A high-power miniaturized heterodyne synthesizer

Abstract

The application discloses a kind of high-power miniaturization heterodyne synthesizers, it is characterized in that, the heterodyne synthesizer includes E face Y shape knot (a), first rectangular waveguide input port (b1), second rectangular waveguide input port (b2), rectangular waveguide output port (c), first waveguide band-pass filter (1), second waveguide band-pass filter (2), first stepped transition section (a1) and second stepped transition section (a2).The application adopts E face synthesis, is applicable to certain specific application scene;Shorten the interval of E face diaphragm, reduce overall length, realize its miniaturization under the premise of guaranteeing the high-power performance of heterodyne synthesizer;By adding stepped gradual change structure, while reducing the length of wide side and narrow side of rectangular waveguide of E face Y shape knot, effectively suppress the multiple high-order modes generated in E face synthesis, improve transmission efficiency.

Description

Technical Field

[0001] This invention relates to the field of high-power microwave technology, and in particular to a high-power miniaturized frequency synthesizer. Background Technology

[0002] With the continuous expansion of the application fields and functions of high-power microwaves, the requirements for output power levels are increasing. Power combining technology, as an important technical approach to significantly improve power levels, has attracted increasing attention. From the perspective of the frequency relationship of the synthesized signals, power combining is generally divided into same-frequency combining and different-frequency combining. Different-frequency power combining, also known as beat wave combining, can spatially superimpose two high-power microwaves with similar frequencies. The synthesized wave exhibits a high-frequency wave with low-frequency amplitude modulation, and under appropriate nonlinear effects, the beat wave will generate low-frequency components related to the beat frequency. Therefore, high-power microwave beat waves combine, to some extent, the advantages of high-frequency and low-frequency high-power microwaves. The different-frequency synthesizer is a key component in high-power microwave beat wave combining. Currently, different-frequency synthesizers reported domestically and internationally can be roughly divided into two types: polarization-based different-frequency synthesizers and frequency-based different-frequency synthesizers. Among them, frequency-based different-frequency synthesizers have become an important research direction because they can concentrate the synthesized output energy in the same polarization direction, achieving same-polarization combining, and possessing high power and high combining efficiency.

[0003] In existing research, frequency synthesizers based on frequency synthesis are mostly implemented using circular waveguides or rectangular waveguides H-plane synthesis. However, in certain specific application scenarios, rectangular waveguides E-plane synthesis is required, and no one has proposed such a frequency synthesizer yet. In addition, frequency synthesizers based on frequency synthesis generally have the problem of excessive size in order to achieve high power performance. Summary of the Invention

[0004] To address the aforementioned shortcomings in the prior art, the present invention provides a high-power miniaturized frequency synthesizer that solves the limitations of existing frequency synthesizers in certain specific application scenarios, as well as the problem of excessively large size of frequency synthesizers based on frequency synthesis.

[0005] To achieve the above-mentioned objectives, the present invention employs the following technical solution: a high-power miniaturized heterodyne synthesizer, comprising an E-plane Y-junction, a first rectangular waveguide input port, a second rectangular waveguide input port, a rectangular waveguide output port, a first waveguide bandpass filter, a second waveguide bandpass filter, a first stepped transition section, and a second stepped transition section. The E-plane Y-junction includes two rectangular waveguide slanted arms and one rectangular waveguide straight arm. The two rectangular waveguide slanted arms are respectively connected to the first stepped transition section and the second stepped transition section. The first stepped transition section is connected to the first waveguide bandpass filter, and the second stepped transition section is connected to the second waveguide bandpass filter. The first waveguide bandpass filter is connected to the first rectangular waveguide input port, and the second waveguide bandpass filter is connected to the second rectangular waveguide input port. The first rectangular waveguide input port and the second rectangular waveguide input port are located in the same plane, and the axis of the rectangular waveguide output port is perpendicular to the plane formed by the first rectangular waveguide input port and the second rectangular waveguide input port.

