Apparatus and method for processing a substrate

Abstract

The present invention relates to an apparatus and a method for processing a substrate. The inventive concept provides a substrate processing apparatus. The substrate processing apparatus includes a housing, a support unit positioned within the housing and configured to support a substrate, a liquid supply unit configured to supply a processing liquid to the substrate supported on the support unit, and a laser module configured to irradiate a laser to the substrate supplied with the processing liquid, and a vision module for monitoring a point of the laser irradiation in the substrate.

Description

[0001] Cross-references to related applications

[0002] This application claims priority and benefit to Korean Patent Application No. 10-2021-0189930, filed with the Korean Intellectual Property Office on December 28, 2021, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The embodiments of the inventive concept described herein relate to a substrate processing apparatus and a substrate processing method. Background Technology

[0004] To manufacture semiconductor devices, various processes are performed on substrates such as wafers, including photolithography, etching, ashing, ion implantation, and thin-film deposition. Various processing solutions and gases are used in each process. Additionally, a drying process is performed on the substrate to remove the processing solutions used to process the substrate.

[0005] Photolithography processes used to form patterns on wafers include exposure processes. An exposure process is a pre-executed operation used to cut semiconductor integrated material adhered to a wafer into a desired pattern. Exposure processes can have various purposes, such as forming patterns for etching and forming patterns for ion implantation. In an exposure process, a pattern is drawn onto the wafer using light through a mask (which acts as a "frame"). When light is exposed to the semiconductor integrated material on the wafer (e.g., photoresist on the wafer), the chemical properties of the photoresist change according to the pattern formed by the light and the mask. Patterning is formed on the wafer when a developer is supplied to the photoresist, whose chemical properties have been changed according to the pattern.

[0006] To perform the exposure process accurately, the pattern formed on the mask must be precisely fabricated. To confirm that the pattern is formed in the desired form and accurately, the operator uses inspection equipment such as a scanning electron microscope (SEM) to examine the formed pattern. However, a large number of patterns are formed on a single mask. This means that a significant amount of time is spent inspecting all the numerous patterns required to inspect a single mask.

[0007] Accordingly, a monitoring pattern capable of representing a group of patterns comprising multiple patterns is formed on the mask. Furthermore, an anchor pattern capable of representing a group of patterns is formed on the mask. The operator can estimate the quality of the patterns formed on the mask by inspecting the anchor pattern. Additionally, the operator can estimate the quality of the patterns included in a group of patterns by inspecting the monitoring pattern.

[0008] As described above, the monitoring and anchoring patterns formed on the mask allow operators to effectively reduce the time required for mask inspection. However, to improve the accuracy of mask inspection, it is preferable that the critical dimensions of the monitoring and anchoring patterns are the same.

[0009] When etching is performed to make the critical dimensions of the monitoring pattern and the anchor pattern equal, over-etching may occur at the pattern. For example, the difference between the etching rate of the critical dimension of the monitoring pattern and the etching rate of the anchor pattern may occur multiple times, and over-etching may occur at the critical dimensions of the monitoring pattern and the anchor pattern during repeated etching of the monitoring pattern and / or the anchor pattern to reduce this difference. When the etching process is performed precisely to minimize the occurrence of this over-etching, the etching process takes a significant amount of time. Accordingly, an additional critical dimension correction process is performed to precisely correct the critical dimensions of the pattern formed on the mask.

[0010] Figure 1 This paper demonstrates the normal distribution of the first critical dimension CDP1 and the second critical dimension CDP2 (critical dimensions of the anchoring pattern) of the mask monitoring pattern before performing the critical dimension correction process (the final step in the mask manufacturing process). Furthermore, the sizes of the first critical dimension CDP1 and the second critical dimension CDP2 are smaller than the target critical dimension. And, before performing the critical dimension correction process, as... Figure 1 As shown, there is an intentional deviation between the critical dimension (CD) of the monitoring pattern and the anchor pattern. Furthermore, the critical dimensions of the two patterns are made identical by additionally etching the anchor pattern during the critical dimension correction process.

[0011] In the critical dimension correction process, etching chemicals are supplied to the substrate to make the first critical dimension CDP1 and the second critical dimension CDP2 reach the target critical dimensions. However, if the etching chemicals are supplied uniformly to the substrate, even if either the first critical dimension CDP1 or the second critical dimension CDP2 can reach the target critical dimension, the other is unlikely to reach the target critical dimension. Furthermore, the deviation between the first critical dimension CDP1 and the second critical dimension CDP2 is not reduced.

[0012] Accordingly, etching chemicals are supplied to the substrate, and an anchoring pattern is formed in the substrate where the etching chemicals are supplied using a laser for localized heating. By locally irradiating the anchoring pattern area with laser light, the temperature of a localized portion of the substrate surface rises, and if the temperature reaches or approaches the boiling point of the chemicals, bubbles are generated due to the evaporation of the chemicals. The amount of bubbles generated increases with the duration of localized heating. The bubbles generated on the substrate surface prevent the substrate surface from contacting the chemicals; therefore, the problem arises that etching may not be performed or the etching degree may deteriorate. In this case, the anchoring pattern cannot guarantee the first critical dimension CDP1, which is the target. Summary of the Invention

[0013] The present invention provides a substrate processing apparatus and a substrate processing method for effectively processing substrates.

[0014] The present invention provides a substrate processing apparatus and a substrate processing method for making the critical dimensions of patterns formed on a substrate uniform.

[0015] The present invention provides a substrate processing apparatus and a substrate processing method for preventing reduced etching efficiency due to abnormally grown bubbles during the process of irradiating a local area of ​​a substrate with a laser.

[0016] The technical objectives of this invention are not limited to those described above, and other unmentioned technical objectives will become apparent to those skilled in the art from the following description.

[0017] The present invention provides a substrate processing apparatus. The substrate processing apparatus includes: a housing; a support unit positioned within the housing and configured to support a substrate; a liquid supply unit configured to supply processing liquid to the substrate supported on the support unit; a laser module configured to irradiate the substrate supplied with the processing liquid with a laser; and a vision module for monitoring the laser-irradiated point on the substrate.

[0018] In the implementation scheme, the laser beam irradiated from the laser module and the imaging axis of the vision module are set to be coaxial.

[0019] In one embodiment, the substrate processing apparatus includes an illumination module that provides illumination to the laser-irradiated point in the substrate, wherein the illumination axis of the illumination module and the imaging axis of the vision module are arranged to be coaxial.

[0020] In one embodiment, the substrate processing apparatus further includes an illumination module that provides illumination to the laser-irradiated point on the substrate, wherein the laser module and the vision module are disposed on the same plane, and the illumination module is disposed below the vision module.

[0021] In one embodiment, the substrate processing apparatus further includes a body in which the laser module, the vision module, and the illumination module are disposed, wherein an irradiation end is disposed on the body, and the laser of the laser module irradiates the substrate coaxially with the imaging axis of the vision module, and the illumination axis of the illumination module is configured to be parallel to the imaging axis of the vision module.

[0022] In one implementation, the vision module monitors whether bubbles have been generated and whether the size of the bubbles has increased during the process of heating the processing liquid applied to the substrate by the laser.

[0023] In one embodiment, the substrate processing apparatus further includes a controller for controlling the substrate processing apparatus, wherein a determination is made as to whether the process being performed on the substrate can be terminated by comparing a reference image of the substrate obtained from the vision module with a substrate image of the substrate with bubbles generated obtained from the vision module.

[0024] In an implementation, if the amount of variation between the reference image and the substrate image is determined to be 10% or less, the controller continues the process being performed on the substrate.

[0025] In one implementation, if the amount of change between the reference image and the substrate image is determined to be 10% or higher, the controller terminates the process being performed on the substrate.

[0026] In one implementation, if the process being performed on the substrate is terminated, the controller changes the process conditions for the substrate to be processed later, and the controller controls the laser module to change the output conditions of the laser or change the irradiation range of the laser.

