Apparatus for processing a substrate

Abstract

An exemplary embodiment of the present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate includes a process chamber having a processing space therein, a support unit for supporting the substrate in the processing space, a gas supply unit for supplying a process gas to the processing space, and a microwave application unit for applying a microwave to the process gas to generate a plasma, wherein the microwave application unit includes a transmission plate disposed above the support unit to radiate a microwave to the processing space, a first waveguide disposed above the transmission plate, and a first power supplier for applying a microwave to the first waveguide, wherein the first waveguide is disposed in a ring shape.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2021-0190310, filed with the Korean Intellectual Property Office on December 28, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present invention relates to an apparatus for processing a substrate, and more particularly to an apparatus for processing a plasma-processed substrate. Background Technology

[0004] Plasma refers to an ionized gaseous state composed of ions, free radicals, and electrons. Plasma is generated by extremely high temperatures, strong electric fields, or radio frequency (RF) electromagnetic fields. In semiconductor device manufacturing processes, plasma is used to perform various processes.

[0005] Figure 1 A diagram illustrating a typical substrate processing apparatus using microwave processing of a substrate is provided for illustrative purposes. (Refer to...) Figure 1 The substrate W is supported in the processing space 1001 of the process chamber 1000, and microwaves are used to excite the processing gas supplied to the processing space 1001 into plasma to process the substrate W. An antenna plate 1100 with a slot 1102 is disposed in the upper region of the substrate W. A dielectric plate 1200 is disposed above the antenna plate 1100, and a transmission plate 1300 is disposed below the antenna plate 1100. When microwaves are applied to the antenna plate 1100, the microwaves are transmitted radially along the antenna plate 1100 and then through the slot 1102 and the transmission plate 1300 to the processing space 1001.

[0006] When using Figure 1 The substrate processing apparatus shown in the diagram is accompanied by a complex structure of components positioned above the processing space 1001. Numerous space constraints exist in the upper region of the processing space 1001. Furthermore, due to the structure of the antenna plate 1100, dielectric plate 1200, and transmission plate 1300, processing gas cannot be supplied from the upper part of the processing space 1001. Consequently, the processing gas cannot be supplied smoothly into the processing space 1001, thereby compromising the uniformity of the plasma formed within the processing space 1001.

[0007] Furthermore, the antenna plate 1100 has a thin thickness to smoothly transmit microwaves toward the transmission plate 1300. Microwaves transmitted to the antenna plate 1100 generate an electric current as they pass through the slot 1102. This current generation heats the antenna plate 1100, causing thermal deformation of the upper structure. Further installation of cooling structures to suppress this heat generation increases the structural complexity of the upper space. Without heat suppression, the thin antenna plate 1100 may deform, preventing the microwaves from being smoothly transmitted to the processing space 1001. Summary of the Invention

[0008] The present invention aims to provide an apparatus for processing substrates that can effectively process substrates.

[0009] The present invention also aims to provide an apparatus for processing substrates that can minimize the structural complexity of the substrate processing device.

[0010] The present invention also aims to provide an apparatus for processing substrates that can minimize component deformation caused by heat generated during microwave transmission.

[0011] The present invention also aims to provide an apparatus for processing a substrate, which can uniformly supply processing gas to a processing space where a substrate is to be processed.

[0012] The problems to be solved by the present invention are not limited to those described above, and those skilled in the art will clearly understand from this specification and the accompanying drawings any problems not mentioned.

[0013] An exemplary embodiment of the present invention provides an apparatus for processing a substrate. The apparatus includes: a process chamber having a processing space; a support unit for supporting the substrate in the processing space; a gas supply unit for supplying processing gas to the processing space; and a microwave application unit for applying microwaves to the processing gas to generate plasma, wherein the microwave application unit includes a transmission plate disposed above the support unit to radiate microwaves into the processing space; a first waveguide disposed above the transmission plate; and a first power supply for applying microwaves to the first waveguide, wherein the first waveguide may be configured in a ring shape.

[0014] In an exemplary embodiment, the first waveguide may be configured in an annular shape relative to the center of the transmission plate, and when viewed from above, the first waveguide is connected to the first power supply at a location spaced apart from the center of the transmission plate.

[0015] In an exemplary embodiment, the first waveguide may be positioned facing the edge region of the transmission board, and the first waveguide has a cutout portion.

[0016] In an exemplary embodiment, the first power supply may be coupled to a surface of the first waveguide that is adjacent to a cutout surface of the first waveguide.

[0017] In an exemplary embodiment, a plurality of first slots may be formed on the lower surface of the first waveguide, and the first slots may be spaced apart from each other along the circumferential direction of the first waveguide.

[0018] In an exemplary implementation, when the first waveguide is viewed from the front section, these first slots can be arranged in multiple rows.

[0019] In an exemplary embodiment, the microwave application unit may further include: a second waveguide disposed above the transmission plate in a region including the center of the transmission plate; and a second power supply configured to apply microwaves to the second waveguide, wherein at least one or more second slots may be formed on the lower surface of the second waveguide.

[0020] In an exemplary embodiment, the intensity of the microwave applied from the first power supply to the first waveguide may be different from the intensity of the microwave applied from the second power supply to the second waveguide.

[0021] In an exemplary embodiment, the gas channel through which the processing gas flows can be formed in the transmission plate, and when viewed from above, the gas channel can be formed at a location that does not overlap with the first waveguide and the second waveguide.

