Substrate processing apparatus and substrate processing method

Abstract

A substrate processing apparatus includes a nozzle unit including a nozzle tip that discharges a liquid to a substrate, and a liquid supply line that supplies the liquid to the nozzle unit, wherein the liquid supply line includes a liquid supply tube connected to the nozzle tip, a supply valve installed in the liquid supply tube, and a heater provided in the liquid supply tube between the nozzle tip and the supply valve.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2021-0192832, filed on December 30, 2021, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Background Technology 1. Technical Field

[0003] This disclosure relates to a substrate processing apparatus and a substrate processing method using the substrate processing apparatus.

[0004] 2. Description of related fields

[0005] Typically, in the manufacturing process of semiconductor devices, multiple film materials (such as polycrystalline films, oxide films, nitride films, metal films, etc.) can be formed on a wafer that serves as a semiconductor substrate. A photoresist film can be coated on the film material, and the pattern drawn on the photomask can be transferred to the photoresist film through an exposure process. Subsequently, the desired pattern can be formed on the wafer through an etching process.

[0006] Etching equipment used in the etching process can be classified as dry etching equipment or wet etching equipment. Wet etching equipment can be used to treat substrates using various liquids (such as etchants, cleaning solutions, and rinsing solutions). This substrate treatment equipment can perform the process of etching unwanted portions of the thin film formed on the substrate and cleaning foreign matter remaining on the treated surface of the substrate.

[0007] Figure 1 This diagram illustrates the relationship between etching rate and phosphoric acid temperature. High etching rates may require high-temperature phosphoric acid. Typically, an increase of 10°C in phosphoric acid temperature can increase the etching rate by 10%. Therefore, supplying the substrate with a high-temperature liquid may be important. For this purpose, the liquid can be heated and supplied in a liquid supply tank or similar device, and the liquid temperature may be reduced during the process of supplying the liquid to the nozzle unit through the liquid supply line. The higher the liquid temperature, the greater the temperature reduction. Furthermore, when additional additives are mixed with the liquid to increase the etching rate, the temperature reduction can be significantly affected by the temperature of the additional additives.

[0008] Prior art document 1: Korean Patent No. 10-1813897 Summary of the Invention

[0009] One aspect of this disclosure is to provide a substrate processing apparatus and a substrate processing method for discharging liquid at a high temperature.

[0010] According to one aspect of this disclosure, a substrate processing apparatus includes: a nozzle unit including: a nozzle tip for discharging liquid onto a substrate; and a liquid supply line for supplying liquid to the nozzle unit, wherein the liquid supply line includes: a liquid supply pipe connected to the nozzle tip; a supply valve installed in the liquid supply pipe; and a heater disposed in the liquid supply pipe between the nozzle tip and the supply valve.

[0011] In an embodiment, the nozzle unit may include: a nozzle arm extending to the upper side of the substrate; and a nozzle tip connected to the nozzle arm, wherein the liquid supply tube may include: a first supply tube connecting the liquid supply unit and the nozzle arm; and a second supply tube passing through the nozzle arm from the first supply tube and connected to the nozzle tip, wherein a heater may be mounted in the second supply tube.

[0012] In another embodiment, in addition to the above configuration, this disclosure may also include a liquid recovery line for recovering liquid from the liquid supply line, wherein the liquid recovery line may include a liquid recovery pipe branching off from the liquid supply line; a recovery valve installed on the liquid recovery pipe; and a cooler disposed in the liquid recovery pipe between the branch point of the liquid supply line and the recovery valve.

[0013] In this case, based on the branch point where the liquid recovery pipe branches, the second supply pipe may include a supply pipe section in which a heater is installed and a discharge pipe section connected to the nozzle tip, wherein at least a portion of the discharge pipe section may be positioned at a height level higher than the height level of the branch point.

[0014] As another embodiment, the liquid supply tube can be provided as a plurality of liquid supply tubes, wherein the plurality of liquid supply tubes can be connected to the nozzle tip and spaced apart from the nozzle arm.

[0015] Additionally, according to another aspect of this disclosure, a substrate processing apparatus includes: a processing chamber including a processing area and a maintenance area separated by a horizontal partition wall; a processing container installed in the processing chamber and having a processing space for processing a substrate; a support unit supporting the substrate in the processing space; a nozzle unit including a nozzle tip for discharging liquid to the substrate; and a liquid supply line for supplying liquid to the nozzle unit, wherein the nozzle unit includes a nozzle arm disposed in the processing area and extending to an upper side of the substrate; and a nozzle tip connected to the nozzle arm, wherein the liquid supply line includes a liquid supply pipe connected to the nozzle tip; a supply valve installed in the liquid supply pipe; and a heater installed in the liquid supply pipe between the nozzle tip and the supply valve.

