A semiconductor laser element having an interlayer coherent hole tunneling layer

Abstract

The present application relates to the technical field of semiconductor optoelectronic devices, and particularly relates to a semiconductor laser element with interlayer coherent hole tunneling layer, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, an upper confinement layer, and the active layer and the upper waveguide layer and / or the active layer and the lower waveguide layer have an interlayer coherent hole tunneling layer; the interlayer coherent hole tunneling layer constructs a high periodic electrostatic potential, tunes Feshbach molecular resonance to enhance the interaction of excitons and holes residing in different layers in the laser, thereby inducing the interlayer coherent hole tunneling injection of the active layer from the hole generation layer of the laser, improving the hole injection efficiency of the active layer, improving the matching degree and uniformity of the active layer electrons and holes, reducing the electron leakage, enhancing the carrier localization of the active layer, reducing the excitation threshold of the laser element, enhancing the confinement factor and peak gain, and improving the optical power and slope efficiency of the laser element.

Description

Technical Field

[0001] This invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor laser element having an interlayer coherent hole tunneling layer. Background Technology

[0002] Lasers are widely used in laser displays, laser TVs, laser projectors, communications, medical applications, weaponry, guidance, ranging, spectral analysis, cutting, precision welding, and high-density optical storage. There are many types of lasers, and they can be classified in various ways, mainly including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have advantages such as small size, high efficiency, light weight, good stability, long lifespan, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes (LEDs): 1) Lasers are generated by stimulated emission of charge carriers, resulting in a narrow spectral width at half maximum (FW / HM) and very high brightness; a single laser can achieve output power in the W range. In contrast, nitride LEDs are generated through spontaneous emission, with output power in the mW range. 2) Lasers operate at current densities of up to kA / cm², more than two orders of magnitude higher than nitride LEDs. This leads to stronger electron leakage, more severe Auger recombination, stronger polarization effects, and more severe electron-hole mismatch, resulting in a more severe drop effect and efficiency degradation. 3) The LED... The spontaneous transition radiation of a light-emitting diode (LED) is incoherent light that transitions from a high energy level to a low energy level without external influence. In contrast, a laser emits stimulated transition radiation, where the energy of the induced photon must be equal to the energy difference between the transitioning electron and the induced photon to produce coherent light. 4) The principles are different: LEDs emit light through radiative recombination when electrons and holes transition to quantum wells or pn junctions under external voltage. Lasers, on the other hand, require certain lasing conditions to be met. This requires the carriers in the active region to be reversed, and the stimulated emission light to oscillate back and forth in the resonant cavity. The propagation of the light in the gain medium amplifies the light, and the threshold condition must be met so that the gain is greater than the loss, ultimately resulting in the output of laser light.

[0004] Nitride semiconductor lasers have the following problems: 1) Large internal lattice mismatch and strain lead to strong polarization effects, and the strong Stark effect of quantum confinement in QCSE limits the improvement of laser electro-lasing gain; 2) High internal defect density and imperfect crystal quality result in low quantum well luminous efficiency, and high dislocation density reduces the laser's lifetime; 3) The Mg acceptor activation energy of p-type semiconductors is high and the ionization efficiency is low. The hole concentration is much lower than the electron concentration and the hole mobility is much lower than the electron mobility, resulting in severe electron-hole asymmetry mismatch in the quantum well, electron leakage and carrier delocalization, making hole transport in the quantum well more difficult, non-uniform carrier injection, non-uniform gain, broadening of the laser gain spectrum, and a decrease in peak gain. Summary of the Invention

[0005] The purpose of this invention is to provide a semiconductor laser device with an interlayer coherent hole tunneling layer. This interlayer coherent hole tunneling layer constructs a highly periodic electrostatic potential, tunes the Feshbach molecular resonance to enhance the interaction between excitons and holes residing in different layers of the laser, thereby inducing the generation of holes in the laser through interlayer coherent hole tunneling injection into the active layer, improving the hole injection efficiency of the active layer, improving the matching degree and uniformity of electrons and holes in the active layer, reducing electron leakage, enhancing the carrier localization of the active layer, lowering the excitation threshold of the laser device, enhancing the confinement factor and peak gain, and improving the optical power and slope efficiency of the laser device.