[0022] In an exemplary embodiment, the first waveguide may be configured to surround a portion of the upper edge region of the transmission plate, and the microwave application unit may further include a third waveguide configured to surround another portion of the upper edge region of the transmission plate, and the third waveguide combined with the first waveguide to form an annular shape, and the third waveguide having a plurality of third slots formed on the lower surface of the third waveguide; and a third power supply configured to apply microwaves to the third waveguide.

[0023] In an exemplary embodiment, the first waveguide may be made of a metallic material, and the transmission plate may be made of a material containing quartz.

[0024] Another exemplary embodiment of the present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate may include: a chamber having a processing space formed therein; a support unit for supporting the substrate in the processing space; and a microwave application unit for applying microwaves to a processing gas supplied to the processing space to generate plasma, wherein the microwave application unit may include a transmission plate disposed above the support unit and transmitting first microwaves to the processing space; a first waveguide disposed above the transmission plate and in which the first microwaves flow; and a first power supply for applying the first microwaves to the first waveguide, wherein a plurality of first slots through which the first microwaves flow may be formed on the lower surface of the first waveguide due to the transmission plate, and the first slots are spaced apart from each other along the circumferential direction of the first waveguide.

[0025] In an exemplary implementation, these first slots can be configured as multiple ring shapes.

[0026] In an exemplary embodiment, the first waveguide may be positioned facing the edge region of the transmission plate, and the first waveguide may have a cutout portion, thereby setting the first waveguide into a discontinuous loop shape.

[0027] In an exemplary embodiment, the microwave application unit may further include a second waveguide disposed above the transmission plate in a region including the center of the transmission plate; and a second power supply for applying a second microwave to the second waveguide, wherein at least one or more second slots may be formed on the lower surface of the second waveguide.

[0028] In an exemplary embodiment, the first waveguide may be configured to surround a portion of the upper edge region of the transmission plate, and the microwave application unit may further include a third waveguide configured to surround another portion of the upper edge region of the transmission plate, and the third waveguide combined with the first waveguide to form an annular shape, and the third waveguide having a plurality of third slots formed on the lower surface of the third waveguide; and a third power supply for applying third microwaves to the third waveguide.

[0029] In an exemplary embodiment, the first waveguide, the second waveguide, and the third waveguide may respectively be in surface contact with the upper surface of the transmission plate.

[0030] In an exemplary embodiment, the gas channel through which the processing gas flows can be formed in the transmission plate, and when viewed from above, the gas channel can be formed at a location that does not overlap with the first waveguide, the second waveguide, and the third waveguide.

[0031] Another exemplary embodiment of the present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate may include: a process chamber having a processing space formed therein; a support unit for supporting the substrate in the processing space; a gas supply unit for supplying processing gas to the processing space; a transmission plate disposed above the support unit; a first waveguide disposed above the transmission plate and having a plurality of first slots formed on its lower surface; a second waveguide disposed above the transmission plate in a region including the center of the transmission plate and having at least one or more second slots formed on its lower surface; a first power supply for applying first microwaves to the first waveguide; and a second power supply for applying second microwaves to the second waveguide, wherein the first waveguide may have an annular shape with a slit portion.

[0032] In an exemplary embodiment, the gas channel through which the processing gas flows can be formed in the transmission plate, and when viewed from above, the gas channel can be formed at a location that does not overlap with the first waveguide and the second waveguide.

[0033] According to an exemplary embodiment of the present invention, the substrate can be processed effectively.

[0034] Furthermore, according to an exemplary embodiment of the present invention, the structural complexity of the substrate processing apparatus can be minimized.

[0035] Furthermore, according to an exemplary embodiment of the present invention, component deformation caused by heat generated during microwave transmission can be minimized.

[0036] Furthermore, according to an exemplary embodiment of the present invention, the processing gas can be uniformly supplied to the processing space where the substrate is to be processed.

[0037] The effects of this invention are not limited to those described above, and those skilled in the art will clearly understand from this specification and the accompanying drawings any effects not mentioned. Attached Figure Description

[0038] Figure 1 The illustration shows a typical substrate processing apparatus for illustrative purposes.

[0039] Figure 2 An illustration of a substrate processing apparatus according to an exemplary embodiment of the present invention is shown for illustrative purposes.

[0040] Figure 3 To illustrate, according to Figure 2 A perspective view of the transmission board and the first waveguide of an exemplary embodiment.

[0041] Figure 4 This is an illustrative representation of what it looks like when viewed from above. Figure 3 A diagram of the transmission board and the first waveguide.

[0042] Figure 5A and Figure 5B This illustrates the role of microwaves in... Figure 3 A diagram illustrating the flow state in the first waveguide and transmission plate.

[0043] Figure 6 and Figure 7 To illustrate, this shows the effect when viewed from above. Figure 2 A diagram of the first waveguide of another exemplary embodiment.

[0044] Figure 8 An illustration of a substrate processing apparatus according to another exemplary embodiment of the present invention is shown for illustrative purposes.

[0045] Figure 9 To illustrate, according to Figure 8 A perspective view of the transmission board and waveguide of an exemplary embodiment.

[0046] Figure 10 This is an illustrative representation of what it looks like when viewed from above. Figure 9 The diagram shows the transmission board and waveguide.

