A nanowire anode vacuum infrared detector and its fabrication method

Abstract

This invention discloses a nanowire anode vacuum infrared detector and its fabrication method, comprising: a cold cathode lattice substrate and an anode substrate. The cold cathode lattice substrate includes a cathode substrate, a cathode electrode layer, a cathode thin film lattice, and a cathode emitter lattice. The anode substrate includes an anode substrate, a first anode electrode layer, an anode copper substrate, and an anode nanowire thin film. The cold cathode lattice substrate and the anode substrate are parallelly separated and fixed by a high-voltage insulating isolator, with a vacuum gap between them. The vacuum gap effectively reduces the dark current of the infrared detector and improves the current gain. Electrons emitted from the cathode emitter lattice electron source gain high energy under high voltage, bombarding the photoconductor nanowires and causing collisional ionization to generate a large number of electron-hole pairs, i.e., the EBIPC effect. When the applied electric field is not illuminated, the electric field applied to the cold cathode is insufficient to induce the EBIPC effect. Under illumination, the EBIPC effect is activated, enabling high-sensitivity detection.

Description

Technical Field

[0001] This invention relates to the field of infrared detectors, and in particular to a nanowire anode vacuum infrared detector and its fabrication method. Background Technology

[0002] Infrared detection devices have important applications in civilian, defense, astrophysical research, and medical fields. Room temperature operation, high resolution, high sensitivity, fast response, radiation resistance, low cost, and lightweight design are key requirements for the development of infrared detection devices. While classic infrared detectors based on mercury cadmium telluride (HCdT) offer advantages such as high quantum efficiency, high sensitivity, and low dark current, their fabrication process is complex and costly, and they suffer from poor high-voltage resistance, radiation resistance, and repeatability challenges. Indium gallium arsenide (IGaAs) and quantum well infrared detectors require operation at lower temperatures, have high power consumption, large size, and high cost, limiting their application range. Compared to traditional detectors, vacuum detectors offer advantages such as low dark current, room temperature operation, and radiation resistance, meeting the development needs of infrared detection devices and demonstrating enormous potential in the field of infrared detection.

[0003] Photoconductive thin films generate photogenerated carriers under illumination, thus increasing their conductivity. Furthermore, high-energy electron bombardment of the photoconductive thin film generates a large number of electron-hole pairs, increasing the photocurrent and resulting in photomultiplication. Therefore, the increase in photoconductivity in a vacuum detector under illumination reduces the partial voltage of the photoconductor, thereby increasing the vacuum gap bias and the emission current. More electron bombardment of the photoconductor further increases its conductivity and decreases the partial voltage of the photoconductor. This positive feedback process continues until the partial voltage of the photoconductor and the vacuum gap bias reach equilibrium; this is the electron bombardment-induced photoconductivity (EBIPC) photomultiplication mechanism. In existing reports, the anode of vacuum detectors uses photoconductive thin films, and their detection efficiency is highly dependent on the film thickness and quality. Too thin a film results in weak light absorption and low photocurrent. Defects and grain boundaries in the film severely affect electron transport, thus reducing detection efficiency. In contrast, optoelectronic nanowires are easier to fabricate in lengths exceeding the micrometer scale, and due to dimensional constraints, electron transport occurs only in one dimension, resulting in a significantly higher conductivity variation compared to thin film materials. Secondly, the small size and dimensionality of nanowires facilitate device miniaturization and low power consumption, meeting the development requirements of novel infrared detectors. High-resolution detection can be achieved by fabricating individually vertically aligned nanowire anodes using electron beam lithography. Furthermore, the high specific surface area of ​​nanowires can improve light absorption efficiency, and their abundant surface states allow for the modulation of photoelectric properties. Therefore, using optoelectronic nanowires as the anode of vacuum infrared detectors has significant research value. Summary of the Invention

[0004] The purpose of this invention is to provide a nanowire anode vacuum infrared detector and its preparation method, so as to solve one or more technical problems existing in the prior art, and at least provide a beneficial option or create conditions.