[0016] According to another aspect of this disclosure, a substrate processing method includes: a discharge process of discharging liquid to a substrate through the nozzle tip of a nozzle unit, wherein the discharge process includes a supply operation of supplying liquid through a supply valve of a liquid supply line; a heating operation of heating the liquid passing through the supply valve with a heater; and a discharge operation of discharging the heated liquid from the nozzle tip. Attached Figure Description

[0017] The above and other aspects, features and advantages of this disclosure will be more clearly understood through the following detailed description taken in conjunction with the accompanying drawings, in which:

[0018] Figure 1 This is a graph illustrating the relationship between etching rate and phosphoric acid temperature.

[0019] Figure 2 This is a view illustrating the substrate processing apparatus using the present disclosure.

[0020] Figure 3 It is a diagram showing the heat resistance temperature of the component.

[0021] Figure 4 This is a view illustrating the configuration for heating liquid in a substrate processing apparatus according to the prior art.

[0022] Figure 5 This is a view illustrating the basic configuration of a heated liquid in a substrate processing apparatus according to the present disclosure.

[0023] Figure 6 This is a view illustrating a substrate processing apparatus according to an embodiment of the present disclosure.

[0024] Figure 7 This is a view illustrating a substrate processing apparatus according to another embodiment of the present disclosure.

[0025] Figure 8 This is a view illustrating a substrate processing apparatus according to another embodiment of the present disclosure.

[0026] Figure 9 This is a flowchart illustrating the emission process in the substrate processing method according to the present disclosure.

[0027] Figure 10 This is a flowchart illustrating a substrate processing method according to the present disclosure. Detailed Implementation

[0028] In the following description, preferred embodiments will be described in detail to enable those skilled in the art to readily practice this disclosure with reference to the accompanying drawings. However, in describing preferred embodiments of this disclosure in detail, detailed descriptions of related known functions or configurations will be omitted if it is determined that such detailed descriptions unnecessarily obscure the gist of the disclosure. Furthermore, the same reference numerals may be used throughout the drawings for parts having similar functions and operations. Additionally, in this specification, terms such as "on," "upper part," "upper surface," "under," "lower part," "lower surface," and "side surface" may be based on the drawings and, in fact, may be changed depending on the orientation of the components.

[0029] Furthermore, throughout the specification, when one part is "connected" to another, it may include not only "direct connection" but also "indirect connection" to other components in between. Additionally, unless otherwise specified, "including" a component means that other components are further included, not excluded.

[0030] Figure 2 This is a view illustrating the substrate processing apparatus to which this disclosure is applied.

[0031] Referring to the accompanying drawings, the substrate processing apparatus 1000 of this disclosure may include a processing chamber 100 for performing processing relative to a substrate W using a liquid. In the processing chamber 100, the process relative to the substrate W can be performed while the substrate W is held horizontally. This process may be an etching process of a nitride film formed on the substrate W. In this case, the liquid may contain phosphoric acid. Furthermore, the processing chamber 100 can be used for processes that remove foreign matter and film material remaining on the surface of the substrate W using various liquids.

[0032] Specifically, the processing chamber 100 can provide a sealed internal space, and a fan filter unit 110 can be installed in the upper part of the processing chamber 100. The fan filter unit 110 can generate a vertical airflow in the processing chamber 100. The fan filter unit 110 can be a unit in which the filter and the air supply fan are modularized into one unit, and can filter clean air and supply it to the processing chamber 100. Clean air can pass through the fan filter unit 110 and can be supplied to the processing chamber 100 to form a vertical airflow. This vertical airflow can provide a uniform airflow over the substrate W, and can discharge contaminants (fumes) generated during the treatment of the surface of the substrate W by the processing fluid along with the air and remove them to the discharge lines 131, 132 and 133 through the suction pipes 210, 220 and 230 of the processing container 200 to maintain a high level of cleanliness in the processing container.

[0033] The processing chamber 100 may include a processing area 100a and a maintenance area 100b separated by a horizontal partition wall 101. The drive member 293 of the lifting unit 290 and the drive member 430 of the nozzle unit 400 may be mounted on the horizontal partition wall 101. Additionally, the maintenance area 100b may be the space occupied by the discharge lines 131, 132, 133 connected to the processing container 200 and the exhaust member 120, and is preferably isolated from the processing area 100a of the processing substrate W.

[0034] The substrate processing apparatus 1000 of this disclosure may include a processing container 200, a support unit 300, and a nozzle unit 400 within a processing chamber 100. The processing container 200 may be mounted within the processing chamber 100, may have a cylindrical shape with an open upper surface, and may provide a processing space for processing a substrate W. The open upper surface of the processing container 200 may be provided as a channel for loading and unloading the substrate W. In this case, the support unit 300 may be located within the processing space. In this case, during the process, the support unit 300 may support the substrate W and may rotate the substrate W.

