Apparatus for processing a substrate

Abstract

An exemplary embodiment of the present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate includes a process chamber having a processing space therein, a support unit for supporting a substrate in the processing space, a gas supply unit for supplying a process gas to the processing space, and a microwave application unit for applying a microwave to the process gas to generate a plasma; wherein the microwave application unit can include a first power source for applying a first microwave, a support plate having a groove formed on an upper surface thereof, and the support plate is combined with the process chamber above the support unit to define the processing space, a first transmission plate inserted into the groove to radiate the first microwave to the processing space, and a first waveguide disposed to overlap an upper portion of the first transmission plate and coupled to the first power source, wherein a plurality of grooves can be provided, and the plurality of grooves can be formed in a circumferential direction in an edge region of the support plate when viewed from the top.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2021-0190313, filed with the Korean Intellectual Property Office on December 28, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present invention relates to an apparatus for processing a substrate, and more particularly to an apparatus for processing a substrate for plasma processing. Background Technology

[0004] Plasma refers to an ionized gaseous state composed of ions, radicals, and electrons. It is generated by extremely high temperatures, strong electric fields, or radio frequency (RF) electromagnetic fields. In semiconductor device manufacturing processes, plasma is used to perform various processes.

[0005] Figure 1 This diagram schematically illustrates a general substrate processing apparatus for processing substrates using microwaves. (Reference) Figure 1 The substrate W is supported in the processing space 1001 of the process chamber 1000, and plasma is generated by exciting the processing gas supplied to the processing space 1001 using microwaves, thereby processing the substrate W. An antenna plate 1100 with a slot 1102 is disposed in the upper region of the substrate W. A dielectric plate 1200 is disposed above the antenna plate 1100, and a transmission plate 1300 is disposed below the antenna plate 1100. When microwaves are applied to the antenna plate 1100, the microwaves are transmitted along the radial direction of the antenna plate 1100, and then transmitted to the processing space 1001 through the slot 1102 and the transmission plate 1300.

[0006] When using Figure 1When a substrate processing apparatus with the structure shown is used, the structural complexity of the components positioned above the processing space 1001 increases. There are numerous space constraints in the upper region of the processing space 1001. Furthermore, the antenna plate 1100 has a relatively thin thickness to smoothly transmit microwaves to the transmission plate 1300. Microwaves transmitted to the antenna plate 1100 generate current as they pass through the slot 1102. Due to this current generation, the antenna plate 1100 is heated, causing thermal deformation of the upper structure. The structural complexity of the upper space increases when a cooling structure is further installed to suppress heat generation. When heat generation is not suppressed, the relatively thin antenna plate 1100 may deform, preventing smooth microwave transmission to the processing space 1001. Moreover, the transmission plate 1300 is integrally formed with the antenna plate 1100 to be connected to a sidewall of the process chamber 1000. Maintenance costs increase when the transmission plate 1300 deforms due to heat transferred from the antenna plate 1100. In addition, in order to replace the integrally formed transmission plate 1300, the antenna plate 1100, dielectric plate 1200 and transmission plate 1300 of the substrate processing device need to be disassembled, so the replacement is not easy and the maintenance time is increased.

[0007] Furthermore, when microwaves are transmitted to the processing space 1001 via the antenna plate 1100, there is a problem that the microwaves are concentrated only in the central region of the processing space 1001. Therefore, the microwave density in the edge regions of the processing space is relatively weak compared to the central region of the processing space 1001. For this reason, it is not easy to perform plasma processing on the edge regions of the substrate. In addition, due to the structure of the antenna plate 1100, dielectric plate 1200 and transmission plate 1300, processing gas cannot be supplied from the top of the processing space 1001. Therefore, the processing gas cannot be supplied smoothly into the processing space 1001, thereby impairing the uniformity of the plasma formed in the processing space 1001. Summary of the Invention

[0008] The present invention aims to provide an apparatus for processing a substrate, which is capable of uniformly forming plasma in the processing space of the substrate to be processed.

[0009] The present invention also aims to provide an apparatus for processing substrates that minimizes the structural complexity of substrate processing apparatuses.

[0010] The present invention also aims to provide an apparatus for processing a substrate, which can minimize component deformation caused by heat generated during microwave transmission processes.

[0011] The present invention also aims to provide an apparatus for processing substrates, which can effectively replace the transmission plate.

[0012] The problems to be solved by the present invention are not limited to those described above, and those skilled in the art will clearly understand from this specification and the accompanying drawings any problems not mentioned.

[0013] An exemplary embodiment of the present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate includes: a process chamber having a processing space therein; a support unit for supporting the substrate in the processing space; a gas supply unit for supplying processing gas to the processing space; and a microwave application unit for applying microwaves to the processing gas to generate plasma. The microwave application unit may include: a first power source for applying first microwaves; a support plate having a groove formed on its upper surface, and the support plate being coupled to the process chamber above the support unit to define the processing space; a first transmission plate inserted into the groove to radiate the first microwaves into the processing space; and a first waveguide configured to overlap the upper portion of the first transmission plate and be coupled to the first power source. A plurality of grooves may be provided, and when viewed from above, the plurality of grooves may be formed circumferentially in the edge region of the support plate.

[0014] In an exemplary implementation, a plurality of first transmission plates may be provided, and when viewed from above, the plurality of first transmission plates may be combined with each other to have a ring shape.

[0015] In an exemplary embodiment, the first waveguide may be formed as a ring shape when viewed from above.

[0016] In an exemplary embodiment, a plurality of first slots may be formed on the lower surface of the first waveguide, and the plurality of first slots may be spaced apart from each other along the circumferential direction of the first waveguide.

[0017] In an exemplary embodiment, when the first waveguide is viewed from the front section, the plurality of first slots can be arranged in multiple rows.

[0018] In an exemplary implementation, a plurality of first slots may be configured to be open and closed.

[0019] In an exemplary embodiment, a central groove may also be formed on the upper surface of the support plate, the central groove being formed in a region including the center of the support plate, and the microwave application unit may further include: a second power supply for applying a second microwave; a second transmission plate inserted into the central groove to radiate the second microwave to the processing space; and a second waveguide disposed above the second transmission plate and connected to the second power supply, wherein at least one or more second slots are formed on the lower surface of the second waveguide.

[0020] In an exemplary embodiment, the groove may include: a first groove formed in a circumferential portion of the edge region of the support plate; and a second groove formed in the remaining circumferential portion of the edge region of the support plate; wherein the first groove and the second groove are combined with each other to form an annular shape.