[0005] The technical solution adopted to solve the above-mentioned technical problems is as follows:

[0006] Firstly, this invention provides a nanowire anode vacuum infrared detector, which includes: a cold cathode matrix substrate and an anode substrate.

[0007] The cold cathode lattice substrate includes, from the outside to the inside, a transparent cathode substrate, a cathode electrode layer on the cathode substrate, a cathode thin film lattice on the cathode electrode layer, and a cathode emitter lattice on the cathode thin film lattice.

[0008] The anode substrate includes, from the outside to the inside, a transparent anode substrate, a first anode electrode layer on the anode substrate, an anode growth source film on the first anode electrode layer, and an anode nanowire film on the anode growth source film;

[0009] The cold cathode lattice substrate and the anode substrate are fixed in parallel by a high-voltage insulated isolator, and a vacuum gap is left between the cold cathode lattice substrate and the anode substrate.

[0010] The beneficial effects of this invention are: the cold cathode vacuum diode allows the device to operate at room temperature; the vacuum gap of the cold cathode diode effectively reduces the dark current of the infrared detector and improves the current gain; the radiation-resistant, room-temperature operating high-sensitivity vacuum infrared detector operates at a high voltage, and the electrons emitted by the cathode emitter array gain high energy under high voltage, bombarding the photoconductor nanowires and generating a large number of electron-hole pairs, i.e., the EBIPC effect. Electrons are transported axially and have a higher mobility compared to thin film materials, thus generating a higher photocurrent. When the applied electric field is not illuminated, the electric field applied to the cold cathode is insufficient to induce the EBIPC effect; under illumination, the EBIPC effect is activated, thus achieving high-sensitivity detection.

[0011] As a further improvement to the above technical solution, an exhaust hole is provided on the cathode substrate.

[0012] As a further improvement to the above technical solution, the cathode electrode layer is a transparent conductive film; the first anode electrode layer is a conductive film, which includes Cr, Ni, Ti metal films or ITO conductive films.

[0013] As a further improvement to the above technical solution, the isolator is made of ceramic or quartz insulating material, the height of the isolator is 100–500 μm, and the vacuum degree of the vacuum gap is 10. -7 ~10-3 Pa.

[0014] As a further improvement to the above technical solution, the cathode emitter array is a cathode electron source array capable of emitting electrons, and the cathode emitter includes zinc oxide nanowires, tungsten oxide nanowires, copper oxide nanowires, carbon nanotubes, or quasi-one-dimensional metal oxide semiconductor nanowires modified with thermoelectric materials.

[0015] As a further improvement to the above technical solution, the anode nanowire film is an infrared-sensitive optoelectronic material nanowire.

[0016] As a further improvement to the above technical solution, the infrared-sensitive optoelectronic material nanowires include Si nanowires, Ge nanowires, GaAs nanowires, GaSb nanowires, InSb nanowires, InP nanowires, InAs nanowires, SnSe nanowires, SnS nanowires, or CuO nanowires.

[0017] As a further improvement to the above technical solution, the anode substrate is replaced with an addressable anode substrate. The addressable anode substrate includes a transparent anode substrate, a high-voltage TFT and a nanowire array anode arranged in parallel on the anode substrate. The high-voltage TFT includes a gate electrode, a source electrode, and a drain electrode. The nanowire array anode includes a second anode electrode layer, an anode growth source film, and an anode nanowire array. The gate electrode is located on the anode substrate. A gate insulating layer is provided on the gate electrode and the anode substrate. An active layer is provided on the gate insulating layer above the gate electrode. The source electrode and the drain electrode are located on the gate insulating layer. A passivation layer is provided on the source electrode, the drain electrode, and the active layer. A bias drain structure exists between the gate electrode and the drain electrode. The anode nanowire array is vertically grown above the drain electrode extension region. The second anode electrode layer connects the anode nanowire array and the drain electrode through etched vias.

