Self-heating effect temperature rise calculation method for common-source amplifier based on finfet device

Abstract

The application discloses a self-heating effect temperature rise calculation method of a common-source amplifier based on a FinFET device, and the steps include: 1, calculating the output transconductance of the FinFET device in the common-source amplifier, and calculating the transconductance change amount with and without the self-heating effect under different input voltages; 2, establishing a relationship model of the temperature rise caused by the self-heating effect of the FinFET device and the transconductance change amount and the input voltage; 3, calculating the ratio change amount of the output voltage and the input voltage of the common-source amplifier with and without the self-heating effect; 4, establishing a relationship model of the ratio change amount and the output transconductance change amount and the input voltage; 5, obtaining the relationship model of the temperature rise caused by the self-heating effect and the ratio change amount according to the two relationship models, and calculating the temperature rise caused by the self-heating effect, thereby characterizing the self-heating effect of the common-source amplifier of the analog circuit, and solving the problem that it is difficult to characterize the self-heating effect of the amplifier circuit under an advanced process.

Description

Technical Field

[0001] This invention relates to a method for calculating the temperature rise due to the self-heating effect of a common-source amplifier based on FinFET devices. It can be applied to the calculation of the temperature rise caused by the self-heating effect in the nano-application of common-source amplifiers and belongs to the field of amplifier self-heating effect characterization technology. Background Technology

[0002] As integrated circuit process dimensions continue to shrink and integration density increases, power density continues to rise. At advanced process node levels, FinFET technology offers advantages over conventional technologies in terms of power consumption, performance, and area. However, the increasing power density and the three-dimensional structure of transistors have led to the self-heating effect of semiconductor devices, which has become one of the most prominent and challenging research areas. In circuit applications, device temperatures can rise to hundreds of degrees Celsius, severely impacting overall circuit performance. Given the extremely small size of circuits based on advanced process nodes, characterizing their self-heating effect is a significant challenge in this research field. Summary of the Invention

[0003] To overcome the difficulty in characterizing the self-heating effect at the circuit level, this invention proposes a method for calculating the temperature rise of the self-heating effect in a common-source amplifier based on FinFET devices. This method aims to use the inherent characteristic parameters of the FinFET devices constituting the common-source amplifier to analyze the temperature rise of the self-heating effect, avoiding the use of additional temperature sensing circuits and materials in the application process. This solves the problem of characterizing the self-heating effect of amplifier circuits under advanced processes.

[0004] To achieve the above-mentioned objectives, the present invention adopts the following technical solution:

[0005] The present invention provides a method for calculating the temperature rise due to self-heating effect of a common-source amplifier based on FinFET devices, characterized by the following steps:

[0006] Step 1: Calculate the output transconductance g of the FinFET device in the common-source amplifier according to the transconductance calculation formula. m And calculate different input voltages V in Transconductance change Δg with and without self-heating effect m ;

[0007] Step 2: Use equation (1) to establish the relationship between the temperature rise T caused by the self-heating effect of the FinFET device and the transconductance change Δg. m Input voltage V in Relational model:

[0008] T = aV in 2 -bΔg m -c (1)

[0009] In equation (1), a is the input voltage V in The correlation coefficient, where b is the transconductance change Δg m The correlation coefficient, where c is a constant;

[0010] Step 3: Calculate the output voltage V of the common-source amplifier with and without self-heating effect. out With input voltage V in change in ratio

[0011] Step 4: Use equation (2) to establish the change in ratio. and the change in output transconductance Δg m Input voltage V in Relationship model between them:

[0012]

[0013] In equation (2), a0, b0, and c0 are three correlation coefficients, and d0 is a constant;

[0014] Step 5: Based on the two relationship models, obtain the temperature rise T and the change in ratio caused by the self-heating effect. The relationship model is used to calculate the temperature rise T caused by the self-heating effect.

[0015] The characteristic of the method for calculating the temperature rise of the self-heating effect of the common-source amplifier based on FinFET devices described in this invention is that the common-source amplifier consists of an N-type FinFET and a resistor R. D Composition; wherein, the gate G of the FinET device is connected to the AC input power supply V. in The positive terminal and the drain terminal D are connected to a resistor R. D Terminals 2, source S is grounded, resistor R D One end is connected to a DC power supply V. DD Output voltage V out Connect to the drain D of an N-type FinFET.

[0016] The N-type FinFET device constituting the amplifier is based on a 14-nanometer process.

[0017] The present invention provides an electronic device, including a memory and a processor, wherein the memory is used to store a program that supports the processor in executing any of the common-source amplifier self-heating effect temperature rise calculation methods, and the processor is configured to execute the program stored in the memory.

[0018] The present invention discloses a computer-readable storage medium on which a computer program is stored, wherein the computer program, when executed by a processor, performs the steps of any of the common-source amplifier self-heating effect temperature rise calculation methods.

[0019] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0020] 1. This invention analyzes the temperature rise of the circuit self-heating effect by using the characteristic parameters of the FinFET device constituting the common source amplifier, thus solving the current problem of difficulty in characterizing the self-heating effect of amplifier circuits. Experimental results show that the temperature rise calculated by the method of this invention is less than 1℃ different from that calculated by the BSIM-CMG self-heating effect network model.