[0021] In an exemplary embodiment, a first transmission plate may be inserted into a first recess, and the microwave application unit may include: a third power supply for applying a third microwave; a third transmission plate inserted into a second recess to radiate the third microwave into a processing space; and a third waveguide disposed above the third transmission plate and connected to the third power supply, wherein a plurality of third slots may be formed on the lower surface of the third waveguide, and the plurality of third slots may be spaced apart from each other along the circumferential direction of the third waveguide.

[0022] In an exemplary embodiment, the substrate processing apparatus may further include a gas supply unit for supplying processing gas to the processing space; wherein a gas channel may be formed in the support plate through which the processing gas flows.

[0023] In an exemplary embodiment, the support plate may be grounded.

[0024] In an exemplary embodiment, high-frequency power can be applied to the support plate.

[0025] Another exemplary embodiment of the present invention provides an apparatus for processing a substrate. The apparatus for processing a substrate includes: a chamber having a processing space defined therein; a support unit for supporting the substrate in the processing space; and a microwave application unit for applying microwaves to a processing gas supplied to the processing space to generate plasma, wherein the microwave application unit may include: a first power source for applying first microwaves; a support plate having a groove formed on its upper surface and the support plate being coupled to the chamber above the support unit to define the processing space; a first transmission plate inserted into the groove to radiate the first microwaves into the processing space; and a first waveguide configured to overlap the first transmission plate above it and be coupled to the first power source, wherein the first waveguide may be annular when viewed from above.

[0026] In an exemplary embodiment, a plurality of first slots may be formed on the lower surface of the first waveguide, and the plurality of first slots may be spaced apart from each other along the circumferential direction of the first waveguide.

[0027] In an exemplary embodiment, the plurality of first slots may be configured as a plurality of annular shapes.

[0028] In an exemplary embodiment, a plurality of grooves may be provided, and when viewed from above, the plurality of grooves may be formed in the edge region of the support plate in a circumferential direction, wherein a plurality of first transmission plates may be provided, and when viewed from above, the plurality of first transmission plates are joined together to have an annular shape.

[0029] In an exemplary embodiment, a central groove may also be formed on the upper surface of the support plate, the central groove being formed in a region including the center of the support plate. The microwave application unit may further include: a second power supply for applying a second microwave; a second transmission plate inserted into the central groove to radiate the second microwave into the processing space; and a second waveguide disposed above the second transmission plate and connected to the second power supply, wherein at least one or more second slots are formed on the lower surface of the second waveguide.

[0030] In an exemplary embodiment, the groove may include: a first groove formed in a circumferential portion of the edge region of the support plate, and the first groove into which a first transmission plate is inserted; and a second groove formed in the remaining circumferential portion of the edge region of the support plate; wherein the first groove and the second groove may be combined with each other to form an annular shape; and the microwave application unit may include: a third power supply for applying a third microwave; a third transmission plate inserted into the second groove to radiate the third microwave into the processing space; and a third waveguide disposed above the third transmission plate and connected to the third power supply, wherein a plurality of third slots may be formed on the lower surface of the third waveguide, and the plurality of third slots may be spaced apart from each other along the circumferential direction of the third waveguide.

[0031] Another exemplary embodiment of the present invention provides an apparatus for processing a substrate. The substrate processing apparatus includes: a process chamber having a processing space formed therein; a support unit for supporting a substrate in the processing space; a gas supply unit for supplying processing gas to the processing space; a first power source for applying a first microwave; a second power source for applying a second microwave; a support plate coupled to the process chamber above the support unit to define the processing space; a first transmission plate disposed above the support plate to radiate the first microwave into the processing space; and a second transmission plate disposed above the support plate to radiate the second microwave into the processing space; the first... A waveguide, the first waveguide being coupled to a first power source and disposed on the upper surface of a first transmission plate, and the first waveguide having a plurality of first slots formed on its lower surface; and a second waveguide, the second waveguide being coupled to a second power source and disposed on the upper surface of a second transmission plate, and the second waveguide having at least one or more second slots formed on its lower surface; wherein the upper surface of the support plate may have: a central groove formed in a region including the center of the support plate; and a groove formed in a region facing the edge of the support plate, the groove surrounding the central groove, wherein the first transmission plate can be inserted into the groove, and the second transmission plate can be inserted into the central groove.

[0032] In an exemplary embodiment, a plurality of grooves may be provided, and when viewed from above, the plurality of grooves may be formed along the circumferential direction of the support plate, wherein a plurality of first transmission plates may be provided, and when viewed from above, the plurality of first transmission plates are joined together to have an annular shape, and when viewed from above, the first waveguide may be formed in an annular shape.

[0033] According to an exemplary embodiment of the present invention, plasma can be uniformly formed in the processing space of the substrate to be processed.

[0034] Furthermore, according to an exemplary embodiment of the present invention, the structural complexity of the substrate processing apparatus can be minimized.

[0035] Furthermore, according to an exemplary embodiment of the present invention, component deformation caused by heat generated during the microwave transmission process can be minimized.

[0036] According to an exemplary embodiment of the present invention, the transmission board can be replaced effectively.

[0037] The effects of the present invention are not limited to those described above, and those skilled in the art will clearly understand from this specification and the accompanying drawings the effects not mentioned. Attached Figure Description

[0038] Figure 1 A view of a typical substrate processing apparatus is shown schematically.

[0039] Figure 2 A diagram illustrating a substrate processing apparatus according to an exemplary embodiment of the present invention is shown for illustrative purposes.

[0040] Figure 3 According to Figure 2 An exploded perspective view of a microwave application unit in an exemplary embodiment.

[0041] Figure 4 To illustrate the view from the top Figure 2 The diagram shows the support plate and the first waveguide.

[0042] Figure 5A and Figure 5B To illustrate microwaves in Figure 2 A diagram showing the flow state in the first transmission plate and the first waveguide.

[0043] Figure 6 and Figure 7 To illustrate schematically, according to the view from the top Figure 2 A diagram of the first waveguide of another exemplary embodiment.

[0044] Figure 8 A diagram illustrating a substrate processing apparatus according to another exemplary embodiment of the present invention is shown for illustrative purposes.

[0045] Figure 9 To illustrate the basis Figure 8 A perspective view of the support plate, first waveguide, second waveguide, and third waveguide of an exemplary embodiment.

[0046] Figure 10 To illustrate the view from the top Figure 9 A diagram of the support plate, the first waveguide, the second waveguide, and the third waveguide.

[0047] Figure 11 To illustrate the basis Figure 8 A diagram of a support plate, a first waveguide, and a second waveguide in another exemplary embodiment. Detailed Implementation

[0048] In the following description, exemplary embodiments of the invention will be described in more detail with reference to the accompanying drawings. Various modifications to the exemplary embodiments of the invention are possible, and the scope of the invention should not be construed as limited to the exemplary embodiments described below. Exemplary embodiments are provided to provide a more complete description of the invention to those skilled in the art. Therefore, the shapes, etc., of components in the drawings are exaggerated for clearer illustration.

