Chip of LED light emitting diode and manufacturing method thereof

Abstract

A chip of an LED light emitting diode comprises: a current blocking layer comprising a first current blocking layer and a second current blocking layer, the first current blocking layer is grown along the length direction of an epitaxial layer, a plurality of second current blocking layers are arranged at one end of the first current blocking layer and spaced from each other, and the plurality of second current blocking layers are grown in a preset shape; the first current blocking layer gradually widens in a direction away from the second current blocking layer; a transparent conductive layer comprises a first transparent conductive layer and a second transparent conductive layer, the first transparent conductive layer is grown on the current blocking layer, the first transparent conductive layer at least partially overlaps with the second current blocking layer, and the second transparent conductive layer is grown on the epitaxial layer; a metal finger electrode narrows in width from a first end of the metal finger electrode to a second end of the metal finger electrode, the width of the metal finger electrode is smaller than the width of the first current blocking layer, and the second current blocking layer is distributed around the first end of the metal finger electrode.

Description

Technical Field

[0001] This application relates to the field of LED light-emitting diode technology, and in particular to an LED light-emitting diode chip and its manufacturing method. Background Technology

[0002] Elongated LED (Light Emitting Diode) chips, due to their high aspect ratio, are particularly suitable for mobile phone screens. To ensure the display quality of mobile phone screens, LEDs primarily utilize thin metal finger electrodes fabricated on the epitaxial layer. While these metal finger electrodes effectively guarantee the display quality, their thinness significantly compromises the chip's electrostatic discharge (ESD) immunity, increasing the probability of ESD breakdown and consequently affecting the LED's lifespan. In other words, the thinness of the metal finger electrodes leads to concentrated current, making them prone to creating breakdown voids in the epitaxial layer. This can cause abnormal light emission in the metal finger electrode area, ultimately impacting the LED's lifespan.

[0003] In this case, to increase the anti-static capability of the LED chip, the metal finger electrodes need to be widened. However, widening the metal finger electrodes will result in sacrificing the brightness of the LED chip.

[0004] For the reasons mentioned above, there is an urgent need for an LED light-emitting diode chip that can balance chip brightness and anti-static effect. Summary of the Invention

[0005] This application provides an LED light-emitting diode chip to solve the problem that existing LED light-emitting diode chips cannot simultaneously achieve both brightness and anti-static effect.

[0006] The first aspect of this application provides an LED light-emitting diode chip, comprising:

[0007] A substrate, and an epitaxial layer, a current blocking layer, a transparent conductive layer and a metal finger electrode sequentially grown on the substrate;

[0008] The current blocking layer includes a first current blocking layer and a second current blocking layer. The first current blocking layer grows along the length direction of the epitaxial layer. There are multiple second current blocking layers, which are spaced apart and disposed at one end of the first current blocking layer. The multiple second current blocking layers are arranged and grown in a predetermined shape.

[0009] The first current blocking layer gradually widens in the direction away from the second current blocking layer;

[0010] The transparent conductive layer includes a first transparent conductive layer and a second transparent conductive layer. The first transparent conductive layer is grown on the current blocking layer and at least partially overlaps with the second current blocking layer. The second transparent conductive layer is grown on the epitaxial layer.

[0011] The metal finger electrode is grown in the region of the current blocking layer projected onto the transparent conductive layer. The metal finger electrode has a first metal finger electrode end and a second metal finger electrode end opposite to each other. The width of the metal finger electrode gradually narrows from the first metal finger electrode end to the second metal finger electrode end, and the width of the metal finger electrode is smaller than the width of the first current blocking layer. The second current blocking layer is distributed around the first metal finger electrode end.

[0012] In some feasible embodiments, the endpoint of the first end of the metal finger electrode is a P-electrode pad, which is circular or polygonal, and the width of the portion where the first end of the metal finger electrode and the second end of the metal finger electrode are connected is 2.5 to 20 μm.

[0013] In some feasible embodiments, the second end of the metal finger electrode is provided with an antistatic portion, and the distance between two opposite points of the antistatic portion is greater than the width of the metal finger electrode; the length between two opposite points of the second end of the metal finger electrode is 2.5 to 6.5 μm.