[0021] 2. This invention uses the amplifier's own characteristic parameters to analyze the temperature rise due to self-heating, avoiding the use of additional temperature sensing circuits and materials in the application process, thereby saving costs and circuit design area. Attached Figure Description

[0022] Figure 1 This is a flowchart of the process of the method of the present invention. Detailed Implementation

[0023] In this embodiment, a method for calculating the temperature rise due to self-heating effect of a common-source amplifier based on a FinFET device is described below. Figure 1 As shown, this common-source amplifier consists of an N-type FinFET and a resistor R. D Composition; wherein, the gate G of the FinET device is connected to the AC input power supply V. in The positive terminal and the drain terminal D are connected to the resistor R. D Terminals 2, source S is grounded, resistor R D One end is connected to a DC power supply V. DD Output voltage V out Connect to the drain D of the FinFET.

[0024] Step 1: Calculate the output transconductance g of the FinFET device in the common-source amplifier according to the transconductance calculation formula. m And calculate different input voltages V in Transconductance change Δg with and without self-heating effect m ;

[0025] Step 2: Use equation (1) to establish the relationship between the temperature rise T caused by the self-heating effect of the FinFET device and the transconductance change Δg. m Input voltage V in Relational model:

[0026] T = aV in 2 -bΔgm -c (1)

[0027] In equation (1), a is the input voltage V in The correlation coefficient, where b is the transconductance change Δg m The correlation coefficient, where c is a constant;

[0028] Step 3: Use Hspice to simulate the output voltage to input voltage ratio, output transconductance, and temperature rise T caused by self-heating of the common-source amplifier with and without the BSIM-CMG self-heating effect model. SHE Calculate the output voltage V of the common-source amplifier with and without self-heating effect. out With input voltage V in change in ratio

[0029] Step 4: Use equation (2) to establish the change in ratio. and the change in output transconductance Δg m Input voltage V in Relationship model between them:

[0030]

[0031] In equation (2), a0, b0, and c0 are three correlation coefficients, and d0 is a constant;

[0032] Step 5: Based on the two relationship models, obtain the temperature rise T and the change in ratio caused by the self-heating effect. The relationship model is used to calculate the temperature rise T caused by the self-heating effect.

[0033] Step 6: Based on the temperature rise T and the change in ratio caused by the self-heating effect. The relationship, substituting different input voltages V in Change in ratio Calculate the temperature T and compare it with the T from step 3. SHE Comparative analysis was conducted to verify the effectiveness of the method.

[0034] Step 7: Based on the above implementation steps, calculate the following example as shown in Table 1.

[0035] Table 1

[0036]

[0037] As shown in Table 1, the self-heating effect temperature rise calculation method can effectively calculate the amplifier's self-heating effect, and the difference is less than 1℃.

[0038] In this embodiment, an electronic device includes a memory and a processor. The memory stores a program that supports the processor in executing the above-described method, and the processor is configured to execute the program stored in the memory.

[0039] In this embodiment, a computer-readable storage medium stores a computer program, which is executed by a processor to perform the steps of the above method.

Claims

1. A method for calculating the temperature rise due to self-heating effect of a common-source amplifier based on FinFET devices, characterized in that: The procedure is as follows: Step 1: Calculate the output transconductance g of the FinFET device in the common-source amplifier according to the transconductance calculation formula. m And calculate different input voltages V in Transconductance change Δg with and without self-heating effect m ; Step 2: Use equation (1) to establish the relationship between the temperature rise T caused by the self-heating effect of the FinFET device and the transconductance change Δg. m Input voltage V in Relational model: T=aV in 2 -bΔg m -c(1) In equation (1), a is the input voltage V in The correlation coefficient, where b is the transconductance change Δg m The correlation coefficient, where c is a constant; Step 3: Calculate the output voltage V of the common-source amplifier with and without self-heating effect. out With input voltage V in change in ratio Step 4: Use equation (2) to establish the change in ratio. and the change in output transconductance Δg m Input voltage V in Relationship model between them: In equation (2), a0, b0, and c0 are three correlation coefficients, and d0 is a constant; Step 5: Based on the two relationship models, obtain the temperature rise T and the change in ratio caused by the self-heating effect. The relationship model is used to calculate the temperature rise T caused by the self-heating effect.

2. The method for calculating the temperature rise due to self-heating effect of a common-source amplifier based on FinFET devices according to claim 1, characterized in that: The common-source amplifier consists of an N-type FinFET and a resistor R. D Composition; wherein, the gate G of the FinET device is connected to the AC input power supply V. in The positive terminal and the drain terminal D are connected to a resistor R. D Terminals 2, source S is grounded, resistor R D One end is connected to a DC power supply V. DD Output voltage V out Connect to the drain D of an N-type FinFET.

3. The method for calculating the temperature rise due to self-heating effect of a common-source amplifier based on FinFET devices according to claim 2, characterized in that: The N-type FinFET device constituting the amplifier is based on a 14-nanometer process.

4. An electronic device, comprising a memory and a processor, characterized in that, The memory is used to store a program that supports the processor in executing the common-source amplifier self-heating effect temperature rise calculation method according to any one of claims 1-3, and the processor is configured to execute the program stored in the memory.

5. A computer-readable storage medium storing a computer program thereon, characterized in that, When the computer program is run by the processor, it executes the steps of the method for calculating the temperature rise of the self-heating effect of the common source amplifier as described in any of claims 1-3.

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