[0035] Additionally, the processing container 200 may provide an upper space 200a, in which the spin head 310 of the support unit 300 is located, and a lower space 200b, in which an exhaust duct 250 is connected to perform forced exhaust. The exhaust duct 250 may be connected to an exhaust member 120 extending into the external space of the processing chamber 100. Annular first suction duct 210, second suction duct 220, and third suction duct 230 for introducing and drawing in chemical liquids and gases scattered on the rotating substrate W may be arranged in multiple stages within the upper space 200a of the processing container 200. The first suction duct 210, second suction duct 220, and third suction duct 230 may have an exhaust port h communicating with a common annular space (corresponding to the lower space of the processing container).

[0036] In this configuration, the first suction pipe 210, the second suction pipe 220, and the third suction pipe 230 can provide a first recovery space RS1, a second recovery space RS2, and a third recovery space RS3, into which a gas stream of liquid and smoke scattered from the substrate W is introduced. The first recovery space RS1 can be separated by the first suction pipe 210, the second recovery space RS2 can be formed as a space spaced apart between the first suction pipe 210 and the second suction pipe 220, and the third recovery space RS3 can be formed as a space spaced apart between the second suction pipe 220 and the third suction pipe 230.

[0037] Additionally, the processing container 200 can be coupled to the lifting unit 290 for changing the vertical position of the processing container 200. The lifting unit 290 can linearly move the processing container 200 in the vertical direction. As the processing container 200 moves in the vertical direction, its relative height to the spin head 310 can be changed. The lifting unit 290 may include a support 291, a moving shaft 292, and a drive member 293. The support 291 can be fixedly mounted on the outer wall of the processing container 200, and the moving shaft 293, which can move vertically via the drive member 292, can be fixedly coupled to the support 291. When the substrate W is loaded into or unloaded from the spin head 310, the processing container 200 can descend, causing the spin head 310 to protrude above the processing container 200.

[0038] Furthermore, during the process, the height of the processing container 200 can be adjusted so that liquid is introduced into predetermined suction channels (e.g., 210, 220, and 230) according to the type of liquid supplied to the substrate W. Therefore, the relative vertical position between the processing container 200 and the substrate W can be changed. Thus, the processing container 200 can vary the type of liquid and contaminant gas recovered in each recovery space (e.g., RS1, RS2, and RS3).

[0039] The support unit 300 can be installed in the processing container 200. The support unit 300 can support the substrate W during the process and can be rotated by the drive member 330 during the process. Additionally, the support unit 300 can have a spin head 310 with a circular upper surface. A support shaft 320 supporting the spin head 310 can be connected to the lower part of the spin head 310, and the support shaft 320 can be rotated by the drive member 330 connected to the lower end of the support shaft 320. In this case, the drive member 330 can be provided as a motor or the like, and when the support shaft 320 is rotated by the drive member 330, the spin head 310 and the substrate W can be rotated.

[0040] Nozzle unit 400 can discharge liquid onto substrate W supported by support unit 300. In this case, the liquid may include phosphoric acid to etch a nitride film formed on substrate W. Typically, in substrate processing equipment, liquid (e.g., phosphoric acid) can be heated in a liquid supply tank (e.g., liquid supply unit) for etching and can be supplied to nozzle unit 400 via liquid supply line 500. In such substrate processing equipment, considering the acidity of the liquid used for etching, resin material can be used instead of metal for internal components. Figure 3As illustrated, in the valve, the maximum permissible temperature related to the heat resistance of the component can be approximately 180°C. Therefore, in the substrate processing apparatus according to the prior art, since the operating limit temperature of the component related to the liquid supply is set taking into account the heat resistance temperature of the component, the heating temperature of the liquid discharged to the substrate can be safely lower than the maximum permissible temperature of the valve, for example, approximately 165°C, and the temperature of the substrate can be further increased by indirect heating methods using heater H. For example, as an example of increasing the etching rate, such as... Figure 4 As illustrated, an indirect heating method can be employed, wherein the lower surface of the substrate W is heated by a heater H to increase the substrate temperature and further increase the temperature of the liquid discharged into the substrate W. In this indirect heating method, heating the substrate W to the desired appropriate temperature may take a considerable amount of time, and the temperature of the substrate W may rise unevenly overall.

[0041] In this disclosure, such as Figure 5 As illustrated, heater H can be installed to discharge liquid to substrate W under ultra-high temperature (above 200°C) conditions via direct heating. For example, this disclosure can be configured to discharge liquid through supply valve 520 to substrate W after heater H has been heated. For example, in this disclosure, heater H can be installed adjacent to supply valve 520, taking into account the thermal limit temperature of components such as valves.

[0042] Figure 6 This is a view illustrating a substrate processing apparatus according to an embodiment of the present disclosure.

[0043] Referring to the accompanying drawings, as described above, the substrate processing apparatus 1000 according to an embodiment of the present disclosure may include a liquid supply line 500 and a nozzle unit 400. In this case, the liquid supply line 500 may supply liquid to the nozzle unit 400 and may heat the liquid immediately before it is discharged from the nozzle tip 420.

