Substrate processing apparatus, harmonic control unit, and harmonic control method

Abstract

A substrate processing apparatus is disclosed. The substrate processing apparatus includes a chamber having an internal space, a support unit which supports a substrate in the internal space, a ring-shaped unit which is arranged on an edge region of the support unit when viewed from above, a power supply unit which generates RF power for forming an electric field in the internal space, and a harmonic control unit which is connected to the ring-shaped unit to control harmonics generated by the RF power.

Description

Technical Field

[0001] Embodiments of the inventive concept described herein relate to a substrate processing apparatus, a harmonic control unit, and a harmonic control method. Background Technology

[0002] To fabricate semiconductor devices, substrates undergo various processes such as photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning to form desired patterns on the substrate. Etching is a process of removing selected heated areas from the thin film formed on the substrate, and it can be performed using wet etching or dry etching. Plasma etching apparatus is used for dry etching. Plasma refers to an ionized gaseous state composed of ions, electrons, or free radicals. Plasma is generated by very high temperatures or strong radio frequency (RF) electromagnetic fields. In a high-frequency electromagnetic field, an RF generator applies an RF voltage to one of the electrodes facing each other. The RF power applied by the RF generator excites the process gas supplied to the chamber to generate plasma. As the height of semiconductor stacks, such as 3D NAND flash memory, increases year by year, etching of highly stacked structures increases plasma processing time. Processing time can be reduced by increasing the RF power applied by the RF generator to naturally increase plasma density.

[0003] On the other hand, harmonics may be generated within the chamber due to the nonlinear impedance of the chamber structure, external circuitry, plasma, and plasma sheath. Harmonics can be waves with frequencies that are integer multiples of the dominant frequency of the RF voltage applied by the RF generator. For example... Figure 1 As shown, the generated harmonics can propagate along the surface of a substrate, such as a wafer, from the edge of the substrate to the center in the form of surface waves. In this case, the wavelength of the surface wave is expressed as follows.

[0004]

[0005] Where λ is the wavelength of the surface wave, λ0 is the wavelength in vacuum, d is the plasma thickness, S is the thickness of the plasma sheath, and L is the electrode diameter.

[0006] According to some literature, under the condition λ≤L, the propagating harmonic components may overlap, thus generating standing waves.

[0007] As mentioned above, when the frequency of the voltage generated by the RF generator is high, the frequency of the harmonic components may also be high. With higher harmonic frequencies, the wavelength λ0 in the vacuum decreases, satisfying the standing wave generation condition. The effect of converting the intensity of the standing wave into plasma density is called the standing wave effect (SWE). Through this effect, the plasma density increases where the standing wave intensity is high and decreases where the standing wave intensity is low. SWE may reduce the uniformity of plasma density. In other words, the uniformity of substrate processing using plasma may decrease due to the harmonics generated in the chamber. As mentioned above, recently, the intensity of the RF power can be increased to increase the plasma density. As the intensity of the RF power increases, the intensity of the harmonic components also increases, and therefore the uniformity of the substrate processing may further decrease.

[0008] To suppress these harmonics, a scheme could be considered to alter the resonant frequency region of the chamber (where harmonics are amplified) by connecting an external circuit to an electrostatic chuck that applies RF power to the RF generator. The principle in this case is to prevent the intensity of the generated harmonic components from being further amplified and affecting the plasma density. However, in this case, the transmission characteristics of the RF power applied to the electrostatic chuck might be affected. Furthermore, the plasma process is performed in dozens of steps, and the resonant frequency of the aforementioned chamber may vary depending on the plasma generated in each step. In other words, since the conditions for harmonic amplification may differ in each step, it is necessary to control the aforementioned external circuit to change the resonant frequency region of the chamber in each step.

[0009] Furthermore, depending on the conditions, two or more harmonic components in the electric field (rather than a single harmonic component) may affect the plasma density. In other words, since controlling only one harmonic component is insufficient to improve plasma homogeneity, it is necessary to control two or more harmonic components. Summary of the Invention

[0010] Embodiments of the present invention provide a substrate processing apparatus, a harmonic control unit, and a harmonic control method, which can effectively process substrates.

[0011] Furthermore, embodiments of the present invention provide a substrate processing apparatus, a harmonic control unit, and a harmonic control method that can improve the uniformity of substrate processing using plasma.

[0012] Furthermore, embodiments of the present invention provide a substrate processing apparatus, a harmonic control unit, and a harmonic control method, which can effectively control the harmonic components in the electric field generated in the internal space of the cavity.

[0013] Furthermore, embodiments of the present invention provide a substrate processing apparatus, a harmonic control unit, and a harmonic control method, which are capable of eliminating harmonic components in the electric field generated in the internal space of a cavity.

[0014] The objectives of this invention may not be limited to those described above, and those skilled in the art will clearly understand other objectives from the disclosure provided below in conjunction with the accompanying drawings.

[0015] According to one embodiment, a substrate processing apparatus includes: a chamber having an internal space; a support unit that supports a substrate in the internal space; an annular unit disposed on an edge region of the support unit when viewed from above; a power supply unit that generates RF power for forming an electric field in the internal space; and a harmonic control unit connected to the annular unit to control harmonics generated by the RF power.

[0016] According to one embodiment, the annular unit may include: an edge ring arranged to overlap with an edge region of a substrate supported by a support unit when viewed from above; and a coupling ring arranged below the edge ring, wherein a harmonic control unit may be connected to the coupling ring.

[0017] According to one embodiment, the coupling ring may include a ring electrode and a ring body formed of an insulating material and surrounding at least a portion of the ring electrode, wherein the harmonic control unit may be electrically connected to the ring electrode.

[0018] According to one embodiment, the harmonic control unit may include: a blocking unit that blocks the frequency components of RF power from flowing to a ground terminal; and an elimination unit disposed between the blocking unit and the ground terminal to eliminate harmonics.

[0019] According to one embodiment, the elimination unit may include: a first blocking filter for blocking frequency components other than the p-th harmonic frequency component; and a first harmonic control circuit disposed between the first blocking filter and a ground terminal.

[0020] According to one embodiment, the elimination unit may include: a second blocking filter that blocks frequency components other than the frequency component of the qth harmonic, which is different from the p-th harmonic; and a second harmonic control circuit disposed between the second blocking filter and a ground terminal.

[0021] According to one embodiment, the first harmonic control circuit may include a first inductor and a first capacitor, and the second harmonic control circuit may include a second inductor and a second capacitor.