[0018] Furthermore, the present invention also provides a method for manufacturing the above-mentioned nanowire anode vacuum infrared detector, the specific steps of which are as follows:

[0019] S1. Prepare a cold cathode lattice substrate. Clean the cathode substrate and deposit ITO electrodes as the cathode electrode layer on the cathode substrate using magnetron sputtering vacuum deposition technology. The ITO deposition power is 1.27 kW, the deposition time is 35 min, and the film thickness is 500 μm. Prepare a square cathode thin film lattice on the ITO thin film using photolithography and electron beam evaporation technology. The square lattice has a side length of 100 μm and a spacing of 100 μm between lattices. Grow a cathode emitter lattice on the cathode thin film lattice using thermal oxidation. The area of ​​the cathode emitter lattice distribution region is approximately 1 cm². 2 ;

[0020] S2. Prepare an anode substrate, manufacture an anode substrate of a set size, and clean the anode substrate. Use magnetron sputtering vacuum deposition technology to deposit a conductive electrode on the anode substrate as the first anode electrode layer. Prepare an anode growth source film of a set size, and clean the anode substrate with the above structure to prepare an anode nanowire film.

[0021] S3. Insulate and fix the anode substrate and the cold cathode lattice substrate to each other through an insulator, and vacuum seal the vacuum gap between the anode substrate and the cold cathode lattice substrate.

[0022] The fabrication steps for the addressable anode substrate are as follows: An anode substrate of a predetermined size is manufactured and cleaned. A gate electrode with a thickness of 200 nm is fabricated on the anode substrate. A gate insulating layer with a thickness of approximately 300 nm is deposited above the gate electrode using plasma-enhanced chemical vapor deposition (PECVD). An active layer with a thickness of approximately 50 nm is fabricated above the gate insulating layer. A source electrode, a drain electrode, and a drain electrode extension region with a thickness of 200 nm are fabricated above the active layer. A passivation layer with a thickness of 300 nm is fabricated above the electrodes using PECVD. Vias are etched into the passivation layer using reactive ion etching (RIE). A second anode electrode layer with a thickness of 300 nm is fabricated above the passivation layer using ultraviolet lithography and magnetron sputtering. An anode growth source film is fabricated above the second anode electrode layer using ultraviolet lithography and electron beam evaporation (EBSE). An anode nanowire array is then fabricated.

[0023] The beneficial effects of this invention are as follows: Utilizing the device characteristics of a vacuum diode, it can operate under high voltage and effectively reduce the dark current of the detection device, thereby improving current gain. Simultaneously, due to vacuum encapsulation, external radiation interference does not affect the operation of the detection device; when infrared light irradiates the anode infrared-sensitive photoelectric material nanowire, a large number of electron-hole pairs appear in the nanowire due to the EBIPC effect. Furthermore, because the nanowire's dimensions are limited, electrons move only in one dimension, resulting in a significantly higher conductivity change compared to thin-film materials. This further increases the photocurrent and improves the device's detection sensitivity; when an addressable anode substrate is used, the device can achieve imaging functionality. Attached Figure Description

[0024] The present invention will be further described below with reference to the accompanying drawings and embodiments;

[0025] Figure 1 This is a schematic diagram of a nanowire anode vacuum infrared detector device in an embodiment of the present invention;

[0026] Figure 2 This is a top view of the cold cathode lattice substrate for ZnO nanowires in an embodiment of the present invention;

[0027] Figure 3 This is a top view of the anode substrate of CuO nanowires in an embodiment of the present invention;

[0028] Figure 4 This is a top view schematic diagram of the addressable anode substrate of the imageable nanowire anode vacuum infrared detector in an embodiment of the present invention;

[0029] Figure 5 This is a flowchart illustrating the fabrication process of the addressable anode substrate for the imageable nanowire anode vacuum infrared detector in an embodiment of the present invention.