[0006] The beneficial effects of the above solution are as follows: By adopting the above technical solution, E-plane synthesis is used, and the two input ports are parallel to each other, so as to realize the effective synthesis of two signals with similar frequencies. It can meet some special use environments, and has the characteristics of high peak power and miniaturization. It solves the limitations of existing frequency synthesizers in certain specific application scenarios, as well as the problem of excessive size of frequency synthesizers based on frequency synthesis.

[0007] Furthermore, the first waveguide bandpass filter includes a first overmode rectangular waveguide, a first E-plane diaphragm group, and a second E-plane diaphragm group, wherein the first E-plane diaphragm group and the second E-plane diaphragm group are placed inside the first overmode rectangular waveguide.

[0008] The beneficial effect of the above-mentioned further solution is that the above technical solution constitutes the first waveguide bandpass filter.

[0009] Furthermore, the second waveguide bandpass filter includes a second overmode rectangular waveguide, a third E-plane diaphragm group, and a fourth E-plane diaphragm group, wherein the third E-plane diaphragm group and the fourth E-plane diaphragm group are placed inside the second overmode rectangular waveguide.

[0010] The beneficial effect of the above-mentioned further solution is that a second waveguide bandpass filter is constructed through the above technical solution.

[0011] Furthermore, the rectangular waveguide dimension of the E-plane Y-junction is smaller than that of the first and second overmode rectangular waveguides.

[0012] The beneficial effect of the above-mentioned further scheme is that, since the discontinuity of the waveguide will lead to the generation of higher-order modes during the synthesis process, the above-mentioned technical scheme makes the rectangular waveguide in the E-plane Y-junction smaller than the overmode rectangular waveguide, thereby achieving the suppression of higher-order modes.

[0013] Furthermore, the two rectangular waveguide arms of the E-plane Y-junction are curved and have different lengths, and the connection between the two rectangular waveguide arms is chamfered.

[0014] The beneficial effects of the above-mentioned further scheme are: since the two input signals have different frequencies, the two inclined arms also have different lengths accordingly; the connection between the two inclined arms is chamfered to improve its transmission performance.

[0015] Furthermore, the lengths of the first and second step transition sections are different. Both the first and second step transition sections include two-order rectangular waveguides. The two-order rectangular waveguides in the first step transition section have the same length, with the width and narrow sides decreasing sequentially. The two-order rectangular waveguides in the second step transition section have the same length, with the width and narrow sides decreasing sequentially. The four edges of the sides of the two-order rectangular waveguides are all chamfered.

[0016] The beneficial effects of the above-mentioned further solution are: by setting up stepped transition sections of different lengths for the synthesis of different frequencies, and considering the processing problem, chamfering is performed on the four edges of the side of each rectangular waveguide.

[0017] Furthermore, the first waveguide bandpass filter and the second waveguide bandpass filter are parallel to each other, and the narrow walls of the first overmode rectangular waveguide and the second overmode rectangular waveguide are located in the same plane.

[0018] The beneficial effect of the above-mentioned further solution is that the input ports are parallel to each other in the same plane, which meets certain specific usage environments.

[0019] Furthermore, the first E-face mask group and the second E-face mask group have the same structural dimensions, the wide walls of the masks in the first E-face mask group and the second E-face mask group are parallel to each other, and the narrow walls of the masks in the first E-face mask group and the second E-face mask group are located in the same plane.

[0020] The beneficial effect of the above-mentioned further solution is that the spatial positioning of the first E-mask group and the second E-mask group is completed through the above technical solution.

[0021] Furthermore, the first, second, third, and fourth E-face film groups each include five E-face films. These five E-face films are symmetrically distributed with the central E-face film as the center. The central E-face film has the longest length, and the lengths of the two outer E-face films decrease sequentially. The two middle intervals formed by the five E-face films are smaller than the two outer intervals. In the first and second E-face film groups, the wide walls of the E-face films are parallel to the narrow walls of the first through-mode rectangular waveguide. The E-face sheets in the first and second E-face sheet groups have the same thickness. The height of the E-face sheets in the first and second E-face sheet groups is the same as the narrow side length of the first overmode rectangular waveguide. The wide wall of the E-face sheets in the third and fourth E-face sheet groups is parallel to the narrow wall of the second overmode rectangular waveguide. The E-face sheets in the third and fourth E-face sheet groups have the same thickness. The height of the E-face sheets in the third and fourth E-face sheet groups is the same as the narrow side length of the second overmode rectangular waveguide.