[0022] According to one embodiment, the substrate processing apparatus may further include a controller for controlling the harmonic control unit, wherein the first capacitor and the second capacitor are variable capacitors, and the controller can adjust the capacitance of the first capacitor and the second capacitor such that the first harmonic control circuit constitutes a resonant circuit having a frequency of p-th harmonic and the second harmonic control circuit constitutes a resonant circuit having a frequency of q-th harmonic.

[0023] According to one embodiment, the substrate processing apparatus may further include a detection unit that detects voltage or current flowing toward or to the harmonic control unit.

[0024] According to one embodiment, the controller can adjust the capacitance of at least one of the first capacitor and the second capacitor based on the voltage or current measured by the detection unit.

[0025] According to one embodiment, the power supply unit may include: a first power supply that applies a first voltage having a first frequency to an electrode forming an electric field; a second power supply that applies a second voltage having a second frequency lower than the first frequency to the electrode; and a third power supply that applies a third voltage having a third frequency lower than the first and second frequencies to the electrode.

[0026] According to one embodiment, the blocking unit may include: a first blocking filter that blocks a first frequency component of a first voltage; a second blocking filter that blocks a second frequency component of a second voltage; and a third blocking filter that blocks a third frequency component of a third voltage.

[0027] According to another embodiment, a harmonic control unit controls harmonics generated in a substrate processing apparatus and is connected to a conductive component, wherein the substrate processing apparatus includes electrodes forming an electric field and conductive components mounted at locations different from the electrodes. The harmonic control unit includes: a blocking unit that blocks the flow of frequency components of RF power forming the electric field to a ground terminal in the frequency components flowing into the harmonic control unit; and an elimination unit disposed between the blocking unit and the ground terminal to eliminate harmonics.

[0028] According to one embodiment, the elimination unit may include a first harmonic elimination unit and a second harmonic elimination unit that eliminates frequency components that are different from the frequency components of the first harmonic elimination unit.

[0029] According to one embodiment, the first harmonic cancellation unit may include: a first blocking filter that blocks frequency components other than the p-th harmonic frequency component; and a first harmonic control circuit disposed between the first blocking filter and a ground terminal. The second harmonic cancellation unit may include: a second blocking filter that blocks frequency components other than the q-th harmonic frequency component that is different from the p-th harmonic; and a second harmonic control circuit disposed between the second blocking filter and a ground terminal.

[0030] According to one embodiment, the first harmonic control circuit and the second harmonic control circuit may each include a first capacitor and a second capacitor, wherein the first capacitor and the second capacitor are variable capacitors, and the capacitance of the first capacitor and the second capacitor can be adjusted such that the first harmonic control circuit constitutes a resonant circuit with a frequency of p-th harmonic and the second harmonic control circuit constitutes a resonant circuit with a frequency of q-th harmonic.

[0031] According to another embodiment, a method for controlling harmonics generated in a cavity using plasma to process a substrate includes: blocking the flow of frequency components of RF power applied to electrodes forming an electric field in the cavity to a ground terminal via a blocking unit of a harmonic control unit, wherein the harmonic control unit is connected to a ring unit disposed on an edge region of a support unit of a support substrate; and eliminating harmonics passing through the blocking unit via an elimination unit of the harmonic control unit, wherein eliminating harmonics may include: blocking frequency components other than the frequency components of the harmonics; and eliminating harmonics via a harmonic control circuit having a variable capacitor.

[0032] According to one embodiment, the method may further include adjusting the capacitance of a variable capacitor such that the harmonic control circuit constitutes a resonant circuit with harmonic frequencies.

[0033] According to one embodiment, harmonic elimination may include: blocking frequency components other than the frequency component of the p-th harmonic by means of a first blocking filter; and eliminating the p-th harmonic by means of a first harmonic control circuit that constitutes a resonant circuit having the frequency of the p-th harmonic.

[0034] According to one embodiment, eliminating harmonics by the elimination unit may include: blocking frequency components other than the frequency component of the qth harmonic, which is different from the p-th harmonic, by using a second blocking filter; and eliminating the q-th harmonic by using a second harmonic control circuit that is different from the first harmonic control circuit and constitutes a resonant circuit with the frequency of the q-th harmonic. Attached Figure Description

[0035] Referring to the following figures, the above and other objects and features will become apparent from the following description, wherein, unless otherwise stated, the same reference numerals refer to the same parts throughout the figures, and wherein:

[0036] Figure 1 This is a schematic diagram illustrating the propagation of surface waves generated by harmonics;

[0037] Figure 2 This is a diagram of a substrate processing apparatus according to an embodiment of the present invention;

[0038] Figure 3 It is a diagram. Figure 2A schematic diagram of the harmonic control unit;

[0039] Figure 4 It is a diagram. Figure 3 A schematic diagram of the first harmonic cancellation unit;

[0040] Figure 5 This indicates the maximum current flowing in. Figure 4 A diagram illustrating the frequency conditions of the first harmonic control circuit;

[0041] Figure 6 This is a schematic diagram illustrating the appearance of the harmonic control unit and detection unit of a substrate processing apparatus according to another embodiment of the present invention;

[0042] Figure 7 The diagram is drawn by Figure 6 The curve of the current change of the harmonic components detected by the detection unit;

[0043] Figure 8 This is a schematic diagram illustrating the appearance of the harmonic control unit and detection unit of a substrate processing apparatus according to another embodiment of the present invention;

[0044] Figure 9 It is a diagram. Figure 3 A schematic diagram of another example of the first harmonic cancellation unit; and

[0045] Figure 10 This is a diagram illustrating the appearance of a substrate processing apparatus according to another embodiment of the present invention. Detailed Implementation

[0046] The advantages and features of embodiments of the present invention and their implementation methods will become apparent from the accompanying drawings and the following detailed description. However, it should be understood that the present invention is not limited to the following embodiments and can be implemented in different ways; these embodiments are given to provide a full disclosure of the present invention and to provide a thorough understanding of the present invention by those skilled in the art, and the scope of the present invention is defined only by the appended claims and their equivalents.

[0047] Although not defined, all terms used herein (including technical or scientific terms) have the same meaning as commonly accepted in the ordinary art to which the inventive concept belongs. Terms defined in general dictionaries may be interpreted as having the same meaning as those used in related technologies and / or in the text of this application, and even if some terms are not explicitly defined, they should not be interpreted as conceptual or overly formal.

[0048] The terminology used in this specification is provided for the purpose of describing embodiments and not for limiting it. In this specification, the singular forms are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “including” as used herein specify the presence of the stated features, numbers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, numbers, steps, operations, elements, components, and / or groups thereof. In this disclosure, the terms “and / or” mean each listed component or various combinations thereof.