[0047] Figure 11 To illustrate, according to Figure 8 A diagram of the transmission board and waveguide of another exemplary embodiment. Detailed Implementation

[0048] In the following description, exemplary embodiments of the invention will be described in more detail with reference to the accompanying drawings. The exemplary embodiments of the invention may be modified in various ways, and the scope of the invention should not be construed as limited to the exemplary embodiments described below. These exemplary embodiments are provided to explain the invention more fully to those skilled in the art. Therefore, the shapes of components, etc., in the drawings are exaggerated for clearer description.

[0049] Terms such as "first" and "second" are used to describe various component elements, but these component elements are not limited by these terms. These terms are only used to distinguish one component from other components. For example, without departing from the scope of the invention, a first component element may be named a second component element, and similarly, a second component element may be named a first component element.

[0050] In the following text, reference will be made to Figures 2 to 11 Exemplary embodiments of the present invention are described in detail below.

[0051] Figure 2 An illustration of a substrate processing apparatus according to an exemplary embodiment of the present invention is provided for illustrative purposes. (Refer to...) Figure 2 The substrate processing apparatus 10 processes the substrate W. The substrate processing apparatus 10 can use plasma to process the substrate W. For example, the substrate processing apparatus 10 can perform an etching process to remove a thin film on the substrate W using plasma, an ashing process to remove a photoresist film, a deposition process to form a thin film on the substrate W, or a drying and cleaning process.

[0052] Optionally, the substrate processing apparatus 10 may use hydrogen plasma to perform an annealing process on the substrate W. However, the invention is not limited to this, and the plasma processing process performed by the substrate processing apparatus 10 can be modified in various ways to known plasma processing processes. The substrate W on which a processing process has already been partially performed can be transported as a substrate W to be transported into the substrate processing apparatus 10. For example, the substrate W transported into the substrate processing apparatus 10 may be a substrate W on which an etching process or a photolithography process has been performed.

[0053] The substrate processing apparatus 10 may include a process chamber 100, a support unit 200, a microwave application unit 300, and a plasma supply unit 400.

[0054] The process chamber 100 may include a body 110 and a cover 120. The body 110 has an open upper surface and may have an internal space. For example, the body 110 may have an internal space and a cylindrical shape with an open upper surface. The cover 120 may be disposed on the upper end of the body 110. The cover 120 may seal the open upper surface of the body 110. For example, the cover 120 may be configured as a cylindrical shape with an open lower surface. The process chamber 100 may be defined by combining the body 110 and the cover 120 with each other. The cover 120 may have a stepped inner side at its lower end, such that the upper space has a larger radius than the lower space. The outer end of the transfer plate 310, which will be described below, may be disposed at the stepped portion on the inner side of the lower end of the cover 120.

[0055] The process chamber 100 has a processing space 101 therein. The processing space 101 is configured to be formed by combining the body 110, the cover 120 and the transfer plate 310, which will be described below, with each other. The processing space 101 provides space for processing the substrate W therein.

[0056] However, unlike the examples described above, according to an exemplary embodiment of the present invention, the cover 120 may not be provided in the process chamber 100. For example, the body 110 and the transfer plate 310 may be combined with each other to provide a processing space 101. The body 110 may have an open upper surface, and the transfer plate 310 may seal the open upper surface of the body 110. The outer end of the transfer plate 310 may be coupled to the outer upper end of the body 110 to define the processing space 101.

[0057] An opening (not shown) is formed in the sidewall of the process chamber 100, through which the substrate W is removed from or transported into the processing space 101. The opening (not shown) can be selectively concealed by a door (not shown). For example, the opening (not shown) can be formed in one sidewall of the body 110. The inner wall of the process chamber 100 can be coated. For example, the inner wall of the process chamber 100 can be coated with a material including quartz.

[0058] A discharge port 130 is formed in the bottom surface of the process chamber 100. For example, the discharge port 130 may be formed in the bottom surface of the body 110. The discharge port 130 may be connected to a discharge line 140. The discharge line 140 discharges particles and process byproducts flowing in the processing space 101. One end of the discharge line 140 is connected to the discharge port 130, and the other end of the discharge line 140 is connected to a pressure reducing unit (not shown) that provides negative pressure. The pressure reducing unit (not shown) may be a pump. However, the invention is not limited thereto, and the pressure reducing unit (not shown) may be configured in various ways to be a known device for providing negative pressure.

[0059] The support unit 200 can be positioned within the processing space 101. The support unit 200 can support the substrate W within the processing space 101. According to an exemplary embodiment, the support unit 200 can be an electrostatic chuck (ESC) capable of clamping the substrate W using electrostatic force. Optionally, the support unit 200 can physically support the substrate W by mechanical clamping. Optionally, the support unit 200 does not provide means for fixing the substrate W, and the substrate W can be arranged on the support unit 200.

[0060] The support unit 200 may include a body 210 and a heater 220. The body 210 supports a substrate W. The upper surface of the body 210 may be configured as a support surface for supporting the substrate W. The substrate W is located on the upper surface of the body 210. The body 210 may be provided with a dielectric material. The body 210 may be configured as a dielectric plate having a generally disc-shaped form. According to an exemplary embodiment, the diameter of the upper surface of the body 210 may be configured to be relatively larger than the diameter of the substrate W.