[0014] In some implementable embodiments, the first transparent conductive layer includes a hollow conductive ring that covers a portion of the second current blocking layer, such that the hollow portion of the conductive ring can be orthographically projected onto the area enclosed by the plurality of second current blocking layers.

[0015] In some implementable embodiments, the conductive ring includes a plurality of inward recesses such that the first transparent conductive layer has a plurality of protrusions surrounding the conductive ring, the protrusions being at least partially grown on the second current blocking layer.

[0016] In some feasible embodiments, the current blocking layer is SiO2 or Si3N4, and the width of the first current blocking layer is 16.5 to 50 μm.

[0017] In some implementable embodiments, the epitaxial layer surface includes a first epitaxial layer surface and a second epitaxial layer surface, the first epitaxial layer surface being located at two adjacent edges of the epitaxial layer, and the second epitaxial layer surface having the second transparent conductive layer grown thereon; the current blocking layer includes a third current blocking layer, wherein...

[0018] The surface of the first epitaxial layer has an N-type electrode exposed portion, which includes a first N-type electrode exposed portion and a second N-type electrode exposed portion. The first N-type electrode exposed portion is disposed at the end of the epitaxial layer away from the first end of the metal finger electrode in the length direction of the epitaxial layer. The center of the first N-type electrode exposed portion has the third current blocking layer.

[0019] The second N-type electrode exposed portion is disposed along the width direction of the epitaxial layer.

[0020] In some feasible embodiments, an insulating protective layer is also included; the insulating protective layer is grown in the uncovered areas of the epitaxial layer, the current blocking layer, the transparent conductive layer, and the metal finger electrode.

[0021] In some feasible embodiments, the metal finger electrode includes an adhesion layer, a structural layer, and a conductive layer disposed sequentially; wherein,

[0022] The adhesion layer is composed of Cr, Ni or Ti;

[0023] The structural layer is composed of Al, Cr, Ti, Pt or Ni;

[0024] The conductive layer is composed of Cu, Au, Sn or AuSn.

[0025] The second aspect of this application provides a method for manufacturing an LED light-emitting diode chip, applicable to the aforementioned LED light-emitting diode chip, the method comprising:

[0026] An epitaxial layer is grown on a substrate;

[0027] A current blocking layer is grown on the epitaxial layer;

[0028] A transparent conductive layer is grown on the current blocking layer;

[0029] Metal finger electrodes are grown at the orthogonal projection location of the current-blocking layer in the transparent conductive layer; wherein...

[0030] The current blocking layer includes a first current blocking layer and a second current blocking layer. The first current blocking layer grows along the length direction of the epitaxial layer. There are multiple second current blocking layers, which are spaced apart and disposed at one end of the first current blocking layer. The multiple second current blocking layers are arranged and grown in a predetermined shape.

[0031] The width of the first current blocking layer gradually increases from the end closest to the second current blocking layer to the end furthest away from the second current blocking layer.

[0032] The transparent conductive layer includes a first transparent conductive layer and a second transparent conductive layer. The first transparent conductive layer is grown on the current blocking layer and at least partially overlaps with the second current blocking layer. The second transparent conductive layer is grown on the epitaxial layer.

[0033] The metal finger electrode is grown in the region of the current blocking layer projected onto the transparent conductive layer. The metal finger electrode has a first metal finger electrode end and a second metal finger electrode end opposite to each other. The width of the metal finger electrode gradually narrows from the first metal finger electrode end to the second metal finger electrode end, and the width of the metal finger electrode is smaller than the width of the first current blocking layer. The second current blocking layer is distributed around the first end.