[0049] The terms "first," "second," etc., may be used to describe different elements, but these elements should not be limited by the terms. These terms may be used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the inventive concept, a first component may be referred to as a second component. Similarly, a second component may also be referred to as a first component.

[0050] The singular form is intended to include the plural form unless the context clearly indicates otherwise. Furthermore, the shapes and dimensions of the components shown in the accompanying drawings may have been exaggerated for clarity.

[0051] The terms "unit" or "module" as used in this specification refer to a software or hardware component that performs a function, such as an FPGA or ASIC. However, the terms "unit" or "module" are not limited to software or hardware. A "unit" or "module" may be configured to be included in an addressable storage medium and function as one or more processors.

[0052] For example, the terms "unit" or "module" include components such as software components, object-oriented software components, class components and task components, processes, functions, attributes, procedures, subroutines, program code segments, drivers, firmware, microcode, circuits, data, databases, data structures, tables, arrays, and variables. The functionality provided in a component and "unit" or "module" may be undertaken by a small number of components and "units" or "modules," or may be divided into additional components and "units" or "modules."

[0053] In the following text, reference will be made to Figures 2 to 10 An embodiment of the present invention is described.

[0054] Figure 2 This is a schematic diagram illustrating a substrate processing apparatus according to an embodiment of the present invention.

[0055] Reference Figure 2The substrate processing apparatus 10 uses plasma to process the substrate W. For example, the substrate processing apparatus 10 can perform an etching process on the substrate W. The substrate processing apparatus 10 may include a chamber 100, a support unit 200 (an example of a lower electrode unit), a gas supply unit 300, an upper electrode unit 400, a temperature control unit 500, a power supply unit 600, a ring unit 700, a harmonic control unit 800, and a controller 900.

[0056] The chamber 100 may have an internal space 101. The substrate W can be processed within the internal space 101. Within the internal space 101, the substrate W can be processed with plasma. The substrate W can be etched with plasma. Plasma can be delivered to the substrate W to etch layers formed on the substrate W.

[0057] The inner wall of chamber 100 may be coated with a material having excellent plasma resistance. Chamber 100 may be grounded. An inlet (not shown) may be formed in chamber 100 through which the substrate W can be transported in or out. This inlet may be selectively opened and closed by a door (not shown). During substrate W processing, the internal space 101 may be closed by the inlet. Additionally, during substrate W processing, the internal space 101 may have a vacuum pressure atmosphere.

[0058] An exhaust port 102 may be formed at the bottom of chamber 100. Atmosphere in the internal space 101 can be discharged through the exhaust port 102. The exhaust port 102 may be connected to an exhaust line VL to reduce the pressure 101 in the internal space. Process gases, plasma, and process byproducts supplied to the internal space 101 can be discharged to the outside of the substrate processing apparatus 10 through the exhaust port 102 and the exhaust line VL. Furthermore, the pressure in the internal space 101 can be regulated by the pressure reduction provided by the exhaust line VL. For example, the pressure in the internal space 101 can be regulated by the pressure reduction provided by the gas supply unit 300 and the exhaust line VL, as will be described later. When reducing the pressure in the internal space 101, the pressure reduction provided by the exhaust line VL can be increased, or the supply amount of process gas supplied by the gas supply unit 300 per unit time can be decreased. Conversely, when further increasing the pressure in the internal space 101, the pressure reduction provided by the exhaust line VL can be decreased, or the supply amount of process gas supplied by the gas supply unit 300 per unit time can be increased.

[0059] The support unit 200 can support the substrate W. The support unit 200 can support the substrate W in the internal space 101. The support unit 200 can have one of the opposing electrodes that form an electric field in the internal space 101. Alternatively, the support unit 200 can be an electrostatic chuck (ESC) that can use electrostatic force to adsorb and fix the substrate W.

[0060] The support unit 200 may include a dielectric plate 210, an electrostatic electrode 220, a heater 230, a lower electrode 240, and an insulating plate 250.

[0061] The dielectric plate 210 may be disposed on the upper part of the support unit 200. The dielectric plate 210 may be formed of an insulating material. For example, the dielectric plate 210 may be made of a material including ceramic or quartz. The dielectric plate 210 may have a seat surface supporting the substrate W. When viewed from above, the area of ​​the seat surface may be smaller than the area of ​​the lower surface of the substrate W. The lower surface of the edge region of the substrate W placed on the dielectric plate 210 may face the upper surface of the edge ring 710, which will be described later.

[0062] A first supply channel 211 is formed in the dielectric plate 210. The first supply channel 211 can extend from the upper surface to the lower surface of the dielectric plate 210. A plurality of first supply channels 211 can be formed spaced apart from each other and can be configured as channels for supplying heat transfer medium to the lower surface of the substrate W. For example, the first supply channel 211 can be in fluid communication with a first circulation channel 241 and a second supply channel 243, which will be described later.

[0063] Furthermore, a separate electrode (not shown) for adsorbing the substrate W onto the dielectric plate 210 can be embedded in the dielectric plate 210. A direct current can be applied to the electrode. The applied current can cause an electrostatic force to act between the electrode and the substrate, and the substrate W can be adsorbed onto the dielectric plate 210 by the electrostatic force.

[0064] The electrostatic electrode 220 can attract the substrate W by generating electrostatic force. The electrostatic electrode 220 can be disposed within the dielectric plate 210. The electrostatic electrode 220 can be embedded in the dielectric plate 210. The electrostatic electrode 220 can be electrically connected to the electrostatic power supply 221. The electrostatic power supply 221 can selectively attract the substrate W by applying power to the electrostatic electrode 220.

[0065] Heater 230 is electrically connected to an external power source (not shown). Heater 230 generates heat by resisting current applied from the external power source. The generated heat is transferred to substrate W through dielectric plate 210. The heat generated by heater 230 maintains substrate W at a predetermined temperature. Heater 230 includes a helical coil. Heater 230 may be embedded in dielectric plate 210 at equal intervals.

[0066] The lower electrode 240 is located below the dielectric plate 210. The lower electrode 240 can be an electrode that forms an electric field in the internal space 101. The lower electrode 240 can be one of two opposing electrodes that form an electric field in the internal space 101. The lower electrode 240 can be positioned facing the upper electrode 420, which will be described later as another opposing electrode. The electric field formed by the lower electrode 240 in the internal space 101 can excite process gas supplied from the gas supply unit 300, which will be described later, thereby generating plasma. The lower electrode 240 can be disposed within the dielectric plate 210.

[0067] The upper surface of the lower electrode 240 can be stepped, such that the central region is higher than the edge region. The central region of the upper surface of the lower electrode 240 has a region corresponding to the bottom surface of the dielectric plate 210 and is bonded to the bottom surface of the dielectric plate 210. A first circulation channel 241, a second circulation channel 242, and a second supply channel 243 can be formed in the lower electrode 240.