[0044] The nozzle unit 400 may include a nozzle arm 410 and a nozzle tip 420. In this case, the nozzle arm 410 can be rotated and lifted by a drive member 430 mounted at the lower part. Moreover, the nozzle arm 410 can be mounted in the processing chamber 100 and can extend above the substrate W. In the processing region 100a corresponding to the upper space and the maintenance region 100b corresponding to the lower space, which are separated by a horizontal partition wall 101, the nozzle arm 410 can be mounted in the processing region 100a of the processing chamber 100. In addition, the nozzle tip 420 can be mounted in the end of the nozzle arm 410 and can be positioned above the substrate.

[0045] Additionally, the liquid supply line 500 may include a liquid supply pipe 510, a supply valve 520, and a heater H. The liquid supply pipe 510 may be connected to the nozzle tip 420, the supply valve 520 may be installed in the liquid supply pipe 510, and the heater H may be disposed between the nozzle tip 420 and the supply valve 520 in the liquid supply pipe 510.

[0046] Specifically, the liquid supply pipe 510 may include a first supply pipe 511 and a second supply pipe 512. The first supply pipe 511 may connect a liquid supply unit (not shown) and a nozzle arm 410. In this case, the first supply pipe 511 may have a structure that extends from the liquid supply unit, passes through the maintenance area of ​​the processing chamber, and is connected to the nozzle arm 410. Additionally, the second supply pipe 512 may extend from the first supply pipe 511, pass through the nozzle arm 410, and be connected to the nozzle tip 420. For example, the second supply pipe 512 may have one end connected to the first supply pipe 511 and extending through the nozzle arm 410, and another end connected to the nozzle tip 420. Furthermore, the first supply pipe 511 and the second supply pipe 512 may not have a physically separate configuration, and even when they are provided as a single supply pipe, the portion extending up to the nozzle arm 410 may be referred to as the first supply pipe 511, and the portion extending outward from the nozzle arm 410 may be referred to as the second supply pipe 512.

[0047] Furthermore, the supply valve 520 can be installed in the first supply pipe 511 of the liquid supply pipe 510. For example, the supply valve 520 can be installed in the first supply pipe 511 located in the maintenance area and can be located outside the nozzle arm 410. In addition, although not shown in the figures, the supply valve 520 is not limited thereto, and based on the supply direction of the liquid in the second supply pipe 512 passing through the nozzle arm 410, the supply valve 520 can be installed before the heater H.

[0048] Additionally, heater H can be installed in liquid supply pipe 510 and can be positioned between nozzle tip 420 and supply valve 520. For example, based on the supply direction of the liquid in liquid supply pipe 510, heater H can be positioned next to supply valve 520 to heat the liquid passing through supply valve 520. In this case, heater H can be installed in second supply pipe 512 passing through nozzle arm 410 to have a structure positioned in nozzle arm 410. Therefore, since heater H is positioned in nozzle arm 410 through which second supply pipe 512 passes, as close as possible to nozzle tip 420, heat loss during liquid inflow into nozzle tip 420 can be minimized. Heater H can have a configuration that heats liquid supply pipe 510 or the liquid in liquid supply pipe 510 to increase liquid temperature and is not limited to this disclosure; any conventional heating configuration can be used. As described above, in this disclosure, liquid passing through supply valve 520 can be heated by heater H in liquid supply line 500 to discharge liquid through nozzle tip 420 at ultra-high temperature. Therefore, this disclosure can shorten the etching time and increase the etching rate of liquids discharged at ultra-high temperatures.

[0049] In this case, the supply valve 520 may be the valve closest to the nozzle tip 420 among a plurality of valves installed in the liquid supply line 510.

[0050] Furthermore, in this disclosure, a first temperature sensor T1 for measuring the temperature of the liquid heated by the heater H can be installed in the liquid supply pipe 510. The first temperature sensor T1 can be electrically connected to a controller (not shown) of the control substrate processing apparatus 1000, such that the controller automatically controls the heater H based on the temperature data received from the first temperature sensor T1.

[0051] Figure 7 This is a view illustrating a substrate processing apparatus according to another embodiment of the present disclosure.

[0052] Referring to the attached diagram, except Figure 6 In addition to the configurations of the above embodiments, this disclosure Figure 7 An embodiment may include a configuration in which a liquid recovery line 600 can be connected to a liquid supply line 500 to circulate liquid. The liquid recovery line 600 may include a liquid recovery pipe 610, a recovery valve 620, and a cooler C. In this configuration, the liquid recovery pipe 610 may branch off from the liquid supply line 510, and the recovery valve 620 may be installed in the liquid recovery pipe 610. Additionally, the cooler C may be positioned between the branch point P from the liquid supply line 510 in the liquid recovery pipe 610 and the recovery valve 620.

