Image sensor and method of manufacturing the same, electronic device
CN116364730BActive Publication Date: 2026-06-05SMARTSENS TECH (SHANGHAI) CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SMARTSENS TECH (SHANGHAI) CO LTD
- Filing Date
- 2021-12-27
- Publication Date
- 2026-06-05
AI Technical Summary
Technical Problem
Existing dual-core phase detection autofocus technology is generally ineffective at acquiring vertical pixel information and cannot achieve omnidirectional phase detection autofocus.
Method used
Design an image sensor in which each pixel in the pixel array includes multiple sub-photoelectric conversion elements divided along different directions, combined with independent transmission transistors and a shared floating diffusion region, and optimized arrangement of gain control and reset transistors to achieve omnidirectional dual-core phase focusing.
Benefits of technology
It enables the simultaneous acquisition of horizontal and vertical phase information, reduces signal loss, saves image sensor area, and improves photosensitive accuracy and application range.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN116364730B_ABST
Abstract
The application provides an image sensor, a preparation method thereof and an electronic device. The pixel array of the image sensor comprises pixel units arranged in an array, and each pixel unit comprises at least two pixels. The first photoelectric conversion element of at least one first pixel comprises two sub photoelectric conversion elements divided along a first direction. The second photoelectric conversion element of at least one second pixel comprises two sub photoelectric conversion elements divided along a second direction different from the first direction. Each pixel comprises a charge generation and collection region and a signal readout circuit region arranged adjacently, and the two divided sub photoelectric conversion elements have independent transfer transistors and a shared floating diffusion region to form the charge generation and collection region. The signal readout circuit region is connected to the floating diffusion region to realize signal readout. The application comprises left-right dual-core pixels and up-down dual-core pixels, and can simultaneously obtain lateral phase information and longitudinal phase information, thereby realizing omnidirectional dual-core phase focusing.
Need to check novelty before this filing date? Find Prior Art