Surface acoustic wave sensor assembly

Abstract

A sensor device includes an integrated sensor assembly having a surface acoustic wave (SAW) sensor disposed on a piezoelectric substrate. The SAW sensor is adapted to measure an environmental condition of an environment in response to an RF signal. The SAW sensor includes an interdigital transducer (IDT) formed on a substrate having at least one layer of piezoelectric material. The SAW sensor includes one or more SAW reflectors of a second IDT formed on the piezoelectric material. The SAW sensor further includes an RF antenna formed on the piezoelectric material. The SAW sensor and the RF antenna are integrated with one another on the piezoelectric material.

Description

Technical Field

[0001] Some embodiments of this disclosure generally relate to sensor devices having surface acoustic wave (SAW) sensor components to measure environmental conditions of the environment. Background Technology

[0002] Surface acoustic waves (SAWs) are sound waves that travel parallel to the surface of an elastic material. The general mathematical description of SAWs was first reported by Lord Rayleigh in 1855, but their application in electronic devices was not developed until 1965 by White and Voltmer using interdigital transducers on piezoelectric materials. SAWs are used in electronic devices, particularly in RF / IF filters. The conversion from electrical energy to mechanical energy (in the form of SAWs) is achieved by using piezoelectric materials. Piezoelectric materials are materials capable of generating internal charges from mechanical stress and generating mechanical strain internally in response to an applied electric field. SAW transducers are often used on the surface of piezoelectric materials to convert electrical energy into mechanical energy (e.g., SAWs) and vice versa. SAW devices can use SAWs in electronic components to provide a variety of different functions, including delay lines, filters, resonators, correlators, transducers, sensors, and the like. SAW devices can be mounted on a chip to perform the corresponding functions of an SAW device. Summary of the Invention

[0003] Some embodiments described herein cover a sensor device including an integrated sensor assembly having a surface acoustic wave (SAW) sensor disposed on a substrate having at least one layer of piezoelectric material. The SAW sensor can be adapted to measure environmental conditions based on detecting SAW properties in response to receiving an incident radio frequency (RF) signal. The SAW sensor may include an interdigitated transducer (IDT) formed on the piezoelectric material. The IDT can generate SAW based on environmental conditions in response to receiving an incident RF signal. The SAW sensor may include one or more SAW reflectors communicating with the IDT. The SAW sensor may include another IDT to receive the SAW wave and generate an emitted RF signal. The SAW sensor assembly may further include an RF antenna and a matching circuit. The matching circuit may be connected to the RF antenna and the IDT. The SAW sensor, RF antenna, and matching circuit may be integrated with each other on the piezoelectric material.

[0004] In several other embodiments, the sensor assembly may include a second IDT that receives the SAW from the first IDT and generates an oscillating potential associated with the acoustic frequency of the received SAW. This oscillating potential may include information associated with environmental conditions measured across a region of the surface of a piezoelectric substrate or piezoelectric layer. The sensor assembly may include a second RF antenna and a second matching circuit to output an emitted RF signal associated with the oscillating potential.

[0005] In several example embodiments, a method for manufacturing a sensor device is disclosed. The method may include fabricating an integrated sensor assembly by depositing a first conductive structure onto a substrate having at least one layer of piezoelectric material, wherein the first conductive structure forms a radio frequency (RF) antenna. The method may further include depositing a second conductive structure onto the piezoelectric material, wherein the second conductive structure forms a matching circuit connected to the RF antenna. The method may further include depositing a third conductive structure onto the piezoelectric material, wherein the third conductive structure forms an interdigital transducer (IDT) connected to the RF antenna, wherein the IDT is a component of a surface acoustic wave (SAW) sensor. The method may further include depositing a fourth conductive structure onto the piezoelectric material, wherein the fourth conductive structure forms at least one of: a) one or more SAW reflectors or b) a second IDT. In some embodiments, the first conductive structure, the second conductive structure, the third conductive structure, and / or the fourth conductive structure may be formed together in a single deposition operation.

[0006] In some embodiments, the sensor assembly may include a SAW sensor suitable for measuring environmental conditions in response to receiving an incident RF signal. The SAW sensor may include at least one layer of piezoelectric material disposed on a substrate. The SAW sensor may further include a first IDT formed on the piezoelectric substrate, wherein the first IDT operates at a fundamental resonant frequency. The SAW sensor may include a dielectric coating having a thickness or material associated with a shift in the fundamental resonant frequency, wherein the first IDT having the dielectric coating has an adjusted resonant frequency.

[0007] In several example embodiments, a method for fabricating a sensor assembly is disclosed. The method may begin by fabricating a SAW sensor by depositing a conductive layer onto a piezoelectric substrate, wherein the conductive layer forms an interdigital transducer (IDT) of the SAW sensor. The IDT has a fundamental resonant frequency, for example, based on the pitch between the interdigitates in the IDT. The method may continue by tuning the resonant frequency of the IDT by depositing a dielectric coating having a material thickness on the conductive layer, wherein at least the thickness or material is associated with a shift in the fundamental resonant frequency, wherein the IDT with the dielectric coating has a tunable resonant frequency.

[0008] In several other embodiments, the sensor assembly may include one or more SAW sensors suitable for measuring environmental conditions in response to receiving an incident RF signal. A first SAW sensor may include a substrate having at least one layer of piezoelectric material and a first IDT formed on the piezoelectric material. The first IDT may include two comb-shaped electrodes containing interlocking conductive interdigitates arranged in a first arrangement. The interlocking conductive interdigitates in the first arrangement generate signal modulation of the signal received by the IDT. The signal modulation identifies the SAW sensor.

[0009] In several other embodiments, the sensor assembly may include a SAW sensor disposed on a substrate having at least one layer of piezoelectric material. The SAW may be adapted to measure environmental conditions in response to receiving an incident RF signal. The SAW sensor may include an IDT formed on the piezoelectric material. The IDT generates SAW based on environmental conditions in response to receiving the incident RF signal. The SAW sensor may further include an assembly of SAW reflectors arranged spatially such that SAW reflected from the SAW reflectors propagates back to the IDT with signal modulation that identifies the SAW sensor. Attached Figure Description

[0010] This disclosure is illustrated by way of example in the accompanying drawings and is not intended to be limiting, in which similar reference numerals indicate similar elements. It should be noted that different references to "an" or "one" embodiments in this disclosure are not necessarily the same embodiments, and such references imply at least one.

[0011] Figure 1 A simplified top view of an example processing system according to aspects of this disclosure is shown.

[0012] Figure 2 This is a top perspective view of a sensor device including an integrated SAW sensor assembly, based on aspects of this disclosure.

[0013] Figures 3A to 3B Various embodiments of a SAW sensor assembly according to aspects of this disclosure are described.

[0014] Figure 4 This is a flowchart of a method for manufacturing a SAW sensor assembly according to aspects of this disclosure.

[0015] Figures 5A to 5B This is a top perspective view of various embodiments of a SAW sensor with a dielectric coating according to aspects of this disclosure.

[0016] Figure 6It is a graph depicting the frequency shift in the fundamental resonant frequency of the SAW sensor according to aspects of this disclosure.

[0017] Figure 7 This is a top perspective view of a sensor device according to aspects of this disclosure.

[0018] Figure 8 This is a flowchart of a method for manufacturing a SAW sensor assembly according to aspects of this disclosure.

[0019] Figures 9A to 9C Various embodiments of the electrode arrangement of the IDT of the SAW sensor according to aspects of this disclosure are described.

[0020] Figures 10A to 10B Various spatial arrangements of SAW reflectors for SAW sensors according to aspects of this disclosure are depicted.

[0021] Figures 11 to 14 This is a top perspective view of various embodiments of the sensor device according to aspects of this disclosure. Detailed Implementation

[0022] Various embodiments of this disclosure provide sensor devices including SAW sensor assemblies and related methods for manufacturing SAW sensor assemblies. SAW sensor assemblies may include conductive components, such as antennas, circuitry, and / or interdigital transducers (IDTs) disposed on a substrate having at least one layer of piezoelectric material. SAW sensor assemblies may be formed, for example, on a piezoelectric substrate or on another type of substrate (such as a semiconductor substrate having a piezoelectric layer thereon). The SAW sensor receives an incident RF signal and generates SAW to measure environmental conditions, such as the pressure and temperature of the environment (e.g., the surface of the piezoelectric substrate or piezoelectric layer). The various disclosed embodiments provide methods for passively measuring environmental conditions (e.g., without active devices, such as power supplies), performing measurements over a surface area of ​​the piezoelectric substrate or piezoelectric layer, finely tuning the SAW sensor, and / or distinguishing between individual SAW sensors in a sensor assembly.

[0023] Various embodiments may be or employ devices with sensor assemblies including a SAW sensor disposed on a substrate having at least one layer of piezoelectric material (e.g., on a piezoelectric substrate or on a piezoelectric layer disposed on the substrate), and are suitable for measuring environmental conditions in response to receiving incident RF signals. The SAW sensor may include an antenna, matching circuitry, and interdigital transducers (IDTs) disposed on the surface of the piezoelectric material. The SAW sensor can generate SAW to measure environmental conditions without using active circuitry (e.g., via a battery-powered CMOS device). The antenna, matching circuitry, and interdigital transducers may be integrated with each other on the piezoelectric material.

[0024] In one example, the sensor device includes an integrated sensor assembly with a SAW sensor disposed on a piezoelectric substrate. The SAW sensor is suitable for measuring environmental conditions in response to receiving an incident radio frequency (RF) signal. The SAW sensor may include an integrated current generation device (IDT) formed on the piezoelectric substrate. The IDT may generate a SAW based on environmental conditions (e.g., having at least one of amplitude, frequency, time delay, phase, or wavelength depending on the environmental conditions) in response to receiving the incident RF signal. The SAW sensor may include one or more SAW reflectors that reflect the SAW back to the IDT. The IDT may then generate a new outgoing RF signal based on the received reflected SAW. For example, the IDT may generate an oscillating potential associated with the acoustic frequency of the reflected SAW. This oscillating potential may include information associated with environmental conditions measured across a region of the piezoelectric material surface. The SAW sensor assembly may further include an RF antenna and matching circuitry attached to a first IDT. The matching circuitry may be connected to the RF antenna and the first IDT. The SAW sensor, RF antenna, and matching circuitry may be integrated with each other on the piezoelectric material.

[0025] In some embodiments, the sensor assembly may include a SAW sensor with two IDTs separated by the surface of a piezoelectric substrate or a piezoelectric layer on the substrate. A first IDT may be used to receive an incident RF signal and generate a SAW signal that propagates along the surface of the piezoelectric substrate or piezoelectric layer to the other IDT. The other IDT may receive the SAW signal and generate an oscillating potential associated with the acoustic frequency of the SAW. This oscillating potential may include information associated with measured environmental conditions (e.g., temperature, pressure, or the like), wherein the environment includes the region between the IDTs. Each IDT may be coupled to an RF antenna via a matching circuit.

