Substrate processing equipment and substrate processing methods

Abstract

This disclosure provides a substrate processing apparatus, comprising: a nozzle unit configured to discharge a processing liquid to a substrate; a conduit connected to the nozzle unit and a processing liquid supply unit for supplying the processing liquid; a charge quantity control unit disposed at the conduit, including a filter unit carrying a positive or negative charge, and including at least one of a control valve and a power supply unit, wherein the control valve controls the flow rate of the processing liquid passing through the interior of the filter unit, and the power supply unit applies a voltage to the filter unit to control the charge quantity of the processing liquid; and a control unit connected to the charge quantity control unit.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2021-0193592, filed with the Korean Intellectual Property Office on December 31, 2021, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] The present invention relates to substrate processing apparatus and substrate processing method, and more specifically, to substrate processing apparatus and substrate processing method that can adjust the state of charge of a substrate by controlling the charge amount of the processing liquid passing through a filtration unit and discharging the processing liquid. Background Technology

[0004] Substrate processing equipment is used in semiconductor manufacturing processes. This equipment supplies a processing liquid to a substrate (such as a semiconductor wafer) to perform liquid processing. In such equipment, a porous filter with a predetermined charge can be used to remove impurities such as metallic materials from the liquid. During substrate processing, static electricity from the processing liquid discharged from the nozzle towards the substrate or from the substrate itself can cause particles to adhere to the substrate, leading to contamination, or static electricity can be discharged to the substrate, resulting in defects.

[0005] Various methods have been proposed to address the aforementioned problems. For example, methods such as coating the nozzle portion configured to discharge the processing liquid with an antistatic material to neutralize the charge of the processing liquid, and irradiating the processing liquid discharged from the nozzle portion with light to neutralize the charge of the processing liquid have been applied. Summary of the Invention

[0006] One aspect of this disclosure is to provide a substrate processing apparatus and a substrate processing method that can effectively adjust the state of charge of a substrate.

[0007] According to one aspect of the invention, a substrate processing apparatus includes: a nozzle unit configured to discharge a processing liquid to a substrate; a conduit connected to the nozzle unit and a processing liquid supply unit for supplying the processing liquid; a charge quantity control unit disposed at the conduit, including a filter unit carrying a positive or negative charge, and including at least one of a control valve and a power supply unit, wherein the control valve controls the flow rate of the processing liquid passing through the interior of the filter unit, and the power supply unit applies a voltage to the filter unit to control the charge quantity of the processing liquid; and a control unit connected to the charge quantity control unit.

[0008] According to another aspect of this disclosure, a substrate processing apparatus includes: a processing container providing space for processing a substrate; a substrate support member disposed inside the processing container to support the substrate; a nozzle unit including a nozzle tip, a nozzle arm, and a nozzle arm support member, the nozzle tip for discharging processing liquid to the substrate, the nozzle arm having an end to which the nozzle tip is connected, and the nozzle arm support member configured to support the nozzle arm; a conduit having a portion disposed inside the nozzle arm and connected to the nozzle tip and a processing liquid supply unit for supplying processing liquid; a charge control unit including a first positively charged filter and a second negatively charged filter disposed in parallel, and a control valve disposed at a confluence downstream of the conduit containing the first and second filters and configured to control the flow rate of the processing liquid passing through the first and second filters; a detection unit configured to detect the state of charge of the substrate; and a control unit connected to the control valve and the detection unit to control the control valve according to the state of charge of the substrate detected by the detection unit.

[0009] According to another aspect of this disclosure, a substrate processing method includes: a detection operation to detect the state of charge of the substrate; a control operation to control the amount of charge of a processing liquid passing through a filter unit that carries a positive or negative charge according to the detected state of charge of the substrate; and a discharge operation to discharge the processing liquid having a controlled amount of charge to the substrate. Attached Figure Description

[0010] The above and other aspects, features and advantages of this disclosure will become clearer from the following detailed description taken in conjunction with the accompanying drawings.

[0011] Figure 1 This is a schematic diagram of a substrate processing apparatus according to an exemplary embodiment.

[0012] Figure 2 This is a schematic diagram of a filter unit installed in a substrate processing apparatus according to an exemplary embodiment.

[0013] Figure 3 This is a schematic cross-sectional view of a filter unit disposed in a substrate processing apparatus according to an exemplary embodiment.

[0014] Figure 4 It is an application Figure 3 A schematic diagram of a substrate processing device for a filter unit.

[0015] Figure 5 This is a schematic cross-sectional view of another filter unit disposed in a substrate processing apparatus according to an exemplary embodiment.

[0016] Figure 6 This is a schematic diagram of a substrate processing apparatus according to an exemplary embodiment, which applies a filter unit having a different structure.

[0017] Figure 7 and Figure 8 This is a schematic diagram of a substrate processing apparatus according to an exemplary embodiment, showing different voltage difference measurement locations.

[0018] Figure 9 This is a schematic diagram of a substrate processing apparatus according to another exemplary embodiment.

[0019] Figure 10 This is a schematic diagram of a substrate processing apparatus according to another exemplary embodiment.

[0020] Figure 11 This is a flowchart illustrating a substrate processing method according to an exemplary embodiment. Detailed Implementation

[0021] In the following, preferred embodiments will be described in detail with reference to the accompanying drawings to enable those skilled in the art to readily practice this disclosure. However, in describing preferred embodiments of this disclosure in detail, detailed descriptions of related known functions or configurations will be omitted if it is determined that such detailed descriptions would unnecessarily obscure the essential points of this disclosure. Furthermore, the same reference numerals may be used throughout the drawings for components having similar functions and operations. Additionally, in this specification, terms such as "upper," "upper portion," "upper surface," "lower," "lower portion," "lower surface," and "side surface" may be based on the drawings and can, in practice, vary depending on the orientation of the components.

[0022] Furthermore, throughout the specification, when one part is "connected" to another, it can include not only "direct connection" but also "indirect connection" with other components interposed therebetween. Moreover, unless otherwise stated, "including" a component means including other components, not excluding them.

[0023] Substrate processing equipment is typically used in semiconductor manufacturing processes. This equipment supplies a processing liquid to a substrate (such as a semiconductor wafer) to perform liquid processing. During substrate processing, the processing liquid discharged from the nozzles towards the substrate, or static electricity on the substrate, can cause particles to adhere to the substrate, leading to contamination, or static electricity can be discharged onto the substrate, resulting in defects.