[0006] To achieve the above objectives, the present invention adopts the following technical solution: a semiconductor laser device having an interlayer coherent hole tunneling layer, structurally comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer. A first interlayer coherent hole tunneling layer is disposed between the lower waveguide layer and the active layer, and / or a second interlayer coherent hole tunneling layer is disposed between the active layer and the upper waveguide layer. The first interlayer coherent hole tunneling layer and the second interlayer coherent hole tunneling layer may be the same or different, and both are BaSrCuO, KAg3Se2, NiFeSe, CrGeTe3, or Na4Mn4Ti5O. 18 A specific structure formed by any two or more combinations of CrTe4, wherein the specific structure is any one or more combinations of heterojunction structure, superlattice structure, quantum well structure, core-shell structure, quantum dot structure, and two-dimensional moiré superlattice structure.

[0007] Further improvements to semiconductor laser devices with interlayer coherent hole tunneling layers:

[0008] Preferably, the thickness of the first interlayer coherent hole tunneling layer and the second interlayer coherent hole tunneling layer is 5-500 nm.

[0009] Preferably, the lower confining layer is any one or a combination of two or more of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50-5000 nm and a Si doping concentration of 1E18-1E20 cm⁻¹. -3 .

[0010] Preferably, the lower waveguide layer and the upper waveguide layer are any one or a combination of two or more of GaN, InGaN, and AlInGaN, with a thickness of 50-1000 nm and a Si doping concentration of 1E16-5E19 cm⁻¹. -3 .

[0011] Preferably, the electron blocking layer and the upper confinement layer are any one or a combination of two or more of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20-1000 nm and a Mg doping concentration of 1E18-1E20 cm⁻¹. -3 .

[0012] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, wherein the well layer is an InGaN well layer, and the barrier layer is any one or a combination of two or more of GaN, AlInGaN, AlGaN, and AlInN, and the number of periods of the active layer is m: 4 ≥ m ≥ 1.

[0013] Preferably, the substrate is sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, or sapphire.

[0014] Any one of the following: / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0015] Preferably, the lower confining layer is an AlGaN layer with a thickness of 50-5000 nm and a Si doping concentration of 1E18-1E20 cm⁻¹. -3 The upper confinement layer is an AlInGaN layer with a thickness of 50-5000 nm and a Si doping concentration of 1E18-1E20 cm⁻¹. -3 The lower waveguide layer is a GaN layer with a thickness of 50-1000 nm; the upper waveguide layer is an InGaN layer with a thickness of 50-1000 nm; the active layer is a periodic structure composed of a well layer and a barrier layer, the well layer is an InGaN well layer, and the number of periods m satisfies 4≥m≥1.

[0016] Preferably, the first interlayer coherent hole tunneling layer and the second interlayer coherent hole tunneling layer are specific structures formed by the following binary combinations: KV3Sb5 / WSe2, KV3Sb5 / ReO3, KV3Sb5 / RbV3Sb5, KV3Sb5 / CsV3Sb5, KV3Sb5 / KSbO3, WSe2 / ReO3, WSe2 / RbV3Sb5, WSe2 / CsV3Sb5, WSe2 / KSbO3, ReO3 / RbV3Sb5, ReO3 / CsV3Sb5, ReO3 / KSbO3, RbV3Sb5 / CsV3Sb5, RbV3Sb5 / KSbO3, CsV3Sb5 / KSbO3.

[0017] Preferably, the first interlayer coherent hole tunneling layer and the second interlayer coherent hole tunneling layer are specific structures formed by the following ternary combinations: KV3Sb5 / WSe2 / ReO3, KV3Sb5 / WSe2 / RbV3Sb5, KV3Sb5 / WSe2 / CsV3Sb5, KV3Sb5 / WSe2 / KSbO3, KV3Sb5 / ReO3 / RbV3Sb5, KV3Sb5 / ReO3 / CsV3Sb5, KV3Sb5 / ReO3 / KSbO3, KV3Sb5 / RbV3Sb5 / CsV3Sb5, KV3Sb5 / RbV3Sb5 / KS bO3, KV3Sb5 / CsV3Sb5 / KSbO3, WSe2 / ReO3 / RbV3Sb5, WSe2 / ReO3 / CsV3Sb5, WSe2 / ReO3 / KSbO3, WSe2 / RbV3Sb5 / CsV3Sb5, WSe2 / RbV3S b5 / KSbO3, WSe2 / CsV3Sb5 / KSbO3, ReO3 / RbV3Sb5 / CsV3Sb5, ReO3 / RbV3Sb5 / KSbO3, ReO3 / CsV3Sb5 / KSbO3, RbV3Sb5 / CsV3Sb5 / KSbO3.