[0034] The beneficial effects of this application are:

[0035] This application provides an LED chip, wherein an epitaxial layer, a current blocking layer, a transparent conductive layer, and metal finger electrodes are sequentially grown on a substrate, wherein the substrate is an Al2O3 substrate. The current blocking layer includes a first current blocking layer and a second current blocking layer. The first current blocking layer grows along the length of the epitaxial layer. Multiple second current blocking layers are spaced apart at one end of the first current blocking layer and arranged in a predetermined shape. The first current blocking layer gradually widens away from the second current blocking layer. The transparent conductive layer includes a first transparent conductive layer and a second transparent conductive layer. The first transparent conductive layer grows on the current blocking layer, and the first transparent conductive layer and the second current blocking layer at least partially overlap. The second transparent conductive layer grows on the epitaxial layer. Thus, when current enters from the P-electrode, the second current blocking layer prevents the current from directly entering the P-Gan layer, instead requiring it to pass through the second transparent conductive layer. This increases the current transport capability. The current passes through the second and first transparent conductive layers to enter the P-Gan layer, increasing the brightness of the LED chip. The gradually widening structure of the current-blocking layer enhances the diffusion of current along the transparent conductive layer on the metal finger. In other words, the narrow-at-the-front, wide-at-the-back design of the current-blocking layer ensures that the current at the tip of the metal finger can diffuse along the transparent conductive layer. Furthermore, the metal finger electrode is grown in the area where the current-blocking layer is projected onto the transparent conductive layer. The metal finger electrode has a first end and a second end, with the width gradually narrowing from the first end to the second end. The width of the metal finger electrode is smaller than the width of the first current-blocking layer. A second current-blocking layer is distributed around the first end of the metal finger electrode. This front-wide, back-narrow design increases the width of the first end (front end), allowing it to withstand high-density currents and facilitating current diffusion. This reduces the current reaching the second end (tip). Moreover, the current diffuses sufficiently during its journey from the first end to the second end, thus providing a certain degree of antistatic effect. Attached Figure Description

[0036] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0037] Figure 1 This is a schematic diagram of an LED light-emitting diode chip;

[0038] Figure 2 This is a schematic diagram of the metal finger electrodes of an LED chip, which are wider at the front and narrower at the back.

[0039] Figure 3 for Figure 2 A schematic diagram of the widened current blocking layer;

[0040] Figure 4 for Figure 3 A schematic diagram of a current blocking layer that is narrow at the front and wide at the back;

[0041] Figure 5 for Figure 4 A schematic diagram showing that the second end of the metal finger electrode has an antistatic part;

[0042] Figure 6 for Figure 5 A schematic diagram of the second transparent conductive layer and the current blocking layer;

[0043] Figure 7 for Figure 6 A schematic diagram showing the alternating stacking of the second transparent conductive layer and the second current blocking layer;

[0044] Figure 8 This is a schematic diagram of the exposed N-type electrode portion of an LED light-emitting diode chip;

[0045] Figure 9 This is a schematic diagram of the current blocking layer of an LED chip;

[0046] Figure 10 This is a schematic diagram of the transparent conductive layer of an LED light-emitting diode chip;

[0047] Figure 11 A schematic diagram of the metal finger electrodes of an LED light-emitting diode chip;

[0048] Figure 12 This is a schematic diagram of the insulating protective layer of an LED chip.

[0049] Figure label:

[0050] 1-Substrate; 2-Epipolar layer; 21-Surface of first epipolar layer; 22-Surface of second epipolar layer; 3-Current blocking layer; 31-First current blocking layer; 32-Second current blocking layer; 33-Third current blocking layer; 4-Transparent conductive layer; 41-First transparent conductive layer; 42-Second transparent conductive layer; 43-Recess; 44-Protrusion; 5-Metal finger electrode; 51-First end of metal finger electrode; 52-Second end of metal finger electrode; 53-Antistatic part; 6-N-type electrode exposed part; 61-First N-type electrode exposed part; 62-Second N-type electrode exposed part; 63-N-type electrode solder joint; 7-Insulating protective layer. Detailed Implementation

[0051] The technical solution of the present invention will be clearly and completely described below with reference to the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0052] The serial numbers assigned to components in this document, such as "first" and "second," are used solely to distinguish the described objects and have no sequential or technical meaning. The terms "connection" and "linkage" used in this application, unless otherwise specified, include both direct and indirect connections (linkages). It should be understood that the terms "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are used solely for the convenience of describing this application and simplifying the description. They do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0053] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0054] Here is an explanation of some terms that appear in this application:

[0055] MOCVD, short for Metal-or-Ganic Chemical Vapor Deposition, is a method for growing conductive thin films on a substrate. It involves sending all the reactants, in the form of gaseous molecules of organometallic compounds, into a reaction chamber using H2 gas as a carrier gas to undergo thermal decomposition reactions to form compound semiconductors.