[0068] The first circulation channel 241 is configured as a channel for circulating the heat transfer medium. The heat transfer medium stored in the heat transfer medium storage unit GS can be supplied to the first circulation channel 241 via the medium supply line GL. A medium supply valve GB can be installed in the medium supply line GL. Based on the opening / closing or the change in the opening degree of the medium supply valve GB, the supply flow rate of the heat transfer medium to be supplied to the first circulation channel 241 or the heat transfer medium supplied to the first circulation channel 241 per unit time can be controlled. The heat transfer medium may include helium (He).

[0069] The first circulation channel 241 may be formed in a spiral shape inside the lower electrode 240. Alternatively, annular channels with different radii may be arranged concentrically in the first circulation channel 241. The first circulation channels 241 may be interconnected. The first circulation channels 241 are formed at the same height.

[0070] The second circulation channel 242 is configured as a channel through which cooling fluid circulates. Cooling fluid stored in the cooling fluid storage unit CS can be supplied to the second circulation channel 242 via the fluid supply line CL. A fluid supply valve CB can be installed in the fluid supply line CL. Based on the opening / closing or the change in the opening degree of the fluid supply valve CB, the supply flow rate of the cooling fluid to be supplied to the second circulation channel 242 or the cooling fluid supplied to the second circulation channel 242 per unit time can be controlled. The cooling fluid can be cooling water or cooling gas. The cooling fluid supplied to the second circulation channel 242 can cool the lower electrode 240 to a predetermined temperature. The lower electrode 240, cooled to the predetermined temperature, can maintain the temperature of the dielectric plate 210 and / or the substrate W at the predetermined temperature.

[0071] The second circulation channel 242 may be formed in a spiral shape inside the lower electrode 240. Alternatively, annular channels with different radii may be arranged concentrically in the second circulation channel 242. The second circulation channels 242 may be interconnected. The second circulation channel 242 may have a larger cross-sectional area than the first circulation channel 241. The second circulation channels 242 are formed at the same height. The second circulation channel 242 may be located below the first circulation channel 241.

[0072] The second supply channel 243 extends upward from the first circulation channel 241 and is disposed on the upper surface of the lower electrode 240. The second supply channel 243 is provided in a number corresponding to the first supply channel 211, and allows the first circulation channel 241 and the first supply channel 211 to be in fluid communication with each other.

[0073] An insulating plate 250 is disposed below the lower electrode 240. The insulating plate 250 is configured to have dimensions corresponding to the lower electrode 240. The insulating plate 250 is located between the lower electrode 240 and the bottom surface of the chamber 100. The insulating plate 250 may be formed of an insulating material and can electrically insulate the lower electrode 240 from the chamber 100.

[0074] The gas supply unit 300 supplies process gas to the chamber 100. The gas supply unit 300 includes a gas storage unit 310, a gas supply line 320, and a gas inlet 330. The gas supply line 320 connects the gas storage unit 310 and the gas inlet 330, and supplies the process gas stored in the gas storage unit 310 to the gas inlet 330. The gas inlet 330 can be installed in a gas supply hole 422 formed in the upper electrode 420.

[0075] The upper electrode unit 400 may have an upper electrode 420 facing the lower electrode 240. Additionally, a gas supply unit 300 may be connected to the upper electrode unit 400 to provide part of the supply path for process gas supplied from the gas supply unit 300. The upper electrode unit 400 may include a support 410, the upper electrode 420, and a distribution plate 430.

[0076] The support 410 can be fastened to the chamber 100. The support 410 can be the main body for fastening the upper electrode 420 and the distribution plate 430 of the upper electrode unit 400. The support 410 can be a medium through which the upper electrode 420 and the distribution plate 430 are mounted in the chamber 100.

[0077] The upper electrode 420 may be an electrode facing the lower electrode 240. The upper electrode 420 may be configured to face the lower electrode 240. An electric field can be formed in the space between the upper electrode 420 and the lower electrode 240. The formed electric field can generate plasma by exciting the process gas supplied to the internal space 101. The upper electrode 420 may be disk-shaped. The upper electrode 420 may include an upper plate 420a and a lower plate 420b. The upper electrode 420 may be grounded. However, the embodiment is not limited to this; an RF power supply (not shown) may be connected to the upper electrode 420 to apply an RF voltage.

[0078] The bottom surface of the upper plate 420a is stepped, with the central region higher than the edge regions. An air supply port 422 is formed in the central region of the upper plate 420a. The air supply port 422 connects to the air inlet 330 and supplies process gas to the buffer space 424. A cooling channel 421 may be formed within the upper plate 420a. The cooling channel 421 may be spiral-shaped. Alternatively, annular channels with different radii may be concentrically arranged within the cooling channel 421. A temperature control unit 500, described later, may supply cooling fluid to the cooling channel 421. The supplied cooling fluid may circulate along the cooling channel 421 to cool the upper plate 420a.

[0079] The lower plate 420b is located below the upper plate 420a. The lower plate 420b is configured to have dimensions corresponding to the upper plate 420a and is positioned facing the upper plate 420a. The upper surface of the lower plate 420b is stepped, such that the central region is lower than the edge region. The upper surface of the lower plate 420b and the lower surface of the upper plate 420a combine with each other to form a buffer space 424. The buffer space 424 is configured to provide a space for gas supplied through the air supply port 422 to temporarily reside before being supplied to the chamber 100. An air supply port 423 is formed in the central region of the lower plate 420b. A plurality of air supply ports 423 are equally spaced apart. The air supply ports 423 are connected to the buffer space 424.

[0080] The distribution plate 430 is located below the lower plate 420b. The distribution plate 430 is configured in a disc shape. Distribution holes 431 are formed in the distribution plate 430. The distribution holes 431 are configured to extend from the upper surface to the lower surface of the distribution plate 430. The distribution holes 431 are arranged in a number corresponding to the air supply holes 423, and are positioned corresponding to the locations of the air supply holes 423. The process gas retained in the buffer space 424 is uniformly supplied to the chamber 100 through the air supply holes 423 and the distribution holes 431.

[0081] The temperature control unit 500 can control the temperature of the upper electrode 420. The temperature control unit 500 may include a heating element 511, a heating power supply 513, a filter 515, a cooling fluid supply unit 521, a fluid supply channel 523, and a valve 525.