[0049] Terms such as "first" and "second" are used to describe various constituent elements, but these constituent elements are not limited by these terms. These terms are only used to distinguish one component from other components. For example, without departing from the scope of the invention, a first constituent element may be named a second constituent element, and similarly, a second constituent element may be named a first constituent element.

[0050] In the following text, reference will be made to the appendix. Figures 2 to 11 Exemplary embodiments of the present invention will be described in more detail below.

[0051] Figure 2 A diagram illustrating a substrate processing apparatus according to an exemplary embodiment of the present invention is shown for illustrative purposes. (Reference) Figure 2 The substrate processing apparatus 10 processes the substrate W. The substrate processing apparatus 10 can apply plasma to process the substrate W. For example, the substrate processing apparatus 10 can perform an etching process for removing a thin film on the substrate W using plasma, an ashing process for removing a photoresist film, a deposition process for forming a thin film on the substrate W, or a dry cleaning process.

[0052] Optionally, the substrate processing apparatus 10 may use hydrogen plasma to perform an annealing process on the substrate W. However, this disclosure is not limited to this, and the plasma processing process performed by the substrate processing apparatus 10 can be modified in various ways to various known plasma processing processes. A substrate W on which a processing process has already been partially performed may be loaded into the substrate processing apparatus 10. For example, the substrate W loaded into the substrate processing apparatus 10 may be a substrate W on which etching processes, photolithography processes, etc., have been performed.

[0053] The substrate processing apparatus 10 may include a process chamber 100, a support unit 200, a microwave application unit 300, and a gas supply unit 400.

[0054] The process chamber 100 may include a body 110 and a cover 120. The body 110 has an open upper surface and may have an internal space. For example, the body 110 may have an internal space and a cylindrical shape with an open upper surface. The cover 120 may be disposed at the upper end of the body 110. The cover 120 may seal the open upper surface of the body 110. For example, the cover 120 may be configured as a cylindrical shape with an open lower surface. The process chamber 100 may be defined by combining the body 110 and the cover 120 with each other. The cover 120 may have a stepped inner side at its lower end, such that the upper space has a larger radius than the lower space. The outer end of the support plate 310 (described below) may be disposed at the stepped portion on the inner side of the lower end of the cover 120.

[0055] The process chamber 100 has a processing space 101 therein. The processing space 101 is configured as a space formed by the body 110, cover 120 and support plate 310, which will be described below, joining together. The processing space 101 provides space for processing a substrate W therein.

[0056] However, unlike the embodiments described above, according to an exemplary embodiment of the present invention, the cover 120 may not be provided in the process chamber 100. For example, the body 110 and the support plate 310 may be coupled together to provide a processing space 101. The body 110 may have an open upper surface, and the support plate 310 may seal the open upper surface of the body 110. The outer end of the support plate 310 may be coupled to the outer upper end of the body 110 to define the processing space 101.

[0057] An opening (not shown) is formed in the sidewall of the process chamber 100 through which the substrate W is loaded into or removed from the processing space 101. The opening (not shown) may be selectively concealed by a door (not shown). For example, an opening (not shown) may be formed in one sidewall of the body 110. The inner wall of the process chamber 100 may be coated. For example, the inner wall of the process chamber 100 may be coated with a material including quartz.

[0058] A discharge port 130 is formed on the bottom surface of the process chamber 100. For example, the discharge port 130 may be formed in the bottom surface of the body 110. The discharge port 130 may be connected to a discharge line 140. The discharge line 140 discharges particles, process byproducts, etc., flowing in the processing space 101. One end of the discharge line 140 is connected to the discharge port 130, and the other end of the discharge line 140 is connected to a pressure reducing unit (not shown) that provides negative pressure. The pressure reducing unit (not shown) may be a pump. However, the invention is not limited thereto, and the pressure reducing unit (not shown) may be configured with various modifications as a known device for providing negative pressure.

[0059] The support unit 200 can be positioned within the processing space 101. The support unit 200 can support the substrate W within the processing space 101. According to an exemplary embodiment, the support unit 200 can be an ESC (electrostatic chuck) capable of holding the substrate W using electrostatic force. Optionally, the support unit 200 can physically support the substrate W by mechanical clamping. Optionally, the support unit 200 does not provide means for fixing the substrate W, and the substrate W can be disposed on the support unit 200.

[0060] The support unit 200 may include a body 210 and a heater 220. The body 210 supports the substrate W. The upper surface of the body 210 may be configured as a support surface for supporting the substrate W. The substrate W is disposed on the upper surface of the body 210. The body 210 may be provided with a dielectric material. The body 210 may be configured as a dielectric plate having a substantially disc shape. According to an exemplary embodiment, the diameter of the upper surface of the body 210 may be configured to be relatively larger than the diameter of the substrate W.

[0061] Heater 220 heats substrate W. Heater 220 can heat substrate W supported on the upper surface of body 210. Heater 220 can heat substrate W by increasing the temperature of body 210. For example, heater 220 can be configured as a heating element that generates heat by resisting an applied current. Heater 230 can be a heating element such as tungsten. However, the type of heater 230 is not limited to this, and it can be configured with various modifications to known heating elements.

[0062] The generated heat can be transferred to the substrate W through the body 210. The substrate W can be maintained at a predetermined temperature required for the process by the heat generated in the heater 220. In addition, the heater 220 can increase the temperature of the body 210, thereby preventing impurities (e.g., oxide film) separated from the substrate W from re-adhering to the substrate W during the processing of the substrate W.

[0063] Although not shown, according to an exemplary embodiment, multiple heaters 220 may be configured as helical coils. These heaters 220 may be respectively disposed in different regions of the body 210. For example, heaters 220 for heating the central region of the body 210 and heaters 220 for heating the edge regions of the body 210 may be respectively disposed, and these heaters 220 may independently adjust their degree of heat generation.

[0064] Figure 3 According to Figure 2 An exploded perspective view of a microwave application unit in an exemplary embodiment. Figure 4 To illustrate the view from the top Figure 2 A diagram of the support plate and the first waveguide. Referring below... Figures 2 to 4 A microwave application unit according to an exemplary embodiment of the present invention will be described in more detail.

[0065] The microwave application unit 300 generates plasma in the processing space 101. The microwave application unit 300 can apply microwaves to the processing gas supplied to the processing space 101 to excite the processing gas in the processing space 101. The microwave application unit 300 may include a support plate 310, a first transmission plate 330, a first waveguide 340, a first power supply 350, and a first matching network 360.