[0026] In one example, in addition to or instead of including one or more reflectors, the SAW sensor may include two IDTs (one for generating the SAW and the other for receiving the SAW and generating a new emitted RF signal from that IDT). An additional IDT generates an oscillating potential associated with the acoustic frequency of the received SAW. This oscillating potential may include information associated with environmental conditions measured across a region of the surface of a piezoelectric material (e.g., a piezoelectric substrate or piezoelectric layer). In several embodiments including a second IDT, the SAW sensor assembly may further include a second RF antenna for outputting the new emitted RF signal and a second matching circuit coupled to the second RF antenna and the additional IDT. The second RF antenna and the second matching circuit may be integrated with each other and with the SAW sensor, RF antenna, and matching circuitry on the piezoelectric material.

[0027] In several example embodiments, a method for manufacturing a sensor device is disclosed. The method may include manufacturing an integrated sensor assembly by depositing a first conductive structure onto a substrate having at least one layer of piezoelectric material, wherein the first conductive structure forms a radio frequency (RF) antenna. The method may further include depositing a second conductive structure onto the piezoelectric material, wherein the second conductive structure forms a matching circuit connected to the RF antenna. The method may further include depositing a third conductive structure onto the piezoelectric material, wherein the third conductive structure forms an interdigital transducer (IDT) connected to the RF antenna, wherein the IDT is a component of a surface acoustic wave (SAW) sensor. The method may further include depositing a fourth conductive structure onto the piezoelectric material, wherein the fourth conductive structure forms at least one of: a) one or more SAW reflectors or b) a second IDT. In some embodiments, the first conductive structure, the second conductive structure, the third conductive structure, and / or the fourth conductive structure are formed together in a single deposition operation. Alternatively, multiple deposition operations may be performed, wherein each deposition operation forms one or more of the first conductive structure, the second conductive structure, the third conductive structure, and the fourth conductive structure. In several embodiments, these conductive structures may each be a planar conductor. By manufacturing a sensor device that incorporates all components into an integrated unit, it becomes possible to use smaller sensor devices, which in turn reduces manufacturing costs, time, and the number of manufacturing steps required.

[0028] In several embodiments, the sensor assembly includes a SAW sensor having a first IDT disposed on a piezoelectric material operating at a fundamental resonant frequency. The first IDT may include a dielectric coating having a thickness and / or material associated with a shift in the fundamental resonant frequency, wherein the first IDT with the dielectric coating has an tunable resonant frequency. In another embodiment, the sensor assembly may include various SAW sensors, each having an IDT having a dielectric coating of different thicknesses and / or materials that results in each respective IDT having a different tunable resonant frequency. Each unique frequency allows a reader to receive and distinguish emitted RF signals generated by different SAW sensors. This enables the manufacture of a sensor wafer including multiple (e.g., 5 to 20 or more) SAW sensors disposed on the same sensor wafer. Signals generated by each of the SAW sensors on the sensor wafer can be received by a reader. The reader (or a controller connected to the reader) can then determine which SAW sensor generated each particular emitted RF signal based on the frequency of this emitted RF signal. This allows the detector and / or controller to determine different environmental conditions at different locations across the sensor wafer.

[0029] In several example embodiments, methods for fabricating sensor assemblies are disclosed. The method may begin by fabricating a SAW sensor by depositing a conductive layer onto a piezoelectric substrate, wherein the conductive layer forms an interdigital transducer (IDT) of the SAW sensor. The IDT has a fundamental resonant frequency, for example, based on the pitch between the interdigitates in the IDT. The method may continue by tuning the resonant frequency of the IDT by depositing a dielectric coating having a material thickness on the conductive layer, wherein at least the thickness or material is associated with a shift in the fundamental resonant frequency, wherein the IDT with the dielectric coating has a tunable resonant frequency.

[0030] In some embodiments, the sensor assembly has a SAW sensor including an IDT having two comb electrodes comprising interlocking conductive interdigitates in an arrangement. The arrangement of the interlocking conductive interdigitates can generate signal modulation of the signal transmitted through the IDT. This signal modulation can identify the SAW sensor. Alternatively, the sensor assembly may have a SAW sensor comprising an IDT and an assembly of SAW reflectors having a spatial arrangement that causes the reflected SAW to have signal modulation that identifies the SAW sensor.

[0031] In one example, a sensor assembly may include multiple SAW sensors suitable for measuring environmental conditions in response to receiving an incident RF signal. A first SAW sensor may include a piezoelectric substrate and a first IDT formed on the piezoelectric substrate. The first IDT may include two comb electrodes containing interlocked conductive interdigits arranged in a first arrangement. The interlocked conductive interdigits in the first arrangement generate signal modulation of the signal received by the IDT. The signal modulation identifies the SAW sensor. A second SAW sensor may include a second IDT formed on the piezoelectric substrate (or on a different piezoelectric substrate). The second IDT may include two comb electrodes containing interlocked conductive interdigits arranged in a second arrangement. The interlocked conductive interdigits in the second arrangement generate a second signal modulation of the signal received by the second IDT. The second signal modulation identifies the second SAW sensor. Therefore, the RF signals output by the first and second SAW sensors can be identified based on the signal modulation associated with the RF signals. This makes it possible to manufacture a sensor wafer including multiple (e.g., 5 to 20 or more) SAW sensors disposed on the same sensor wafer. The signal generated by each of the SAW sensors on the sensor wafer can be received by a reader. The reader (or the controller connected to the reader) can then determine which SAW sensor generates each specific RF signal based on the frequency of the RF signal. This allows the detector and / or controller to determine different environmental conditions at different locations across the sensor wafer.

[0032] Any of the embodiments disclosed above can be combined. For example, the sensor chip may include a first SAW sensor having a first arrangement of interdigitated fingers of an IDT and / or a first arrangement of reflectors, and a second SAW sensor having a second arrangement of interdigitated fingers of an IDT and / or a second arrangement of reflectors, and a second dielectric coating, an IDT, and / or a second arrangement of reflectors. The first and second SAW sensors may each be part of a corresponding integrated sensor assembly including a respective antenna and a matching network. In some embodiments, the integrated sensor assembly of multiple SAW sensors is included on a shared piezoelectric substrate or other substrate on which a piezoelectric layer is disposed.

[0033] These and similar implementations offer numerous advantages and improvements in the fabrication and signal processing of sensor assemblies, such as SAW sensors and sensor wafers that include one or more SAW sensors disposed on a sensor wafer. These advantages include improvements to SAW sensor assemblies, such as improved SAW sensor performance, wider applicability of SAW sensors, increased signal variation between SAW sensors, and reduced manufacturing costs and complexity of SAW sensors.

[0034] For example, sensor performance can be improved by using sensor assemblies employing passive circuitry (e.g., SAW sensors). Passive circuitry allows for the measurement of environmental conditions at more extreme levels (e.g., high temperatures and high pressures) by being freed from the specification limitations of active devices. For example, the broader applicability of SAW sensors can be achieved by using an IDT coupled to a single antenna. An IDT coupled to a single antenna can be used to measure environmental conditions across a wider range of environments by transmitting SAW across a wide area of ​​the IDT arranged across a piezoelectric substrate. For example, the increased signal difference between SAW sensors can be achieved by using sensor assemblies made of SAW sensors that are tuned to operate at different frequencies by applying a dielectric coating having a unique thickness or material. Alternatively or additionally, SAW sensors can generate unique signal modulation on the signal transmitted through each respective SAW sensor. Signal modulation can be generated using an arrangement of interlocking conductive interdigitates of the IDT electrodes and / or a spatial arrangement of the SAW reflectors.

[0035] Figure 1A simplified top view of an example processing system 100 according to aspects of this disclosure is shown. The processing system 100 includes a fab interface 91 to which multiple substrate pods 102 (e.g., front opening pods (FOUPs) and side storage pods (SSPs)) are coupled for transferring substrates (e.g., wafers such as silicon wafers) into the processing system 100. FOUPs, SSPs, and other substrate pods may be collectively referred to herein as storage locations. In some embodiments, in addition to or instead of the wafer to be processed, one or more substrate pods 102 may include one or more sensor wafers 110 on which SAW sensor assemblies are disposed or integrated. The SAW sensor assemblies of the sensor wafers 110 can be used to measure environmental conditions (e.g., temperature, pressure, or the like). For example, sensor wafers 110 can be used to measure environmental conditions within one or more processing chambers 107 and other compartments, as will be discussed. As will be explained, the factory interface 91 can also use the same functions used for passing the sensor chip 110 to and from the processing system 100 as for passing the chip to be processed and / or already processed.

[0036] The processing system 100 may also include first vacuum ports 103a, 103b that can couple the factory interface 91 to corresponding stations 104a, 104b, which may be, for example, degassing chambers and / or loading locks. Second vacuum ports 105a, 105b may be coupled to corresponding stations 104a, 104b and are disposed between stations 104a, 104b and transfer chamber 106 to facilitate the transfer of substrates into transfer chamber 106. Transfer chamber 106 includes a plurality of processing chambers 107 (also referred to as processing chambers) disposed around and coupled to transfer chamber 106. Processing chambers 107 are coupled to transfer chamber 106 through corresponding ports 108 (such as slit valves or the like).

[0037] Processing chamber 107 may include one or more of the following: etching chamber, deposition chamber (including atomic layer deposition, chemical vapor deposition, physical vapor deposition, or plasma-enhanced versions thereof), annealing chamber, and / or the like. Processing chamber 107 may include, for example, chamber components such as nozzles or suction cups (e.g., electrostatic suction cups).

[0038] In various embodiments, factory interface 91 includes factory interface robot 111. Factory interface robot 111 may include robotic arms, which may be or include selective compliance assembly robot arms (SCARA) robots, such as 2-link SCARA robots, 3-link SCARA robots, 4-link SCARA robots, etc. Factory interface robot 111 may include end effectors at the ends of the robotic arms(s). The end effectors may be configured to pick up and handle specific objects, such as wafers. Factory interface robot 111 may be configured to transfer objects between substrate cassette 102 (e.g., FOUP and / or SSP) and stations 104a, 104b (e.g., stations 104a, 104b may be loading locks).

[0039] The transfer chamber 106 includes a transfer chamber robot 112. The transfer chamber robot 112 may include a robotic arm with an end effector at its end. The end effector may be configured to handle specific objects, such as wafers, edge loops, ring assemblies, and / or sensor wafers 110. In some embodiments, the transfer chamber robot 112 may be a SCARA robot, but may have fewer links and / or fewer degrees of freedom compared to the factory interface robot 111.