[0022] The beneficial effect of the above-mentioned further solution is that the spatial position of the E-plane diaphragm is set through the above technical solution, while ensuring that the E-plane diaphragms in the two waveguide bandpass filters have different characteristics.

[0023] Furthermore, the length, spacing, and placement of the E-plane diaphragms in the first and second waveguide bandpass filters are different.

[0024] The beneficial effect of the above-mentioned further solution is that by setting different lengths, spacing distances and placement positions of the E-plane diaphragms for the two waveguide bandpass filters, the two waveguide bandpass filters can operate in different frequency bands, thereby realizing the transmission and synthesis of two different frequency signals. Attached Figure Description

[0025] Figure 1 This is a schematic diagram of the overall structure of a high-power miniaturized frequency synthesizer.

[0026] Wherein: a, E-plane Y-junction; a1, first stepped transition section; a2, second stepped transition section; b1, first rectangular waveguide input port; b2, second rectangular waveguide input port; c, rectangular waveguide output port; 1, first waveguide bandpass filter; 2, second waveguide bandpass filter; 11, first overmode rectangular waveguide; 12, first E-plane diaphragm group; 13, second E-plane diaphragm group; 21, second overmode rectangular waveguide; 22, third E-plane diaphragm group; 23, fourth E-plane diaphragm group.

[0027] Figure 2 The figure shows the simulation results of the reflection loss of the frequency synthesizer.

[0028] Figure 3The figure shows the simulation results of the transmission loss of the frequency synthesizer.

[0029] Figure 4 The figure shows the simulation results of the isolation between the two input ports of the frequency synthesizer.

[0030] Figure 5 The electric field intensity distribution diagram is shown for a frequency-differentiated synthesizer at 9.3 GHz.

[0031] Figure 6 The diagram shows the electric field intensity distribution of a frequency-differential synthesizer at 9.7 GHz. Detailed Implementation

[0032] The present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0033] like Figure 1 As shown, a high-power miniaturized frequency synthesizer is characterized in that the frequency synthesizer includes an E-plane Y-junction a, a first rectangular waveguide input port b1, a second rectangular waveguide input port b2, a rectangular waveguide output port c, a first waveguide bandpass filter 1, a second waveguide bandpass filter 2, a first stepped transition section a1, and a second stepped transition section a2. The E-plane Y-junction a includes two rectangular waveguide slanted arms and one rectangular waveguide straight arm. The two rectangular waveguide slanted arms are respectively connected to the first stepped transition section a1 and the second stepped transition section a2. The stepped transition section a1 is connected to the first waveguide bandpass filter 1, and the second stepped transition section a2 is connected to the second waveguide bandpass filter 2. The first waveguide bandpass filter 1 is connected to the first rectangular waveguide input port b1, and the second waveguide bandpass filter 2 is connected to the second rectangular waveguide input port b2. The first rectangular waveguide input port b1 and the second rectangular waveguide input port b2 are located in the same plane, and the axis of the rectangular waveguide output port c is perpendicular to the plane formed by the first rectangular waveguide input port b1 and the second rectangular waveguide input port b2.

[0034] In this embodiment, the overall length of the frequency synthesizer is 220.96 mm, the height is 46 mm, and the thickness is 89.35 mm.

[0035] The first waveguide bandpass filter 1 includes a first overmode rectangular waveguide 11, a first E-plane diaphragm group 12, and a second E-plane diaphragm group 13, wherein the first E-plane diaphragm group 12 and the second E-plane diaphragm group 13 are placed inside the first overmode rectangular waveguide 11.

[0036] The second waveguide bandpass filter 2 includes a second overmode rectangular waveguide 21, a third E-plane diaphragm group 22, and a fourth E-plane diaphragm group 23, wherein the third E-plane diaphragm group 22 and the fourth E-plane diaphragm group 23 are placed inside the second overmode rectangular waveguide 21.