[0061] Heater 220 heats substrate W. Heater 220 can heat substrate W supported on the upper surface of body 210. Heater 220 heats substrate W by increasing the temperature of body 210. For example, heater 220 can be configured as a heating element that generates heat by resisting an applied current. Heater 230 can be a heating element such as tungsten. However, the type of heater 230 is not limited to this, and it can be configured to be modified in various ways to a known heating element.

[0062] The generated heat can be transferred to the substrate W through the body 210. The substrate W can be maintained at a predetermined temperature required by the process by the heat generated in the heater 220. In addition, the heater 220 can increase the temperature of the body 210, thereby preventing impurities (e.g., oxide film) separated from the substrate W during substrate W processing from re-adhering to the substrate W.

[0063] Although not shown, according to an exemplary embodiment, multiple heaters 220 can be configured as helical coils. These heaters 220 can be respectively disposed in different regions of the body 210. For example, heaters 220 for heating the central region of the body 210 and heaters 220 for heating the edge regions of the body 210 can be respectively disposed, and the heating level of each heater 220 can be independently adjusted.

[0064] Figure 3 To illustrate, according to Figure 2 A perspective view of the transmission board and the first waveguide of an exemplary embodiment. Figure 4 This is an illustrative representation of what it looks like when viewed from above. Figure 3 A diagram of the transmission board and the first waveguide. Referring to the following text... Figures 2 to 4 A microwave application unit according to an exemplary embodiment of the present invention is described in detail.

[0065] The microwave application unit 300 generates plasma in the processing space 101. The microwave application unit 300 can apply microwaves to the processing gas supplied to the processing space 101 to excite the processing gas in the processing space 101. The microwave application unit 300 may include a transmission plate 310, a waveguide 320, and a power supply 360.

[0066] A transfer plate 310 is disposed above the support unit 200. The transfer plate 310 can be combined with the body 110 and the cover 120 to define a processing space 101. The transfer plate 310 serves as the upper wall of the processing space 101. The transfer plate 310 can be configured in a plate shape. For example, the transfer plate 310 can be configured in a substantially dish shape. The outer lower end of the transfer plate 310 can be disposed in a stepped space of the cover 120. The upper and lower surfaces of the transfer plate 310 can be configured to be flat. However, the invention is not limited thereto; the upper surface of the transfer plate 310 is configured to be flat, the central region of the lower surface of the transfer plate 310 is configured to be flat, while the edge region of the lower surface of the transfer plate 310 can be formed to protrude downwards.

[0067] The transmission plate 310 is provided with a material capable of transmitting microwaves. The transmission plate 310 is also provided with a material that radiates microwaves into the processing space 101. For example, the transmission plate 310 may be provided with a quartz material. Optionally, the transmission plate 310 may be provided with a dielectric material, such as aluminum oxide (Al2O3), aluminum nitride (AlN), sapphire, or silicon nitride (SiN).

[0068] A gas passage 312 is formed in the transfer plate 310. The gas passage 312 can be configured as a recess extending from the upper end to the lower end of the transfer plate 310. The gas passage 312 can communicate with the gas line 440, which will be described below. Processing gas supplied from the gas supply unit 400, which will be described below, sequentially passes through the gas line 440 and the gas passage 312 to be supplied to the processing space 101.

[0069] Multiple gas channels 312 can be provided. These multiple gas channels 312 can be formed in a region including the center and edge areas of the transmission plate 310. The multiple gas channels 312 can be formed to be spaced apart from each other along the circumferential direction of the transmission plate 310. When viewed from above, the multiple gas channels 312 are formed at locations that do not overlap with the waveguide 320 described below.

[0070] Waveguide 320 is disposed above transmission plate 310. Waveguide 320 is positioned to contact transmission plate 310. For example, the lower surface of waveguide 320 may be in surface contact with the upper surface of transmission plate 310. Waveguide 320 may be made of a metallic material. For example, waveguide 320 may be made of a material including copper or aluminum. The inner surface of waveguide 320 is made of a conductor. For example, the inner surface of waveguide 320 may be made of gold or silver. Waveguide 320 may be configured as a tube shape with a polygonal cross-section. Waveguide 320 has a passage formed therein. Microwaves applied from power supply 360, which will be described below, can be transmitted to transmission plate 310 through the internal passage of waveguide 320.

[0071] Waveguide 320 may include a first waveguide 330. The first waveguide 330 may have a first portion 331, a second portion 332, and a third portion 333. The first portion 331, the second portion 332, and the third portion 333 may be integrally formed.

[0072] The first portion 331 can be configured in a ring shape. The first portion 331 can have a ring shape relative to the center of the transmission plate 310. When viewed from above, the first portion 331 can be positioned at the edge region facing the transmission plate 310. The first portion 331 has a cut part. The first portion 331 can be configured in a discontinuous ring shape.

[0073] A first slot 335 is formed on the bottom surface of the first portion 331. The first slot 335 can be configured as a through slit extending through the bottom surface of the first portion 331. Optionally, the first slot 335 can be filled with a material for transmitting microwaves. The first slot 335 can be formed in a longitudinal direction from one side of the first portion 331 toward the other side (from the other side toward the first side).

