supply unit may include: a first gas supply unit for supplying a first gas to a plasma forming space; and a second gas supply unit for supplying a second gas to a mixing space; and a plasma source may excite the first gas to form a plasma, and an ion blocking device may capture ions contained in the plasma formed in the plasma forming space and allow groups to pass through the mixing space.

[0021] Another exemplary embodiment of the present invention provides a substrate processing apparatus, the substrate processing apparatus comprising: a chamber having an internal space; a support unit for supporting a substrate in the internal space; an upper electrode to which high-frequency power is applied; an ion blocking member disposed below the upper electrode and grounded; a spray head disposed below the ion blocking member and above the support unit, and having a plurality of through holes; a first gas supply unit for supplying a first gas to the space between the upper electrode and the ion blocking member; and a second gas supply unit for supplying gas to the space between the ion blocking member and the spray head. The system provides a second gas for the space supply; and an adsorption plate disposed on the upper surface of the spray head. The area between the upper electrode and the ion blocking element can be configured as a plasma forming space in which plasma is formed by the first gas. The area between the ion blocking element and the spray head can be configured as a mixing space in which groups contained in the plasma react with the second gas to form an etchant. A substrate processing area can be disposed below the spray head, in which the substrate is processed by the etchant. The surface of the adsorption plate can be provided with a material capable of adsorbing specific ions contained in the first gas and the second gas, as well as a material containing groups.

[0022] According to an exemplary embodiment, a particular ion may include a hydrogen ion, and a group may include a fluorine group.

[0023] According to an exemplary embodiment, the material may include nickel (Ni) or titanium (Ti).

[0024] According to an exemplary embodiment, the adsorption plate can be configured such that the self-spraying head is detachable, a plurality of adsorption holes can be formed in the adsorption plate, and the adsorption holes can be positioned to overlap with the through holes when viewed from the top, and the diameter of the adsorption holes can be set to be larger than the diameter of the through holes.

[0025] Another exemplary embodiment of the present invention provides a method for processing a substrate having a first film and a second film different from the first film. The method includes: generating plasma in a first space within a chamber by exciting a first gas, and causing radicals to flow into a second space within the chamber by blocking ions contained in the plasma, wherein some components of the radicals supplied to the second space are adsorbed onto the surface of an adsorption plate disposed in the second space and removed.

[0026] According to an exemplary embodiment, some other components of the groups supplied to the second space may react with the second gas supplied to the second space to form an etchant, and some other components of the groups supplied to the second space may flow into a third space, in which the substrate is located.

[0027] According to an exemplary embodiment, an etchant can be supplied to a third space to remove the first membrane between the first membrane and the second membrane.

[0028] According to an exemplary embodiment, the groups flowing into the third space can remove the second membrane between the first membrane and the second membrane.

[0029] According to an exemplary embodiment, the surface of the adsorption plate may be coated with a material capable of adsorbing groups.

[0030] According to an exemplary embodiment, the first membrane may include an oxide membrane, the first gas may contain fluorine, the second gas may contain ammonia, and the groups may include fluorine groups.

[0031] According to the exemplary embodiment, the substrate can be processed effectively.

[0032] Furthermore, according to an exemplary embodiment of the present invention, ultraviolet light generated by plasma can be effectively adsorbed.

[0033] Furthermore, according to an exemplary embodiment of the present invention, the amount of groups between the groups acting on the substrate and the etchant can be adjusted.

[0034] Furthermore, according to an exemplary embodiment of the present invention, the selectivity of the substrate can be adjusted by attaching and separating the adsorption plate according to the process adsorption group and replacing the adsorption plate with an adsorption plate suitable for the process.

[0035] The effects of the present invention are not limited to those described above, and those skilled in the art can clearly understand from this specification and the accompanying drawings the effects not mentioned. Attached Figure Description

[0036] Figure 1 A diagram illustrating a substrate processing apparatus according to an exemplary embodiment of the present invention is shown for illustrative purposes.

[0037] Figure 2 The frontal view is shown for illustrative purposes. Figure 1 A diagram of the spray head and the adsorption plate.

[0038] Figure 3 To illustrate, the method of stimulating Figure 1 A diagram showing the state in which the first gas in the substrate processing apparatus forms plasma in the plasma forming space.

[0039] Figure 4 To illustrate, it is shown that by... Figure 1 The diagram shows the state in which a second gas is supplied to the mixing space of the substrate processing apparatus to form an etchant.

[0040] Figure 5 for Figure 4 An enlarged view of part A in the middle. Figure 5 The illustration schematically shows the adsorption of radicals flowing in the mixing space of the substrate processing apparatus onto the adsorption plate.

[0041] Figure 6 To illustrate, according to Figure 1 A diagram of a substrate processing apparatus of another exemplary embodiment.

[0042] Figure 7 To illustrate, according to Figure 1 A diagram of a substrate processing apparatus of another exemplary embodiment. Detailed Implementation

[0043] In the following description, exemplary embodiments of the invention will be described in more detail with reference to the accompanying drawings. Exemplary embodiments of the invention may be modified in various ways, and the scope of the invention should not be construed as limited to the exemplary embodiments described below. Exemplary embodiments are provided to explain the invention more fully to those skilled in the art. Therefore, the shapes of components in the drawings are exaggerated for clearer illustration.