[0027] In one embodiment, the substrate includes a first pattern and a second pattern formed at a location different from the first pattern, and wherein the laser module irradiates either the first pattern or the second pattern with a laser.

[0028] In one embodiment, the substrate includes a first pattern and a second pattern, the first pattern having a first critical size, the second pattern being formed at a different location from the first pattern and having a second critical size smaller than the first critical size, and wherein the laser module irradiates the second pattern with a laser, such that the first critical size and the second critical size become the same.

[0029] The present invention provides a substrate processing method. The substrate processing method includes: placing a substrate having a first pattern and a second pattern, the second pattern being formed at a different location from the first pattern; correcting a critical dimension of the first pattern or a critical dimension of the second pattern; supplying a rinsing solution to the substrate; and removing the substrate, wherein, during the correction of the critical dimension, a vision module detects whether bubbles have been generated, and if bubbles are detected, a critical dimension correction process is determined by comparing an image of the substrate with the generated bubbles with a reference image.

[0030] In one embodiment, when correcting the critical dimension, the processing liquid is supplied to the substrate, a laser module irradiates the substrate to heat the substrate on which the processing liquid is applied, and the laser module irradiates the second pattern with the laser.

[0031] In one implementation, the reference image is acquired by the vision module, which acquires the reference image by means of an image of the state of the substrate illuminated by the laser through the laser module.

[0032] In one implementation, if the difference between the substrate image that produces the bubble and the reference image is 10% or less, the critical dimension correction process for the substrate continues.

[0033] In one implementation, if the difference between the substrate image that produces the bubble and the reference image is 10% or higher, the critical dimension correction process for the substrate is terminated.

[0034] In the implementation scheme, an alarm is generated if the change value is 10% or higher; and if the alarm is generated, the laser module is shut down.

[0035] In the implementation, if the change value is determined to be 10% or higher and the critical size correction process is terminated, the process conditions for the substrate to be post-processed are reset.

[0036] In the implementation plan, the vision module monitors in real time whether bubbles are generated, or whether bubbles are generated at predetermined time intervals.

[0037] This invention provides a substrate processing apparatus. The substrate processing apparatus includes: a housing; a support unit positioned within the housing and configured to support a substrate; a liquid supply unit configured to supply processing liquid to the substrate supported on the support unit; a heating unit configured to heat the substrate supplied with the processing liquid; and a controller. The heating unit includes: a body with an irradiation end disposed thereon; a laser module disposed within the body and irradiating the substrate with laser light to heat the substrate; and a vision module disposed within the body for monitoring... The controller determines whether a bubble is generated at the laser-irradiated point, and the vision module is coaxial with the laser module; and an illumination module is disposed within the body and provides illumination to the laser-irradiated point, and the illumination module is coaxial with the vision module, wherein the vision module immediately acquires a reference image of the substrate after the laser is turned on at the laser module, and if a bubble is generated, it acquires an image of the substrate where the bubble is generated, and the controller determines whether to continue the process by comparing the reference image and the image of the substrate where the bubble is generated, and terminates the process if the comparison value is 10% or higher.

[0038] According to the embodiments of the present invention, the substrate can be processed effectively.

[0039] According to the embodiments conceived in this invention, the critical dimensions of patterns formed on a substrate can be made consistent.

[0040] According to the embodiments of the present invention, the reduction in etching efficiency caused by abnormally grown bubbles during the process of irradiating a local area of ​​the substrate with a laser can be prevented.

[0041] The effects of this invention are not limited to those described above, and other effects not mentioned will become apparent to those skilled in the art from the following description. Attached Figure Description

[0042] The above and other objects and features will become apparent from the following description with reference to the accompanying drawings, wherein, unless otherwise stated, the same reference numerals refer to the same parts throughout the drawings, and in the drawings:

[0043] Figure 1 The normal distribution of the critical dimensions of the monitoring pattern and the anchoring pattern is shown.

[0044] Figure 2 A plan view of a substrate processing apparatus according to an embodiment of the present invention is shown schematically.

[0045] Figure 3 It schematically shows that in Figure 2The state of the substrate being processed in the liquid processing chamber.

[0046] Figure 4 schematically shown Figure 2 Implementation scheme for the liquid handling chamber.

[0047] Figure 5 for Figure 4 A top view of the liquid handling chamber.

[0048] Figure 6 for Figure 4 A side view cross-sectional view of the heating unit.

[0049] Figure 7 for Figure 4 A plan view of the heating unit.

[0050] Figure 8 The illustration shows the setting. Figure 4 The heating unit contains a laser module, a vision module, an illumination module, and optical components.

[0051] Figure 9 This is a flowchart of a substrate processing method according to an embodiment of the present invention.

[0052] Figure 10 To demonstrate Figure 9 The flowchart shows the critical dimension correction steps.

[0053] Figure 11 Demonstrated execution Figure 10 The state of the substrate processing apparatus in the process of supplying the processing liquid.

[0054] Figure 12 Demonstrated execution Figure 10 The substrate processing apparatus for acquiring reference images.

[0055] Figure 13 Shown in Figure 12 An implementation scheme for the reference image obtained in the process.

[0056] Figure 14 Demonstrated execution Figure 10 The state of the substrate processing apparatus during the heat treatment step.

[0057] Figure 15 An implementation scheme for a substrate image is shown, wherein if in Figure 14 If bubbles are generated during the heating process, then bubbles will be generated and captured by the vision module.

[0058] Figure 16 Demonstrated execution Figure 9 A substrate processing apparatus for the rinsing step. Detailed Implementation

[0059] The inventive concept can be modified in various ways and can take many forms, and its specific embodiments will be shown and described in detail in the accompanying drawings. However, embodiments of the inventive concept are not intended to limit the specific forms disclosed, and it should be understood that the inventive concept includes all variations, equivalents, and substitutions contained within the spirit and technical scope of the inventive concept. In the description of the inventive concept, detailed descriptions of relevant known technologies may be omitted when the essence of the inventive concept may be unclear.

[0060] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the inventive concept. As used herein, the singular forms “a,” “an,” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the terms “comprise,” “comprising,” “include,” and / or “including,” when used in this specification, designate the presence of stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Furthermore, the term “example” is intended to refer to an example or illustration.

[0061] It should be understood that although the terms "first," "second," "third," etc., may be used herein to describe various elements, components, regions, layers, and / or sections, these elements, components, regions, layers, and / or sections should not be limited by these terms. These terms are used only to distinguish one element, component, region, layer, and / or section from another region, layer, and / or section. Therefore, without departing from the teachings of the inventive concept, the first element, first component, first region, first layer, or first section discussed below may be referred to as a second element, second component, second region, second layer, or second section.

[0062] It should be understood that when a component or layer is referred to as "on another component or layer," "connected to," "attached to," or "covering" another component or layer, that component or layer may be directly on, connected to, attached to, or cover that other component or layer, or there may be intermediate components or layers. Conversely, when a component is referred to as "directly on another component or layer," "directly connected to," or "directly attached to" another component or layer, there may be no intermediate components or layers. Other terms (such as "between," "adjacent," or "nearby") should be interpreted in the same manner.

[0063] Unless otherwise defined, all terms used herein (including technical or scientific terms) shall have the same meaning as commonly accepted by one of ordinary skill in the art to which the inventive concept pertains. Unless expressly defined in this application, terms such as those defined in common dictionaries shall be interpreted as consistent with the content of the relevant art, rather than as ideal or overly formal.

[0064] In the following text, reference will be made to Figures 2 to 16 The embodiments of the present invention are described in detail.

[0065] Figure 2 A plan view of a substrate processing apparatus according to an embodiment of the present invention is shown schematically. (Refer to...) Figure 2 The substrate processing device 1 may include an index module 10, a processing module 20, and a controller 30.

[0066] According to the implementation plan, when viewed from above, the index module 10 and the processing module 20 can be positioned along one direction.