[0037] The rectangular waveguide dimension of the E-plane Y-shaped junction a is smaller than that of the first overmode rectangular waveguide 11 and the second overmode rectangular waveguide 21.

[0038] In the E-plane Y-junction a, the discontinuity of the waveguide will cause higher-order modes to be generated during the synthesis process. Therefore, the rectangular waveguide constituting the E-plane Y-junction a needs to have a smaller size than the overmode rectangular waveguide of the waveguide bandpass filter in order to suppress the generated higher-order modes. Therefore, in this embodiment, its wide side length is 30mm and its narrow side length is 16mm.

[0039] The two rectangular waveguide arms of the E-plane Y-shaped junction a are curved and have different lengths. The connection between the two rectangular waveguide arms is chamfered.

[0040] The lengths of the first step transition segment a1 and the second step transition segment a2 are different. Both the first step transition segment a1 and the second step transition segment a2 include two-order rectangular waveguides. The two-order rectangular waveguides of the first step transition segment a1 have the same length, with the length of the wide side and the length of the narrow side decreasing sequentially. The two-order rectangular waveguides of the second step transition segment a2 have the same length, with the length of the wide side and the length of the narrow side decreasing sequentially. The four edges of the sides of the two-order rectangular waveguides are all chamfered.

[0041] The first waveguide bandpass filter 1 and the second waveguide bandpass filter 2 are parallel to each other, and the narrow walls of the first overmode rectangular waveguide 11 and the second overmode rectangular waveguide 21 are located in the same plane.

[0042] In this embodiment, the wide side length of both overmode rectangular waveguides is 26mm and the narrow side length is 23mm.

[0043] The first E-mask group 12 and the second E-mask group 13 have the same structural dimensions. The wide walls of the films in the first E-mask group 12 and the second E-mask group 13 are parallel to each other, and the narrow walls of the films in the first E-mask group 12 and the second E-mask group 13 are located in the same plane.

[0044] The first E-face sheet group 12, the second E-face sheet group 13, the third E-face sheet group 22, and the fourth E-face sheet group 23 each include 5 E-face sheets. These 5 E-face sheets are symmetrically distributed with the middle E-face sheet as the center. The middle E-face sheet has the longest length, and the lengths of the E-face sheets on both sides decrease sequentially. The two middle intervals formed by the 5 E-face sheets are smaller than the two intervals on both sides. The wide walls of the E-face sheets in the first E-face sheet group 12 and the second E-face sheet group 13 are parallel to the narrow walls of the first through-mode rectangular waveguide 11. The E-sheets in the second E-sheet group 13 have the same thickness. The height of the E-sheets in the first E-sheet group 12 and the second E-sheet group 13 is the same as the narrow side length of the first overmode rectangular waveguide 11. The wide wall of the E-sheets in the third E-sheet group 22 and the fourth E-sheet group 23 is parallel to the narrow wall of the second overmode rectangular waveguide 21. The E-sheets in the third E-sheet group 22 and the fourth E-sheet group 23 have the same thickness. The height of the E-sheets in the third E-sheet group 22 and the fourth E-sheet group 23 is the same as the narrow side length of the second overmode rectangular waveguide 21.

[0045] The length, spacing, and placement of the E-plane diaphragms in the first waveguide bandpass filter 1 and the second waveguide bandpass filter 2 are different.

[0046] In one embodiment of the present invention, the first waveguide bandpass filter 1 operates at a frequency of 9.3 GHz, and its E-plane diaphragm lengths from the middle diaphragm to both sides are 10.52 mm, 6.85 mm, and 3 mm, respectively, with diaphragm spacings from the middle to both sides of 11.98 mm and 12.02 mm, respectively. The second waveguide bandpass filter 2 operates at a frequency of 9.7 GHz, and its E-plane diaphragm lengths from the middle diaphragm to both sides are 10.38 mm, 7.91 mm, and 1.43 mm, respectively, with diaphragm spacings from the middle to both sides of 4.66 mm and 6.04 mm, respectively. The two waveguide bandpass filters operate in two different frequency bands, achieving high isolation between the two input ports, thereby enabling the transmission and synthesis of two different frequency signals.