[0044] Terms such as "first" and "second" are used to describe various constituent elements, but these constituent elements are not limited by these terms. These terms are only used to distinguish one constituent element from another. For example, without departing from the scope of the invention, a first constituent element may be named a second constituent element, and similarly, a second constituent element may be named a first constituent element.

[0045] In the following text, reference will be made to the appendix. Figure 1-7 Exemplary embodiments of the present invention will be described in more detail below.

[0046] Figure 1 A diagram illustrating a substrate processing apparatus according to an exemplary embodiment of the present invention is shown for illustrative purposes. (Refer to...) Figure 1According to an exemplary embodiment of the present invention, a substrate processing apparatus 1 processes a substrate W. The substrate processing apparatus 1 may use plasma to process the substrate W. For example, the substrate processing apparatus 1 may perform an etching process for removing a thin film on the substrate W using plasma, an ashing process for removing a photoresist film, a deposition process for forming a thin film on the substrate W, or a drying and cleaning process. However, this disclosure is not limited thereto, and the plasma processing process performed by the substrate processing apparatus 1 may be modified to various known plasma processing processes. When loading the substrate W into the substrate processing apparatus 1, a substrate W on which a processing process has already been partially performed may be loaded. For example, the substrate W loaded into the substrate processing apparatus 1 may be a substrate W on which an etching process or an optical process has already been performed.

[0047] The substrate processing apparatus 1 may include a housing 100, a support unit 200, a spray head 300, an ion blocking member 400, an upper electrode 500, and a gas supply unit 600.

[0048] The chamber 10 may have an internal space. The internal space of the chamber 10 may be divided into an upper first region A1 and a lower second region A2 by a spray head 300 (described later). The chamber 10 may be jointly defined by the components involved that define the first region A1 and the second region A2. The first region A1 may be divided into an upper plasma forming space A11 and a lower mixing space A12 by an ion blocking member 400 (described later).

[0049] The plasma forming space A11 can be defined as the space in which the upper electrode 500 and the ion blocking element 400 (described later) are joined together. The plasma forming space A11 can be configured as the space for generating plasma P. The mixing space A12 can be defined as the space formed by joining the ion blocking element 400 and the spray head 300 together. The mixing space A12 can be configured as the space in which the groups R contained in the plasma P generated in the plasma forming space A11 react with the second gas G2 (described later) to form the etchant E.

[0050] The second region A2 can be defined as the space formed by combining the spray head 300 with the housing 100 (described later). The second region A2 can be defined as a processing space A21 in which the substrate W is processed. The processing space A21 can be the space in which the substrate W is positioned. In the processing space A21, the substrate W can be processed with the group R and / or the etchant E.

[0051] The housing 100 may define a processing space A21. For example, the housing 100 may be combined with a spray head 300 (described later) to define the processing space A21. A support unit 200 (described later) is disposed in the processing space A21 defined by the housing 100. The housing 100 may be configured as a generally cylindrical shape. For example, the housing 100 may be a cylindrical shape with a top opening.

[0052] The inner wall of housing 100 may be coated with a material capable of preventing housing 100 from being etched by plasma P. For example, the inner wall of housing 100 may be coated with a dielectric film, such as ceramic. Housing 110 may be grounded. An opening (not shown) may be formed in housing 100 through which substrate W is unloaded from or loaded into processing space A21. The opening (not shown) may be selectively opened / closed by a door (not shown).

[0053] A discharge port 110 is formed in the bottom surface of the housing 100. The discharge port 110 can be connected to a discharge unit 120. The discharge unit 120 discharges particles and process byproducts flowing through the processing space A21. The discharge unit 120 can regulate the pressure in the processing space A21. The discharge unit 120 may include a discharge line 122 and a pressure-reducing member 124. One end of the discharge line 122 can be connected to the discharge port 110, and the other end of the discharge line 122 can be connected to the pressure-reducing member 124. The pressure-reducing member 124 may be a pump. However, the invention is not limited thereto, and the invention can provide various variations of known devices for providing negative pressure.

[0054] The support unit 200 is located inside the processing space A21. The support unit 200 supports the substrate W within the processing space A21. The support unit 200 can be an electrostatic chuck (ESC) capable of holding the substrate W using electrostatic force. The support unit 200 can heat the supported substrate W.

[0055] The support unit 200 may include a body 210, an electrostatic electrode 220, and a heater 230. The body 210 supports a substrate W. The body 210 has a support surface for supporting the substrate W on its upper surface. The substrate W is disposed on the upper surface of the body 210. The body 210 may be provided with a dielectric material. The body 210 may be configured as a disc-shaped dielectric plate. For example, the body 210 may be made of a ceramic material. The electrostatic electrode 220 and the heater 230, which will be described later, may be embedded in the body 210.

[0056] When viewed from above, the electrostatic electrode 220 can be positioned overlapping the substrate W. The electrostatic electrode 220 can be positioned above the heater 230. The electrostatic electrode 220 is electrically connected to a first power supply 220a. The first power supply 220a may include a direct current (DC) power supply. A first switch 220b is installed between the electrostatic electrode 220 and the first power supply 220a. By turning the first switch 220b on / off, the electrostatic electrode 220 can be electrically connected to the first power supply 220a. For example, when the first switch 220b is on, DC current is applied to the electrostatic electrode 220. When current is applied to the electrostatic electrode 220, an electric field capable of clamping the substrate W can be formed in the electrostatic electrode 220. The electric field can transmit an attractive force to the substrate W, by which the substrate W is clamped in the direction toward the body 210. Therefore, the substrate W is attracted to the body 210.