[0040] The processing system may include one or more RF antennas 129 within the processing chamber 107. In various embodiments, the RF antennas 129 may be disposed on or within the walls of the processing chamber 107. In some embodiments, the RF antennas may be disposed within chamber components. For example, the RF antennas 129 may be disposed within a suction cup (e.g., an electrostatic suction cup) or within the nozzle of the processing chamber. One or more RF antennas 129 may additionally or alternatively be disposed within the transfer chamber 106, within loading locks (e.g., loading locks 104a, 104b), within FI 101, and / or within the cartridge 102.

[0041] RF antenna 129 is communicatively coupled to the SAW sensor assembly on sensor chip 110. For example, RF signals can be transmitted from RF antenna 129 to the SAW sensor assembly on sensor chip 110, and return signals can be generated by the SAW sensor assembly and received by the same RF antenna or another RF antenna 129. Return signals may include measurements of environmental conditions indicating the environment within the processing chamber, loading lock, transfer chamber, etc. (e.g., on the surface of the SAW sensor assembly). RF antennas may be connected to transceivers that generate and / or receive RF signals. In some embodiments, one or more RF antennas associated with the processing chamber are connected to an RF transmitter, and one or more RF antennas associated with the processing chamber are connected to an RF receiver. The sensor chip may not include any power components (e.g., any battery) and may instead be powered by the received RF signals generated by RF antenna 129. Therefore, the sensor chip can be a passive device.

[0042] Controller 109 controls various aspects of processing system 100 and is communicatively coupled to RF antenna 129. Controller 109 may be and / or include computing devices such as personal computers, server computers, programmable logic controllers (PLCs), microcontrollers, etc. Controller 109 may include one or more processing devices, such as microprocessors, central processing units, or the like. More specifically, the processing device may be a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, or a processor implementing other instruction sets or combinations thereof. The processing device may also be one or more special-purpose processing devices, such as application-specific integrated circuits (ASICs), field programmable gate arrays (FPGAs), digital signal processors (DSPs), network processors, or the like.

[0043] Although not shown, controller 109 may include data storage devices (e.g., one or more disk drives and / or solid-state drives), main memory, static memory, network interface, and / or other components. Controller 109 may execute instructions to perform any one or more of the methods and / or embodiments described herein. Instructions may be stored on a computer-readable storage medium, which may include main memory, static memory, secondary storage, and / or processing means (during instruction execution). For example, controller 109 may execute instructions to enable one or more RF antennas 129, factory interface 91, loading locks or stations 104a, 104b, transfer chamber 106, and / or any processing chamber 107 located in different storage locations. Controller 109 may subsequently receive and analyze returned RF signals generated by SAW sensor components on sensor chip 110. Each of the SAW sensor components may be configured to measure specific environmental properties, such as pressure, temperature, plasma power, etc., and output an RF signal indicating the measurement of the specific environmental property. Furthermore, multiple different SAW sensor components on the sensor chip can be configured to measure different environmental properties. The controller 109 can accept RF signals and determine measurement values ​​(e.g., amplitude, phase, frequency, and / or time delay) based on the environmental properties (or multiple environmental properties) measured based on the received RF signals.

[0044] In some embodiments, a single sensor chip 110 includes multiple SAW sensor components tuned to different frequencies and / or configured to perform different modulations of the signal (e.g., by performing phase shifts). Each SAW sensor may be associated with a specific modulation and / or frequency. The different frequencies and / or modulations of the various received RF signals can be used by the controller 109 to uniquely identify the specific SAW sensor that generates the corresponding RF signal. Thus, the sensor chip may include many different SAW sensors, and the controller 109 can uniquely determine which SAW sensor generates each received RF signal based on the unique fingerprint of this RF signal. This allows the controller 109 to determine the environmental distribution across the sensor chip 110 (e.g., local pressure and / or temperature across the sensor chip 110).

[0045] Figure 2This is a top perspective view of a sensor device 200 (e.g., a sensor wafer) including an integrated SAW sensor assembly 210, according to aspects of this disclosure. The sensor device 200 includes a substrate 202 and one or more SAW sensor assemblies 210A-D integrated into the surface of the substrate 202. Each SAW sensor assembly 210A-D may include an RF antenna 208A-D, a matching circuit 206A-D, and / or a SAW sensor 204A-D that is part of the integrated device. Alternatively, one or more SAW sensor assemblies 210A-D may include an integrated component of the SAW sensor 204A-D connected to a discrete RF antenna and a separate discrete matching circuit, and may include an integrated SAW sensor 204A-D and a matching circuit 206A-D connected to a separate discrete antenna, and / or may include an integrated SAW sensor 204A-D and an antenna 208A-D connected to a separate discrete matching circuit. In some embodiments, the sensor chip has at least one layer of piezoelectric material and includes a plurality of integrated SAW sensors 204A-D formed on the piezoelectric material, and, where appropriate, one or more integrated antennas 208A-D and / or integrated matching circuitry 206A-D disposed on the piezoelectric material. These components are referenced below. Figures 3A to 3B More detailed description.

[0046] like Figure 2 As shown, the substrate 202 can be a disk-shaped structure (e.g., a wafer) containing a flat surface. In several other embodiments, the substrate 202 can be formed into other flat shapes, which can be used for transport, deposition, and via processing systems (e.g., Figure 1 The processing system 100) processes the substrate. The substrate 202 may be made of a conventional wafer substrate (such as silicon) and may include a piezoelectric material (such as LiNbO3, LiTaO3, or La3Ga5SiO3). 14 The substrate may be partially or completely covered by the piezoelectric material. In some embodiments, the substrate may be entirely made of the piezoelectric material without having a conventional wafer substrate (e.g., silicon). In some embodiments, the substrate may include a piezoelectric substrate, comprising or being made of a piezoelectric material.

[0047] like Figure 2As shown, sensor device 200 includes a plurality of SAW sensor assemblies 210A-D integrated into and / or deposited on the surface of substrate 202. Sensor device 200 may include one or more SAW sensor assemblies 210A-D. Although four sensor assemblies 210A-D are shown as an example, more or fewer sensor assemblies may be included in sensor device 200. SAW sensor assemblies 210 may be arranged in a sensor array, wherein each integrated SAW sensor assembly 210 measures environmental conditions at different locations on substrate 202. In some embodiments, each SAW sensor assembly is formed on a common piezoelectric substrate or other substrate on which a piezoelectric layer is formed (e.g., on the same wafer). Alternatively, one or more SAW sensor assemblies may have been formed on separate piezoelectric substrates or substrates with piezoelectric layers to form discrete sensor assemblies (e.g., may have been formed on separate piezoelectric substrates together with other SAW sensor assemblies and subsequently diced and packaged to form discrete SAW sensor assemblies). Discrete sensor assemblies may then be mounted onto substrate 202. In this embodiment, the substrate 202 may or may not be a piezoelectric material. Each SAW sensor assembly 210A-D may be attached to different locations on the substrate 202 or disposed at different locations.

[0048] like Figure 2As shown, each of the SAW sensor assemblies 210A-D includes an RF antenna 208A-D, a matching circuit 206A-D, and a SAW sensor 204A-D. The RF antenna 208A-D, matching circuit 206A-D, and SAW sensor 204A-D may each include a planar conductor. For example, the RF antenna 208A-D, matching circuit 206A-D, and SAW sensor 204A-D may each be formed by depositing a single conductive layer for each conductive element (e.g., one layer for the IDT and / or reflector, one layer for the antenna, and one layer for the matching network). In some embodiments, the RF antenna 208A-D, matching circuit 206A-D, and SAW sensor 204A-D (e.g., including one or more IDTs and / or one or more reflectors) may form a single conductive layer, wherein the deposition of each element may be performed together in a single lithography step. The RF antennas 208A-D, matching circuits 206A-D, and / or SAW sensors 204A-D of a single SAW sensor assembly 120A-D may be integrated with each other on the substrate 202 (or on separate piezoelectric substrates or materials). Furthermore, in some embodiments, some or all of the SAW sensor assemblies 120A-D (including the SAW sensor, matching network, and antenna of the SAW sensor assembly) are integrated together on the substrate 202. The RF antennas 208A-D, matching circuits 206A-D, and SAW sensors 204A-D may include various materials and constructions as discussed herein in several other embodiments.

[0049] In some embodiments, sensor device 200 may include a protective coating or layer disposed over one or more SAW sensor assemblies 210. The protective coating may include a dielectric material having high temperature resistance (e.g., 300-1000 degrees Celsius). Examples of usable dielectric coatings include Al2O3, AlN, Y2O3, and Y3Al5O3. 12 Yttrium-based oxides, fluorides, and / or oxyfluorides, etc.

[0050] In some embodiments, the sensor device 200 includes a layer on the rear side of the substrate 202 opposite to the SAW sensor assembly 210. This layer on the rear side may include a metal layer. The metal layer may be used to minimize signals from other sources (e.g., signals from other chambers). Figure 1 The RF antenna 129) is protected from interference and additional support may be provided as needed for holding the sensor device 200 by means of a suction cup (e.g., an electrostatic suction cup).

[0051] In some embodiments, the sensor device 200 may include a shielding structure disposed over a region or portion of a region of a substrate above the SAW sensor 204. The shielding structure may include a recess above a region of the substrate 202 to allow SAW propagation across the surface of the substrate 202. The shielding structure may include a material having high-temperature resistance and / or high-pressure resistance. In some embodiments, the material is a metal, such as stainless steel, aluminum, or an aluminum alloy. In some embodiments, the material is a ceramic, which may be a dielectric material. In some embodiments, the shielding structure is disposed across a large portion of the substrate 202. For example, the shielding structure may include a cover that completely encloses the sensor device 200.

[0052] In some implementations, such as Figure 2 As shown, SAW sensor assemblies 210A-D can be disposed on the same side (e.g., the front side) of the substrate. However, in several other embodiments, SAW sensor assemblies 210A-D can be disposed on both the front and rear sides of the substrate. For example, a first set of SAW sensor assemblies (operating at a first resonant frequency) can be disposed on a first side of the substrate 202 and a second set of SAW sensors (operating at a second resonant frequency) can be disposed on a second side of the substrate 202.

[0053] In some embodiments, SAW sensor assemblies 210A-D may be positioned close to each other. In some embodiments, the SAW sensor assemblies may be co-located or share elements (e.g., the RF antenna 208A, matching circuit 206A, and / or the SAW sensor of the first SAW sensor assembly may be part of another SAW sensor assembly). In one embodiment, the first IDT may be adjacent to the second IDT. The first IDT may generate SAW that is reflected back to the second IDT by a reflector. In one embodiment, the SAW reflector of the SAW sensor (e.g., 204A) may be used to reflect SAW from the second SAW sensor assembly. In another example, the two SAW sensor assemblies may include SAW sensors that generate and propagate SAW across the same area of ​​the substrate 202. In another example, SAW sensor assemblies may be formed such that the IDTs of SAW sensor 204 are positioned close to each other and propagate SAW in two different directions.