[0030] Figure 6 This is a schematic diagram of a nanowire anode vacuum infrared detector capable of high-resolution imaging in an embodiment of the present invention. Detailed Implementation

[0031] This section will describe in detail specific embodiments of the present invention. Preferred embodiments of the present invention are shown in the accompanying drawings. The purpose of the drawings is to supplement the textual description with graphics, so that people can intuitively and vividly understand each technical feature and overall technical solution of the present invention, but they should not be construed as limiting the scope of protection of the present invention.

[0032] In the description of this invention, it should be understood that the orientation descriptions, such as up, down, front, back, left, right, etc., are based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting this invention.

[0033] In the description of this invention, if there are words such as "several", they mean one or more, "multiple" means two or more, "greater than", "less than", "exceeding" etc. are understood to exclude the number itself, and "above", "below", "within" etc. are understood to include the number itself.

[0034] In the description of this invention, unless otherwise explicitly defined, terms such as "set up," "install," and "connect" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this invention in conjunction with the specific content of the technical solution.

[0035] Reference Figures 1-6 The nanowire anode vacuum infrared detector of the present invention is provided in the following two embodiments:

[0036] Example 1:

[0037] like Figures 1 to 3 As shown, where Figure 1In this embodiment, the nanowire anode vacuum infrared detector includes a cold cathode lattice substrate and an anode substrate arranged in parallel with each other. An isolator 7 is provided between the cold cathode lattice substrate and the anode substrate. The isolator 7 is a high voltage insulating component. The isolator 7 separates and fixes the cold cathode lattice substrate and the anode substrate, thus forming a vacuum gap between the cold cathode lattice substrate and the anode substrate.

[0038] The isolator 7 is composed of insulating materials such as ceramic sheets and quartz sheets, and the height of the isolator 7 is in the range of 100 to 500 μm.

[0039] The cold cathode lattice substrate includes a cathode substrate 3, a cathode electrode layer 4, a cathode thin film lattice 5, and a cathode emitter lattice 6. The cathode substrate 3 is a transparent component. Specifically, in this embodiment, the cathode substrate 3 is made of transparent glass. The cathode electrode layer 4 is disposed on the cathode substrate 3, the cathode thin film lattice 5 is disposed on the cathode electrode layer 4, and the cathode emitter lattice 6 is disposed on the cathode thin film lattice 5.

[0040] When in use, the cathode electrode layer 4 is connected to an ammeter.

[0041] Furthermore, the cathode substrate 3 is provided with an exhaust port 2, which connects the vacuum gap to the outside world.

[0042] In this embodiment, the cathode electrode layer 4 is a transparent conductive film, such as an ITO conductive film, with a thickness of 500 nm.

[0043] The cathode emitter lattice 6 employs a cathode electron source array, which can emit electrons. The cathode emitter lattice 6 includes zinc oxide nanowires, tungsten oxide nanowires, copper oxide nanowires, carbon nanotubes, or quasi-one-dimensional metal oxide semiconductor nanowires modified with thermoelectric materials. These nanocold cathodes can be fabricated over large areas with low cost, high reproducibility, and stable emission.

[0044] The anode substrate includes an anode substrate 11, a first anode electrode layer 10, an anode copper substrate 9, and an anode nanowire thin film 8. The anode substrate 11 is a transparent glass plate. The first anode electrode layer 10 is disposed on the anode substrate 11, the anode copper substrate 9 is disposed on the first anode electrode layer 10, and the anode nanowire thin film 8 is disposed on the anode copper substrate 9.

[0045] When in use, the first anode electrode layer 10 is connected to a voltage source.

[0046] The first anode electrode layer 10 is made of a conductive thin film, including metal thin films such as Cr, Ni, and Ti, as well as conductive thin films such as ITO.

[0047] The anode nanowire film 8 uses infrared-sensitive optoelectronic material nanowires, including nanowire films such as Si nanowires, Ge nanowires, GaAs nanowires, GaSb nanowires, InSb nanowires, InP nanowires, InAs nanowires, SnSe nanowires, SnS nanowires and CuO nanowires.