[0082] Heating element 511 can heat lower plate 420b. Heating element 511 can be a heater. Heating element 511 can be a resistance heater. Heating element 511 can be embedded in lower plate 420b. Heating power supply 513 can generate electricity to allow heating element 511 to generate heat. Heating power supply 513 can heat lower plate 420b by generating heat from heating element 511. Heating power supply 513 can be a DC (direct current) power supply. Filter 515 can block the transmission of RF voltage (power) applied by power supply unit 600, which will be described later, to heating power supply 513.

[0083] The cooling fluid supply unit 521 can store cooling fluid for cooling the upper plate 420a. The cooling fluid supply unit 521 can supply cooling fluid to the cooling channel 421 through the fluid supply channel 523. The cooling fluid supplied to the cooling channel 421 can reduce the temperature of the upper plate 420a while flowing along the cooling channel 421. Additionally, a fluid valve 525 can be installed in the fluid supply channel 523 to control whether cooling fluid is supplied to the cooling channel 421 or the amount of cooling fluid supplied per unit time. The fluid valve 525 can be an on / off valve or a flow control valve.

[0084] The power supply unit 600 can apply a radio frequency (RF) voltage to the lower electrode 240. The power supply unit 600 can apply the RF voltage to the lower electrode 240 to create an electric field in the internal space 101. The electric field created in the internal space 101 can excite the process gas supplied to the internal space 101 to generate plasma. The power supply unit 600 may include a first power supply 610, a second power supply 620, a third power supply 630, and a matching component 640.

[0085] The first power supply 610 can apply a voltage with a first frequency to the downward electrode 240. The first frequency of the voltage generated by the first power supply 610 can be higher than the second and third frequencies of the voltages generated by the second power supply 620 and the third power supply 630, which will be described below. The first power supply 610 can be a source RF for generating plasma in the internal space 101. The first frequency can be 60 MHz.

[0086] The first power supply 610 can be configured to apply a first sustaining voltage or a first pulse voltage with a first frequency to the downward electrode 240. The first sustaining voltage can be a continuous wave (CW) RF. Alternatively, the first pulse voltage can be a pulsed RF.

[0087] The second power supply 620 can apply a voltage with a second frequency to the downward electrode 240. The second frequency of the voltage generated by the second power supply 620 is lower than the first frequency of the voltage generated by the first power supply 610 and higher than the third frequency of the voltage generated by the third power supply 630. The second power supply 620 can be a source RF that generates plasma in the internal space 101 together with the first power supply 610. The second frequency can be from 2 MHz to 9.8 MHz.

[0088] The second power supply 620 can be configured to apply a second sustaining voltage with a second frequency or a second pulse voltage with a second frequency to the downward electrode 240. The second sustaining voltage can be a continuous wave (CW) RF. Alternatively, the second pulse voltage can be a pulse RF.

[0089] The third power supply 630 can apply a voltage with a third frequency to the downward electrode 240. The third frequency of the voltage generated by the third power supply 630 can be lower than the first frequency of the voltage generated by the first power supply 610 and the second frequency of the voltage generated by the second power supply 620. The third power supply 630 can be a bias RF used to accelerate plasma ions in the internal space 101 together with the first power supply 610. The third frequency can be 40 kHz.

[0090] The third power supply 630 can be configured to apply a third sustaining voltage with a third frequency or a third pulse voltage with a third frequency to the downward electrode 240. The third sustaining voltage can be a continuous wave (CW) RF. Alternatively, the third pulse voltage can be a pulse RF.

[0091] Matching component 640 can perform impedance matching. Matching component 640 can be connected to the first power supply 610, the second power supply 620 and the third power supply 630 respectively, and can perform impedance matching for the voltages applied to the lower electrode 240 by the first power supply 610, the second power supply 620 and the third power supply 630.

[0092] The ring unit 700 can be arranged in the edge region of the support unit 200. The ring unit 700 may include an edge ring 710, an insulator 720, and a coupling ring 730.

[0093] An edge ring 710 may be disposed below the edge region of the substrate W. At least a portion of the edge ring 710 may be disposed below the edge region of the substrate W. The edge ring 710 may have an overall annular shape. The upper surface of the edge ring 710 may include an inner upper surface, an outer upper surface, and an inclined upper surface. The inner upper surface may be an upper surface adjacent to the central region of the substrate W. The outer upper surface may be an upper surface further away from the central region of the substrate W compared to the inner upper surface. The inclined upper surface may be an upper surface disposed between the inner and outer upper surfaces. The inclined upper surface may be an upper surface inclined upward in a direction away from the center of the substrate W. The edge ring 710 may expand the electric field forming region such that the substrate W is located at the center of the plasma forming region. The edge ring 710 may be a focusing ring. The edge ring 710 may be made of a material including Si or SiC.

[0094] When viewed from above, insulator 720 can be configured to surround edge ring 710. Insulator 720 can be made of insulating material. Insulator 720 can be configured to contain a material such as quartz or ceramic.

[0095] Harmonic control line EL can be connected to coupling ring 730. Coupling ring 730 can be disposed below edge ring 710 and insulator 720. Coupling ring 730 can be surrounded by edge ring 710, insulator 720, lower electrode 240 and dielectric plate 210. Coupling ring 730 can include annular body 731 and ring electrode 732 (an example of a conductive component). Annular body 731 can be formed of an insulating material. For example, annular body 731 can be made of an insulating material such as quartz or ceramic. Annular body 731 can be configured to surround annular electrode 732. Annular electrode 732 can be formed of a conductive material such as a material including metal. Furthermore, annular electrode 732 can be electrically connected to harmonic control unit 800 via harmonic control line EL. Therefore, harmonic components that may be generated in internal space 101 can be input to harmonic control unit 800 via harmonic control line EL.

[0096] The harmonic control unit 800 can control the harmonics generated by the RF power applied from the power supply unit 600 to the lower electrode 240. The harmonic control unit 800 can eliminate harmonic components in the electric field generated in the internal space 101. The electric field generated in the internal space 101 can be electrically coupled to the ring electrode 732.

[0097] The harmonic control unit 800 can eliminate harmonics that may occur due to plasma nonlinearity caused by the application of RF power to the lower electrode 240 by the power supply unit 600. The harmonic control unit 800 can be disposed between the ground terminal "G" (ground portion) and the ring electrode 732. Harmonic components flowing into the harmonic control unit 800 can be eliminated through the ground terminal "G". In other words, the harmonic control unit 800 can provide an elimination path for harmonic components.