[0047] In the first step transition section a1, both rectangular waveguides are 8.21 mm long. The first-stage rectangular waveguide has a wide side length of 40 mm and a narrow side length of 20 mm, while the second-stage rectangular waveguide has a wide side length of 34.6 mm and a narrow side length of 18 mm. In the second step transition section a2, both rectangular waveguides are 8.61 mm long, and the wide and narrow side lengths are the same as in the first step transition section a1. Considering fabrication issues, chamfers with a radius of 2 mm are applied to the four edges on the sides of each rectangular waveguide.

[0048] In this embodiment, sinusoidal signals with frequencies of 9.3 GHz and 9.7 GHz are input to the two input ports respectively. The two signals pass through the first waveguide bandpass filter 1 and the second waveguide bandpass filter 2 respectively, and are finally synthesized at the E-plane Y-shaped junction a.

[0049] Simulation results of S-parameter data for the frequency synthesizer are as follows: Figure 2 , 3 As shown in Figure 4, the reflection coefficient S is [value missing] at frequencies of 9.3 GHz and 9.7 GHz. 11 and S 22 All values ​​are less than -20dB, indicating good matching performance; transmission coefficient S 31 and S 32 Both are greater than -0.1dB, indicating high transmission efficiency; the isolation S between the two input ports is... 21 With a value of -18dB, good isolation is achieved.

[0050] Simulation results of electric field strength data of the frequency synthesizer are as follows: Figure 5 , 6 As shown, at 9.3 GHz, the maximum electric field strengths on the waveguide bandpass filter and the E-plane Y-junction are 2921 V / m and 2077 V / m, respectively; at 9.7 GHz, the maximum electric field strengths on the waveguide bandpass filter and the E-plane Y-junction are 3765 V / m and 2207 V / m, respectively. Since the E-plane Y-junction needs to withstand four times the power of the waveguide bandpass filter when both input ports are simultaneously connected, the power capacities of the frequency synthesizer at 9.3 GHz and 9.7 GHz are 370.89 MW and 328 MW, respectively. The results show that the frequency synthesizer proposed in this scheme has the characteristics of high power capacity, good matching, low insertion loss, miniaturization, and simple and compact structure.

[0051] This invention employs E-plane synthesis, with input ports parallel to each other in the same plane, making it suitable for certain specific operating environments. By reducing the spacing of the E-plane diaphragms in the waveguide bandpass filter, the overall size is reduced while maintaining high power capacity, resulting in a simple and compact structure and miniaturization of the high-power frequency synthesizer.

[0052] Those skilled in the art will recognize that the embodiments described herein are intended to help the reader understand the principles of the invention, and should be understood that the scope of protection of the invention is not limited to such specific statements and embodiments. Those skilled in the art can make various other specific modifications and combinations based on the technical teachings disclosed in this invention without departing from the spirit of the invention, and these modifications and combinations are still within the scope of protection of the invention.

Claims

1. A high-power miniaturized frequency synthesizer, characterized in that, The frequency synthesizer includes an E-plane Y-junction (a), a first rectangular waveguide input port (b1), a second rectangular waveguide input port (b2), a rectangular waveguide output port (c), a first waveguide bandpass filter (1), a second waveguide bandpass filter (2), a first stepped transition section (a1), and a second stepped transition section (a2). The E-plane Y-junction (a) includes two rectangular waveguide slanted arms and one rectangular waveguide straight arm. The two rectangular waveguide slanted arms are respectively connected to the first stepped transition section (a1) and the second stepped transition section (a2). The first stepped transition section (a1) is connected to the first waveguide input port (b2). The first waveguide bandpass filter (1) is connected to the second waveguide bandpass filter (2), the second waveguide bandpass filter (2) is connected to the first rectangular waveguide input port (b1), and the second waveguide bandpass filter (2) is connected to the second rectangular waveguide input port (b2). The first rectangular waveguide input port (b1) and the second rectangular waveguide input port (b2) are located in the same plane, and the axis of the rectangular waveguide output port (c) is perpendicular to the plane formed by the first rectangular waveguide input port (b1) and the second rectangular waveguide input port (b2). The lengths of the first stepped transition section (a1) and the second stepped transition section (a2) are different. Both the first stepped transition section (a1) and the second stepped transition section (a2) include two-order rectangular waveguides. The two-order rectangular waveguides of the first stepped transition section (a1) have the same length, with the length of the wide side and the length of the narrow side decreasing sequentially. The two-order rectangular waveguides of the second stepped transition section (a2) have the same length, with the length of the wide side and the length of the narrow side decreasing sequentially. The four edges of the sides of the two-order rectangular waveguides are all chamfered.