[0054] Figures 3A to 3B Various embodiments of SAW sensor assemblies 300A-B according to aspects of this disclosure are described. The SAW sensor assembly 300 may include RF antennas 306A-B, matching circuits 304A-B, and SAW sensors 302A-B. For example, the SAW sensor assembly may... Figure 2 The sensor device 200 is used.

[0055] RF antenna 306A-B may include a planar conductor or multiple conductive layers coupled together to receive and / or transmit RF signals. As used herein, the coupled components may be directly coupled or indirectly coupled. For example, an IDT coupled to the antenna may be directly coupled to the antenna or indirectly coupled to the antenna via a matching network between the IDT and the antenna. RF antenna 306A-B may operate as a filter associated with a particular RF range. RF antenna 306A-B may include a resonator antenna (e.g., such as a dielectric resonator antenna), a fractal antenna, or some other type of antenna. RF antenna 306A-B may be a planar structure or formed to be generally flat or flush with the substrate surface (e.g., it may be a planar conductor). Matching circuitry 304A-B is coupled to RF antenna 306A-B and SAW sensor 302A-B. Matching circuitry 304A-B may include a combination of circuit components, such as resistors, capacitors, and / or inductors, to match the impedance and / or load of RF antenna 306A-B. In several embodiments, matching circuits 304A-B may be designed to minimize signal reflections between RF antennas 306A-B and SAW sensors 302A-B. Each SAW sensor 302A-B is coupled to its corresponding RF antenna 306A-B via a corresponding matching circuit 304A-B. Figures 3A to 3B As shown, the SAW sensor 302A-B may include an interdigital transducer (IDT) 310A-B. The IDT 310A-B includes two comb-shaped electrodes that interdigitate each other. The IDT 310A-B can be applied to piezoelectric materials (e.g., Figure 2 The IDT is disposed on a substrate 202. The IDT receives an incident signal (e.g., an alternating current (AC) signal) from a matching circuit 304 and generates an electric field in the gap between the conductive interdigitates of the electrodes based on the signal. This electric field generates a SAW on the surface of the piezoelectric material.

[0056] like Figure 3A As shown, the SAW sensor 302A may include SAW reflectors 312A-B. SAW generated by the IDT 310 propagates along the surface of a piezoelectric material to the SAW reflectors 312A-B. The SAW reflectors 312A-B may include strips of conductive material (e.g., a planar conductor) designed to reflect portions of the incident SAW generated by the IDT 310A. These reflective portions of the SAW can be reflected back to the IDT 310A. The IDT 310A can combine the reflected SAW, such as that reflected by multiple reflectors 312A-B, to generate an oscillating potential. This oscillating potential can be transmitted to an RF antenna 306. The RF antenna 306 outputs an emitted RF signal associated with the oscillating potential, which can be transmitted via an RF signal receiving device (e.g., Figure 1The RF antenna 129 receives the signal. The oscillating potential generated by the IDT 310A includes information indicating the environmental conditions of the environment positioned between the IDT 310 and the SAW reflector 312. The environmental conditions can be indicated by frequency changes in the RF signals sent to the SAW sensor assembly 300 and the returned received RF signals. The returned received signals may include information indicating the environmental conditions. For example, for a given temperature or pressure, the length of the piezoelectric material will be enhanced or suppressed, resulting in changes in the pitch, phase, and total delay of the signal, which can be calibrated to a specified temperature or pressure. In some embodiments, the reflector may be spatially arranged and calibrated such that frequency changes between RF signals are correlated with changes in environmental conditions (e.g., changes in temperature or pressure).

[0057] In some implementations, SAW reflectors 312A-B may be disposed on one or more sides of the IDT 310A, such as Figure 3A As shown. In some embodiments, the SAW reflectors may vary in distance and thickness from each other. Alternatively, the SAW reflectors may have a uniform thickness and / or spacing.

[0058] like Figure 3B As shown, the SAW sensor 302B includes a series of delay lines 314A-C. The SAW generated by the IDT 310 propagates along the surface of a piezoelectric material to the delay lines 314A-C. The delay lines 314A-C may include strips of conductive material (e.g., a planar conductor) designed to reflect and / or delay the SAW generated by the IDT 310. The delayed and reflected SAW returns to the IDT 310 and is combined. The relative delays of the reflected SAW constructively and destructively interfere with each other, resulting in an oscillating potential indicating the measured environmental conditions. This oscillating potential can be sent to the RF antenna 306 and to another device (e.g., Figure 1 (RF antenna 129). The oscillating potential includes information indicating the environmental conditions between IDT 310 and delay line 314. The environmental conditions can be indicated by changes in the frequency of the returned RF signal transmitted by RF antenna 306 or the relative delay of the reflected SAW. In some embodiments, reflectors 314A-C may be spatially arranged and calibrated such that the relative delay between the first set of delay lines (e.g., 314A) and the second set of delay lines (e.g., 314B) is correlated with measured environmental conditions (such as temperature or pressure).

[0059] In some embodiments, SAW sensors 302A-B include a second IDT (not depicted). First IDTs 310A-B can receive an incident electrical signal and generate a SAW associated with the incident signal. The SAW can travel across a piezoelectric material and be received by the second IDT. In some embodiments, the SAW can be transmitted via conductive elements (e.g., delay line 314) on the surface of the piezoelectric material before reaching the second IDT. The second IDT can generate an oscillating potential associated with the received SAW. The oscillating potential can be transmitted via a matching circuit connected to the second IDT to an RF antenna attached to the matching circuit. The change between a first oscillating potential based on the received RF signal and a second oscillating potential generated by the IDT based on the received SAW can indicate the measured environmental conditions. In some embodiments, multiple IDTs can share a common RF antenna and / or matching network.

[0060] In some embodiments, the RF antennas 306A-B, matching circuits 304A-B, and SAW sensors 302A-B including IDT 310A-B are all integrated together on a common piezoelectric material. As further discussed in several other embodiments, the SAW sensor assembly 300A-B can be fully integrated into the piezoelectric material, which allows the entire SAW sensor assembly 300A-B to be fabricated together on a substrate (e.g., a wafer) rather than a piece in multiple assembly steps and separate component manufacturing steps. Manufacturing a sensor device with all components in an integrated device enables the use of smaller sensor devices, which in turn reduces manufacturing costs, time, and the number of required manufacturing steps. Furthermore, manufacturing a single device enables the production of mutually compatible components. In addition, the inefficiencies of matching component specifications are eliminated.

[0061] Figure 4 This is a flowchart of a method 400 for manufacturing a SAW sensor assembly according to aspects of this disclosure. In various embodiments, method 400 can be implemented to manufacture a sensor device (e.g., Figure 1 (Sensor assembly 110).

[0062] refer to Figure 4In block 410, a conductive structure is formed on a substrate on which at least one layer of piezoelectric material is disposed, thereby forming an RF antenna on the piezoelectric material. The RF antenna may correspond to any of the previously mentioned RF antennas. The piezoelectric material may be any of the previously mentioned piezoelectric materials. Forming the first conductive structure may include performing a photoresist deposition operation to deposit photoresist on the piezoelectric material, performing a patterning operation (e.g., using a lithography apparatus) to cure selected portions of the photoresist, and performing an etching operation (e.g., in an etching chamber) to etch away the cured and uncured portions of the photoresist. A deposition process (e.g., atomic layer deposition, physical vapor deposition, chemical vapor deposition, etc.) may subsequently be performed (e.g., in a deposition chamber) to deposit a conductive layer (e.g., a metal layer) on the piezoelectric material and the photoresist formed on the piezoelectric material. A selective etching process may subsequently be performed (e.g., in an etching chamber) to remove the photoresist and the conductive material formed on the photoresist, thereby leaving the first conductive structure.

[0063] In block 420, a second conductive structure is formed on the piezoelectric structure to form a matching circuit that can have an electrical connection to the first conductive structure, which constitutes an RF antenna (e.g., the first conductive structure can be coupled to an RF antenna). The matching circuit may correspond to the previously mentioned matching circuit. Forming the second conductive structure may include performing a photoresist deposition operation to deposit photoresist on the piezoelectric material, performing a patterning operation (e.g., using a lithography apparatus) to cure selected portions of the photoresist, and performing an etching operation (e.g., in an etching chamber) to etch away the cured and uncured portions of the photoresist. A deposition process (e.g., atomic layer deposition, physical vapor deposition, chemical vapor deposition, etc.) may subsequently be performed (e.g., in a deposition chamber) to deposit a conductive layer (e.g., a metal layer) on the piezoelectric material and the photoresist formed on the piezoelectric material. A selective etching process may subsequently be performed (e.g., in an etching chamber) to remove the photoresist and the conductive material formed on the photoresist, thereby leaving the second conductive structure. The second conductive structure may be formed simultaneously with the first conductive structure. Therefore, a series of operations (e.g., photoresist deposition, lithography, etching, metal deposition, etching, etc.) can be performed to form both the first conductive structure and the second conductive structure simultaneously or in parallel.

[0064] In block 430, a third conductive structure is formed on the piezoelectric structure, thereby forming an interdigital transducer (IDT) on the piezoelectric material. The IDT may be coupled to an RF antenna and a matching circuit. The IDT may include the characteristic structure and configuration of an IDT (e.g., IDT 310 of FIG. 3) disclosed in other embodiments of this disclosure. Forming the third conductive structure may include performing a photoresist deposition operation to deposit photoresist on the piezoelectric material, performing a patterning operation (e.g., using a lithography apparatus) to cure selected portions of the photoresist, and performing an etching operation (e.g., in an etching chamber) to etch away the cured and uncured portions of the photoresist. A deposition process (e.g., atomic layer deposition, physical vapor deposition, chemical vapor deposition, etc.) may subsequently be performed (e.g., in a deposition chamber) to deposit a conductive layer (e.g., a metal layer) on the piezoelectric material and the photoresist formed on the piezoelectric material. A selective etching process may subsequently be performed (e.g., in an etching chamber) to remove the photoresist and the conductive material formed on the photoresist, thereby leaving the third conductive structure. The third conductive structure can be formed simultaneously with the first and / or second conductive structures. Therefore, a series of operations (e.g., photoresist deposition, lithography, etching, metal deposition, etching, etc.) can be performed to form the first, second, and third conductive structures simultaneously or in parallel.