[0048] In this embodiment, the cold cathode lattice substrate is a ZnO nanowire lattice cathode substrate, while the anode substrate is an infrared-sensitive CuO nanowire anode substrate.

[0049] The fabrication steps of the nanowire anode vacuum infrared detector in this embodiment are as follows:

[0050] Preparation of S1 and ZnO nanowire lattice cathode substrate: Prepare a glass cathode substrate 3 with an area of ​​2.5cm×3cm and a thickness of 3mm. Prepare vent holes 2 on the cathode substrate 3. Use acetone, ethanol and deionized water for ultrasonic cleaning respectively. Finally, blow dry with a nitrogen gun.

[0051] ITO electrodes were deposited on the cathode substrate 3 as the cathode electrode layer 4 using magnetron sputtering vacuum deposition technology. The ITO deposition power was 1.27 kW, the deposition time was 35 min, and the film thickness was 500 μm. Square Zn cathode film lattices 5 were prepared on the ITO film using photolithography and electron beam evaporation technology. The square lattices had a side length of 100 μm and the spacing between the lattices was 100 μm. ZnO nanowire cathode emitter lattices 6 were grown on the cathode film lattices 5 using a thermal oxidation method. The oxidation temperature was 470 °C, the oxidation time was 3 h, and the distribution area of ​​the ZnO nanowire cathode emitter lattice 6 was approximately 1 cm². 2 The height of the nanowires is approximately 3–7 μm, and the diameter of the tip is approximately 40 nm.

[0052] For the preparation of the S2 and CuO nanowire anode substrate, a glass anode substrate 11 with an area of ​​2.5cm × 3cm and a thickness of 3mm was prepared and cleaned. An ITO electrode was deposited on the anode substrate 11 as the first anode electrode layer 10 using magnetron sputtering vacuum deposition technology. The ITO deposition power was 1.27kW, the deposition time was 35min, and the film thickness was 500μm. A 0.5mm thick, 1.2×1.2cm nanowire nanowire substrate was then prepared using acetone, ethanol, and deionized water, respectively. 2 The copper anode substrate 9 was ultrasonically cleaned and then dried with a nitrogen gun. A CuO nanowire anode nanowire film 8 was prepared on the copper anode substrate 9 using a thermal oxidation method at a temperature of 430℃ for 6 hours. The emitter height in the CuO nanowire anode nanowire film 8 was approximately 3–20 μm, and the tip diameter was approximately 60 nm. The copper anode substrate 9 with the grown CuO nanowires was then fixed onto the first anode electrode layer 10.

[0053] S3. Fabricate a high-sensitivity vacuum infrared detector that is radiation-resistant and operates at room temperature. The side of the anode substrate with the anode nanowire film 8 grown on it and the side of the cathode substrate with the cathode emitter array 6 fabricated on it are insulated and fixed together by an insulator 7. The insulator 7 is a ceramic sheet with a height of 300 μm. Next, the device is placed in a vacuum chamber or vacuum-sealed, maintaining a vacuum gap between the anode substrate and the cold cathode array substrate. The vacuum level of this gap is 10. -5 Pa.

[0054] Example 2:

[0055] The difference between this embodiment and Embodiment 1 lies in the structure and fabrication of the anode substrate, such as... Figures 4 to 6 As shown, this embodiment is an imageable nanowire anode vacuum infrared detector. Specifically, it includes a cold cathode lattice substrate and an anode substrate. The cold cathode lattice substrate is a ZnO nanowire lattice cathode substrate, while the anode substrate is a vertically aligned, addressable, infrared-sensitive CuO nanowire lattice anode substrate.

[0056] The ZnO nanowire lattice cathode substrate includes a cathode substrate 3, a cathode electrode layer 4, a cathode thin film lattice 5, and a cathode emitter lattice 6. The cathode substrate 3 is a transparent component. Specifically, in this embodiment, the cathode substrate 3 is made of transparent glass. The cathode electrode layer 4 is disposed on the cathode substrate 3, the cathode thin film lattice 5 is disposed on the cathode electrode layer 4, and the cathode emitter lattice 6 is disposed on the cathode thin film lattice 5.