[0024] Various methods have been proposed to address the aforementioned problems. These methods include: coating the nozzle portion configured to discharge the processing liquid with an antistatic material to neutralize the charge of the processing liquid; and irradiating the processing liquid discharged from the nozzle portion with light to neutralize the charge of the processing liquid, etc. However, in these methods, the processing liquid is discharged to the substrate in a state where its charge is neutralized. Therefore, it is impossible to control the presence of static electricity in the substrate, or the state in which the substrate becomes charged due to friction.

[0025] Exemplary embodiments provide a substrate processing apparatus. The substrate processing apparatus according to the exemplary embodiments can be used in various processes. As an example, the substrate processing apparatus according to the exemplary embodiments can be used in a photolithography process. For example, the substrate processing apparatus according to the exemplary embodiments can be used in coating operations, cleaning operations, developing operations, etc., to supply a processing liquid such as photoresist, diluent, cleaning solution, developer, etc., to a substrate using a processing liquid supply device for processing the substrate. Furthermore, the substrate processing apparatus according to the exemplary embodiments can also be used in other processes such as cleaning processes.

[0026] In the following, a first embodiment and a second embodiment of the substrate processing apparatus according to exemplary embodiments will be described with reference to the accompanying drawings.

[0027] First Implementation Method

[0028] First Embodiment

[0029] Reference Figures 1 to 4 A first embodiment of a substrate processing apparatus is described.

[0030] Figure 1 This is a schematic diagram of a substrate processing apparatus according to the first embodiment. (Reference) Figure 1 According to an exemplary embodiment, the substrate processing apparatus may include: a processing container 1 disposed inside a sealed processing chamber and providing space therein for processing a substrate W; a substrate support member 2 disposed inside the processing container 1 to support the substrate W; and a processing liquid supply module for supplying processing liquid to the substrate W.

[0031] The processing container 1 can receive the processing liquid that spreads from the substrate W when the processing liquid is discharged, and the processing liquid can be recovered through the processing liquid recovery line 6 of the processing container 1. The processing container 1 can be raised and lowered relative to the support member 2 by the lifting unit 5.

[0032] The substrate support member 2 may include a rotary chuck 3 and a drive unit 4 for driving the rotary chuck 3. The rotary chuck 3 supports the substrate W, allowing the substrate W to rotate and move vertically within the processing container 1. Therefore, when processing the substrate W, processing liquid can be supplied to the substrate W through the processing liquid supply unit while the substrate W is rotated and supported by the rotary chuck 3, in order to process the substrate W.

[0033] The processing fluid supply module may include a processing fluid supply unit 10, a nozzle unit 20, a pipeline 30, and a charge control unit 40.

[0034] The processing liquid supply unit 10 is configured to store processing liquid or supply the stored processing liquid to the nozzle unit 20, and can be connected via a conduit 30 to the nozzle unit 20 for discharging processing liquid toward the substrate W, thereby supplying processing liquid to the nozzle unit 20. The processing liquid stored in the processing liquid supply unit 10 can be a photosensitive liquid, a coating solution such as a diluent or developer, a deionized liquid, a cleaning liquid, etc., but is not limited to these. The substrate processing method can be performed by applying various processing liquids according to actual process requirements.

[0035] The nozzle unit 20 can discharge processing liquid to the substrate W and can be connected to the processing liquid supply unit 10 via the conduit 30. The nozzle unit 20 may include a nozzle tip 21 for discharging processing liquid to the substrate W and a nozzle arm 22 having one end to which the nozzle tip 21 is connected. The other end of the nozzle arm 22 may be connected to a nozzle arm support member 23, so that the nozzle arm 22 can be moved as needed via the nozzle arm support member 23.

[0036] The charge control unit 40 is located in the pipe 30 between the treatment liquid supply unit 10 and the nozzle unit 20, and can be configured to change the charge of the treatment liquid discharged through the nozzle unit 20.

[0037] Furthermore, the filter unit 50 can be disposed in the pipe 30 adjacent to the nozzle tip 21 to precisely control the charge of the treatment liquid discharged from the nozzle tip 21. For example, a portion of the pipe 30 can be disposed inside the nozzle arm 22, and the filter unit 50 can be disposed in the nozzle arm 22 adjacent to the nozzle tip 21.

[0038] The charge control unit 40 may include a filter unit 50 with a positive or negative charge, and may include a control valve 60 that controls the flow rate of the processing liquid passing through the interior of the filter unit 50, thereby being configured to control the charge of the processing liquid passing through the filter unit 50.

[0039] In this disclosure, it should be noted that "the filter unit 50 is configured to carry a negative or positive charge" means that the filter unit 50 may be pre-charged with a negative or positive charge, as in the first embodiment, by means of plasma treatment or the like, or that the filter unit 50 may be charged with a negative or positive charge due to friction with the treatment liquid as the treatment liquid containing materials that may easily carry a negative or positive charge passes through it, or that the filter unit 50 may be charged with a negative or positive charge, as in the second embodiment, by means of a charging device that applies a voltage as needed.

[0040] In the first embodiment, a control valve 60 that controls the flow rate of the treatment fluid passing through the interior of the filter unit 50 will be described, excluding a charge control unit 40 with a power supply component. In this case, the filter unit 50 may include a material pre-charged with a negative or positive charge, or a material that readily carries a negative or positive charge, as will be referred to below. Figures 1 to 4 Detailed description.

[0041] When ions in the processing liquid pass through the filter unit 50 carrying this specific charge, a flowing current can be generated. Therefore, after the processing liquid passes through the filter unit 50, a predetermined amount of charge can be added, so that the processing liquid can carry a specific charge and be discharged to the substrate W through the nozzle unit 20.

[0042] Furthermore, the substrate processing apparatus may include a control unit 80 that controls the amount of charge on the processing liquid in the conduit 30. For example, in this embodiment, the control unit 80 may be configured to control a control valve 60 that controls the flow rate of the processing liquid passing through the filter unit 50 of the charge control unit 40 based on the state of charge of the substrate W.