[0067] In the following text, the direction of setting the index module 10 and the processing module 20 is defined as the first direction X, the direction perpendicular to the first direction X when viewed from the front is defined as the second direction Y, and the direction perpendicular to the plane including both the first direction X and the second direction Y is defined as the third direction Z.

[0068] The index module 10 can transfer the substrate M from the container F containing the substrate M to the processing module 20 for processing the substrate M. The index module 10 can store the substrate M, which has undergone predetermined processing at the processing module 20, in the container F. The longitudinal direction of the index module 10 can be formed in the second direction Y. The index module 10 can have a loading port 12 and an index frame 14.

[0069] A container F for accommodating the substrate M can be mounted on the loading port 12. The loading port 12 can be positioned on the opposite side of the processing module 20 relative to the index frame 14. Multiple loading ports 12 can be provided, and the multiple loading ports 12 can be arranged in a line along the second direction Y. The number of loading ports 12 can be increased or decreased depending on the processing efficiency of the processing module 20 and the available floor space.

[0070] A sealed container such as a front-open unified pod (FOUP) can be used as container F. Container F can be transported by means of a conveying device (not shown) such as an overhead conveyor, overhead transport vehicle, or automated guided vehicle, or placed on loading port 12 by an operator.

[0071] The index frame 14 provides a transport space for transferring the substrate M. An indexing robot 120 and an indexing track 124 can be disposed at the index frame 14. The indexing robot 120 can transfer the substrate M. The indexing robot 120 can transfer the substrate M between the indexing module 10 and the buffer unit 200, which will be described later. The indexing robot 120 includes an indexing hand 122. The substrate M can be placed on the indexing hand 122. When transferring the substrate M, the indexing hand 122 can grip or support the substrate M. The indexing hand 122 can be configured to be movable forward and backward, rotatable about a third direction Z, and movable along a third direction Z. Multiple indexing hands 122 can be provided. Each of the multiple indexing hands 122 can be configured to be spaced apart from each other in the vertical direction. The multiple indexing hands 122 can be moved forward and backward independently of each other.

[0072] Index track 124 is disposed within index frame 14. Index track 124 can be configured such that its longitudinal direction corresponds to the longitudinal direction of index frame 14. Index track 124 can also be configured such that its longitudinal direction is along a second direction Y. Index robot 120 can be placed on index track 124 and can move along index track 124. Index robot 120 can be configured to move linearly along index track 124.

[0073] The controller 30 can control the substrate processing apparatus 1. The controller may include a process controller comprising: a microprocessor (computer) that performs control of the substrate processing apparatus 1; a user interface, such as a keyboard, through which an operator inputs commands to manage the substrate processing apparatus; a display showing the operating status of the substrate processing apparatus 1; and a memory unit that stores a processing scheme (i.e., a control program) for executing the processing technology of the substrate processing apparatus 1 by controlling the process controller based on data and process conditions, or stores programs for executing components of the substrate processing apparatus 1. Furthermore, the user interface and the memory unit may be connected to the process controller. The processing scheme may be stored in a storage medium of the memory unit, and the storage medium may be a hard disk, a portable disk (such as a CD-ROM or DVD), or a semiconductor memory (such as flash memory).

[0074] The controller can control the substrate processing apparatus 1 and / or the liquid processing chamber 400, thereby enabling the execution of the substrate processing method described later. For example, the controller 30 can control the configuration disposed in the liquid processing chamber 400 to execute the substrate processing method described later.

[0075] Processing module 20 may include a buffer unit 200, a transfer frame 300, and a liquid processing chamber 400. The buffer unit 200 provides space in which substrates M placed into and removed from processing module 20 are temporarily held. The transfer frame 300 provides space for transferring substrates M between the buffer unit 200 and the liquid processing chamber 400. The liquid processing chamber 400 can perform a liquid processing process of supplying liquid to substrates M. Processing module 20 may also include a drying chamber, which can perform a drying process of drying the liquid-processed substrates M.

[0076] A buffer unit 200 can be disposed between the index frame 14 and the transfer frame 300. The buffer unit 200 can be positioned at the end of the transfer frame 300. The buffer unit 200 can store multiple substrates therein. A slot (not shown) for placing substrates M can be provided inside the buffer unit 200. Multiple slots (not shown) can be provided. The multiple slots (not shown) can be spaced apart from each other in the third direction Z. Accordingly, the multiple substrates M stored in the buffer unit 200 can be spaced apart from each other in the third direction Z.

[0077] The front and back of the buffer unit 200 can be open. The front is the surface facing the index module 10, and the back is the surface facing the transfer frame 300. The indexing robot 120 can access the buffer unit 200 through the front, and the transfer robot 320, which will be described below, can access the buffer unit 200 through the back.

[0078] The conveying frame 300 may have a longitudinal direction arranged along a first direction X. Liquid processing chambers 400 may be disposed on both sides of the conveying frame 300. Liquid processing chamber 400 and drying chamber 500 may be disposed on one side of the conveying frame 300. The conveying frame 300 and liquid processing chamber 400 may be arranged along a second direction Y. The conveying frame 300 and drying chamber 500 may be arranged along the second direction Y. On one or each side of the conveying frame 300, the liquid processing chamber 400 may be arranged along the first direction X and a third direction Z in an arrangement of A×B (where A and B are natural numbers greater than 1 or 1, respectively). On the other side of the conveying frame 300, the drying chamber may be arranged along the first direction X and a third direction Z in an arrangement of A×B (where A and B are natural numbers greater than 1 or 1, respectively).

[0079] The transfer frame 300 may include a transfer robot 320 and a transfer track 342. The transfer robot 320 transfers a substrate M. The transfer robot 320 can transfer the substrate M between the buffer unit 200 and the liquid processing chamber 400. Furthermore, the transfer robot 320 can transfer the substrate M between the buffer unit 200, the liquid processing chamber 400, and the drying chamber. The transfer robot 320 may include a transfer hand 322 on which the substrate M is placed. The substrate M can be placed on the transfer hand 322. The transfer hand 322 may be configured to be movable forward and backward, rotatable about a third direction Z, and movable along the third direction Z. Multiple hands 322 are configured to be spaced apart from each other in the vertical direction, and the multiple hands 322 can move forward and backward independently of each other.

[0080] The conveyor track 324 can be disposed within the conveyor frame 300 along its longitudinal direction. In an embodiment, the longitudinal direction of the conveyor track 324 can be disposed along a first direction X. A conveyor robot 320 can be placed on the conveyor track 324, and the conveyor robot 320 can move on the conveyor track 340.

[0081] Figure 3 It schematically shows that in Figure 2 The state of the substrate being processed in the liquid processing chamber. In the following text, reference will be made to... Figure 3 A substrate M is shown being processed in a liquid processing chamber 400 according to an embodiment of the present invention.

[0082] Reference Figure 3 The object to be processed in the liquid processing chamber 400 can be any of a wafer, glass, and a photomask. For example, in an embodiment of the present invention, the substrate M processed in the liquid processing chamber 400 can be a photomask (which is a “frame” used in the exposure process).

[0083] The substrate M may be rectangular. The substrate M may be a photomask, serving as a "frame" used in the exposure process. At least one reference mark AK may be marked on the substrate M. For example, multiple reference marks AK may be formed in each corner region of the substrate M. The reference mark AK may be a mark called an alignment key used when aligning the substrate M. Furthermore, the reference mark AK may be a mark used to derive the position of the substrate M. For example, the vision module 470, described later, can acquire an image by imaging the reference mark AK and send the acquired image to the controller 30. The controller 30 then analyzes the image including the reference mark AK to detect the precise position of the substrate M. Additionally, the reference mark AK can be used to determine the position of the substrate M during transport.