[0057] Heater 230 heats substrate W. Heater 230 can heat substrate W supported on the upper surface of body 210. Heater 230 heats substrate W by increasing the temperature of body 210. Heater 230 is electrically connected to a second power supply 230a. A second switch 230b is installed between heater 230 and second power supply 230a. Heater 230 can be electrically connected to second power supply 230a by turning the second switch 230b on / off. Heater 230 generates heat by resisting the current applied from second power supply 230a.

[0058] The generated heat is transferred to the substrate W via the body 210. The substrate W can be maintained at the temperature required for the process by the heat generated by the heater 230. Furthermore, the heater 230 raises the temperature of the body 210 to prevent impurities (e.g., oxide films) separated from the substrate W during substrate W processing from re-adhering to the substrate W. The heater 230 can be a heating element, such as tungsten. However, the type of heater 230 is not limited to this, and the heater can be modified in various ways and equipped with known heating elements.

[0059] Although not shown, according to an exemplary embodiment, multiple heaters 230 may be configured as spiral coils. The heaters 230 may be respectively disposed in different regions of the body 210. For example, heaters 230 for heating the central region of the body 210 and heaters 230 for heating the edge regions of the body 210 may be provided, and the heating degree of the heaters 230 may be adjusted independently of each other.

[0060] In the above embodiments, it has been described that the heater 230 is disposed in the body 210, but the present invention is not limited thereto. For example, the heater 230 may not be disposed in the body 210.

[0061] The spray head 300 can be disposed on the upper part of the housing 100. The spray head 300 can be disposed between the ion blocking member 400 and the processing space A21 (described later). The spray head 300 can divide the internal space of the chamber 10 into an upper first region A1 and a lower second region A2. For example, the space formed by the combination of the spray head 300 and the housing 100 can be defined as the processing space A21. In addition, the space formed by the combination of the spray head 300 and the ion blocking member 400 (described later) can be defined as the mixing space A12.

[0062] When viewed from above, the spray head 300 may be formed in a generally circular shape. For example, the spray head 300 may be configured as a disc shape. According to an exemplary embodiment, the spray head 300 may be made of stainless steel.

[0063] A through-hole 302 can be formed in the spray head 300. Multiple through-holes 302 can be provided. The multiple through-holes 302 can be formed to extend from the upper surface to the lower surface of the spray head 300. That is, the multiple through-holes 302 can be formed to pass through the spray head 300. The multiple through-holes 302 can connect fluid from the upper mixing space A12 to the lower processing space A21.

[0064] A lower gas inlet 310 may be formed in the spray head 300. At least one lower gas inlet 310 may be provided. The lower gas inlet 310 may be connected to a second gas line 622 (described later). The lower gas inlet 310 may communicate with gas holes 710 formed in the adsorption plate 700 (described later). The lower gas inlet 310 may supply a second gas G2 (described later) to the mixing space A12. The lower gas inlet 310 may communicate with the mixing space A12, but may also be configured not to communicate with the processing space A21. The lower gas inlet 310 may be provided between a plurality of through holes 302. That is, the lower gas inlet 310 may be formed at a position that does not overlap with the plurality of through holes 302.

[0065] The heating element HE can be disposed in the upper portion of the spray head 300. When viewed from the top, the heating element HE can be a heater with an annular shape. The heating element HE can increase the temperature of the mixing space A12. The heating element HE generates heat to increase the temperature of the mixing space A12, thereby improving the mixing efficiency of plasma P (removing ions from the plasma) and the second gas G2.

[0066] An ion blocking member 400 may be disposed above the spray head 300. Furthermore, the ion blocking member 400 may be disposed above the heating member HE. The ion blocking member 400 may be disposed between the spray head 300 and the upper electrode 500 (described later). The ion blocking member 400 can divide the first region A1 into an upper plasma formation space A11 and a lower mixing space A12. For example, the space formed by the combination of the ion blocking member 400, the spray head 300, and the heating member HE can be defined as the mixing space A12. For example, the space formed by the combination of the ion blocking member 400, the adsorption plate 700 (described later), and the heating member HE can be defined as the mixing space A12.

[0067] The ion blocking element 400 can be grounded. The ion blocking element 400 can be used as an electrode opposite to the upper electrode 500 (described later). Therefore, the ion blocking element 400 can be used as a plasma source to form plasma P together with the upper electrode 500.

[0068] A hole 402 can be formed in the ion barrier 400. The hole 402 can pass through the upper and lower ends of the ion barrier 400. The plasma P formed in the plasma formation space A11 can flow from the plasma formation space A11 to the mixing space A12 through the hole 402. The ion barrier 400 can adsorb ions (or electrons) included in the plasma P that pass through the hole 402, as well as ions and electrons from the group R. Therefore, only the group R among the components contained in the plasma P can pass through the ion barrier 400. The ion barrier 400 can function to block ions from passing through.

[0069] The upper electrode 500 may have a plate shape. The upper electrode 500 may be located above the internal space of the chamber 10. The upper electrode 500 may be positioned above the ion blocking member 400. The upper electrode 500 may be positioned facing the ion blocking member 400. An insulating member DR made of insulating material may be disposed between the upper electrode 500 and the ion blocking member 400. When viewed from above, the insulating member DR may have an annular shape. The insulating member DR electrically insulates the ion blocking member 400 and the upper electrode 500 from each other. The space formed by the upper electrode 500, the insulating member DR, and the ion blocking member 400 may be defined as the plasma formation space A11.