[0065] In frame 440, a fourth conductive structure is formed on a piezoelectric material to form at least one of: a) one or more SAW reflectors or b) a second IDT electrode. The SAW reflectors and the second IDT may be separated from the IDT by a span of piezoelectric material across which the SAW can propagate. This can result in the second IDT and / or reflector being communicatively coupled to the first IDT via the SAW. The SAW reflectors may include SAW reflectors disclosed elsewhere in this disclosure (e.g., Figure 3A and Figure 3B The characteristic structure and construction of the SAW reflector 312. The second IDT may include IDTs disclosed elsewhere in this disclosure (e.g., Figure 3A and Figure 3BThe fourth conductive structure (IDT 310) features a specific structure and configuration. Forming the fourth conductive structure may include performing a photoresist deposition operation to deposit photoresist on a piezoelectric material, performing a patterning operation (e.g., using a lithography apparatus) to cure selected portions of the photoresist, and performing an etching operation (e.g., in an etching chamber) to etch away the cured and uncured portions of the photoresist. A deposition process (e.g., atomic layer deposition, physical vapor deposition, chemical vapor deposition, etc.) may subsequently be performed (e.g., in a deposition chamber) to deposit a conductive layer (e.g., a metal layer) on the piezoelectric material and the photoresist formed on the piezoelectric material. A selective etching process may subsequently be performed (e.g., in an etching chamber) to remove the photoresist and the conductive material formed on the photoresist, thereby leaving the fourth conductive structure. The fourth conductive structure may be formed simultaneously with the first, second, and / or third conductive structures. Therefore, a series of operations (e.g., photoresist deposition, lithography, etching, metal deposition, etching, etc.) can be performed to simultaneously or in parallel form a first conductive structure, a second conductive structure, a third conductive structure, and a fourth conductive structure.

[0066] At frame 450, a fifth conductive structure is formed, as appropriate, on a piezoelectric material to form one or more waveguides between IDTs. Forming the fifth conductive structure may include performing a photoresist deposition operation to deposit photoresist on the piezoelectric material, performing a patterning operation (e.g., using a lithography apparatus) to cure selected portions of the photoresist, and performing an etching operation (e.g., in an etching chamber) to etch away the cured and uncured portions of the photoresist. A deposition process (e.g., atomic layer deposition, physical vapor deposition, chemical vapor deposition, etc.) may subsequently be performed (e.g., in a deposition chamber) to deposit a conductive layer (e.g., a metal layer) on the piezoelectric material and the photoresist formed on the piezoelectric material. A selective etching process may subsequently be performed (e.g., in an etching chamber) to remove the photoresist and the conductive material formed on the photoresist, thereby leaving the fifth conductive structure. The fifth conductive structure may be formed simultaneously with the first, second, third, and / or fourth conductive structures. Therefore, a series of operations (e.g., photoresist deposition, lithography, etching, metal deposition, etching, etc.) can be performed to simultaneously or in parallel form a first conductive structure, a second conductive structure, a third conductive structure, a fourth conductive structure, and a fifth conductive structure.

[0067] In some implementations, the conductive structures forming the RF antenna, matching circuit, IDT, SAW reflector, and / or waveguide are formed as a single conductive layer. Operations in blocks 410, 420, 430, 440, and / or 450 may be performed together, such that each conductive structure is deposited together. Alternatively, one or more layers may be formed separately.

[0068] In some embodiments, method 400 may further include depositing a protective coating on the RF antenna and / or matching circuitry. The protective coating may include a dielectric material that is plasma-resistant, has high-temperature resistance, and / or high-voltage resistance. Examples of usable dielectric coatings include Al2O3, AlN, Y2O3, and Y3Al5O3. 12 Yttrium-based oxides, fluorides, and / or fluorine oxides, etc.

[0069] In some implementations, the deposition of protective layers and protective coatings may be performed using atomic layer deposition, chemical vapor deposition, physical vapor deposition, or plasma-enhanced versions thereof.

[0070] Figures 5A to 5B This is a top perspective view of various embodiments of a SAW sensor 500 with dielectric coatings 530, 540 disposed on top, according to aspects of this disclosure. SAW sensors 500A-B include an IDT 520 having two comb-shaped interdigital electrodes disposed on a substrate 510 having at least one layer of piezoelectric material. The SAW sensor further includes a dielectric coating 530 disposed on top of the IDT 520 and the substrate 510. SAW sensors 500A-B may additionally include one or more additional IDTs and / or reflectors spaced apart from the IDT 520 on the substrate 510. The dielectric coating 530 may additionally coat the additional IDTs and / or reflectors and / or regions of the substrate 510 between the IDTs and the additional IDTs and / or reflectors. In several embodiments integrating the SAW sensor assembly, which also includes an RF antenna and a matching network, the RF antenna and matching network may also be coated by the dielectric coating 530.

[0071] In some embodiments, the IDT 520 receives an electrical signal (e.g., an AC signal) and generates a SAW across the surface of a piezoelectric material. The generated SAW includes a propagation velocity and a resonant frequency. The resonant frequency of the SAW sensor can be adjusted by applying a dielectric coating 530. The dielectric coating 530 can adjust the propagation velocity of the SAW, thereby resulting in a reduced resonant frequency. The dielectric coating 530 may comprise a thin, uniform dielectric layer. Examples of dielectric coatings that can be used include Al2O3, AlN, Y2O3, and Y3Al5O3. 12 Yttrium-based oxides, fluorides, and / or fluorine oxides, etc.

[0072] In some embodiments, the target resonant frequency can be achieved by determining the fundamental resonant frequency of the SAW sensor and determining the thickness and / or material to coat the surface of the SAW sensor associated with a first frequency shift, such that the fundamental frequency with the applied frequency shift results in the target resonant frequency. In some embodiments, for example, as... Figure 5AAs shown, a single dielectric layer (or a dielectric layer of a first material and / or thickness) can be applied to the SAW sensor. However, in many other embodiments, such as... Figure 5B As shown, multiple dielectric layers of the same or different materials and / or thicknesses can be applied to tune the resonant frequency of the IDT 520. For example, as shown, dielectric coating 530 is the first layer and dielectric coating 540 is the second layer. Alternatively, a single dielectric coating (having one layer) can be used, which may have the same... Figure 5A The dielectric coating used has 530 different thicknesses and / or materials.

[0073] In some implementations, it can be based on Figure 4 Method 400 and / or Figure 8 Method 800 is used to manufacture SAW sensors 500A-B.

[0074] In some implementations, sensor data processing and analysis, image processing algorithms, machine learning (ML) algorithms that generate one or more trained machine learning models, deep ML algorithms, and / or other signal processing algorithms for analyzing SAW sensor data can be used to determine the resonant frequency shift of an SAW sensor due to the application of any number of dielectric coatings of various materials and thicknesses on top of the SAW sensor's IDT. These models, analyses, and / or algorithms can be used to calculate, predict, and estimate the combination of dielectric material and thickness with the resulting resonant frequency shift of a given SAW sensor. Additionally or alternatively, this technique can be used with SAW sensor data to design multiple SAW sensors that can operate close together without obfuscating the signals of such SAW sensors. In some implementations, training data for training ML models can be obtained by imaging SAW sensors previously coated with dielectric materials of specified materials and thicknesses using a scanning device or other type of sensor or camera to measure the resonant frequency shift.

[0075] One type of machine learning model that can be used is an artificial neural network, such as a deep neural network. Artificial neural networks typically include feature structure representation components with classifier or regression layers that map the feature structure to the desired output space. For example, a convolutional neural network (CNN) manages multiple layers of convolutional filters. Merging is performed at lower layers, which are typically topped with multiple layers of classifiers, and nonlinearity is resolved, thus mapping the features extracted from the top layers by the convolutional layers to a decision (e.g., a classification output). Deep learning is a class of machine learning algorithms that uses a cascade of multiple layers of nonlinear processing units for feature structure extraction and transformation. Each successive layer uses the output from the previous layer as input. Deep neural networks can learn in a supervised (e.g., classification) and / or unsupervised (e.g., pattern analysis) manner. Deep neural networks consist of a hierarchy of layers, where different layers learn different levels of representation corresponding to different levels of abstraction. In deep learning, each level learns to transform the input data of that level into a slightly more abstract and complex representation. In image recognition applications, for example, the original input might be a pixel matrix; a first representation layer extracts pixels and encodes edges; a second layer constructs and encodes the arrangement of edges; a third layer encodes high-level shapes (e.g., teeth, lips, gums, etc.); and a fourth layer identifies images containing faces or defines bounding boxes around teeth in an image. It's worth noting that deep learning processes can learn on their own which feature structures are best placed at which level within the deep learning process itself. The "depth" in "deep learning" refers to the number of layers through which data passes through the layer transformation. More precisely, deep learning systems have a substantial credit assignment path (CAP) depth. CAP is the chain of transformations from input to output. CAP describes the underlying causal relationship between the input and output. For feedforward neural networks, the CAP depth might be the network depth and could be the number of hidden layers plus one. For recurrent neural networks where the signal can propagate through more than one layer, the CAP depth is potentially unlimited.

[0076] In one implementation, the neural network is trained using a training dataset comprising multiple data points, each of which includes a SAW sensor fabrication (e.g., an IDT including a specific finger arrangement and / or a specific reflector arrangement) and may include a specific piezoelectric material and / or dielectric coating having a known material and / or thickness. Each training data point may additionally include or be associated with SAW properties such as SAW frequency, phase, time delay, etc. The neural network can be trained using the training dataset to receive inputs of the SAW sensor fabrication and target SAW properties and output a suggestion of a dielectric coating with a specific material and / or thickness that, when deposited on the SAW sensor, will cause the SAW sensor to produce a SAW with the target SAW properties.

[0077] Figure 6 This is a graph 600 depicting a frequency shift 610 in the fundamental resonant frequency of a SAW sensor according to aspects of this disclosure. A first peak 606 illustrates an IDT without a dielectric coating, which has a first resonant frequency. A second peak 608 illustrates an IDT with a dielectric coating, which has a second resonant frequency. The distance between the peaks represents the frequency shift 610 due to the application of the dielectric coating. The dielectric coating can be used to tune the resonant frequency. The frequency shift 610 increases with increasing dielectric coating thickness. In some embodiments, the dielectric coating may also protect the SAW sensor from extreme environmental conditions (e.g., from plasma environments, from corrosive chemical environments, etc.). Figure 6 As shown, there is a signal strength reduction 612 due to the dielectric coating. In several embodiments, the dielectric coating also prevents the SAW sensor from being overexposed and from signal saturation from the environment.

[0078] Figure 7 This is a top perspective view of a sensor device 700 according to aspects of this disclosure. The sensor device 700 has a substrate 702 and includes SAW sensor assemblies 704A-B disposed on the substrate 702. The SAW sensor assemblies 704A-B include an RF antenna 710, a matching circuit 708, and SAW sensors 706A-B. The SAW sensor assemblies 704A-B, including the RF antenna 710, the matching circuit 708, and the SAW sensors 706A-B, may include the characteristic structures and configurations of SAW sensors disclosed elsewhere herein (e.g., Figure 2 The substrate 202 and the SAW sensor assembly 210 and the method 300 of FIG3).