[0084] Cells CE can be formed on a substrate M. At least one cell CE can be formed, for example, multiple cells CE. Multiple patterns can be formed at each cell CE. The patterns formed at each cell CE can be defined as a pattern group. The pattern formed at the cell CE can include an exposure pattern EP and a first pattern P1. The exposure pattern EP can be used to form an actual pattern on the substrate M. The first pattern P1 can be disposed within the cell CE. The first pattern P1 can be a single cell representative pattern representing the exposure pattern EP in a cell CE. Furthermore, when multiple cells CE are provided, a first pattern is provided in each cell, thereby providing multiple first patterns P1. Multiple first patterns P1 can be formed in one cell CE. The first pattern P1 can have a form in which multiple portions of each exposure pattern EP are combined. The first pattern P1 can be referred to as a monitoring pattern. Furthermore, the first pattern P1 can be referred to as a critical dimension monitoring macro.

[0085] When an operator examines the first pattern P1 using a scanning electron microscope (SEM), they can estimate whether the form of the exposure pattern EP formed in a cell CE is good or bad. Furthermore, the first pattern P1 can be used as an inspection pattern to inspect the exposure pattern EP. Moreover, the first pattern P1 can be any of the exposure patterns EP used in the actual exposure process. In addition, the first pattern P1 can be used not only as an inspection pattern for inspecting exposure patterns but also as an exposure pattern used in actual exposure.

[0086] The second pattern P2 can be a representative pattern of the entire cell of the exposure pattern EP on the entire cell of the substrate M. For example, the second pattern P2 can be in the form of multiple portions of each of the first patterns in the first pattern P1 being combined.

[0087] When an operator inspects the second pattern P2 using a scanning electron microscope (SEM), they can estimate whether the form of the exposure pattern EP formed on a substrate M is good or bad. Furthermore, the second pattern P2 can be used as an inspection pattern. Additionally, the second pattern P2 can be an inspection pattern not used in the actual exposure process. The second pattern P2 can also be referred to as an anchoring pattern.

[0088] The substrate processing apparatus disposed in the liquid processing chamber 400 will be described in detail below. As an example, the processing procedure performed in the liquid processing chamber 400 during the execution of a fine critical dimension correction (FCC) process, which is the final step in the process of manufacturing a mask for the exposure process, will be described below.

[0089] The substrate M to be placed in the liquid processing chamber 400 and processed therein can be a substrate M that has already undergone pretreatment. The critical dimensions of the first pattern P1 and the second pattern P2 of the substrate M to be placed in the liquid processing chamber 400 can be different from each other. The first pattern P1 can have a critical dimension of a first width, and the second pattern P2 can have a critical dimension of a second width. For example, the first pattern can be larger than the second pattern. For example, the first width can be 69 nm, and the second width can be 68.5 nm.

[0090] Figure 4 schematically shown Figure 2 The implementation scheme of the liquid handling chamber, and Figure 5 for Figure 4 A top view of the liquid handling chamber.

[0091] Reference Figure 4 and Figure 5 The liquid handling chamber 400 may include a housing 410.

[0092] The housing (not shown) may have an internal space 412. The housing 410 may include a bowl-shaped portion 430, which will be described later, located within the internal space 412. A liquid supply unit 440 and a heating unit 450, which will be described later, may be disposed within the internal space of the housing 410. The housing 410 may be provided with an inlet (not shown) through which the substrate M can be inserted and removed. This inlet can be selectively opened or closed via a door (not shown). The inner wall surface of the housing 410 may be coated with a material highly resistant to chemicals supplied by the liquid supply unit 440.

[0093] A discharge port 414 may be formed on the bottom surface of the housing 410. A discharge line 416 may be connected to the discharge port 414. A discharge component (not shown), capable of discharging into the internal space 412, may be installed at the discharge line 416. Accordingly, pollutants such as fumes or particles generated in the internal space 412 may be discharged to the outside through the discharge port 414.

[0094] according to Figure 4 The liquid processing chamber 400 may include a support unit 420. The support unit 420 can support the substrate M within the processing space 431 of the bowl-shaped portion 430, which will be described later. The support unit 420 can support the substrate M. The support unit 420 can rotate the substrate M.

[0095] The support unit 420 may include a chuck 422, a support shaft 424, a drive member 425, and a support pin 426. The chuck 422 may have a plate shape with a predetermined thickness. The support shaft 424 may be connected to the bottom of the chuck 422. The support shaft 424 may be a hollow shaft. Furthermore, the support shaft 424 may be rotated by the drive member 425. The drive member may be a hollow motor. If the drive member 425 rotates the support shaft 424, the chuck 422 connected to the support shaft 424 may rotate. The base plate M, placed on the support pin 426 mounted on the chuck 422, may rotate together with the rotation of the chuck 422.

[0096] Support pin 426 can support substrate M. Support pin 426 can be mounted at chuck 422. Support pin 426 can protrude from the top surface of chuck 422. When viewed from above, support pin 422 can have a generally circular shape. And, when viewed from above, the portion of support pin 426 corresponding to the edge region of substrate M can be stepped downwards. That is, support pin 426 can include a first surface supporting the bottom of the edge region of substrate M, and a second surface facing the edge region of substrate M, so as to limit the lateral movement of substrate M when substrate M rotates. At least one support pin 422 can be provided. In an embodiment, multiple support pins 422 can be provided. The number of support pins 422 can be set to correspond to the number of edge regions of substrate M having a rectangular shape. Support pin 422 can support substrate M to space the bottom surface of substrate M from the top surface of chuck 422.

[0097] Reference Figure 4 and Figure 5 The liquid handling chamber 400 may include a bowl-shaped portion 430.

[0098] The bowl-shaped portion 430 may have a cylindrical shape with an open top. The bowl-shaped portion 430 may have a processing space 431, and the substrate M may undergo liquid processing and heat treatment in the processing space 431. The bowl-shaped portion 430 can prevent the processing liquid supplied to the substrate M from diffusing into the housing 410, the liquid supply unit 440, and the heating unit 450.

[0099] The bowl-shaped portion 430 may include a bottom portion 433, a vertical portion 434, and an inclined portion 435. The bottom portion 433 may have an opening that, when viewed from above, can be inserted into the support shaft 424. The vertical portion 434 may extend from the bottom portion 433 in a third direction Z. The inclined portion 435 may extend from the top of the vertical portion 434 in the direction of the support unit 420. The inclined portion 435 may extend from the top of the vertical portion 434 into the support unit 420 in an upwardly inclined direction. The inclined portion 435 may extend obliquely toward the substrate M supported on the support unit 420. The bottom portion 433 may have a drain hole 432, formed for draining processing liquid supplied from the liquid supply unit 440 to the outside.

[0100] The bowl-shaped portion 430 can be connected to the lifting member 436. The bowl-shaped portion 430 can change its position along the third direction Z according to the lifting member 436. The lifting member 436 can be a drive device for moving the bowl-shaped portion 430 in the vertical direction. When liquid processing and / or heat treatment are performed on the substrate M, the lifting member 436 can move the bowl-shaped portion 430 in the upward direction. When the substrate M is placed into the internal space or removed from the internal space, the lifting member 436 can move the bowl-shaped portion 430 in the downward direction.

[0101] Reference Figure 4 and Figure 5 The liquid processing chamber 400 may include a liquid supply unit 440. The liquid supply unit 440 can supply liquid to the substrate M. The liquid supply unit 440 can supply a processing solution for liquid processing of the substrate M. The liquid supply unit 440 can supply the processing solution to the substrate M supported by the support unit 420.

[0102] The processing solution can be an etching solution or a rinsing solution. The etching solution can be a chemical. The etching solution can etch patterns formed on the substrate M. The etching solution can also be referred to as an etching liquid. The rinsing solution can clean the substrate M. The rinsing solution can be provided as a known chemical liquid.

[0103] The liquid supply unit 440 may include a nozzle 441, a fixture 442, a rotating shaft 443, and a rotating member 444. The nozzle 441 supplies the processing liquid to the substrate M supported by the support unit 420. One end of the nozzle 441 may be connected to the fixture 442, and the other end may extend in a direction from the fixture 442 toward the substrate M. The nozzle 441 may extend from the fixture 442 along a first direction X. Furthermore, the other end of the nozzle may be cut off at a predetermined angle and may extend toward the substrate M supported on the support unit 420.