[0070] A power module 510 may be disposed on the upper electrode 500. The power module 510 may apply power to the upper electrode 500. The power module 510 may include an upper power supply 512 and an upper power switch 514. The upper power supply 512 may be configured as an RF power supply. The upper power supply 512 may apply a high-frequency current to the upper electrode 500. An impedance matching device (not shown) may be disposed between the upper electrode 500 and the upper power supply 512. A high-frequency current is applied to the upper electrode 500 according to the on / off state of the upper power switch 514. When a high-frequency current is applied to the upper electrode 500, an electric field is formed between the ion blocking member 400, which serves as a counter electrode, and the upper electrode 500. Therefore, plasma can be generated by exciting a first gas G1 (described later) in the plasma formation space A11.

[0071] An upper gas inlet 520 may be formed in the upper electrode 500. At least one upper gas inlet 520 may be provided. The upper gas inlet 520 may be connected to a first gas line 612 (described later). The upper gas inlet 520 may supply the first gas G1 toward the plasma formation space A11.

[0072] Gas supply unit 600 supplies gas to the internal space of chamber 10. For example, gas supply unit 600 may supply a first gas G1 to plasma formation space A11 and a second gas G2 to mixing space A12. Gas supply unit 600 may include a first gas supply unit 610 and a second gas supply unit 620. Hereinafter, the gas supplied by the first gas supply unit 610 is defined as the first gas G1, and the gas supplied by the second gas supply unit 620 is defined as the second gas G2. The first gas G1 may be referred to as a process gas. The second gas G2 may be referred to as a treatment gas.

[0073] The first gas supply unit 610 supplies a first gas G1 to the plasma forming space A1. The first gas supply unit 610 can also supply the first gas G1 to the plasma forming space A11, which is the space between the upper electrode 500 and the ion blocking member 400. The first gas supply unit 610 may include a first gas line 612 and a first gas supply source 614.

[0074] The first gas line 612 connects the first gas supply source 624 and the upper gas inlet 520 to each other. One end of the first gas line 612 can be connected to each of the plurality of upper gas inlets 520, and the other end of the first gas line 612 can be connected to the first gas supply source 612.

[0075] A first gas supply source 614 supplies a first gas G1 to the plasma formation space A11 via a first gas line 612. The first gas G1 may include fluorine-based elements. For example, the first gas G1 may be nitrogen trifluoride (NF3) or fluorine (F2) gas. Optionally, the first gas G1 may further include any one or more of Ar, H2, and He. The first gas G1 supplied to the plasma formation space A11 can be excited by the upper electrode 500 and the ion blocking device 400.

[0076] The second gas supply unit 620 can supply the second gas G2 to the mixing space A12. The second gas supply unit 620 can supply the second gas G2 to the mixing space A12, which is the space between the ion blocking member 400 and the spray head 300. For example, the second gas supply unit 620 can supply the second gas G2 to the mixing space A12, which is the space between the ion blocking member 400 and the adsorption plate 700 (described later). The second gas supply unit 620 may include a second gas line 622 and a second gas supply source 624.

[0077] The second gas line 622 connects the second gas supply source 624 and the lower gas inlet 310 to each other. One end of the second gas line 622 can be connected to each of the plurality of lower gas inlets 310, and the other end of the second gas line 622 can be connected to the second gas supply source 624.

[0078] The second gas supply source 624 supplies the second gas G2 to the mixing space A12 via the second gas line 622. The second gas G2 may include hydrogen-based elements. For example, the second gas G2 may be ammonia (NH3). Optionally, the second gas G2 may further include an inert gas, such as H2 or He. The inert gas included in the second gas G2 can be used as a carrier gas. The second gas G2 supplied to the second space A2 can react with the group R to form the etchant E.

[0079] Figure 2 It schematically shows the view from the front. Figure 1 A diagram of the spray head and adsorption plate. Refer to the following text. Figure 1 and Figure 2 The adsorption plate according to an exemplary embodiment of the present invention is described in detail.

[0080] The adsorption plate 700 can be attached to the spray head 300. The adsorption plate 700 can be attached to the upper surface of the spray head 300. The lower surface of the adsorption plate 700 can contact the upper surface of the spray head 300. The adsorption plate 700 can be configured to be detachable from the spray head 300. The adsorption plate 700 can be configured as a generally disc-shaped device. As an example, the adsorption plate 700 can be configured as a disc shape with a small thickness. When viewed from above, the adsorption plate 700 can have a shape substantially corresponding to the spray head 300, and the adsorption plate 700 can have a diameter corresponding to the spray head 300.

[0081] The adsorption plate 700 can be coated. The surface of the adsorption plate 700 can be coated with a material that adsorbs specific groups R. For example, groups R included in the plasma P generated in the plasma formation space A11 can be adsorbed onto the surface of the adsorption plate 700. According to an exemplary embodiment, the surface of the adsorption plate 700 can be coated with a material including nickel (Ni). Alternatively, the surface of the adsorption plate 700 can also be coated with a material including titanium (Ti). The material coated on the surface of the adsorption plate 700 can be a different material than that of the spray head 300.