[0056] ITO, short for Indium Tin Oxide, is a transparent conductive film.

[0057] See Figure 1 This application provides an LED light-emitting diode chip comprising a substrate 1, an epitaxial layer 2, a current blocking layer 3, a transparent conductive layer 4, and a metal finger electrode 5.

[0058] The substrate 1 can be a sapphire Al2O3 substrate or a silicon carbide substrate, etc. An epitaxial layer 2, a current blocking layer 3, a transparent conductive layer 4, and metal finger electrodes 5 are sequentially grown on the substrate 1. The aspect ratio of the substrate 1 is ≥3:1, so that chips constructed with this length can be used in displays such as those on mobile phones.

[0059] like Figure 1 As shown, the epitaxial layer 2 can be grown on the substrate 1 by MOCVD vapor deposition. The epitaxial layer 2 includes an N-Gan (N-type gallium nitride) layer, an MQWS (quantum well) layer, and a P-Gan (P-type gallium nitride) layer that are sequentially stacked on the substrate 1.

[0060] like Figure 2 , Figure 3 , Figure 4 and Figure 9 As shown, the current blocking layer 3 is composed of SiO2 or Si3N4, and has a widened design. For example, the width of the current blocking layer 3 is M3, where M3 is 36 μm. The current blocking layer 3 may include a first current blocking layer 31 and a second current blocking layer 32. The current blocking layer 3 can prevent the current on the metal finger electrode 5 from migrating directly from the P-Gan layer to the N-Gan layer through the transparent conductive layer, thereby improving the uniformity of current distribution.

[0061] The first current blocking layer 31 is distributed along the length direction of the epitaxial layer 2 and is grown on the epitaxial layer 2.

[0062] The number of second current blocking layers 32 is multiple, for example, the number of second current blocking layers 32 is an integer value between 2 and 10, and the multiple second current blocking layers 32 are disposed at the end of the first current blocking layer 31. The multiple second current blocking layers 32 have a predetermined shape and are distributed at intervals between each other. For example, when the predetermined shape is circular, the multiple second current blocking layers 32 are distributed circumferentially at intervals along the center of the circle, so that the second current blocking layers 32 can form a ring structure at one end of the first current blocking layer 31. In addition, the multiple second current blocking layers 32 can also be rectangular, trapezoidal, etc., and this application does not limit them in this way.

[0063] It should be noted that when multiple second current blocking layers 32 are circumferentially distributed to form a ring, rectangle, or trapezoid, a second current blocking layer 32 is also grown at the center of the preset shape. The second current blocking layer 32 can block current from flowing directly to the bottom of the P electrode, reducing the current density in and around the active region below the P electrode, alleviating the current congestion effect near the P electrode, allowing more current to diffuse out, and improving both the internal quantum efficiency and light extraction efficiency of the LED light-emitting diode.

[0064] The first current blocking layer 31 gradually widens away from the second current blocking layer 32, meaning it is narrow at one end and wide at the other. The width of the first current blocking layer 31 can be 16.5–50 μm. Preferably, the narrower end of the first current blocking layer 31 has a width of M5 (17.6 μm), and the wider end has a width of M4 (23.3 μm). This design makes it easier for current to dissipate, increasing the lateral transport capability of the current along the transparent conductive layer 4. Furthermore, it effectively reduces the proportion of the current directly below the electrode in the total injected current, thereby reducing the thermal effect caused by this current and improving the light extraction efficiency of the LED. Preferably, the width of the first current blocking layer 31 is 16.5–50 μm.