[0053] Specifically, the liquid recovery pipe 610 may include a first recovery pipe 611 and a second recovery pipe 612. The first recovery pipe 611 may branch off from the second supply pipe 512 of the liquid supply pipe 510 and may pass through the nozzle arm 410. Additionally, the second recovery pipe 612 may extend from the first recovery pipe 611 to the external space of the nozzle arm 410. For example, the second recovery pipe 612 may have one end connected to the first recovery pipe 611 and extending outside the maintenance area of ​​the processing chamber. As an example, liquid can be returned to the liquid supply unit (not shown, e.g., a liquid supply tank) via the second recovery pipe 612 and can be supplied again from the liquid supply tank via the liquid supply pipe 510. Furthermore, the first recovery pipe 611 and the second recovery pipe 612 may not be physically separated, and even when they are provided as a single supply pipe, the portion up to the lower end of the nozzle arm 410 may be referred to as the first recovery pipe 611, and the portion extending outward from the lower end of the nozzle arm 410 may be referred to as the second recovery pipe 612.

[0054] Furthermore, the recovery valve 620 can be installed in the second recovery pipe 612 of the liquid recovery pipe 610. For example, the recovery valve 620 can be installed in the second supply pipe 512 located in the maintenance area, and can be located outside the nozzle arm 410. In addition, although not shown in the figures, the recovery valve 620 is not limited to this, and can be installed after the cooler C based on the recovery direction of the liquid in the first recovery pipe 611 passing through the nozzle arm 410.

[0055] Additionally, a cooler C can be installed in the liquid recovery line 610 and can be positioned between the branch point P from the liquid supply line 510 and the recovery valve 620. Such a cooler C can be installed in the second recovery line 612. Before or after the etching process is performed, the liquid can circulate through the liquid recovery line 600 without being discharged through the nozzle tip 420. During this circulation, since the second recovery line 612 is cooled by the cooler C to lower the liquid temperature, components such as the recovery valve 620 of the liquid recovery line 600 may not be subject to thermal damage. For example, the liquid can be cooled by the cooler C during circulation to be maintained above or below the heat resistance allowable temperature of components included in the liquid recovery line 600 (such as the recovery valve 620).

[0056] The second supply pipe 512 may include a supply pipe portion 512a and a discharge pipe portion 512b. For example, the second supply pipe 512 may be divided into a supply pipe portion 512a and a discharge pipe portion 512b. Based on the branch point P where the liquid recovery pipe 610 branches, the supply pipe portion 512a may be the portion in which the heater H is installed. Additionally, the discharge pipe portion 512b may be the portion connected to the nozzle tip 420 based on the branch point P. With the supply valve 520 of the liquid supply pipe 510 open, the recovery valve 620 may be closed when liquid is discharged, and may be opened when liquid is circulated. When the heater H is installed in the liquid supply pipe 510, the liquid supply pipe 510 may also be heated to ultra-high temperatures (above 200°C) by the heater H. Therefore, components that cannot withstand ultra-high temperatures (such as valves) may not be installed between the heater H and the nozzle tip 420. Therefore, this disclosure may take the form of a structure in which at least a portion of the discharge pipe portion 512b is disposed above the branch point P.

[0057] As a specific example, as illustrated in the accompanying drawings, the discharge pipe section 512b can be arranged to extend from the branch point P toward the nozzle tip 420, rising and then falling. When liquid is discharged, the recovery valve 620 can be closed. Due to the closure of the recovery valve 620, the liquid level at the branch point P can gradually increase to discharge the portion of liquid in the discharge pipe section 512b that is higher than the height level at the branch point P through the nozzle tip 420. When the recovery valve 620 is opened to circulate liquid, the discharge of liquid through the nozzle tip 420 may not be possible because the liquid level at the branch point P does not increase, for example, due to head difference (level difference). As described above, in this disclosure, even when the heater H is installed in the nozzle unit 400, either liquid discharge or circulation can be selected and performed without configuring a valve.

[0058] Additionally, in this disclosure, a first temperature sensor T1 can be installed in the liquid supply pipe 510 to measure the temperature of the liquid heated by the heater H. Furthermore, a second temperature sensor T2 can be installed in the liquid recovery pipe 610 to measure the temperature of the liquid cooled by the cooler C. The first temperature sensor T1 and the second temperature sensor T2 can be electrically connected to a controller (not shown) for controlling the substrate processing apparatus 1000, such that the controller automatically controls the heater H and the cooler C based on the temperature data received from the first temperature sensor T1 and the second temperature sensor T2.

[0059] Additionally, the second supply pipe 512 and the first recovery pipe 611 passing through the nozzle arm 410 can be formed of a quartz-containing material. The nozzle arm 410 can also be heated to very high temperatures by a heater H disposed within the nozzle arm 410, and the second supply pipe 512 and the first recovery pipe 611 can be formed of a quartz material with excellent heat resistance, thus improving durability. In this case, the first supply pipe 511 and the second recovery pipe 612, located where the heater H is not disposed (e.g., located outside the nozzle arm 410), can be formed of a resin-containing material instead of a quartz material.

[0060] exist Figure 7 Among the components not described in the text, those having the same Figure 6 Components with the same reference numerals in the accompanying drawings may be the same components, therefore their detailed descriptions will be omitted.