[0018] Preferably, the first interlayer coherent hole tunneling layer and the second interlayer coherent hole tunneling layer are specific structures formed by the following quaternary combinations: KV3Sb5 / WSe2 / ReO3 / RbV3Sb5, KV3Sb5 / WSe2 / ReO3 / CsV3Sb5, KV3Sb5 / WSe2 / ReO3 / KSbO3, KV3Sb5 / ReO3 / RbV3Sb5 / CsV3Sb5, KV3Sb5 / ReO3 / RbV3Sb5 / KSbO3, KV3Sb5 / RbV3Sb5 / CsV3Sb5 / KSbO3, WSe2 / ReO3 / RbV3Sb5 / CsV3Sb5, WS e2 / ReO3 / RbV3Sb5 / KSbO3, WSe2 / RbV3Sb5 / CsV3Sb5 / KSbO3, ReO3 / RbV3Sb5 / CsV3Sb5 / KSbO3.

[0019] Preferably, the first interlayer coherent hole tunneling layer and the second interlayer coherent hole tunneling layer are specific structures formed by the following five-element or six-element combinations: KV3Sb5 / WSe2 / ReO3 / RbV3Sb5 / CsV3Sb5, KV3Sb5 / WSe2 / ReO3 / RbV3Sb5 / KSbO3, KV3Sb5 / WSe2 / ReO3 / CsV3Sb5 / KSbO3, KV3Sb5 / ReO3 / RbV3Sb5 / CsV3Sb5 / KSbO3, WSe2 / ReO3 / RbV3Sb5 / CsV3Sb5 / KSbO3, KV3Sb5 / WSe2 / ReO3 / RbV3Sb5 / CsV3Sb5 / KSbO3.

[0020] The advantages of this invention compared to the prior art are as follows:

[0021] 1) This invention provides a semiconductor laser device with an interlayer coherent hole tunneling layer. Structurally, from bottom to top, it includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer. An interlayer coherent hole tunneling layer is disposed between the lower waveguide layer and the active layer, or between the active layer and the upper waveguide layer. The interlayer coherent hole tunneling layer of this semiconductor laser device constructs a highly periodic electrostatic potential, tunes the Feshbach molecular resonance to enhance the interaction between excitons and holes residing in different layers of the laser, thereby inducing the generation of interlayer coherent hole tunneling injection into the active layer, improving the hole injection efficiency of the active layer, reducing the excitation threshold of the laser device, enhancing the confinement factor, and improving the optical power and slope efficiency of the laser device. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the structure of a semiconductor laser element having an interlayer coherent hole tunneling layer according to an embodiment of the present invention; Figure 2 This is a schematic diagram of the structure of a semiconductor laser element having an interlayer coherent hole tunneling layer according to an embodiment of the present invention; Figure 3 This is a schematic diagram of the structure of a semiconductor laser element having an interlayer coherent hole tunneling layer according to an embodiment of the present invention;

[0023] Reference numerals: 100, substrate; 101, lower confinement layer; 102, lower waveguide layer; 103, active layer; 104, upper waveguide layer; 105, electron blocking layer; 106, upper confinement layer; 1071, first interlayer coherent hole tunneling layer; 1072, second interlayer coherent hole tunneling layer. Detailed Implementation

[0024] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0025] Comparative Example 1

[0026] This comparative example provides a conventional laser element, which, from bottom to top, includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106; specifically:

[0027] The substrate 100 is a GaN substrate;

[0028] The lower confinement layer 101 is an AlGaN layer with a thickness of 100 nm and a Si doping concentration of 1E18 cm⁻¹. -3 ;

[0029] The lower waveguide layer 102 is a GaN layer with a thickness of 100 nm and a Si doping concentration of 1E17 cm⁻¹. -3 ;

[0030] The active layer 103 is a periodic structure composed of a well layer and a barrier layer. The well layer is an InGaN well layer, the barrier layer is GaN, and the number of periods m is 3.