[0066] A support plate 310 is disposed above the support unit 200. The support plate 310 can be combined with the body 110 and the cover 120 to define a processing space 101. The support plate 310 serves as the upper wall of the processing space 101. The support plate 310 can be configured in a disc shape. For example, the support plate 310 can be configured in a disc shape having a substantially thick thickness. The outer lower end of the support plate 310 can be disposed in a stepped space of the cover 120. The lower surface of the support plate 310 can be configured to be flat. However, the invention is not limited thereto, and the edge region of the lower surface of the support plate 310 can be formed to protrude downwards.

[0067] A groove H is formed in the support plate 310. The groove H can be formed as a recess at a predetermined distance from the upper surface of the support plate 310. When viewed from the top, the groove H can be formed in the edge region of the support plate 310. Multiple grooves H can be formed. Multiple grooves H can be formed in the edge region of the support plate 310 and spaced apart from each other in the circumferential direction of the support plate 310. The height of the groove H can correspond to the height of the first transmission plate 330 (described below). In addition, the width of the groove H can correspond to the width of the first transmission plate 330. For example, when viewed from the top, the groove H and the first transmission plate 330 can have the same shape as each other. Therefore, the first transmission plate 330 can be inserted into the multiple grooves H formed in the support plate 310.

[0068] The support plate 310 may be made of a metallic material. The support plate 310 may be grounded. Optionally, although not shown, high-frequency power may be applied to the support plate 310. The region 320 of the support plate 310 corresponding to the lower part of the groove H formed in the support plate 310 may not be made of a metallic material. For example, the region 320 corresponding to the lower part of the groove H of the support plate 310 may be made of a material capable of transmitting microwaves (e.g., quartz).

[0069] A gas passage 312 is formed in the support plate 310. The gas passage 312 may be configured as a groove extending from the upper end to the lower end of the support plate 310. The gas passage 312 may communicate with a gas line 440 (described below). Processing gas supplied from the gas supply unit 400 (described below) is supplied to the processing space 101 by passing sequentially through the gas line 440 and the gas passage 312.

[0070] Multiple gas channels 312 can be provided. The multiple gas channels 312 can be formed in a region including the center and edge regions of the support plate 310. The multiple gas channels 312 can be formed to be spaced apart from each other along the circumferential direction of the support plate 310. The multiple gas channels 312 are formed at positions that do not overlap with the first waveguide 330 (described below) when viewed from above.

[0071] The first transmission plate 330 transmits the first microwave received from the first waveguide 340 (described below) to the processing space 101. Viewed from above, the first transmission plate 330 may be positioned at a location corresponding to the edge region of the support plate 310. The first transmission plate 330 is inserted into a groove H. Viewed from above, the first transmission plate 330 may have a shape corresponding to the groove H. Furthermore, the height of the first transmission plate 330 may correspond to the height of the groove H. Multiple first transmission plates 330 may be provided. For example, the number of first transmission plates 330 may correspond to the number of grooves H formed in the support plate 310. Multiple first transmission plates 330 may be inserted into multiple grooves H respectively. Viewed from above, the multiple first transmission plates 330 may be combined with each other to have an annular shape.

[0072] The first transmission plate 330 is provided with a material capable of transmitting microwaves. The first transmission plate 330 is also provided with a material that radiates microwaves into the processing space 101. For example, the first transmission plate 330 may be provided with a material including quartz. Optionally, the first transmission plate 330 may be provided with a dielectric material, such as aluminum oxide (Al2O3), aluminum nitride (AlN), sapphire, or silicon nitride (SiN).

[0073] A first waveguide 340 is disposed above the first transmission plate 330. The first waveguide 340 is positioned to contact the first transmission plate 330. For example, the lower surface of the first waveguide 340 may be in surface contact with the upper surface of the first transmission plate 330. When viewed from above, the first waveguide 340 may be configured to overlap with the first transmission plate 330. When viewed from above, the first waveguide 340 may be formed in a ring shape. For example, when viewed from above, the first waveguide 340 may have a ring shape with cut-out portions.

[0074] The first waveguide 340 may be made of a metallic material. For example, the first waveguide 340 may be made of a material including copper or aluminum. The inner surface of the first waveguide 340 is made of a conductor. For example, the inner surface of the first waveguide 340 may be made of gold or silver. The first waveguide 340 may be configured as a tubular shape with a polygonal cross-section. The first waveguide 340 has channels formed therein. The first microwave applied from the first power source 350 (described below) can be transmitted to the first transmission plate 330 through the internal channels of the first waveguide 340.

[0075] The first waveguide 340 may have a first portion 341, a second portion 342, and a third portion 343. The first portion 341, second portion 342, and third portion 343 may be integrally formed. The first portion 341 may be annular in shape. The first portion 341 may have an annular shape relative to the center of the support plate 310. When viewed from above, the first portion 341 may be located at an edge region facing the support plate 310. The first portion 341 has cut-out portions. The first portion 341 may be an intermittent annular shape.

[0076] A first slot 345 is formed on the bottom surface of the first portion 341. The first slot 345 may be configured as a through slot that passes through the bottom surface of the first portion 341. Optionally, the first slot 345 may be filled with a material that transmits the first microwave. The longitudinal direction of the first slot 345 may be formed in a direction from one side surface of the first portion 341 toward another side surface facing that side surface.

[0077] Multiple first slots 345 can be provided. The multiple first slots 345 can be spaced apart from each other along the circumferential direction of the first portion 341. When viewed from a front cross-section of the first portion 341, the multiple first slots 345 can be arranged in multiple rows. Therefore, the multiple first slots 345 can be arranged in multiple annular shapes in the first portion 341. Contrary to what is shown in the figures, the multiple first slots 345 can also be arranged at different angles relative to the center of the support plate 310.

[0078] The first slot 345 can be configured to open and close. For example, a component (not shown) can slide in the first slot 345 to open and close the first slot 345. Multiple first slots 345 can be opened and closed individually. Thus, multiple first slots 345 are opened and closed individually to control the intensity of the microwave to be transmitted for processing each region of space 101.

[0079] The second part 342 may extend from the first part 341. For example, the second part 342 may extend upward from the upper surface of the first part 341. The second part 342 may be connected to the upper surface of the first part 341 at a position adjacent to the cutting surface formed in the first part 341.

[0080] The third part 343 may extend from the second part 342. For example, the third part 343 may extend horizontally from the upper surface of the second part 342. The third part 343 may be connected to the first power supply 350 (described below).