[0065] like Figure 6 and Figure 10 As shown, the transparent conductive layer 4 can be ITO or similar materials, and includes a first transparent conductive layer 41 and a second transparent conductive layer 42. The first transparent conductive layer 41 is grown on the current blocking layer 4; the second transparent conductive layer 42 is grown on the epitaxial layer 2. In this way, current can be transmitted through the first transparent conductive layer 41 to the second transparent conductive layer 42 and diffuse along the second transparent conductive layer 42.

[0066] like Figure 7 and Figure 10As shown, it should be noted that the first transparent conductive layer 41 may include a hollow conductive ring, which covers a portion of the second current blocking layer 32, so that the hollow portion of the conductive ring can be projected orthogonally onto the area enclosed by the multiple second current blocking layers 32. Specifically, the conductive ring includes multiple inwardly recessed areas 43, so that the first transparent conductive layer 41 has multiple protrusions 44 surrounding the conductive ring. That is, the recesses 43 are formed away from the center of the conductive ring. In this case, the area between two recesses 43 that is not recessed forms the structure of the protrusions 44. Such protrusions 44 are at least partially grown on the second current blocking layers 32. When the second current blocking layers 32 are distributed in a predetermined shape, the first transparent conductive layer 41 may be staggered with the second current blocking layers 32 or stacked. Since the second current blocking layer 32 can prevent some current from flowing directly to the P-Gan layer, that is, through the multiple circumferentially distributed second current blocking layers 32, some current can diffuse along the first transparent conductive layer 41, thereby allowing the current to be transported along the protrusions 44 of the first transparent conductive layer 41 and diffused from the first transparent conductive layer 41 to the second transparent conductive layer 42, increasing the amount of transported current. In this way, the brightness of the LED light-emitting diode can be increased during the current transport process.

[0067] like Figure 2 and Figure 11 As shown, the metal finger electrode 5 is grown in the region where the current blocking layer 3 is projected onto the transparent conductive layer 4. The metal finger electrode 5 has a first end 51 and a second end 52 relative to each other. The width of the metal finger electrode 5 gradually narrows from the first end 51 to the second end 52. The width of the metal finger electrode 5 is smaller than the width of the first current blocking layer 31. A second current blocking layer 32 is distributed around the first end 51 of the metal finger electrode.

[0068] The endpoint of the first end 51 of the metal finger electrode is a P-electrode pad, which can be circular or polygonal, and this application does not limit the specific type of pad. The width between the first end 51 and the second end 52 of the metal finger electrode is 2.5 to 20 μm. Preferably, the width of the middle part of the first end 51 of the metal finger electrode is M1, where M1 is 3.5 μm.

[0069] It should be noted that the width of the first end 51 of the metal finger electrode is greater than the width of the second end 52 of the metal finger electrode. In this way, the current that the first end 51 to the second end 52 of the metal finger electrode can carry gradually decreases. The first end 51 of the metal finger electrode holds more current, and the current diffuses in the same amount. The current diffusion is completed when the current reaches the second end 52 of the metal finger electrode.

[0070] The area of ​​the P electrode pad at the first end 51 of the metal finger electrode is larger than the width of the metal finger electrode 5. This allows more current to be transported when the current reaches the first end 51 of the metal finger electrode through the P electrode. Subsequently, the current will increase as it diffuses along the metal finger electrode 5, thereby increasing the brightness of the LED.

[0071] like Figure 2 and Figure 5 As shown, the length between two points on the second end 52 of the metal finger electrode is 2.5–6.5 μm. Preferably, the width of the middle part of the second end 52 of the metal finger electrode is M2, where M2 is 2 μm. An antistatic portion 53 is provided at the end point of the second end 52 of the metal finger electrode. The shape of the orthographic projection of the antistatic portion 53 can be circular or other shapes, and this application does not limit this. The distance between two points on the antistatic portion 53 is greater than the width of the second end 52 of the metal finger electrode. The antistatic portion 53 can increase the resistance of the second end 52 of the metal finger electrode, avoiding or reducing breakdown of the second end 52 of the metal finger electrode due to the inability to diffuse the current in time when it reaches the second end 52, thereby improving the antistatic capability of the second end 52 of the metal finger electrode.