[0098] The harmonics that can be eliminated by the harmonic control unit 800 may include second harmonics, third harmonics, and fourth to nth harmonics. The frequency of the nth harmonic may be an integer multiple of the first frequency of the voltage applied by the first power supply 610. Alternatively, the frequency of the nth harmonic may be an integer multiple of the second frequency of the voltage applied by the second power supply 620. For example, the frequency of the second harmonic may be twice the first frequency, where the first frequency may be the dominant frequency. For example, when the first frequency is 60 MHz, the second harmonic may be 120 MHz. Furthermore, the third harmonic may be 180 MHz. The fourth harmonic may be 240 MHz. The nth harmonic may have a frequency of (60 × n) MHz (where n is a natural number).

[0099] The specific configuration of the harmonic control unit 800 will be described later.

[0100] The controller 900 can control the substrate processing apparatus 10. The controller 900 can control the components of the substrate processing apparatus 10. The controller 900 can control the substrate processing apparatus 10 to perform the harmonic control method, which will be described later.

[0101] The controller 900 may include: a processing controller, which includes a microprocessor (computer) for controlling the substrate processing apparatus 10; a user interface, which includes a keyboard for an operator to input commands to manage the substrate processing apparatus 10 and a display for visually displaying the operating status of the substrate processing apparatus; and a storage unit that stores control programs for executing processes performed in the substrate processing apparatus 10 under the control of the processing controller, or programs for executing processes in each constituent unit according to various data and processing conditions, i.e., processing schemes. Furthermore, the user interface and the storage unit may be connected to the processing controller. The processing schemes may be stored in a storage medium in the storage unit, which may be a hard disk, a removable disk such as a CD-ROM or DVD, or a semiconductor memory such as flash memory.

[0102] Figure 3 It is a diagram. Figure 2 A schematic diagram of the harmonic control unit. (Refer to...) Figure 3The harmonic control unit 800 may include a blocking unit 810 and an elimination unit 820. The blocking unit 810 can block the frequency components of RF power from flowing to the ground terminal G. The elimination unit 820 is disposed between the blocking unit 810 and the ground terminal and can eliminate the harmonic components of the plasma.

[0103] The blocking unit 810 can block the frequency component of the RF power applied to the lower electrode 240 by the power supply unit 600 from flowing to the ground terminal "G". The blocking unit 810 may include a first blocking filter 812, a second blocking filter 814 and a third blocking filter 816.

[0104] The first blocking filter 812 can block the flow of current having a first frequency component of the voltage applied by the first power supply 610 to the ground terminal "G". The first blocking filter 812 can be a band-stop filter. However, the embodiments are not limited thereto and the first blocking filter 812 can be implemented using a combination of known filters. The first blocking filter 812 can block the flow of current having a frequency band including the first frequency to the ground terminal G.

[0105] The second blocking filter 814 can block the flow of current having a second frequency component of the voltage applied by the second power supply 620 to the ground terminal G. The second blocking filter 814 can be a band-stop filter. However, the embodiments are not limited to this and the second blocking filter 814 can be implemented using a combination of known filters. The second blocking filter 814 can block the flow of current having a frequency band including the second frequency to the ground terminal G.

[0106] The third blocking filter 816 can block the current flow to the ground terminal G having a third frequency component of the voltage applied by the third power supply 630. The third blocking filter 816 can be a band-stop filter. However, the embodiments are not limited to this and the third blocking filter 816 can be implemented using a combination of known filters. The third blocking filter 816 can block the current flow to the ground terminal G having a frequency band including the third frequency.

[0107] In other words, when the RF power applied to the lower electrode 240 by the power supply unit 600 flows into the harmonic control unit 800, the blocking unit 810 of this invention can minimize the loss of RF power. In other words, the harmonic control unit 800 does not eliminate the RF power component of the electromagnetic waves formed in the internal space 101, but only helps to selectively eliminate harmonic components.

[0108] The elimination unit 820 can eliminate harmonic components. The elimination unit 820 can be disposed between the blocking unit 810 and the ground terminal G to eliminate harmonic components. The elimination unit may include a first harmonic elimination unit 821, a second harmonic elimination unit 822, a third harmonic elimination unit 823, a fourth harmonic elimination unit 824, and a fifth harmonic elimination unit 825. The first harmonic elimination unit 821 may include a first blocking filter 821a and a first harmonic control circuit 821b. The second harmonic elimination unit 822 may include a second blocking filter 822a and a second harmonic control circuit 822b. The third harmonic elimination unit 823 may include a third blocking filter 823a and a third harmonic control circuit 823b. The fourth harmonic elimination unit 824 may include a fourth blocking filter 824a and a fourth harmonic control circuit 824b. The fifth harmonic elimination unit 825 may include a fifth blocking filter 825a and a fifth harmonic control circuit 825b.

[0109] The first to fifth harmonic cancellation units 821 to 825 may each have different cancelable harmonic components. For example, the first harmonic cancellation unit 821 may be configured to cancel the p-th harmonic (where p is a natural number). The second harmonic cancellation unit 822 may be configured to cancel the q-th harmonic (where q is a natural number). The q-th harmonic may be different from the p-th harmonic.

[0110] For example, the first harmonic cancellation unit 821 can be configured to cancel the second harmonic. Furthermore, the second harmonic cancellation unit 822 can be configured to cancel the third harmonic. Furthermore, the third harmonic cancellation unit 823 can be configured to cancel the fourth harmonic. Furthermore, the fourth harmonic cancellation unit 824 can be configured to cancel the fifth harmonic. Furthermore, the fifth harmonic cancellation unit 825 can be configured to cancel the sixth harmonic.

[0111] The first to fifth harmonic cancellation units 821 to 825 can have essentially the same / similar structures. Therefore, in the following description, the first harmonic cancellation unit 821 will be described primarily, and repeated descriptions will be omitted.

[0112] The first harmonic cancellation unit 821 may include a first blocking filter 821a and a first harmonic control circuit 821b. The first blocking filter 821a may be configured to block frequency components other than the p-th harmonic (e.g., the second harmonic) in the harmonic components. The first blocking filter 821a may be a bandpass filter. However, embodiments are not limited thereto, and the first blocking filter 821a may be constructed from a combination of known filters. All other frequency components except the p-th harmonic are blocked by the first blocking filter 821a, and only the current of the p-th harmonic frequency component can flow to the first harmonic control circuit 821b. The first harmonic control circuit 821b may be a circuit including a first inductor L1 and a first capacitor C1 as a variable capacitor. In this case, the controller 900 may control the capacitance of the first capacitor C1, causing the first harmonic control circuit 821b to become a resonant circuit. For example, as... Figure 5 As shown, the capacitance of the first capacitor C1 can be adjusted so that the resonant frequency f0 of the first harmonic control circuit 821b becomes the frequency of the p-th harmonic. That is, the first harmonic control circuit 821b can be a resonant circuit with a frequency of the p-th harmonic. In this case, the impedance of the first harmonic control circuit 821b can be minimized, and the current flowing through the p-th harmonic frequency component of the first harmonic control circuit 821b can flow at its maximum value.