[0079] like Figure 7As shown, SAW sensors 706A-706B can be disposed on a piezoelectric material of a substrate 702, which can be attached to or deposited on the substrate 702. For example, the piezoelectric substrate of SAW sensors 706A-B can be attached to a silicon wafer. In several other embodiments, the SAW sensor assembly can be fully integrated into the substrate 702. For example, the substrate 702 can include a common piezoelectric material and the RF antenna 710, matching circuit 708, and SAW sensors 706A-B of one or more SAW sensor assemblies 704A-B can be integrated with each other on the common piezoelectric material. Alternatively, one or more of the RF antenna 710 or matching circuit 708 can be discrete devices not integrated into the substrate 702.

[0080] like Figure 7 As shown, SAW sensors 706A-B may each include an IDT disposed on a piezoelectric material and a dielectric coating covering the IDT. In some embodiments, the dielectric coating of each SAW sensor 706A-B assembly may include the same thickness and material. In several other embodiments, the thickness and / or material of the dielectric coating may be unique for each SAW sensor assembly 704. The unique resonant frequency of each SAW sensor assembly can be used to measure environmental conditions and map the measurement to a specific SAW sensor and therefore its location on the substrate 702.

[0081] In some embodiments, the dielectric coating may cover a portion of the SAW sensor assembly 704 having SAW sensors 706A-B. However, in many other embodiments, the dielectric coating may cover the entirety of each SAW sensor assembly 704, including the RF antenna 710 and the matching circuit 708.

[0082] In some embodiments, each sensor assembly may include a SAW sensor assembly 704, wherein SAW sensors 706A-B have the same fundamental resonant frequency. SAW sensors 706A-B may be tuned to produce SAWs with different acoustic frequencies by applying dielectric coatings of different thicknesses and / or materials to each SAW sensor 706A-B, thereby generating different resonant frequency shifts. For example, a first SAW sensor 706A may have a first dielectric coating (with a first thickness), and a second SAW sensor 706B may have a second dielectric coating (with a second thickness).

[0083] In some embodiments, a combination of SAW sensor assemblies with and / or without a dielectric coating (not depicted) can be assembled on the same substrate 702 as a SAW sensor assembly 704 with a dielectric coating.

[0084] Figure 8This is a flowchart of a method 800 for manufacturing a SAW sensor assembly according to aspects of this disclosure.

[0085] refer to Figure 8 In block 810, the processing system can determine the current RF resonant frequency range of the SAW sensor. The SAW sensor may include the characteristic structure and configuration of SAW sensors disclosed elsewhere herein (e.g., SAW sensor 500 of Figure 5).

[0086] In box 820, the processing system can determine the target RF resonant frequency range for the SAW sensor.

[0087] At block 830, the processing system may determine at least one of a dielectric coating material or a dielectric coating thickness, which will tune the signal propagation speed and adjust the current RF resonant frequency range to a target RF resonant frequency range. In one embodiment, the SAW sensor design (and, where appropriate, target SAW properties) is input into a trained machine learning model that outputs recommendations for the dielectric coating material and / or dielectric coating thickness. In some embodiments, the processing system determines the combination of dielectric materials and layers to be deposited on the SAW sensor. In some embodiments, the determined materials and thicknesses are dependent on SAW sensor specifications (e.g., surface area, maximum thickness, etc.).

[0088] In box 840, the processing system may deposit a dielectric coating on the SAW sensor. The dielectric coating may have at least one of a dielectric coating material or a dielectric coating thickness determined in box 830.

[0089] In block 850, the processing system determines whether the resonant frequency is within a threshold difference of the target RF resonant frequency. The processing system measures the current resonant frequency and compares the result with the target resonant frequency determined in block 820. If the resonant frequency is within the threshold difference, method 800 is completed. However, if the resonant frequency is not within the threshold difference of the target frequency, the method returns to block 810 and repeats the steps of the method to determine and deposit another dielectric coating.

[0090] Figures 9A to 9C Various embodiments of the electrode arrangement of the SAW sensor IDT 900A-B according to aspects of this disclosure are described. Each of the IDT 900A-C includes two comb-shaped electrodes having interlocking interdigitated fingers 910A-C arranged in one arrangement on a substrate having at least one layer of piezoelectric material.

[0091] In some embodiments, the IDT 900A-C receives an electrical signal (e.g., an RF signal) and generates a SAW associated with the received electrical signal. In another embodiment, the IDT 900A-C receives a SAW and generates an electrical signal (e.g., an RF signal) associated with the received SAW. In either case, the arrangement of the interlocking interdigitates 910A-C of the electrodes can produce signal modulation within any signal transmitted through the IDT 900A-C.

[0092] Multiple embodiments of this disclosure include various arrangements of the interlocking interdigitated fingers 910A-C. For example... Figure 9A As shown, for example, the IDT 900A may include a first arrangement of alternating interlocked interdigitated fingers 910A. This first arrangement may result in an unmodulated signal 920A having a specific resonant frequency and / or phase. Figure 9B As shown, for example, the IDT 900B may include a second arrangement of interlocked interdigitated fingers 910B, which include at least two interdigitated fingers from the same electrodes arranged adjacent to each other. This arrangement may result in a modulated signal 920B. In some embodiments, the modulated signal 920B may include a signal with the same resonant frequency as the unmodulated signal 920A, but with a phase shift or otherwise modified. Figure 9C The text explains that the pitch or interval between interlocking fingers can also be adjusted to generate a modulated signal with an adjusted or modulated frequency.

[0093] In some implementations, the arrangement of interlocking interdigitates (e.g., 910B) can result in signal modulation that identifies the IDT (e.g., 910B). For example, the modulated signal (e.g., 920B) includes unique signal modulation (e.g., phase shift 930), which is used to modulate other signal processing devices (e.g., Figure 1 The identifier of the RF antenna 129). In another example, the signal generated by the SAW sensor may include information identifying measurable environmental conditions and identifying the signal modulation of the SAW sensor that transmits signals containing information.

[0094] In some implementations, signal modulation generated by the arrangement of interlocking interdigitates can result in the signal modulation incorporating a phase shift of the original signal. For example, as... Figure 9B As shown, the arrangement of the interlocking interdigitates 910B results in a signal with the same frequency as the unmodulated signal, wherein there is a phase shift 930 at various locations across the signal. In some embodiments, the modulated signal includes the same frequency as the unmodulated signal.

[0095] Figures 9A to 9CThe IDT 900A-C depicted may be a subset or sub-part of the IDT used in various embodiments of this disclosure. For example, the arrangement depicted by IDT 900A may be repeated for a longer IDT. In another instance, Figure 9B The IDT 900B depicted may include more interlocking interdigitates than the depicted component, and these interdigitates may include various arrangements that result in modulation of the respective phases and / or frequencies. For example, the IDT 900B may be associated with a phase-shifted signal pulse, but when combined with other sub-sections (not depicted), it produces signal modulation of a signal consisting of multiple modulated pulses, resulting in a modulated signal. In some embodiments, combinations of arrangements depicted by IDT 900A and IDT 900B may be combined to have both a phase-shifted region and a region without modulation. For example, the IDT may include alternating sub-sections that include IDT 900A and IDT 900B that result in signal modulation. Furthermore, the IDT may include alternating sub-sections that include IDT 900A, IDT 900B, and / or IDT 900C that result in signal modulation.

[0096] In some implementations, the IDT 900A-C can be a sensor device (e.g., Figure 2 The sensor assembly of the sensor device 200 (e.g., Figure 2 SAW sensor assembly 210) of SAW sensor (e.g., Figure 2 The SAW sensor (204) is a portion thereof. Individual SAW sensor assemblies may be positioned across a substrate (e.g., a wafer). Each SAW sensor assembly may include a SAW sensor with an IDT having a unique arrangement of digitally interlocked interdigitated fingers. Each SAW sensor can measure environmental conditions and return information in a signal with signal modulation that identifies the SAW sensor assembly transmitting the information. It is understood that by having a unique signal modulation, each sensor can operate within overlapping or even equal resonant frequency ranges and still be distinct from other sensors. For example, because the signal transmitting information associated with environmental conditions also includes signal modulation that identifies the sensor located in a first region of the substrate, the measured environmental conditions can be mapped to the first region of the substrate.

[0097] In some embodiments, the arrangement of the interlocking forks can be combined with other embodiments of this disclosure to identify sensors. For example, the arrangement of the interlocking forks 910 can be associated with... Figure 10A and Figure 10BThe spatial arrangement of the SAW reflector 1004 is discussed. This can result in an additional modulated signal that uniquely identifies the SAW sensor. In another example, the arrangement of the interlocking interdigitates 910 can be combined with the application of the dielectric coating 530 as discussed in associated Figure 5. This can result in a combination of signal modulation and a tuned frequency that uniquely identifies the SAW sensor. The combination of these techniques can increase the density of SAW sensors that can be placed together on a sensor wafer and still be uniquely identified.

[0098] Figures 10A to 10B Various spatial arrangements of SAW reflectors for SAW sensors 1000A-B according to aspects of this disclosure are depicted. The SAW sensor 1000A-B includes an IDT 1002A-B and one or more sets of SAW reflectors 1004A-D spatially arranged on a piezoelectric substrate or a substrate (e.g., a semiconductor substrate) having a piezoelectric layer disposed thereon. The IDT 1002A-B is designed to receive electrical signals and generate SAW that propagates across the surface of the piezoelectric material of the piezoelectric substrate or piezoelectric layer. The generated SAW is reflected by the SAW reflectors 1004A-D and returns to the IDT 1002A-B. The IDT 1002A-B generates a new potential associated with the reflected SAW. The SAW reflectors can be spatially arranged to modulate signals applied to the reflected SAW waves, which return to the IDT 1002A-B.

[0099] As shown in the figure, each of the individual IDTs 1002A-B generates a SAW based on the received RF signal, and receives the reflection of the SAW and generates a new RF signal from the reflection of the received SAW. In this embodiment, the generation of the SAW and the reception of the reflected SAW are time-shifted, such that an RF signal is received at time 1 and a new RF signal is generated at time 2. In some embodiments (not shown), two IDTs are arranged side-by-side or adjacent to each other. The first IDT can receive the RF signal and generate a SAW, and the second IDT can receive the reflected SAW and generate a new RF signal. In this configuration, the first IDT and the second IDT can operate in parallel. Therefore, the second IDT can output a new RF signal while the first IDT receives the incident RF signal.

[0100] Multiple embodiments of this disclosure include various spatial arrangements of SAW reflectors 1004A-D. For example, as shown in SAW reflectors 1004A-B, the SAW sensor may include a collection of uniformly distributed SAW reflectors. In another instance, the SAW sensor may include a collection of non-uniformly distributed and uniquely spaced SAW reflectors. In another instance, as shown in SAW reflectors 1004C-D, the SAW sensor may include one or more collections of SAW reflectors grouped together. In yet another instance, as shown in SAW reflector 1004D, the SAW sensor may include one or more collections of SAW reflectors grouped at disparate intervals.