[0082] The adsorption plate 700 can absorb components including ultraviolet (UV) light flowing through the mixing space A12. Furthermore, the adsorption plate 700 can block components including UV light from flowing from the mixing space A12 to the processing space A21. The detailed mechanism of the adsorption of group R by the adsorption plate 700 will be described later.

[0083] Gas holes 710 and adsorption holes 720 can be formed in the adsorption plate 700. At least one gas hole 710 can be provided. The gas hole 710 can pass through the adsorption plate in the vertical direction. The gas hole 710 can communicate with the lower gas inlet 310. The gas hole 710 can be formed at a position overlapping with the lower gas inlet 310, at which position the adsorption plate 700 is connected to the spray head 300. The gas hole 710 can allow the second gas G2 supplied from the lower gas inlet 310 to flow into the mixing space A12.

[0084] At least one adsorption hole 720 may be provided. For example, multiple adsorption holes 720 may be provided. The adsorption hole 720 may be formed to penetrate from the upper surface to the lower surface of the adsorption plate 700. When viewed from the top, the adsorption hole 720 may be positioned to overlap with the through hole 302 formed in the spray head 300. The diameter of the adsorption hole 720 may be set to be relatively larger than the diameter of the through hole 302. Optionally, the diameter of the adsorption hole 720 may be set to correspond to the diameter of the through hole 302. The etchant E formed in the mixing space A12 may be supplied to the processing space A21 through the adsorption hole 720. Furthermore, the groups R flowing through the mixing space A12 may pass through the adsorption hole 720 and be supplied to the processing space A21. This mechanism will be described in detail below.

[0085] In the above embodiments, as an example, it has been described that the adsorption plate 700 is connected to the upper surface of the spray head 300, but the present invention is not limited thereto. For example, the adsorption plate 700 may be connected to each of the upper and lower surfaces of the spray head 300. Optionally, the adsorption plate 700 may be connected to the lower surface of the spray head 300.

[0086] The substrate processing method according to an exemplary embodiment of the present invention will be described in detail below. The substrate processing method described below can be implemented according to reference. Figure 1 and Figure 2 The substrate processing apparatus 1 of the exemplary embodiment described is carried out.

[0087] The substrate W used in the substrate processing method described below may have a first film and a second film. The first film may be a silicon oxide film (e.g., SiO2). Additionally, the second film may be various films formed on the substrate W, such as a polycrystalline silicon film or a nitride film. However, this is for ease of description, and various films may be stacked on the substrate W to be formed.

[0088] Figure 3 To illustrate, the method of stimulating Figure 1 A diagram showing the state in which plasma is formed in the plasma formation space by the first gas in the substrate processing apparatus. (Refer to...) Figure 3 The first gas supply unit 610 supplies a first gas G1 to the plasma formation space A11. The first gas G1 can be supplied to the plasma formation space A11 through an upper gas inlet 520 formed in the upper electrode 500. According to an exemplary embodiment of the present invention, the first gas G1 may include fluorine. For example, the first gas G1 supplied to the plasma formation space A11 may be a gas including nitrogen trifluoride (NF3). Furthermore, an inert gas may also be supplied to the plasma formation space A11. The inert gas supplied to the plasma formation space A11 can be used as a carrier gas.

[0089] The first gas G1 supplied to the plasma formation space A11 is excited into plasma P by the upper electrode 500 and the grounded ion blocking device 400, which are subjected to high-frequency power. That is, when the first gas G1 is transformed into plasma P state, the first gas G1 is decomposed into ions, electrons, and radicals. For example, when nitrogen trifluoride (NF3) gas is transformed into plasma P state, F radicals may be formed in plasma formation space A11.

[0090] The plasma P formed in the plasma forming space A11 flows into the mixing space A12 through the hole 402 formed in the grounded ion blocking member 400. As the plasma P passes through the hole 402, ions and electrons in the composition of the plasma P are absorbed. When the plasma P passes through the ion blocking member 400, only the ions, electrons, and radicals included in the plasma P can be supplied to the mixing space A12. Therefore, only F radicals can be supplied to the mixing space A12.

[0091] Figure 4 To illustrate, it is shown that by... Figure 1 The diagram shows the state in which a second gas is supplied to the mixing space of the substrate processing apparatus to form an etchant. Figure 5 for Figure 4 An enlarged view of part A in the middle. Figure 5 The illustration schematically shows the adsorption of radicals flowing in the mixing space of the substrate processing apparatus onto the adsorption plate.

[0092] Reference Figure 4 and Figure 5 The second gas supply unit 620 supplies a second gas G2 to the mixing space A12. The second gas G2 can be supplied to the mixing space A12 through a lower gas inlet 310 formed in the spray head 300 and through gas holes 710 formed in the adsorption plate 700. According to an exemplary embodiment of the invention, the second gas G2 may include hydrogen. For example, the second gas G2 supplied to the mixing space A12 may be a gas including ammonia (NH3). Furthermore, an inert gas may also be supplied to the mixing space A12. The inert gas supplied to the mixing space A12 can be used as a carrier gas.

[0093] Some components of the group R supplied to the mixing space A12 can react with the second gas G2 supplied to the mixing region A12. For example, ammonia (NH3) supplied to the mixing space A12 can react with the F group flowing through the mixing space A12 to form etchant E. Etching agent E can be ammonium fluoride (NH4F). Optionally, etchant E can be ammonium hydrogen fluoride (NH4F·HF).