[0057] The addressable CuO nanowire lattice anode substrate includes a high-voltage TFT and a nanowire array anode, with the high-voltage TFT and nanowire array anode arranged in parallel on the anode substrate.

[0058] The structural section drawing is the fabrication flowchart. Figure 5 The diagram is divided into two parts, front and back. The basic anode structure includes a second anode electrode layer 19, an anode growth source film 20, an anode nanowire array 21, a gate electrode 12, a source electrode 15, a drain electrode 16, a gate insulating layer 13, an active layer 14, a passivation layer 17, a drain structure 22, and an etched via 18.

[0059] The high-voltage TFT adopts a square structure, with its gate electrode 12, source electrode 15, and drain electrode 16 all being square. A bias drain structure 22 is provided between the gate electrode 12 and the drain electrode 16, as shown in [reference needed]. Figure 5 Before c. The anode nanowire array 21 is grown vertically above the extension region of the drain electrode 16, and the second anode electrode layer 19 connects the anode nanowire array 21 and the drain electrode 16 through etched vias 18. The anode voltage of the nanowires can be controlled by adjusting the voltage of the gate electrode 12, thereby achieving addressability.

[0060] Its preparation process is as follows:

[0061] Preparation of S1 and ZnO nanowire lattice cathode substrate: Prepare a glass cathode substrate 3 with an area of ​​2.5cm×3cm and a thickness of 3mm. Prepare vent holes 2 on the cathode substrate 3. Use acetone, ethanol and deionized water for ultrasonic cleaning respectively. Finally, blow dry with a nitrogen gun.

[0062] ITO electrodes were deposited on the cathode substrate 3 as the cathode electrode layer 4 using magnetron sputtering vacuum deposition technology. The ITO deposition power was 1.27 kW, the deposition time was 35 min, and the film thickness was 500 μm. Square Zn cathode film lattices 5 were prepared on the ITO film using photolithography and electron beam evaporation technology. The square lattice had a side length of 100 μm and the spacing between the lattices was 100 μm. ZnO nanowire cathode emitter lattice 6 was grown on the cathode film lattice 5 using thermal oxidation method. The oxidation temperature was 470 °C and the oxidation time was 3 h.

[0063] S2. Fabrication of an addressable infrared-sensitive CuO nanowire lattice anode substrate: Prepare a glass anode substrate 11 with an area of ​​2.5cm × 3cm and a thickness of 3mm. Clean the anode substrate 11 ultrasonically with acetone, ethanol, and pure water for 15 minutes each, and then dry it with a nitrogen gun. Fabricate a gate electrode 12 on the anode substrate 11 using DC magnetron sputtering, ultraviolet lithography, and wet etching. The electrode thickness is approximately 200nm. Deposit a gate insulating layer 13 of SiO2 with a thickness of approximately 300nm on top of the gate electrode 12 using plasma-enhanced chemical vapor deposition. An active layer 14 of a-IGZO with a thickness of approximately 50 nm was prepared using radio frequency magnetron sputtering, ultraviolet lithography, and wet etching. A source electrode 15, a drain electrode 16, and an extension region of the drain electrode 16 with a thickness of approximately 200 nm were fabricated on top of the active layer 14 using DC magnetron sputtering, ultraviolet lithography, and wet etching. A passivation layer 17 of SiO2 with a thickness of approximately 300 nm was prepared on top of the electrodes using plasma-enhanced chemical vapor deposition. Etched vias 18 connecting the second anode electrode layer 19 and the drain electrode 16 were fabricated on the passivation layer 17 using reactive ion etching. An ITO second anode electrode layer 19 with a thickness of approximately 300 nm was fabricated on top of the passivation layer 17 using ultraviolet lithography and magnetron sputtering. A Cu film for fabricating the anode growth source film 20 of CuO nanowires was fabricated on top of the second anode electrode layer 19 using ultraviolet lithography and electron beam evaporation. The glass substrate with the above structure was placed in a tube furnace and thermally oxidized in the atmosphere to prepare an anode nanowire array 21 of CuO nanowire array. The oxidation temperature was 430℃ and the holding time was 6h.