2. The high-power miniaturized frequency synthesizer according to claim 1, characterized in that, The first waveguide bandpass filter (1) includes a first overmode rectangular waveguide (11), a first E-plane diaphragm group (12), and a second E-plane diaphragm group (13), with the first E-plane diaphragm group (12) and the second E-plane diaphragm group (13) placed inside the first overmode rectangular waveguide (11).

3. The high-power miniaturized frequency synthesizer according to claim 2, characterized in that, The second waveguide bandpass filter (2) includes a second overmode rectangular waveguide (21), a third E-plane diaphragm group (22) and a fourth E-plane diaphragm group (23), wherein the third E-plane diaphragm group (22) and the fourth E-plane diaphragm group (23) are placed inside the second overmode rectangular waveguide (21).

4. The high-power miniaturized frequency synthesizer according to claim 3, characterized in that, The rectangular waveguide dimension of the E-plane Y-shaped junction (a) is smaller than that of the first overmode rectangular waveguide (11) and the second overmode rectangular waveguide (21).

5. The high-power miniaturized frequency synthesizer according to claim 4, characterized in that, The two rectangular waveguide arms of the E-plane Y-shaped junction (a) are curved and have different lengths. The connection between the two rectangular waveguide arms is chamfered.

6. The high-power miniaturized frequency synthesizer according to claim 5, characterized in that, The first waveguide bandpass filter (1) and the second waveguide bandpass filter (2) are parallel to each other, and the narrow walls of the first overmode rectangular waveguide (11) and the second overmode rectangular waveguide (21) are located in the same plane.

7. The high-power miniaturized frequency synthesizer according to claim 6, characterized in that, The first E-face mask group (12) and the second E-face mask group (13) have the same structural dimensions. The wide walls of the masks in the first E-face mask group (12) and the second E-face mask group (13) are parallel to each other, and the narrow walls of the masks in the first E-face mask group (12) and the second E-face mask group (13) are located in the same plane.

8. The high-power miniaturized frequency synthesizer according to claim 7, characterized in that, The first E-plane sheet group (12), the second E-plane sheet group (13), the third E-plane sheet group (22), and the fourth E-plane sheet group (23) each include 5 E-plane sheets. The 5 E-plane sheets are symmetrically distributed with the middle E-plane sheet as the center. The middle E-plane sheet has the longest length, and the lengths of the E-plane sheets on both sides decrease sequentially. The two middle intervals formed by the 5 E-plane sheets are smaller than the two intervals on both sides. The wide walls of the E-plane sheets in the first E-plane sheet group (12) and the second E-plane sheet group (13) are parallel to the narrow walls of the first overmode rectangular waveguide (11). The thickness of the E-sheets in the sheet group (13) is the same. The height of the E-sheets in the first E-sheet group (12) and the second E-sheet group (13) is the same as the narrow side length of the first overmode rectangular waveguide (11). The wide wall of the E-sheets in the third E-sheet group (22) and the fourth E-sheet group (23) is parallel to the narrow wall of the second overmode rectangular waveguide (21). The thickness of the E-sheets in the third E-sheet group (22) and the fourth E-sheet group (23) is the same. The height of the E-sheets in the third E-sheet group (22) and the fourth E-sheet group (23) is the same as the narrow side length of the second overmode rectangular waveguide (21).

9. The high-power miniaturized frequency synthesizer according to claim 8, characterized in that, The length, spacing, and placement of the E-plane diaphragm are different in the first waveguide bandpass filter (1) and the second waveguide bandpass filter (2).

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