[0061] Figure 8 This is a view illustrating a substrate processing apparatus according to another embodiment of the present disclosure.

[0062] Referring to the accompanying drawings, in this disclosure, with Figure 6 and 7 In a different embodiment illustrated, the heater H can be positioned outside the nozzle arm 410. For example, in Figure 6 Implementation examples and Figure 7 In another embodiment, the heater H can be disposed in the nozzle arm 410, but... Figure 8 In another embodiment, the heater H can be disposed outside the nozzle arm 410. Specifically, Figure 8 The illustrated liquid supply pipe 510' may not pass through the nozzle arm 410 and may be spaced apart from the nozzle arm 410. Therefore, the liquid supply pipe 510' can directly supply liquid to the nozzle tip 420 without passing through the nozzle arm 410. A heater H may be installed between the supply valve 520' closest to the nozzle tip 420 in the liquid supply pipe 510' and the nozzle tip 420. Therefore, when liquid is supplied to the nozzle tip 420 through the liquid supply pipe 510', the heater H can heat the liquid passing through the supply valve 520' to discharge the liquid to the substrate W at ultra-high temperatures. In this case, the supply valve 520' may be located within the liquid supply pipe 510' in the processing area 100a of the processing chamber 100. Furthermore, the liquid supply pipe 510' may be provided as a plurality of liquid supply pipes 510', which may be connected to the nozzle tip 420, and the heater H may be installed in at least one of the liquid supply pipes 510'.

[0063] In addition, Figure 8 Among the components not described in the text, those having the same Figure 6Components with the same reference numerals in the accompanying drawings may be the same components, therefore their detailed descriptions will be omitted.

[0064] The substrate processing method using the substrate processing apparatus 1000 according to this disclosure will be referred to below. Figure 9 describe.

[0065] based on Figures 6 to 8 Reference Figure 9 The substrate processing method may include a discharge process S200 in which liquid is discharged to the substrate W through the nozzle tip 420 of the nozzle unit 400. The discharge process S20 may include a supply operation S210, a heating operation S220, and a discharge operation S230. In the supply operation S210, liquid can be supplied through the supply valve 520 of the liquid supply line 500. Additionally, in the heating operation S220, the liquid passing through the supply valve 520 can be heated by the heater H of the liquid supply line 500. Finally, the discharge operation S230 can discharge the heated liquid from the nozzle tip 420. Therefore, the discharge process S200, performed in the order of supply operation S210, heating operation S220, and discharge operation S230, allows the liquid to be heated by the heater H before being discharged through the supply valve 520, discharging it to the substrate W at an ultra-high temperature, thereby shortening the etching time and increasing the etching rate.

[0066] Specifically, based on Figure 6 and 7 Reference Figure 9 Before discharging the liquid, the nozzle arm 410 can be heated by the heater H to discharge the liquid. Specifically, when the liquid supply line 500 passes through the nozzle arm 410 of the nozzle unit 400, the liquid in the liquid supply line 500 can be heated by the heater H in the nozzle arm 410 before discharging the liquid from the nozzle tip 420 in the heating operation S220. In addition, the liquid can be preheated by a preheater (not shown) before the liquid reaches the nozzle unit 400.

[0067] Moreover, based on Figure 7 Reference Figure 10This disclosure may also include a first circulation process S100. The first circulation process S200 may be performed as a preparation process prior to the discharge process S200. In this case, the liquid recovery line 600 may be connected to the liquid supply line 500, for example, the liquid recovery line 600 including the recovery valve 620 may branch off from the liquid supply line 500. Specifically, in the first circulation process S100, the supply valve 520 of the liquid supply line 500 and the recovery valve 620 of the liquid recovery line 600 may be opened to recover and circulate the liquid supplied from the liquid supply line 500 to the liquid recovery line 600 via the nozzle unit 400. Conversely, in the discharge process S200, the recovery valve 620 may be closed to discharge the liquid via the nozzle unit 400 without it being recovered to the liquid recovery line 600. In the first circulation process S100, the heater H of the liquid supply line 500 and the cooler C of the liquid recovery line 600 may be operated. In this disclosure, a first circulation process S100 can be performed before the discharge process S200 to gradually heat the liquid by the heater H. Additionally, the cooler C can cool the liquid recovered through the liquid recovery line 600, preventing thermal damage to components such as valves in the liquid recovery line.

[0068] Furthermore, in this disclosure, when the liquid rises to the target temperature for discharge via the heater H in the first circulation process S100, the first circulation process S100 can be converted into a discharge process S200. In the discharge process S200, the recovery valve 620 can be closed to raise the liquid level in the liquid supply line 500 to the branch point P where the liquid recovery line 600 branches downward, so that the liquid can be discharged through the nozzle tip 420. Conversely, in the first circulation process S100, because the recovery valve 620 is open, the liquid level may be lower than the branch point P, for example, the liquid may not be discharged due to head difference (level difference).