[0043] The control unit 80 can control the amount of charge of the processing liquid that has passed through the filter unit 50 in various ways. The filter unit 50 may include multiple filters, allowing the control unit 80 to control the amount of charge of the processing liquid through selective channels based on the state of charge of the substrate W. Furthermore, the filter unit 50 may include multiple filters, allowing the control unit 80 to control the amount of charge of the processing liquid by adjusting the flow rate of the processing liquid passing through each filter based on the state of charge of the substrate W. Figure 1 In the diagram, the filter unit 50 is shown to include two filters, but the number of filters is not limited to this, and the filter unit 50 may include a single filter or three or more filters as needed.

[0044] According to the substrate processing apparatus of the first embodiment, the control unit 80 can control the flow rate of the processing liquid from the processing liquid supply unit 10 through the pipe 30 and passing through the positively or negatively charged filter unit 50 based on the state of charge of the substrate W. This allows for active control of the charge amount of the processing liquid flowing to the nozzle unit 20, and thus, the processing liquid with the controlled charge amount can be discharged to the substrate W through the nozzle unit 20. Therefore, the state of charge of the substrate W can be effectively adjusted, thereby removing static electricity from the substrate W to prevent electrostatic discharge (ESD) when the substrate W and the processing liquid come into contact with each other, and also effectively preventing defects in the substrate W caused by electric arcs or the like. Furthermore, the state of charge of the substrate can be effectively controlled, thereby controlling the substrate W to have a state of charge suitable for the next process. As an example, in the application of photolithography, when photoresist is discharged onto a substrate W with a thinner layer of negative charge, the control unit 80 can control the flow rate of photoresist passing through the filter unit 50 according to the charge state of the negatively charged substrate W, thereby controlling the photoresist to be positively charged, and the positively charged photoresist can be discharged onto the substrate W through the nozzle unit 20 to neutralize the substrate W.

[0045] As another example, in the development operation of the photolithography process, when a material that is easily charged with a positive charge is stacked on the bottom layer of the surface to be developed on the substrate W, the control unit 80 can control the flow rate of the developer passing through the filter unit 50 through the control valve 60 to make the developer carry a negative charge, so that the negatively charged developer can be discharged to the substrate W to be neutralized, and thus, the material on the bottom layer of the substrate W can be effectively prevented from carrying a positive charge during the development process.

[0046] For example, filter unit 50 may include at least two filters with different charges. Figure 1 As shown, the filter unit 50 may include a positively charged first filter 51 and a negatively charged second filter 52. Although the first filter 51 and the second filter 52 are shown as being connected in parallel with each other, the exemplary embodiment is not limited thereto, and the first filter 51 and the second filter 52 may be connected in series with each other.

[0047] Figure 2 This is a schematic diagram of a filter unit installed in a substrate processing apparatus according to an exemplary embodiment. Figure 3 This is a schematic cross-sectional view of a filter unit disposed in a substrate processing apparatus according to an exemplary embodiment, and Figure 4 It is an application Figure 3 A schematic diagram of a substrate processing device for a filter unit.

[0048] refer to Figure 2 and Figure 3In the case of the positively charged first filter 51 in the filter unit 50, when the processing liquid passes through the first filter 51, the positive charge is repelled due to the charge repulsion with the positively charged first filter 51, making it difficult for the positive charge to pass through the first filter 51. At the same time, due to the charge attraction with the first filter 51, the negative charge in the processing liquid can easily pass through the first filter 51. Therefore, the processing liquid that passes through the first filter 51 can be completely negatively charged and can be discharged to the substrate W through the nozzle unit 20.

[0049] Similarly, in the case of the negatively charged second filter 52 in the filter unit 50, when the processing liquid passes through the second filter 52, the negative charges in the processing liquid are repelled due to the charge repulsion of the negatively charged second filter 52, making it difficult for them to pass through the second filter 52. At the same time, due to the charge attraction of the second filter 52, the positive charges in the processing liquid can easily pass through the second filter 52. Therefore, the processing liquid that passes through the second filter 52 can be completely positively charged and can be discharged to the substrate W through the nozzle unit 20.

[0050] The first filter 51 may include a positively charged porous membrane, and the second filter 52 may include a negatively charged porous membrane.

[0051] As an example, such as Figure 2 and Figure 3 As shown, each of the first filter 51 and the second filter 52 may include a body 50a and a plurality of through holes 50b. The body 50a includes a porous membrane with a positive or negative charge, and the through holes 50b are formed to penetrate from one side surface upstream of the body 50a to another side surface downstream of it in the direction of fluid flow. The fluid can be made to flow smoothly through the plurality of through holes 50b. Figure 3 As shown, the through hole 50b can be formed to have the same diameter.

[0052] exist Figure 3 In this embodiment, the pipes 30 connected to the filter unit 50 are configured to have the same diameter, but the exemplary embodiment is not limited to this. In order to allow the treatment liquid to pass through the filter unit easily and flow smoothly, the pipes provided with the filter unit can be implemented in the form of expansion pipes whose diameter gradually increases in the direction of the treatment liquid flow.

[0053] When the filtration unit 50 includes a first filter 51 and a second filter 52, the first filter 51 and the second filter 52 can be connected in parallel to each other to control the flow rate of the processed liquid passing through the first filter 51 and the second filter 52. In the following text, reference will be made to... Figure 4 A method for controlling the flow rate of a treatment liquid passing through a filtration unit 50 including a first filter 51 and a second filter 52 is described.

[0054] For example, refer to Figure 4 The pipe 30 may include a first branch pipe 31 and a second branch pipe 32 connected in parallel. A first filter 51 of the filter unit 50 may be disposed on the first branch pipe 31, and a second filter 52 may be disposed on the second branch pipe 32. In this case, a control valve 60 may be disposed at the point where the first branch pipe 31 and the second branch pipe 32 converge and connected to the control unit 80 to control the total flow rate of the processed liquid passing through each of the first filter 51 and the second filter 52 simultaneously through the first branch pipe 31 and the second branch pipe 32. For example, when the processed liquid supplied to the nozzle unit 20 should be positively charged, the control valve 60 may be controlled such that the flow rate of the processed liquid passing through the first filter 51 (which is in a positively charged state) and becoming negatively charged when passing through the first branch pipe 31 is lower than the flow rate of the processed liquid passing through the second filter 52 (which is in a negatively charged state) and becoming positively charged when passing through the second branch pipe 32.