[0113] The frequency components other than the p-th harmonic can be blocked by the first blocking filter 821a, and the current with the p-th harmonic frequency component can flow to the ground terminal G at its maximum value in the first harmonic control circuit 821b to be eliminated. Therefore, the p-th harmonic frequency component can be effectively eliminated.

[0114] Similarly, the second harmonic cancellation unit 822 includes: a second blocking filter 822a for blocking frequency components other than the frequency component of the qth harmonic (e.g., the third harmonic), which is different from the p-th harmonic; and a second harmonic control circuit 822b disposed between the second blocking filter 822a and the ground terminal G. Similar to the first harmonic control circuit 821b, the second harmonic control circuit 822b may be a circuit including a second inductor and a second capacitor. The controller 900 can adjust the capacitance of the second capacitor so that the second harmonic control circuit 822b becomes a resonant circuit for the frequency of the q-th harmonic.

[0115] Similarly, the third harmonic cancellation unit 823 may include a third blocking filter 823a and a third harmonic control circuit 823b. The fourth harmonic cancellation unit 824 may include a fourth blocking filter 824a and a fourth harmonic control circuit 824b. The fifth harmonic cancellation unit 825 may include a fifth blocking filter 825a and a fifth harmonic control circuit 825b. The nth harmonic controller 82n may include an nth blocking filter 82na and an nth harmonic control circuit 82nb (where n is a natural number).

[0116] That is, in the harmonic control unit 800 according to an embodiment of the present invention, among the components of the electric field generated in the internal space 101, the component caused by the voltage applied by the power supply unit 600 is blocked and not eliminated by the harmonic control unit 800, but can be configured to eliminate multiple harmonics. Therefore, harmonic components can be effectively eliminated.

[0117] The method for controlling harmonics according to embodiments of the present invention may include the following operations.

[0118] First, the blocking unit 810 of the harmonic control unit 800, connected to the annular unit 700 disposed on the edge region of the support unit 200 on the support substrate W, can block the frequency component of the RF power applied by the power supply unit 600 from flowing to the ground terminal. When the power supply unit 600 applies RF power to the downward electrode 240, the applied power forms an electric field in the internal space 101. This electric field can be an electromagnetic wave. The electromagnetic wave may include components generated by the power applied by the power supply unit 600 and harmonic components that may be generated due to various reasons. This electric field can be coupled to the annular electrode 732 of the annular unit 700.

[0119] Secondly, harmonics passing through the blocking unit 810 can be eliminated by the elimination unit of the harmonic control unit 800. In the harmonic elimination operation, the blocking filter can block frequency components other than the harmonic frequency components, and harmonics can be eliminated by a harmonic control circuit with a variable capacitor. In this case, the variable capacitor of the harmonic control circuit can be adjusted to eliminate harmonic components more effectively.

[0120] Furthermore, in the operation of eliminating harmonics, the first to fifth blocking filters 821a to 825a can block the remaining frequency components other than the frequency components assigned to their respective harmonics, and the capacitance of the variable capacitors of the first to fifth harmonic control circuits 821b to 825b can be adjusted to become a resonant circuit with the frequency of each assigned harmonic.

[0121] Figure 6 This is a schematic diagram illustrating the appearance of the harmonic control unit and detection unit of a substrate processing apparatus according to another embodiment of the present invention. Figure 7 The diagram is drawn by Figure 6 The graph shows the current changes of the harmonic components detected by the detection unit.

[0122] Reference Figure 6 and Figure 7 The substrate processing apparatus according to an embodiment of the present invention may further include a detection unit SU. The detection unit SU can detect the voltage or current flowing through the harmonic control unit 800. The detection unit SU may include a first detection member S1, a second detection member S2, a third detection member S3, a fourth detection member S4, and a fifth detection member S5. The first to fifth detection members S1 to S5 may be ammeters or voltmeters. The electrical output detected by the first to fifth detection members S1 to S5 can be transmitted to a controller 900. The controller 900 can adjust the capacitance of the variable capacitor (e.g., the first to fifth capacitors) of the harmonic control unit 800 based on the voltage or current value measured by the detection unit SU. For example, the controller 900 can adjust the capacitance of the variable capacitor (e.g., the first to fifth capacitors) such that the magnitude of the current detected by the detection unit SU is maximized.

[0123] In the above example, the detection unit SU is disposed between the blocking filters 821a to 825a and the harmonic control circuits 821b to 825b, but the embodiment is not limited thereto. For example, the detection unit SU may include an ammeter or a voltmeter, and may also be disposed between the blocking unit 810 and the elimination unit 820.

[0124] In the examples above, the series connection of inductors and capacitors constituting harmonic control circuits 821b to 825b has been described, but the embodiments are not limited thereto. For example, as Figure 9 As shown, the inductors and capacitors that constitute the harmonic control circuits 821b to 825b can also be connected in parallel.

[0125] In the above example, the detection unit SU has been described as being electrically arranged among the components of the harmonic control unit 800; however, the embodiments are not limited to this. For example, as Figure 10 As shown, the detection unit SU can be arranged between the ring unit 700 and the harmonic control unit 800.

[0126] According to embodiments conceived in this invention, the substrate can be processed efficiently.

[0127] Furthermore, according to embodiments conceived in this invention, the uniformity of substrate processing using plasma can be improved.

[0128] Furthermore, according to embodiments conceived in this invention, it is possible to obtain the advantages of generating plasma using continuous wave RF and the advantages of generating plasma using pulsed RF.

[0129] Furthermore, according to embodiments conceived in this invention, it is possible to produce objects etched by plasma in a substantially vertical shape.

[0130] Furthermore, according to embodiments of the present invention, when plasma is generated using pulsed voltage, the uniformity of the plasma density generated per unit area of ​​the substrate can be improved.

[0131] The effects of this invention are not limited to those described above. Those skilled in the art will clearly understand other effects of this invention based on the provided disclosure and accompanying drawings.

[0132] Since the above embodiments are presented to aid in understanding the inventive concept, it should be understood that they do not limit the scope of the inventive concept, and various variations thereof also fall within the scope of the inventive concept. For example, each component described as a single type can be implemented in a distributed manner. Similarly, components described as distributed can be implemented in a combined manner. Therefore, the technical protection scope of the inventive concept should be determined by the technical spirit of the appended claims, and it should be understood that the technical protection scope of the inventive concept is not limited to the text of the claims, but actually relates to inventions with equivalent technical value.