[0104] Nozzle 441 may include a first nozzle 441a, a second nozzle 441b, and a third nozzle 441c. Any one of the first nozzle 441a, the second nozzle 441b, or the third nozzle 441c can supply the chemical C in the aforementioned processing liquid to the substrate M. Furthermore, the other nozzle among the first nozzle 441a, the second nozzle 441b, and the third nozzle 441c can supply a different type of chemical C than the chemical C supplied by the other nozzle among the first nozzle 441a, the second nozzle 441b, and the third nozzle 441c.

[0105] The fixing body 442 can fix the nozzle 441. The fixing body 442 can support the nozzle 441. The fixing body 442 can be connected to a rotating shaft 443 that rotates in the third direction Z via a rotating member 444. If the rotating member 444 rotates the rotating shaft 443, the fixing body 442 can rotate about the third direction Z. Accordingly, the outlet of the nozzle 441 can move between a liquid supply position and a standby position, where the processing liquid is supplied to the substrate M and the standby position is where the processing liquid is not supplied to the substrate M. The outlet of the nozzle 441 can swing between the liquid supply position and the standby position.

[0106] Reference Figure 4 and Figure 5 The liquid handling chamber 400 may include a heating unit 450.

[0107] Heating unit 450 can heat substrate M. Heating unit 450 can heat a portion of substrate M. Heating unit 450 can heat substrate M on which a liquid film has been formed by supplying chemical C. Heating unit 450 can heat a pattern formed on substrate M. Heating unit 450 can heat some patterns formed on substrate M. Heating unit 450 can heat either the first pattern P1 or the second pattern P2. For example, heating unit 450 can heat the second pattern P2 of the first pattern P1 and the second pattern P2.

[0108] The heating unit 450 may include a body 451. The body 451 may be a container having mounting space therein. The body 451 may be provided with a laser irradiation module 460, a vision module 470, an illumination module 480, and an optical component 490, which will be described later. Furthermore, the body 451 may include an irradiation end 452. Laser L irradiated by the laser irradiation module 460 (described later) can irradiate the substrate M through the irradiation end 452. Additionally, light irradiated by the illumination module 480 (described later) can be provided through the irradiation end 452. Furthermore, imaging by the vision module 470 (described later) can be performed through the irradiation end 452.

[0109] The heating unit 450 may include a driver 453. The driver 453 may be a motor. The driver 453 may be connected to a shaft 454, which will be described later. The driver 453 may rotate the shaft 454. The driver 453 may provide power to the shaft 454 to cause the shaft 454 to rotate. Accordingly, the body 451 connected to the shaft 454 is rotated, and the position of the irradiation end 452 of the body 451 may also change. The driver 453 may move the shaft 454 in the vertical direction. For example, the position of the irradiation end 452 may be changed with the third direction Z as the axis of rotation. When viewed from above, the center of the irradiation end 452 may be moved in an arc around the shaft 454. When viewed from above, the irradiation end 452 may be moved such that its center passes through the center of the substrate M supported by the support unit 420. The irradiation end 452 may move between a heating position where the laser L irradiates the substrate M and a standby position when heating the substrate M is not performed. Furthermore, the driver 453 may move the shaft 454 in the vertical direction. The actuator 453 can provide power to the shaft 454, causing the shaft 454 to move in the vertical direction. Correspondingly, the body 451 connected to the shaft 454 moves in the vertical direction, and the position of the irradiation end 452 of the body 451 can be changed in the vertical direction. Multiple actuators 453 can be provided. Any one of the multiple actuators 453 can be configured as a rotary motor for rotating the shaft 454. Another actuator of the multiple actuators 453 can be configured as a linear motor for moving the shaft 454 in the vertical direction.

[0110] The heating unit 450 may include a shaft 454. The shaft 454 may be coupled to the body 451. The shaft 454 may be connected to the body 451 via a movable member 455, which will be described later. The shaft 454 may be coupled to a driver 453. The shaft 454 may be positioned between the body 451 and the driver 453. The shaft 454 may rotate or move vertically by receiving power from the driver 453. Accordingly, the body 451 coupled to the shaft 454 may also rotate, swing, or move vertically. In this case, the position of the irradiation end 452 of the body 451 can be changed.

[0111] The heating unit 450 may include a movable member 455. The movable member 455 may be disposed between the body 451 and the shaft 454. The movable member 455 may be an LM guide (linear motion guide). The movable member 455 may move the body 451 in a lateral direction. The movable member 455 may move the body 451 in a first direction X and / or a second direction Y. The position of the irradiation end 452 of the heating unit 450 can be varied by the movable member 455 and the actuator 453.

[0112] Figure 6 for Figure 4 A side cross-sectional view of the heating unit. Figure 7 for Figure 4 A plan view of the heating unit, and Figure 8 The illustration shows the setting. Figure 4 The heating unit contains a laser module, a vision module, an illumination module, and optical components.

[0113] Reference Figures 6 to 8 The heating unit 450 may include a laser module 460. The laser module 460 can irradiate a laser L. The laser module 460 can irradiate a laser L with linearity. The shape and / or profile of the laser L irradiated from the laser module 460 can be adjusted in a beam expander (not shown). For example, the diameter of the laser L irradiated by the laser module 460 can be changed in the beam expander. The diameter of the laser L irradiated by the laser module 460 can be enlarged or reduced in the beam expander.

[0114] The path of the laser L emitted from the laser module 460 can be changed by the optical component 490, which will be described later. The illumination direction of the laser L emitted from the laser module 460 can be changed by the first reflective component 491, which will be described later. The illumination direction of the laser L emitted from the laser module 460 can be changed by the second reflective component 492, which will be described later. The illumination direction of the laser L emitted from the laser module 460 can be changed by the third reflective component 493, which will be described later. The laser L emitted from the laser module 460 can travel along a first illumination direction. The path of the laser L emitted from the laser module 460 and traveling along the first illumination direction can be changed by the first reflective component 491 to a second illumination direction perpendicular to the first illumination direction. The laser L in the second illumination direction can be changed by the second reflective component 492 to a third illumination direction perpendicular to the second illumination direction and parallel to the first illumination direction. The third illumination direction can be a direction coaxial with the imaging direction of the vision module 470, which will be described later. The path of the laser L traveling in the third irradiation direction can be changed in a fourth irradiation direction by the third reflective member 493. This fourth irradiation direction is downward and perpendicular to the third irradiation direction. The fourth irradiation direction can be a direction perpendicular to the virtual plane formed by the first and second irradiation directions. The laser L traveling along the fourth irradiation direction can pass through the irradiation end 452 and be irradiated onto the substrate M.

[0115] The laser module 460 may be disposed within the body 451. The laser module 460 may be disposed adjacent to the vision module 470, which will be described later. The laser module 460 may overlap at least a portion of the vision module 470 in the second illumination direction. The laser module 460 may be spaced apart from the vision module 470 in the second illumination direction. The laser module 460 may be disposed at a position higher than the illumination module 480, which will be described later.

[0116] The laser L emitted from the laser module 460 can be coaxially projected onto the substrate M with the imaging axis of the vision module 470. In this way, the vision module 470 can monitor the process of heating the substrate M and / or applying a processing liquid to the substrate M by the laser L emitted from the laser module 460. The laser L emitted from the laser module 460 can be coaxial with the imaging axis of the vision module 470 via optical component 490. The imaging axes of the lasers L emitted from the laser module 460 and the vision module 470 can be positioned on the same plane.