[0094] The etchant E generated in the mixing space A12 flows from the mixing space A12 to the processing space A21. The etchant E can act on the substrate W positioned in the processing space A21. In the first and second films formed on the substrate W, the first film and the etchant E can interact with each other. For example, NH4F can react with the silicon oxide film (e.g., SiO2) formed on the substrate W to generate a reactant (NH4)2SiF6. The generated reactant can be removed from the substrate W. Therefore, the etchant E supplied to the processing space A21 can act on the first film formed on the substrate W to remove the first film from the substrate W.

[0095] Furthermore, some other components of the group R supplied to the mixing space A12 come into contact with the surface of the adsorption plate 700 positioned below the mixing space A12. The group R in contact with the surface of the adsorption plate 700 can be adsorbed onto the adsorption plate 700.

[0096] For example, the surface of the adsorption plate 700 according to an exemplary embodiment of the present invention can be made of nickel (Ni). Hydrogen ions derived from an inert gas including hydrogen are adsorbed onto the surface of the adsorption plate 700, and the hydrogen ions can be re-bonded to F groups. Therefore, some components of the F groups flowing in the mixing space A12 can be adsorbed onto the adsorption plate 700. The position of the adsorbed F groups is fixed in the mixing space A12. Therefore, the F groups adsorbed on the adsorption plate 700 will not flow into the processing space A21. That is, since the adsorption plate 700 adsorbs F groups, the amount of F groups supplied to the processing space A21 and acting on the substrate W can be reduced.

[0097] Some other components of the group R supplied to the mixing space A12 may not be adsorbed on the surface of the adsorption plate 700 and may not react with the second gas G2. That is, other components of the group R supplied to the mixing space A12 can flow from the mixing space A12 to the processing space A21. For example, the F group supplied to the processing space A21 can react with the second film in the first and second films formed on the substrate W. For example, the F group can react with the polycrystalline silicon film formed on the substrate W to generate SiF4 reactants. The generated reactants can be removed from the substrate W. Therefore, the groups supplied to the processing space A21 can act on the second film formed on the substrate W to remove the second film from the substrate W.

[0098] Typically, various films, including natural oxide films, can be stacked on a substrate W. In various processes using plasma treatment of the substrate W, each process requires appropriate selectivity. The selectivity is determined based on the degree of etching of the film formed on the substrate W. The film formed on the substrate W can be etched by etchant E and groups R. The target etched by etchant E and the target etched by groups R are different.

[0099] Therefore, according to an exemplary embodiment of the present invention, by using the adsorption plate 700 to adsorb the groups R included in the plasma P, the number of groups acting on the substrate W can be reduced. Thus, a relatively small amount of groups R can act on the substrate W. On the other hand, the etchant E generated by the reaction of groups R and the second gas G2 in the mixing space A12 can act on the substrate W in a relatively larger amount. Therefore, the selectivity between the film etched by groups R (e.g., the second film) and the film etched by etchant E (e.g., the first film) formed on the substrate W can be easily adjusted.

[0100] Furthermore, in an exemplary embodiment, the invention is described as an example where the surface of the adsorption plate 700 is coated with a nickel (Ni) material to adsorb F groups contained in plasma (P). The adsorption plate 700 according to the embodiment can be detachably disposed from the spray head 300. Moreover, the surface material of the adsorption plate 700 can be varied depending on the type of groups to be adsorbed. Therefore, depending on the selectivity of the substrate required for various processes, the selectivity can be readily adjusted by replacing the adsorption plate with an adsorption plate 700 coated with a suitable material, and the selectivity ratio can be readily adjusted.

[0101] Except as otherwise described, a substrate processing apparatus according to another exemplary embodiment of the invention described below is provided in a manner substantially similar to the configuration of the substrate processing apparatus described above. Therefore, to avoid repetition, descriptions of repeated configurations will be omitted.

[0102] Figure 6 To illustrate, according to Figure 1 A diagram of a substrate processing apparatus according to another exemplary embodiment. (Refer to...) Figure 6 The spray head 300 may have a generally circular shape when viewed from above. For example, the spray head 300 may be configured as a disc shape. According to an exemplary embodiment, the spray head 300 may be made of stainless steel.

[0103] A through-hole 302 can be formed in the spray head 300. Multiple through-holes 302 can be provided. The multiple through-holes 302 can be formed to extend from the upper surface to the lower surface of the spray head 300. That is, the multiple through-holes 302 can be formed to pass through the spray head 300. The multiple through-holes 302 can connect fluid from the upper mixing space A12 to the lower processing space A21.

[0104] An orifice 402 and a central gas inlet 410 may be formed in the ion barrier 400. The orifice 402 may pass through the upper and lower ends of the ion barrier 400. At least one central gas inlet 410 may be provided. Multiple central gas inlets 410 may be provided. Each of the multiple central gas inlets 410 may be connected to a second gas line 622. The central gas inlet 410 may supply the second gas G2 to the mixing space A12. The central gas inlet 410 may communicate with the mixing space A12, but may be configured not to communicate with the upper plasma forming space A11.