[0064] S3. Fabrication of an imageable nanowire anode vacuum infrared detector: One side of the anode substrate, which is a CuO nanowire array 21, and the other side of the cold cathode lattice substrate, which has a cathode emitter lattice 6, are fixed together by an insulator 7, which is a ceramic sheet with a height of 100 μm. Next, the device is placed in a vacuum chamber or vacuum-sealed, maintaining a vacuum gap between the anode substrate and the cold cathode lattice substrate. The vacuum level of this gap is 10⁻⁶. - 5 Pa.

[0065] Utilizing the characteristics of vacuum diodes, these devices can operate under high voltage and effectively reduce dark current while improving current gain. Simultaneously, due to vacuum encapsulation, external radiation interference does not affect the device's operation. When infrared light illuminates the infrared-sensitive photoelectric material nanowires at the anode, a large number of electron-hole pairs appear within the nanowires due to the EBIPC effect. Furthermore, because the nanowires are dimensionally limited, electrons move only in one dimension, resulting in a significantly improved conductivity compared to thin-film materials. This further enhances the photocurrent and improves the device's detection sensitivity. When an addressable anode substrate is used, the device can achieve imaging capabilities.

[0066] The preferred embodiments of the present invention have been described in detail above, but the present invention is not limited to the embodiments described. Those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present invention, and these equivalent modifications or substitutions are all included within the scope defined by the claims of this application.

Claims

1. A nanowire anode vacuum infrared detector, characterized in that: It includes: Cold cathode lattice substrate and anode substrate; The cold cathode lattice substrate includes a transparent cathode substrate (3), a cathode electrode layer (4) on the cathode substrate (3), a cathode thin film lattice (5) on the cathode electrode layer (4), and a cathode emitter lattice (6) on the cathode thin film lattice (5) arranged sequentially from the outside to the inside. The anode substrate includes a transparent anode substrate (11) arranged from the outside to the inside, a first anode electrode layer (10) on the anode substrate (11), an anode growth source film (9) on the first anode electrode layer (10), and an anode nanowire film (8) on the anode growth source film (9). The cold cathode lattice substrate and the anode substrate are fixed in parallel by a high-voltage insulating isolator (7), and a vacuum gap is left between the cold cathode lattice substrate and the anode substrate.

2. The nanowire anode vacuum infrared detector according to claim 1, characterized in that: An exhaust hole (2) is provided on the cathode substrate (3).

3. The nanowire anode vacuum infrared detector according to claim 1, characterized in that: The cathode electrode layer (4) is a transparent conductive film; the first anode electrode layer (10) is a conductive film, which includes Cr, Ni, Ti metal films or ITO conductive films.

4. The nanowire anode vacuum infrared detector according to claim 1, characterized in that: The isolator (7) is made of ceramic and quartz insulating materials, and the height of the isolator (7) is 100~500 μm. The vacuum degree of the vacuum gap is 10. -7 ~ 10 -3 Pa.

5. The nanowire anode vacuum infrared detector according to claim 1, characterized in that: The cathode emitter array (6) is a cathode electron source array capable of emitting electrons. The cathode emitter array (6) includes zinc oxide nanowires, tungsten oxide nanowires, copper oxide nanowires, carbon nanotubes, or quasi-one-dimensional metal oxide semiconductor nanowires modified with thermoelectric materials.

6. The nanowire anode vacuum infrared detector according to claim 1, characterized in that: The anode nanowire film (8) is an infrared-sensitive optoelectronic material nanowire.