[0101] In some implementations, the spatial arrangement of the SAW reflectors 1004A-D results in signal modulation for identifying the SAW sensor. For example, in Figures 10A to 10B Each of the previously described examples can result in a signal modulation unique to each SAW sensor. For example, the signal modulation can result in phase changes, frequency changes, and / or signal delays due to constructive and destructive interference from the SAW reflected back to IDT 1002A-B.

[0102] For example, the spacing of 1010A-D between groups of SAW reflectors can result in a unique signal modulation. For example, in Figure 10BIn this design, SAW reflector 1004C is divided into a first group of reflectors 1009A and a second group of reflectors 1009B, and SAW reflector 1004D is divided into a first group of reflectors 1009C and a second group of reflectors 1009D. All reflectors in the first groups 1009A and 1009C have a first pitch or spacing, and all reflectors in the second groups 1009B and 1009D also have a first pitch or spacing. The first pitch or spacing can be, for example, an spacing approximating one wavelength of the SAW. The first group 1009A can be separated from the second group 1009B by a gap or space 1010D, which may not be the entire wavelength of the SAW. Similarly, the first group 1009C can be separated from the second group 1009D by a gap or space 1010D. In some embodiments, the gap or space 1010D may have a length that is a quarter wavelength, half a wavelength, three-quarter wavelength, and one and a half wavelengths, one and a half wavelengths, one and a three-quarter wavelengths, two and a half wavelengths, two and a half wavelengths, two and a half wavelengths, two and a three-quarter wavelengths, etc. In another example, the spatial distribution of the SAW reflectors 1004A-D may include half-wavelength and / or quarter-wavelength intervals between the SAW reflectors. In some embodiments, the SAW reflectors are arranged in groups, wherein a first group of SAW reflectors may be offset from a second group of SAW reflectors, for example, by half a wavelength or a quarter wavelength. In one embodiment, each SAW reflector in the first group of SAW reflectors is spaced apart from one or more nearest SAW reflectors in that group by a gap that may correspond to the wavelength of the SAW. Furthermore, each SAW reflector in the second group of SAW reflectors may be spaced apart from one or more nearest SAW reflectors from that group by a gap that may correspond to the wavelength of the SAW. In some embodiments, combinations of half-wavelength, quarter-wavelength, and / or full-wavelength intervals can be used to generate a unique signal modulation that identifies the SAW sensor 1000A-B. In some embodiments, the SAW sensor 1000A-B can be a sensor device (e.g., Figure 2 The sensor assembly of the sensor device 200 (e.g., Figure 2This refers to a portion of a SAW sensor assembly 210. Each SAW sensor assembly may be positioned across its respective substrate (e.g., a wafer) including an IDT (Integrated Device Transformer) and a set of SAW reflectors arranged in a unique spatial configuration. Each SAW sensor measures environmental conditions and returns information in a signal with signal modulation that identifies the SAW sensor assembly transmitting the information. It is understood that by having a unique signal modulation, each sensor can operate within overlapping or even equal resonant frequency ranges and still be distinguishable from other sensors. For example, because the signal transmitting information associated with environmental conditions also includes signal modulation that identifies the sensor located in a first region of the substrate, the measured environmental conditions can be mapped to the first region of the substrate.

[0103] In some embodiments, the spatial arrangement of the SAW reflectors can be combined with other embodiments of this disclosure to identify SAW sensors. For example, as associated Figures 9A-9C The unique spatial arrangement of the SAW reflectors 1004A-D of the SAW sensor can be combined with the unique arrangement of the interlocking interdigitators 910 of the IDT. This can result in the unique identification of another modulated signal from the SAW sensor. In another example, the unique spatial arrangement of the SAW reflectors 1004 can be combined with, as associated with... Figure 5A and Figure 5B The applied dielectric coating 530 is described. This results in signal modulation and a unique combination of tuned frequencies that identify the SAW sensor.

[0104] Figures 11 to 14 This is a top perspective view of various embodiments of sensor devices 1100-1400 according to aspects of this disclosure. The sensor devices include substrates 1102-1402 (e.g., a piezoelectric substrate or a semiconductor substrate with a piezoelectric layer disposed thereon) having at least one layer of piezoelectric material and SAW sensor assemblies 1104-1404 and 1108-1208, which are designed to receive and / or transmit RF signals associated with environmental conditions measured using SAW 1106-1406. The sensor assemblies may include RF antennas, matching circuitry, and SAW sensors with an IDT. The sensor assemblies may include the characteristic structures and configurations of SAW sensor assemblies (e.g., sensor device 200) disclosed elsewhere herein. The following exemplary embodiments disclose various configurations for transmitting SAW between multiple sensor assemblies to measure environmental conditions in regions on the surface of piezoelectric material between the multiple sensor assemblies.

[0105] In some implementations, for example, such as Figure 11As shown, the sensor device 1100 may include a first SAW sensor assembly 1104A, which is designed to receive an incident RF signal and generate a SAW 1106A propagating across the surface of a substrate 1102, which may be a piezoelectric substrate or a substrate on which a piezoelectric layer is disposed. The SAW 1106A is received by a second SAW sensor assembly 1108A, which is designed to generate a potential associated with the received SAW 1106A and output an emitted RF signal associated with the potential. The emitted RF signal output includes information indicating environmental conditions between the first SAW sensor assembly 1104A and the second SAW sensor assembly 1108A. In some embodiments, a waveguide is disposed between the first SAW sensor assembly 1104A and the second SAW sensor assembly 1108A. The waveguide may maintain the SAW propagating between the first SAW sensor assembly 1104A and the second SAW sensor assembly 1108A. In some embodiments, the first SAW sensor assembly 1104A and the second SAW sensor assembly 1108A are part of a single integrated device. In some embodiments, the matching network and / or antenna of the SAW sensor assemblies 1104A, 1108A are not part of the integrated device, but are instead discrete components. In some embodiments, a waveguide disposed between the first SAW sensor assembly 1104A and the second SAW sensor assembly 1108A, together with the first and / or second SAW sensor assemblies 1104A, 1108A, is part of the integrated device. In other embodiments, the sensor device may include a first set of SAW sensor assemblies 1104, each of which generates SAW 1106 received by a second set of SAW sensor assemblies 1108. In several embodiments, each of the SAW sensor assemblies may be part of a single integrated device. In some embodiments, a waveguide is disposed between one or more corresponding pairs of first SAW sensor assemblies 1104A-D and second SAW sensor assemblies 1108A-D.

[0106] In some implementations, for example, such as Figure 12As shown, sensor device 1200 may include a set of SAW generating sensor components 1204, which are designed to receive incident RF signals and generate SAW 1206 propagating across the surface of substrate 1202, which may be a piezoelectric substrate or a substrate having a piezoelectric layer. Sensor device 1200 may also include a SAW receiving sensor component 1208, which is designed to receive the SAW 1206 generated by the set of SAW generating sensor components 1204. SAW receiving sensor component 1208 may be designed to generate an oscillating potential associated with each of the SAW 1206 generated by the SAW generating sensor components 1204. SAW receiving sensor component 1208 outputs an emitted RF signal based on each oscillating potential, wherein each RF signal includes information indicating environmental conditions of the environment between SAW receiving sensor component 1208 and the associated SAW generating sensor component (e.g., 1204A). In some embodiments, a first waveguide may be disposed between SAW generating sensor assembly 1208 and first sensor assembly 1204A, and a second waveguide may be disposed between SAW generating assembly 1208 and second SAW sensor assembly 1204B. In some embodiments, the first SAW sensor assembly 1204A, the second SAW sensor assembly 1204B, and the SAW receiving sensor assembly 1208 are part of a single integrated device. In some embodiments, the matching network and / or antenna of SAW sensor assemblies 1204A, 1204B, and 1208 are not part of the integrated device, but are instead discrete components. In some embodiments, the first waveguide disposed between the first SAW sensor assembly 1204A and the SAW receiving sensor assembly 1208, and the second waveguide disposed between the second SAW sensor assembly 1204B and the SAW receiving sensor assembly 1208, together with the first SAW sensor assembly 1204A, the second SAW sensor assembly 1204B, and / or the SAW receiving sensor assembly 1208, are part of an integrated device. In another embodiment, the sensor device 1200 may include multiple sets of SAW generating sensor assemblies (e.g., 1204) and multiple SAW receiving sensor assemblies (e.g., 1208) to receive SAW generated by each set of SAW generating sensor assemblies (e.g., 1206).

[0107] In some implementations, for example, such as Figure 13As shown, the sensor device 1300 may include two sensor components 1304A and 1304B, each disposed on a piezoelectric substrate 1302 (or a substrate on which a piezoelectric layer is disposed). Each sensor component 1304A and 1304B can receive an incident RF signal and generate a SAW 1306 associated with the received incident RF signal. The SAW 1306 generated by each signal is received by the other sensor component. For example, the SAW 1306 generated by the first sensor component 1304A is received by the second sensor component 1304B, and the SAW 1306 generated by the second sensor component 1304B is received by the first sensor component 1304A. Each sensor component 1304 can generate an oscillating potential associated with the corresponding SAW 1306 received by each sensor component 1304. Each sensor assembly 1304 can output an emitted RF signal according to each oscillating potential, wherein each emitted RF signal includes information indicating the environmental conditions of the environment set between the two sensor assemblies 1304A and 1304B. In another embodiment, the processing system (e.g., Figure 1 The processing system 100 can coordinate the transmission of incident RF signals, causing the sensor components to alternately play the roles of SAW generation and oscillating potential generation. In different embodiments, the processing system can coordinate the transmission of incident RF signals, causing each sensor component 1304 to generate SAW synchronously with other sensor components 1304. In another embodiment, the sensor device 1300 may include multiple pairs of sensors that operate according to the exemplary embodiments previously described in detail with respect to sensor components 1304A and 1304B.

[0108] In some embodiments, a waveguide is disposed between the first SAW sensor assembly 1304A and the second SAW sensor assembly 1304B. In some embodiments, the first SAW sensor assembly 1304A and the second SAW sensor assembly 1304B are part of a single integrated device. In some embodiments, the matching network and / or antenna of the SAW sensor assemblies 1304A-B are not part of the integrated device, but are instead discrete components. In some embodiments, the waveguide disposed between the first SAW sensor assembly 1304A and the second SAW sensor assembly 1304B, together with the first and / or second SAW sensor assemblies 1304A, 1304B, are part of the integrated device.