[0117] Reference Figures 6 to 8 The heating unit 450 may include a vision module 470. The vision module 470 can monitor the laser L emitted by the laser module 460. The vision module 470 can acquire an image of the substrate M. The imaging axis of the vision module 470 can be coaxially arranged with the axis of the laser L of the laser module 460. The imaging axis of the vision module 470 can pass through the irradiation end 452 coaxially with the axis of the laser L of the laser module 460. Accordingly, the vision module 470 can acquire an image of the substrate M irradiated by the laser L of the laser module 460. Then, the vision module 470 can acquire an image including the points irradiated by the laser L irradiated by the laser module 460. The vision module 470 may be a camera or a vision device.

[0118] The direction of travel of the imaging axis generated in the vision module 470 can be the same as the third irradiation direction of the laser L (hereinafter referred to as the first travel direction). The imaging axis generated by the vision module 470 can be guided together with the laser L, whose irradiation direction is changed by the first reflective member 491 and the second reflective member 492, to the third reflective member 493. The direction of travel of the imaging axis generated in the vision module 470 can be changed by the third reflective member 493. The imaging axis generated by the vision module 470 can be changed by the third reflective member 493 in a second travel direction perpendicular to the first travel direction. In this case, the second travel direction can be the same as the fourth irradiation direction of the laser L. The imaging axis of the vision module 470 travels in the second travel direction, passes through the irradiation end 452 to the substrate M, and acquires an image of the laser L and the irradiation point.

[0119] The vision module 470 can be disposed within the body 451. The vision module 470 can be disposed adjacent to the laser module 460. The vision module 470 can be spaced apart from the laser module 460 in the second illumination direction of the laser L. At least a portion of the vision module 470 can overlap with the laser module 460 in the second illumination direction. The vision module 470 can be disposed on the illumination module 480, which will be described later. The imaging axis of the vision module 470 can be parallel to the illumination axis of the illumination module 480. The imaging axis of the vision module 470 can overlap with the optical axis of the illumination module 480 in the vertical direction (the fourth illumination direction of the laser L or the second travel direction of the imaging axis). The imaging axis of the vision module 470 can be positioned on the same plane as the laser L. Accordingly, if the path of the laser L is altered by the first reflective member 491, the laser L can illuminate towards the imaging axis of the vision module 470. Furthermore, if the path is altered by the laser L and the first reflective member 491 and the second reflective member 492, the laser L and the vision module 470 can be coaxial with the imaging axis, and correspondingly, the laser L and the imaging axis can together illuminate the substrate M, and the vision module 470 can monitor the laser L and the points illuminated on the substrate M.

[0120] Reference Figures 6 to 8 The heating unit 450 may include an illumination module 480. The illumination module 480 provides illumination, facilitating image acquisition by the vision module 470. The illumination module 480 may be disposed within the body 451. The illumination module 480 may be disposed below the vision module 470. The illumination module 480 may overlap with the vision module 470 in the vertical direction. The optical axis of the illumination provided by the illumination module 480 may be parallel to the imaging axis of the vision module 470. The optical axis of the illumination provided by the illumination module 480 may be parallel to a first direction of travel of the imaging axis of the vision module 470. The path of the illumination provided by the illumination module 480 may be changed by a fourth reflective member 494. The path of the illumination provided by the illumination module 480 may be changed in a direction perpendicular to the direction of travel of the fourth reflective member 494. The optical axis of the illumination whose path is changed by the fourth reflective member 494 may be the same as the fourth irradiation direction of the laser L and the second direction of travel of the imaging axis. When the illumination from the illumination module 480, the imaging axis of the vision module 470, and the laser L from the laser module 460 pass through the irradiation end 452 and reach the substrate M, the vision module 470 can acquire an image of the substrate M and monitor the substrate M.

[0121] Reference Figures 6 to 8The heating unit 450 may include an optical module 490. The optical module 490 may be disposed within the body 451. The optical module 490 may modify each path so that the laser L, the imaging axis, and the illumination axis have coaxial axes. The optical module 490 may include a first reflective member 491, a second reflective member 492, a third reflective member 493, and a fourth reflective member 494.

[0122] The first reflective member 491 can be installed on the path of the laser L along the first irradiation direction. The first reflective member 491 can change the path of the laser L traveling along the first irradiation direction. The first reflective member 491 can change the laser L from the first irradiation direction to a second irradiation direction perpendicular to the first irradiation direction.

[0123] The second reflective member 492 can overlap with the first reflective member 491 in the second illumination direction. The second reflective member 492 can be mounted on the first travel direction path of the imaging axis of the vision module 470. The second reflective member 492 can change the illumination direction of the laser L illuminating along the second illumination direction through the first reflective member 491. The second reflective member 492 can change the laser L in the second illumination direction to a third illumination direction perpendicular to and parallel to the second illumination direction. The second reflective member 492 can change the laser L traveling in the second illumination direction to the same direction as the first travel direction of the imaging axis of the vision module 470.

[0124] The third reflector 493 can be mounted on the first travel direction path of the imaging axis of the vision module 470. The third reflector 493 can be spaced apart from the second reflector 492 in the first travel direction. The third reflector 493 can change the laser L traveling in the third illumination direction to a fourth illumination direction. The third reflector 493 can change the imaging axis moving in the first travel direction to a second travel direction.

[0125] The fourth reflector 494 can be installed on the path of illumination travel of the illumination module 480. The fourth reflector 494 can be positioned spaced apart from the third reflector 493 in the second travel direction and / or the fourth illumination direction. The fourth reflector 494 can be positioned below the third reflector 493. The fourth reflector 494 can alter the illumination path. The fourth reflector 494 can alter the path so that the illumination from the illumination module 480 illuminates in the same direction as the second travel direction and the fourth illumination direction.

[0126] The third reflector 493 and the fourth reflector 494 may overlap with the irradiation end 452 in the vertical direction.

[0127] Figure 9The illustration schematically shows a basic image acquired by a vision module according to an embodiment of the present invention, and Figure 10 The illustration schematically shows a substrate image acquired by a vision module according to an embodiment of the present invention. From Figure 15 As can be seen from (a) to (d), bubbles are generated when the local heating time increases, and the size of bubble B increases with the increase of heating time.

[0128] Hereinafter, a substrate processing method according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The substrate processing method according to an embodiment of the present invention can be performed in the liquid processing chamber 400 described above. Furthermore, the controller 30 can control the components of the liquid processing chamber 400 so that the liquid processing chamber 400 can perform the substrate processing method described below. For example, the controller 30 can generate control signals to control at least one of the support unit 420, the lifting member 436, the liquid supply unit 440, and the heating unit 450, so that the components of the liquid processing chamber 400 can perform the substrate processing method described below.

[0129] Figure 9 This is a flowchart of a substrate processing method according to an embodiment of the present invention. Figure 10 for Figure 9 A flowchart of the critical size correction steps. Figure 11 Demonstrated execution Figure 10 The substrate processing apparatus for the process liquid supply step. Figure 12 Demonstrated execution Figure 10 The substrate processing apparatus for the reference image acquisition step. Figure 13 Shown in Figure 12 Implementation scheme of the reference image obtained in the process, Figure 14 Demonstrated execution Figure 10 Substrate processing apparatus for heating process, Figure 15 Showing when Figure 14 An implementation scheme for obtaining substrate images from a vision module when bubbles are generated during the heating process, and Figure 16 Demonstrated execution Figure 9 A substrate processing apparatus for the rinsing step.

[0130] Reference Figure 9 The substrate processing method may include a substrate placement step S100, a critical size correction step S200, a rinsing step S300, and a substrate removal step S600.

[0131] In the substrate placement step S100, the door can be opened to access the removal port formed in the housing 410. Furthermore, in the substrate placement step S100, the transfer robot 320 can mount the substrate M onto the support unit 420.

[0132] If the substrate M is placed on the support unit 420, a critical size correction step S200 can be performed. In the critical size correction step S200, etching of the pattern formed on the substrate M can be performed. In the critical size correction step S200, the pattern formed on the substrate M can be etched such that the critical size of the first pattern P1 and the critical size of the second pattern P2 are consistent with each other. In the critical size correction step S200, a critical size correction process for correcting the critical size difference between the first pattern P1 and the second pattern P2 can be performed.