7. The nanowire anode vacuum infrared detector according to claim 6, characterized in that: The infrared-sensitive optoelectronic nanowires include Si nanowires, Ge nanowires, GaAs nanowires, GaSb nanowires, InSb nanowires, InP nanowires, InAs nanowires, SnSe nanowires, SnS nanowires, or CuO nanowires.

8. The nanowire anode vacuum infrared detector according to claim 1, characterized in that: The anode substrate is replaced with an addressable anode substrate, which includes a transparent anode substrate (11), a high-voltage TFT and a nanowire array anode arranged in parallel on the anode substrate (11). The high-voltage TFT includes a gate electrode (12), a source electrode (15), and a drain electrode (16). The nanowire array anode includes a second anode electrode layer (19), an anode growth source film (20), and an anode nanowire array (21). The gate electrode (12) is located on the anode substrate (11). A gate insulating layer (13) is provided on the gate electrode (12) and the anode substrate (11). An active layer (14) is provided on the layer (13) above the gate electrode (12). The source electrode (15) and the drain electrode (16) are located on the gate insulating layer (13). A passivation layer (17) is provided on the source electrode (15), the drain electrode (16) and the active layer (14). A bias drain structure (22) exists between the gate electrode (12) and the drain electrode (16). An anode nanowire array (21) is vertically grown above the extension region of the drain electrode (16). The second anode electrode layer (19) connects the anode nanowire array (21) and the drain electrode (16) through an etched via (18).

9. A method for manufacturing a nanowire anode vacuum infrared detector as described in any one of claims 1 to 7, characterized in that: The specific steps are as follows: S1. Prepare a cold cathode matrix substrate, clean the cathode substrate (3), and deposit an ITO electrode as a cathode electrode layer (4) on the cathode substrate (3) using magnetron sputtering vacuum deposition technology. The ITO deposition power is 1.27 kW, the deposition time is 35 min, and the film thickness is 500 μm. A square cathode thin film matrix (5) is prepared on the ITO thin film using photolithography and electron beam evaporation technology. The square matrix has a side length of 100 μm and a spacing of 100 μm between the matrixes. A cathode emitter lattice (6) was grown on the cathode thin film lattice (5) using a thermal oxidation method. The area of ​​the cathode emitter lattice (6) distribution region was 1 cm². 2 ; S2. Prepare an anode substrate, manufacture an anode substrate (11) of a set size, and clean the anode substrate (11). Use magnetron sputtering vacuum deposition technology to deposit a conductive electrode on the anode substrate (11) as the first anode electrode layer (10). Prepare an anode growth source film (9) of a set size, and clean the anode substrate (11) with the above structure to prepare an anode nanowire film. S3. The anode substrate and the cold cathode matrix substrate are insulated and fixed together by the separator (7), and the vacuum gap between the anode substrate and the cold cathode matrix substrate is vacuum sealed.

10. A method for manufacturing the nanowire anode vacuum infrared detector as described in claim 8, characterized in that: The fabrication steps of the addressable anode substrate are as follows: An anode substrate (11) of a predetermined size is fabricated and cleaned. A gate electrode (12) with a thickness of 200 nm is fabricated on the anode substrate (11). A gate insulating layer (13) with a thickness of 300 nm is deposited above the gate electrode (12) using plasma-enhanced chemical vapor deposition. An active layer (14) with a thickness of 50 nm is fabricated above the gate insulating layer (13). A source electrode (15), a drain electrode (16), and an extension region of the drain electrode (16) with a thickness of 200 nm are fabricated above the active layer (14). A passivation layer (17) with a thickness of 300 nm is fabricated above the electrodes using plasma-enhanced chemical vapor deposition. An etched via (18) is fabricated on the passivation layer (17) using reactive ion etching. A second anode electrode layer (19) with a thickness of 300 nm is fabricated above the passivation layer (17) using ultraviolet lithography and magnetron sputtering. nm, using ultraviolet lithography and electron beam evaporation to fabricate an anode growth source film (20) above the second anode electrode layer (19); and to prepare an anode nanowire array (21). The other steps are the same as S1 and S3 of claim 9.

Images