[0031] The upper waveguide layer 104 is an InGaN layer with a thickness of 100 nm and a Si doping concentration of 1E16cm. -3 ;

[0032] The electron blocking layer 105 is an AlInGaN layer with a thickness of 30 nm and a Mg doping concentration of 1E18 cm⁻¹. -3 ;

[0033] The upper confinement layer 106 is an AlGaN layer with a thickness of 100 nm and a Mg doping concentration of 1E18 cm⁻¹. -3 .

[0034] Example 1

[0035] This embodiment provides a semiconductor laser element 1 with an interlayer coherent hole tunneling layer, the structure of which is as follows: Figure 1 As shown, the specific structure is the same as that in Comparative Example 1, except that a first interlayer coherent hole tunneling layer 1071 is provided between the lower waveguide layer 102 and the active layer 103.

[0036] The first interlayer coherent hole tunneling layer 1071 is a superlattice structure of BaSrCuO / NiFeSe binary combination with a thickness of 50nm.

[0037] Example 2

[0038] This embodiment provides a semiconductor laser element 2 with an interlayer coherent hole tunneling layer, the structure of which is as follows: Figure 1 As shown, the structure, from bottom to top, includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, a first interlayer coherent hole tunneling layer 1071, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106; specifically:

[0039] The substrate 100 is a GaN substrate;

[0040] The lower confinement layer 101 is a GaN / InGaN layer with a thickness of 50 nm and a Si doping concentration of 1E19 cm⁻¹. -3 ;

[0041] The lower waveguide layer 102 is an InGaN layer with a thickness of 50 nm and a Si doping concentration of 1E17cm. -3 ;

[0042] The first interlayer coherent hole tunneling layer 1071 is a heterojunction structure composed of BaSrCuO / KAg3Se2 / CrTe4 ternary combination, with a thickness of 100nm;

[0043] The active layer 103 is a periodic structure composed of a well layer and a barrier layer. The well layer is an InGaN well layer, and the barrier layer is an AlInGaN layer. The number of periods m satisfies that m is 1.

[0044] The upper waveguide layer 104 is an AlInGaN / InGaN layer with a thickness of 1000 nm and a Si doping concentration of 1E17 cm⁻¹. -3 ;

[0045] The electron blocking layer 105 is a combination of GaN and AlGaN, with a thickness of 20 nm and a Mg doping concentration of 1E18 cm⁻¹. -3 ;

[0046] The upper confinement layer 106 is a combination of AlInGaN and AlN, with a thickness of 20 nm and a Mg doping concentration of 1E19 cm⁻¹. -3 .

[0047] Example 3

[0048] This embodiment provides a semiconductor laser element 3 with an interlayer coherent hole tunneling layer, the structure of which is as follows: Figure 2 As shown, the structure, from bottom to top, includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, a second interlayer coherent hole tunneling layer 1072, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106; specifically:

[0049] The substrate 100 is a GaN substrate;

[0050] The lower confinement layer 101 is an InGaN layer with a thickness of 5000 nm and a Si doping concentration of 1E20 cm⁻¹. -3 ;

[0051] The lower waveguide layer 102 is a combination of InGaN and AlInGaN, with a thickness of 1000 nm and a Si doping concentration of 1E17 cm⁻¹. -3 ;

[0052] The active layer 103 is a periodic structure composed of a well layer and a barrier layer. The well layer is an InGaN well layer, and the barrier layer is a combination of AlGaN and AlInN. The number of periods m satisfies that m is 4.

[0053] The second interlayer coherent hole tunneling layer 1072 is a two-dimensional moiré superlattice structure of a pentagonal combination of KV3Sb5 / ReO3 / RbV3Sb5 / CsV3Sb5 / KSbO3.

[0054] The upper waveguide layer 104 is a combination of InGaN and AlInGaN, with a thickness of 50 nm and a Si doping concentration of 1E18 cm⁻¹. -3 ;

[0055] The electron blocking layer 105 is a combination of GaN, AlGaN, and AlInGaN, with a thickness of 1000 nm and a Mg doping concentration of 1E18 cm⁻¹. -3 ;

[0056] The upper confinement layer 106 is a combination of AlN and AlInN, with a thickness of 1000 nm and a Mg doping concentration of 1E19 cm⁻¹. -3 .