[0133] Reference Figure 10 The critical dimension correction step S200 may include a processing liquid supply step S210, a reference image acquisition step S220, and a heat treatment step S230. Furthermore, the critical dimension correction step S200 may further include the following step: if bubbles B are generated during heat treatment, determine whether to continue the critical dimension correction process. The step of determining whether to perform the critical dimension correction process may include a substrate image acquisition step S241, a comparison with a reference image step S242, and a step of determining whether to proceed with the process S243.

[0134] Reference Figure 10 and Figure 11 The processing liquid supply step S210 can be a step in which chemical C, acting as an etchant, is supplied to the substrate M via the liquid supply unit 440. In the processing liquid supply step S210, the support unit 420 may not rotate the substrate M. This is to allow for special... (The sentence is incomplete and requires further context to be fully translated.)

[0135] The laser L is precisely irradiated to define the pattern. When the substrate M rotates, it is necessary to minimize the positional distortion of the substrate M. Furthermore, the amount of chemical C supplied in the processing liquid supply step S210 can be supplied sufficiently to allow the chemical C supplied to the substrate M to form clumps. For example, in the processing liquid supply step S210...

[0136] The amount of chemical C supplied can cover the entire top surface of substrate M, and can be supplied to such an extent that the amount of chemical C does not flow downward from substrate M or only a small amount flows out from substrate M. If necessary, nozzle 441 can supply the treatment liquid C to the entire top surface of substrate M while changing the position of the substrate.

[0137] Reference Figure 10 and Figure 12 In the reference image acquisition step S220, the laser module 460 is activated. In this case, both the vision module 470 and the illumination module 480 can be activated. When the laser module 460 is activated, the laser L is irradiated onto a specific location on the substrate M where the processing liquid C is applied. For example, the laser L can irradiate either the first pattern P1 or the second pattern P2 on the substrate M.

[0138] Laser L can be irradiated onto the second pattern P2 of substrate M. Vision module 470 can acquire a reference image by imaging a specific location on substrate M where the processing liquid C is applied. For example, vision module 470 can acquire a reference image of a specific portion of substrate M (including the area irradiated by laser L).

[0139] Imaging. The vision module 470 can acquire a reference image by imaging a portion of the substrate M (including the 0 point illuminated by laser L). Reference Figure 13 The laser L can be displayed on the reference image.

[0140] Reference Figure 10 and Figure 14 The heat treatment step S230, which heats the substrate M, can be performed after acquiring the reference image. In the heat treatment step S230, the substrate M can be heated by irradiating it with a laser L. Figure 14 As shown, in heat treatment step S230, chemical C is supplied to heating unit 450 to...

[0141] Laser L irradiates a substrate M on which a liquid film is formed, thereby heating the substrate M. In heat treatment step S2305, laser L can irradiate a specific area of ​​the substrate M. The temperature of the specific area irradiated by laser L can be increased. Accordingly, the etching degree of chemical C in the area irradiated by laser L can be increased. Furthermore, in heat treatment step S230, laser L can irradiate either the first pattern P1 or the second pattern P2. For example, laser L can irradiate only the second pattern P2 of the first pattern P1 and the second pattern P2.

[0142] Accordingly, the etching capability of chemical C on the second pattern P2 is improved. Consequently, the zero critical dimension of the first pattern P1 can be changed from a first width (e.g., 69 nm) to a target critical dimension (e.g., 70 nm).

[0143] Furthermore, the critical size of the second pattern P2 can be changed from the second width (e.g., 68.5 nm) to the target critical size (e.g., 70 nm). In other words, by improving the etching capability of a portion of the substrate M, the critical size deviation of the pattern formed on the substrate M can be minimized.

[0144] In the heat treatment step S230, the vision module 470 can monitor the point irradiated by the laser L. The vision module 470 can monitor the point irradiated by the laser L in real time, or it can monitor the point irradiated by the laser L at predetermined time intervals. The vision module 470 can acquire a substrate image through monitoring. The controller 30 can receive the substrate image monitored and acquired by the vision module 470. The controller 30 can determine whether bubble B is generated through the substrate image of the vision module 470. If a specific location of the substrate M is heated by the laser L, bubble B can be generated through the evaporation of the liquid when the processing liquid C is heated to a temperature that is the same as, similar to, or higher than the boiling point. Bubble B interferes with the contact between the substrate M and the processing liquid C. In this case, the problem is that the etching ability of the processing liquid on the substrate M deteriorates or the substrate M is not etched. Accordingly, if the appearance of bubble B is detected, the controller 30 can perform the step of determining whether to continue the critical size correction process. Furthermore, if it is determined that bubble B is higher than a reference value, the controller 30 can stop the ongoing critical size correction process and can change the process conditions for the substrate M to be processed subsequently. For example, the controller 30 can change the output conditions of the laser L of the laser module 460 and adjust the irradiation range of the laser L.

[0145] Reference Figure 10 The step of determining whether to continue the critical size correction process may include a substrate image acquisition step S241, a reference image comparison step S242, and a process determination step S243. In the substrate image acquisition step S241, the vision module 470 can acquire a substrate image by imaging the area on the substrate M where the bubble B is generated. (Refer to...) Figure 15 The vision module 470 can acquire a substrate image by monitoring the growth process of bubble B in real time while continuously performing localized heating of the substrate M by laser L. Furthermore, the vision module 470 can acquire a substrate image by monitoring the growth process of bubble B at regular time intervals while laser L continues to locally heat the substrate M. Figure 15 From (a) to (d), the heating time of laser L is increased, so the size of bubble B can be increased.

[0146] The controller 30 can execute an image comparison step S242, which compares the acquired substrate image with the reference image acquired in the reference image acquisition step S220. For example, the controller 30 can respectively compare the acquired substrate image with the reference image acquired in the reference image acquisition step S220. Figure 13 Reference image and Figure 15 Compare the substrate images (a) to (d).

[0147] Subsequently, the controller 30 can perform the process determination step S243. In the process determination step S243, the controller 30 can determine whether the amount of change between the reference image and the substrate image is 10% or less. The observed change value can be set to 10% to reduce the sensing error or growth error of bubble B. In this case, the error can refer to the error in the substrate image acquired by the vision module 470. The error of the substrate image can include the following: the bubble B appears to be formed in the substrate image, or the size of the bubble B appears to have grown larger than the actual size of the bubble B. For example, there may be substrate image errors due to vibration of the substrate processing apparatus 1, substrate image errors due to fluctuations in the processing liquid C supplied to the substrate M caused by the downward airflow formed in the internal space 412 of the liquid processing chamber 400, or substrate image errors due to particles floating in the processing liquid C. The controller 30 compares and determines the amount of change between the reference image and the substrate image in which bubble B is generated, and if the amount of change is 10% or more, an alarm can be generated. If an alarm is triggered, the laser L of the laser module 460 can be turned off, the process can be interrupted, and the process conditions for the substrate M to be processed can subsequently be changed or reset.

[0148] In step S243, which determines whether to continue the process, if the difference between the reference image and the substrate image is determined to be 10% or less, the process can continue. That is, the heat treatment by laser L can continue. Afterward, if the set etching is completed, laser L is turned off, and the critical size correction process for the corresponding substrate M can be terminated. For example, if the critical size of the first pattern P1 and the critical size of the second pattern P2 are etched to be consistent within the error range, the critical size correction process can be terminated.

[0149] In the rinsing step S300, process byproducts generated in the critical dimension correction step S200 can be removed from the substrate M. In the rinsing step S300, rinsing fluid R can be supplied to the rotating substrate M to remove process byproducts formed on the substrate M. If necessary, to dry any residual rinsing fluid R on the substrate M, the support unit 420 can rotate the substrate M at high speed to remove any residual rinsing fluid R.