[0074] Multiple first slots 335 can be provided. The multiple first slots 335 can be arranged to be spaced apart from each other along the circumference of the first portion 331. When viewed from the front section of the first portion 331, the multiple first slots 335 can be arranged in multiple rows. Accordingly, the multiple first slots 335 can be arranged in multiple annular shapes within the first portion 331. Unlike what is shown in the figures, the multiple first slots 335 can be arranged at different angles relative to the center of the transmission plate 310.

[0075] The second portion 332 may extend from the first portion 331. For example, the second portion 332 may extend upward from the upper surface of the first portion 331. The second portion 332 may be attached to the upper surface of the first portion 331 at a location adjacent to the cut surface formed in the first portion 331.

[0076] The third portion 333 may extend from the second portion 332. For example, the third portion 333 may extend horizontally from the upper surface of the second portion 332. The third portion 333 may be connected to the first power supply 370, which will be described below.

[0077] Power supply 360 may include a first power supply 370 and a first matching network 372. The first power supply 370 generates a first microwave. For example, the first microwave generated by the first power supply 370 may have a frequency of approximately 2.3 GHz to 2.5 GHz. The first power supply 370 may be connected to a first waveguide 330. The first matching network 372 is disposed in a third portion 333. The first matching network 372 is disposed between the first power supply 370 and the second portion 332. The first matching network 372 can match the first microwave transmitted through the first power supply 370 with a predetermined frequency.

[0078] Figure 5A and Figure 5B This illustrates the role of microwaves in... Figure 3 A diagram illustrating the flow state in the first waveguide and transmission plate. (Refer to...) Figure 5A and Figure 5B The first microwave generated from the first power supply 370 can be transmitted to the first waveguide 330. The first microwave generated from the first power supply 370 can be transmitted to the first portion 331 via the first matching network 372, the third portion 333 of the first waveguide 330, and the second portion 332. The first microwave supplied to the first portion 331 can be transmitted along the loop-shaped first portion 331 to a cutout portion of the first portion 331. The first microwave transmits within the interior space of the first portion 331 and is transmitted to the transmission plate 310 through a first slot 335 formed on the lower surface of the first portion 331. The first microwave can be radiated from the transmission plate 310 to the processing space 101.

[0079] According to an exemplary embodiment of the present invention, the microwave application unit 300 may be configured to include a transmission plate 310 disposed above the processing space 101, a waveguide 320 disposed above the transmission plate 310, and a power supply 360 for transmitting microwaves to the waveguide 320. Accordingly, the waveguide 320 directly transmits microwaves applied from the power supply 360 to the transmission plate 310, thereby minimizing the structural complexity of the upper region of the processing space 101 in which the microwave application unit 300 is disposed. That is, an integrally formed microwave application unit 300 can be provided to transmit microwaves to the processing space 101 without the need for a separate antenna component. Furthermore, compared with reference to... Figure 1 Unlike the general substrate processing apparatus described, the first slot 335 and transmission plate 310 formed on the lower surface of waveguide 320 serve as an existing antenna plate with a thin thickness, thereby minimizing the heat generated in the antenna plate. Accordingly, thermal deformation of microwave application unit 300 due to heat generated during microwave transmission can be minimized. Consequently, microwaves can be uniformly transmitted to processing space 101, and plasma can be uniformly formed in processing space 101.

[0080] Return to reference Figure 2 The gas supply unit 400 supplies processing gas to the processing space 101. The gas supply unit 400 may include a gas supply source 420 and a gas line 440. The gas supply source 420 may store and / or supply processing gas. The processing gas may include hydrogen. The gas line 440 is connected to the gas supply source 420 and the gas passage 312. One end of the gas line 440 may be connected to the gas supply source 420, and the other end of the gas line may communicate with the gas passage 312. The processing gas supplied from the gas supply unit 420 can be supplied to the processing space 101 through the gas line 440 and the gas passage 312. For example, the processing gas may be supplied toward the upper part of the substrate W supported by the support unit 200.

[0081] In the above example, it has been described as an example that the other end of the gas line 440 communicates with the gas channel 312 formed in the transfer plate 310. However, the invention is not limited thereto, and the other end of the gas line 440 may branch. The other end of the branch of the gas line 440 may be connected to the gas channel 312 and a side wall of the process chamber 100, respectively. The other end of the gas channel 312 connected to a side wall of the process chamber 100 may supply process gas from the side surface of the process space 101 toward the process space 101. The other end of the gas channel 312 may be connected to multiple points along the circumferential direction of a side wall of the process chamber 100.

[0082] According to the above-described embodiment of the present invention, processing gas can be supplied towards the upper part of the processing space 101 along the gas channel 312 formed in the transfer plate 310. Accordingly, plasma applied to the substrate W can be effectively generated in the processing space 101, thereby improving the processing efficiency of the substrate W.

[0083] Figure 6 and Figure 7 To illustrate, this shows the effect when viewed from above. Figure 2 A diagram of the first waveguide of another exemplary embodiment. Except as otherwise described, the first waveguide according to the embodiment described below is configured to be structurally similar to the referenced... Figures 2 to 4 The structures of the first waveguides described are very similar. Therefore, the description of the repeated constructions will be omitted.

[0084] Reference Figure 6A first slot 335 is formed on the bottom surface of the first portion 331. The first slot 335 can be configured as a through slit passing through the upper and lower surfaces of the first portion 331. Optionally, the first slot 335 can be filled with a microwave transmitting material. The first slot 335 can be formed longitudinally from one side surface of the first portion 331 in a direction parallel to the other side surface facing that side surface. Multiple first slots 335 can be provided. The multiple first slots 335 can be arranged to be spaced apart from each other along the circumference of the first portion 331. Unlike what is shown in the figures, the multiple first slots 335 can be arranged at different angles relative to the center of the transmission plate 310.