[0057] Example 4

[0058] This embodiment provides a semiconductor laser element 4 with an interlayer coherent hole tunneling layer, the structure of which is as follows: Figure 3 As shown, the structure, from bottom to top, includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, a first interlayer coherent hole tunneling layer 1071, an active layer 103, a second interlayer coherent hole tunneling layer 1072, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106; specifically:

[0059] The substrate 100 is a GaN substrate;

[0060] The lower confinement layer 101 is a combination of AlInGaN, AlN, and InN, with a thickness of 100 nm and a Si doping concentration of 1E19 cm⁻¹. -3 ;

[0061] The lower waveguide layer 102 is made of AlInGaN, with a thickness of 100 nm and a Si doping concentration of 1E17 cm⁻¹. -3 ;

[0062] The first interlayer coherent hole tunneling layer 1071 and the second interlayer coherent hole tunneling layer 1072 are the same, both being a core-shell structure of a five-element combination of KV3Sb5 / ReO3 / RbV3Sb5 / CsV3Sb5 / KSbO3.

[0063] The active layer 103 is a periodic structure composed of a well layer and a barrier layer. The well layer is an InGaN well layer, and the barrier layer is a combination of GaN, AlInGaN, and AlGaN. The number of periods m is 3.

[0064] The upper waveguide layer 104 is a combination of InGaN and AlInGaN, with a thickness of 100 nm and a Si doping concentration of 1E17 cm⁻¹. -3 ;

[0065] The electron blocking layer 105 is a combination of AlInGaN, AlN, and AlInN, with a thickness of 100 nm and a Mg doping concentration of 1E18 cm⁻¹. -3 ;

[0066] The upper confinement layer 106 is a combination of AlInGaN, AlN, and AlInN, with a thickness of 100 nm and a Mg doping concentration of 1E19 cm⁻¹. -3 .

[0067] Example 5

[0068] This embodiment provides a semiconductor laser element 5 with an interlayer coherent hole tunneling layer, the structure of which is as follows: Figure 3 As shown, the structure, from bottom to top, includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, a first interlayer coherent hole tunneling layer 1071, an active layer 103, a second interlayer coherent hole tunneling layer 1072, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106; specifically:

[0069] The substrate 100 is a GaN substrate;

[0070] The lower confinement layer 101 is a combination of InGaN and AlInN, with a thickness of 100 nm and a Si doping concentration of 1E19 cm⁻¹. -3 ;

[0071] The lower waveguide layer 102 is a combination of InGaN and AlInGaN, with a thickness of 100 nm and a Si doping concentration of 1E18 cm⁻¹. -3 ;

[0072] The first interlayer coherent hole tunneling layer 1071 is BaSrCuO / KAg3Se2 / NiFeSe / CrGeTe3 / Na4Mn4Ti5O 18 A pentagonal combination of quantum dot and heterojunction structures with a thickness of 100 nm;

[0073] The active layer 103 is a periodic structure composed of a well layer and a barrier layer. The well layer is an InGaN well layer, and the barrier layer is a combination of GaN and AlInN. The number of periods m is 3.

[0074] The second interlayer coherent hole tunneling layer 1072 is BaSrCuO / KAg3Se2 / NiFeSe / CrGeTe3 / Na4Mn4Ti5O 18 A quantum dot structure and heterojunction structure of CrTe4 hexa-component combination with a thickness of 100 nm;

[0075] The upper waveguide layer 104 is a combination of GaN and AlInGaN, with a thickness of 500 nm and a Si doping concentration of 1E17 cm⁻¹. -3 ;

[0076] The electron blocking layer 105 is a combination of GaN, AlN, and AlInN, with a thickness of 500 nm and a Mg doping concentration of 1E18 cm⁻¹. -3 ;

[0077] The upper confinement layer 106 is a combination of GaN, AlGaN, and AlN, with a thickness of 500 nm and a Mg doping concentration of 1E19 cm⁻¹. -3 ;

[0078] The performance of the semiconductor laser devices in the comparative examples above, and the semiconductor laser devices with interlayer coherent hole tunneling layers in Examples 1-5, was tested, and the results are shown in Table 1 below:

[0079] Table 1. Performance test data of semiconductor laser elements in comparative examples and Examples 1-5.