[0055] As an example, the control unit 80 can control the control valve 60 to supply a processing liquid with a polarity opposite to that of the substrate W to the substrate W. When the surface of the substrate W to be processed is positively charged, the flow rate of the processing liquid passing through the first filter 51 and the second filter 52 can be controlled so that the processing liquid can eventually be discharged to the substrate in a negatively charged state. Therefore, the processing liquid can neutralize the substrate W, thereby removing static electricity from the substrate W. In addition, particles on the substrate W can be captured and removed.

[0056] A substrate processing apparatus according to an exemplary embodiment may include a detection unit 90 for detecting the state of charge of a substrate W. A control unit 80 may be configured to receive a detection signal relating to the state of charge of the substrate W from the detection unit 90, and thus may control a control valve 60 based on the detection signal to control the amount of charge in the processing liquid. The detection unit 90 may be implemented in various forms. As an example, an electrostatic measuring device may be used as the detection unit 90. For example, an electric field measuring device capable of measuring an electric field in a non-contact state with the substrate W may be used to detect the electric field generated by the surface of the substrate W. The detection signal detected by the detection unit 90 may be transmitted to the control unit 80 so that the control unit 80 may control the control valve 60 to control the amount of charge in the processing liquid passing through the filter unit 50.

[0057] The detection unit 90 can be positioned at different locations within the processing space. For example... Figure 4As shown, the detection unit 90 can be supported by a detection unit support arm 91 configured to be separate from the nozzle arm 22 of the nozzle unit 20, and can be disposed on the upper side of the substrate W to detect the state of charge of the substrate W. Furthermore, the detection unit support arm 91 can movably support the detection unit 90, allowing the detection unit 90 to be moved to different positions within the processing space to detect the state of charge of the substrate W at different positions.

[0058] In this embodiment, an electric field measuring device has been described as being used as the detection unit 90. However, the detection unit is not limited to this and can be implemented in various forms such as an ion detector, as long as it can detect the charge state of the substrate.

[0059] In the substrate processing apparatus according to the first embodiment, the control unit 80 can control the flow rate of the processing liquid passing through the positively charged first filter 51 and the flow rate of the processing liquid passing through the negatively charged second filter 52 based on a detection signal related to the state of charge of the substrate detected by the detection unit 90. Therefore, the control unit 80 can actively control the amount of charge of the processing liquid that finally merges after passing through the first filter 51 and the second filter 52, and the processing liquid is discharged to the substrate W through the nozzle unit 20, thereby effectively adjusting the state of charge of the substrate W, thereby removing the static electricity carried by the substrate W, preventing ESD phenomena when the substrate W and the processing liquid come into contact with each other, and also effectively preventing defects in the substrate W caused by electric arcs or the like.

[0060] In particular, the substrate processing apparatus according to the first embodiment can easily control the charge of the processing liquid with a simple structure via a charge control unit 40 including a filter unit 50 and a control valve 60. Furthermore, the flow rate of the processing liquid passing through a positively charged first filter 51 and a negatively charged second filter 52 connected in parallel with the first filter 51 can be easily controlled via the control valve 60. The charge control unit 40, including the filter unit 50 containing the first filter 51 and the second filter 52 and the control valve 60, can be installed in a pipe 30 disposed inside the nozzle arm 22, thereby serving as a structure integrated with the nozzle unit 20, achieving a simplified structure and reducing manufacturing costs.

[0061] First variant of the first embodiment

[0062] Figure 5 This is a schematic cross-sectional view of another filter unit disposed in a substrate processing apparatus according to an exemplary embodiment.

[0063] Reference Figure 5This describes a substrate processing apparatus according to a first variant of the first embodiment. In the first variant, the components other than the filter unit 450 may be the same as those in the first embodiment, and their description will be omitted to avoid redundancy.

[0064] refer to Figure 5 The first and second filters of the filtration unit 450 may each include a body 450a and a plurality of through holes 450b. The body 450a includes a porous membrane carrying a positive or negative charge, and the through holes 450b are formed to penetrate from one side surface upstream of the body 450a to another side surface downstream of the body 450a in the direction of fluid flow. The through holes 450b of the first or second filter of the filtration unit 450 may be configured to have a tapered shape, wherein the diameter of the holes gradually increases from one side surface upstream of the body 450a to another side surface downstream of the body 450a. The fluid can be made to flow smoothly through the plurality of through holes 450b. However, the filtration unit 450 according to the exemplary embodiment is not limited to this form and can be implemented in various forms as long as it can carry a specific charge while ensuring smooth flow of the fluid.

[0065] Second variant of the first embodiment

[0066] Figure 6 This is a schematic diagram of a substrate processing apparatus according to an exemplary embodiment, which applies a filter unit having a different structure.

[0067] Reference Figure 6 A substrate processing apparatus according to a second variant of the first embodiment is described. In the second variant embodiment, the components other than the filter unit 350 may be the same as those in the first embodiment, and their description will be omitted to avoid redundancy.

[0068] In a second variant of the first embodiment, reference is made to Figure 6 The filter unit 350 may have a structure in which a porous membrane 350b coated with negatively or positively charged polymeric monomers is fixed in the filter housing 350a. For example, when the filter unit 350 includes a positively charged first filter 351 and a negatively charged second filter 352, the first filter 351 may have a structure in which a porous membrane 350b coated with positively charged polymeric monomers is fixed, and the second filter 352 may have a structure in which a porous membrane 350b coated with negatively charged polymeric monomers is fixed. It should be understood that the positively or negatively charged polymeric monomers are not used to react with the treatment liquid, but rather to allow ions with a polarity opposite to that of the polymeric monomers to pass through the treatment liquid and to prevent ions with the same polarity as the polymeric monomers from passing through without reacting with the treatment liquid.

[0069] The method for controlling the flow rate of the treatment fluid passing through the first filter 351 and the second filter 352 is the same as the method for controlling the flow rate of the treatment fluid passing through the first filter 51 and the second filter 52 according to the first embodiment, and therefore will be omitted herein.

[0070] Third variant of the first embodiment

[0071] Figure 7 This is a schematic diagram of a substrate processing apparatus including a voltage difference measurement unit according to a third variant of the first embodiment.

[0072] Reference Figure 7 This describes a substrate processing apparatus according to a third variant of the first embodiment. In the third variant, the components, except for the voltage difference measurement unit, may be the same as those in the first embodiment, and their description will be omitted to avoid redundancy.