[0105] Adsorption holes 720 can be formed in the adsorption plate 700. At least one adsorption hole 720 can be provided. For example, multiple adsorption holes 720 can be provided. The adsorption holes 720 can be formed to penetrate from the upper surface to the lower surface of the adsorption plate 700. When viewed from above, the adsorption holes 720 can be positioned to overlap with through holes 302 formed in the spray head 300. The diameter of the adsorption holes 720 can be set to be relatively larger than the diameter of the through holes 302. Optionally, the diameter of the adsorption holes 720 can be set to correspond to the diameter of the through holes 302.

[0106] Figure 7 To illustrate, according to Figure 1 A diagram of a substrate processing apparatus according to another exemplary embodiment. (Refer to...) Figure 7 The spray head 300 may have a generally circular shape when viewed from above. For example, the spray head 300 may be configured as a disc shape. According to an exemplary embodiment, the spray head 300 may be made of stainless steel.

[0107] A through-hole 302 can be formed in the spray head 300. Multiple through-holes 302 can be provided. The multiple through-holes 302 can be formed to extend from the upper surface to the lower surface of the spray head 300. That is, the multiple through-holes 302 can be formed to pass through the spray head 300. The multiple through-holes 302 can connect fluid from the upper mixing space A12 to the lower processing space A21.

[0108] A lower gas inlet 310 may be formed in the spray head 300. At least one lower gas inlet 310 may be provided. Multiple lower gas inlets 310 may be provided. Each of the multiple lower gas inlets 310 may be connected to a first branch line 646 (described later). The lower gas inlet 310 may communicate with gas holes 710 formed in the adsorption plate 700. The lower gas inlet 310 may supply a second gas G2 to the mixing space A12. The lower gas inlet 310 may communicate with the mixing space A12, but may also be configured not to communicate with the processing space A21. The lower gas inlet 310 may be located between multiple through holes 302. That is, the lower gas inlet 310 may be formed at a position that does not overlap with the multiple through holes 302.

[0109] An orifice 402 and a central gas inlet 410 may be formed in the ion barrier 400. The orifice 402 may pass through the upper and lower ends of the ion barrier 400. At least one central gas inlet 410 may be provided. Multiple central gas inlets 410 may be provided. Each of the multiple central gas inlets 410 may be connected to a second branch line 627 (described later). The central gas inlet 410 may supply the second gas G2 to the mixing space A12. The central gas inlet 410 may communicate with the mixing space A12, but may be configured not to communicate with the upper plasma forming space A11.

[0110] The second gas supply unit 620 may include a second gas pipeline 622 and a second gas supply source 624. The second gas pipeline 622 may include a main pipeline 625, a first branch pipeline 626, and a second branch pipeline 627. One end of the main pipeline 625 is connected to the second gas supply source 624 for supplying the second gas G2. The other end of the main pipeline 625 may branch into a first branch pipeline 646 and a second branch pipeline 625. The first branch pipeline 646 may be connected to a lower gas inlet 310. The second gas G2 supplied to the lower gas inlet 310 via the main pipeline 625 and the first branch pipeline 626 may be supplied to the mixing space A12. The second branch pipeline 647 may be connected to a central gas inlet 410. The second gas G2 supplied to the central gas inlet 410 via the main pipeline 625 and the second branch pipeline 627 may be supplied to the mixing space A12.

[0111] Gas holes 710 and adsorption holes 720 can be formed in the adsorption plate 700. At least one gas hole 710 can be provided. The gas hole 710 can pass through the adsorption plate in the vertical direction. The gas hole 710 can communicate with the lower gas inlet 310. The gas hole 710 can be formed at a position overlapping with the lower gas inlet 310, at which position the adsorption plate 700 is connected to the spray head 300. The gas hole 710 can allow the second gas G2 supplied from the lower gas inlet 310 to flow into the mixing space A12.

[0112] At least one adsorption hole 720 may be provided. For example, multiple adsorption holes 720 may be provided. The adsorption hole 720 may be formed to penetrate from the upper surface to the lower surface of the adsorption plate 700. When viewed from above, the adsorption hole 720 may be positioned to overlap with a through hole 302 formed in the spray head 300. The diameter of the adsorption hole 720 may be set to be relatively larger than the diameter of the through hole 302. Alternatively, the diameter of the adsorption hole 720 may be set to correspond to the diameter of the through hole 302.

[0113] Unlike the exemplary embodiments described above, the lower gas inlet 310 may be formed only in the edge region of the spray head 300. Furthermore, the central gas inlet 410 may be formed only in the central region of the ion barrier 400.

[0114] According to reference Figure 6 and Figure 7 In the exemplary embodiment of the invention described, the second gas G2 and the group R can react efficiently in the mixing space A12. Therefore, the amount of etchant E acting on the substrate W can be relatively increased compared to the amount of group R acting on the substrate W.

[0115] The foregoing detailed description illustrates the present invention. Furthermore, the foregoing has shown and described exemplary embodiments of the invention, and the invention can be used in various other combinations, modifications, and environments. That is, modifications or alterations can be made to the foregoing within the scope of the inventive concept disclosed herein, the scope equivalent to this disclosure, and / or the scope of technology or knowledge in the art. The foregoing exemplary embodiments describe the optimal state for carrying out the technical spirit of the invention, and various changes are possible in specific fields and uses of the invention. Therefore, the foregoing detailed description of the invention is not intended to limit the invention to the disclosed exemplary embodiments. Furthermore, the appended claims should also be interpreted to include other exemplary embodiments.