[0080]

[0081]

[0082] As shown in Table 1 above, compared with traditional laser elements, the semiconductor laser element with an interlayer coherent hole tunneling layer of this invention improves the oblique emission efficiency by more than 50%, the optical power by more than 30%, and the confinement factor by more than 30%. This is because the interlayer coherent hole tunneling layer of the semiconductor laser element of this invention constructs a highly periodic electrostatic potential, tunes the Feshbach molecular resonance to enhance the interaction between excitons and holes residing in different layers of the laser, thereby inducing the generation of interlayer coherent hole tunneling injection into the active layer, improving the hole injection efficiency of the active layer, improving the matching degree and uniformity of electrons and holes in the active layer, reducing electron leakage, enhancing the carrier localization of the active layer, lowering the excitation threshold of the laser element, enhancing the confinement factor and peak gain, and improving the optical power and oblique efficiency of the laser element.

[0083] Those skilled in the art should understand that the above descriptions are merely several specific embodiments of the present invention, and not all embodiments. It should be noted that many modifications and improvements can be made by those skilled in the art, and all modifications or improvements not exceeding the scope of the claims should be considered within the protection scope of the present invention.

Claims

1. A semiconductor laser device having an interlayer coherent hole tunneling layer, structurally comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), and an upper confinement layer (106), characterized in that, A first interlayer coherent hole tunneling layer (1071) is provided between the lower waveguide layer (102) and the active layer (103), and / or a second interlayer coherent hole tunneling layer (1072) is provided between the active layer (103) and the upper waveguide layer (104). The first interlayer coherent hole tunneling layer (1071) and the second interlayer coherent hole tunneling layer (1072) are the same or different, and both are BaSrCuO, KAg3Se2, NiFeSe, CrGeTe3, Na4Mn4Ti5O 18 A specific structure formed by any two or more combinations of CrTe4, wherein the specific structure is any one or more combinations of heterojunction structure, superlattice structure, quantum well structure, core-shell structure, quantum dot structure, and two-dimensional moiré superlattice structure.

2. The semiconductor laser element having an interlayer coherent hole tunneling layer according to claim 1, characterized in that, The thickness of the first interlayer coherent hole tunneling layer (1071) and the second interlayer coherent hole tunneling layer (1072) is 5-500 nm.

3. The semiconductor laser element having an interlayer coherent hole tunneling layer according to claim 1, characterized in that, The lower confinement layer (101) is any one or a combination of two or more of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50-5000 nm and a Si doping concentration of 1E18-1E20 cm⁻¹. -3 .

4. The semiconductor laser element having an interlayer coherent hole tunneling layer according to claim 1, characterized in that, The lower waveguide layer (102) and the upper waveguide layer (104) are any one or a combination of two or more of GaN, InGaN, and AlInGaN, with a thickness of 50-1000 nm and a Si doping concentration of 1E16-5E19 cm⁻¹. -3 .

5. The semiconductor laser element having an interlayer coherent hole tunneling layer according to claim 1, characterized in that, The electron blocking layer (105) and the upper confinement layer (106) are any one or a combination of two or more of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20-1000 nm and a Mg doping concentration of 1E18-1E20 cm⁻¹. -3 .

6. The semiconductor laser element having an interlayer coherent hole tunneling layer according to claim 1, characterized in that, The active layer (103) is a periodic structure composed of a well layer and a barrier layer. The well layer is an InGaN well layer, and the barrier layer is any one or a combination of two or more of GaN, AlInGaN, AlGaN, and AlInN. The number of periods of the active layer (103) is m: 4 ≥ m ≥ 1.