[0073] The substrate processing apparatus according to the third variant of the first embodiment may further include a voltage difference measurement unit.

[0074] like Figure 7 As shown, the voltage difference measuring unit can be connected upstream and downstream of the filter unit 50 in the direction in which the processed liquid is supplied, and can measure the voltage difference of the processed liquid passing through the upstream and downstream of the filter unit 50. For example, the voltage difference measuring unit can be connected upstream of the branch point 33 (the point where the first branch pipe 31 and the second branch pipe 32 branch) and downstream of the confluence point 34 (the point where the first branch pipe 31 and the second branch pipe 32 converge) of the pipe 30 provided with the first filter 51 and the second filter 52 in the direction in which the processed liquid is supplied, and can measure the voltage difference of the processed liquid passing through the upstream of the branch point 33 and downstream of the confluence point 34 of the pipe 30 provided with the first filter 51 and the second filter 52. In this case, the control unit 80 can be configured to control the control valve 60 taking into account the measurement results of the voltage difference measuring unit. Therefore, the control unit 80 can obtain feedback on the voltage difference of the processed liquid before and after passing through the filter unit 50, so as to more accurately control the amount of charge of the processed liquid discharged to the substrate W according to the state of charge of the substrate W.

[0075] Fourth variant of the first embodiment

[0076] Figure 8 This is a schematic diagram of a substrate processing apparatus including a voltage difference measurement unit according to a fourth variant of the first embodiment.

[0077] Reference Figure 8This describes a substrate processing apparatus according to a fourth variant of the first embodiment. In the fourth variant, the components other than the voltage difference measurement unit may be the same as those in the first embodiment, and their description will be omitted to avoid redundancy.

[0078] The substrate processing apparatus according to the fourth variant of the first embodiment may further include a voltage difference measurement unit.

[0079] As another example, such as Figure 8 As shown, the voltage difference measuring unit can be connected to the pipe 35 connected to the outlet portion of the processing liquid supply unit 10 and downstream of the filter unit 50 in the direction in which the processing liquid is supplied, and can measure the voltage difference of the processing liquid passing through the pipe 35 connected to the outlet portion of the processing liquid supply unit 10 and downstream of the filter unit 50. For example, the voltage difference measuring unit can be connected to the confluence point 34 (the point where the first branch pipe 31 and the second branch pipe 32 meet) of the pipe 35 connected to the outlet portion of the processing liquid supply unit 10 and the pipe 30 provided with the first filter 51 and the second filter 52 in the direction in which the processing liquid is supplied, and can measure the voltage difference of the processing liquid passing downstream of the confluence point 34 of the pipe 35 connected to the outlet portion of the processing liquid supply unit 10 and the pipe 30 provided with the first filter 51 and the second filter 52. In this case, the control unit 80 can be configured to control the control valve 60 taking into account the measurement results of the voltage difference measuring unit.

[0080] The substrate processing apparatus according to the first embodiment of the first embodiment and the first to fourth variant embodiments of the first embodiment has been described as having a structure with a first filter and a second filter arranged in parallel and pre-charged with positive charges, and a charge control unit including a control valve. However, the exemplary embodiments are not limited thereto, and the substrate processing apparatus can be implemented in various forms. Hereinafter, a substrate processing apparatus according to the second embodiment will be described.

[0081] Second Implementation Method

[0082] Second Embodiment

[0083] Figure 9 This is a diagram illustrating an example of a substrate processing apparatus according to a second embodiment, which includes a charge control unit comprising a power supply unit.

[0084] Reference Figure 9 The substrate processing apparatus according to the second embodiment is described. Components other than the charge quantity control unit 140 and the detection unit 190 may be the same as those in the first embodiment, and their description will be omitted to avoid redundancy.

[0085] refer to Figure 9According to this embodiment, the charge control unit 140 can be implemented to provide a power supply unit 170, which supplies voltage to the filter unit 150 to apply a voltage corresponding to the charge state of the substrate W, so that the substrate W carries a positive charge or a negative charge.

[0086] The filter unit 150 may include at least one filter, and the power supply unit 170 may be configured as a single power supply unit or configured to correspond to the number of filters as needed.

[0087] Reference Figure 9 The second embodiment is described as an example of a charge control unit 140, which includes: a filter unit 150 comprising a first filter 151 and a second filter 152 arranged in parallel and respectively carrying positive and negative charges; a control valve 60 for controlling the flow rate of the processing liquid passing through the first filter 151 and the second filter 152; and a power supply unit 170 comprising a first power supply unit 171 for applying voltage to the first filter 151 and a second power supply unit 172 for applying voltage to the second filter 152.

[0088] refer to Figure 9 The charge control unit 140 of the substrate processing apparatus may further include a first power supply unit 171 connected to the control unit 180 and applying a positive charge to the first filter 151, and a second power supply unit 172 connected to the control unit 180 and applying a negative charge to the second filter 152. The control unit 180 can control the operation of the first power supply unit 171 and the second power supply unit 172 according to the state of charge of the substrate W. The first power supply unit 171 and the second power supply unit 172 can apply a fixed voltage with a constant level to the filtering unit 150. In this case, the first filter 151 and the second filter 152 can be as follows: Figure 1 The filters shown are arranged in parallel, and the flow rate of the treatment fluid passing through the positively charged first filter 151 and the negatively charged second filter 152 is controlled by control valve 60 in the same manner as described in the first embodiment, and thus the amount of charge in the treatment fluid can be controlled. A detailed description thereof will be omitted to avoid redundancy.

[0089] The substrate processing apparatus may further include a detection unit 190 for detecting the state of charge of the substrate W. The control unit 180 may be configured to control the amount of charge in the processing liquid by receiving a detection signal related to the state of charge of the substrate W from the detection unit 190 and controlling the control valve 60 based on the detection signal. The detection unit 190 may be implemented in various forms. As an example, an electrostatic measuring device may be used as the detection unit 190. For example, an electric field measuring device capable of measuring the electric field in a non-contact state with the substrate W may be used to detect the electric field generated by the surface of the substrate W. The detection signal detected by the detection unit 190 may be transmitted to the control unit 180 so that the control unit 180 can control the control valve 60 to control the amount of charge in the processing liquid passing through the filter unit 150.