[0072] In this embodiment, an LED chip utilizes a structure where the first current blocking layer 31 gradually widens away from the second current blocking layer 32, and multiple second current blocking layers 32 are circumferentially distributed. This prevents current on the metal finger electrode 5 from directly migrating from the P-Gan layer to the N-Gan layer through the transparent conductive layer 4, improving the uniformity of current distribution. Furthermore, the width of the metal finger electrode gradually narrows from the first end 51 to the second end 52, increasing current transport capability and improving the brightness of the LED. Additionally, the antistatic portion 53 provided at the second end 52 of the metal finger electrode can prevent or reduce the formation of static electricity due to current not diffusing to the transparent conductive layer 4, increasing antistatic capability and reducing the probability of the metal finger electrode 5 being damaged.

[0073] like Figure 1 and Figure 8 As shown, in some embodiments, the surface of the epitaxial layer 2 includes a first epitaxial layer surface 21 and a second epitaxial layer surface 22. The first epitaxial layer surface 21 has N-type electrode exposed portions 6 grown at two adjacent edges of the epitaxial layer 2, and the second epitaxial layer surface 22 has a second transparent conductive layer 42 grown thereon. The current blocking layer 3 includes a third current blocking layer 33.

[0074] The N-type electrode exposed portion 6 includes a first N-type electrode exposed portion 61 and a second N-type electrode exposed portion 62. The first N-type electrode exposed portion 61 is disposed in the length direction of the epitaxial layer 2 at the end of the epitaxial layer 2 away from the first end 51 of the metal finger electrode. The center of the first N-type electrode exposed portion 61 has a third current blocking layer 33.

[0075] The second N-type electrode exposed portion 62 is provided along the width direction of the epitaxial layer 2.

[0076] It should be noted that the first N-type electrode exposed portion 61 and the second N-type electrode exposed portion 62 are arranged in an "L" shape at the edge of the epitaxial layer. The end of the first N-type electrode exposed portion 61 is enlarged to form an N-type electrode solder joint 63, and a third current blocking layer 33 is grown in the projection area of ​​the enlarged center. The third current blocking layer 33 can block the current, preventing the current from concentrating in the center of the first N-type electrode exposed portion 61, so that the current is dispersed into the N-type electrode solder joint 63. In addition, the second N-type electrode exposed portion 62 can transport the current to the N-type electrode solder joint 63.

[0077] In this embodiment, the second N-type electrode exposed portion 62 is used to transport current to the N-type electrode solder joint 63 of the first N-type electrode exposed portion 61. A third current blocking layer 33 is provided at the N-type electrode solder joint 63 to prevent the current from concentrating in the center of the N-type electrode solder joint 63, so that the current can enter the N-type electrode solder joint 63 around its periphery. In other words, the current enters the N-type electrode solder joint 63 circumferentially. This current transport can increase the brightness of the LED light-emitting diode.

[0078] like Figure 12 As shown, in some embodiments, the LED chip further includes an insulating protective layer 7. The insulating protective layer 7 is grown in the uncovered areas of the epitaxial layer 2, the current blocking layer 3, the transparent conductive layer 4, and the metal finger electrodes 5, and is used to protect the surface of the chip.

[0079] The insulating protective layer 7 can be SiO2, Si3N4, etc. The insulating protective layer 7 can also be a passivation protective layer.

[0080] In some embodiments, the metal finger electrode 5 includes an adhesion layer, a structural layer, and a conductive layer disposed sequentially.

[0081] The adhesion layer is composed of Cr, Ni or Ti, which facilitates growth on the current blocking layer 3.

[0082] The structural layer is composed of Al, Cr, Ti, Pt or Ni, and plays a connecting role between the underlying adhesion layer and the upper conductive layer.

[0083] The conductive layer is composed of Cu, Au, Sn or AuSn and is used for current transport.

[0084] It should be noted that the adhesion layer, structural layer and conductive layer are grown in sequence.