[0085] Reference Figure 7 The longitudinal direction of the first slot 335 formed on the bottom surface of the first portion 331 can be formed along the circumferential direction of the first portion 331. For example, the first slot 335 can have a longitudinal direction parallel to one side surface of the first portion 331. Multiple first slots 335 can be provided. The multiple first slots 335 can be arranged to be spaced apart from each other along the circumferential direction of the first portion 331. When viewed from the front section of the first portion 331, the multiple first slots 335 can be arranged in multiple rows. Accordingly, the multiple first slots 335 can be arranged in multiple annular shapes in the first portion 331. Unlike what is shown in the figures, the multiple first slots 335 can be arranged at different angles relative to the center of the transmission plate 310.

[0086] Figure 8 An illustration of a substrate processing apparatus according to another exemplary embodiment of the present invention is shown for illustrative purposes. Figure 9 To illustrate, according to Figure 8 A perspective view of the transmission board and waveguide of an exemplary embodiment. Figure 10 This is an illustrative representation of what it looks like when viewed from above. Figure 9 A diagram of the transmission plate and waveguide. Refer to the following text. Figures 8 to 10 A substrate processing apparatus according to another exemplary embodiment of the present invention is described in detail.

[0087] Waveguide 320 may include a first waveguide 330, a second waveguide 340, and a third waveguide 350. The first waveguide 330 may have a first portion 331, a second portion 332, and a third portion 333. The first portion 331, the second portion 332, and the third portion 333 may be integrally formed.

[0088] The first portion 331 can be configured in a substantially ring shape. The first portion 331 can be configured in a cut-out ring shape. The first portion 331 can be configured in a semi-circular shape relative to the center of the transmission plate 310 at a location facing the edge region of the transmission plate 310. For example, the first portion 331 can be configured to surround a portion of the upper edge region of the transmission plate 310. The second portion 332 extends from the first portion 331, and the third portion 333 extends from the second portion 332. Since the second portion 332 and the third portion 333 are configured relative to a reference... Figures 2 to 4 The descriptions of Part 2 (332) and Part 3 (333) are very similar, so descriptions of Part 2 and Part 3 will be omitted.

[0089] The second waveguide 340 can be disposed in the region including the center of the transmission plate 310. For example, the second waveguide 340 can be disposed on the upper surface of the region including the center of the transmission plate 310. The second waveguide 340 can be disposed spaced apart from the first waveguide 330 and the third waveguide 350, which will be described below. The gas line 440 can be disposed in a space in which the first waveguide 330, the second waveguide 340, and the third waveguide 350 are spaced apart from each other. Accordingly, the gas channel 312 can be formed on the upper surface of the transmission plate 310 facing a position where the first waveguide 330, the second waveguide 340, and the third waveguide 350 are spaced apart from each other. Accordingly, when viewed from the top, the gas channel 312 can be formed at a position that does not overlap with the first waveguide 330, the second waveguide 340, and the third waveguide 350.

[0090] The lower surface of the second waveguide 340 can be in surface contact with the upper surface of the transmission plate 310. A second slot 345 is formed on the lower surface of the second waveguide 340. The second slot 345 can extend through the lower surface of the second waveguide 340. Optionally, the second slot 345 can be filled with a material for transmitting the second microwave, which will be described below. At least one or more second slots 345 can be provided. When viewed from above, the second slot 345 can be positioned at a location overlapping the center of the substrate W supported by the support unit 200.

[0091] The third waveguide 350 may have a first portion 351, a second portion 352, and a third portion 353. The first portion 351, second portion 352, and third portion 353 may be integrally formed. The first portion 351 may be configured in a substantially ring shape. The first portion 351 may be configured in a cut-out ring shape. The first portion 351 may be configured in a semi-circular shape relative to the center of the transmission plate 310 at a location facing the edge region of the transmission plate 310. For example, the first portion 351 may be configured to surround another portion of the upper edge region of the transmission plate 310.

[0092] The first portion 351 of the third waveguide 350 can be combined with the first portion 331 of the first waveguide 330 to form a ring shape above the transmission plate 310. One end of the first portion 351 of the third waveguide 350 can be spaced apart from one end of the first portion 331 of the first waveguide 330 by a predetermined distance so that they face each other. Furthermore, the other end of the first portion 351 of the third waveguide 350 can be spaced apart from the other end of the first portion 331 of the first waveguide 330 by a predetermined distance so that they face each other.

[0093] A third slot 355 is formed on the bottom surface of the first portion 351. The third slot 355 can be configured as a through slit extending through the bottom surface of the first portion 351. Optionally, the third slot 355 can be filled with a material for transmitting the third microwave, which will be described below. The longitudinal direction, arrangement, and / or shape of the third slot 355 can be configured to be very similar to the longitudinal direction, arrangement, and / or shape of the first slot 335. Therefore, a description of the longitudinal direction, arrangement, and / or shape of the third slot 355 will be omitted to avoid repetition.