[0090] The detection unit 190 can be positioned at different locations within the processing space. For example... Figure 9 As shown, the detection unit 190 can be mounted on the nozzle arm 22 to which the nozzle tip 21 is connected, so as to move integrally with the nozzle arm 22.

[0091] The substrate processing apparatus according to the second embodiment may include the same voltage difference measurement unit as described in the third variant embodiment or the fourth variant embodiment of the first embodiment, which will be briefly described below.

[0092] Similar to the third variant embodiment of the first embodiment of the first implementation, as referenced. Figure 7 The voltage difference measuring unit shown is connected upstream of the branch point 33 (the point where the first branch pipe 31 and the second branch pipe 32 branch) of the pipe 30 equipped with the first filter 151 and the second filter 152, and downstream of the confluence point 34 (the point where the first branch pipe 31 and the second branch pipe 32 converge) of the pipe 30 equipped with the first filter 151 and the second filter 152, in the direction in which the processed liquid is supplied. It can measure the voltage difference of the processed liquid passing through the branch point 33 upstream of the pipe 30 equipped with the first filter 151 and the second filter 152 and downstream of the confluence point 34. In this case, the control unit 180 can be configured to control the control valve 60, the first power supply unit 171, and the second power supply unit 172, taking into account the measurement results of the voltage difference measuring unit. Therefore, the control unit 180 can obtain feedback on the voltage difference of the processed liquid before and after passing through the filter unit 150, so as to more accurately control the amount of charge of the processed liquid discharged to the substrate W according to the state of charge of the substrate W.

[0093] Furthermore, similar to the fourth variant embodiment of the first embodiment of the first implementation, as referenced... Figure 8The voltage difference measuring unit shown is located downstream of the confluence point 34 (the point where the first branch pipe 31 and the second branch pipe 32 meet) of the pipe 35 connected to the outlet portion of the processing liquid supply unit 10 and the pipe 30 equipped with the first filter 151 and the second filter 152, in the direction in which the processing liquid is supplied. It can measure the voltage difference of the processing liquid passing downstream of the confluence point 34 of the pipe 35 connected to the outlet portion of the processing liquid supply unit 10 and the pipe 30 equipped with the first filter 151 and the second filter 152. In this case, the control unit 180 can be configured to control the control valve 60, the first power supply unit 171, and the second power supply unit 172, taking into account the measurement results of the voltage difference measuring unit.

[0094] In the substrate processing apparatus according to the second embodiment, the control unit 180 can control the first power supply unit 171, the second power supply unit 172, and the control valve 60 based on a detection signal related to the state of charge of the substrate W detected by the detection unit 90. This controls the flow rate of the processing liquid passing through the first filter 151 (positively charged) from the processing liquid supply unit 10 via the pipe 30 and passing through the first power supply unit 171, and the flow rate of the processing liquid passing through the second filter 152 (negatively charged) via the second power supply unit 172. Therefore, the control unit 180 can actively control the amount of charge in the processing liquid that finally converges after passing through the first filter 51 and the second filter 52, and the processing liquid is discharged to the substrate W through the nozzle unit 20, thereby effectively adjusting the state of charge of the substrate W. This removes static electricity from the substrate W, preventing ESD phenomena when the substrate W and the processing liquid come into contact with each other, and also effectively preventing defects in the substrate W caused by electric arcs or the like.

[0095] In the second embodiment, the control unit 180 has been described as a control method that applies a fixed voltage to the first filter 151 and the second filter 152 using the first power supply unit 171 and the second power supply unit 172, but the exemplary implementation is not limited thereto. As a variant of the second embodiment, the control unit can control the first power supply unit and the second power supply unit to change the input voltage in real time according to the state of charge of the substrate, and apply the changed voltage to the first filter and the second filter.

[0096] Furthermore, while the second embodiment has described a parallel arrangement of the first filter 151 and the second filter 152, as a variant of the second embodiment, the first filter and the second filter can be connected in series. In this case, a bypass pipe can be provided to allow the treatment fluid to selectively pass through the first filter and the second filter.

[0097] Third Embodiment

[0098] Figure 10 This is a diagram illustrating an example of a substrate processing apparatus according to a third embodiment, which includes a filter unit comprising a single third filter and a charge control unit comprising a single power supply unit.

[0099] Reference Figure 10 The substrate processing apparatus according to the third embodiment is described. Components other than the charge quantity control unit 240 may be the same as those in the second embodiment, and their description will be omitted to avoid redundancy.

[0100] refer to Figure 10 According to this embodiment, the charge control unit 240 may include a filter unit 250 containing a single third filter 251 and a power supply unit 270 supplying voltage to the third filter 251 to apply a voltage corresponding to the charge state of the substrate W to the substrate W, so that the substrate W carries a positive charge or a negative charge.

[0101] In the third embodiment, the control unit 280 can be configured to control the state of charge of the filter unit 250 according to the state of charge of the substrate W. For example, the control unit 280 can be implemented by controlling the voltage applied to the third filter 251 to selectively charge the third filter 251 with positive or negative charge according to the state of charge of the substrate W. For example, the control unit 280 can control the power supply unit 270 to change the input voltage in real time according to the state of charge of the substrate W and apply the changed voltage to the third filter 251.

[0102] In the substrate processing apparatus according to the third embodiment, the control unit 280 can control the power supply unit 270 based on a detection signal related to the state of charge of the substrate W detected by the detection unit 90, so as to actively control the amount of charge of the processing liquid passing through the charged (e.g., negatively charged) third filter 251 in accordance with the state of charge of the substrate W. Therefore, the processing liquid can be discharged to the substrate W through the nozzle unit 20 to effectively adjust the state of charge of the substrate W, thereby removing the static electricity carried by the substrate W, preventing ESD phenomena when the substrate W and the processing liquid come into contact with each other, and also effectively preventing defects in the substrate W caused by electric arcs or the like.

[0103] It should be described that, in the second embodiment, in the second and third embodiments where power supply units 170 and 270 are provided, filter units 150 and 250 use a structure in which conductive layers are formed to be electrically connected to power supply units 170 and 270 to carry positive or negative charges. In this case, the shape or structure of filter units 150 and 250 is not limited and can be implemented in various forms, as long as filter units 150 and 250 can be provided with conductive layers to carry positive or negative charges through power supply units 170 and 270.