7. The semiconductor laser element having an interlayer coherent hole tunneling layer according to claim 1, characterized in that, The substrate (100) is any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

8. The semiconductor laser element having an interlayer coherent hole tunneling layer according to claim 1, characterized in that, The first interlayer coherent hole tunneling layer (1071) and the second interlayer coherent hole tunneling layer (1072) are specific structures formed by the following binary or ternary combinations: BaSrCuO / KAg3Se2, BaSrCuO / NiFeSe, BaSrCuO / CrGeTe3, BaSrCuO / Na4Mn4Ti5O 18 , BaSrCuO / CrTe4, KAg3Se2 / NiFeSe, KAg3Se2 / CrGeTe3, KAg3Se2 / Na4Mn4Ti5O 18 , KAg3Se2 / CrTe4, NiFeSe / CrGeTe3, NiFeSe / Na4Mn4Ti5O 18 , NiFeSe / CrTe4, CrGeTe3 / Na4Mn4Ti5O 18 CrGeTe3 / CrTe4, Na4Mn4Ti5O 18 / CrTe4, BaSrCuO / KAg3Se2 / NiFeSe, BaSrCuO / KAg3Se2 / CrGeTe3, BaSrCuO / KAg3Se2 / Na4Mn4Ti5O 18 , BaSrCuO / KAg3Se2 / CrTe4, BaSrCuO / NiFeSe / CrGeTe3, BaSrCuO / NiFeSe / Na4Mn4Ti5O 18 ,BaSrCuO / NiFeSe / CrTe4,BaSrCuO / CrGeTe3 / Na4Mn4Ti5O 18 , BaSrCuO / CrGeTe3 / CrTe4, BaSrCuO / Na4Mn4Ti5O 18 / CrTe4, KAg3Se2 / NiFeSe / CrGeTe3, KAg3Se2 / NiFeSe / Na4Mn4Ti5O 18 , KAg3Se2 / NiFeSe / CrTe4, KAg3Se2 / CrGeTe3 / Na4Mn4Ti5O 18 , KAg3Se2 / CrGeTe3 / CrTe4, KAg3Se2 / Na4Mn4Ti5O 18 / CrTe4,NiFeSe / CrGeTe3 / Na4Mn4Ti5O 18 , NiFeSe / CrGeTe3 / CrTe4, NiFeSe / Na4Mn4Ti5O 18 / CrTe4,CrGeTe3 / Na4Mn4Ti5O 18 / CrTe4.

9. The semiconductor laser element having an interlayer coherent hole tunneling layer according to claim 1, characterized in that, The first interlayer coherent hole tunneling layer (1071) and the second interlayer coherent hole tunneling layer (1072) are specific structures formed by the following quaternary combinations: BaSrCuO / KAg3Se2 / NiFeSe / CrGeTe3, BaSrCuO / KAg3Se2 / NiFeSe / Na4Mn4Ti5O 18 , BaSrCuO / KAg3Se2 / NiFeSe / CrTe4, BaSrCuO / NiFeSe / CrGeTe3 / Na4Mn4Ti5O 18 , BaSrCuO / NiFeSe / CrGeTe3 / CrTe4, BaSrCuO / CrGeTe3 / Na4Mn4Ti5O 18 / CrTe4, KAg3Se2 / NiFeSe / CrGeTe3 / Na4Mn4Ti5O 18 , KAg3Se2 / NiFeSe / CrGeTe3 / CrTe4, KAg3Se2 / CrGeTe3 / Na4Mn4Ti5O 18 / CrTe4,NiFeSe / CrGeTe3 / Na4Mn4Ti5O 18 / CrTe4.

10. The semiconductor laser element having an interlayer coherent hole tunneling layer according to claim 1, characterized in that, The first interlayer coherent hole tunneling layer (1071) and the second interlayer coherent hole tunneling layer (1072) are specific structures formed by the following pentagonal or hexaagonal combinations: BaSrCuO / KAg3Se2 / NiFeSe / CrGeTe3 / Na4Mn4Ti5O 18 , BaSrCuO / KAg3Se2 / NiFeSe / CrGeTe3 / CrTe4, BaSrCuO / KAg3Se2 / NiFeSe / Na4Mn4Ti5O 18 / CrTe4,BaSrCuO / KAg3Se2 / CrGeTe3 / Na4Mn4Ti5O 18 / CrTe4,BaSrCuO / NiFeSe / CrGeTe3 / Na4Mn4Ti5O 18 / CrTe4, KAg3Se2 / NiFeSe / CrGeTe3 / Na4Mn4Ti5O 18 / CrTe4, BaSrCuO / KAg3Se2 / NiFeSe / CrGeTe3 / Na4Mn4Ti5O 18 / CrTe4.

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