Claims

1. A substrate processing apparatus, comprising: A chamber having an internal space in which plasma is used to process a substrate; A support unit configured to support a substrate in the internal space; The ring-shaped unit is arranged on the edge region of the support unit when viewed from above; A power supply unit configured to generate RF power for forming an electric field in the internal space; and A harmonic control unit, connected to the ring unit, controls the harmonics generated by the RF power. The ring unit includes: An edge ring, arranged to overlap with the edge region of the substrate supported by the support unit when viewed from above; and A coupling ring is arranged below the edge ring. The harmonic control unit is connected to the coupling ring. The coupling ring includes: Ring electrode; and An annular body, formed of an insulating material and surrounding at least a portion of the annular electrode. The harmonic control unit is electrically connected to the ring electrode. The harmonic control unit includes: A blocking unit configured to block the frequency components of the RF power from flowing to ground; and An elimination unit is disposed between the blocking unit and the grounding terminal to eliminate the harmonics. The elimination unit includes: A first blocking filter is configured to block frequency components other than the frequency component of the p-th harmonic; and A first harmonic control circuit is disposed between the first blocking filter and the ground terminal. The elimination unit further includes: A second blocking filter is configured to block frequency components other than the frequency component of the qth harmonic, which is different from the p-th harmonic; and The second harmonic control circuit is disposed between the second blocking filter and the ground terminal.

2. The substrate processing apparatus of claim 1, wherein the first harmonic control circuit includes a first inductor and a first capacitor, and the second harmonic control circuit includes a second inductor and a second capacitor.

3. The substrate processing apparatus of claim 2, further comprising: A controller configured to control the harmonic control unit, The first capacitor and the second capacitor are variable capacitors, and the controller is configured to adjust the capacitance of the first capacitor and the second capacitor such that the first harmonic control circuit constitutes a resonant circuit having the frequency of the p-th harmonic and the second harmonic control circuit constitutes a resonant circuit having the frequency of the q-th harmonic.

4. The substrate processing apparatus of claim 3, further comprising: A detection unit is used to detect the voltage or current flowing to or to the harmonic control unit.

5. The substrate processing apparatus of claim 4, wherein the controller is configured to adjust the capacitance of at least one of the first capacitor and the second capacitor based on the voltage or current measured by the detection unit.

6. The substrate processing apparatus of claim 1, wherein the power supply unit comprises: A first power source is configured to apply a first voltage having a first frequency to the electrodes that form the electric field; A second power source is configured to apply a second voltage having a lower frequency than the first frequency to the electrodes; and A third power source is configured to apply a third voltage to the electrodes having a third frequency that is lower than the first and second frequencies.

7. The substrate processing apparatus of claim 6, wherein the blocking unit comprises: A first blocking filter is configured to block a first frequency component of the first voltage; A second blocking filter is configured to block the second frequency component of the second voltage; and A third blocking filter is configured to block the third frequency component of the third voltage.

8. A harmonic control unit for controlling harmonics generated in a substrate processing apparatus and connected to a conductive component, wherein the substrate processing apparatus includes a chamber having an internal space in which plasma is used to process a substrate and includes electrodes for forming an electric field and the conductive component mounted at a location different from the location of the electrodes. The conductive component is a ring-shaped unit arranged on the edge region of the support unit of the support substrate when viewed from above; The ring unit includes: An edge ring, arranged to overlap with the edge region of the substrate supported by the support unit when viewed from above; and A coupling ring is arranged below the edge ring, wherein the harmonic control unit is connected to the coupling ring; The coupling ring includes: Ring electrode; and A ring-shaped body, formed of an insulating material and surrounding at least a portion of the ring electrode, wherein the harmonic control unit is electrically connected to the ring electrode. The harmonic control unit includes: A blocking unit configured to block the flow of frequency components of the RF power forming the electric field to ground from the frequency components flowing into the harmonic control unit; and An elimination unit is disposed between the blocking unit and the grounding terminal to eliminate the harmonics. The elimination unit includes: First harmonic cancellation unit; and The second harmonic cancellation unit is configured to cancel frequency components that are different from the frequency components of the first harmonic cancellation unit. The first harmonic cancellation unit includes: A first blocking filter is configured to block frequency components other than the frequency component of the p-th harmonic; and A first harmonic control circuit is disposed between the first blocking filter and the ground terminal. The second harmonic cancellation unit includes: A second blocking filter is configured to block frequency components other than the frequency component of the qth harmonic, which is different from the p-th harmonic; and The second harmonic control circuit is disposed between the second blocking filter and the ground terminal.

9. The harmonic control unit as claimed in claim 8, wherein the first harmonic control circuit and the second harmonic control circuit respectively include a first capacitor and a second capacitor. The first capacitor and the second capacitor are variable capacitors, and the capacitance of the first capacitor and the second capacitor are adjusted such that the first harmonic control circuit constitutes a resonant circuit having the frequency of the p-th harmonic and the second harmonic control circuit constitutes a resonant circuit having the frequency of the q-th harmonic.

10. A method for controlling harmonics generated in a chamber using plasma to process a substrate, the method comprising: The frequency component of the RF power applied to the electrodes that form an electric field in the chamber is blocked from flowing to the ground terminal by the blocking unit of the harmonic control unit, wherein the harmonic control unit is connected to the ring unit arranged on the edge region of the support unit supporting the substrate. and The harmonics passing through the blocking unit are eliminated by the elimination unit of the harmonic control unit. The ring unit includes: An edge ring, arranged to overlap with the edge region of the substrate supported by the support unit when viewed from above; and A coupling ring is arranged below the edge ring, wherein the harmonic control unit is connected to the coupling ring; The coupling ring includes: Ring electrode; and A ring-shaped body, formed of an insulating material and surrounding at least a portion of the ring electrode, wherein the harmonic control unit is electrically connected to the ring electrode. The elimination of the harmonics includes: Blocking frequency components other than the frequency components of the harmonics; and The harmonics are eliminated by a harmonic control circuit with a variable capacitor. The elimination of the harmonics includes: The first blocking filter blocks frequency components other than the p-th harmonic frequency component of the harmonic; and The p-th harmonic is eliminated by a first harmonic control circuit that forms a resonant circuit having the frequency of the p-th harmonic. The elimination of harmonics by the elimination unit includes: The second blocking filter blocks frequency components other than the frequency component of the qth harmonic, which is different from the p-th harmonic; and The qth harmonic is eliminated by a second harmonic control circuit, which is different from the first harmonic control circuit and has a resonant circuit with the frequency of the qth harmonic.

11. The method of claim 10, further comprising: The capacitance of the variable capacitor is adjusted so that the harmonic control circuit forms a resonant circuit with the frequency of the harmonic.

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