[0094] The second portion 352 may extend from the first portion 351. For example, the second portion 352 may extend upward from the upper surface of the first portion 351. The second portion 352 may be positioned on a virtual straight line passing through the center of the transmission plate 310. For example, the second portion 332 of the first waveguide 330 may be positioned on a virtual straight line facing the second portion 352 of the third waveguide 350.

[0095] The third part 353 may extend from the second part 352. For example, the third part 353 may extend vertically from the upper surface of the second part 332. The third part 353 may be connected to the third power supply 390, which will be described below.

[0096] Power supply 360 may include a first power supply 370, a first matching network 372, a second power supply 380, a second matching network 382, ​​a third power supply 390, and a third matching network 392. The first power supply 370 and the first matching network 372 are configured similarly to a reference... Figures 2 to 4 The described structure.

[0097] A second power supply 380 generates a second microwave. The second power supply 380 can be connected to a second waveguide 340. For example, the second microwave generated by the second power supply 380 can have a frequency of approximately 0.8 GHz to 1.2 GHz. A second matching network 382 is disposed in the second waveguide 340. The second matching network 382 is disposed between the second power supply 380 and the second waveguide 340. The second matching network 382 can match the second microwave transmitted through the second power supply 380 to a predetermined frequency.

[0098] A third power supply 390 generates a third microwave. The third power supply 390 can be connected to a third waveguide 350. For example, the third microwave generated by the third power supply 390 can have a frequency of approximately 2.3 GHz to 2.5 GHz. A third matching network 392 is disposed in the third waveguide 350. The third matching network 392 is disposed between the third power supply 390 and the third waveguide 350. The third matching network 392 can match the third microwave transmitted through the third power supply 390 to a predetermined frequency.

[0099] The first microwave generated from the first power supply 370 may have a first intensity. The second microwave generated from the second power supply 380 may have a second intensity. Furthermore, the third microwave generated from the third power supply 390 may have a third intensity. The first intensity, the second intensity, and the third intensity may have different magnitudes. Optionally, the magnitudes of the first intensity and the third intensity may be comparable, and the magnitude of the second intensity may be smaller than the magnitudes of the first intensity and the third intensity.

[0100] According to the exemplary embodiment of the present invention described above, first waveguides 330 and third waveguides 350, which are distinct from each other, are disposed in the upper edge region of the transmission plate 310, and a second waveguide 340 is disposed in the region including the center of the transmission plate 310, thereby uniformly transmitting microwaves from each waveguide 320 to the processing space 101. Furthermore, independent microwave sources (e.g., first power supply 370, second power supply 380, and third power supply 390) are connected to the first waveguide 330, second waveguide 340, and third waveguide 350 to control the supply of different sizes of microwaves according to the size of the plasma formed for each region of the processing space 101, thereby compensating for the uniformity of the plasma in the processing space 101.

[0101] Figure 11 To illustrate, according to Figure 8 A diagram illustrating another exemplary embodiment of the transmission board and waveguide. (Refer to...) Figure 11 Waveguide 320 may include a first waveguide 330 and a second waveguide 340.

[0102] The first waveguide 330 may have a first portion 331, a second portion 332, and a third portion 333. The first portion 331, second portion 332, and third portion 333 may be integrally formed. The first portion 331 may be configured in a ring shape. The first portion 331 may have a ring shape relative to the center of the transmission plate 310. When viewed from above, the first portion 331 may be positioned at an edge region facing the transmission plate 310. The first portion 331 has a cutout. The first portion 331 may be configured in a discontinuous ring shape.

[0103] The second portion 332 may extend from the first portion 331. For example, the second portion 332 may extend upward from the upper surface of the first portion 331. The second portion 332 may be attached to the upper surface of the first portion 331 at a location adjacent to the cut surface formed in the first portion 331.

[0104] The third portion 333 may extend from the second portion 332. For example, the third portion 333 may extend horizontally from the upper surface of the second portion 332. The third portion 333 may be connected to the first power supply 370.

[0105] The second waveguide 340 can be disposed in the region including the center of the transmission plate 310. For example, the second waveguide 340 can be disposed on the upper surface of the region including the center of the transmission plate 310. The second waveguide 340 can be disposed spaced apart from the first waveguide 330. The gas line 440 can be disposed in a space in which the first waveguide 330 and the second waveguide 340 are spaced apart from each other. Accordingly, the gas channel 312 can be formed on the upper surface of the transmission plate 310 facing a position where the first waveguide 330 and the second waveguide 340 are spaced apart from each other. Accordingly, when viewed from the top, the gas channel 312 can be formed at a position that does not overlap with the first waveguide 330 and the second waveguide 340.

[0106] The foregoing detailed description illustrates the present invention. Furthermore, the foregoing has shown and described exemplary embodiments of the invention, and the invention can be used in various other combinations, modifications, and environments. That is, modifications or alterations can be made to the foregoing within the scope of the inventive concept disclosed herein, the scope equivalent to this disclosure, and / or the scope of technology or knowledge in the art. The foregoing exemplary embodiments describe the optimal state for carrying out the technical spirit of the invention, and various changes are possible in specific fields and uses of the invention. Accordingly, the foregoing detailed description of the invention is not intended to limit the invention to the disclosed exemplary embodiments. Furthermore, the appended claims should also be construed as including other exemplary embodiments.