[0109] In some implementations, such as Figure 14As shown, sensor device 1400 may include a plurality of sensor components 1404 disposed on the surface of a substrate 1402 having at least one layer of piezoelectric material. Sensor device 1400 may include SAW sensor component 1404A, which is designed to receive an incident RF signal and generate SAW 1406 to be received by the plurality of SAW sensor components 1404B, 1404C, and 1404D. Sensor device 1400 may include SAW sensor component 1404B, which is designed to receive SAW 1406A from another SAW sensor component 1404A and generate an oscillating potential associated with the SAW and output an incident RF signal associated with the generated oscillating potential. SAW sensor component 1404B may also be designed to generate SAW 1408 in response to receiving an incident RF signal. The sensor device may further include a SAW sensor assembly 1404C, which is designed to receive SAWs 1408 and 1406B from a plurality of SAW sensor assemblies 1404A and 1404B. The SAW sensor assembly 1404C can generate an oscillating potential for each of the received SAWs and output an emitted RF signal associated with each of the generated oscillating potentials. The SAW sensor assembly 1404C may also be designed to generate a SAW 1410 in response to receiving an incident RF signal. The sensor device may further include a SAW sensor assembly 1404D, which is designed to receive SAWs 1410 and 1406C from a plurality of SAW sensor assemblies 1404C and 1404A. The SAW sensor assembly 1404D can generate a potential for each of the received SAWs and output an emitted RF signal associated with each of the generated oscillating potentials.

[0110] In some embodiments, one or more SAW sensor assemblies 1404A-D are part of the same integrated device. In some embodiments, a waveguide is disposed between one or more SAW sensor assemblies 1404A-D, such as between SAW sensor assembly 1404A and SAW sensor assembly 1404D and / or between SAW sensor assembly 1404A and SAW sensor assembly 1404C. In many embodiments, the waveguide may be part of an integrated device having one or more SAW sensor assemblies. For example, the waveguide may be a planar conductor formed on a piezoelectric material, on which the SAW sensor assemblies are formed.

[0111] In some implementations, using Figures 11 to 14The embodiments shown are combinations. For example, sensor assemblies 1104, 1108, 1204, 1208, 1304, and 1404 can be used on the surface of a piezoelectric substrate in any combination of each other to measure environmental conditions at different regions across the surface of the piezoelectric substrate in response to receiving incident RF signals.

[0112] The foregoing description sets forth several specific details, such as examples of specific systems, components, methods, etc., to provide a good understanding of several embodiments of this disclosure. However, it will be apparent to those skilled in the art that at least some embodiments of this disclosure can be practiced without these specific details. In other instances, well-known components or methods are not described in detail and are provided in a simple block diagram format to avoid unnecessarily obscuring this disclosure. Therefore, the specific details set forth are merely exemplary. Specific implementations may be modified from these exemplary details and still contemplated within the scope of this disclosure.

[0113] Throughout this specification, references to "one embodiment" or "an embodiment" mean that a particular feature, structure, or characteristic described in connection with an embodiment is included in at least one embodiment. Therefore, the phrase "in one embodiment" or "in an embodiment" appearing in various places throughout this specification does not necessarily refer to the same embodiment. Furthermore, the term "or" is intended to mean an inclusive "or" rather than an exclusionary "or." When the terms "about" or "approximately" are used herein, it is intended to mean that the provided nominal values ​​are accurate within ±10%.

[0114] Although the operations of the methods described herein are illustrated and described in a specific order, the order of operations for each method may be changed, such that some operations can be performed in reverse order, or that some operations can be performed at least partially concurrently with other operations. In another embodiment, instructions or sub-operations of different operations may be performed intermittently and / or alternately. In one embodiment, multiple metal-combined operations are performed as a single step.

[0115] It will be understood that the above description is intended to be illustrative rather than restrictive. Numerous other embodiments will become apparent to those skilled in the art upon reading and understanding the above description. Therefore, the scope of this disclosure should be determined by reference to the appended claims together with the full scope of their equivalents.

Claims

1. A sensor device, comprising: A first integrated sensor assembly, the first integrated sensor assembly comprising: A first surface acoustic wave (SAW) sensor, the first SAW sensor being disposed on a substrate comprising at least one layer of piezoelectric material, wherein the first SAW sensor is adapted to measure environmental conditions in response to receiving a first incident RF signal, the first SAW sensor comprising: A first interdigital transducer (IDT) is formed on a first region of the piezoelectric material, and the first IDT responds to receiving the first incident RF signal to generate a first SAW based on the environmental conditions. and A second IDT, formed on a second region of the piezoelectric material, wherein the second IDT receives the first SAW from the first IDT and generates a first oscillating potential associated with a first audio frequency of the received first SAW. A first RF antenna is formed on a third region of the piezoelectric material; and A second RF antenna, coupled to the second IDT, is formed on a fourth region of the piezoelectric material; The first SAW sensor, the first RF antenna, and the second RF antenna are integrated with each other on the piezoelectric material, and wherein: The second RF antenna receives the first incident RF signal; The second IDT further responds to receiving the first incident RF signal to generate a second SAW based on the environmental conditions; The first IDT further receives the second SAW from the second IDT; The first IDT further generates a second oscillating potential associated with the second audio frequency of the received second SAW; and The first RF antenna further outputs an emitted RF signal based on the second oscillating potential.

2. The sensor device of claim 1, wherein the first integrated sensor assembly further comprises a matching circuit coupled to the first RF antenna and the first IDT and formed on a fifth region of the piezoelectric material.

3. The sensor device of claim 2, wherein the first RF antenna, the matching circuit, the first IDT, and the second IDT each comprise one or more planar conductors disposed on the piezoelectric material.

4. The sensor device of claim 2, further comprising a protective coating or cover disposed on the first RF antenna and the matching circuit.

5. The sensor device of claim 1, further comprising: The second integrated sensor assembly includes: A second SAW sensor, disposed on the piezoelectric material, wherein the second SAW sensor is adapted to measure the environmental conditions of the environment in response to receiving a first incident RF signal or a second incident RF signal, the second SAW sensor comprising: The third IDT is formed on the fifth region of the piezoelectric material; and a) one or more additional SAW reflectors communicatively coupled to the third IDT and formed on the sixth region of the piezoelectric material or b) at least one of a fourth IDT formed on the seventh region of the piezoelectric material; and A third RF antenna, which is coupled to the third IDT and formed on an eighth region of the piezoelectric material; The second SAW sensor and the third RF antenna are integrated on the piezoelectric material, and the first SAW sensor is adapted to operate in a first frequency range, while the second SAW sensor is adapted to operate in a second frequency range different from the first frequency range.

6. The sensor device of claim 1, wherein the substrate comprises a piezoelectric substrate, and the piezoelectric substrate comprises the piezoelectric material.

7. The sensor device of claim 1, wherein the substrate comprises a substrate made of a first material and a piezoelectric layer on the substrate, wherein the piezoelectric layer comprises the piezoelectric material.

8. The sensor device of claim 1, wherein the environmental conditions are measured based on the change between the first oscillating potential and the second oscillating potential.

9. The sensor device as claimed in claim 1, wherein: The second RF antenna further receives the second incident RF signal; The second IDT further responds by receiving the second incident RF signal to generate a third SAW based on the environmental conditions; The first IDT further: Receive the third SAW from the second IDT; and Generate a third oscillating potential associated with the third audio frequency of the received third SAW; and The first RF antenna further outputs a second emitted RF signal based on the third oscillation potential.

10. The sensor device of claim 1, wherein the first integrated sensor assembly further comprises: A third IDT, wherein the third IDT is formed on a fifth region of the piezoelectric material, and wherein the third IDT: Receive the first SAW from the first IDT; and A third oscillating potential is generated in association with the first audio frequency of the received first SAW; and A third RF antenna is coupled to the third IDT, wherein the third RF antenna further outputs a second emitted RF signal according to the third oscillating potential.

11. The sensor device of claim 10, wherein: The second RF antenna further receives the first incident RF signal or the second incident RF signal; The second IDT further responds to receiving the first incident RF signal or the second incident RF signal to generate a third SAW based on the environmental conditions; The third IDT further states: Receive the third SAW from the second IDT; and A fourth oscillating potential is generated in association with the combination of the first audio frequency of the received first SAW and the second audio frequency of the received third SAW; and The third RF antenna further outputs a third emitted RF signal based on the fourth oscillation potential.

12. The sensor device of claim 1, wherein the first integrated sensor assembly further comprises: The third IDT formed on the fifth region of the piezoelectric material; and A third RF antenna coupled to the third IDT, wherein: The second RF antenna further receives the first incident RF signal or the second incident RF signal; The second IDT further responds to receiving the first incident RF signal or the second incident RF signal to generate a third SAW based on the environmental conditions; The third IDT further states: Receive the third SAW from the second IDT; and A third oscillating potential is generated in association with the audio frequency of the received third SAW; and The third RF antenna further outputs a second emitted RF signal based on the third oscillation potential.

13. The sensor device of claim 1, wherein the first integrated sensor assembly further comprises: A third IDT, the third IDT being formed on a fifth region of the piezoelectric material; and A third RF antenna, coupled to the third IDT, wherein: The third RF antenna further receives the first incident RF signal or the second incident RF signal; The third IDT further responds to receiving the first incident RF signal or the second incident RF signal to generate a third SAW based on the environmental conditions; Second IDT: Receive the third SAW from the third IDT; and A third oscillating potential is generated in association with the combination of the first audio frequency of the received first SAW and the third audio frequency of the received third SAW; and The second RF antenna further outputs a second emitted RF signal based on the third oscillation potential.

14. The sensor device of claim 1, wherein the first SAW sensor further comprises a waveguide formed on the piezoelectric material between the first IDT and the second IDT.

15. An integrated sensor device, comprising: A first surface acoustic wave (SAW) sensor, the first SAW sensor being disposed on a substrate comprising at least one layer of piezoelectric material, wherein the first SAW sensor is adapted to measure environmental conditions in response to receiving a first incident RF signal, the first SAW sensor comprising a first interdigital transducer (IDT) formed on a first region of the piezoelectric material, the first IDT generating a first SAW based on the environmental conditions in response to receiving the first incident RF signal; and A second SAW sensor, disposed on the piezoelectric material, is adapted to measure the environmental conditions of the environment in response to receiving either the first or second incident RF signal. The second SAW sensor includes a second IDT formed on a second region of the piezoelectric material, the second IDT generating a second SAW based on the environmental conditions in response to receiving either the first or second incident RF signal. The second IDT further receives the first SAW from the first IDT and generates a first oscillating potential associated with a first audio frequency of the received first SAW, and the second IDT is coupled to an RF antenna that outputs a first emitted RF signal according to the first oscillating potential; and the first SAW sensor is adapted to operate in a first frequency range and the second SAW sensor is adapted to operate in a second frequency range different from the first frequency range, wherein the first SAW sensor is disposed on a first surface of the substrate and the second SAW sensor is disposed on a second surface of the substrate.

Images