[0081] A first power supply 350 generates a first microwave. The first power supply 350 may be connected to a first waveguide 340. For example, the first microwave generated by the first power supply 350 may have a frequency of approximately 2.3 GHz to 2.5 GHz. A first matching network 360 may be disposed between the first power supply 350 and the first waveguide 340. The first matching network 360 may match the first microwave transmitted through the first power supply 350 with a predetermined frequency.

[0082] Figure 5A and Figure 5B To illustrate the role of microwaves in Figure 2 A diagram showing the flow state in the first transmission plate and the first waveguide. (Reference) Figure 5A and Figure 5B The first microwave generated from the first power supply 350 can be transmitted to the first waveguide 340. The first microwave generated from the first power supply 350 can be transmitted to the first part 341 through the first matching network 360, the third part 343 and the second part 342 of the first waveguide 340. The first microwave transmitted to the first part 341 can be transmitted along the annular first part 341 to the cut portion of the first part 341. The first microwave transmits in the internal space of the first part 341 and is transmitted to the first transmission plate 330 in contact with the surface of the first transmission plate 330 by passing through the first slot 345 formed on the lower surface of the first part 341. The first microwave can be radiated from the first transmission plate 330 to be transmitted to the processing space 101.

[0083] According to an exemplary embodiment of the present invention, the microwave application unit 300 may be configured to include a support plate 310 disposed above the processing space 101, a first transmission plate 330 inserted into a groove H formed in the support plate 310, and a first waveguide 340 configured to contact the surface of the first transmission plate 330. Therefore, the first waveguide 340 directly transmits microwaves to the first transmission plate 330, thereby minimizing the structural complexity of the upper region of the processing space 101 in which the microwave application unit 300 is disposed. In other words, since the first waveguide 340 according to the exemplary embodiment of the present invention functions as an antenna, no separate antenna component is installed, thereby eliminating structural complexity.

[0084] Furthermore, by employing a structure in which the first transmission plate 330, which receives the first microwave from the first waveguide 340, is inserted into the groove H formed in the support plate 310, maintenance can be easily performed when the first transmission plate 330 deforms due to heat generation, etc. Additionally, when viewed from above, the first transmission plate 330 and the first waveguide 340 are positioned at the edge region facing the processing space 101, thereby mitigating the phenomenon of microwave concentration in the central region of the processing space 101. Therefore, since microwaves can be uniformly transmitted to the processing space 101, plasma can be uniformly formed within the processing space 101.

[0085] Return to reference Figure 2 The gas supply unit 400 supplies processing gas to the processing space 101. The gas supply unit 400 may include a gas supply source 420 and a gas line 440. The gas supply source 420 may store and / or supply processing gas. The processing gas may include hydrogen. The gas line 440 is connected to the gas supply source 420 and the gas passage 312. One end of the gas line 440 may be connected to the gas supply source 420, and the other end of the gas line 440 may communicate with the gas passage 312. The processing gas supplied from the gas supply source 420 can be supplied to the processing space 101 through the gas line 440 and the gas passage 312. For example, the processing gas may be supplied towards the upper part of the substrate W supported by the support unit 200.

[0086] In the above embodiments, it has been described that the other end of the gas line 440 communicates with the gas passage 312 formed in the support plate 310. However, the invention is not limited thereto, and the other end of the gas line 440 may branch. The other end of the branch of the gas line 440 may be connected to the gas passage 312 and a side wall of the process chamber 100, respectively. The other end of the gas passage 312, connected to a side wall of the process chamber 100, may supply process gas from the side surface of the process space 101 toward the process space 101. The other end of the gas passage 312 may be connected to multiple points along the circumferential direction of a side wall of the process chamber 100.

[0087] According to the exemplary embodiment of the present invention described above, the processing gas can be supplied towards the upper part of the processing space 101 along the gas channel 312 formed in the support plate 310. Therefore, plasma applied to the substrate W can be effectively generated in the processing space 101, and the processing efficiency of the substrate W can be improved.

[0088] Figure 6 and Figure 7 To illustrate schematically, according to the view from the top Figure 2 A diagram of the first waveguide of another exemplary embodiment.

[0089] Except as otherwise described, the first waveguide according to the exemplary embodiment described below is in conjunction with reference to... Figures 2 to 4 The structure of the first waveguide described is basically similar to that provided. Therefore, descriptions of repeated configurations will be omitted.

[0090] refer to Figure 6A first slot 345 is formed on the bottom surface of the first part 341. The first slot 345 can be configured as a through slot passing through the upper and lower surfaces of the first part 341. Optionally, the first slot 345 can be filled with a microwave transmitting material. The longitudinal direction of the first slot 345 can be formed in a direction parallel to another side surface facing one side surface of the first part 341. Multiple first slots 345 can be provided. The multiple first slots 345 can be configured to be spaced apart from each other in the circumferential direction of the first part 341. Unlike what is shown in the figures, the multiple first slots 345 can be arranged at different angles relative to the center of the support plate 310.

[0091] refer to Figure 7 The longitudinal direction of the first slot 345 formed on the bottom surface of the first part 341 can be formed along the circumferential direction of the first part 341. For example, the first slot 345 can have a longitudinal direction parallel to one side surface of the first part 341. Multiple first slots 345 can be provided. The multiple first slots 345 can be spaced apart from each other along the circumferential direction of the first part 341. When viewed from a front cross-section of the first part 341, the multiple first slots 345 can be arranged in multiple rows. Therefore, the multiple first slots 345 can be arranged in multiple annular shapes in the first part 341. Unlike what is shown in the figures, the multiple first slots 345 can be arranged at different angles relative to the center of the support plate 310.

[0092] Figure 8 A diagram of a substrate processing apparatus according to another exemplary embodiment of the present invention is shown for illustrative purposes. Figure 9 To illustrate the basis Figure 8 A perspective view of the support plate, first waveguide, second waveguide, and third waveguide of an exemplary embodiment. Figure 10 To illustrate the view from the top Figure 9 A diagram of the support plate, first waveguide, second waveguide, and third waveguide is shown below. (See attached diagram.) Figures 8 to 10 A substrate processing apparatus according to another exemplary embodiment of the present invention will be described in more detail.

[0093] The microwave application unit 300 includes a support plate 310, a first transmission plate 330, a first waveguide 340, a first power supply 350, a second transmission plate 530, a second waveguide 540, a second power supply 550, a third transmission plate 630, a third waveguide 640, and a third power supply 650.

[0094] A groove H and a central groove CH can be formed in the support plate 310. The groove H can be formed as a recess at a predetermined distance from the upper surface of the support plate 310. When viewed from the top, the groove H can be formed in the edge region of the support plate 310. Multiple grooves H can be formed. Multiple grooves H can be formed in the edge region of the support plate 310, spaced apart from each other in the circumferential direction of the support plate 310.