Claims

1. An apparatus for processing a substrate, the apparatus comprising: A process chamber having processing space; A support unit configured to support the substrate in the processing space; A gas supply unit configured to supply processing gas to the processing space; as well as A microwave application unit configured to apply microwaves to the process gas to generate plasma. The microwave application unit includes: A transmission plate is disposed above the support unit and configured to radiate the microwaves into the processing space. A first waveguide is disposed above the transmission plate, the first waveguide is configured to surround a portion of the upper edge region of the transmission plate, and the first waveguide has a plurality of first slots formed on the lower surface of the first waveguide. A first power supply, configured to apply the microwaves to the first waveguide; A second waveguide is disposed above the transmission plate in a region including the center of the transmission plate; A second power supply, configured to apply the microwaves to the second waveguide. A third waveguide, configured to surround another portion of the upper edge region of the transmission plate, and combined with the first waveguide to form an annular shape, and the third waveguide having a plurality of third slots formed on the lower surface of the third waveguide; and A third power supply, configured to apply the microwaves to the third waveguide. At least one second slot is formed on the lower surface of the second waveguide.

2. The apparatus for processing a substrate according to claim 1, in, The first waveguide is arranged in an annular shape relative to the center of the transmission plate, and When viewed from above, the first waveguide is connected to the first power supply at a location spaced apart from the center of the transmission plate.

3. The apparatus for processing a substrate according to claim 2, in, The first waveguide is positioned facing the edge region of the transmission board, and the first waveguide has a cutout portion.

4. The apparatus for processing a substrate according to claim 3, in, The first power supply is coupled to a surface of the first waveguide adjacent to a cut surface of the first waveguide.

5. The apparatus for processing a substrate according to claim 4, in, The first slots are spaced apart from each other along the circumferential direction of the first waveguide.

6. The apparatus for processing a substrate according to claim 5, in, When the first waveguide is viewed from the front section, the first slots are arranged in multiple rows.

7. The apparatus for processing a substrate according to claim 1, in, The intensity of the microwave applied from the first power supply to the first waveguide is different from the intensity of the microwave applied from the second power supply to the second waveguide.

8. The apparatus for processing a substrate according to claim 1, in, The gas channel through which the processed gas flows is formed in the transfer plate, and When viewed from above, the gas channel is formed at a location that does not overlap with the first waveguide and the second waveguide.

9. The apparatus for processing a substrate according to claim 1, in, The first waveguide is made of a metallic material, and The transmission plate is provided with a material containing quartz.

10. An apparatus for processing a substrate, the apparatus comprising: A chamber having a processing space formed within the chamber; A support unit configured to support the substrate in the processing space; as well as A microwave application unit configured to apply microwaves to a process gas supplied to the processing space to generate plasma. The microwave application unit includes: A transmission plate is disposed above the support unit and configured to transmit a first microwave to the processing space; A first waveguide is disposed above the transmission plate, and the first microwave flows in the first waveguide, and the first waveguide is configured to surround a portion of the upper edge region of the transmission plate. A first power supply, configured to apply the first microwave to the first waveguide; A second waveguide is disposed above the transmission plate in a region including the center of the transmission plate; A second power supply, configured to apply a second microwave to the second waveguide; A third waveguide, configured to surround another portion of the upper edge region of the transmission plate, and combined with the first waveguide to form an annular shape, and the third waveguide having a plurality of third slots formed on the lower surface of the third waveguide; and A third power supply, configured to apply a third microwave to the third waveguide. The plurality of first slots through which the first microwave flow passes are formed on the lower surface of the first waveguide due to the transmission plate. The first slots are spaced apart from each other along the circumferential direction of the first waveguide; At least one second slot is formed on the lower surface of the second waveguide.

11. The apparatus for processing a substrate according to claim 10, in, The first slot is configured as multiple ring shapes.

12. The apparatus for processing a substrate according to claim 10, in, The first waveguide, the second waveguide, and the third waveguide are in surface contact with the upper surface of the transmission plate.

13. The apparatus for processing a substrate according to claim 10, in, The gas channel through which the processed gas flows is formed in the transfer plate, and When viewed from above, the gas channel is formed at a location that does not overlap with the first waveguide, the second waveguide, and the third waveguide.

14. An apparatus for processing a substrate, the apparatus comprising: A process chamber having a processing space formed within the process chamber; A support unit configured to support the substrate in the processing space; A gas supply unit configured to supply processing gas to the processing space; A transmission plate, which is disposed above the support unit; A first waveguide is disposed above the transmission plate, the first waveguide is configured to surround a portion of the upper edge region of the transmission plate, and the first waveguide has a plurality of first slots formed on the lower surface of the first waveguide. The second waveguide is disposed above the transmission plate in a region including the center of the transmission plate, and the second waveguide has at least one second slot formed on the lower surface of the second waveguide. A third waveguide is configured to surround another portion of the upper edge region of the transmission plate, and the third waveguide is combined with the first waveguide to form an annular shape, and the third waveguide has a plurality of third slots formed on the lower surface of the third waveguide. A first power supply, configured to apply a first microwave to the first waveguide; A second power supply, configured to apply a second microwave to the second waveguide; as well as A third power supply is configured to apply a third microwave to the third waveguide.

15. The apparatus for processing a substrate according to claim 14, in, The gas channel through which the processed gas flows is formed in the transfer plate, and When viewed from above, the gas channel is formed at a location that does not overlap with the first waveguide and the second waveguide.

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