[0069] This disclosure may also include a second cycle process S300. The second cycle process S300 may be a process following the discharge process S200, and may be a process of opening the recovery valve 620 and stopping the operation of the heater H. In this second cycle step S300, the liquid heated in the discharge process S200 may be cooled by the cooler C.

[0070] Furthermore, this disclosure may also include a standby process S400. The standby process S400 may be a process of closing the supply valve 520 and the recovery valve 620 and stopping the operation of the cooler C. In this disclosure, when the liquid drops below the set temperature through the cooler C in the second circulation process S300, the second circulation process S300 can be converted into a standby process S400. Moreover, in this disclosure, after the standby process S400, the aforementioned first circulation process S100 can be executed again.

[0071] This disclosure can be configured such that the heater heats the liquid passing through the supply valve of the liquid supply line, so as to have the effect of shortening the etching time and increasing the etching rate when the liquid is discharged to the substrate at a high temperature.

[0072] Although exemplary embodiments have been illustrated and described above, it will be apparent to those skilled in the art that modifications and variations may be made without departing from the scope of this disclosure as defined by the appended claims.

Claims

1. A substrate processing apparatus, comprising: The nozzle unit includes a nozzle tip and a nozzle arm for discharging liquid onto a substrate; A liquid supply line supplies the liquid to the nozzle unit, and A liquid recovery line, including a liquid recovery pipe branching off from the liquid supply pipe of the liquid supply line for recovering the liquid from the liquid supply line. The liquid supply line includes: The liquid supply tube is connected to the nozzle tip and passes through the nozzle arm; A supply valve is installed in the liquid supply pipe; and A heater is disposed between the nozzle tip and the supply valve in the liquid supply pipe; and The liquid supply pipe includes a branch point between the supply valve and the nozzle tip. The branch point is the junction of the liquid supply pipe connecting the discharge pipe portion of the nozzle tip and the liquid recovery pipe branch of the liquid recovery line. The discharge pipe portion extends at least partially from the branch point toward the nozzle tip, rises, and then falls. The liquid recovery line includes a recovery valve mounted on the liquid recovery line, such that the liquid recovery line is configured to open and close such that, when the supply valve is open, closing the liquid recovery line causes the liquid level at the branch point to rise, so that the liquid is discharged through the nozzle tip; or opening the liquid recovery line causes the liquid level at the branch point not to rise, so that discharge through the nozzle tip is not performed.

2. The substrate processing apparatus according to claim 1, wherein the nozzle unit comprises: The nozzle arm extends to the upper side of the substrate; as well as The nozzle tip is connected to the nozzle arm. The liquid supply pipe includes: The first supply pipe connects the liquid supply unit and the nozzle arm; as well as A second supply tube extends from the first supply tube through the nozzle arm and is connected to the nozzle tip. The heater is installed in the second supply pipe.

3. The substrate processing apparatus according to claim 2, The liquid recovery pipeline includes: A cooler is disposed in the liquid recovery pipe between the branch point from the liquid supply pipe and the recovery valve.

4. The substrate processing apparatus according to claim 3, wherein the liquid recovery tube comprises: A first recovery tube branches off from the second supply tube and passes through the nozzle arm; as well as A second recovery tube extends from the first recovery tube into the external space of the nozzle arm. The cooler is installed in the first recovery pipe.

5. The substrate processing apparatus of claim 4, wherein the supply valve is disposed in the first supply pipe and the recovery valve is disposed in the second recovery pipe.

6. The substrate processing apparatus of claim 4, wherein the first supply tube and the second recovery tube disposed in the external space of the nozzle arm are formed of a resin-containing material, and The second supply tube and the first recovery tube, which pass through the nozzle arm, are formed of a quartz-containing material, and the heater is disposed in the nozzle arm.

7. The substrate processing apparatus of claim 3, wherein, based on the branching point where the liquid recovery pipe branches, the second supply pipe includes a supply pipe portion in which the heater is mounted and a discharge pipe portion connected to the nozzle tip. The discharge pipe section rises from the branch point to its highest point, which is positioned above the height level of the nozzle tip, and then descends toward the nozzle tip, with the lowest point of the discharge pipe section positioned below the height level of the branch point.

8. The substrate processing apparatus of claim 3, wherein a first temperature sensor is installed in the liquid supply pipe for measuring the temperature of the liquid heated by the heater, and a second temperature sensor is installed in the liquid recovery pipe for measuring the temperature of the liquid cooled by the cooler.

9. The substrate processing apparatus of claim 1, wherein the liquid supply pipe is provided as a plurality of liquid supply pipes. The plurality of liquid supply tubes are connected to the nozzle tip and spaced apart from the nozzle arm.

10. The substrate processing apparatus of claim 1, wherein the supply valve is the valve closest to the nozzle tip among a plurality of valves installed in the liquid supply pipe.