[0085] like Figure 1 As shown, corresponding to the aforementioned embodiments of LED light-emitting diode chips, this application also provides an embodiment of a method for manufacturing an LED light-emitting diode chip. This method for manufacturing an LED light-emitting diode chip includes:

[0086] An epitaxial layer is grown on a substrate 1;

[0087] A current blocking layer 3 is grown on the epitaxial layer;

[0088] A transparent conductive layer 4 is grown on the current blocking layer 3;

[0089] Metal finger electrodes 5 are grown at the orthogonal projection position of the current blocking layer 3 in the transparent conductive layer 4; wherein...

[0090] Substrate 1 is an Al2O3 substrate;

[0091] The current blocking layer 3 includes a first current blocking layer 31 and a second current blocking layer 32. The first current blocking layer 31 grows along the length direction of the epitaxial layer. There are multiple second current blocking layers 32. The multiple second current blocking layers 32 are disposed at one end of the first current blocking layer 31 at intervals. The multiple second current blocking layers 32 are arranged and grown in a preset shape.

[0092] The width of the first current blocking layer 31 gradually increases from one end near the second current blocking layer 32 to the other end away from the second current blocking layer 32.

[0093] The transparent conductive layer 4 includes a first transparent conductive layer 41 and a second transparent conductive layer 42. The first transparent conductive layer 41 is grown on the current blocking layer 3, and the first transparent conductive layer 41 and the second current blocking layer 32 at least partially overlap. The second transparent conductive layer 42 is grown on the epitaxial layer.

[0094] The metal finger electrode 5 is grown in the region where the current blocking layer 3 is projected onto the transparent conductive layer 4. The metal finger electrode 5 has a first metal finger electrode 51 and a second metal finger electrode 52. The width of the metal finger electrode 5 gradually narrows from the first metal finger electrode 51 to the second metal finger electrode 52, and the width of the metal finger electrode 5 is smaller than the width of the first current blocking layer 31. A second current blocking layer 32 is distributed around the first metal finger electrode 51.

[0095] The above embodiments merely illustrate specific implementations of the present invention, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the present invention. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention.

Claims

1. A chip for an LED light-emitting diode, characterized in that, include: A substrate (1), and an epitaxial layer (2), a current blocking layer (3), a transparent conductive layer (4) and a metal finger electrode (5) sequentially grown on the substrate (1); The current blocking layer (3) includes a first current blocking layer (31) and a second current blocking layer (32). The first current blocking layer (31) grows along the length direction of the epitaxial layer (2). There are multiple second current blocking layers (32). The multiple second current blocking layers (32) are disposed at one end of the first current blocking layer (31) at intervals. The multiple second current blocking layers (32) are arranged and grown in a predetermined shape. The first current blocking layer (31) gradually widens in the direction away from the second current blocking layer (32); The transparent conductive layer (4) includes a first transparent conductive layer (41) and a second transparent conductive layer (42). The first transparent conductive layer (41) is grown on the current blocking layer (3) and the first transparent conductive layer (41) and the second current blocking layer (32) overlap at least partially. The second transparent conductive layer (42) is grown on the epitaxial layer (2). The metal finger electrode (5) is grown in the region of the current blocking layer (3) projected onto the transparent conductive layer (4). The metal finger electrode (5) has a first metal finger electrode end (51) and a second metal finger electrode end (52) opposite to each other. The width of the metal finger electrode (5) gradually narrows from the first metal finger electrode end (51) to the second metal finger electrode end (52), and the width of the metal finger electrode (5) is smaller than the width of the first current blocking layer (31). The second current blocking layer (32) is distributed around the first metal finger electrode end (51).

2. The LED light-emitting diode chip as described in claim 1, characterized in that, The endpoint of the first end (51) of the metal finger electrode is a P electrode pad, which is circular or polygonal. The width of the part where the first end (51) of the metal finger electrode and the second end (52) of the metal finger electrode are connected is 2.5 to 20 μm.

3. The LED light-emitting diode chip as described in claim 1, characterized in that, The second end (52) of the metal finger electrode is provided with an antistatic part (53), and the distance between two opposite points of the antistatic part (53) is greater than the width of the metal finger electrode (5); the length between two opposite points of the second end (52) of the metal finger electrode is 2.5 to 6.5 μm.