[0104] In addition, in reference Figures 1 to 10 In the first and second embodiments, the filter units 50, 150 and 250 of the charge control units 40, 140 and 240 are shown and described as being disposed in the pipe 30 inside the nozzle arm 22. However, the exemplary embodiments are not limited thereto, and the filter units of the charge control units may be disposed in the pipe outside the nozzle arm.

[0105] Exemplary embodiments also provide a substrate processing method.

[0106] Figure 11 This is a flowchart illustrating a substrate processing method according to an exemplary embodiment.

[0107] refer to Figure 11 The substrate processing method according to an exemplary embodiment may include a detection operation S1, a control operation S2, and a discharge operation S3. For example, in the detection operation S1, the state of charge of the substrate may be detected; in the control operation S2, the amount of charge of the processing liquid passing through the filter unit, which carries a positive or negative charge according to the state of charge of the substrate, may be controlled; and in the discharge operation S3, the processing liquid having the controlled amount of charge may be discharged.

[0108] Furthermore, in the control operation S2 of the substrate processing method according to the exemplary embodiment, a processing liquid having a polarity opposite to that of the substrate can be supplied to the substrate.

[0109] In the following description, the operation of processing a substrate using a substrate processing apparatus and substrate processing method according to an exemplary embodiment will be described with reference to the accompanying drawings.

[0110] In the substrate processing apparatus, the detection unit 90 or 190 can detect the state of charge of the substrate W in the detection operation S1. The detection signal related to the state of charge of the substrate W detected in the detection operation S1 can be transmitted to the control unit 80, 180 or 280. The control unit 80, 180 or 280 can control the amount of charge of the processing liquid passing through the filter unit 50, 150 or 250 based on the detection signal in the control operation S2. The processing liquid with the controlled amount of charge can be discharged to the substrate W in the discharge operation S3.

[0111] Based on reference Figure 1In the case of the substrate processing apparatus described in the first embodiment, where the charge control unit 40 includes a filter unit 50 comprising a positively charged first filter 51 and a negatively charged second filter 52 arranged in parallel with the first filter 51, the control unit 80 can transmit a control signal for controlling the flow rate of the processing liquid passing through the first filter 51 and the second filter 52 to the control valve 60. This ultimately controls the charge amount of the processing liquid that converges after passing through the first filter 51 and the second filter 52, and the processing liquid can then be discharged to the substrate W through the nozzle unit 20, thus adjusting the charge state of the substrate W. As a detailed example, when the substrate W is in a positively charged state, the processing liquid that converges after passing through the first filter 51 and the second filter 52 can be controlled by the control unit 80 to enter a negatively charged state, and the processing liquid can be discharged to the substrate W through the nozzle unit 20. Therefore, the negative charge can neutralize the positive charge of the substrate W, thereby neutralizing the substrate W. Thus, ESD phenomena can be prevented when the substrate W and the processing liquid come into contact with each other.

[0112] In addition, according to the reference Figure 9 In the case of the substrate processing apparatus described in the second embodiment, where the charge control unit 140 includes a first power supply unit 171 and a second power supply unit 172 arranged in parallel, and a first filter 151 to which a positive charge is applied and a second filter 152 to which a negative charge is applied, the control unit 180 can transmit a control signal for controlling the amount of charge of the processing liquid passing through the first filter 151 and the second filter 152 based on a detection signal related to the state of charge of the substrate W to the first power supply unit 171, the second power supply unit 172, and the control valve 60, so as to operate the first power supply unit 171 and the second power supply unit 172 so that, in a state where a positive charge is applied to the first filter 151 and a negative charge is applied to the second filter 152, the amount of charge of the processing liquid converging after passing through the first filter 151 and the second filter 152 is ultimately controlled by the control valve 60. Therefore, the state of charge of the substrate W can be adjusted.

[0113] In addition, according to the reference Figure 10In the case of the substrate processing apparatus of the third embodiment described, in which the charge control unit 240 includes a power supply unit 270 and a filter unit 250, and the filter unit 250 includes a third filter 251 to which positive or negative charge is selectively applied by the power supply unit 270, the control unit 280 can transmit a control signal for controlling the third filter 251 based on a detection signal related to the state of charge of the substrate W to the power supply unit 270, so as to operate the power supply unit 270 to adjust the charge of the processing liquid passing through the third filter 251 when the third filter 251 is subjected to positive or negative charge, and then discharge the processing liquid to the substrate W through the nozzle unit 20. Therefore, the state of charge of the substrate W can be adjusted.

[0114] As a result, according to the substrate processing equipment and method described above, the control unit can actively control the amount of charge of the processing liquid flowing from the processing liquid supply unit through a pipe and passing through a filter unit carrying positive or negative charges, based on the state of charge of the substrate. This allows the processing liquid with the controlled amount of charge to be discharged to the substrate through the nozzle unit, effectively adjusting the state of charge of the substrate. Therefore, static electricity on the substrate can be removed to prevent ESD phenomena when the substrate and processing liquid come into contact with each other, and defects on the substrate caused by electric arcs or other reasons can also be effectively prevented.

[0115] As described above, in the substrate processing apparatus according to the exemplary embodiment, the control unit can actively control the amount of charge of the processing liquid passing through a positively or negatively charged filter unit via a pipe from the processing liquid supply unit, so that the processing liquid with the controlled amount of charge can be discharged to the substrate through the nozzle unit, thereby effectively adjusting the charge state of the substrate. Therefore, static electricity on the substrate can be removed to prevent ESD phenomena when the substrate and processing liquid come into contact with each other, and defects on the substrate caused by electric arcs, etc., can also be effectively prevented.

[0116] On the other hand, in the substrate processing method according to the exemplary embodiment, the amount of charge of the processing liquid passing through the filter unit, which carries a positive or negative charge depending on the charge state of the substrate, can be actively controlled, and the processing liquid can be discharged to the substrate, thereby effectively adjusting the charge state of the substrate. Therefore, static electricity on the substrate can be removed to prevent ESD phenomena from occurring when the substrate and the processing liquid come into contact with each other, and defects on the substrate caused by electric arcs or the like can also be effectively prevented.

[0117] While exemplary embodiments have been shown and described above, it will be apparent to those skilled in the art that modifications and alterations can be made without departing from the scope of the invention as defined by the appended claims.