[0095] The groove H may have a first groove 4120 and a second groove 4130. The first groove H1 may be formed in the circumferential portion of the edge region of the support plate 310. For example, the first groove H1 may be formed on one side of a virtual straight line passing through the center of the support plate 310. The first transmission plate 330 may be inserted into the first groove H1. When viewed from above, the first groove H1 may have a shape corresponding to the first transmission plate 330. In addition, the height of the first groove H1 may correspond to the height of the first transmission plate 330.

[0096] The second groove H2 can be formed in other portions of the edge region of the support plate 310 in the circumferential direction. For example, the second groove H2 can be formed on the other side of a virtual straight line passing through the center of the support plate 310. When viewed from above, the first groove H1 and the second groove H2 can be formed in regions symmetrical to each other on the support plate 310. The third transmission plate 630 (described below) can be inserted into the second groove H2. When viewed from above, the second groove H2 can have a shape corresponding to the third transmission plate 630. In addition, the height of the second groove H2 can correspond to the height of the third transmission plate 630. The first groove H1 and the second groove H2 can be combined with each other to have a substantially annular shape when viewed from above.

[0097] A central groove CH can be formed in the region including the center of the support plate 310. The central groove CH can be formed to be spaced apart from the first groove H1 and the second groove H2. The second transmission plate 530 (described below) can be inserted into the central groove CH. When viewed from the top, the central groove CH can have a shape corresponding to the second transmission plate 530. In addition, the height of the central groove CH can correspond to the height of the second transmission plate 530.

[0098] A region of the support plate 310 corresponding to the lower surface of each of the first groove H1, the second groove H2, and the central groove CH may be provided with a material capable of transmitting microwaves. For example, each of the regions 320 corresponding to the lower part of the first groove H1, the lower part of the second groove H2, and the lower part of the central groove CH of the support plate 310 may be provided with a material capable of transmitting microwaves (e.g., quartz).

[0099] The first waveguide 340 may have a first part 341, a second part 342, and a third part 343. The first part 341, the second part 342, and the third part 343 may be formed integrally.

[0100] The first part 341 can be configured in a substantially annular shape. The first part 341 can be configured in a tangential ring shape. The first part 341 can be configured in a semi-circular position relative to the center of the support plate 310, facing the edge region of the support plate 310. For example, the first part 341 can be configured as a portion surrounding the upper edge region of the support plate 310, on which a first transmission plate 330 inserted into the first groove H1 is provided. The second part 342 extends from the first part 341, and the third part 343 extends from the second part 342. Since the second part 342 and the third part 343 are relative to the reference... Figures 2 to 4 The descriptions of Part 2 (342) and Part 3 (343) are basically similar, so the descriptions of Part 2 and Part 3 will be omitted.

[0101] The second transmission plate 530 transmits the second microwave received from the second waveguide 540 (described below) to the processing space 101. When viewed from above, the second transmission plate 530 may be positioned at a location corresponding to the region including the center of the support plate 310. For example, when viewed from above, the second transmission plate 530 may be positioned at a location overlapping the center of the substrate W supported by the support unit 200. The second transmission plate 530 is inserted into the central recess CH.

[0102] The second transmission plate 530 is provided with a material capable of transmitting microwaves. The second transmission plate 530 is also provided with a material that radiates microwaves into the processing space 101. For example, the second transmission plate 530 may be provided with a material including quartz to radiate microwaves into the central region of the processing space 101. Optionally, the second transmission plate 530 may be provided with a dielectric material, such as aluminum oxide (Al2O3), aluminum nitride (AlN), sapphire, or silicon nitride (SiN).

[0103] The second waveguide 540 is disposed above the second transmission plate 530. The second waveguide 540 is positioned to contact the upper surface of the second transmission plate 530. For example, the lower surface of the second waveguide 540 may be in surface contact with the upper surface of the second transmission plate 530. When viewed from above, the second waveguide 540 may be configured to overlap with the second transmission plate 530. When viewed from above, the second waveguide 540 may overlap with the center of the substrate W positioned in the support unit 200.

[0104] The second waveguide 540 can be configured to be spaced apart from the first waveguide 340 and the third waveguide 640 (described below). A gas line 440 can be disposed in the space between the first waveguide 340, the second waveguide 540, and the third waveguide 640. Therefore, a gas passage 312 can be formed on the upper surface of the support plate 310, which faces the first waveguide 340, the second waveguide 540, and the third waveguide 640 at a position spaced apart from each other. Thus, when viewed from above, the gas passage 312 can be formed at a position that does not overlap with the first waveguide 340, the second waveguide 540, and the third waveguide 640 to supply processing gas to the upper part of the processing space 101.

[0105] A second slot 545 is formed on the lower surface of the second waveguide 540. The second slot 545 may extend through the lower surface of the second waveguide 540. Optionally, the second slot 545 may be filled with a material for transmitting second microwaves (described below). At least one or more second slots 545 may be provided. When viewed from above, the second slot 545 may be positioned at a location overlapping the center of the substrate W supported by the support unit 200. According to an exemplary embodiment, the second slot 545 may be configured to open and close similarly to the first slot 345.

[0106] A second power supply 550 generates a second microwave. For example, the second microwave generated by the second power supply 550 may have a frequency of approximately 0.8 GHz to 1.2 GHz. A second matching network 560 is disposed in the second waveguide 540. The second matching network 560 is disposed between the second power supply 550 and the second waveguide 540. The second matching network 560 can match the second microwave transmitted through the second power supply 550 with a predetermined frequency.

[0107] The third transmission plate 630 is inserted into the second groove H2. The third transmission plate 630 is structurally similar to the first transmission plate 330. Therefore, its detailed description will be omitted to avoid repetition.

[0108] The third waveguide 640 may have a first portion 641, a second portion 642, and a third portion 643. The first portion 641, second portion 642, and third portion 643 may be integrally formed. The first portion 641 may be configured in a substantially annular shape. The first portion 641 may be configured in a tangential ring shape. The first portion 641 may be positioned semi-circularly relative to the center of the support plate 310, facing the edge region of the support plate 310. For example, the first portion 641 may be configured to surround another portion of the upper edge region of the support plate 310, on which a third transmission plate 630 inserted into the second groove H2 is provided. When viewed from above, the first portion 641 of the third waveguide 640 and the first portion 341 of the first waveguide 340 may be combined with each other to form an annular shape. One end of the first portion 641 of the third waveguide 640 may be spaced apart from one end of the first portion 341 of the first waveguide 340 by a predetermined distance so that they face each other. In addition, the other end of the first part 641 of the third waveguide 640 can be spaced apart from the other end of the first part 341 of the first waveguide 340 so that they face each other.