Claims

1. A substrate processing apparatus, the substrate processing apparatus comprising: A chamber having an internal space; A spray head, which is used to divide the internal space into an upper first region and a lower second region, and the spray head has a plurality of through holes; A support unit for supporting a substrate in the second region, the substrate having a first film and a second film different from the first film; A gas supply unit, the gas supply unit being used to supply gas to the first area; A plasma source, the plasma source being used to generate plasma in the first region by exciting the gas; as well as An adsorption plate is attached to the upper surface of the spray head. The plasma source includes: An ion blocking element, disposed above the spray head to divide the first region into an upper plasma forming space and a lower mixing space, and the ion blocking element is grounded; and An upper electrode is disposed above the ion blocking element and power is applied to the upper electrode; The gas supply unit includes: A first gas supply unit, the first gas supply unit being used to supply a first gas to the plasma forming space; and A second gas supply unit is used to supply a second gas to the mixing space, and The plasma source excites the first gas to form the plasma, and The ion blocking element captures ions included in the plasma formed in the plasma forming space and allows groups to enter the mixing space, wherein the second gas is capable of reacting with the groups in the mixing space to form an etchant; The surface of the adsorption plate is provided with a material that adsorbs the groups contained in the plasma; The adsorption plate adsorbs a portion of the groups that have entered the mixing space through the ion barrier onto its surface, thereby removing the portion of the groups in the mixing space without them flowing into the second region. Among them, another portion of the groups that have passed through the ion barrier can pass through the spray head to remove the second film, and the etchant can pass through the spray head to remove the first film.

2. The substrate processing apparatus according to claim 1, wherein, The surface of the adsorption plate is made of a material different from that of the spray head.

3. The substrate processing apparatus according to claim 2, wherein, The gas contains fluorine, and The group contains a fluorine group.

4. The substrate processing apparatus according to claim 3, wherein, The material of the adsorption plate includes nickel (Ni) or titanium (Ti), and The adsorption plate adsorbs the fluorine groups.

5. The substrate processing apparatus according to claim 4, wherein, The gas further contains hydrogen ions. The adsorption plate adsorbs hydrogen ions from the gas.

6. The substrate processing apparatus according to claim 1, wherein, The adsorption plate is configured to be detachable from the spray head.

7. The substrate processing apparatus of claim 6, wherein, Multiple adsorption pores are formed in the adsorption plate. Furthermore, the adsorption pore is positioned to overlap with the through hole when viewed from the top.

8. A substrate processing apparatus, the substrate processing apparatus comprising: A chamber having an internal space; A support unit for supporting the substrate in the internal space, the substrate having a first film and a second film different from the first film; Upper electrode, to which high-frequency power is applied; An ion blocking device is disposed below the upper electrode and grounded; A spray head is disposed below the ion blocking member and above the support unit, and has multiple through holes. A first gas supply unit is used to supply a first gas to the space between the upper electrode and the ion blocking member; The second gas supply unit is used to supply a second gas into the space between the ion blocking member and the spray head; as well as An adsorption plate is disposed on the upper surface of the spray head. The region between the upper electrode and the ion blocking device is configured as a plasma forming space, in which plasma is formed by the first gas; The region between the ion barrier and the spray head is configured as a mixing space, in which groups present in the plasma react with the second gas to form an etchant. A substrate processing area is provided below the spray head, and the substrate is processed in the substrate processing area by the etchant. The surface of the adsorption plate is provided with a material capable of adsorbing specific ions and groups contained in the plasma; The grounded ion barrier traps ions contained in the plasma and allows the groups to pass through to the mixing space. The adsorption plate adsorbs a portion of the groups that have passed through the ion barrier into the mixing space onto its surface, thereby removing the portion of the groups in the mixing space. Among them, another portion of the groups that have passed through the ion barrier can pass through the spray head to remove the second film, and the etchant can pass through the spray head to remove the first film.

9. The substrate processing apparatus according to claim 8, wherein, The specific ions include hydrogen ions, and The group includes a fluorine group.

10. The substrate processing apparatus according to claim 9, wherein, The material includes nickel (Ni) or titanium (Ti).

11. The substrate processing apparatus according to claim 9, wherein, The adsorption plate is configured to be detachable from the spray head. Multiple adsorption pores are formed in the adsorption plate, and The adsorption pore is positioned to overlap with the through hole when viewed from the top. The diameter of the adsorption pore is set to be larger than the diameter of the through hole.

12. A method of processing a substrate, the substrate having a first film and a second film different from the first film, the method comprising: Plasma is generated in a first space within the chamber by exciting a first gas. The plasma flows through holes formed in a grounded ion barrier located above the spray head, and the ion barrier blocks ions and electrons contained in the plasma, allowing the plasma to flow into a second space within the chamber. Some components of the groups that have flowed into the second space are adsorbed onto the surface of the adsorption plate disposed at the lower part of the second space and removed. In this process, some other components of the groups supplied to the second space react with the second gas supplied to the second space to form an etchant, and Some other components of the group supplied to the second space flow into the third space, where the substrate is located; The surface of the adsorption plate is coated with a material capable of adsorbing the radical groups; The etchant is supplied to the third space to remove the first film from the first film and the second film, and the groups flowing into the third space remove the second film from the first film and the second film.

13. The method according to claim 12, wherein, The first membrane comprises an oxide membrane. The first gas contains fluorine. The second gas contains ammonia. The group includes a fluorine group.

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