[0150] In the substrate removal step S400, the processed substrate M can be removed from the internal space 412. In the substrate removal step S400, the door can be opened to access the removal port formed in the housing 410. Furthermore, in the substrate removal step S400, the transfer robot 320 can unload the substrate M from the support unit 420 and remove the unloaded substrate M from the internal space 412.

[0151] As the final step in the manufacturing process of substrate M, a critical size correction process is performed to adjust the critical size deviation between the first pattern P1 (monitoring pattern) and the second pattern P2 (anchor pattern). Typically, in the critical size correction process, since the processing liquid C is applied to the entire surface of substrate M to simultaneously etch the first pattern P1 and the second pattern P2, the critical size deviations of the first pattern P1 and the second pattern P2 remain the same, making it difficult to ensure optimized exposure conditions during substrate M manufacturing. To address this issue, a method is used to increase the etching amount of relevant points by irradiating the substrate M with a laser L to etch more points (e.g., the second pattern P2). However, if the laser L increases the temperature of a localized area on the surface of substrate M, and the processing liquid C is heated to or near its boiling point, bubbles B are generated due to liquid evaporation. If bubbles B are generated on the surface of substrate M, the surface of substrate M and the processing liquid C do not contact each other, thus degrading etching capability.

[0152] However, according to an embodiment of the present invention, the point illuminated by the laser L through the vision module 470 coaxial with the laser module 460 can be monitored simultaneously while the laser L is being irradiated, thereby suppressing the reduction in etching effect due to bubbles B during the critical dimension correction process. Thus, the generation and growth of bubbles B on the substrate M and / or the processing solution C can be monitored, allowing for the early detection of process errors caused by contact with bubbles B. According to an embodiment of the present invention, since the generation of bubbles B is continuously monitored during the critical dimension correction process, process errors can be checked before the end of the critical dimension correction process or before the final inspection step of the substrate M is discovered after the process is terminated, thereby reducing the risk of process failure. Furthermore, detecting the occurrence and growth of bubbles B during the process and considering the error range to determine whether the process should continue saves process time and reduces costs.

[0153] The effects of this invention are not limited to those described above, and those skilled in the art will clearly understand any effects not mentioned from the specification and drawings.

[0154] Although preferred embodiments of the inventive concept have been shown and described to date, the inventive concept is not limited to the specific embodiments described above, and it should be noted that those skilled in the art to which the inventive concept pertains can implement the inventive concept in various ways without departing from the essence of the inventive concept claimed in the claims, and modifications should not be interpreted separately from the technical spirit or prospect of the inventive concept.

Claims

1. A substrate processing apparatus, the substrate processing apparatus comprising: case; A support unit, which is positioned within the housing and configured to support a base plate; A liquid supply unit configured to supply processing liquid to the substrate supported on the support unit; A laser module configured to irradiate a substrate supplied with the processing liquid with a laser; A vision module for monitoring the laser-irradiated points in the substrate; as well as Controller, the controller being used to control the substrate processing apparatus; The vision module monitors whether bubbles have been generated and whether the size of the bubbles has increased during the process of heating the processing liquid applied to the substrate by the laser. Specifically, by comparing a reference image of the substrate obtained from the vision module with a substrate image of the substrate from the vision module that generates the bubbles, it is determined whether the critical dimension correction process being performed on the substrate can be terminated. The vision module acquires the reference image by activating the laser module and using an image of the state of the substrate illuminated by the laser.

2. The substrate processing apparatus according to claim 1, wherein, The laser beam emitted from the laser module and the imaging axis of the vision module are set to be coaxial.

3. The substrate processing apparatus according to claim 1, further comprising an illumination module that provides illumination to the laser-irradiated point in the substrate, and in, The illumination axis of the illumination module and the imaging axis of the vision module are set to be coaxial.

4. The substrate processing apparatus of claim 1, further comprising an illumination module that provides illumination to the laser-irradiated point on the substrate, and in, The laser module and the vision module are arranged on the same plane, and The lighting module is located below the vision module.

5. The substrate processing apparatus according to claim 4, further comprising a body, wherein the laser module, the vision module, and the illumination module are disposed in the body, and in, The irradiation end is located at the body, and The laser from the laser module is coaxially aligned with the imaging axis of the vision module and illuminates the substrate. The illumination axis of the illumination module is configured to be parallel to the imaging axis of the vision module.

6. The substrate processing apparatus according to claim 1, wherein, If the change between the reference image and the substrate image is determined to be 10% or less, the controller continues the critical dimension correction process being performed on the substrate.

7. The substrate processing apparatus according to claim 1, wherein, If the amount of change between the reference image and the substrate image is determined to be 10% or higher, the controller terminates the critical dimension correction process being performed on the substrate.

8. The substrate processing apparatus according to claim 7, wherein, If the critical dimension correction process currently being performed on the substrate is terminated, the controller changes the process conditions for the substrate that will subsequently undergo the critical dimension correction process. The controller controls the laser module, thereby changing the output conditions of the laser or changing the irradiation range of the laser.

9. The substrate processing apparatus according to claim 1, wherein, The substrate includes a first pattern and a second pattern formed at a position different from the first pattern, and The laser module illuminates either the first pattern or the second pattern with the laser.

10. The substrate processing apparatus according to claim 1, wherein, The substrate includes a first pattern and a second pattern, the first pattern having a first critical dimension, and the second pattern being formed at a different location from the first pattern and having a second critical dimension smaller than the first critical dimension. The laser module irradiates the second pattern with the laser, making the first critical dimension and the second critical dimension the same.

11. A substrate processing method, the substrate processing method comprising: A substrate is placed therein, the substrate having a first pattern and a second pattern formed at a position different from the first pattern; Correct the critical size of the first pattern or the critical size of the second pattern; The rinsing solution is supplied to the substrate; as well as Remove the substrate, and Specifically, when correcting the critical dimension, a vision module is used to detect whether bubbles have been generated, and if bubbles are detected, the critical dimension correction process is determined by comparing the substrate image where the bubbles are generated with a reference image. The reference image is acquired through the vision module, and The vision module acquires the reference image by activating the laser module and using an image of the state of the substrate illuminated by the laser.

12. The substrate processing method according to claim 11, wherein, During the calibration of the critical dimension, a processing solution is supplied to the substrate, and a laser module irradiates the substrate to heat the substrate to which the processing solution has been applied. The laser module illuminates the second pattern with the laser.

13. The substrate processing method according to claim 11, wherein, If the change between the substrate image that produces the bubble and the reference image is 10% or less, the critical dimension correction process for the substrate continues.

14. The substrate processing method according to claim 11, wherein, If the change between the substrate image that produces the bubbles and the reference image is 10% or higher, the critical dimension correction process for the substrate is terminated.

15. The substrate processing method according to claim 14, wherein, If the change is 10% or higher, an alarm is generated; and if the alarm is generated, the laser module is shut down.

16. The substrate processing method according to claim 14, wherein, If the change is determined to be 10% or higher, and the critical size correction process is terminated, then the process conditions for the substrate to be post-processed are reset.

17. A substrate processing apparatus, the substrate processing apparatus comprising: case; A support unit, which is positioned within the housing and configured to support a base plate; A liquid supply unit configured to supply processing liquid to the substrate supported on the support unit; A heating unit configured to heat the substrate to which the processing liquid is supplied; as well as Controller, and The heating unit includes: The irradiation end is located on the main body; A laser module is disposed within the body and irradiates the substrate with a laser to heat the substrate. A vision module, disposed within the body, is used to monitor whether bubbles are generated at the point of laser irradiation, and the vision module is coaxial with the laser module; and An illumination module is disposed within the body and provides illumination to the point illuminated by the laser. The illumination module is coaxial with the vision module. Specifically, the vision module acquires a reference image of the substrate immediately after the laser is activated at the laser module; and if bubbles are generated, it acquires an image of the substrate where the bubbles are generated. The controller determines whether to continue the critical size correction process by comparing the reference image with the substrate image that generated the bubble; and terminates the critical size correction process if the change is 10% or higher.

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