[0109] A third slot 645 is formed on the bottom surface of the first part 641. The third slot 645 may be configured as a through slot extending through the bottom surface of the first part 641. Optionally, the third slot 645 may be filled with a material for transmitting a third microwave (described below). The longitudinal direction, arrangement, and / or shape of the third slot 645 may be configured to be substantially similar to the longitudinal direction, arrangement, and / or shape of the first slot 345. Therefore, a description of the longitudinal direction, arrangement, and / or shape of the third slot 645 will be omitted to avoid repetition.

[0110] The second part 642 may extend from the first part 641. For example, the second part 642 may extend upward from the upper surface of the first part 641. The second part 642 may be positioned on a virtual straight line passing through the center of the support plate 310. For example, the second part 342 of the first waveguide 340 may be positioned on a virtual straight line facing the second part 642 of the third waveguide 640.

[0111] The third part 643 may extend from the second part 642. For example, the third part 643 may extend vertically from the upper surface of the second part 642. The third part 643 may be connected to the first power supply 650 (described below).

[0112] A third power supply 650 generates a third microwave. The third power supply 650 can be connected to a third waveguide 640. For example, the third microwave generated by the third power supply 650 can have a frequency of approximately 2.3 GHz to 2.5 GHz. A third matching network 660 is disposed in the third waveguide 640. The third matching network 660 is disposed between the third power supply 650 and the third waveguide 640. The third matching network 660 can match the third microwave transmitted through the third power supply 650 to a predetermined frequency.

[0113] The first microwave generated from the first power source 350 may have a first intensity. The second microwave generated from the second power source 550 may have a second intensity. Additionally, the third microwave generated from the third power source 650 may have a third intensity. The first, second, and third intensities may have different magnitudes. Optionally, the first and third intensities may have corresponding magnitudes, and the second intensity may have a smaller magnitude than both the first and third intensities.

[0114] According to the exemplary embodiment of the present invention described above, the first transmission plate 330, the second transmission plate 530, and the third transmission plate 630 are respectively inserted into the first groove H1 and the second groove H2 formed in the upper edge region of the support plate 310, and the central groove CH formed in the region including the center of the support plate 310. Furthermore, a first waveguide 340 for transmitting the first microwave is provided in the first transmission plate 330, a second waveguide 540 for transmitting the second microwave is provided in the second transmission plate 530, and a third waveguide 640 for transmitting the third microwave is provided in the third transmission plate 630. Therefore, the intensity of the microwaves transmitted to the processing space 101 from each of the first waveguide 340, the second waveguide 540, and the third waveguide 640 can be varied. The intensity of the microwaves can be individually controlled according to the process of the processing substrate W. Therefore, the uniformity of the plasma in the processing space 101 can be compensated by controlling the supply of microwaves of different magnitudes according to the size of the plasma formed for each region of the processing space 101.

[0115] Figure 11 To illustrate the basis Figure 8 A perspective view of the support plate, first waveguide, and second waveguide of another exemplary embodiment. (Refer to...) Figure 11 The microwave application unit 300 may include a support plate 310, a first transmission plate 330, a first waveguide 340, a first power supply 350, a second transmission plate 530, a second waveguide 540, and a second power supply 550.

[0116] A groove H is formed in the support plate 310. The groove H can be formed as a recess at a predetermined distance from the upper surface of the support plate 310. When viewed from the top, the groove H can be formed in the edge region of the support plate 310. Multiple grooves H can be formed. Multiple grooves H can be formed in the edge region of the support plate 310 to be spaced apart from each other in the circumferential direction of the support plate 310. The height of the groove H can correspond to the height of the first transmission plate 330 (described below). In addition, the width of the groove H can correspond to the width of the first transmission plate 330 (described below). For example, when viewed from the top, the groove H and the first transmission plate 330 can have the same shape as each other. Therefore, the first transmission plate 330 can be inserted into the multiple grooves H formed in the support plate 310.

[0117] A first waveguide 340 is disposed above the first transmission plate 330. The first waveguide 340 is positioned to contact the first transmission plate 330. For example, the lower surface of the first waveguide 340 may be in surface contact with the upper surface of the first transmission plate 330. When viewed from above, the first waveguide 340 may be configured to overlap with the first transmission plate 330. When viewed from above, the first waveguide 340 may be formed in a ring shape. For example, when viewed from above, the first waveguide 340 may have a ring shape with cut-out portions.

[0118] The first power supply 350, the second transmission board 530, the second waveguide 540, and the second power supply 550 are configured to be consistent with the reference. Figure 9 and Figure 10 The first power supply 350, the second transmission board 530, the second waveguide 540, and the second power supply 550 are basically similar, therefore, their descriptions will be omitted.

[0119] The foregoing detailed description illustrates the present invention. Furthermore, the foregoing has shown and described exemplary embodiments of the invention, and the invention can be used in various other combinations, modifications, and environments. That is, modifications or alterations can be made to the foregoing within the scope of the inventive concept disclosed herein, the scope equivalent to the inventive concept disclosed herein, and / or within the scope of the technology or knowledge in the art. The foregoing exemplary embodiments describe the optimal state for carrying out the technical spirit of the invention, and various changes are possible in the specific fields and uses of the invention. Therefore, the foregoing detailed description of the invention is not intended to limit the invention to the disclosed exemplary embodiments. Furthermore, the appended claims should also be interpreted to include other exemplary embodiments.

Claims

1. A substrate processing apparatus for processing a substrate, the substrate processing apparatus comprising: A process chamber having a processing space therein; A support unit configured to support the substrate in the processing space; A gas supply unit configured to supply processing gas to the processing space; as well as A microwave application unit configured to apply microwaves to the processing gas to generate plasma. The microwave application unit includes: A first power source, configured to apply a first microwave; A support plate having a groove formed on its upper surface, and the support plate being combined with the process chamber above the support unit to define the processing space, the support plate being formed of a conductive material containing metal, wherein the region of the support plate corresponding to the lower part of the groove is formed of a material capable of transmitting the first microwave. A first transmission plate, inserted into the groove to radiate the first microwave into the processing space; and A first waveguide is configured to overlap with the upper part of the first transmission board and be connected to the first power supply. It has multiple grooves, and When viewed from above, the plurality of grooves are formed in the edge region of the support plate in the circumferential direction; The support plate has multiple gas channels formed in a region including the center and edge areas of the support plate, and the processing gas flows through the multiple gas channels.