11. A substrate processing apparatus, comprising: The processing room includes a processing area and a maintenance area separated by horizontal partition walls; A processing container is installed in the processing chamber and has a processing space with a processing substrate; Support unit, supporting the substrate in the processing space; A nozzle unit, comprising a nozzle tip for discharging liquid onto the substrate; A liquid supply line supplies the liquid to the nozzle unit, and A liquid recovery line, including a liquid recovery pipe branching off from the liquid supply pipe of the liquid supply line for recovering the liquid from the liquid supply line. The nozzle unit includes: a nozzle arm disposed in the processing area and extending to the upper side of the substrate, and a nozzle tip connected to the nozzle arm; The liquid supply line includes: a liquid supply pipe connected to the nozzle tip, a supply valve installed in the liquid supply pipe, and a heater installed in the liquid supply pipe between the nozzle tip and the supply valve, the liquid supply pipe passing through the nozzle arm; and The liquid supply pipe includes a branch point between the supply valve and the nozzle tip. The branch point is the junction of the liquid supply pipe connecting the discharge pipe portion of the nozzle tip and the liquid recovery pipe branch of the liquid recovery line. The discharge pipe portion extends at least partially from the branch point toward the nozzle tip, rises, and then falls. The liquid recovery line includes a recovery valve mounted on the liquid recovery line, such that the liquid recovery line is configured to open and close such that, when the supply valve is open, closing the liquid recovery line causes the liquid level at the branch point to rise, so that the liquid is discharged through the nozzle tip; or opening the liquid recovery line causes the liquid level at the branch point not to rise, so that discharge through the nozzle tip is not performed.

12. The substrate processing apparatus of claim 11, wherein the liquid supply pipe comprises: A first supply pipe connects the liquid supply unit and the nozzle arm, and passes through the maintenance area of ​​the treatment chamber; as well as A second supply tube extends from the first supply tube through the nozzle arm and is connected to the nozzle tip. The heater is installed in the second supply pipe.

13. The substrate processing apparatus according to claim 12, The liquid recovery pipeline includes: A cooler is disposed in the liquid recovery pipe between the branch point from the liquid supply pipe and the recovery valve. Based on the branching point where the liquid recovery pipe branches, the second supply pipe includes a supply pipe portion in which the heater is installed and a discharge pipe portion connected to the nozzle tip. The discharge pipe section rises from the branch point to its highest point, which is positioned above the height level of the nozzle tip, and then descends toward the nozzle tip, with the lowest point of the discharge pipe section positioned below the height level of the branch point.

14. A substrate processing method, comprising: The discharge process involves discharging liquid onto the substrate through the nozzle tip of the nozzle unit. The emission process mentioned above includes: The supply operation of the liquid is performed by supplying the liquid through the supply valve of the liquid supply line; A heating operation in which the liquid passing through the supply valve is heated by a heater disposed in the liquid supply pipe between the nozzle tip and the supply valve; The liquid recovery line branches off from the liquid supply line to recover the liquid from the liquid supply line. The liquid supply line includes a liquid supply line with a branch point between a supply valve and a nozzle tip. This branch point is the junction where the discharge portion of the liquid supply line connects to the nozzle tip and the branch of the liquid recovery line. The discharge pipe portion at least partially rises from the branch point toward the nozzle tip and then descends. The liquid recovery line includes a recovery valve mounted on the liquid recovery line, such that the liquid recovery line is configured to open and close such that, when the supply valve is open, closing the liquid recovery line causes the liquid level at the branch point to rise, allowing the liquid to be discharged through the nozzle tip; or opening the liquid recovery line causes the liquid level at the branch point to not rise, thus preventing discharge through the nozzle tip; and The discharge operation of discharging the heated liquid from the tip of the nozzle.

15. The method of claim 14, wherein the liquid supply line passes through the nozzle arm of the nozzle unit, and in the heating operation, the liquid is heated in the nozzle arm by the heater before it is discharged from the nozzle tip.

16. The method according to claim 15, wherein, Before the heating operation, and before the liquid reaches the nozzle unit, the liquid is preheated by a preheater.

17. The method of claim 15, wherein The method also includes a first cycle process performed as a preparation process prior to the emission operation. During the first cycle, the supply valve and the recovery valve are opened to recover the liquid supplied to the liquid recovery line through the liquid supply line, and the liquid is circulated. The heater and cooler of the liquid recovery pipeline are operated during the first cycle.

18. The method according to claim 16, wherein, When the liquid rises through the heater to the target temperature for discharge, the first cycle process is converted into the discharge operation, and During the discharge operation, the recovery valve is closed so that the liquid level in the liquid supply line is higher than the level of the branch point where the liquid recovery pipe branches downward.

19. The method of claim 16, further comprising: As a follow-up to the emission operation, a second cycle process is performed, in which the recovery valve is opened and the operation of the heater is stopped.

20. The method of claim 19, further comprising a standby process of closing the supply valve and the recovery valve and stopping the operation of the cooler. in, When the liquid drops below a set temperature through the cooler, the standby process is converted into the second cycle process.

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