Claims

1. A substrate processing apparatus, comprising: The nozzle unit is configured to discharge the processing liquid onto the substrate; A pipe is connected to the nozzle unit and the treatment fluid supply unit that supplies the treatment fluid; A charge control unit, disposed at the pipeline, includes a filter unit carrying a positive or negative charge, and includes a control valve that controls the flow rate of the treatment liquid passing through the interior of the filter unit; as well as The control unit is connected to the charge control unit. The filtering unit includes at least two filters with different charges. The pipeline includes a first branch pipeline and a second branch pipeline connected in parallel, and The filtration unit includes a first filter and a second filter. The first filter is disposed at the first branch pipe and carries a positive charge, while the second filter is disposed at the second branch pipe and carries a negative charge. The charge control unit includes a control valve located at the junction of the first branch pipe and the second branch pipe and connected to the control unit to control the flow rate of the treatment fluid passing through the first branch pipe and the second branch pipe.

2. The substrate processing apparatus according to claim 1, wherein, The first filter includes a positively charged porous membrane, and the second filter includes a negatively charged porous membrane.

3. The substrate processing apparatus according to claim 1, wherein, The charge control unit further includes a power supply unit connected to the control unit and configured to apply voltage to at least one of the first and second filters to control the charge of the treatment liquid.

4. The substrate processing apparatus according to claim 3, wherein, The power supply unit includes a first power supply unit and a second power supply unit, wherein the first power supply unit is configured to apply a positive charge to the first filter and the second power supply unit is configured to apply a negative charge to the second filter.

5. The substrate processing apparatus according to claim 3, wherein, The power supply unit applies a voltage to the first filter and the second filter that corresponds to the state of charge of the substrate.

6. The substrate processing apparatus according to claim 1, wherein, The nozzle unit includes a nozzle tip and a nozzle arm, the nozzle tip being configured to spray the processing liquid onto the substrate, the nozzle arm having an end to which the nozzle tip is connected, and the filter unit being mounted on the nozzle arm.

7. The substrate processing apparatus according to claim 1, further comprising: A voltage difference measuring unit is connected upstream and downstream of the filter unit in the direction in which the treated liquid is supplied, and is configured to measure the voltage difference of the treated liquid passing through the upstream and downstream of the filter unit. The control unit is configured to control the charge control unit by taking into account the measurement results of the voltage difference measurement unit.

8. The substrate processing apparatus according to claim 1, comprising: A voltage difference measuring unit is connected to a pipe connected to the outlet portion of the treatment liquid supply unit and downstream of the filtration unit in the direction in which the treatment liquid is supplied, and is configured to measure the voltage difference of the treatment liquid passing through the pipe connected to the outlet portion of the treatment liquid supply unit and downstream of the filtration unit. The control unit is configured to control the charge control unit by taking into account the measurement results of the voltage difference measurement unit.

9. The substrate processing apparatus according to claim 1, further comprising: The detection unit is configured to detect the state of charge of the substrate. The control unit is connected to the detection unit and receives a detection signal from the detection unit related to the state of charge of the substrate, so as to control the charge control unit based on the detection signal.

10. The substrate processing apparatus according to claim 9, wherein, The detection unit is an electric field measuring device.

11. The substrate processing apparatus according to claim 9, wherein, The detection unit is mounted on the nozzle arm of the nozzle unit.

12. A substrate processing apparatus, comprising: A processing container that provides space for processing substrates; A substrate support member is disposed inside the processing container to support the substrate; A nozzle unit includes a nozzle tip, a nozzle arm, and a nozzle arm support member, the nozzle tip being used to discharge a processing liquid onto the substrate, the nozzle arm having an end to which the nozzle tip is connected, and the nozzle arm support member being configured to support the nozzle arm. A conduit having a portion disposed inside the nozzle arm and connected to the nozzle tip and a treatment fluid supply unit for supplying the treatment fluid; The charge control unit includes a first positively charged filter and a second negatively charged filter arranged in parallel, and a control valve disposed at the confluence point downstream of the pipe provided with the first filter and the second filter and configured to control the flow rate of the treatment liquid passing through the first filter and the second filter. The detection unit is configured to detect the state of charge of the substrate; as well as A control unit, connected to the control valve and the detection unit, controls the control valve based on the state of charge of the substrate detected by the detection unit.

13. The substrate processing apparatus according to claim 12, wherein, The charge control unit is mounted on the nozzle arm adjacent to the nozzle tip.

14. The substrate processing apparatus according to claim 12, wherein, The detection unit is mounted on the nozzle arm.

15. The substrate processing apparatus according to claim 12, wherein, The pipeline includes a first branch pipeline and a second branch pipeline connected in parallel. The first filter is installed at the first branch pipe, and the second filter is installed at the second branch pipe. The substrate processing apparatus further includes: a voltage difference measuring unit connected upstream of the branch point of the first branch pipe and the second branch pipe and downstream of the confluence point of the first branch pipe and the second branch pipe, and configured to measure the voltage difference of the processing liquid passing through the upstream of the branch point and the downstream of the confluence point, and The control unit is configured to control the control valve by taking into account the measurement results of the voltage difference measurement unit.

16. The substrate processing apparatus according to claim 12, further comprising: A voltage difference measuring unit is connected to a pipe connected to the outlet portion of the processing liquid supply unit and downstream of the confluence of the pipe provided with the first filter and the second filter, and is configured to measure the voltage difference of the processing liquid passing through the pipe connected to the outlet portion of the processing liquid supply unit and downstream of the confluence of the pipe provided with the first filter and the second filter. The control unit is configured to control the control valve by taking into account the measurement results of the voltage difference measurement unit.

17. A substrate processing method, comprising: The detection operation detects the state of charge of the substrate; Control operation, controlling the amount of charge of the processing liquid passing through the filter unit which is positively or negatively charged according to the detected state of charge of the substrate; as well as The discharge operation involves discharging a processing liquid having a controlled amount of the charge into the substrate. The filter unit is located at the pipe. The pipeline includes a first branch pipeline and a second branch pipeline connected in parallel, and The filtration unit includes a first filter and a second filter. The first filter is disposed at the first branch pipe and carries a positive charge, while the second filter is disposed at the second branch pipe and carries a negative charge. In the control operation, the flow rate of the treatment fluid passing through the first branch pipe and the second branch pipe is controlled by a control valve located at the point where the first branch pipe and the second branch pipe converge.

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