2. The substrate processing apparatus according to claim 1, wherein, Multiple first transmission boards are set up, and When viewed from above, the plurality of first transmission plates are joined together to form a ring shape.

3. The substrate processing apparatus according to claim 2, wherein, When viewed from above, the first waveguide is formed in a ring shape.

4. The substrate processing apparatus according to claim 3, wherein, Multiple first slots are formed on the lower surface of the first waveguide. The plurality of first slots are spaced apart from each other along the circumferential direction of the first waveguide.

5. The substrate processing apparatus according to claim 4, wherein, When the first waveguide is viewed from the front section, the plurality of first slots are arranged in multiple rows.

6. The substrate processing apparatus according to claim 5, wherein, The plurality of first slots are configured to open and close.

7. The substrate processing apparatus according to claim 4, wherein, A central groove is also formed on the upper surface of the support plate, the central groove being formed in a region including the center of the support plate. The microwave application unit further includes: A second power source, configured to apply a second microwave; A second transmission plate, inserted into the central recess to radiate the second microwave into the processing space; and The second waveguide is disposed above the second transmission board and connected to the second power supply. At least one second slot is formed on the lower surface of the second waveguide.

8. The substrate processing apparatus according to claim 7, wherein, The plurality of grooves includes: A first groove is formed in the circumferential portion of the edge region of the support plate; and A second groove is formed in the other portion of the edge region of the support plate in the circumferential direction; The first groove and the second groove are joined together to form an annular shape.

9. The substrate processing apparatus according to claim 8, wherein, The first transmission plate is inserted into the first groove. The microwave application unit further includes: A third power source, the third power source being configured to apply a third microwave; A third transmission plate, inserted into the second groove, is used to radiate the third microwave into the processing space; and The third waveguide is disposed above the third transmission board and connected to the third power supply. Among them, multiple third slots are formed on the lower surface of the third waveguide, and The plurality of third slots are spaced apart from each other along the circumferential direction of the third waveguide.

10. The substrate processing apparatus according to claim 1, wherein The support plate is grounded.

11. The substrate processing apparatus according to claim 1, wherein, High-frequency power is applied to the support plate.

12. A substrate processing apparatus for processing a substrate, the substrate processing apparatus comprising: A chamber having a processing space defined therein; A support unit configured to support the substrate in the processing space; as well as A gas supply unit configured to supply processing gas to the processing space; as well as A microwave application unit configured to apply microwaves to the processing gas supplied to the processing space to generate plasma. The microwave application unit includes: A first power source, configured to apply a first microwave; A support plate having a groove formed on its upper surface, and the support plate being coupled to the chamber above the support unit to define the processing space, the support plate being formed of a conductive material containing metal; A first transmission plate, inserted into the groove to radiate the first microwave into the processing space; and A first waveguide is configured to overlap with the first transmission board above it and be connected to the first power supply. Specifically, when viewed from above, the first waveguide is configured in a ring shape, and The area of ​​the support plate corresponding to the lower part of the groove is formed of a material capable of transmitting the first microwave. The support plate has multiple gas channels formed in a region including the center and edge areas of the support plate, and the processing gas flows through the multiple gas channels.

13. The substrate processing apparatus according to claim 12, wherein, Multiple first slots are formed on the lower surface of the first waveguide. The plurality of first slots are spaced apart from each other along the circumferential direction of the first waveguide.

14. The substrate processing apparatus according to claim 13, wherein, The plurality of first slots are configured in a plurality of annular shapes.

15. The substrate processing apparatus according to claim 14, wherein, It has multiple grooves, and When viewed from above, the plurality of grooves are formed circumferentially in the edge region of the support plate. This includes multiple first transmission boards, and When viewed from above, the plurality of first transmission plates are joined together to form a ring shape.

16. The substrate processing apparatus according to claim 15, wherein, A central groove is also formed on the upper surface of the support plate, the central groove being formed in a region including the center of the support plate. The microwave application unit further includes: A second power source, configured to apply a second microwave; A second transmission plate, inserted into the central recess to radiate the second microwave into the processing space; and The second waveguide is disposed above the second transmission board and connected to the second power supply. At least one second slot is formed on the lower surface of the second waveguide.

17. The substrate processing apparatus according to claim 16, wherein, The groove includes: A first groove, formed in the circumferential portion of the edge region of the support plate and into which the first transmission plate is inserted; and The support plate has a second groove formed on its upper surface, the second groove being formed in other portions of the edge region of the support plate in the circumferential direction; The first groove and the second groove are joined together to form a ring shape. The microwave application unit further includes: A third power source, the third power source being configured to apply a third microwave; A third transmission plate, inserted into the second groove, is used to radiate the third microwave into the processing space; and The third waveguide is disposed above the third transmission board and connected to the third power supply. Among them, multiple third slots are formed on the lower surface of the third waveguide, and The plurality of third slots are spaced apart from each other along the circumferential direction of the third waveguide.

18. A substrate processing apparatus for processing a substrate, the substrate processing apparatus comprising: A process chamber having a processing space formed therein; A support unit configured to support the substrate in the processing space; A gas supply unit configured to supply processing gas to the processing space; A first power source, configured to apply a first microwave; A second power source, configured to apply a second microwave; A support plate, which is combined with the process chamber above the support unit to define the processing space, the support plate being formed of a conductive material containing metal; A first transmission plate is disposed above the support plate to radiate a first microwave into the processing space; as well as A second transmission plate is disposed above the support plate to radiate a second microwave into the processing space. A first waveguide is connected to the first power supply and disposed on the upper surface of the first transmission board, and the first waveguide has a plurality of first slots formed on its lower surface. as well as The second waveguide is connected to the second power supply and disposed on the upper surface of the second transmission board, and the second waveguide has at least one second slot formed on its lower surface. The upper surface of the support plate has: A central recess, the central recess being formed in a region including the center of the support plate; and A groove, formed in the region facing the edge of the support plate, the groove surrounding the central groove, The first transmission plate is inserted into the groove, and The second transmission plate is inserted into the central groove, and The area of ​​the support plate corresponding to the lower part of the groove is formed of a material capable of transmitting the first microwave, and the area of ​​the support plate corresponding to the lower part of the central groove is formed of a material capable of transmitting the second microwave. The support plate has multiple gas channels formed in a region including the center and edge areas of the support plate, and the processing gas flows through the multiple gas channels.

19. The substrate processing apparatus according to claim 18, wherein... It has multiple grooves, and When viewed from above, the plurality of grooves are formed along the circumferential direction of the support plate. in, Multiple first transmission boards are set up, and When viewed from above, the plurality of first transmission plates are joined together to form a ring shape. When viewed from above, the first waveguide is formed in a ring shape.

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