4. The LED light-emitting diode chip as described in claim 1, characterized in that, The first transparent conductive layer (41) includes a hollow conductive ring that covers a portion of the second current blocking layer (32) so that the hollow portion of the conductive ring can be orthographically projected onto the area enclosed by the plurality of second current blocking layers (32).

5. The LED light-emitting diode chip as described in claim 4, characterized in that, The conductive ring includes a plurality of inward recesses (43) such that the first transparent conductive layer (41) has a plurality of protrusions (44) surrounding the conductive ring, the protrusions (44) being at least partially grown on the second current blocking layer (32).

6. The LED light-emitting diode chip as described in claim 5, characterized in that, The current blocking layer (3) is SiO2 or Si3N4, and the width of the first current blocking layer (31) is 16.5 to 50 μm.

7. The LED light-emitting diode chip as described in claim 1, characterized in that, The surface of the epitaxial layer (2) includes a first epitaxial layer surface (21) and a second epitaxial layer surface (22). The first epitaxial layer surface (21) has N-type electrode exposed portions (6) grown at two adjacent edges of the epitaxial layer (2). The second epitaxial layer surface (22) has a second transparent conductive layer (42). The current blocking layer (3) includes a third current blocking layer (33), wherein... The N-type electrode exposed portion (6) includes a first N-type electrode exposed portion (61) and a second N-type electrode exposed portion (62). The first N-type electrode exposed portion (61) is disposed at the end of the epitaxial layer (2) away from the first end (51) of the metal finger electrode in the length direction of the epitaxial layer (2). The center of the first N-type electrode exposed portion (61) has the third current blocking layer (33). The second N-type electrode exposed portion (62) is provided along the width direction of the epitaxial layer (2).

8. The LED light-emitting diode chip as described in claim 1, characterized in that, It also includes an insulating protective layer (7); the insulating protective layer (7) is grown in the uncovered areas of the epitaxial layer (2), the current blocking layer (3), the transparent conductive layer (4) and the metal finger electrode (5).

9. The LED light-emitting diode chip as described in claim 1, characterized in that, The metal finger electrode (5) comprises an adhesion layer, a structural layer, and a conductive layer arranged sequentially; wherein, The adhesion layer is composed of Cr, Ni or Ti; The structural layer is composed of Al, Cr, Ti, Pt or Ni; The conductive layer is composed of Cu, Au, Sn or AuSn.

10. A method for fabricating an LED light-emitting diode chip, characterized in that, The method for manufacturing the LED light-emitting diode chip according to any one of claims 1-9 includes: An epitaxial layer (2) is grown on a substrate (1); A current blocking layer (3) is grown on the epitaxial layer (2); A transparent conductive layer (4) is grown on the current blocking layer (3); Metal finger electrodes (5) are grown at the orthogonal projection position of the current blocking layer (3) of the transparent conductive layer (4); wherein, The current blocking layer (3) includes a first current blocking layer (31) and a second current blocking layer (32). The first current blocking layer (31) grows along the length direction of the epitaxial layer (2). There are multiple second current blocking layers (32). The multiple second current blocking layers (32) are disposed at one end of the first current blocking layer (31) at intervals. The multiple second current blocking layers (32) are arranged and grown in a predetermined shape. The first current blocking layer (31) gradually widens in the direction away from the second current blocking layer (32); The transparent conductive layer (4) includes a first transparent conductive layer (41) and a second transparent conductive layer (42). The first transparent conductive layer (41) is grown on the current blocking layer (3) and the first transparent conductive layer (41) and the second current blocking layer (32) overlap at least partially. The second transparent conductive layer (42) is grown on the epitaxial layer (2). The metal finger electrode (5) is grown in the region of the current blocking layer (3) projected onto the transparent conductive layer (4). The metal finger electrode (5) has a first metal finger electrode end (51) and a second metal finger electrode end (52) opposite to each other. The width of the metal finger electrode (5) gradually narrows from the first metal finger electrode end (51) to the second metal finger electrode end (52), and the width of the metal finger electrode (5) is smaller than the width of the first current blocking layer (31). The second current blocking layer (32) is distributed around the first metal finger electrode end (51).

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